CN114447002A - Optical detection device - Google Patents

Abstract

The present invention provides a light detection device comprising a transistor and a charge storage element. A transistor includes a gate, a source and a drain. The charge storage element is electrically connected to the transistor and includes an upper electrode and a lower electrode. The source and drain electrodes of the transistor and the lower electrode of the charge storage element are formed by a semiconductor layer.

Description

Light detection device

technical field

The present invention relates to a light detection device, in particular to a light detection device with a transistor and a charge storage element.

Background technique

With the development of photodetection devices, human beings have gradually higher requirements on the quality or performance of photodetection devices. Photodetection devices usually use thin film transistors as switching elements, and the performance of the thin film transistors will affect the performance of the photodetection device. Therefore, how to improve the detection performance of the optical detection device or reduce the manufacturing process or cost has become a topic of concern in the industry today.

SUMMARY OF THE INVENTION

The light detection device of the present disclosure includes a transistor and a charge storage element. A transistor includes a gate, a source and a drain. The charge storage element is electrically connected to the transistor and includes an upper electrode and a lower electrode. The source and drain electrodes of the transistor and the lower electrode of the charge storage element are formed by a semiconductor layer.

In the photodetection device of the present disclosure, the transistor and the charge storage element are implemented with the same semiconductor layer, which helps to reduce the fabrication steps, simplify the structure design and reduce the cost.

Description of drawings

FIG. 1 is a schematic top view of a light detection device according to an embodiment of the disclosure;

2 is a schematic cross-sectional view of the light detection device of FIG. 1 along the line A-B-C-D;

FIG. 3 is a schematic cross-sectional view of an embodiment of the pad PD1 in the photodetection device 100 of FIG. 1 ;

4 is a schematic top view of a light detection device according to another embodiment of the disclosure;

5 is a schematic cross-sectional view of the light detection device of FIG. 4 along the line E-F-G-H;

FIG. 6 is a schematic cross-sectional view of an embodiment of the pad PD1 in the light detection device 200 of FIG. 4;

7 is a schematic cross-sectional view of a light detection device according to another embodiment of the disclosure;

8 is a schematic top view of a light detection device according to another embodiment of the disclosure;

9 is a schematic cross-sectional view of the light detection device of FIG. 8 along the line I-J-K-L;

10 is a schematic cross-sectional view of an embodiment of the pad PD2 in the light detection device 200 of FIG. 8;

FIG. 11 is a schematic partial equivalent circuit diagram of the light detection device of the present disclosure.

Detailed ways

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to refer to the same or like parts.

The present disclosure is described in detail below with reference to specific embodiments and the accompanying drawings, which may be simplified schematic diagrams and elements may not be drawn to scale in order to make the disclosure more clear and understandable. Also, the number and size of each element in the accompanying drawings are for illustration only, and are not intended to limit the scope of the present disclosure.

Certain terms may be used throughout the present disclosure and the appended claims to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may refer to the same elements by different names, and it is not intended herein to distinguish those elements that have the same function but have different names. When the terms "comprising", "including" and/or "having" are used in this specification, they designate the presence of said feature, region, step, operation and/or element, but do not exclude one or more other The presence or addition of features, regions, steps, operations, elements and/or combinations thereof.

When an element such as a layer or region is referred to as being "on" or extending "on" another element (or variations thereof), it can be directly on or extending directly onto the other element, Alternatively, there may also be intervening elements in between. On the other hand, when an element is referred to as being "directly on" another element (or a variation thereof) or extending "directly" onto another element, there are no intervening elements present. Also, when an element is referred to as being "coupled" to another element (or variations thereof), it can be directly connected to the other element or indirectly (eg, electrically connected) to the other element through one or more elements element.

In the text, the terms "about" and "substantially" usually mean within 10%, or within 5%, or within 3%, or within 2%, or within 1%, of a given value or range. or within 0.5%. The quantity given here is an approximate quantity, that is, the meanings of "about" and "substantially" can still be implied if "about" and "substantially" are not specifically stated. Furthermore, the phrase "a range between a first value and a second value" means that the range includes the first value, the second value, and other values therebetween.

It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, layers and/or sections, these elements, layers and/or sections should not be limited by these terms, And these terms are only used to distinguish different elements, layers and/or sections. Thus, a first element, layer and/or section discussed below could be termed a second element, layer and/or section without departing from the teachings of some embodiments of the present disclosure. In addition, for the sake of brevity, terms such as "first" and "second" may not be used in the description to distinguish different elements. Without departing from the scope defined by the appended claims, the recitation of a first element and/or a second element in the claims can be construed as any element recited in the specification.

In the present disclosure, the measurement methods of thickness, length and width can be measured by using an optical microscope, and the thickness can be measured by a cross-sectional image in an electron microscope, but not limited thereto. In addition, any two values or directions used for comparison may have certain errors. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the difference between the first direction and the second direction The angle between them may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art of this disclosure. It is to be understood that these terms, such as those defined in commonly used dictionaries, should be interpreted to have a meaning consistent with the relevant art and the context or context of this disclosure and not in an idealized or overly formal manner Interpretation, unless specifically defined herein.

