CN114465496A - Intelligent power module and household electrical appliance - Google Patents

Abstract

The application discloses intelligent power module and household electrical appliance. This intelligent power module includes: an upper bridge power switch tube; the lower bridge power switch tube is connected with the upper bridge power switch tube in series; the lower bridge driving chip is used for converting a lower bridge input driving signal input from the outside into a lower bridge output driving signal output to the lower bridge power switching tube and further performing boost conversion on an upper bridge input driving signal input from the outside to form an intermediate driving signal; and the upper bridge driving chip is used for converting the intermediate driving signal input from the lower bridge driving chip into an upper bridge output driving signal output to the upper bridge power switching tube. Through the mode, the area of the intelligent power module can be reduced, the packaging volume of the intelligent power module is reduced, the integration level of the intelligent power module is improved, and the cost can be reduced.

Description

Intelligent power module and household electrical appliance

Technical Field

The present application relates to the field of electronic technologies, and in particular, to an intelligent power module and a home appliance.

Background

An Intelligent Power Module (IPM) is an advanced Power switch device, and is a Power driving product integrating a Power device and a driving circuit chip thereof. The IPM has a wide market in the fields of variable frequency speed regulation of alternating current motors, chopping speed regulation of direct current motors, various high-performance power supplies (such as UPS, induction heating, electric welding machines, active compensation, DC-DC and the like), industrial electric automation, new energy and the like.

The inventor of the present application found in long-term research and development work that the isolation between the high-voltage side and the low-voltage side of the driving chip can be eliminated when the high-voltage side ground of the driving chip is at the same potential as the emitter of the corresponding power device in the existing IPM.

Disclosure of Invention

The technical problem that this application mainly solved is how to reduce the area of intelligent power module to reduce its encapsulation volume, improve its integrated level, and reduce cost.

In order to solve the technical problem, the application adopts a technical scheme that: an intelligent power module is provided. This intelligent power module includes: an upper bridge power switch tube; the lower bridge power switch tube is connected with the upper bridge power switch tube in series; the lower bridge driving chip is used for converting a lower bridge input driving signal input from the outside into a lower bridge output driving signal output to the lower bridge power switching tube and further performing boost conversion on an upper bridge input driving signal input from the outside to form an intermediate driving signal; and the upper bridge driving chip is used for converting the intermediate driving signal input from the lower bridge driving chip into an upper bridge output driving signal output to the upper bridge power switching tube.

In order to solve the above technical problem, another technical solution adopted by the present application is: a home appliance is provided. The household appliance equipment comprises the intelligent power module.

The beneficial effects of the embodiment of the application are that: the intelligent power module of the embodiment of the application comprises: the intelligent power module includes: an upper bridge power switch tube; the lower bridge power switch tube is connected with the upper bridge power switch tube in series; the lower bridge driving chip is used for converting a lower bridge input driving signal input from the outside into a lower bridge output driving signal output to the lower bridge power switching tube and further performing boost conversion on an upper bridge input driving signal input from the outside to form an intermediate driving signal; and the upper bridge driving chip is used for converting the intermediate driving signal input from the lower bridge driving chip into an upper bridge output driving signal output to the upper bridge power switching tube. The intelligent power module of the embodiment of the application inputs the upper bridge input drive signal through the lower bridge drive chip, and performs boost conversion on the upper bridge input drive signal, and provides the intermediate drive signal after the boost conversion for the upper bridge drive chip, so that the upper bridge drive chip drives the upper bridge power switch tube. Therefore, the upper bridge driving chip of the embodiment of the application directly obtains the intermediate driving signal after boosting from the lower bridge driving chip, and therefore a low-voltage region does not need to be arranged, so that a high-low voltage isolation structure does not need to be arranged, the area of the upper bridge driving chip and the area of the intelligent power module can be reduced, the packaging volume of the upper bridge driving chip and the area of the intelligent power module are reduced, the integration level of the upper bridge driving chip and the intelligent power module are improved, and the cost can be reduced.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

FIG. 1 is a schematic block diagram of an embodiment of a smart power module of the present application;

FIG. 2 is a schematic structural diagram of an upper bridge driving chip in the smart power module of the embodiment of FIG. 1;

FIG. 3 is a schematic diagram of a circuit structure of an under-voltage protection circuit in the upper bridge driving chip of the embodiment of FIG. 2;

FIG. 4 is a schematic structural diagram of a lower bridge driving chip in the intelligent power module in the embodiment of FIG. 1;

FIG. 5 is a schematic diagram of a circuit structure of a pulse generating circuit in the lower bridge driving chip of the embodiment of FIG. 4;

FIG. 6 is a schematic circuit diagram of a level shift circuit in the lower bridge driving chip of the embodiment of FIG. 4;

FIG. 7 is a schematic block diagram of an embodiment of a smart power module of the present application;

fig. 8 is a schematic structural diagram of an embodiment of a home appliance according to the present application.

