CN114487545B - Current sensor, electronic device and detection device - Google Patents
Current sensor, electronic device and detection device Download PDFInfo
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- CN114487545B CN114487545B CN202111680902.0A CN202111680902A CN114487545B CN 114487545 B CN114487545 B CN 114487545B CN 202111680902 A CN202111680902 A CN 202111680902A CN 114487545 B CN114487545 B CN 114487545B
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Abstract
The invention discloses a current sensor, electronic equipment and a detection device, wherein the current sensor comprises a detection circuit and a sensing assembly, the detection circuit is used for being conducted with a circuit to be detected of a chip, the sensing assembly comprises a plurality of magnetic resistance units formed on the chip, the magnetization direction of a pinning layer of each magnetic resistance unit is arranged along the thickness direction of the pinning layer, at least two magnetic resistance units in the plurality of magnetic resistance units are connected to form a half-bridge circuit, the detection circuit at least comprises a first detection section and a second detection section which are arranged in parallel and respectively wound on the periphery sides of the two magnetic resistance units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
Description
Technical Field
The present invention relates to the field of sensors, and in particular, to a current sensor, an electronic device, and a detection device.
Background
In the field of new energy automobiles, current detection is an important link in chip reliability testing. The built-In Self-Test technology (Built-In-Self-Test, BIST) is used for the built-In Current Sensor (Built-In-Current-Sensor, BICS) integrated between the tested circuit (Circuit Under Test, CUT) and the power supply, and the defect information of the tested circuit can be obtained by processing and analyzing the Current flowing through the tested circuit.
Disclosure of Invention
The invention mainly aims to provide a current sensor, electronic equipment and a detection device, and provides a current sensor with a wide range based on a tunneling magneto-resistance effect.
To achieve the above object, the present invention provides a current sensor including:
a detection circuit for conducting with the circuit to be detected of the chip, and
The sensing assembly comprises a plurality of magnetic resistance units formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance unit is arranged along the thickness direction of the pinning layer, and at least two magnetic resistance units in the plurality of magnetic resistance units are connected to form a half-bridge circuit;
The detection circuit at least comprises a first detection section and a second detection section which are arranged in parallel and respectively wound on the periphery of the two magnetic resistance units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
Optionally, the sensing component comprises four magnetic resistance units, and the four magnetic resistance units are connected to form a full bridge circuit;
The detection circuit comprises two first detection circuits, and each first detection circuit is provided with a first detection section and a second detection section so as to be arranged around the corresponding magnetic resistance unit.
Alternatively, a plurality of the magneto-resistive units are arranged on the same straight line.
Alternatively, two of the first detection lines are arranged in series, or
The two first detection circuits are arranged in parallel.
Optionally, the sensing component comprises four magnetic resistance units, and the four magnetic resistance units are connected to form a full bridge circuit;
The two first detection sections are arranged in series, the two first detection sections are respectively wound on the two magnetic resistance units, and the magnetic field directions of the two corresponding first induction magnetic fields are opposite;
The second detection sections are arranged in series, two of the second detection sections are respectively wound on two of the magnetic resistance units, and the magnetic field directions of the two second induction magnetic fields generated correspondingly are opposite.
Optionally, at least one of the magnetoresistive cells comprises a plurality of magnetic tunnel junctions in series, and/or,
At least one of the magnetic resistance units comprises a plurality of magnetic tunnel junction units which are arranged in parallel, and each magnetic tunnel junction unit comprises a plurality of magnetic tunnel junctions which are sequentially connected in series.
Optionally, the detection line is wound around a circumference side of each of the magnetic tunnel junctions.
Optionally, the detection line is wound around a circumference of an array of a plurality of the magnetic tunnel junction cells.
Optionally, the detection circuit and the top electrode of each magnetic resistance unit are arranged on the same plane.