It should be noted that the technical solutions provided by the different embodiments hereinafter can be replaced, combined or used in combination, so as to constitute another embodiment without violating the spirit of the present disclosure.

FIG. 1 is a schematic top view of a light detection device according to an embodiment of the disclosure. The light detection device 100 includes a substrate SB, and the scanning lines SL, the reading lines RL, and the bias lines CL (bias lines) are disposed on the substrate SB. The detection device 100 may define a plurality of detection units SR1 through a plurality of scan lines SL and a plurality of read lines RL. The substrate SB has a detection area R1 and a peripheral area R2 beside the detection area R1. The detection unit SR1 is disposed on the substrate SB and located in the detection area R1, and the pad PD1 is disposed on the substrate SB and located in the peripheral area R2. For clarity, only one detection unit SR1 and three pads PD1 are shown in FIG. 1 , but not limited thereto. A plurality of detection units SR1 may be disposed on the substrate SB, and the plurality of detection units SR1 may be arranged in an array or distributed in the detection area R1 in other arrangements. In FIG. 1 , the detection unit SR1 of the photodetection device may include a transistor SR1A and a charge storage element SR1B, and the charge storage element SR1B is electrically connected to the transistor SR1A. The transistor SR1A includes a gate 132 , a source 112 and a drain 114 , the charge storage element SR1B includes an upper electrode 150 and a lower electrode 116 , the gate 132 is electrically connected to the scan line SL, and one of the source 112 and the drain 114 is electrically connected To read line RL, the other of source 112 and drain 114 is electrically connected to charge storage element SR1B (eg, lower electrode 116). The charge storage element SR1B (eg, the upper electrode 150 ) can be electrically connected to the bias line CL, but not limited thereto.

FIG. 2 is a schematic cross-sectional view of the light detection device of FIG. 1 along the line A-B-C-D. Specifically, the light detection device 100 includes a plurality of film layers disposed on the substrate SB, and the film layers include a semiconductor layer 110 , an insulating layer 120 , a metal layer 130 , a photosensitive layer 140 , an upper The electrode 150 , the insulating layer 160 , the flat layer 170 , the metal layer 180 and the protective layer 190 , but not limited thereto. In the stacking of the above-mentioned multiple film layers, other layers may be selectively inserted or at least one of the above-mentioned layers may be removed. In addition, the light detection device 100 may optionally include a light conversion layer PC1, and the light conversion layer PC1 may be disposed on the protective layer 190 and cover the substrate SB, but is not limited thereto.

In some embodiments, the semiconductor layer 110 may be disposed on the substrate SB. For example, the semiconductor layer 110 may form the source electrode 112 , the drain electrode 114 , the lower electrode 116 and the channel 118 . In other words, the source electrode 112 and/or the drain electrode 114 of the transistor SR1A and the lower electrode 116 of the charge storage element SR1B are formed by a semiconductor layer 110 . In some embodiments, the transistor SR1A has a channel 118 disposed between the source 112 and the drain 114 , and the channel 118 , the source 112 and the drain 114 are in the same layer as the channel 118 . In some embodiments, the source electrode 112 , the drain electrode 114 , the lower electrode 116 and/or the channel 118 are connected to each other, for example, but not limited thereto. In some embodiments, gate 132 of transistor SR1A is disposed on channel 118 . In other words, the channel 118 may be defined as the portion of the semiconductor layer 110 that overlaps the gate 132 in the direction normal to the substrate SB. As shown in FIG. 2 , the source electrode 112 and the drain electrode 114 may be respectively defined as parts of the semiconductor layer 110 connected to both sides of the channel 118 . The lower electrode 116 may be defined as a portion of the semiconductor layer 110 that overlaps the photosensitive layer 140 in the normal direction of the substrate SB. The lower electrode 116 may be part of the charge storage element SR1B. Channel 118, source 112 and drain 114 may be part of transistor SR1A.

In some embodiments, the material of the semiconductor layer 110 includes a semiconductor material with high carrier mobility, for example including a metal oxide semiconductor or other oxide semiconductors.

In some embodiments, the insulating layer 120 may be disposed on the semiconductor layer 110 and overlap the channel 118 in the normal direction of the substrate SB, but is not limited thereto. In some embodiments, the metal layer 130 may be disposed on the insulating layer 120, and the metal layer 130 may include a gate electrode 132 and/or a scan line SL (as shown in FIG. 1), the gate electrode 132 extending from the scan line SL, for example, and A portion of metal layer 130 overlaps via 118 . In some embodiments, the insulating layer 120 may be disposed between the channel 118 and the gate 132 as an insulating layer for the gate 132 . In some embodiments, the material of the insulating layer 120 includes silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof, but is not limited thereto.

In some embodiments, the metal layer 130 may be patterned into the gate electrode 132 shown in FIG. 1 through a development etching process. The area of the semiconductor layer 110 shielded by the gate 132 is the channel 118 . In some embodiments, the insulating layer 120 and the metal layer 130 can be patterned using the same patterning step or using the same mask. Therefore, in the top-view direction, the outline of the insulating layer 120 may roughly correspond to or be aligned with the outline of the metal layer 130 , but not limited thereto.

