CN114488697A - Photoresist bubble elimination device and photolithography system - Google Patents
Photoresist bubble elimination device and photolithography system Download PDFInfo
- Publication number
- CN114488697A CN114488697A CN202210158300.7A CN202210158300A CN114488697A CN 114488697 A CN114488697 A CN 114488697A CN 202210158300 A CN202210158300 A CN 202210158300A CN 114488697 A CN114488697 A CN 114488697A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- pipeline
- cavity
- pressure gauge
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0073—Degasification of liquids by a method not covered by groups B01D19/0005 - B01D19/0042
- B01D19/0078—Degasification of liquids by a method not covered by groups B01D19/0005 - B01D19/0042 by vibration
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Degasification And Air Bubble Elimination (AREA)
Abstract
Description
技术领域technical field
本发明涉及半导体技术领域,特别涉及一种光刻胶气泡消除装置及光刻系统。The invention relates to the technical field of semiconductors, in particular to a photoresist bubble elimination device and a photolithography system.
背景技术Background technique
自从半导体发明以来,图形的转换是通过光刻技术实现的。光刻技术成为当今科学技术制备微电子器件、光电子器件的关键技术。遵循Moore定律,半导体器件的尺寸不断缩小,密度不断增加,目前的半导体光刻工艺已进入了5nm时代。光刻的本质是图形转移,首先将光刻胶涂布到晶圆表面形成感光材料,通过光刻机照射紫外光将光罩预先设计的电路图形投影到感光材料表面,经过光化学反应后,利用显影液进行显影,完成图形转移。随着集成电路尺寸不断缩小,光刻工艺挑战也越来越大,如果光刻胶涂布稍有偏差,就会直接影响光化学反应,干扰图形转移,最终在硅片上形成大量缺陷。因此,保证光刻胶的高质量供应及涂布显得至关重要。Since the invention of semiconductors, the transformation of patterns has been achieved by photolithography. Photolithography has become the key technology for the preparation of microelectronic devices and optoelectronic devices in today's science and technology. Following Moore's Law, the size and density of semiconductor devices continue to shrink, and the current semiconductor lithography process has entered the 5nm era. The essence of lithography is pattern transfer. First, photoresist is applied to the surface of the wafer to form a photosensitive material, and the pre-designed circuit pattern of the mask is projected onto the surface of the photosensitive material by irradiating ultraviolet light through a lithography machine. The developer is developed to complete the image transfer. As the size of integrated circuits continues to shrink, the challenges of the lithography process are also increasing. If the photoresist coating is slightly biased, it will directly affect the photochemical reaction, interfere with the pattern transfer, and eventually form a large number of defects on the silicon wafer. Therefore, it is very important to ensure the high-quality supply and coating of photoresist.
一般的光刻胶供应流程为:将供应商提供的光刻胶瓶打开,插入机台管路并装上机台,通过氮气加压,经过滤膜后,光刻胶进入机台的缓冲瓶中,随后通过压力泵将光刻胶压入输送管路,到达机台端的喷嘴,进行光刻胶涂布。在实际过程中,光刻胶经过长时间运输以及氮气加压,不可避免的会在内部形成细微的气泡,气泡经过管路涂布到晶圆表面,光刻显影后在表面形成缺陷,造成晶圆大面积良率下降甚至报废。The general photoresist supply process is: open the photoresist bottle provided by the supplier, insert it into the machine pipeline and install it on the machine, pressurize it with nitrogen, and pass through the filter membrane, the photoresist enters the buffer bottle of the machine Then, the photoresist is pressed into the conveying pipeline by the pressure pump, and reaches the nozzle at the end of the machine for photoresist coating. In the actual process, the photoresist is transported for a long time and pressurized with nitrogen, and it is inevitable that fine bubbles will be formed inside. The bubbles are coated on the surface of the wafer through the pipeline. The yield rate of the large area of the circle is reduced or even scrapped.
在现有技术中,为解决光刻胶内的气泡问题,采取了多种方式,比如下三种方式:In the prior art, in order to solve the problem of air bubbles in the photoresist, various methods have been adopted, such as the following three methods:
1、首先将光刻胶存于稳定存储柜内12小时以上,通过静置尽量减少内部气泡,通过此方法只能减少因运输过程中产生的大气泡,对微小气泡的去除效果不甚理想。1. First, store the photoresist in a stable storage cabinet for more than 12 hours, and try to reduce internal air bubbles by standing. This method can only reduce the large air bubbles generated during transportation, and the removal effect of micro air bubbles is not ideal.