The invention also provides an electronic device comprising the current sensor, wherein the current sensor at least comprises:
a detection circuit for conducting with the circuit to be detected of the chip, and
The sensing assembly comprises a plurality of magnetic resistance units formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance unit is arranged along the thickness direction of the pinning layer, and at least two magnetic resistance units in the plurality of magnetic resistance units are connected to form a half-bridge circuit;
The detection circuit at least comprises a first detection section and a second detection section which are arranged in parallel and respectively wound on the periphery of the two magnetic resistance units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
The invention also provides a detection device, which comprises the current sensor, wherein the current sensor at least comprises:
a detection circuit for conducting with the circuit to be detected of the chip, and
The sensing assembly comprises a plurality of magnetic resistance units formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance unit is arranged along the thickness direction of the pinning layer, and at least two magnetic resistance units in the plurality of magnetic resistance units are connected to form a half-bridge circuit;
The detection circuit at least comprises a first detection section and a second detection section which are arranged in parallel and respectively wound on the periphery of the two magnetic resistance units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
According to the technical scheme, the current flowing into the detection circuit is the current to be detected, the resistance value of each magnetic resistance unit is known, when the current to be detected passes through the detection circuit according to the right hand rule, in a bridge structure formed by the magnetic resistance units, a magnetic field perpendicular to the arrangement planes of the magnetic resistance units is correspondingly generated on each magnetic resistance unit, the magnetic field can influence the resistance value of the corresponding magnetic resistance unit, and according to the winding mode of the detection circuit, the directions of a first induction magnetic field and a second induction magnetic field correspondingly generated by the first detection section and the second detection section are opposite, so that the magnetic resistance units in the detection circuit respectively show a high resistance state and a low resistance state, and at the moment, the corresponding magnetic field size is judged and the magnitude of the current to be detected is deduced by reading the change of the output voltage of the bridge structure. With the structure, the detection circuit is designed with the first detection section and the second detection section connected in parallel, so that a wider range of circuit quantity can be perceived after the current to be detected flows, and a larger range is provided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a first embodiment of a current sensor according to the present invention;
FIG. 2 is a schematic diagram of the magnetic field direction of the current sensor of FIG. 1;
FIG. 3 is a schematic diagram of an embodiment of the magnetoresistive cell of FIG. 1;
FIG. 4 is a schematic diagram of another embodiment of the magnetoresistive cell of FIG. 1;
FIG. 5 is a schematic diagram of a magnetic tunnel junction in the magnetoresistive cell of FIG. 1;
FIG. 6 is a schematic diagram of a second embodiment of a current sensor according to the present invention;
Fig. 7 is a schematic diagram of a third embodiment of a current sensor according to the present invention.
Reference numerals illustrate:
| Reference numerals | Name of the name | Reference numerals | Name of the name |
| 100 | Current sensor | 21 | First detection circuit |
| 11 | Magnetoresistive cell | 211 | First detection section |
| 111 | Magnetic tunnel junction | 212 | Second detection section |
| 2 | Detection circuit |
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the case where a directional instruction is involved in the embodiment of the present invention, the directional instruction is merely used to explain the relative positional relationship, movement condition, etc. between the components in a specific posture, and if the specific posture is changed, the directional instruction is changed accordingly.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
In the field of new energy automobiles, current detection is an important link in chip reliability test, especially in scenes such as power batteries, driving motors and the like, a miniature current sensor with wide range and high precision is needed, and the current change of the miniature current sensor is monitored on line in real time, so that the working state is judged. The current detection has two modes of on-chip and off-chip, and compared with off-chip testing, the on-chip testing is a more efficient and reliable method. In-chip testing uses built-In Self-Test (BIST) technology, a built-In Current Sensor (Built-In-Current-Sensor, BICS) is integrated between a circuit to be tested (Circuit Under Test, CUT) and a power supply, and the defect information of the circuit to be tested can be obtained by processing and analyzing the Current flowing through the circuit to be tested. Among all kinds of built-in current sensors BICS, the current sensor based on giant magnetoresistance (Giant Magnetoresistance, GMR) or tunneling magnetoresistance effect (Tunneling Magnetoresistance, TMR) has great application value due to the advantages of high sensitivity, small volume, low power consumption, compatibility with complementary metal Oxide semiconductor (Complementary Metal-Oxide-Semiconductor Transistor, CMOS) technology and the like. Such magnetoresistive sensors detect the magnitude of a current by measuring the magnetic field generated by the current.
