CN114497104B - Display module and display device - Google Patents

Abstract

The embodiment of the invention discloses a display module and a display device, relates to the technical field of display, and is used for improving transfer efficiency. The display module is provided with a plurality of sub-pixel areas. The display module includes: a back plate; and a plurality of light emitting diode chips arranged on one side of the back plate. Each light-emitting diode chip comprises a plurality of epitaxial structures, and a gap is reserved between any two adjacent epitaxial structures in the plurality of epitaxial structures; the light emitting diode chip is positioned in at least two sub-pixel areas; at least two epitaxial structures are disposed within one sub-pixel region. The display module and the display device provided by the embodiment of the invention are used for displaying images.

Description

Display module and display device

Technical Field

The present invention relates to the field of display technology, and in particular to a display module and a display device.

Background Art

Light emitting diodes (LEDs) have many advantages such as high efficiency, high brightness, high reliability, energy saving and fast response speed. In addition, LED display devices have obvious advantages over liquid crystal display devices (LCDs) and organic light emitting diode (OLEDs) display devices in terms of image quality, refresh rate, power consumption and brightness, making LEDs widely used in the display field.

At present, in LED display devices, a backplane and a plurality of LEDs bound to the backplane are usually provided. The plurality of LEDs are generally transferred to the backplane through mass transfer technology. However, due to the limitation of mass transfer technology itself, the transfer efficiency of LED is low.

Summary of the invention

An object of the embodiments of the present invention is to provide a display module and a display device for improving transfer efficiency.

To achieve the above objectives, the embodiments of the present invention provide the following technical solutions:

An embodiment of the present invention provides a display module. The display module has multiple sub-pixel regions. The display module includes: a backplane; and multiple light-emitting diode chips arranged on one side of the backplane. Each light-emitting diode chip includes multiple epitaxial structures, and there is a gap between any two adjacent epitaxial structures in the multiple epitaxial structures. The light-emitting diode chip is located in at least two sub-pixel regions; at least two epitaxial structures are arranged in one sub-pixel region.

The display module provided by some embodiments of the present invention, by arranging an LED chip including a plurality of epitaxial structures, and making each LED chip located in at least two sub-pixel regions, and arranging at least two epitaxial structures in each sub-pixel region, can realize image display by utilizing at least two epitaxial structures located in each sub-pixel region while ensuring that one LED chip corresponds to at least two sub-pixel regions.

In the process of transferring LED chips to the backplane using mass transfer technology, transferring one LED chip can correspond to multiple sub-pixel areas. Compared with the related technology in which each LED corresponds to one sub-pixel area, the transfer efficiency can be effectively improved.

In some embodiments, each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern, and a second semiconductor pattern stacked in sequence; the first semiconductor patterns of at least two of the multiple epitaxial structures are interconnected to form a first semiconductor layer. The light-emitting diode chip also includes at least one first electrode and a plurality of second electrodes; the first electrode is a first electrode electrically connected to the first semiconductor layer, and each second electrode is electrically connected to the second semiconductor pattern of the epitaxial structure. The backplane includes a substrate, and a plurality of connecting pads arranged on a side of the substrate close to the light-emitting diode chip and electrically connected to the light-emitting diode chip; the plurality of connecting pads include a plurality of first pads and a plurality of second pads. The first electrode is electrically connected to a plurality of first pads, and at least two of the second electrodes are electrically connected to a second pad.

In some embodiments, the plurality of second pads electrically connected to the plurality of second electrodes of the light-emitting diode chip are arranged in an array; or the plurality of second pads are arranged in a row along the first direction and are arranged in sequence at intervals. The plurality of first pads electrically connected to the first electrode of the light-emitting diode are arranged on at least one side of the area determined by the plurality of second pads.

In some embodiments, an orthographic projection shape of the plurality of first pads on the substrate includes at least one of a circle, an ellipse, and a polygon.

In some embodiments, a size of an orthographic projection of each first pad on the substrate ranges from 1 μm to 10 μm.

In some embodiments, the second semiconductor pattern is located on a side of the first semiconductor pattern close to the back plate. The first electrode is located on a side of the first semiconductor layer close to the back plate. The second electrode is located on a side of the second semiconductor pattern close to the back plate.

In some embodiments, the display module further comprises: a non-conductive adhesive layer disposed between the back plate and the plurality of light-emitting diode chips; the non-conductive adhesive layer is configured to fix the back plate and the plurality of light-emitting diode chips. The first electrode passes through the non-conductive adhesive layer to directly contact the corresponding plurality of first pads, and the second electrode passes through the non-conductive adhesive layer to directly contact the corresponding second pads.

In some embodiments, the display module further comprises: a color conversion layer disposed on a side of the plurality of light-emitting diode chips away from the backplane. The color conversion layer comprises: a defining layer disposed on a side of the plurality of light-emitting diode chips away from the backplane; the defining layer has a plurality of openings, each opening being located in a sub-pixel region; and a plurality of color conversion units; each color conversion unit is disposed in an opening, and the color conversion unit comprises at least one of a quantum dot material or a phosphor material.

In some embodiments, the plurality of color conversion units include a plurality of red color conversion units and a plurality of green color conversion units; the plurality of openings include a plurality of first openings and a plurality of second openings. Each red color conversion unit is disposed in a first opening, and each green color conversion unit is disposed in a second opening. The plurality of color conversion units also include a plurality of blue color conversion units, the plurality of openings also include a plurality of third openings; each blue color conversion unit is disposed in a third opening; or the color conversion layer also includes a plurality of blue filter portions, the plurality of openings also include a plurality of fourth openings; each blue filter portion is disposed in a fourth opening; the plurality of blue filter portions include an organic resin material.