2、在装上机台后,通过氮气加压,将光刻胶压入滤膜,通过小孔径滤膜,减少光刻胶内微小气泡,由于内外的压差较大且滤膜效率较低,只能去除少量气泡,仍无法去除全部气泡。气泡跟随光刻胶进入缓冲瓶中,随时触发缓冲瓶内的气泡探测器报警。当触发气泡报警后,需要设备工程师进行光刻胶清除,将含有气泡的光刻胶喷出管路,以线上实际操作为例,管路的清除工作至少需要一个小时,这样不仅造成大量光刻胶浪费,而且影响机台正常作业,造成大量机时浪费。2. After installing the machine, press the photoresist into the filter membrane by nitrogen pressure, and reduce the tiny bubbles in the photoresist through the small aperture filter membrane. Due to the large pressure difference between the inside and outside, the filter membrane efficiency is low. , only a small amount of air bubbles can be removed, but not all air bubbles can be removed. The bubbles follow the photoresist into the buffer bottle, triggering the alarm of the bubble detector in the buffer bottle at any time. When the bubble alarm is triggered, the equipment engineer needs to remove the photoresist and spray the photoresist containing air bubbles out of the pipeline. Taking the actual operation online as an example, it takes at least one hour to clear the pipeline, which not only causes a large amount of light The resin is wasted, and it affects the normal operation of the machine, resulting in a lot of machine time waste.
3、目前已有部分专利公开了清除光刻胶的气泡的技术方案,原理通常是降压处理。降低压力在一定程度上有助于脱除气泡,但效率不高,且降压容易造成液体饱和蒸汽压下降,导致液体快速蒸发,使光刻材料变质,造成更大影响。3. At present, some patents have disclosed technical solutions for removing photoresist bubbles, and the principle is usually reduced pressure treatment. Reducing the pressure helps to remove bubbles to a certain extent, but the efficiency is not high, and the pressure reduction is likely to cause a drop in the saturated vapor pressure of the liquid, resulting in rapid evaporation of the liquid, deterioration of the lithography material, and greater impact.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种光刻胶气泡消除装置及光刻系统,旨在防止光刻胶在涂胶显影过程中因内部细微的气泡导致大量光刻缺陷。The purpose of the present invention is to provide a photoresist bubble elimination device and a photolithography system, which aim to prevent a large number of photolithography defects caused by the internal fine air bubbles of the photoresist during the process of coating and developing.
基于本发明的一个方面,本发明提供一种光刻胶气泡消除装置,其包括:Based on one aspect of the present invention, the present invention provides a photoresist bubble elimination device, comprising:
超声波发生器,其具有一腔体,所述腔体具有进液口和出液口,用于供所述超纯水自所述进液口进入所述腔体,并自所述出液口排出所述腔体;The ultrasonic generator has a cavity, and the cavity has a liquid inlet and a liquid outlet, for the ultrapure water to enter the cavity from the liquid inlet, and from the liquid outlet expelling the cavity;
管路,其用于输送光刻胶;A pipeline, which is used to deliver the photoresist;
缓冲瓶,其设于所述管路上且与所述管路连通,并用于容纳所述光刻胶,所述缓冲瓶的至少一部分位于所述腔体的范围之内。a buffer bottle, which is arranged on the pipeline and communicated with the pipeline, and is used for accommodating the photoresist, and at least a part of the buffer bottle is located within the scope of the cavity.
可选的,所述光刻胶气泡消除装置还包括排气缓冲室,所述排气缓冲室通过电磁阀与所述缓冲瓶连接;所述排气缓冲室可被通入氮气。Optionally, the photoresist bubble elimination device further includes an exhaust buffer chamber, the exhaust buffer chamber is connected to the buffer bottle through a solenoid valve; the exhaust buffer chamber can be supplied with nitrogen gas.
可选的,所述光刻胶气泡消除装置还包括第一压力表和第一真空泵;所述第一压力表用于检测所述排气缓冲室内的压力值;当所述第一压力表检测的压力值在第一预设范围之外时,所述第一真空泵对所述排气缓冲室抽真空。Optionally, the photoresist bubble elimination device further includes a first pressure gauge and a first vacuum pump; the first pressure gauge is used to detect the pressure value in the exhaust buffer chamber; when the first pressure gauge detects When the pressure value of is outside the first preset range, the first vacuum pump evacuates the exhaust buffer chamber.