Detailed Description

The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive step are within the scope of the present application.

The present application first provides an intelligent power module, as shown in fig. 1 to 4, fig. 1 is a schematic structural diagram of an embodiment of the intelligent power module of the present application; FIG. 2 is a schematic structural diagram of an upper bridge driving chip in the smart power module of the embodiment of FIG. 1; FIG. 3 is a schematic diagram of a circuit structure of an under-voltage protection circuit in the upper bridge driving chip of the embodiment of FIG. 2; FIG. 4 is a schematic structural diagram of a lower bridge driving chip in the intelligent power module in the embodiment of FIG. 1; FIG. 5 is a schematic diagram of a circuit structure of a pulse generating circuit in the lower bridge driver chip of the embodiment in FIG. 4; fig. 6 is a schematic circuit structure diagram of a level shift circuit in the lower bridge driving chip of the embodiment of fig. 4. The smart power module 10 of the present embodiment includes: an upper bridge power switch tube 301, a lower bridge power switch tube 302, a lower bridge driving chip 402 and an upper bridge driving chip 401; wherein, the lower bridge power switch tube 302 is connected in series with the upper bridge power switch tube 301; the lower bridge driving chip 402 is configured to convert an externally input lower bridge input driving signal into a lower bridge output driving signal output to the lower bridge power switching tube 302, and further perform voltage boosting conversion on an externally input upper bridge input driving signal to form an intermediate driving signal; the upper bridge driving chip 401 is configured to convert the intermediate driving signal input from the lower bridge driving chip 402 into an upper bridge output driving signal output to the upper bridge power switching transistor 301.

Specifically, the upper bridge driving chip 401 is connected to the gate electrode and the emitter electrode of the upper bridge power switching tube 301, the lower bridge driving chip 402 is connected to the gate electrode and the emitter electrode of the lower bridge power switching tube 302, and the emitter electrode of the upper bridge power switching tube 301 is connected to the collector electrode of the lower bridge power switching tube 302 (i.e., the emitter electrode of the upper bridge power switching tube 301 is connected in series with the lower bridge power switching tube 302).

The upper bridge driving chip 401 is configured to output an upper bridge output driving signal to control the upper bridge power switching tube 301 to be turned on when the intelligent power module 10 operates, and output electric energy from an emitter electrode of the upper bridge power switching tube to a collector electrode of the lower bridge power switching tube 302; when the upper bridge power switch tube 301 is driven to be conducted, a charging current is provided for the upper bridge power switch tube 301, so that the voltage between the gate electrode and the emitting electrode of the upper bridge power switch tube 301 is rapidly increased to a required value, and the upper bridge power switch tube 301 is ensured to be rapidly conducted; and the voltage between the gate electrode and the emitter electrode of the upper bridge power switch tube 301 is ensured to be kept stable during the conduction period of the upper bridge power switch tube 301, so that the upper bridge power switch tube 301 is reliably conducted.

The lower bridge driving chip 402 is configured to output a lower bridge output driving signal when the intelligent power module 10 operates, and control the lower bridge power switching tube 302 to be turned on, so as to output driving electric energy to drive a motor and other loads to operate; when the lower bridge power switch tube 302 is driven to be conducted, a charging current is provided for the lower bridge power switch tube 302, so that the voltage between the gate electrode and the emitting electrode of the lower bridge power switch tube 302 is rapidly increased to a required value, and the lower bridge power switch tube 302 can be ensured to be rapidly conducted; and during the conduction period of the lower bridge power switch tube 302, the voltage between the gate electrode and the emitter electrode of the lower bridge power switch tube 302 is ensured to be maintained stable, so that the lower bridge power switch tube 302 is reliably conducted.

Different from the prior art, the intelligent power module 10 of this embodiment inputs the upper bridge input driving signal through the lower bridge driving chip 402, performs boost conversion on the upper bridge input driving signal, and provides the intermediate driving signal after the boost conversion to the upper bridge driving chip 401, so that the upper bridge driving chip 401 drives the upper bridge power switching tube 301. Therefore, the upper bridge driving chip 401 of this embodiment directly obtains the intermediate driving signal after boosting from the lower bridge driving chip 402, and therefore it is not necessary to set a low voltage region, and it is not necessary to set a high/low voltage isolation structure, and thus the areas of the upper bridge driving chip 401 and the intelligent power module 10 can be reduced, the packaging volume thereof is reduced, the integration level thereof is improved, and the cost can be reduced.