In another aspect, an embodiment of the present invention provides a display device, which includes: a display module as described in any one of the above embodiments.

The display module included in the above-mentioned display device has the same structure and beneficial technical effects as the display modules provided in some of the above-mentioned embodiments, which will not be described in detail here.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the products involved in the embodiments of the present disclosure, the actual process of the method, etc.

FIG1 is a structural diagram of a display module according to some embodiments of the present invention;

FIG2 is a structural diagram of a backplane according to some embodiments of the present invention;

FIG3 is a structural diagram of another backplane according to some embodiments of the present invention;

FIG4 is a structural diagram of a light emitting diode chip according to some embodiments of the present invention;

FIG5 is a structural diagram of another light emitting diode chip according to some embodiments of the present invention;

FIG6 is a structural diagram of another display module according to some embodiments of the present invention;

FIG7 is a structural diagram of another display module according to some embodiments of the present invention;

FIG8 is a structural diagram of another display module according to some embodiments of the present invention;

FIG9 is a structural diagram of another display module according to some embodiments of the present invention;

FIG. 10 is a structural diagram of a display device according to some embodiments of the present invention.

DETAILED DESCRIPTION

The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

When describing some embodiments, the term "connected" and its derivative expressions may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components are in direct physical or electrical contact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

“At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

“A and/or B” includes the following three combinations: A only, B only, and a combination of A and B.

Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values may, in practice, be based on additional conditions or values beyond those stated.

As used herein, "about" or "approximately" includes the stated value and the average value that is within an acceptable range of deviation from the particular value, where the acceptable range of deviation is determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

Exemplary embodiments are described herein with reference to cross-sectional views and/or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and/or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

Some embodiments of the present invention provide a display module 100. As shown in FIG1 , the display module 100 has a plurality of sub-pixel regions P.

In some examples, each sub-pixel region P is capable of displaying light of one color.

Exemplarily, the colors of light that can be displayed by the plurality of sub-pixel regions P may include three primary colors, which may be, for example, red, green, and blue, or, for example, magenta, yellow, and cyan.

Here, taking the example that the colors of light that can be displayed by the multiple sub-pixel regions P include red, green and blue, the multiple sub-pixel regions P may include multiple red sub-pixel regions, multiple green sub-pixel regions and multiple blue sub-pixel regions.

There are many ways to arrange the above-mentioned multiple sub-pixel regions P, which can be selected and set according to actual needs. Of course, the arrangement of the multiple sub-pixel regions P is not limited to the three examples below.

Exemplarily, along the first direction X, in the multiple sub-pixel regions P of each row, the red sub-pixel regions, the green sub-pixel regions, and the blue sub-pixel regions are periodically arranged. Along the second direction Y, in the multiple sub-pixel regions P of each column, the red sub-pixel regions, the green sub-pixel regions, and the blue sub-pixel regions are periodically arranged.

Exemplarily, as shown in FIG1 , along the first direction X, each row of multiple sub-pixel regions P includes multiple red sub-pixel regions arranged in sequence, or multiple green sub-pixel regions arranged in sequence, or multiple blue sub-pixel regions arranged in sequence. Along the second direction Y, a red sub-pixel region row formed by a plurality of red sub-pixel regions, a green sub-pixel region row formed by a plurality of green sub-pixel regions, and a blue sub-pixel region row formed by a plurality of blue sub-pixel regions are periodically arranged.

Exemplarily, one red sub-pixel region and two green sub-pixel regions are referred to as first pixel regions, and one blue sub-pixel region and two green sub-pixel regions are referred to as second pixel regions. The first pixel regions and the second pixel regions are arranged alternately along the first direction X. The first pixel regions and the second pixel regions are arranged alternately along the second direction, wherein the green sub-pixel regions in each first pixel region and the green sub-pixel regions in each second pixel region are arranged in a row, and the red sub-pixel regions in each first pixel region and the blue sub-pixel regions in each second pixel region are arranged in a row.

The first direction X and the second direction Y intersect each other. The angle between the two can be set according to actual needs. For example, the first direction X and the second direction Y can be perpendicular to each other.

In some examples, as shown in FIGS. 6 to 9 , the display module 100 may include a back panel 1 and a plurality of light emitting diode chips (ie, LED chips) 2 disposed on one side of the back panel 1 .

Exemplarily, the back plate 1 is configured to provide a driving voltage for the plurality of LED chips 2 to control the light emitting state of the plurality of LED chips 2 .

In some examples, as shown in Fig. 6 to Fig. 9, each LED chip 2 includes a plurality of epitaxial structures 21. There is a gap between any two adjacent epitaxial structures 21 in the plurality of epitaxial structures 21, that is, the plurality of epitaxial structures 21 are spaced apart from each other.

Exemplarily, as shown in FIGS. 6 to 9 , each epitaxial structure 21 includes a first semiconductor pattern 211 , a light emitting pattern 212 , and a second semiconductor pattern 213 which are sequentially stacked.

Optionally, the light emitting pattern 212 may be a multiple quantum well layer (Multiple Quantum Well, MQW for short). The material of the light emitting pattern 212 may be, for example, gallium nitride (GaN).