可选的,所述光刻胶装置还包括设于所述管路上的至少一个滤除组件,所述缓冲瓶和所述滤除组件按照光刻胶的输送方向依次排布;所述滤除组件包括设于所述管路中的脱气滤膜,所述脱气滤膜具有多个滤孔,所述滤孔用于过滤所述光刻胶的气泡。Optionally, the photoresist device further includes at least one filtering component disposed on the pipeline, the buffer bottle and the filtering component are arranged in sequence according to the conveying direction of the photoresist; the filtering The assembly includes a degassing filter membrane arranged in the pipeline, the degassing filter membrane has a plurality of filter holes, and the filter holes are used for filtering the air bubbles of the photoresist.
可选的,所述脱气滤膜呈管状,且所述脱气滤膜与所述管路的内壁具有间隙以形成夹层;所述滤除组件还包括第二压力表和第二真空泵;所述第二压力表用于检测所述夹层内的压力值;当所述第二压力表检测的压力值在第二预设范围之外时,所述第二真空泵对所述夹层抽真空。Optionally, the degassing filter membrane is tubular, and there is a gap between the degassing filter membrane and the inner wall of the pipeline to form an interlayer; the filtering assembly further includes a second pressure gauge and a second vacuum pump; The second pressure gauge is used to detect the pressure value in the interlayer; when the pressure value detected by the second pressure gauge is outside the second preset range, the second vacuum pump evacuates the interlayer.
可选的,所述管路远离所述缓冲瓶的管段上设有第三压力表和压力泵;所述第一压力表用于检测所述管路中的压力值;所述压力泵用于驱使所述光刻胶沿所述管路移动。Optionally, a third pressure gauge and a pressure pump are provided on the pipe section of the pipeline away from the buffer bottle; the first pressure gauge is used to detect the pressure value in the pipeline; the pressure pump is used for The photoresist is driven along the conduit.
可选的,所述管路远离缓冲瓶的一端设有喷嘴。Optionally, a nozzle is provided at one end of the pipeline away from the buffer bottle.
可选的,所述缓冲瓶内和所述管路上分别设有至少一个气泡探测器,用于探测所述光刻胶的气泡含量,并在检测到所述光刻胶的气泡含量超过阈值时发出报警信号。Optionally, at least one air bubble detector is respectively provided in the buffer bottle and on the pipeline for detecting the air bubble content of the photoresist, and when it is detected that the air bubble content of the photoresist exceeds a threshold value. Send an alarm signal.
可选的,所述进液口靠近所述腔体的底部,所述排液口靠近所述腔体的顶部。Optionally, the liquid inlet is close to the bottom of the cavity, and the liquid discharge port is close to the top of the cavity.
基于本发明的另一个方面,本发明还提供一种光刻系统,其包括如上所述的光刻胶气泡消除装置。Based on another aspect of the present invention, the present invention also provides a photolithography system, which includes the photoresist bubble elimination device as described above.
综上所述,在本发明提供的光刻胶气泡消除装置及光刻系统中,光刻胶气泡消除装置包括管路、缓冲瓶和超声波发生器;超声波发生器具有一腔体,所述腔体具有进液口和出液口,用于供所述超纯水自所述进液口进入所述腔体,并自所述出液口排出所述腔体;管路用于输送光刻胶;缓冲瓶设于所述管路上且与所述管路连通,并用于容纳所述光刻胶,所述缓冲瓶的至少一部分位于所述腔体的范围之内。如上配置,可通过超声波发生器和超纯水的配合对缓冲瓶中的光刻胶内的气泡进行超声波脱气处理,相较于现有技术,本发明消除光刻胶内的细微气泡的效果显著,可以防止光刻胶在涂胶显影过程中因内部细微的气泡导致大量光刻缺陷。进一步地,还可在管路中设置脱起滤膜,排出可能还剩余的少量气泡,以进一步滤除光刻胶内的气泡,保证光刻胶的质量。To sum up, in the photoresist bubble elimination device and lithography system provided by the present invention, the photoresist bubble elimination device includes a pipeline, a buffer bottle and an ultrasonic generator; the ultrasonic generator has a cavity, and the cavity It has a liquid inlet and a liquid outlet for the ultrapure water to enter the cavity from the liquid inlet and discharge the cavity from the liquid outlet; the pipeline is used to transport the photoresist ; A buffer bottle is arranged on the pipeline and communicated with the pipeline, and is used for accommodating the photoresist, and at least a part of the buffer bottle is located within the range of the cavity. With the above configuration, the air bubbles in the photoresist in the buffer bottle can be degassed by ultrasonic waves through the cooperation of the ultrasonic generator and the ultrapure water. Compared with the prior art, the present invention has the effect of eliminating the fine air bubbles in the photoresist. Significantly, it can prevent the photoresist from causing a large number of photolithography defects due to internal fine air bubbles during the process of coating and developing. Further, a lift-off filter membrane can also be arranged in the pipeline to discharge a small amount of air bubbles that may remain, so as to further filter out air bubbles in the photoresist and ensure the quality of the photoresist.