In some embodiments, the charge storage element SR1B includes a photosensitive layer 140 , a lower electrode 116 and an upper electrode 150 , the photosensitive layer 140 is disposed on the lower electrode 116 , and the upper electrode 150 is disposed on the photosensitive layer 140 , but not limited thereto. In other words, the photosensitive layer 140 may be disposed between the lower electrode 116 and the upper electrode 150 . In other embodiments (not shown), other layers may be selectively interposed between the photosensitive layer 140 and the lower electrode 116 or between the photosensitive layer 140 and the upper electrode 150 . In some embodiments, the charge storage element SR1B may be disposed adjacent to the transistor SR1A and electrically connected to each other, and the photosensitive layer 140 of the charge storage element SR1B does not overlap the transistor SR1A in the normal direction of the substrate SB, but is not limited thereto. In some embodiments, transistor SR1A (eg, drain 114 ) is electrically connected to charge storage element SR1B (eg, lower electrode 116 ), which may be used to drive charge storage element SR1B. In some embodiments, the detection unit SR1 may selectively include other transistors (not shown).

In some embodiments, the material of the photosensitive layer 140 includes a semiconductor material. In some embodiments, the semiconductor material for forming the photosensitive layer 140 is different from the semiconductor material for forming the semiconductor layer 110 , but not limited thereto. For example, the material of the photosensitive layer 140 includes silicon, germanium, indium gallium arsenide, lead sulfide or other similar semiconductor materials, but is not limited thereto. In some embodiments, the photosensitive layer 140 is used to convert light into current or voltage signals, for example. In some embodiments, the photosensitive layer 140 may include a photodiode. In some embodiments, the photosensitive layer 140 may be formed on the semiconductor layer 110 by a deposition method, such as chemical vapor deposition (CVD). During the process of depositing the photosensitive layer 140 or other subsequent layers, the gas (such as hydrogen or other gases) may affect the semiconductor layer 110 , so that the amount of carriers in the semiconductor layer 110 changes (for example, increases), thereby improving the semiconductor layer 110 conductivity. In detail, whether there are other layers (such as the gate 132 ) shielding different parts of the semiconductor layer 110 may affect the degree to which they are affected by the gas, so the semiconductor layer 110 is not shielded by the gate 132 (that is, not shielded from the gate 132 ) Portions of gate 132 (eg, source 112 , drain 114 , and/or bottom electrode 116 ) that overlap) have a different conductivity than portions shadowed by gate 132 (eg, channel 118 ). For example, the conductivity of the source electrode 112 , the drain electrode 114 and/or the lower electrode 116 may be higher than that of the channel 118 , and the channel 118 has semiconductor properties due to its lower conductivity to realize the function of the channel. Through the influence of the gas in the above-mentioned process environment on the semiconductor characteristics, although the source electrode 112, the drain electrode 114, the lower electrode 116 and the channel 118 are made of the same material of the semiconductor layer, they can be made without additional processing (such as doping The semiconductor layer 110 has different conductive properties under the presence of other components), so that different parts of the semiconductor layer 110 can be used as different components respectively, thereby reducing the process flow or manufacturing cost.

In some embodiments, the material of the upper electrode 150 includes, for example, a transparent conductive material, and the photosensitive layer 140 can receive light passing through the upper electrode 150 and generate photoelectric effect to generate carriers. In some embodiments, when R1A is not turned on, the carriers (electrons, holes) generated by the photoelectric effect in the photosensitive layer 140 can be temporarily stored in the charge storage element SR1B, the photosensitive layer 140 , the upper electrode 150 and the lower The electrodes 116 collectively constitute, for example, the charge storage element SR1B.

In some embodiments, the insulating layer 160 may be disposed on or cover the storage element SR1B (eg, the upper electrode 150 ). In some embodiments, the insulating layer 160 may contact portions of the semiconductor layer 110 that are not shielded by the gate electrode 132 and/or the photosensitive layer 140 , such as the source electrode 112 and the drain electrode 114 . In some embodiments, insulating layer 160 may cover charge storage element SR1B and transistor SR1A. In some embodiments, the planarization layer 170 may be disposed on the insulating layer 160, and the insulating layer 160 may cover the transistor SR1A and the charge storage element SR1B. In some embodiments, the planarization layer 170 can reduce the height difference caused by the transistor SR1A and the charge storage element SR1B, so as to achieve a planarization effect, so as to facilitate the subsequent fabrication of other layers.

In some embodiments, the insulating layer 160 may have a via V1 and/or a via V2 through a patterning process, the location of the via V1 may correspond to or overlap with the upper electrode 150 of the charge storage element SR1B, and the location of the via V2 It may correspond to or overlap with the source 112 of the transistor SR1A. In some embodiments, the planarization layer 170 may have vias V3 and/or V4 through another patterning process, the vias V3 may correspond to or overlap with the vias V1, and the vias V4 may correspond to or overlap with the vias v2. In some embodiments, the size of the via hole V3 may be larger than that of the via hole V1, and the size of the via hole V4 may be larger than that of the via hole V2. In some embodiments, the through hole V1 and the through hole V3 may expose part of the upper electrode 150 , and the exposed part of the upper electrode 150 may be electrically connected to the bias line CL. In some embodiments, the through hole V2 and the through hole V4 can expose a part of the source electrode 112 , and the exposed part of the source electrode 112 can be electrically connected to the read line RL.