Optionally, the material of the first semiconductor pattern 211 may be a P-type semiconductor material, and correspondingly, the material of the second semiconductor pattern 213 may be an N-type semiconductor material. Alternatively, the material of the first semiconductor pattern 211 may be an N-type semiconductor material, and correspondingly, the material of the second semiconductor pattern 213 may be a P-type semiconductor material.

The intrinsic semiconductor material of the first semiconductor pattern 211 and the second semiconductor pattern 213 includes multiple materials, which can be selected and set according to actual needs. For example, the intrinsic semiconductor material in the first semiconductor pattern 211 and the second semiconductor pattern 213 is the same, which can be any one of GaN, gallium phosphide (GaP), aluminum gallium arsenide (AlGaAs) and aluminum gallium indium phosphide (AlGaInP).

It should be noted that when different voltages are applied to the first semiconductor pattern 211 and the second semiconductor pattern 213 respectively to form an electric field therebetween (that is, a PN junction with a potential barrier is formed between the first semiconductor pattern 211 and the second semiconductor pattern 213), minority carriers and majority carriers can recombine in the light-emitting pattern 212 and release excess energy in the form of light, thereby realizing the conversion between electrical energy and light energy.

Based on this, the multiple epitaxial structures 21 of each LED chip 2 can emit light under the driving voltage provided by the back plate 1. By arranging the multiple epitaxial structures 21 at intervals from each other, crosstalk between the lights emitted by two adjacent epitaxial structures 21 can be avoided.

In some examples, as shown in FIG. 6 , each LED chip 2 is located in at least two sub-pixel regions P, and at least two epitaxial structures 21 are disposed in one sub-pixel region P.

This means that the multiple epitaxial structures 21 included in each LED chip 2 can be located in at least two sub-pixel areas P (that is, each LED chip 2 can correspond to at least two sub-pixel areas P), and at least two epitaxial structures 21 can be arranged in each of the at least two sub-pixel areas P.

Here, the corresponding relationship between each LED chip 2 and the sub-pixel region P, and the corresponding relationship between each sub-pixel region P and the epitaxial structure 21 include multiple ones, which can be selected and set according to actual needs.

Exemplarily, the plurality of epitaxial structures 21 included in each LED chip 2 may be located in three, five, six or nine sub-pixel regions P. Ten, thirty, fifty or one hundred epitaxial structures 21 may be disposed in each sub-pixel region P.

In the process of driving the LED chip 2 to emit light using the driving voltage provided by the backplane 1, the light-emitting state of at least two epitaxial structures 21 located in each sub-pixel region P can be controlled independently. For example, at least two epitaxial structures 21 in one of the at least two sub-pixel regions P can be controlled to emit light, and at least two epitaxial structures 21 in another of the at least two sub-pixel regions P can be controlled not to emit light. In this way, by controlling the light-emitting state of at least two epitaxial structures 21 in different sub-pixel regions P, that is, controlling the display state of different sub-pixel regions P, the display module 100 can display images.

It should be noted that in the LED display device in the related art, one LED needs to be arranged in each sub-pixel region. In the process of transferring LEDs using the mass transfer technology, the transfer efficiency of the LEDs is low.

The display module 100 provided by some embodiments of the present invention, by providing an LED chip 2 including a plurality of epitaxial structures 21, and making each LED chip 2 located in at least two sub-pixel regions P, and providing at least two epitaxial structures 21 in each sub-pixel region P, can realize image display by utilizing at least two epitaxial structures 21 located in each sub-pixel region P while ensuring that one LED chip 2 corresponds to at least two sub-pixel regions P.

In the process of transferring the LED chip 2 to the back panel 1 using the mass transfer technology, transferring one LED chip 2 can correspond to multiple sub-pixel areas P. Compared with the related technology in which each LED corresponds to one sub-pixel area, the transfer efficiency can be effectively improved.

In some embodiments, as shown in FIGS. 6 to 9 , among the multiple epitaxial structures 21 in each LED chip 2 , the first semiconductor patterns 211 of at least two epitaxial structures 21 are interconnected to form a first semiconductor layer 211 a .

Exemplarily, among the plurality of epitaxial structures 21, the first semiconductor patterns 211 of two, three or four adjacent epitaxial structures 21 are interconnected to form a first semiconductor layer 211a. In this case, the LED chip 2 may include a plurality of first semiconductor layers 211a.

4 and 5 , the plurality of first semiconductor patterns 211 belonging to different epitaxial structures 21 in the plurality of epitaxial structures 21 are interconnected to form a first semiconductor layer 211a. In this case, the LED chip 2 may have one first semiconductor layer 211a.

In some examples, the portion of the first semiconductor layer 211a used to connect at least two first semiconductor patterns 211 can be made of the same material as the first semiconductor pattern 211. As shown in FIGS. 6 to 9, the portion can be located not only in the gap between the at least two first semiconductor patterns 211, but also beside the area determined by the at least two first semiconductor patterns 211 as a whole.

Exemplarily, the first semiconductor patterns 211 of the at least two epitaxial structures 21 and the portion for connecting the at least two first semiconductor patterns 211 can be formed by using the same film in the same patterning process, which is conducive to simplifying the preparation process of the LED chip 2 .

It is worth mentioning that among the multiple epitaxial structures 21 in each LED chip 2, the light-emitting patterns 212 of at least two epitaxial structures 21 can be interconnected to form a light-emitting layer. For example, multiple light-emitting patterns 212 belonging to different epitaxial structures 21 can be interconnected to form a light-emitting layer. In this case, the LED chip 2 can have one light-emitting layer.