附图说明Description of drawings
本领域的普通技术人员应当理解,提供的附图用于更好地理解本发明,而不对本发明的范围构成任何限定。其中:It should be understood by those of ordinary skill in the art that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention. in:
图1是本发明一实施例的光刻胶气泡消除装置的示意图;1 is a schematic diagram of a photoresist bubble elimination device according to an embodiment of the present invention;
图2是本发明一实施例的超声波发生器的示意图;2 is a schematic diagram of an ultrasonic generator according to an embodiment of the present invention;
图3是本发明一实施例的管路与脱气滤膜相配合的示意图。FIG. 3 is a schematic diagram of the fitting of a pipeline and a degassing filter membrane according to an embodiment of the present invention.
附图中:In the attached picture:
10-超声波发生器;100-腔体;101-进液口;102-出液口;20-管路;200-夹层;30-缓冲瓶;40-排气缓冲室;50-脱气滤膜;A2-第二压力表;B2-第二真空泵;A3-第三压力表;60-压力泵;70-喷嘴;80-气泡探测器;90-光刻胶瓶;A1-第一压力表;A2-第二压力表;A3-第三压力表;A3-第三压力表;B1第一真空泵;B2-第二真空泵。10-ultrasonic generator; 100-cavity; 101-liquid inlet; 102-liquid outlet; 20-pipeline; 200-interlayer; 30-buffer bottle; 40-exhaust buffer chamber; 50-degas filter membrane ; A2-second pressure gauge; B2-second vacuum pump; A3-third pressure gauge; 60-pressure pump; 70-nozzle; 80-bubble detector; 90-photoresist bottle; A1-first pressure gauge; A2-second pressure gauge; A3-third pressure gauge; A3-third pressure gauge; B1-first vacuum pump; B2-second vacuum pump.
具体实施方式Detailed ways
为使本发明的目的、优点和特征更加清楚,以下结合附图和具体实施例对本发明作进一步详细说明。需说明的是,附图均采用非常简化的形式且未按比例绘制,仅用以方便、明晰地辅助说明本发明实施例的目的。此外,附图所展示的结构往往是实际结构的一部分。特别的,各附图需要展示的侧重点不同,有时会采用不同的比例。In order to make the objects, advantages and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention. Furthermore, the structures shown in the drawings are often part of the actual structure. In particular, each drawing needs to show different emphases, and sometimes different scales are used.
如在本发明中所使用的,单数形式“一”、“一个”以及“该”包括复数对象,术语“或”通常是以包括“和/或”的含义而进行使用的,术语“若干”通常是以包括“至少一个”的含义而进行使用的,术语“至少两个”通常是以包括“两个或两个以上”的含义而进行使用的,此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括一个或者至少两个该特征,“一端”与“另一端”以及“近端”与“远端”通常是指相对应的两部分,其不仅包括端点,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。此外,如在本发明中所使用的,一元件设置于另一元件,通常仅表示两元件之间存在连接、耦合、配合或传动关系,且两元件之间可以是直接的或通过中间元件间接的连接、耦合、配合或传动,而不能理解为指示或暗示两元件之间的空间位置关系,即一元件可以在另一元件的内部、外部、上方、下方或一侧等任意方位,除非内容另外明确指出外。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。As used herein, the singular forms "a," "an," and "the" include plural referents, the term "or" is generally employed in its sense including "and/or", and the term "a number" It is usually used in the sense including "at least one", the term "at least two" is usually used in the sense including "two or more", in addition, the terms "first", "the second" "Second" and "Third" are for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first", "second", "third" may expressly or implicitly include one or at least two of those features, "one end" and "the other end" and "proximal end" and "Distal" usually refers to two corresponding parts, which not only include end points, and the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection, or It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication between the two elements or the interaction relationship between the two elements. In addition, as used in the present invention, the arrangement of one element on another element generally only means that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the relationship between the two elements may be direct or indirect through intermediate elements connection, coupling, cooperation or transmission, and should not be construed as indicating or implying the spatial positional relationship between two elements, that is, one element can be in any position inside, outside, above, below or on one side of the other element, unless the content Also clearly stated. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.