In view of this, the present invention provides a current sensor that detects the magnitude of a current by measuring a magnetic field generated by the current based on a tunneling magnetoresistance effect. Fig. 1 to 7 are schematic diagrams of an embodiment of a current sensor provided by the present invention.
Referring to fig. 1 to 2, the current sensor 100 includes a detection circuit 2 and a sensing component, the detection circuit 2 is configured to be conducted with a circuit to be detected of a chip, the sensing component includes a plurality of magnetoresistive units 11 formed on the chip, a magnetization direction of a pinned layer of each magnetoresistive unit 11 is set along a thickness direction of the magnetoresistive unit, at least two magnetoresistive units 11 in the plurality of magnetoresistive units 11 are connected to form a half-bridge circuit, wherein the detection circuit 2 includes at least a first detection section 211 and a second detection section 212 which are disposed in parallel and respectively wound around a circumference side of the two magnetoresistive units 11, the first detection section 211 generates a first induced magnetic field, the second detection section 212 generates a second induced magnetic field, and spiral directions of currents flowing through the first detection section 211 and the second detection section 212 are reversely set so that the first induced magnetic field is opposite to the second induced magnetic field.
In the technical solution of the present invention, the current flowing in the detection circuit 2 is the current to be detected, the resistance value of each magneto-resistive unit 11 is known, when the current to be detected passes through the detection circuit 2 according to the right hand rule, in the bridge structure formed by each magneto-resistive unit 11, a magnetic field perpendicular to the planes of the plurality of magneto-resistive units 11 is correspondingly generated on each magneto-resistive unit 11, the magnetic field affects the resistance value of the corresponding magneto-resistive unit 11, and according to the winding mode of the detection circuit 2, the directions of the first induced magnetic field and the second induced magnetic field correspondingly generated by the first detection section 211 and the second detection section 212 are opposite, so that the magneto-resistive units 11 in the first detection section and the second detection section respectively present a high resistance state and a low resistance state. With this structure, the detection circuit 2 is configured with the first detection section 211 and the second detection section 212 connected in parallel, so that a wider range of circuit quantity can be perceived after the current to be detected flows, and a larger range is provided.
The present invention is not limited to the composition of each of the magnetoresistive units 11, in one embodiment, at least one of the magnetoresistive units 11 includes a plurality of magnetic tunnel junctions 111 sequentially connected in series, in another embodiment, at least one of the magnetoresistive units 11 includes a plurality of magnetic tunnel junction units disposed in parallel, each of the magnetic tunnel junction units includes a plurality of magnetic tunnel junctions 111 sequentially connected in series, and in other embodiments, each of the magnetoresistive units 11 is formed by connecting a plurality of magnetic tunnel junctions 111 in series and/or in parallel, that is, each of the magnetoresistive units 11 may be formed by a single magnetic tunnel junction 111, or may be formed by connecting a plurality of magnetic tunnel junctions 111 in series and/or in parallel. In particular, the structural composition of each magnetoresistive unit 11 may be the same or different according to the design range of the current sensor 100, and in this embodiment, the compositions of each magnetoresistive unit 11 are the same, so that the magnetoresistive units 11 have good consistency, and are convenient for calculation and analysis comparison.
Further, the present invention is not limited to the winding manner of the first detecting section 211, the second detecting section 212 and each of the magnetic tunnel junctions 111, in one embodiment, referring to fig. 3, the detecting circuit 2 is wound around the circumference of each of the magnetic tunnel junctions 111, and in another embodiment, referring to fig. 4, the detecting circuit 2 is wound around the circumference of an array formed by a plurality of magnetic tunnel junction units. The two winding modes can realize the functions, in comparison with the two winding modes, the detection circuit 2 is wound on the periphery of each magnetic tunnel junction 111, so that the processing difficulty is high, the precision requirement is higher, and the processing time is longer.