In this way, during the process of preparing the LED chip 2, etching of the light-emitting layer can be avoided, thereby avoiding affecting the material crystal quality of the light-emitting layer, thereby ensuring that the LED chip 2 can have good light-emitting performance.

In the following, some embodiments of the present invention take the example that the material of the first semiconductor pattern 211 may be an N-type semiconductor material and the material of the second semiconductor pattern 213 may be a P-type semiconductor material to schematically illustrate the structure of the display module 100 .

In some embodiments, as shown in FIGS. 4 to 9 , each LED chip 2 may further include: at least one first electrode 22 and a plurality of second electrodes 23. As shown in FIGS. 6 to 9 , each first electrode 22 may be electrically connected to a first semiconductor layer 211a, and each second electrode 23 may be electrically connected to a second semiconductor pattern 213 in an epitaxial structure 21. Each first electrode 22 and the first semiconductor layer 211a electrically connected thereto may be in direct contact with each other, and each second electrode 23 and the second semiconductor pattern 213 electrically connected thereto may be in direct contact with each other.

In this case, the first electrode 22 can be called an N electrode, and the second electrode 23 can be called a P electrode. The backplane 1 can inject electrons into the first semiconductor layer 211a through the first electrode 22, and can inject holes into the second semiconductor pattern 213 through the second electrode 23, so that the electrons and holes can be recombined and emit light in the light-emitting pattern 212.

In some examples, as shown in FIGS. 4 to 9 , each first electrode 22 being electrically connected to a first semiconductor layer 211 a means that the first electrode 22 is electrically connected to a portion of the first semiconductor pattern 211 in the first semiconductor layer 211 a for connecting at least two epitaxial structures 21. No direct contact is formed between the first electrode 22 and the epitaxial structure 21.

In some examples, the number of the first electrodes 22 may be determined according to the number of the first semiconductor layers 211 a. That is, the number of the first electrodes 22 may be the same as the number of the first semiconductor layers 211 a.

Based on this, at least two epitaxial structures 21 corresponding to the first semiconductor layer 211a can share a first electrode 22. In this way, when electrons are injected into the first semiconductor layer 211a through the first electrode 22, the amounts of electrons injected into the at least two epitaxial structures 21 can be the same or approximately the same, which is beneficial to reduce the difference in current in the at least two epitaxial structures 21 and improve the current uniformity of the at least two epitaxial structures 21.

For example, each LED chip 2 has a first semiconductor layer 211a, and the number of first electrodes 22 electrically connected to the first semiconductor layer 211a can be one. This can make the amount of electrons injected into all epitaxial structures 21 the same or approximately the same, which is conducive to further improving the current uniformity of different epitaxial structures 21.

In some examples, as shown in FIGS. 4 to 9 , the orthographic projection of each second electrode 23 on the first semiconductor layer 211 a and the orthographic projection of the second semiconductor pattern 213 electrically connected to the second electrode 23 on the first semiconductor layer 211 a coincide with each other.

Here, considering the preparation process of the epitaxial structure 21, that is, the multiple epitaxial structures 21 of each LED chip 2 are formed after patterning using the multiple second electrodes 23 as masks, the orthographic projection pattern of each second electrode 23 on the first semiconductor layer 211a and the orthographic projection pattern of the second semiconductor pattern 213 electrically connected to the second electrode 23 on the first semiconductor layer 211a can be the same and overlap. In this way, it can be ensured that each second electrode 23 and the second semiconductor pattern 213 electrically connected to the second electrode 23 have a large contact area, ensuring good electrical connection between the two.

In some embodiments, as shown in FIG. 2 , FIG. 3 and FIG. 6 to FIG. 9 , the back plate 1 includes a substrate 11 and a plurality of connection pads 12 disposed on a side of the substrate 11 close to the LED chip 2 and electrically connected to each LED chip 2 .

In some examples, the back plate 1 further includes a circuit structure disposed between the substrate 11 and the plurality of connection pads 12 and electrically connected to each connection pad 12. The circuit structure is capable of generating a driving voltage, and transmitting the driving voltage to the LED chip 2 electrically connected to the plurality of connection pads 12 through the plurality of connection pads 12, thereby controlling the light emitting state of the LED chip 2.

The present invention is not limited to the composition of the circuit structure, and it only needs to be able to generate a driving voltage for controlling the light-emitting state of the LED chip 2 .

In some examples, as shown in FIG. 2 , FIG. 3 , and FIG. 6 to FIG. 9 , the plurality of pads 12 include a plurality of first pads 121 and a plurality of second pads 122 . The first electrode 22 of each LED chip 2 may be electrically connected to the plurality of first pads 121 , and at least two second electrodes 23 may be electrically connected to one second pad 122 .

For example, each first electrode 22 may correspond to ten first pads 121 and form an electrical connection therewith; and every three second electrodes 23 (ie, three epitaxial structures 21 ) may correspond to one second pad 122 and form an electrical connection therewith.

At this time, when the back plate 1 provides the driving voltage to each LED chip 2, electrons can be transmitted through the multiple first pads 121 to the first electrodes 22 electrically connected to the multiple first pads 121, and holes can be transmitted through the second pads 122 to at least two second electrodes 23 electrically connected to the second pads 122. By controlling the state of hole transmission, the light-emitting state of the epitaxial structure 21 electrically connected to each second pad 122 is controlled, thereby achieving independent control of the epitaxial structure 21 electrically connected to each second pad 122.