The upper bridge driving chip 401 and the lower bridge driving chip 402 of the present embodiment may be manufactured by a BCD bulk silicon process or a low voltage process to save cost.

Optionally, the inter-driving signal of this embodiment includes a first pulse signal and a second pulse signal, as shown in fig. 2, the upper bridge driving chip 401 of this embodiment includes: a first signal input port SET _1, a second signal input port RESET _1, a pulse synthesis circuit 411, an upper bridge driving circuit 412, and a first signal output port HO.

The first signal input port SET _1 is configured to receive a first pulse signal; the second signal input port RESET _1 is used for receiving a second pulse signal.

The pulse synthesizing circuit 411 is configured to perform a fusion process on the first pulse signal and the second pulse signal to obtain a third pulse signal, where a pulse width of the third pulse signal is greater than a pulse width of the first pulse signal and a pulse width of the second pulse signal.

The pulse synthesizing circuit 411 of the present embodiment may be an or circuit or the like composed of two diodes.

As can be seen from the above analysis, the first pulse signal and the second pulse signal received by the upper bridge driving chip 401 are high-level pulse signals that are subjected to voltage boosting conversion by the lower bridge driving chip 402. Compared to the wide and narrow pulse signals, the narrow and wide pulse signals require less turn-on power for the boost converter circuit (i.e., the level converter circuit in the lower bridge driver chip 402, which will be described later), less power loss, and less requirement for the voltage endurance capability of the boost converter circuit.

The upper bridge driving circuit 412 is configured to generate an upper bridge output driving signal in response to the third pulse signal; the first signal output port HO is used to output the upper bridge output driving signal to the gate electrode of the upper bridge power switch tube 301. The upper bridge driver circuit 412 may be an integrated gate drive resistor.

The upper bridge driving circuit 412 of this embodiment may be a power amplifying circuit, such as a triode, and the power amplifying circuit is configured to amplify the third pulse signal, so as to meet the driving power requirement of the upper bridge power switching tube 301.

Optionally, as shown in fig. 2, the upper bridge driving chip 401 of this embodiment further includes: a first power supply port VB and a first potential port VS; the first power supply port VB is used for providing a first power supply voltage for the upper bridge driving chip 401; the first potential port VS is used for connecting with the transmitting electrode of the upper bridge power switch tube 301.

Optionally, as shown in fig. 2, the upper bridge driving chip 401 of this embodiment further includes: undervoltage protection circuit 413, undervoltage protection circuit 413 are used for monitoring upper bridge supply voltage, when appearing undervoltage, when the power supply is not enough promptly, start protection. .

The undervoltage protection circuit 413 of the present embodiment can be implemented by using the circuit shown in fig. 3. Specifically, when the voltage value input by the first power supply port VB is normal, the power supply voltage sampling circuit collects voltage higher than the reference potential, the comparator outputs low level, and the circuit works normally. The reference point is provided by a zener diode or other voltage generating circuit. When the voltage value input by the first power supply port VB is lower than the lowest allowed voltage value, the power supply voltage sampling circuit collects the voltage which is lower than the reference potential, the comparator outputs high level, and the upper bridge drive stops working. .

Further, in this embodiment, the first signal output port HO of the upper bridge driving chip 401 is disposed close to the gate electrode of the upper bridge power switching tube 301, so that the spatial physical distance between the first signal output port HO and the gate electrode can be shortened, and the parasitic parameter introduced by the lead between the first signal output port HO and the gate electrode can be reduced, so as to reduce the influence of the parasitic parameter on the intelligent power module 10; in this embodiment, the first signal input port SET _1, the second signal input port RESET _1, and the first power supply port VB of the upper bridge driving chip 401 are disposed on the same side, and the first signal input port SET _1 and the second signal input port RESET _1 are disposed near the lower bridge driving chip (not shown), so that an external signal is introduced conveniently, and a circuit structure is simplified.

In this embodiment, the first potential port VS of the upper bridge driving chip 401 and the emitter electrode of the upper bridge power switch tube 301 have the same potential, and the two may be connected through a lead.