本发明一实施例提供一种光刻胶气泡消除装置及光刻系统,旨在防止光刻胶在涂胶显影过程中因内部细微的气泡导致大量光刻缺陷。An embodiment of the present invention provides a photoresist bubble elimination device and a photolithography system, which are intended to prevent a large number of photolithography defects caused by fine air bubbles in the photoresist during the process of coating and developing.
下面请结合附图对本实施例的光刻胶气泡消除装置及光刻系统进行详细地描述。The photoresist bubble removing device and the photolithography system of this embodiment will be described in detail below with reference to the accompanying drawings.
图1是本发明一实施例的光刻胶气泡消除装置的示意图。如图1所示,光刻胶气泡消除装置包括超声波发生器10、管路20及缓冲瓶30。图2是本发明一实施例的超声波发生器10的示意图,结合参阅图2,超声波发生器10具有一腔体100,所述腔体100具有进液口101和出液口102,用于供所述超纯水自所述进液口101进入所述腔体100,并自所述出液口102排出所述腔体100。管路20用于输送光刻胶。缓冲瓶30,其设于所述管路20上且与所述管路20连通,并用于容纳所述光刻胶,所述缓冲瓶30的至少一部分位于所述腔体100的范围之内,并可被超纯水浸没。进一步地,所述缓冲瓶30内和所述管路20上分别设有至少一个气泡探测器80,用于探测所述光刻胶的气泡含量,并在检测到所述光刻胶的气泡含量超过阈值时发出报警信号。比如缓冲瓶30沿竖向依次设置三个气泡探测器80,管路20上可以设置两个气泡探测器80。报警信号比如可以是声音信号,提示操作人员气泡含量是否超标。FIG. 1 is a schematic diagram of a photoresist bubble removing apparatus according to an embodiment of the present invention. As shown in FIG. 1 , the photoresist bubble elimination device includes an
具体地,管路20的一端连接供应商提供的光刻胶瓶90,管路20的另一端连接喷嘴70,管路20上设于缓冲瓶30,且缓冲瓶30位于超声波发生装置的腔体100内。可通过向光刻胶瓶90中通入氮气,以氮气加压的方式将光刻胶压入管路20中,从而经过进入缓冲瓶30中,通过超声波发生装置和超纯水的配合将缓冲瓶30中的光刻胶内的气泡消除,当缓冲瓶30内的气泡探测装置不再发出报警信号后,将光刻胶继续压入管路20中,当管路20中设置的气泡探测装置也不再发出报警信号后,随后将光刻胶通过管路20设置的喷嘴70喷出而进行光刻胶涂布。Specifically, one end of the
可理解的,超声波发生器10可以发出超声波,超声波指的是频率高于20000Hz的声波,超声波的方向性较好,有较强的反射能力,在液体中传播较快(本实施在腔体100中通入超纯水),可以获得较高的集中能量。当超声波在液体中进行传播时,会产生交替的压力,在正压相位时超声波对介质分子进行挤压,增加介质密度;在负压相位时使介质分子疏松,介质密度减小。当有足够大的声波振幅作用于介质时,介质分子之间平均距离改变,介质之间发生断裂,即形成微泡,当张力继续存在时,这些微泡会进行扩张生长,并发生猛烈碰撞。溶液中气体成分会通过气-液界面与这些空化气泡进行扩散,当达到一定尺寸后,空化气泡在溶液表面崩溃逸出,这就形成了超声波脱气作用。相较于现有技术,本发明消除光刻胶内的细微气泡的效果显著,可以防止光刻胶在涂胶显影过程中因内部细微的气泡导致大量光刻缺陷。一方面,超纯水可为超声波发生器10提供声波传播介质,另一方面,超纯水是依次从进液口101和排液口经过腔体100,保证超纯水处于流动状态,避免超声波长时间工作后超纯水的温度上升而导致缓冲瓶30的温度上升,并最终影响光刻胶性能,流动的超纯水可以使缓冲瓶30保持在光刻机台的温度范围内。优选地,进液口101靠近所述腔体100的底部,排液口靠近所述腔体100的顶部,使得超纯水从腔体100的下方进入,从腔体100的上方排出。在一实施例中,超纯水保持22℃恒温,流速为10~50ml/min。Understandably, the