Further, in the embodiment of the present invention, the basic film structure of the magnetic tunnel junction 111 is shown in fig. 5, and includes a seed layer, an antiferromagnetic layer or a synthetic antiferromagnetic layer, a pinned layer, a tunneling layer, a free layer, a capping layer, and the like, which are sequentially arranged. The direction of the pinning layer is pinned in the direction perpendicular to the plane of the thin film by an antiferromagnetic layer or a synthetic antiferromagnetic layer below the pinning layer, the magnetic moment direction of the free layer can rotate along with a perpendicular external magnetic field to form a certain included angle with the magnetic moment direction of the pinning layer, the tunneling layer plays a role of separation, electrons pass through the tunneling layer to generate tunneling effect, the covering layer is a protective layer to prevent oxidization, the substrate is a manufacturing substrate, the seed layer is used for improving the roughness of the substrate, so that the surface of the substrate is smoother, a lattice structure which is more matched with the layer structure playing a function role is provided, lattice matching is achieved, the magnetic moment direction of the pinning layer is fixed and is along the direction pointing to the direction perpendicular to the plane, and the magnetic moment direction of the free layer can relatively rotate under the action of the corresponding magnetic field force to form an included angle with the magnetic moment direction of the pinning layer. Each of the magnetoresistive elements 11 is constituted by a magnetic tunnel structure having perpendicular magnetic anisotropy, so as to change under the influence of a magnetic field in a perpendicular plane direction generated by the cooperation of the detection lines 2, so as to change an angle with a magnetic moment direction of the pinned layer, thereby causing a change in resistance value. The current sensor 100 has improved storage density and reliability compared to conventional designs.
It should be noted that, the resistance value changes with the angle between the magnetization directions of the free layer and the pinned layer, and is in a low resistance state when the magnetic moment direction of the free layer is the same as the magnetic moment direction of the pinned layer, and is in a high resistance state when the magnetic moment direction of the free layer is opposite to the magnetic moment direction of the pinned layer.
Furthermore, in an embodiment of the present invention, the detection circuit 2 and the top electrode of each magnetoresistive cell 11 are disposed on the same plane, that is, during processing, the detection circuit 2 and the top electrode of the corresponding magnetic tunnel junction 111 may be integrated on the same layer of the circuit layout, so that the process steps are simplified, and meanwhile, the distance between the detection circuit 2 and the magnetoresistive cell 11 is reduced, and it should be noted that the processing preparation of the top electrode and the detection circuit 2 may be simultaneously implemented through steps such as photolithography, vapor deposition, and the like.
In the present invention, the magnetic field generated by the detection circuit 2 only needs to affect part of the resistance state of the magnetoresistive element 11. In an embodiment, the sensing assembly includes four magnetoresistive units 11, the four magnetoresistive units 11 are connected to form a full bridge circuit, the detection circuit 2 includes two first detection circuits 21, and each first detection circuit 21 has the first detection section 211 and the second detection section 212, so as to be disposed around the corresponding magnetoresistive unit 11. That is, the four magneto-resistive elements 11 are respectively influenced by the two first and second induced magnetic fields to change them into two high-resistance states and two low-resistance states.
Further, referring to fig. 2, the two first detection lines 21 are arranged in parallel, when a current is input into the detection line 2, the current is split into the two first detection lines 21 for the first time, and then split into the corresponding first detection segment 211 and second detection segment 212 for the second time in each first detection line 21, in this structural state, the first detection segment 211 and the second detection segment 212 surrounding the circumference of the two magnetoresistive units 11 on the same first detection line 21 are arc-shaped, and the openings of the arc are arranged oppositely, and after the current to be measured is introduced into the detection line 2, the magnitude of the current to be measured can be deduced by reading the change of the output voltage of the bridge.