Optionally, as shown in fig. 4, the lower bridge driving chip 402 of this embodiment includes: the third signal input port LIN, the preprocessing circuit 422, the pulse generating circuit 423, the level converting circuit 424, the second signal output port SET _0, the third signal output port RESET _0 and the fourth signal output port LO are used for outputting a lower bridge output driving signal; the third signal input port HIN is used for receiving an upper bridge driving input signal; the fourth signal input port LIN is used for receiving a lower bridge driving input signal; the preprocessing circuit 422 is configured to preprocess the upper bridge driving input signal to obtain a fourth pulse signal; the pulse generating circuit 423 is used for generating a first pulse signal and a second pulse signal in response to the fourth pulse signal; the level conversion circuit 424 is connected to the pulse generation circuit, and is configured to perform voltage boosting conversion on the first pulse signal and the second pulse signal, respectively; the second signal output port SET _0 is connected to a first signal input port SET _1 of an upper bridge driving chip (not shown), and is configured to output a first pulse signal to the first signal input port SET _ 1; the third signal output port RESET _0 is connected with a second signal input port RESET _1 of the upper bridge driving chip and used for outputting a second pulse signal to the second signal input port RESET _ 1; and a fourth signal output port LO, connected to a gate electrode of the lower bridge power switch (not shown), for outputting the lower bridge output driving signal to the lower bridge power switch.

As can be seen from the above analysis, the wide pulse signal requires a large turn-on power for the level shifter 424, a large power loss, and a high voltage endurance for the level shifter 424. Therefore, in this embodiment, the pulse generating circuit 423 generates two paths of narrow pulse signals (i.e., the first pulse signal and the second pulse signal) from the one path of preprocessed wide pulse signal (i.e., the fourth pulse signal), so that the power consumption of the lower bridge driving chip 402 and the requirement on the voltage endurance capability of the lower bridge driving chip 402 can be reduced.

Specifically, the pulse generating circuit 423 of the present embodiment can be implemented using a circuit as shown in fig. 5. In this embodiment, the preprocessed fourth pulse signal is divided into two pulse signals, one pulse signal is added into the RC delay circuit 501, a delay can be generated when the upper and lower edges of the pulse signal jump each time, the delayed pulse signal and the other pulse signal are subjected to an exclusive nor operation through the exclusive nor gate 502, the fourth pulse signal outputs a short-lived first pulse signal or second pulse signal when jumping each time, and the widths of the first pulse signal and the second pulse signal are determined by the trigger levels of the RC delay circuit 501 and the schmitt trigger 503.

In this embodiment, the schmitt trigger 503 is added to both pulse signals, so that the consistency of level delay can be ensured.

The preprocessing circuit 422 of the present embodiment includes a schmitt circuit, a filter circuit, a dead-zone interlock circuit, and the like.

Optionally, as shown in fig. 4, the lower bridge driving chip 402 of this embodiment further includes: the fault protection circuit comprises a fault output port F0, an overcurrent detection port ITRIP, a fault output circuit and a fault protection circuit 480, wherein the fault output circuit and the fault protection circuit 480 are respectively connected with a fault output port F0, the overcurrent detection port ITRIP and a preprocessing circuit 422; the fault output port F0 outputs a fault signal; the overcurrent detection port ITRIP checks the current sample signal of the lower bridge power switch tube 302.

Further, the lower bridge driving chip 402 of the present embodiment further includes: a power supply port VCC, which provides a power supply voltage for the lower bridge driver chip 402, and a potential port VSS, which is connected to logic ground.

In the embodiment, the third signal input port LIN, the fourth signal input port LIN, the second signal output port SET _0, the third signal output port RESET _0, the fault output port F0, the overcurrent detection port ITRIP, the power supply port VCC, and the potential port VSS are arranged on the same side, and the second signal output port SET _0 and the third signal output port RESET _0 are arranged close to the upper bridge driving chip 401, so that signals can be conveniently introduced, and the circuit structure is simplified; the fourth signal output port LO is disposed close to the gate electrode of the lower bridge power transistor 302, which can shorten the distance between the fourth signal output port LO and the gate electrode, and thus can reduce the influence of parasitic parameters generated by the lead between the fourth signal output port LO and the gate electrode on the performance of the smart power module 10.

Fault detection circuits such as under/over voltage, over current, over temperature and the like are arranged in the lower axle driving chip 402 of the embodiment; the fault output port F0 may also be used to input an enable signal.

Alternatively, as shown in fig. 6, the level shifter 424 of the present embodiment includes: a first output switching tube 425 and a second output switching tube 426; the first output switch tube 425 is configured to output a first pulse signal, the first output switch tube 425 includes a first device body region 435, and an output end 445 of the first output switch tube extends out of the first device body region 435 to form a second signal output port SET _ 0; the second output switch tube 426 is configured to output a second pulse signal, the second output switch tube 426 includes a second device body region 436, and an output end 446 of the second output switch tube 426 extends out of the second device body region 436 to form a third signal output port RESET _ 0.