Here, each second pad 122 may be located in, for example, a sub-pixel region P. In this way, independent control of the display state of each sub-pixel region P may be achieved.

Exemplarily, in each first electrode 22 and a plurality of first pads 121 electrically connected to the first electrode 22, an orthographic projection area of the first pad 121 on the substrate 11 is smaller than an orthographic projection area of the first electrode 22 on the substrate 11, and the orthographic projection of the first pad 121 on the substrate 11 is located within the orthographic projection range of the first electrode 22 on the substrate 11, or, there is a partial overlap between the orthographic projection of the first pad 121 on the substrate 11 and the orthographic projection of the first electrode 22 on the substrate 11.

Exemplarily, in each second pad 122 and at least two second electrodes 23 electrically connected to the second pad 122, the orthographic projection area of the second electrode 23 on the substrate 11 is smaller than the orthographic projection area of the second pad 122 on the substrate 11, the orthographic projection of the second electrode 23 on the substrate 11 is located within the orthographic projection range of the second pad 122 on the substrate 11, or, there is a partial overlap between the orthographic projection of the second electrode 23 on the substrate 11 and the orthographic projection of the second pad 122 on the substrate 11.

It should be noted that in the related art, each LED has an N electrode and a P electrode, and the backplane in the LED display device has an N pad bound to the N electrode of each LED and a P pad bound to the P electrode of each LED. In the process of binding the LED to the backplane, since one LED corresponds to one sub-pixel area, and each N electrode corresponds to one N pad, and each P electrode corresponds to one P pad, the binding bonding accuracy between the LED and the backplane is required to be high, which can easily reduce the yield of the binding bonding between the LED and the backplane.

Each LED chip 2 in the present invention includes a plurality of epitaxial structures 21, each LED chip 2 may correspond to a plurality of sub-pixel regions P, and each first electrode 22 may be electrically connected to a plurality of first pads 121, and at least two second electrodes 23 may be electrically connected to one second pad 122, so that in the process of bonding the LED chip 2 to the back plate 1, even if a large alignment error occurs between the LED chip 2 and the back plate 1, each first electrode 22 may be electrically connected to a portion of the first pads 121, and at least one second electrode 23 may be electrically connected to one second pad 122. In other words, the present invention may effectively reduce the bonding accuracy between the LED chip 2 and the back plate 1, and effectively improve the bonding yield between the LED chip 2 and the back plate 1.

It is worth mentioning that there are various arrangements of the plurality of first solder pads 121 and the plurality of second solder pads 122 in the back plate 1 that are electrically connected to each LED chip 2, and these arrangements can be selected according to actual needs.

In some examples, the arrangement of the first solder pads 121 and the second solder pads 122 may be related to the arrangement of the first electrodes 22 and the second electrodes 23 in the LED chip 2 .

Exemplarily, the multiple epitaxial structures 21 in the LED chip 2 may be arranged in an array. At this time, as shown in FIG. 4 and FIG. 5 , the multiple second electrodes 23 electrically connected to the second semiconductor patterns 213 of each epitaxial structure 21 may be arranged in an array.

Based on this, for example, as shown in Fig. 3, the plurality of second pads 122 electrically connected to the plurality of second electrodes 23 may be arranged in an array, that is, along the first direction X, the plurality of second pads 122 are arranged in a plurality of rows; along the second direction, the plurality of second pads 122 are arranged in a plurality of columns.

At this time, the multiple epitaxial structures 21 of each LED chip 2 can be divided into multiple epitaxial structures 21, and each epitaxial structure 21 corresponds to a second pad 122. The multiple epitaxial structures 21 can be arranged in multiple rows along the first direction X and in multiple columns along the second direction. When a pad 122 is located in a sub-pixel area P, each epitaxial structure 21 is located in a sub-pixel area P, and the LED chip 2 corresponds to multiple sub-pixel areas P arranged in an array. The multiple sub-pixel areas P may include, for example, multiple groups of sub-pixel areas (a group of sub-pixel areas includes a red sub-pixel area, a green sub-pixel area, and a blue sub-pixel area).

2 , the plurality of second pads 122 electrically connected to the plurality of second electrodes 23 may be arranged in a row along the first direction X and arranged in sequence at intervals. For example, the plurality of second pads 122 may be arranged at equal intervals.

At this time, the multiple epitaxial structures 21 of each LED chip 2 can be divided into multiple epitaxial structures 21, and each epitaxial structure 21 corresponds to a second solder pad 122. The multiple epitaxial structures 21 can be arranged in a row along the first direction X and arranged in sequence. When a solder pad 122 is located in a sub-pixel area P, each epitaxial structure 21 is located in a sub-pixel area P, and the LED chip 2 corresponds to multiple sub-pixel areas P arranged in a row along the first direction X. The multiple sub-pixel areas P may include, for example, at least one group of sub-pixel areas.

For example, as shown in FIG. 4 and FIG. 5 , the first electrode 22 in the LED chip 2 may be located on at least one side (eg, one side, two sides, or a peripheral side, etc.) of a region defined by the plurality of epitaxial structures 21 .

Based on this, the plurality of first pads 121 electrically connected to the first electrodes 22 may be disposed on at least one side of a region defined by the plurality of second pads 122 electrically connected to the plurality of second electrodes 23 of the LED chip 2 .