In another embodiment, referring to fig. 7, two first detection lines 21 are disposed in series, and after a current to be measured is introduced, two magnetic fields with opposite directions are correspondingly formed in each first detection line 21, so that the resistance states of two magneto-resistive units 11 correspondingly wound in each first detection line 21 and each first detection section 211 and each second detection section 212 are changed in height.
In other embodiments, referring to fig. 6, the sensing assembly includes four magnetoresistive units 11, the four magnetoresistive units 11 are connected to form a full bridge circuit, two first detecting sections 211 are disposed in series, two first detecting sections 211 are respectively wound around two of the magnetoresistive units 11, the magnetic field directions of the two first induced magnetic fields generated correspondingly are opposite, two second detecting sections 212 are disposed in series, and two second detecting sections 212 are respectively wound around two of the magnetoresistive units 11, and the magnetic field directions of the two second induced magnetic fields generated correspondingly are opposite. At this time, after the current to be measured is introduced, the current is split once and enters two branches, and the first detection section 211 and the second detection section 212 on each branch are not split, but care needs to be taken that the two first detection sections 211 or the two second detection sections 212 on the same branch are in the winding direction of the corresponding two sides of the magnetic resistance unit 11, so that the two first detection sections 211 are required to be ensured to be oppositely arranged corresponding to the two circular arc-shaped openings formed by winding the two magnetic resistance units 11, and the two opposite directions of induction magnetic fields can be formed around the side edges of the two magnetic resistance units 11.
Furthermore, in other embodiments, two first detecting sections 211 and two second detecting sections 212 are respectively disposed and are all disposed in parallel, and are staggered with each other, and in the arrangement direction of each first detecting section 211 and each second detecting section 212, the directions of induced magnetic fields formed by adjacent first detecting sections 211 and second detecting sections 212 on the corresponding magnetoresistive units 11 are opposite, so that the four magnetoresistive units 11 are respectively distributed in a high-resistance state and a low-resistance state.
In this embodiment, referring to fig. 2 again, the four magneto-resistive units 11 are arranged on a straight line, and the straight line is orthogonal to the current flowing direction in the detection circuit 2. Thus, wiring arrangement of a plurality of the magnetic resistance units 11 is facilitated, and miniaturization design is facilitated.
In the existing built-in current sensor, the detection circuit needs to be distributed on the top of the magnetic resistance unit to generate the magnetic field to be detected in the plane of the magnetic resistance unit, so that an insulating layer with a certain thickness such as silicon oxide or silicon nitride needs to be added to isolate the detection circuit from the magnetic resistance unit, and the magnetic field to be detected generated by the current to be detected is greatly reduced along with the increase of the distance between the detection circuit and the magnetic resistance unit. According to the invention, the vertical magnetic tunnel junctions are used for manufacturing the current sensor 100, the detection lines 2 are distributed in the shape of a ring along the magnetic tunnel junctions 111, so that an insulating layer is not required to be used in micro-nano processing, the detection lines 2 and the top electrodes of the corresponding magnetic tunnel junctions 111 are directly integrated on the same layer of a layout, the process steps are simplified, the distance between the detection lines 2 and the magnetic resistance units 11 is reduced, and the magnetic field to be measured on the magnetic resistance units 11 is improved relative to the prior scheme.
In the technical scheme of the invention, the detection circuit 2 and the four magnetic resistance units 11 which are arranged in a surrounding way form a Wheatstone full-bridge current sensor together. The first detection section 211 or the second detection section 212 surrounding each magnetoresistive element 11 generates a magnetic field perpendicular to the plane direction after the current to be measured is introduced, and the different current surrounding directions generate induced magnetic fields in opposite directions, so as to affect the magnetic moment direction of the free layer in the magnetic tunnel junction 111 with perpendicular magnetic anisotropy, so that the resistance state of the magnetoresistive element 11 is changed, and the output voltage is changed, thereby forming the built-in, wide-range and high-precision micro current sensor 100. In addition, as the size of the magnetic tunnel junction 111 is reduced, the radius of the detection line 2 and the distance between the detection line and the magnetic tunnel junction 111 can be further reduced, the magnetic field generated by the current to be detected can be further increased, the sensitivity of the current sensor 100 is improved, and the current detection as small as microamperes or even nanoamperes is realized. The design of the current sensor 100 can realize wide-range and high-precision application, can realize large-current detection by adjusting the width, radius, distance between the magnetic resistance unit 11 and other parameters of the detection circuit 2, can be used for detecting the battery current of a new energy automobile, and has wide application range.