Further, the first output switch tube 425 and the second output switch tube 426 are arranged side by side, the end of the output end 445 of the first output switch tube 425 is provided with a first PAD 455, the end of the output end 446 of the second output switch tube 426 is provided with a second PAD 456, the distance between the first PAD 455 and the second PAD 456 meets a preset condition, the preset condition may be set according to the physical and electrical design rules of the chip, for example, the PAD spacing requirement of the chip packaging bonding process needs to be met, and the distance between the PADs of the chip is required to be greater than 50 micrometers according to the physical and electrical design rules, so that the preset condition may be set to be greater than 50 micrometers. This configuration avoids interference between the first output switching tube 425 and the second output switching tube 426.

The first output switching tube 425 and the second output switching tube 426 of this embodiment may be high voltage NMOS tubes, and the high voltage NMOS tubes include a gate electrode and a drain electrode, wherein the gate electrode is disposed in the device body region, the drain electrode is an output end, and an opening is formed in the gate electrode for accommodating the drain electrode.

In other embodiments, the output power switch tube may also be a PMOS tube or the level shift circuit may also be other boosting circuits.

In this embodiment, the NMOS transistor is used to implement the level shifter 424, which occupies a small area and has a simple process, so as to reduce the area of the lower bridge driver chip 402.

The lower bridge driving chip 402 of this embodiment further includes: and the delay circuit 490 is connected to the preprocessing circuit 422, and is configured to delay the preprocessed lower bridge input driving signal and output the delayed lower bridge input driving signal to the fourth signal output port LO, so as to ensure that the upper bridge driving output signal of the upper bridge driving chip 401 is synchronized with the lower bridge driving output signal of the lower bridge driving chip 402.

Furthermore, the embodiment can also increase the pulse width of the output signal of the high-voltage NMOS and/or increase the filtering time of the filter circuit, so as to reduce the signal interference.

The smart power module 10 of the present embodiment further includes: and a bootstrap diode (not shown), an anode of the bootstrap diode is connected to the power supply port VCC of the lower bridge driving chip 402, and a cathode of the bootstrap diode is connected to the first power supply port VB of the upper bridge driving chip 401. The power supply port VCC is connected to a low-voltage fixed power supply voltage, and the low-voltage fixed power supply is converted into a high-voltage floating power supply voltage through a bootstrap diode D and provides the high-voltage floating power supply voltage for the first power supply port VB.

The number of the bootstrap diodes D is the same as that of the upper bridge driving chips 401, and the bootstrap diodes D are arranged in one-to-one correspondence with the upper bridge driving chips 401.

Of course, in other embodiments, a bootstrap capacitor or the like may also be provided for each upper bridge driver chip.

The intelligent power module has integrated power device and drive circuit chip, FRD and part hold and hinder the device, but current intelligent power module's drive chip, the power switch tube, FRD and part hold and hinder between the device, present "plane" distribution, the overall arrangement needs great size, and adopt independent encapsulation mostly, it is great to lead to the total area of the minimum safe line distance between drive chip and the power switch tube and the shared base plate of each chip and power switch tube, it is longer to lead to being used for electric connection between drive chip and the power switch tube, parasitic parameter (like parasitic inductance) can be introduced to longer lead to, parasitic parameter can lead to intelligent power module's switching loss, ringing and reliability scheduling problem.

In order to solve the above technical problem, the present application further provides another embodiment of an intelligent power module, as shown in fig. 7, an upper bridge driving chip 401 of the intelligent power module 10 of this embodiment is stacked on a transmitting electrode (not shown) of an upper bridge power switching tube 301, and the upper bridge driving chip 401 is used for driving the upper bridge power switching tube 301 to operate; the lower bridge driving chip 402 is stacked on a transmitting electrode (not shown) of the lower bridge power switch tube 302, and the lower bridge driving chip 402 is used for driving the lower bridge power switch tube 302.