For example, as shown in Fig. 2, the first electrode 22 is located on one side of the region defined by the plurality of epitaxial structures 21. At this time, the plurality of first pads 121 may be located on one side of the region defined by the plurality of second pads 122. Further, the plurality of first pads 121 may be arranged in an array.

3 , the first electrode 22 is located around the region defined by the plurality of epitaxial structures 21 , that is, the first electrode 22 is surrounded by the plurality of epitaxial structures 21 . At this time, the plurality of first pads 121 may be located around the region defined by the plurality of second pads 122 .

This helps to ensure effective electrical connection between the first electrode 22 and the first pad 121 .

In some embodiments, the orthographic projection shapes of each first pad 121 on the substrate 11 include various shapes, which can be selected and set according to actual needs.

In some examples, the orthographic projection shape of each first pad 121 on the substrate 11 may include at least one of a circle (as shown in FIGS. 2 and 3 ), an ellipse, and a polygon (eg, a rectangle).

In some examples, the size of the orthographic projection of each first pad 121 on the substrate 11 may range from 1 μm to 10 μm. Here, the size of the orthographic projection refers to, for example, the maximum value, minimum value or average value of the distance between two intersection points of a straight line passing through the center of the orthographic projection and the boundary of the orthographic projection.

Exemplarily, taking the maximum value as an example, when the orthographic projection shape of the first pad 121 on the substrate 11 is a circle, the size refers to the diameter of the circle. When the orthographic projection shape of the first pad 121 on the substrate 11 is a rectangle, the size refers to the diagonal length of the rectangle.

Optionally, the size of the orthographic projection of each first pad 121 on the substrate 11 may be in the range of 2 μm to 5 μm.

This is beneficial to matching the binding bonding between the first pad 121 and the first electrode 22 .

In some examples, the size of the orthographic projection of each second electrode 23 on the substrate 11 may range from 0.1 μm to 20 μm. The size of the gap between the orthographic projections of each second electrode 23 on the substrate 11 (that is, the gap between any two adjacent epitaxial structures 21) may range from 0.1 μm to 20 μm.

This is beneficial to matching the binding bonding between the second electrode 23 and the second pad 122 .

In some embodiments, as shown in FIGS. 7 to 9 , the display module 100 may further include: a non-conductive adhesive layer 3 disposed between the back plate 1 and the plurality of LED chips 2. The non-conductive adhesive layer 3 is configured to fix the back plate 1 and the plurality of LED chips 2. The first electrode 22 passes through the non-conductive adhesive layer 3 and directly contacts the corresponding plurality of first pads 121, and the second electrode 23 passes through the non-conductive adhesive layer 3 and directly contacts the corresponding second pads 122.

In some examples, the material of the non-conductive adhesive layer 3 may include, for example, UV adhesive or thermal curing adhesive.

In some examples, in the process of setting the non-conductive adhesive layer 3 between the back panel 1 and the above-mentioned multiple LED chips 2, for example, the non-conductive adhesive can be coated on the back panel 1 or the LED chip 2 (for example, coated on the entire surface or dotted), and then the multiple LED chips 2 are transferred to the back panel 1, and the non-conductive adhesive is cured, so that the back panel 1 and the multiple LED chips 2 are fixed together.

Wherein, when the material of the non-conductive adhesive layer 3 includes UV adhesive, the UV adhesive can be cured by UV irradiation. When the material of the non-conductive adhesive layer 3 includes thermal curing adhesive, the thermal curing adhesive can be cured under a certain pressure and temperature (pressure is, for example, 0.5 MPa to 40 MPa, and temperature is, for example, 100° C. to 300° C.).

It should be noted that since the non-conductive adhesive layer 3 has high insulation performance, when the back panel 1 and the multiple LED chips 2 are fixed by using the non-conductive adhesive layer 3, since the size of the first soldering pad 121 and the size of the second electrode 23 are relatively small, in the process of preparing the first soldering pad 121 and the second electrode 23, the area of the end of the first soldering pad 121 away from the substrate 11 and the end of the second electrode 23 away from the second semiconductor pattern 213 can be made smaller, and then in the process of binding bonding, it is avoided that a large amount of non-conductive adhesive remains between the first electrode 22 and the corresponding first soldering pad 121, resulting in a short circuit between the two, and it is avoided that a large amount of non-conductive adhesive remains between the second electrode 23 and the corresponding second soldering pad 122, resulting in a short circuit between the two.

It is worth mentioning that the combination of the first pad 121 and the non-conductive adhesive layer 3 or the combination of the second electrode 23 and the non-conductive adhesive layer 3 can form a structure similar to anisotropic conductive film (ACF), wherein the first pad 121 or the second electrode 23 can be equivalent to the conductive particles in the ACF. Therefore, the present disclosure uses the non-conductive adhesive layer 3 to bind and bond the back plate 1 and the LED chip 2, the process is simple and easy to implement, and it is conducive to reducing the preparation cost of the display module 100.

In some embodiments, as shown in Figures 6 to 9, in each of the above-mentioned LED chips 2, the second semiconductor pattern 213 can be located on the side of the first semiconductor pattern 211 close to the back panel 1, the first electrode 22 can be located on the side of the first semiconductor layer 211a close to the back panel 1, and the second electrode 23 can be located on the side of the second semiconductor pattern 213 close to the back panel 1.