Specifically, after the planarization layer 170 is subjected to a patterning process, a metal layer 180 can be disposed on the planarization layer 170 , and the metal layer 180 includes a read line RL and a bias line CL. In some embodiments, the bias line CL may be electrically connected to the upper electrode 150 of the charge storage element SR1B via via V1 and/or via V3, and the read line RL may be electrically connected via via V2 and/or via V4 to the source 112 . In some embodiments, the material of the metal layer 180 and the material of the metal layer 130 may be the same or different. In some embodiments, the metal layer 180 and the metal layer 130 may comprise a single layer or a composite layer. In some embodiments, the protective layer 190 may be disposed on the metal layer 180 to protect the layers disposed under the protective layer 190 . In some embodiments, the materials of the protective layer 190 , the insulating layer 120 and the insulating layer 160 may include silicon oxide, silicon nitride, silicon oxynitride or other similar insulating materials, but are not limited thereto. In some embodiments, the light conversion layer PC1 may be disposed on the protective layer 190, or the light conversion layer PC1 may be disposed on the charge storage element SR1B and/or the transistor SR1A. In some embodiments, in the normal direction of the substrate SB, the light conversion layer PC1 overlaps at least the charge storage element SR1B. In some embodiments, the light conversion layer PC1 may overlap the charge storage element SR1B and/or the transistor SR1A in the normal direction of the substrate SB. In some embodiments, the light conversion layer PC1 may cover the substrate SB. In some embodiments, the light conversion layer PC1 can convert the received light into light of different wavelengths, that is, the light conversion layer PC1 is, for example, a light-to-light conversion layer. For example, the light conversion layer PC1 may include a scintillator, a fluorescent material, a filter material, a quantum dot material, other materials, or a combination of the above, but is not limited thereto. In some embodiments, the material of the light conversion layer PC1 can be selected according to the optical properties of the photosensitive layer 140 in the charge storage element SR1B and the application of the light detection device 100 . For example, the photosensitive layer 140 can generate a photoelectric effect under visible light, and the detection light of the light detection device 100 includes, for example, invisible light (such as X-ray, ultraviolet light, infrared light, etc.), so the light conversion layer PC1 can be selected to convert the invisible light materials into visible light. For example, when applied to X-ray detection, a scintillator can be selected for the light conversion layer PC1, and the scintillator includes cesium iodide (Cesium Iodide; CsI) and gadolinium oxide (Gd2O2S) or other suitable materials, but not limit. In other embodiments, the photosensitive layer 140 can be selected from a material that is more sensitive to a specific wavelength, and the light conversion layer PC1 can be selected from a material that can convert the incident light into the specific wavelength, but it is not limited thereto. In some embodiments, the light detection device is an X-ray detection device. In some embodiments, the photo detection device 100 may omit the light conversion layer PC1, and the photosensitive layer 140 may generate a photoelectric effect on incident light for sensing.

FIG. 3 is a schematic cross-sectional view of an embodiment of the pad PD1 in the photodetection device 100 of FIG. 1 . The pads PD1 shown in FIG. 1 and FIG. 3 are disposed in the peripheral region R2 , and the pads PD1 can be used to connect to external circuits, such as driving circuits. The driving circuit includes, but is not limited to, a flexible circuit board, a rigid circuit board, or a chip (IC). In some embodiments, the pad PD1 may include the sub-portion 134 provided on the insulating layer 120 , the sub-portion 182 provided on the sub-portion 134 , and/or the connection portion 180 ′ provided on the sub-portion 182 , but not limited to this. FIG. 3 illustrates a pad structure formed by stacking three conductive layers, but it is not limited thereto. In some embodiments, one of the above-mentioned sub-sections may be selectively removed from the pad PD1, or other sub-sections may be inserted into the above-mentioned sub-sections.

In some embodiments, subsection 134 may be part of metal layer 130 . In some embodiments, the sub-sections 134 , the scan lines SL and/or the gates 132 may be obtained by patterning the same metal material layer, but not limited thereto. In some embodiments, subsection 182 may be part of metal layer 180 . In some embodiments, the subsection 182, the bias line CL and/or the read line RL may be obtained by patterning the same metal material layer, but not limited thereto. In some embodiments, the sub-portion 134 may be disposed on the insulating layer 120, the insulating layer 160 may be disposed between the sub-portion 134 and the sub-portion 182, and the connecting portion 180', for example, is in contact with the sub-portion 182 for electrical connection. In some embodiments, the protective layer 190 is disposed on the sub-portion 182 and the connecting portion 180'. In some embodiments, the insulating layer 160 may have a through hole V5 that may expose a portion of the sub-portion 134 , and the sub-portion 182 and/or the connecting portion 180 ′ may be disposed in the through hole V5 of the insulating layer 160 , so that the Subsection 134 and subsection 182 are electrically connected to each other. In some embodiments, the protective layer 190 has a through hole V6, the through hole V6 may correspond to the through hole V5, and the through hole V6 may expose a part of the connecting portion 180', so that the conduction member (not shown) of the external circuit can be It is in contact with the connecting portion 180 ′ exposed by the through hole V6 to be electrically connected. In some embodiments, the above-mentioned light conversion layer PC1 is not overlapped with the pad PD1, for example, and the pad PD1 can be exposed to be electrically connected to an external circuit (not shown).