The upper bridge driving chip 401 of the intelligent power module 10 of this embodiment is stacked on the emitting electrode of the upper bridge power switching tube 301, so that the two are integrally arranged to form a stacked structure, and the mounting position of the upper bridge driving chip 401 can be reduced on the substrate 20, so as to reduce the area of the substrate 20, further shorten the spatial distance between the two, and reduce the physical connection distance of the lead between the two, thereby reducing the influence of parasitic parameters introduced by the lead between the two on the performance of the intelligent power module 10; meanwhile, because the emitter electrode of the upper bridge power switch tube 301 covers most of the area of the upper bridge power switch tube 301, and the emitter electrode of the upper bridge power switch tube 301 has the same potential as the low potential of the high voltage side of the upper bridge driver chip 401, the upper bridge driver chip 401 is stacked on the emitter electrode of the upper bridge power switch tube 301, so that the relative positions of the upper bridge power switch tube and the upper bridge driver chip can be flexibly adjusted, and the length of the lead between the emitter electrode of the upper bridge power switch tube 301 and the low potential port of the high voltage side of the upper bridge driver chip 401 can be shortened, so as to shorten the physical connection distance of the lead as much as possible. The lower bridge driving chip 402 is stacked on the emitting electrode of the lower bridge power switching tube 302, so that the lower bridge driving chip 402 and the emitting electrode form a stacked structure and are integrally arranged, the mounting position of the lower bridge driving chip 402 can be reduced on the substrate 20, the area of the substrate 20 is reduced, the spatial distance between the lower bridge driving chip and the substrate is further shortened, the physical connection distance of the lead between the lower bridge driving chip and the substrate is reduced, and therefore the influence of parasitic parameters introduced by the lead between the lower bridge driving chip and the substrate on the performance of the intelligent power module 10 can be reduced; meanwhile, because the emitter electrode of the bottom bridge power switch tube 302 covers most of the area of the bottom bridge power switch tube 302, and the emitter electrode of the bottom bridge power switch tube 302 and the low potential of the high voltage side of the bottom bridge driver chip 402 are at the same potential, the bottom bridge driver chip 402 is stacked on the emitter electrode of the bottom bridge power switch tube 302, which not only can flexibly adjust the relative position of the two, but also can shorten the length of the lead between the emitter electrode of the bottom bridge power switch tube 302 and the low potential port of the high voltage side of the bottom bridge driver chip 402, so as to shorten the physical connection distance of the lead as much as possible. Therefore, the present embodiment can reduce the influence of parasitic parameters on the performance of the smart power module 10, and the stacking arrangement can implement 3D packaging of the smart power module, thereby reducing the size of the smart power module 10 and improving the integration thereof.

Further, the substrate 20 of the present embodiment may have a mounting position on one surface. The substrate 20 of this embodiment is a carrier of the power switch and the driving chip, and the substrate 20 may be made of a metal material such as aluminum or aluminum alloy, copper or copper alloy, etc.; the substrate 20 of this embodiment may be a circuit board, and a circuit layer is integrated in the circuit board, and the circuit layer can provide a power circuit, a protection circuit, a control circuit, and the like for the power switch tube and the driving chip. The shape of the substrate 20 of the present embodiment may be determined according to the specific position, number and size of the power switch tubes, and is not limited to the square shape.

In other embodiments, the substrate may also be implemented by using a lead frame or an aluminum nitride ceramic substrate, where the aluminum nitride ceramic substrate includes an insulating layer, a heat dissipation layer, and a circuit layer, the insulating layer is located on a side of the circuit layer away from the power switch tube, and the heat dissipation layer is located on a side of the insulating layer away from the circuit layer. The circuit layer can be a flexible copper-clad layer, and a mounting position for mounting an electronic element of the intelligent power module is formed on the flexible copper-clad layer and can be specifically designed according to a circuit of the intelligent power module; the insulating layer can be made of PI film and other insulating materials.

The power switch tube of the present embodiment may be a gallium nitride (GaN) power switch tube, a Si-based power switch tube, or a SiC-based power switch tube.

Optionally, the driving chip is electrically connected to the emitter electrode and the gate electrode of the corresponding power switch tube through leads (not shown). The lead wire of the embodiment is a metal binding wire to realize the transmission of the electric signal between the driving chip and the power switch tube. The lead of the present embodiment may be an aluminum metal wire, a gold metal wire, a copper metal wire, or the like.

Further, the driving chip and the corresponding power switch tube of the embodiment may be bonded by solder paste or silver paste to realize the fixed connection between the driving chip and the corresponding power switch tube.

Further, the power switch tube of the present embodiment further includes a collector (not shown), and the collector may be connected to a power supply circuit integrated in the substrate or directly connected to an external power supply circuit of the smart power module 10 to provide a power supply voltage for the power switch tube.

Alternatively, as shown in fig. 7, the orthographic projection of the driving chip on the substrate 20 is located inside the orthographic projection of the emitting electrode on the substrate 20. The laminated structure can minimize the physical connection distance of the lead between the driving chip and the transmitting electrode, and can maximally improve the influence of parasitic parameters generated by the lead between the driving chip and the transmitting electrode on the performance of the intelligent power module 10.

Further, the smart power module 10 of the present embodiment further includes: and the fast recovery diodes 201 are arranged in one-to-one correspondence with the power switch tubes, and the fast recovery diodes 201 are connected with the corresponding power switch tubes in an anti-parallel manner.