At this time, the structure of the LED chip 2 can be a flip-chip structure, and the light-emitting pattern 212 in the LED chip 2 can emit light to the side away from the back plate 1. After the LED chip 2 is transferred to the back plate 1, the LED chip 2 can be directly bonded to the connecting pad 12 without being connected through other circuits, which is conducive to simplifying the circuit structure of the display module 100.

In some examples, before the multiple LED chips 2 are transferred to the back plate 1, each LED chip 2 also has a buffer layer and a substrate (such as a sapphire substrate) arranged on the side of the first semiconductor pattern 211 away from the second semiconductor pattern 213. After the LED chip 2 is fixed to the back plate 1, for example, the substrate can be peeled off by laser lift-off (Laser Lift-off, LLO for short), and the buffer layer is retained, and then washed with hydrogen chloride solution, dilute sulfuric acid solution or dilute phosphoric acid solution to remove residual substances (such as gallium metal). By removing the substrate, it is beneficial to improve the light extraction efficiency of the LED chip 2.

In some embodiments, as shown in Figures 8 and 9, the display module 100 may further include: a color conversion layer 4 disposed on a side of the plurality of LED chips 2 away from the back plate 1. The plurality of LED chips 2 and the color conversion layer 4 may be bonded, for example, with an optically clear adhesive (OCA for short).

In some examples, as shown in FIGS. 8 and 9 , the color conversion layer 4 may include: a defining layer 41 and a plurality of color conversion units 42 .

In some examples, as shown in FIG8 and FIG9 , the defining layer 41 is disposed on a side of the plurality of LED chips 2 away from the back plate 1 , and the defining layer 41 has a plurality of openings K. Each opening K is located in a sub-pixel region P.

The orthographic projection of the opening K on the substrate 11 may have various shapes. For example, the orthographic projection of the opening K on the substrate 11 may be circular or rectangular.

In some examples, as shown in FIG. 8 and FIG. 9 , among the plurality of color conversion units 42 , each color conversion unit 42 may be disposed in one opening K, that is, each color conversion unit 42 may correspond to one sub-pixel region P.

Exemplarily, each color conversion unit 42 includes at least one of a quantum dot material or a phosphor material.

Among them, the phosphor material is a photoluminescent material that can emit light of different colors under the excitation of monochromatic light.

The quantum dot material includes a plurality of quantum dots and ligands respectively bound to the plurality of quantum dots. When the quantum dots are excited by light from the outside, the electrons therein will undergo transitions, causing the quantum dots to emit light. Therefore, the light incident on the color conversion unit 42 will excite the quantum dots in the color conversion unit 42, causing it to emit colored light. In addition, due to the quantum confinement effect of quantum dots, the wavelength of the light emitted by them will change with the change of the particle size of the quantum dots, that is, quantum dots of different particle sizes can be excited to emit light of different colors. In this way, when using quantum dots of the same material, the particle size of the quantum dots can be adjusted to make the multiple color conversion units 42 emit light of different colors.

In this way, after the light emitted from the multiple LED chips 2 is incident on the color conversion units 42 in different sub-pixel areas P, different color conversion units 42 can emit light of different colors, and the different colors of light can cooperate with each other to enable the display module 100 to achieve colored image display.

Exemplarily, the defining layer 41 may be made of dark resin. By providing the defining layer 41 , light leakage and light crosstalk may be avoided.

It should be noted that in the related art, due to the low precision and poor uniformity of height and position of LED in the transfer process, light leakage is prone to occur when the color conversion layer is used to realize the color display of the LED display device. In the present invention, a second solder pad 122 is included in a sub-pixel area P, and the color conversion unit 42 in the color conversion layer 4 corresponds to a sub-pixel area P, and part of the epitaxial structure 21 located in the same LED chip 2 is arranged corresponding to the second solder pad 122 of the back plate 1. In this way, the alignment accuracy between the color conversion layer 4 and the LED chip 2 can be improved to avoid light leakage.

It is worth mentioning that the color of the light emitted by each epitaxial structure 21 in the LED chip 2 is related to the intrinsic semiconductor material of the first semiconductor pattern 211 and the second semiconductor pattern 213. For example, if the intrinsic semiconductor materials of the first semiconductor pattern 211 and the second semiconductor pattern 213 are both GaN, the epitaxial structure 21 can emit green light or blue light; if the intrinsic semiconductor materials of the first semiconductor pattern 211 and the second semiconductor pattern 213 are both GaP, AlGaAs or AlGaInP, the epitaxial structure 21 can emit red light. Of course, the epitaxial structure 21 can also emit ultraviolet light.

In some examples, the LED chip 2 is an LED chip that can emit blue light or ultraviolet light, which is helpful to reduce costs and improve luminous efficiency.

In some examples, as shown in FIG8 , when the light emitted by the LED chip 2 is ultraviolet light, the plurality of color conversion units 42 may include a plurality of red color conversion units 421, a plurality of green color conversion units 422, and a plurality of blue color conversion units 423. The plurality of openings K include a plurality of first openings K1, a plurality of second openings K2, and a plurality of third openings K3. Each red color conversion unit 421 is disposed in a first opening K1, each green color conversion unit 422 is disposed in a second opening K2, and each blue color conversion unit 423 is disposed in a third opening K3.

In this way, the red color conversion unit 421 can emit red light when excited by the ultraviolet light emitted by the LED chip 2; the green color conversion unit 422 can emit green light when excited by the ultraviolet light emitted by the LED chip 2; and the blue color conversion unit 423 can emit blue light when excited by the ultraviolet light emitted by the LED chip 2.