In some embodiments, as shown in FIGS. 1 and 2 , the photodetection device 100 includes a transistor SR1A and a charge storage element SR1B, and the source 112 and drain 114 of the transistor SR1A and the lower electrode 116 of the charge storage element SR1B are formed by The semiconductor layer 110 is formed. In some embodiments, the source electrode 112 , the drain electrode 114 , the lower electrode 116 and the channel 118 of the light sensing element 100 can be patterned using the same mask, which helps to simplify the structure of the light sensing device 100 and the manufacturing process. Or reduce the number of photomasks used, thereby saving production costs.

FIG. 4 is a schematic top view of a light detection device according to another embodiment of the disclosure, and FIG. 5 is a schematic cross-sectional view of the light detection device of FIG. 4 taken along the line E-F-G-H. In FIGS. 4 and 5 , the light detection device 200 is similar to the light detection device 100 shown in FIGS. 1 and 2 , and the same reference numerals in the two embodiments are used to denote the same components. The main difference between the optical detection device 200 and the optical detection device 100 is that the optical detection device 200 further includes an insulating layer 260 (as shown in FIG. 5 ). It may be partially located between the photosensitive layer 140 and the semiconductor layer 110 (the lower electrode 116 ). The insulating layer 260 can be patterned to have a through hole V7, the through hole V7 can expose part of the semiconductor layer 110 (the lower electrode 116), and the photosensitive layer 140 can be partially disposed in the through hole V7 in contact with the lower electrode 116 to electrically connect.

In detail, the film layers constituting the light detection device 200 include a semiconductor layer 110, an insulating layer 120, a metal layer 130, an insulating layer 260, a photosensitive layer 140, an upper electrode 150, an insulating layer 160, a flat layer 170, a metal layer 180 and/ or the protective layer 190, but not limited thereto. For the arrangement relationship, function, material, characteristic, etc. of the above-mentioned layers, reference may be made to the description of the foregoing embodiments and will not be repeated. The light detection device 200 in FIG. 5 omits the aforementioned light conversion layer PC1, and the light detection device 200 may selectively include the light conversion layer PC1.

The photodetection device 200 is similar to the photodetection device 100 , the source electrode 112 , the drain electrode 114 , the lower electrode 116 and the channel 118 can be formed by the semiconductor layer 110 , and the source electrode 112 , the drain electrode 114 , the lower electrode 116 and the channel 118 are defined The method is as above.

In some embodiments, the insulating layer 260 of the light detection device 200 may cover the gate electrode 132 and/or part of the semiconductor layer 110 , and the insulating layer 260 may be fabricated after fabricating the gate electrode 132 and before fabricating the photosensitive layer 140 , but not limited thereto . In detail, after the gate 132 (and the metal layer 130 ) is fabricated, the insulating layer 260 may be formed, and the insulating layer 260 may be patterned so that the insulating layer 260 has the via V7 and/or the via V8 . After that, the photosensitive layer 140 and the upper electrode 150 are sequentially formed on the lower electrode 116 to complete the charge storage element SR1B. The photosensitive layer 140 is electrically connected to the lower electrode 116 through the via V7, for example. Next, the insulating layer 160 , the flat layer 170 , the metal layer 180 and/or the protective layer 190 are formed on the substrate SB to complete the light detection device 200 , but not limited thereto. In some embodiments, since the insulating layer 260 is disposed between the metal layer 130 and the photosensitive layer 140 , the insulating layer 260 can cover most of the semiconductor layer 110 , so that in the process of fabricating the photosensitive layer 140 , the metal layer 130 and most of the The semiconductor layer 110 is protected by being covered by the insulating layer 260 , which helps to reduce damage to the metal layer 130 and/or the semiconductor layer 110 and improve the fabrication yield.

FIG. 6 is a schematic cross-sectional view of an embodiment of the pad PD1 in the photodetection device 200 of FIG. 4 . The pads PD1 shown in FIGS. 4 and 6 are disposed in the peripheral region R2. The pad PD1 in the photodetection device 200 is similar in structure to the pad PD1 in the photodetection device 100 , and the difference is that an insulating layer 260 and an insulating layer can be provided between the sub-section 134 and the sub-section 182 of the pad PD1 in the detection device 200 . layer 160 , and the insulating layer 260 may be located between the subsection 134 and the insulating layer 160 . In some embodiments, the insulating layer 260 may have a through hole V9. The through hole V9 may substantially correspond to or overlap with the through hole V5 in the insulating layer 160. The through hole V9 and the through hole V5 may expose a part of the sub-portion 134. The portion 182 may be disposed in the via V5 and the via V9 to be electrically connected to the sub-portion 134 . In some embodiments, the through holes V9 of the insulating layer 260 and the through holes V5 of the insulating layer 160 may be formed in the same patterning process, for example, using the same masking process, but not limited thereto. In some embodiments, the sides of the through holes V9 and the sides of the through holes V5 may be substantially flush, but not limited thereto.