Specifically, the fast recovery diode 201 is disposed on a surface of the substrate 20 where the power switch tube is disposed, and the substrate 20 carries the fast recovery diode 201; and the fast recovery diode 201 is located at the side of the corresponding power switch tube where the transmitting electrode is located, and because the anode 211 of the fast recovery diode 201 and the transmitting electrode of the corresponding power switch tube have the same potential, the distance of the lead between the two can be shortened, so that the influence of parasitic parameters generated by the lead between the two on the performance of the intelligent power module 10 can be reduced.

The fast recovery diode 201 of this embodiment is a high-power anti-parallel diode, and is used to realize fast turn-off of a corresponding power switch tube. The fast recovery diode 201 of this embodiment may be made of Si material, or the fast recovery diode 201 is implemented by using a schottky diode, which may ensure that the power consumption of the smart power module 10 is low, and may reduce the production cost of the smart power module 10.

The intelligent power module 10 of this embodiment includes 3 upper bridge power switching tubes 301, 3 lower bridge power switching tubes 302, 3 upper bridge driver chips 401, and 3 lower bridge driver chips 402.

The substrate 20 of this embodiment is provided with 12 mounting locations, on which 3 upper bridge power switching transistors 301, 3 lower bridge power switching transistors 302, and 6 fast recovery diodes 201 are respectively mounted. The number and the positions of the fast recovery diodes 201 are arranged in one-to-one correspondence with the power switch tubes.

When the intelligent power module 10 works, the driving chip outputs a corresponding PWM control signal to drive and control the corresponding power switching tube to be turned on/off, so as to output driving electric energy to drive the motor and other loads to work.

In this embodiment, the 3 upper bridge power switching tubes 301 and the lower bridge power switching tubes 302 form a three-phase inverter bridge circuit, wherein each upper bridge power switching tube 301 is connected in series with the corresponding lower bridge power switching tube 302, that is, the emitter of the upper bridge power switching tube 301 is connected to the collector of the lower bridge power switching tube 302; the 3 upper bridge power switch tubes 301 and the lower bridge power switch tubes 302 form 3 series circuits, and respectively drive the three-phase winding U, V, W of the motor.

The inverter circuit composed of the 6 power switching tubes in this embodiment can be applied to electrical equipment such as an inverter power supply, a frequency converter, refrigeration equipment, metallurgical machinery equipment, electric traction equipment, and the like, in particular to variable frequency household appliances such as a washing machine.

According to the power switching tube, each driving chip independently drives one power switching tube, the working state of the power switching tube can be better monitored, and therefore the reliability of the intelligent power module is improved.

Of course, in other embodiments, the smart power module may further include four power switch tubes or eight power switch tubes, etc.

The power switch of the present embodiment may be an Insulated Gate Bipolar Transistor (IGBT). The IGBT is a composite full-control voltage-driven power semiconductor device consisting of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), has the advantages of high input impedance of the MOSFET device and low conduction voltage drop of a power transistor, and has the advantage of low driving power and low saturation voltage drop. In other embodiments, the power switch tube may also be a MOS tube or the like.

The intelligent power module in the embodiment of the application is a semiconductor device which is composed of a high-speed low-power-consumption power switch tube, a gate electrode driver and a corresponding protection circuit, and has the advantages of high current density, low saturation voltage and high voltage resistance of a high-power transistor, and the advantages of high input impedance, high switching frequency and low driving power of a field effect transistor. The intelligent power module is internally integrated with a logic, control, detection and protection circuit, so that the intelligent power module is convenient to use, the volume and development time of the system are reduced, and the reliability of the system is greatly enhanced; the intelligent power module of the embodiment of the application can be used in the fields of household appliances, rail transit, power systems and the like, and is particularly suitable for driving motors of compressors and fans such as air conditioners and refrigerators to work.

The present application further provides a home appliance, as shown in fig. 8, fig. 8 is a schematic structural diagram of an embodiment of the home appliance of the present application. The household electrical appliance 70 of this embodiment includes the intelligent power module 10, wherein the intelligent power module 10 is the intelligent power module 10 of the foregoing embodiment, and details are not described herein.

The embodiment of the application can be used for washing machines, refrigerators or range hoods and the like.

