CN114442423B - A mask defect detection system - Google Patents
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- CN114442423B CN114442423B CN202210009610.2A CN202210009610A CN114442423B CN 114442423 B CN114442423 B CN 114442423B CN 202210009610 A CN202210009610 A CN 202210009610A CN 114442423 B CN114442423 B CN 114442423B
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- 230000007547 defect Effects 0.000 title claims abstract description 48
- 238000001514 detection method Methods 0.000 title claims abstract description 41
- 238000005286 illumination Methods 0.000 claims abstract description 97
- 210000001747 pupil Anatomy 0.000 claims abstract description 55
- 238000007493 shaping process Methods 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 31
- 238000005516 engineering process Methods 0.000 description 23
- 239000003574 free electron Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 238000001444 catalytic combustion detection Methods 0.000 description 7
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 5
- 230000004075 alteration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- General Physics & Mathematics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention relates to a mask defect detection system which comprises a vacuum cavity and a vibration isolation platform, wherein the vacuum cavity is positioned above the vibration isolation platform, the system further comprises a laser used as a system light source for generating laser, a beam shaping system used for shaping the laser, a decoherence reflector used for implementing decoherence on the laser, a pupil conversion wheel used for pupil selection, a zone plate used for imaging defects on a mask, a flange used for implementing sealing connection between the cavities, a four-claw slit used for fine tuning the size of an illumination light spot, and the decoherence reflector, the pupil conversion wheel and the zone plate are positioned in the vacuum cavity, wherein the laser generated by the laser sequentially passes through the beam shaping system, the flange, the four-claw slit, the decoherence reflector and the pupil conversion wheel, and irradiates the mask to perform mask defect detection.
Description
Technical Field
The present disclosure relates to the field of mask defect inspection technology, and more particularly, to a mask defect inspection system.
Background
EUV lithography is the most promising technology to meet the 7nm and below technology node. In the semiconductor manufacturing process, the EUV mask technology is considered as one of the most critical technologies whether EUV lithography can be successfully implemented and developed. Since extreme ultraviolet light is strongly absorbed by most materials, reflective optical elements, including masks, must be used in the light path. Thus, EUV masks, unlike conventional photolithographic masks, employ a multi-layer film structure. The EUV mask fabrication process is very complex, each process step inevitably introduces defects, which directly affect the yield of the lithography process and must be tightly controlled. EUV mask defects are one of the most significant challenges associated with EUV mask fabrication today. Thus, EUV mask defect inspection technology is a key technology for EUV mask fabrication without defects and for EUV lithography mass production.
With the development of EUV lithography, EUV mask defect detection technology has received more and more attention from scientific research institutions at home and abroad. EUV mask defect detection must be carried out by adopting wavelength detection, and four types of wavelength EUV mask defect detection technologies, namely Schwarzschild-based two-mirror imaging technology and projection objective imaging technology which are oriented to mass production, and a scientific research-oriented coherent diffraction imaging technology and a zone plate imaging technology are mainly adopted internationally at present. The imaging light path of the zone plate imaging technology is simple, the cost is low, the high-resolution EUV Mask defect detection can be realized, and the problem faced in the EUV Mask research and development process can be studied only by reproducing all existing and future EUV lithography machine illumination conditions, such as Mask architecture and material research, optical proximity correction and auxiliary feature pattern research, influence of multilayer film roughness on lithography pattern roughness, influence of high NA, large-angle multilayer film research, source-Mask collaborative optimization and the like. It is with these incomparable advantages that mask defect detection techniques based on zone plate imaging play an important role in EUV mask development from the beginning of production.
The main research institution of EUV mask defect detection technology based on zone plate imaging is the national laboratory of lorensberk, usa. The illumination light source is a synchronous radiation light source, the illumination system adopts a Fourier synthesis illumination technology to realize the free control of an illumination pupil, so that the illumination pupil condition of the photoetching machine is reproduced, and the resolution of the imaging system is improved. However, the fourier synthesis illumination technology needs to adopt an MEMS mirror MA to perform two-dimensional scanning, the scanning speed and the precision are very high, and the control of illumination light is realized by combining a plane mirror MB and an ellipsoidal focusing mirror MC. All three optical elements need to be coated in the euv band and the roughness requirements reach sub-nanometer level, so that the manufacturing is very difficult and expensive. In addition, the illumination mode has extremely high adjustment difficulty, can meet the requirement of a dipole mode illumination pupil, but can hardly meet the requirement of quadra even more complex illumination pupils, thus limiting the imaging resolution of the whole system.