7 is a schematic cross-sectional view of a light detection device according to another embodiment of the disclosure. The light detection device 300 of FIG. 7 is substantially the same as the light detection device 200 of FIG. In FIG. 7 , the insulating layer 360 may not have the through hole V7 like the insulating layer 260 in FIG. 5 , so the photosensitive layer 140 and the lower electrode 116 are separated from each other by the insulating layer 360 and are not in contact with each other. In this way, the upper electrode 150 , the photosensitive layer 140 , the insulating layer 360 and the lower electrode 116 may form a metal oxide semi-tunneling diode (MIS) structure, but not limited thereto.

FIG. 8 is a schematic top view of a light detection device according to another embodiment of the disclosure. In FIG. 8 , the photodetection device 400 includes a detection unit SR2 and a pad PD2 . The detection unit SR2 is disposed on the substrate SB and located in the detection area R1 , and the pad PD2 is disposed on the substrate SB and located in the peripheral area R2 . For clarity, only one detection unit SR2 and three pads PD2 are shown in FIG. 8 , but not limited thereto. In FIG. 8, the detection unit SR2 may include a transistor SR2A and a charge storage element SR2B.

FIG. 9 is a schematic cross-sectional view of the light detection device of FIG. 8 taken along the line I-J-K-L. Specifically, the light detection device 400 includes a plurality of film layers disposed on the substrate SB, and the plurality of film layers include the semiconductor layer 110, the insulating layer 120, the metal layer 130, the insulating layer 440, the upper Electrodes 450 , metal layers 460 , insulating layers 470 , planarization layers 480 , a plurality of first electrodes 490 (eg, charge collection electrodes), a plurality of light conversion layers PC2 , and/or a plurality of second electrodes 491 . In some embodiments, the first electrode 490, the light conversion layer PC2 and the second electrode 491, for example, form a light conversion element LCE.

It should be understood that FIG. 8 and FIG. 9 only show one detection unit SR2, and this detection unit SR2 includes a light conversion element LCE, but is not limited to this, and other detection units may also include the corresponding light conversion element LCE. . In some embodiments, the light conversion elements LCE in different detection units SR2 have respective first electrodes 490 and are connected to each other, for example, the light conversion layers PC2 of the light conversion elements LCE in different detection units SR2 are formed by being connected to each other, for example Integral, for example, the second electrodes 491 of the light conversion elements LCE in different detection units SR2 are connected to each other to form an integral body, but not limited to this.

In other words, the second electrodes 491 are formed by, for example, a non-patterned conductive layer, and the non-patterned conductive layer may correspond to or be located in the plurality of detection units SR2. The light conversion layers PC2 are formed of, for example, an unpatterned light conversion material layer, and the unpatterned light conversion material layer may correspond to or be located in the plurality of detection units SR2. In some embodiments, light converting element LCE may overlap charge storage element SR2B. In some embodiments, the material of the light conversion layer PC2 (or the light conversion material layer) includes a photoconductor such as amorphous selenium (a-Se), but is not limited thereto. In some embodiments, the light conversion layer PC2 (or the light conversion material layer) is formed by, for example, evaporation, but is not limited thereto. It should be noted that the light conversion layer PC2 and/or the second electrode 491 in the light conversion element LCE are omitted in FIG. 8 . In some embodiments, the second electrode 491 includes a transparent conductive layer so that light can pass through the second electrode 491 to be received by the light conversion layer PC2. The operation of the light conversion element LCE will be described later. The structure of the transistor SR2A of the light detection device 400 is substantially similar to that of the transistor SR1A. The source electrode 112 , the drain electrode 114 , the lower electrode 116 and the channel 118 of the light detection device 400 may be formed by the semiconductor layer 110 . The gate 132, the channel 118, the source 112 and the drain 114 may constitute the transistor SR2A. The structures, materials, fabrication methods, and arrangement relationships of the semiconductor layer 110 , the insulating layer 120 , and the metal layer 130 may refer to the foregoing embodiments, and will not be repeated here.