Is different from the prior art: the intelligent power module of the embodiment of the application comprises: the intelligent power module includes: an upper bridge power switch tube; the lower bridge power switch tube is connected with the upper bridge power switch tube in series; the lower bridge driving chip is used for converting a lower bridge input driving signal input from the outside into a lower bridge output driving signal output to the lower bridge power switching tube and further performing boost conversion on an upper bridge input driving signal input from the outside to form an intermediate driving signal; and the upper bridge driving chip is used for converting the intermediate driving signal input from the lower bridge driving chip into an upper bridge output driving signal output to the upper bridge power switching tube. The intelligent power module inputs the upper bridge input driving signal through the lower bridge driving chip, performs boost conversion on the upper bridge input driving signal, and provides the intermediate driving signal after the boost conversion for the upper bridge driving chip so that the upper bridge driving chip drives the upper bridge power switching tube. Therefore, the upper bridge driving chip of the embodiment of the application directly obtains the intermediate driving signal after boosting from the lower bridge driving chip, and therefore a low-voltage region does not need to be arranged, so that a high-low voltage isolation structure does not need to be arranged, the area of the upper bridge driving chip and the area of the intelligent power module can be reduced, the packaging volume of the upper bridge driving chip and the area of the intelligent power module are reduced, the integration level of the upper bridge driving chip and the intelligent power module are improved, and the cost can be reduced.

The above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all equivalent mechanisms or equivalent processes performed by the present application and the contents of the appended drawings, or directly or indirectly applied to other related technical fields, are all included in the scope of the present application.

Claims (10)

1. A smart power module, the smart power module comprising:

an upper bridge power switch tube;

the lower bridge power switch tube is connected with the upper bridge power switch tube in series;

the lower bridge driving chip is used for converting a lower bridge input driving signal input from the outside into a lower bridge output driving signal output to the lower bridge power switching tube and further performing boost conversion on an upper bridge input driving signal input from the outside to form an intermediate driving signal;

and the upper bridge driving chip is used for converting the intermediate driving signal input from the lower bridge driving chip into an upper bridge output driving signal output to the upper bridge power switching tube.

2. The smart power module of claim 1, wherein the upper bridge driving chip is stacked on a transmitting electrode of the upper bridge power switch tube, and the lower bridge driving chip is stacked on a transmitting electrode of the lower bridge power switch tube.

3. The smart power module of claim 1, wherein the intermediate driving signal comprises a first pulse signal and a second pulse signal, and wherein the upper bridge driving chip comprises:

a first signal input port for receiving the first pulse signal;

a second signal input port for receiving the second pulse signal;

the pulse synthesis circuit is used for carrying out fusion processing on the first pulse signal and the second pulse signal to obtain a third pulse signal, wherein the pulse width of the third pulse signal is greater than the pulse width of the first pulse signal and the pulse width of the second pulse signal;

an upper bridge drive circuit for generating the upper bridge output drive signal in response to the third pulse signal;

and the first signal output port is used for outputting the upper bridge output driving signal to the gate electrode of the upper bridge power switch tube.

4. The smart power module as claimed in claim 3, wherein the upper bridge driving chip further comprises an under-voltage protection circuit, the under-voltage protection circuit is configured to perform under-voltage protection on the third pulse signal.

5. The smart power module of claim 3, wherein the upper bridge driver chip further comprises:

the first power supply port is used for providing a first power supply voltage for the upper bridge driving chip;

and the first potential port is used for being connected with a transmitting electrode of the upper bridge power switch tube.

6. The smart power module of claim 1, wherein the under-bridge driver chip comprises:

a third signal input port receiving the upper bridge drive input signal;

a fourth signal input port receiving the under-axle drive input signal;

the preprocessing circuit is used for preprocessing the upper bridge driving input signal to obtain a fourth pulse signal;

a pulse generating circuit generating the first pulse signal and the second pulse signal in response to the fourth pulse signal;

the level conversion circuit is connected with the pulse generation circuit and is used for respectively performing boost conversion on the first pulse signal and the second pulse signal;

a second signal output port for outputting the first pulse signal;

a third signal output port for outputting the second pulse signal;

and the fourth signal output port is used for outputting the lower bridge output driving signal.

7. The smart power module of claim 6, wherein the level shifting circuit comprises:

the first output switch tube is used for outputting the first pulse signal and comprises a first device main body area, and the output end of the first output switch tube extends out of the first device main body area to form the second signal output port;

and the second output switch tube is used for outputting the second pulse signal and comprises a second device main body area, and the output end of the second output switch tube extends out of the second main body device area to form the third signal output port.

8. The intelligent power module according to claim 7, wherein the first output switch tube and the second output switch tube are arranged side by side, a first pad is arranged at an end of an output end of the first output switch tube, a second pad is arranged at an end of an output end of the second output switch tube, and a distance between the first pad and the second pad satisfies a preset condition.

9. The smart power module of claim 6, wherein the under-bridge driver chip further comprises:

a fault output port for outputting a fault signal;

and the overcurrent detection port is used for detecting a current sampling signal of the lower bridge power switch tube.

10. An appliance comprising the smart power module of any one of claims 1 to 9.

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