进一步地,所述光刻胶气泡消除装置还包括排气缓冲室40,所述排气缓冲室40通过电磁阀(未图示)与所述缓冲瓶30连接;所述排气缓冲室40可被通入氮气。电磁阀打开时,氮气从缓冲室进入缓冲瓶30中,将已经超声波脱气的光刻胶压入管路20中进行输送。所述光刻胶气泡消除装置还包括第一压力表A1和第一真空泵B1;所述第一压力表A1用于检测所述排气缓冲室40内的压力值;当所述第一压力表A1检测的压力值在第一预设范围之外时,所述第一真空泵B1对所述排气缓冲室40抽真空。关闭电磁阀,当第一压力表A1检测到压力超过第一预设范围时(通常是气压上升),第一真空泵B1工作,气压下降则会通过通入氮气来补充,保证缓冲瓶30内的气压稳定至常压。Further, the photoresist bubble elimination device further includes an
优选地,所述光刻胶装置还包括设于所述管路20上的至少一个滤除组件(优选为设置至少两个),所述缓冲瓶30和所述滤除组件按照光刻胶的输送方向依次排布;所述滤除组件包括设于所述管路20中的脱气滤膜50,所述脱气滤膜50具有多个滤孔,所述滤孔用于过滤所述光刻胶的气泡。脱气滤膜50上的滤孔的孔径较小,满足仅允许透过气体而不能透过液体,通过设置脱气滤膜50,可以排出可能还残留的少量细微气泡,以进一步滤除光刻胶内的气泡,保证光刻胶的质量。需说明的是,管路20和脱气滤膜50的材质可以是相同的,比如均为薄膜材质。Preferably, the photoresist device further includes at least one filtering component (preferably at least two) disposed on the
图3是本发明一实施例的管路与脱气滤膜相配合的示意图。进一步地,所述脱气滤膜50呈管状,参阅图3,所述脱气滤膜50与所述管路20的内壁具有间隙以形成夹层200;所述滤除组件还包括第二压力表A2和第二真空泵B2;所述第二压力表A2用于检测所述夹层200内的压力值;当所述第二压力表A2检测的压力值在第二预设范围之外时,所述第二真空泵B2对所述夹层200抽真空。当脱气滤膜50过滤气泡后,夹层200内气压上升,第二压力表A2检测到压力值超过第二预设范围,第二真空泵B2从而对夹层200抽真空处理以降压。FIG. 3 is a schematic diagram of the fitting of a pipeline and a degassing filter membrane according to an embodiment of the present invention. Further, the
进一步地,所述管路20远离所述缓冲瓶30的管段上设有第三压力表A3和压力泵60。所述压力泵60用于驱使所述光刻胶沿所述管路20移动,通过超声波发生器10和脱气滤膜50的处理,且管路20中的气泡探测器80没有发出报警信号,可利用压力泵60将光刻胶压入到喷嘴70处进行涂胶工作。所述第一压力表A1用于检测所述管路20中的压力值,保证管路20中的压力值在设定的范围内,从而确保光刻胶的输送速率在预定速率范围内,避免光刻胶输送过快或过慢,保证喷嘴70平稳喷出光刻胶,保证均匀涂胶。Further, a third pressure gauge A3 and a
基于上述的光刻胶气泡消除装置,本实施例还提供一种光刻系统,其包括如上所述的光刻胶气泡消除装置。进一步地,光刻系统包括机台和如上所述的光刻胶气泡消除装置,且光刻胶气泡消除装置设置于所述机台内。Based on the above photoresist bubble elimination device, the present embodiment further provides a photolithography system, which includes the above photoresist bubble elimination device. Further, the lithography system includes a machine and the photoresist bubble elimination device as described above, and the photoresist bubble elimination device is arranged in the machine.