The present invention also provides an electronic device, including the above-mentioned current sensor 100, where the electronic device includes all the technical features of the above-mentioned current sensor 100, so that the electronic device also has technical effects brought by all the above-mentioned technical features, which are not described in detail herein.
The present invention also provides a detection device, including the above-mentioned current sensor 100, where the detection device includes all the technical features of the above-mentioned current sensor 100, so that the detection device also has technical effects brought by all the above-mentioned technical features, and will not be described in detail herein.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.
Claims (11)
1. A kind of current sensor, characterized by comprising the following steps:
a detection circuit for conducting with the circuit to be detected of the chip, and
The sensing assembly comprises a plurality of magnetic resistance units formed on the chip, wherein the magnetization direction of a pinning layer of each magnetic resistance unit is arranged along the thickness direction of the pinning layer, and at least two magnetic resistance units in the plurality of magnetic resistance units are connected to form a half-bridge circuit;
The detection circuit at least comprises a first detection section and a second detection section which are arranged in parallel and respectively wound on the periphery of the two magnetic resistance units, the first detection section generates a first induction magnetic field, the second detection section generates a second induction magnetic field, and the spiral directions of currents flowing through the first detection section and the second detection section are reversely arranged, so that the first induction magnetic field is opposite to the second induction magnetic field.
2. The current sensor of claim 1, wherein the sensing assembly comprises four magneto-resistive elements connected to form a full bridge circuit;
The detection circuit comprises two first detection circuits, and each first detection circuit is provided with a first detection section and a second detection section so as to be arranged around the corresponding magnetic resistance unit.
3. A current sensor according to claim 1 or 2, wherein a plurality of said magneto-resistive elements are arranged in a same straight line.
4. The current sensor according to claim 2, wherein two of the first detection lines are arranged in series, or
The two first detection circuits are arranged in parallel.
5. The current sensor of claim 1, wherein the sensing assembly comprises four magneto-resistive elements connected to form a full bridge circuit;
The two first detection sections are arranged in series, the two first detection sections are respectively wound on the two magnetic resistance units, and the magnetic field directions of the two corresponding first induction magnetic fields are opposite;
The second detection sections are arranged in series, two of the second detection sections are respectively wound on two of the magnetic resistance units, and the magnetic field directions of the two second induction magnetic fields generated correspondingly are opposite.
6. The current sensor of claim 1, wherein at least one of the magnetoresistive cells comprises a plurality of magnetic tunnel junction cells disposed in parallel, each of the magnetic tunnel junction cells comprising a plurality of magnetic tunnel junctions in series in turn.
7. The current sensor of claim 6, wherein the sense line is disposed around a perimeter of each of the magnetic tunnel junctions.
8. The current sensor of claim 6, wherein the sense line is wound around a perimeter of an array of a plurality of the magnetic tunnel junction cells.
9. The current sensor of claim 1, wherein the detection line is disposed in the same plane as a top electrode of each of the magnetoresistive cells.
10. An electronic device comprising a current sensor as claimed in any one of claims 1 to 9.
11. A detection device comprising a current sensor as claimed in any one of claims 1 to 9.
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| EP2304447B1 (en) * | 2008-07-22 | 2016-06-29 | ABB Research Ltd. | Magnetoresistive sensor arrangement for current measurement |
| CN102226836A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip bridge magnetic field sensor and preparation method thereof |
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