In some embodiments, the insulating layer 440 may cover the gate 132 and a portion of the semiconductor layer 110 . The insulating layer 440 may be patterned to have vias V10 and/or vias V11. The through hole V10 may correspond to the drain electrode 114 of the semiconductor layer 110, and the through hole V11 may correspond to the source electrode 112 of the semiconductor layer 110, but not limited thereto. Through the through holes V10 and V11, at least a part of the source electrode 112 and at least a part of the drain electrode 114 are not covered by the insulating layer 440, so that other layers can pass through the through holes V10 and V11 and the source electrode 112 and the source electrode 112 and The drain 114 is electrically connected. In some embodiments, the upper electrode 450 of the charge storage element SR2B may be disposed on the insulating layer 440, and in the normal direction of the substrate SB, the upper electrode 450 may overlap the lower electrode 116 of the charge storage element SR2B. The charge storage element SR2B includes a lower electrode 116 (a part of the semiconductor layer 110 ), an upper electrode 450 and an insulating layer 440 . The insulating layer 440 may be disposed between the upper electrode 450 and the lower electrode 116 and connect the upper electrode 450 and the lower electrode 116 to each other. In this way, the insulating layer 440 is disposed between the upper electrode 450 and the lower electrode 116 to form a capacitance structure, and the capacitance structure serves as the charge storage element SR2B, but is not limited to this. In this embodiment, the lower electrode 116 is defined as, for example, A portion of the semiconductor layer 110 overlapping the upper electrode 450 . In some embodiments, the material of the insulating layer 440 includes silicon oxide, silicon nitride, silicon oxynitride or a combination thereof, but is not limited thereto. The material of the insulating layer 440 may be determined according to the required charge storage capacity of the charge storage element SR2B. In some embodiments, the metal layer 460 may include a bias line CL disposed on the upper electrode 450 and a read line RL disposed on the source electrode 112 . The bias lines CL may contact the upper electrodes 450 to be electrically connected to each other, or the bias lines CL may contact the upper electrodes 450 without via holes. The read line RL may be provided in the through hole V11 of the insulating layer 440 to be electrically connected to the source electrode 112 .

In some embodiments, the insulating layer 470 may be disposed or covered on the metal layer 460 , the upper electrode 450 and the insulating layer 440 . The insulating layer 470 may be patterned to have vias V12. The through hole V12 may substantially correspond to or overlap with the through hole V10 in the insulating layer 440 . The through hole V12 and the through hole V10 may expose part of the semiconductor layer 110 (eg, the drain electrode 114 ), so that the first electrode 490 and the semiconductor layer 110 may be exposed. (eg drain 114) is electrically connected.

In some embodiments, the material of insulating layer 470 may be the same as or different from the material of insulating layer 440 . In some embodiments, the planarization layer 480 is disposed on the insulating layer 470 to reduce the height difference caused by the transistor SR2A and the charge storage element SR2B to achieve planarization. The flat layer 480 may have a via V13, which may substantially correspond to or overlap with the via V10 and/or the via V12. In some embodiments, the vias V13 may be smaller in size than vias V10 and V12, and a portion of the planarization layer 480 may be located in vias V10 and/or V12, for example, but not limited thereto. In some embodiments, the via V10 and the via V12 may be formed through the same patterning process, but not limited thereto.

In some embodiments, the first electrode 490 is disposed on the flat layer 480 , and the first electrode 490 is electrically connected to the drain electrode 114 through the via V13 , the via V12 and/or the via V10 . In some embodiments, the material of the first electrode 490 may include a transparent conductive material, but is not limited thereto.

In some embodiments, the first electrode 490 , the light conversion layer PC2 and the second electrode 491 as described above, for example, form the light conversion element LCE. The first electrode 490 may be disposed in one detection unit SR2 and electrically connected to the corresponding transistor SR2A and/or the charge storage element SR2B. In some embodiments, an electric field is generated by applying different voltages to the first electrode 490 and the second electrode 491 of the light conversion element LCE, so that the light conversion layer PC2 converts the received light into carriers (electrons, holes) , since the first electrode 490 is electrically connected to the semiconductor layer 110 , for example, the first electrode 490 is electrically connected to the semiconductor layer 110 via the via V13 , the via V12 and/or the via V10 , so these carriers can be electrically connected via, for example, the first electrode 490 And the semiconductor layer 110 is transferred to the corresponding charge storage element SR2B for temporary storage, but not limited to this. In addition, since the drain 114 of the transistor SR2A is electrically connected to the lower electrode 116 of the charge storage element SR2B, when the transistor SR2A is turned on, the carriers temporarily stored in the charge storage element SR2B can be read through the read line RL, thereby realizing The role of light detection, but not limited to this.

FIG. 10 is a schematic cross-sectional view of an embodiment of the pad PD2 in the photodetection device 200 of FIG. 8 . The pads PD2 shown in FIG. 8 and FIG. 10 are disposed in the peripheral region R2 and can be used to connect to external circuits, such as driving circuits. The pad PD2 may include the sub-portion 134 , the sub-portion 462 and the connection portion 492 . The sub-portion 462 is provided on the sub-portion 134 , and the connecting portion 492 is provided on the sub-portion 462 and is in contact with the sub-portion 462 to be electrically connected to each other. FIG. 10 illustrates a pad structure formed by stacking three conductive layers, but it is not limited thereto. In some embodiments, one of subsection 134 and subsection 462 may be omitted, or other subsections may be inserted into such subsections.

In some embodiments, subsection 134 is part of metal layer 130 . In some embodiments, the sub-sections 134 , the scan lines SL and/or the gates 132 may be obtained by patterning the same metal material layer, but not limited thereto. In some embodiments, subsection 462 is part of metal layer 460 . In some embodiments, the subsection 462, the bias line CL and/or the read line RL may be obtained by patterning the same metal material layer, but not limited thereto. In some embodiments, the connection portion 492 may be the same layer as the first electrode 490 in FIG. 9 , that is, the connection portion 492 and the first electrode 490 in FIG. 9 have the same material or may be fabricated in the same fabrication step. In some embodiments, the sub-portion 134 is disposed on the insulating layer 120, the insulating layer 440 is disposed between the sub-portion 134 and the sub-portion 462, the insulating layer 440 may have a through hole V14, and the through hole V14 may expose part of the sub-portion 134, the sub-portion 462 may be disposed in the through hole V14 in contact with the sub-portion 134 for electrical connection. In some embodiments, the insulating layer 470 is disposed between the sub-portion 462 and the connecting portion 492 , and the insulating layer 470 has a through hole V15 that can expose part of the sub-portion 462 , and the connecting portion 492 can be disposed in the through hole V15 is in contact with subsection 462 for electrical connection. In some embodiments, the light conversion layer PC2 and/or the second electrode 491 are not overlapped with the pad PD2, for example, so that the pad PD2 can be exposed for electrical connection with an external circuit (not shown).

The photodetection device 400 shown in FIGS. 8 and 9 includes a transistor SR2A and a charge storage element SR2B. The source electrode 112 and the drain electrode 114 of the transistor SR2A and the lower electrode 116 of the charge storage element SR2B are formed by the semiconductor layer 110 . The channel 118 , the source 112 and the drain 114 of the transistor SR2A are in the same layer. Therefore, different parts of the single-layer semiconductor layer 110 can be respectively used for various components, which facilitates the simplification of the structure, the reduction of the manufacturing steps, or the reduction of the manufacturing cost.

FIG. 11 is a schematic partial equivalent circuit diagram of the light detection device of the present disclosure. As shown in FIG. 11 , the equivalent circuit diagram can be, for example, a simple equivalent circuit diagram of the light detection device 400 , and the actual equivalent circuit may be connected to other electronic components (such as transistors, capacitors, but not limited to) according to requirements. this). For example, the detection unit SR2 of the photodetection device 400 may include a transistor SR2A and a charge storage element SR2B, and the charge storage element SR2B is electrically connected to the transistor SR2A. The gate 132 of the transistor SR2A is electrically connected to the scan line SL, one of the source 112 and the drain 114 is electrically connected to the read line RL, and the other of the source 112 and the drain 114 is electrically connected to the charge storage element SR2B. The charge storage element SR2B may be electrically connected to the bias line CL, but not limited thereto. In the photodetection device 400, since the charge storage element SR2B (refer to FIG. 9) with a capacitance structure is included, the photodetection device 400 further includes, for example, a light conversion element LCE, which is connected to, for example, the transistor SR2A and/or the charge storage element. SR2B. In addition, for another embodiment (not shown), in the case of the photodetection device 100 (as shown in FIG. 1 ), the detection unit SR2 in FIG. 11 can be replaced by the detection unit SR1 , the charge storage element SR2B can be replaced by the charge storage element SR1B, However, it should be noted that the light conversion element LCE as shown in FIG. 11 may not be required in the light detection device 100 .

To sum up, in the photodetection device of the present disclosure, the transistor and the charge storage element are implemented with the same semiconductor layer, which helps to reduce the fabrication steps, simplify the structure design and reduce the cost.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technical solutions described in the foregoing embodiments can still be modified, or some or all of the technical features thereof can be equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention. scope.

Claims (10)

1. A light detection device, comprising:

a transistor including a gate, a source, and a drain; and

a charge storage element electrically connected to the transistor and including an upper electrode and a lower electrode;

wherein the source and drain of the transistor and a lower electrode of the charge storage element are formed from a semiconductor layer.

2. The light detecting device of claim 1, wherein the transistor comprises a channel disposed between the source and the drain, wherein the channel, the source and the drain are in the same layer.

3. The light detection device of claim 2, wherein the gate is disposed on the channel.

4. The light detection device according to claim 1, wherein a material of the semiconductor layer includes a metal oxide.

5. The light detection device of claim 1, wherein the light detection device is an X-ray detection device.

6. The photodetection device according to claim 1, wherein the charge storage element comprises a photosensitive layer which is provided between the lower electrode and the upper electrode, and a material of the photosensitive layer is different from that of the semiconductor layer.

7. The photodetection device according to claim 6, characterized in that the material of the photosensitive layer comprises a semiconductor material of silicon, germanium, indium gallium arsenide, lead sulfide.

8. The light detecting device according to claim 1, wherein the source, the drain, and a lower electrode of the charge storage element are connected to each other.

9. The light detecting device according to claim 1, wherein the charge storage element includes an insulating layer provided between the upper electrode and the lower electrode.

10. The light detecting device according to claim 1, further comprising a light conversion layer provided on the charge storage element and overlapping the charge storage element.

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