本发明在不干扰机台主体的条件下,只需要替换机台内的部分零件,即可实现光刻胶内气泡消除,装置简单,操作风险小,无需改造机台,可以进行大规模推广。发明人通过实践发现,运用包括所述光刻胶气泡消除装置的光刻系统,每月可减少光刻胶损失1~3万美元,减少机台损失的作业时间20~40小时,并极大降低了因气泡造成的晶圆缺陷率。Under the condition of not disturbing the main body of the machine, the invention can realize the elimination of bubbles in the photoresist only by replacing some parts in the machine. The inventor found through practice that the use of the photolithography system including the photoresist bubble elimination device can reduce the loss of photoresist by 10,000 to 30,000 US dollars per month, reduce the operating time of machine loss by 20 to 40 hours, and greatly reduce the loss of photoresist by 20 to 40 hours. Reduced wafer defect rate due to air bubbles.
综上所述,在本发明提供的光刻胶气泡消除装置及光刻系统中,光刻胶气泡消除装置包括管路、缓冲瓶和超声波发生器;超声波发生器具有一腔体,所述腔体具有进液口和出液口,用于供所述超纯水自所述进液口进入所述腔体,并自所述出液口排出所述腔体;管路用于输送光刻胶;缓冲瓶设于所述管路上且与所述管路连通,并用于容纳所述光刻胶,所述缓冲瓶的至少一部分位于所述腔体的范围之内。如上配置,可通过超声波发生器和超纯水的配合对缓冲瓶中的光刻胶内的气泡进行超声波脱气处理,相较于现有技术,本发明消除光刻胶内的细微气泡的效果显著,可以防止光刻胶在涂胶显影过程中因内部细微的气泡导致大量光刻缺陷。进一步地,还可在管路中设置脱起滤膜,排出可能还剩余的少量气泡,以进一步滤除光刻胶内的气泡,保证光刻胶的质量。To sum up, in the photoresist bubble elimination device and lithography system provided by the present invention, the photoresist bubble elimination device includes a pipeline, a buffer bottle and an ultrasonic generator; the ultrasonic generator has a cavity, and the cavity It has a liquid inlet and a liquid outlet for the ultrapure water to enter the cavity from the liquid inlet and discharge the cavity from the liquid outlet; the pipeline is used to transport the photoresist ; A buffer bottle is arranged on the pipeline and communicated with the pipeline, and is used for accommodating the photoresist, and at least a part of the buffer bottle is located within the range of the cavity. With the above configuration, the air bubbles in the photoresist in the buffer bottle can be degassed by ultrasonic waves through the cooperation of the ultrasonic generator and the ultrapure water. Compared with the prior art, the present invention has the effect of eliminating the fine air bubbles in the photoresist. Significantly, it can prevent the photoresist from causing a large number of photolithography defects due to internal fine air bubbles during the process of coating and developing. Further, a lift-off filter membrane can also be arranged in the pipeline to discharge a small amount of air bubbles that may remain, so as to further filter out air bubbles in the photoresist and ensure the quality of the photoresist.