In other examples, as shown in FIG9 , when the light emitted by the LED chip 2 is blue light, the plurality of color conversion units 42 may include a plurality of red color conversion units 421 and a plurality of green color conversion units 422. The plurality of openings K include a plurality of first openings K1 and a plurality of second openings K2. Each red color conversion unit 421 is disposed in a first opening K1, and each green color conversion unit 422 is disposed in a second opening K2.

In this way, the red color conversion unit 421 can emit red light when excited by the blue light emitted by the LED chip 2; and the green color conversion unit 422 can emit green light when excited by the blue light emitted by the LED chip 2.

In this case, the color conversion layer 4 further includes a plurality of blue filter portions 424, and the plurality of openings K include a plurality of fourth openings K4. Each blue filter portion 424 is disposed in one fourth opening K4. The plurality of blue filter portions 424 include organic resin material.

In this way, the blue light emitted by the LED chip 2 can be filtered by the blue light filter 424 .

Some embodiments of the present invention further provide a display device 1000. As shown in FIG10 , the display device includes a display module 100 as described in any of the above embodiments.

The display module 100 included in the display device 1000 has the same structure and beneficial technical effects as the display module 100 provided in some of the above embodiments, which will not be described in detail herein.

In some embodiments, the display device 1000 may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or the like.

The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims (8)

1. A display module, characterized in that the display module has a plurality of sub-pixel regions; each sub-pixel region is used to display light of one color; the display module comprises: back panel; and, A plurality of light emitting diode chips disposed on one side of the back plate; Wherein, each light-emitting diode chip includes a plurality of epitaxial structures, and there is a gap between any two adjacent epitaxial structures among the plurality of epitaxial structures; The light emitting diode chip is located in at least two sub-pixel regions; at least two epitaxial structures are arranged in one sub-pixel region; Each epitaxial structure includes a first semiconductor pattern, a light emitting pattern, and a second semiconductor pattern which are sequentially stacked; the first semiconductor patterns of at least two epitaxial structures among the plurality of epitaxial structures are interconnected to form a first semiconductor layer; The light-emitting diode chip further comprises at least one first electrode and a plurality of second electrodes; the first electrode is electrically connected to the first semiconductor layer, and each second electrode is electrically connected to the second semiconductor pattern of the epitaxial structure; The back plate comprises a substrate, and a plurality of connection pads arranged on a side of the substrate close to the light-emitting diode chip and electrically connected to the light-emitting diode chip; the plurality of connection pads comprises a plurality of first pads and a plurality of second pads; Wherein, the first electrode is electrically connected to a plurality of first pads, at least two of the second electrodes are electrically connected to one second pad; one second pad and at least two of the second electrodes electrically connected thereto are located in one sub-pixel region; The display module further comprises: a color conversion layer disposed on a side of the plurality of light emitting diode chips away from the back plate; The color conversion layer comprises: A defining layer is disposed on a side of the plurality of light emitting diode chips away from the back plate; the defining layer has a plurality of openings, each opening being located in a sub-pixel region; and A plurality of color conversion units; each color conversion unit is arranged in an opening, and the color conversion unit includes at least one of quantum dot material or phosphor material. 2. The display module according to claim 1, characterized in that the plurality of second pads electrically connected to the plurality of second electrodes of the light-emitting diode chip are arranged in an array; or the plurality of second pads are arranged in a row along the first direction and are arranged in sequence at intervals; The plurality of first pads electrically connected to the first electrode of the light emitting diode are disposed on at least one side of a region defined by the plurality of second pads. 3 . The display module according to claim 1 , wherein the orthographic projection shapes of the plurality of first pads on the substrate include at least one of a circle, an ellipse and a polygon. 4 . The display module according to claim 1 , wherein a size of an orthographic projection of each first pad on the substrate is in a range of 1 μm to 10 μm. 5. The display module according to claim 1, characterized in that: The second semiconductor pattern is located on a side of the first semiconductor pattern close to the back plate; The first electrode is located on a side of the first semiconductor layer close to the back plate; The second electrode is located on a side of the second semiconductor pattern close to the back plate. 6. The display module according to claim 1, characterized in that the display module further comprises: a non-conductive adhesive layer disposed between the back plate and the plurality of light-emitting diode chips; the non-conductive adhesive layer is configured to fix the back plate and the plurality of light-emitting diode chips; The first electrode passes through the non-conductive adhesive layer and directly contacts with the corresponding plurality of first pads, and the second electrode passes through the non-conductive adhesive layer and directly contacts with the corresponding second pads. 7. The display module according to claim 1, wherein the plurality of color conversion units include a plurality of red color conversion units and a plurality of green color conversion units; The plurality of openings include a plurality of first openings and a plurality of second openings; Each red color conversion unit is disposed in a first opening, and each green color conversion unit is disposed in a second opening; Wherein, the plurality of color conversion units further include a plurality of blue color conversion units, the plurality of openings further include a plurality of third openings; each blue color conversion unit is disposed in one of the third openings; or, The color conversion layer further includes a plurality of blue filter sections, the plurality of openings further include a plurality of fourth openings; each blue filter section is disposed in a fourth opening; and the plurality of blue filter sections include an organic resin material. 8. A display device, comprising: the display module according to any one of claims 1 to 7.