Disclosure of Invention
The mask defect detection system aims to solve the technical problems that a mask defect detection system in the prior art is high in cost and extremely high in adjustment difficulty, and cannot meet the requirements of users on more complex illumination pupils.
In order to achieve the technical purpose, the present disclosure provides a mask defect detection system, which comprises a vacuum cavity and a vibration isolation platform, wherein the vacuum cavity is positioned above the vibration isolation platform, and further comprises:
the laser is used as a system light source to generate laser;
A beam shaping system for beam shaping the laser;
the decoherence reflector is used for realizing decoherence of the laser;
A pupil conversion wheel for pupil selection;
the zone plate is used for imaging the defects on the mask;
The flange is used for realizing the sealing connection between the cavities;
The decoherence reflector, the pupil conversion wheel and the zone plate are positioned in the vacuum cavity;
laser generated by the laser sequentially passes through the beam shaping system, the flange, the decoherence reflector and the pupil conversion wheel, and irradiates on a mask to detect mask defects.
Further, the beam shaping system adopts a KB mirror, and the size of an illumination light spot after being shaped by the KB mirror is 100-300 um.
Further, the method further comprises the following steps:
the four-claw slit is positioned between the flange and the decoherence reflector and is used for fine adjustment of the spot size of the light after the light beam shaping;
after passing through the flange, the laser generated by the laser passes through the four-claw slit to be injected into the decoherence reflector.
The knife edge of the four-jaw slit can move in two-dimensional directions and is used for fine adjustment of the size of the shaped illumination light spot, so that the appropriate light spot size is selected for different scenes.
Further, the reflecting surface of the decoherence reflector is provided with a sub reflecting surface in a periodical step or groove shape.
The main purpose is to divide the incident light spot into a plurality of sub-light spots, so that the optical path difference of the adjacent light spots is larger than the coherence length, thereby achieving the purpose of decoherence.
Further, the decoherence mirror sets a decoherence reflection angle so that the laser light irradiates the mask to be inspected at an illumination incident angle of not less than 6 °.
Further, the decoherence reflecting mirror is a plane mirror or a spherical mirror.
The spatial coherence of the laser is very high, and the illumination of high coherence can produce speckle on the imaging surface, affecting the imaging resolution of the system. Fourier synthesis illumination is a decoherence technical scheme, and different illumination pupils can be scanned at the same time, but the processing and adjustment difficulty of the adopted MEMS mirror is extremely high. The device adopts a decoherence reflector to decoherence the output light of the laser. The decoherence reflector can be a plane mirror, only the direction of the light path is changed without changing the size of the light spot, and also can be a spherical mirror, and the focusing effect can be achieved while the direction of the light path is changed. Different mirror surface types can be selected according to actual requirements.
Further, the device also comprises a swinging table;
The decoherence mirror is arranged on the swinging table.
The swinging table can swing at a high speed at a small angle, so that the uniformity of the reflection light spots can be effectively improved, and the influence of the non-uniformity of the illumination light spots on the detection performance of the system is avoided.
Further, the pupil-switching wheel is circular or square.
Further, the zone plate is a bright field zone plate or a dark field zone plate.
Further, the pupil switching wheel has conventional illumination, annular illumination, vertical dipole illumination, horizontal dipole illumination, quadrupole illumination, asymmetric quadrupole illumination pupil switching aperture.
The beneficial effects of the present disclosure are:
the mask inspection system of the present disclosure has, as compared to the prior art:
The illumination light source of the mask detection system is preferably extreme ultraviolet light output by a free electron laser, and is characterized by very high brightness, incomparable with other DPP and LPP light sources, high brightness, capability of improving the signal-to-noise ratio of the system, capability of obtaining higher resolution and capability of greatly improving the defect detection rate of the system.
The free electron laser can realize very high monochromaticity on the premise of ensuring high brightness, which is incomparable with other DPP and LPP light sources, the monochromaticity is high, the influence of chromatic aberration of the zone plate on imaging resolution can be effectively avoided, and the zone plate with the number corresponding to the monochromaticity can be adopted to obtain larger zone plate focal length so as to greatly reduce the adjustment difficulty of the zone plate.
The device has the technical effects of (1) low cost, low manufacturing difficulty, (3) simple light path adjustment, (4) high imaging resolution and (5) high defect detection rate.
Drawings
FIG. 1 shows a schematic diagram of a mask inspection system according to a first embodiment of the present disclosure;
FIG. 2 shows a schematic view of a reflecting surface of a decoherence mirror according to a first embodiment of the present disclosure;
FIG. 3 shows a schematic view b of a reflecting surface of a decoherence mirror according to a first embodiment of the present disclosure;
FIG. 4 shows a pupil translation wheel schematic of a first embodiment of the present disclosure;
fig. 5 shows a pupil-converting wheel schematic of a first embodiment of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
Embodiment one:
As shown in fig. 1:
the present disclosure provides a mask defect detection system, comprising a vacuum cavity and a vibration isolation platform, wherein the vacuum cavity is positioned above the vibration isolation platform, and further comprising:
further comprises:
a laser for generating laser light for the input system;
A beam shaping system 1 for beam shaping the laser light of the input system;
a decoherence mirror 2 for decoherence of the laser light generated by the laser;
a pupil-switching wheel 3 for pupil selection;
a zone plate 5 for imaging defects on the mask;
a flange 9 for effecting a sealed connection between the chambers;
A four-jaw slit 10 for fine-tuning the size of the illumination spot;
the decoherence reflector 2, the pupil conversion wheel 3 and the zone plate 5 are positioned in the vacuum cavity;
laser generated by the laser sequentially passes through the beam shaping system 1, the flange 9, the four-claw slit 10, the decoherence mirror 2 and the pupil conversion wheel 3, and irradiates on a mask 4 for mask defect detection.
The laser is preferably a free electron laser.
The illumination light source of the mask detection system is preferably extreme ultraviolet light output by a free electron laser, and is characterized by very high brightness, incomparable with other DPP and LPP light sources, high brightness, capability of improving the signal-to-noise ratio of the system, capability of obtaining higher resolution and capability of greatly improving the defect detection rate of the system.
The free electron laser can realize very high monochromaticity on the premise of ensuring high brightness, which is incomparable with other DPP and LPP light sources, the monochromaticity is high, the influence of chromatic aberration of the zone plate on imaging resolution can be effectively avoided, and the zone plate with the number corresponding to the monochromaticity can be adopted to obtain larger zone plate focal length so as to greatly reduce the adjustment difficulty of the zone plate.
Further, the beam shaping system adopts a KB mirror, and the size of an illumination light spot after being shaped by the KB mirror is 100-300 um.
Further, the method further comprises the following steps:
four-jaw slits for fine-tuning the spot size of the beam-shaped light;
the four-claw slit is positioned between the flange and the decoherence reflector;
the illumination light generated by the laser is emitted into the decoherence reflector after passing through the flange and the four-claw slit.
The knife edge of the four-jaw slit can move in two-dimensional directions and is used for fine adjustment of the size of the shaped illumination light spot, so that the appropriate light spot size is selected for different scenes.
Further, the reflecting surface of the decoherence reflector is provided with a sub reflecting surface in a periodical step or groove shape.
The main purpose is to divide the incident light spot into a plurality of sub-light spots, so that the optical path difference of the adjacent light spots is larger than the coherence length, thereby achieving the purpose of decoherence.
Further, the decoherence mirror sets a decoherence reflection angle so that the laser light irradiates the mask to be inspected at an illumination incident angle of not less than 6 °.
Further, the decoherence reflecting mirror is a plane mirror or a spherical mirror.
The spatial coherence of the laser is very high, and the illumination of high coherence can produce speckle on the imaging surface, affecting the imaging resolution of the system. Fourier synthesis illumination is a decoherence technical scheme, and different illumination pupils can be scanned at the same time, but the processing and adjustment difficulty of the adopted MEMS mirror is extremely high. The device adopts a decoherence reflector to decoherence the output light of the laser. The decoherence reflector can be a plane mirror, only the direction of the light path is changed without changing the size of the light spot, and also can be a spherical mirror, and the focusing effect can be achieved while the direction of the light path is changed. Different mirror surface types can be selected according to actual requirements.
Further, the device also comprises a swinging table;
The decoherence mirror is arranged on the swinging table.
The swinging table can swing at a high speed at a small angle, so that the uniformity of the reflection light spots can be effectively improved, and the influence of the non-uniformity of the illumination light spots on the detection performance of the system is avoided.
Further, the pupil-switching wheel is circular or square.
Further, the zone plate is a bright field zone plate or a dark field zone plate.
The traditional scheme only uses the zone plate to image the reflected light, and belongs to bright field detection. The zone plate in the mask defect detection system of the present disclosure may be a zone plate for bright field detection, or may be a zone plate for imaging scattered light, i.e., for dark field detection.
Further, the pupil switching wheel has conventional illumination, annular illumination, vertical dipole illumination, horizontal dipole illumination, quadrupole illumination, asymmetric quadrupole illumination pupil switching aperture.
The mask defect detection system of the present disclosure is described in detail below with reference to fig. 1 to 5:
An EUV mask defect detection system based on free electron laser and zone plate imaging is used for detecting defects of an EUV mask and researching key technology in the EUV mask research and development process. The light path diagram of the device is shown in fig. 1. The device has the working principle that the illumination light source is extreme ultraviolet light output by a free electron laser, is characterized by very high brightness, is incomparable with other DPP and LPP light sources, has high brightness, can improve the signal-to-noise ratio of a system, and can greatly improve the defect detection rate of the system while obtaining higher resolution. The free electron laser can realize very high monochromaticity on the premise of ensuring high brightness, which is incomparable with other DPP and LPP light sources, the monochromaticity is high, the influence of chromatic aberration of the zone plate on imaging resolution can be effectively avoided, and the zone plate with the number corresponding to the monochromaticity can be adopted to obtain larger zone plate focal length so as to greatly reduce the adjustment difficulty of the zone plate.
The extreme ultraviolet light output by the free electronic laser forms an illumination light spot with a required size after passing through the beam shaping system 1, the shaping system can adopt a KB mirror or other forms, the size of the illumination light spot after shaping is recommended to be 100-300 um, the illumination light after shaping enters the vacuum cavity 7 of the device through the flange opening 9 and the four-jaw slit 10, the four-jaw slit 10 is arranged between the flange 9 and the vacuum cavity 7, the knife edge of the four-jaw slit can move in two-dimensional directions and is used for fine-adjusting the size of the illumination light spot after shaping, and therefore, the proper light spot size is selected for different scenes. The illumination light spot passes through the four-jaw slit and irradiates the decoherence mirror 2 with a required light spot size. It should be noted that the spatial coherence of free electron lasers is very high, and the illumination of high coherence can create speckle on the imaging surface, affecting the imaging resolution of the system. Fourier synthesis illumination is a decoherence technical scheme, and different illumination pupils can be scanned at the same time, but the processing and adjustment difficulty of the adopted MEMS mirror is extremely high. The device adopts a decoherence reflector to decoherence the output light of the free electron laser. The decoherence reflector can be a plane mirror, only the direction of the light path is changed without changing the size of the light spot, and also can be a spherical mirror, and the focusing effect can be achieved while the direction of the light path is changed. Different mirror surface types can be selected according to actual requirements.
The method mainly aims to divide an incident light spot into a plurality of sub-light spots so that the optical path difference of adjacent light spots is larger than the coherence length, thereby achieving the purpose of decoherence. The illumination light spot is reflected after being irradiated to the reflecting mirror 2, and the reflected light does not have the original high coherence, so that the imaging resolution of the system is not affected by the scattered light on the imaging surface.
The mirror 2 needs to be set at a specific angle to ensure that the reflected light is able to impinge on the mask 4 at an angle of incidence of 6, which is the angle of illumination currently employed by EUV lithography machines. The illumination angle of future EUV lithography machines will increase, so the mirror 2 needs to meet an adjustment capability of the mask illumination angle of >6 °.
The reflector 2 can also be arranged on a swinging table, and the swinging table can swing at a high speed at a small angle, so that the uniformity of reflection light spots can be effectively improved, and the influence of non-uniformity of illumination light spots on the detection performance of the system is avoided. The reflected light passing through the mirror 2 needs to pass through the pupil-converting wheel 3 before impinging on the mask 4, for pupil selection of the illumination light. The different illumination pupils determine different diffraction resolution limits, e.g. the diffraction limit resolution with dipole illumination is doubled over with coherent illumination. Thus, to increase the resolution of the system, a complex illumination pupil is required. In the prior art, an illumination system adopts Fourier synthesis illumination to realize free control of an illumination pupil, so that the illumination pupil condition of the photoetching machine is reproduced, and the imaging resolution is improved. However, the fourier synthesis illumination technology needs to adopt an MEMS mirror to perform two-dimensional scanning, so that the requirements on scanning speed and precision are high, the manufacturing cost is high, the processing difficulty is very high, the adjustment difficulty is very high, and the fourier synthesis illumination technology is difficult to be applied to a complex illumination pupil.
The application adopts a very simple and flexible pupil conversion wheel mode to carry out pupil control, and the pupil conversion wheel can be understood as a traditional slit or small aperture diaphragm, and only the light transmission area of the pupil conversion wheel is designed into the shapes corresponding to various illumination pupils, as shown in fig. 4 and 5.
The pupil conversion wheel can be round or square, various illumination pupil shapes are prepared on the pupil conversion wheel by means of electron beam lithography or laser direct writing, and the light passing area is white in fig. 4 and corresponds to the various illumination pupil shapes. The pupil shape can be switched on the light path by rotating the round switching wheel or horizontally moving the square switching wheel, the processing cost of the switching wheel is low, the service life of the switching wheel is longer than that of the MEMS reflector, the cost waste caused by damage of the optical reflector can be greatly reduced, the installation and adjustment are simple, the additional light path installation and adjustment are not needed for switching different pupil shapes, the difficulty of light path installation and adjustment can be greatly reduced, and the time is saved.
The pupil shape commonly used mainly comprises conventional illumination a1, annular illumination a2, vertical bipolar illumination a3, horizontal bipolar illumination a4, quadrupole illumination a5, asymmetric quadrupole illumination a6 and the like, wherein the conventional illumination a1 refers to that laser directly passes through a circular through hole of a pupil, and the preparation of any pupil shape can be met by the current micro-nano processing technology, so that even if the mask illumination collaborative optimization technology of fire heat is studied in the current photoetching field, the required very complex illumination intensity distribution can be prepared on a pupil conversion wheel by the micro-nano processing technology.
Another advantage of using a pupil-shifting wheel is that the energy of the illumination spot can be attenuated, the energy of the illumination light of the free electron laser is very high, and the saturation effect of the CCD is easily caused after the illumination light reaches the CCD through the imaging system, and an effective image cannot be obtained. The energy of the illumination light can be properly attenuated through the pupil conversion wheel, which is beneficial to reducing the saturation effect of the CCD. The illumination light spot irradiates the mask 4 with a required light spot size, a required incidence angle and a required illumination pupil after passing through the pupil conversion wheel 3, and the reflected light is received by the zone plate 5 after being reflected by the mask 4. The zone plate 5 may image reflected light by a bright field zone plate or scattered light by a dark field zone plate. Either the reflected or scattered light carries the defect information on the mask and is received by the CCD 6 after imaging through the zone plate.
In the prior art, because the energy of the illumination light source is relatively weak, the signal to noise ratio of imaging is low, and only EUV CCD can be used. The present disclosure employs free electron lasers as illumination sources, which are much more energetic than other forms of light sources, so that scintillator-based visible light CCDs can be employed. This can greatly reduce the cost of the device. The defect information on the EUV mask can be accurately obtained after the image obtained by the CCD is processed by the defect extraction algorithm. EUV mask defect detection at wavelengths that must be used in a vacuum environment or that will be absorbed very quickly by air requires the use of extreme ultraviolet light, and therefore the present apparatus requires a vacuum chamber to provide a vacuum environment, typically requiring a vacuum level of better than 10 "6 hPa. The EUV mask defect inspection apparatus has very strict vibration requirements on the system, and the relative vibration displacement of the mask and zone plate cannot exceed 5nm, so that vibration isolation is required for the whole apparatus, the apparatus is required to be placed on the vibration isolation platform 8, and the vibration isolation platform is required to provide 90% vibration isolation when 2Hz is required to be satisfied.
The embodiments of the present disclosure are described above. These examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
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| CN117348338B (en) * | 2023-10-08 | 2024-06-28 | 中山大学 | Mask defect detection device and method |
| CN117890382A (en) * | 2023-12-25 | 2024-04-16 | 中国科学院上海高等研究院 | EUV mask defect detection and analysis integrated system based on synchronous light source |
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| US6849363B2 (en) * | 1997-06-27 | 2005-02-01 | Kabushiki Kaisha Toshiba | Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device |
| JP6211270B2 (en) * | 2009-06-19 | 2017-10-11 | ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ | Inspection system and method for defect detection of extreme ultraviolet mask blanks |
| DE102013202949A1 (en) * | 2013-02-22 | 2014-05-08 | Carl Zeiss Smt Gmbh | Illumination device for projection exposure system i.e. EUV projection exposure system, has light source passing light to field mirror and pupil mirror, and field mirror formed in different positions and light regions of pupil mirror |
| CN113433709A (en) * | 2021-06-21 | 2021-09-24 | 山西大学 | Laser beam splitting decoherence device based on optical dielectric film |
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