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于本发明技术方案的保护范围。The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention according to the above disclosure all belong to the protection scope of the technical solutions of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210158300.7A CN114488697A (en) | 2022-02-21 | 2022-02-21 | Photoresist bubble elimination device and photolithography system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210158300.7A CN114488697A (en) | 2022-02-21 | 2022-02-21 | Photoresist bubble elimination device and photolithography system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114488697A true CN114488697A (en) | 2022-05-13 |
Family
ID=81482908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210158300.7A Pending CN114488697A (en) | 2022-02-21 | 2022-02-21 | Photoresist bubble elimination device and photolithography system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114488697A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114985149A (en) * | 2022-05-30 | 2022-09-02 | 华虹半导体(无锡)有限公司 | Liquid supply system |
| CN115502052A (en) * | 2022-09-29 | 2022-12-23 | 颀中科技(苏州)有限公司 | Buffer device suitable for high-viscosity photoresist and photoresist liquid supply system |
| CN120733906A (en) * | 2025-09-02 | 2025-10-03 | 广州芯知科技有限公司 | Photoresist distribution system and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2056292A (en) * | 1978-11-06 | 1981-03-18 | Fuji Photo Film Co Ltd | Method and apparatus for dissolving entrained bubbles in a liquid |
| JP2001121063A (en) * | 1999-10-26 | 2001-05-08 | Tokyo Electron Ltd | Filter device and liquid processing device |
| CN102193341A (en) * | 2010-03-11 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method and device for processing photoresist |
| CN109445254A (en) * | 2018-11-16 | 2019-03-08 | 福建省福联集成电路有限公司 | A kind of device reducing development pipeline bubble |
| CN113341654A (en) * | 2020-02-18 | 2021-09-03 | 长鑫存储技术有限公司 | Photoresist supply device |
-
2022
- 2022-02-21 CN CN202210158300.7A patent/CN114488697A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2056292A (en) * | 1978-11-06 | 1981-03-18 | Fuji Photo Film Co Ltd | Method and apparatus for dissolving entrained bubbles in a liquid |
| JP2001121063A (en) * | 1999-10-26 | 2001-05-08 | Tokyo Electron Ltd | Filter device and liquid processing device |
| CN102193341A (en) * | 2010-03-11 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method and device for processing photoresist |
| CN109445254A (en) * | 2018-11-16 | 2019-03-08 | 福建省福联集成电路有限公司 | A kind of device reducing development pipeline bubble |
| CN113341654A (en) * | 2020-02-18 | 2021-09-03 | 长鑫存储技术有限公司 | Photoresist supply device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114985149A (en) * | 2022-05-30 | 2022-09-02 | 华虹半导体(无锡)有限公司 | Liquid supply system |
| CN115502052A (en) * | 2022-09-29 | 2022-12-23 | 颀中科技(苏州)有限公司 | Buffer device suitable for high-viscosity photoresist and photoresist liquid supply system |
| WO2024066800A1 (en) * | 2022-09-29 | 2024-04-04 | 颀中科技(苏州)有限公司 | Buffer device suitable for high-viscosity photoresist, and photoresist liquid supply system |
| CN120733906A (en) * | 2025-09-02 | 2025-10-03 | 广州芯知科技有限公司 | Photoresist distribution system and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114488697A (en) | Photoresist bubble elimination device and photolithography system | |
| CN102725824B (en) | The supersonic cleaning liquid, method and the equipment thereof that improve | |
| US20080017219A1 (en) | Transducer assembly incorporating a transmitter having through holes, and method and system for cleaning a substrate utilizing the same | |
| JP6942497B2 (en) | Processing liquid supply device | |
| JP5257915B2 (en) | Film coating apparatus and film coating method | |
| TW200804008A (en) | Method and apparatus for cleaning substrate, and program recording medium | |
| CN107808833B (en) | Treatment liquid supply device | |
| JP5231028B2 (en) | Coating liquid supply device | |
| JP5894858B2 (en) | Ultrasonic cleaning method | |
| CN108025335A (en) | Handle liquid supplying device, base plate processing system and treatment fluid supply method | |
| CN106076926A (en) | Bubbling-cleaning system and method | |
| JP4470101B2 (en) | Nitrogen-dissolved ultrapure water production method | |
| JP2010199124A (en) | Apparatus for supplying ozone water | |
| US20050115405A1 (en) | Method and apparatus for degassing coating liquid | |
| KR100934800B1 (en) | High Viscosity Photoresist Coating Device with Buffer Tank and Vibrator | |
| JP5526118B2 (en) | Ultrasonic cleaning method | |
| KR20140047636A (en) | Liquid photoresist supply equipment | |
| WO2010097896A1 (en) | Cleaning nozzle and cleaning method | |
| TW200830391A (en) | Substrate cleaning apparatus, substrate cleaning method, program and recording medium | |
| JP2002200453A (en) | Coating device and coating method | |
| JP2011088109A (en) | Degassing vessel and coating apparatus | |
| JPH0969506A (en) | Ultrasonic cleaning system | |
| JPH05267149A (en) | Resist liquid sending device | |
| TWI842869B (en) | System for supplying a rinsing liquid comprising ultrapure water and an ammonia gas and method for supplying a rinsing liquid comprising ultrapure water with a desired concentration of an ammonia gas dissolved therein | |
| JPH0945615A (en) | Semiconductor device manufacturing apparatus and manufacturing method using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |