CN114390415A - MEMS microphone structure and manufacturing method thereof - Google Patents
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- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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Abstract
Description
技术领域technical field
本发明属于麦克风技术领域,涉及一种MEMS麦克风结构及其制作方法。The invention belongs to the technical field of microphones, and relates to a MEMS microphone structure and a manufacturing method thereof.
背景技术Background technique
现今的智能手机和智能音箱中使用的都是用MEMS(Micro-Electro-MechanicalSystem,微机电系统)技术制造的麦克风。这种麦克风具有体积小、功耗低、性能优异、一致性好、便于装配等特点。MEMS麦克风的核心部件是一层可以往复振动的柔性振膜。振膜的柔性程度和振膜内应力均会影响麦克风的最终性能。Today's smart phones and smart speakers use microphones manufactured with MEMS (Micro-Electro-Mechanical System, Micro-Electro-Mechanical System) technology. This microphone has the characteristics of small size, low power consumption, excellent performance, good consistency, and easy assembly. The core component of a MEMS microphone is a flexible diaphragm that can vibrate back and forth. Both the flexibility of the diaphragm and the stress within the diaphragm will affect the final performance of the microphone.
发明内容SUMMARY OF THE INVENTION
鉴于以上所述现有技术的缺点,本发明的目的在于提供一种MEMS麦克风结构及其制作方法,用于解决现有技术中MEMS麦克风的振膜不够柔软、振膜内应力高的问题。In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a MEMS microphone structure and a manufacturing method thereof, which are used to solve the problems that the diaphragm of the MEMS microphone is not soft enough and the internal stress of the diaphragm is high in the prior art.
为实现上述目的及其他相关目的,本发明提供一种MEMS麦克风结构,包括:In order to achieve the above purpose and other related purposes, the present invention provides a MEMS microphone structure, including:
基板,所述基板中设有在垂直方向上贯穿所述基板的空腔;a substrate, wherein the substrate is provided with a cavity penetrating the substrate in a vertical direction;
振膜,悬设于所述空腔上方,所述振膜包括折叠结构,所述折叠结构在垂直方向上来回弯折;a diaphragm, suspended above the cavity, the diaphragm includes a folded structure, and the folded structure is bent back and forth in a vertical direction;
支架,连接于所述振膜与所述基板之间,且所述折叠结构与所述振膜的中心之间的距离小于所述支架与所述振膜的中心之间的距离。A bracket is connected between the diaphragm and the base plate, and the distance between the folded structure and the center of the diaphragm is smaller than the distance between the bracket and the center of the diaphragm.
可选地,所述折叠结构呈直角弯折。Optionally, the folding structure is bent at a right angle.
可选地,所述折叠结构的底面低于所述振膜除所述折叠结构以外的区域的底面。Optionally, the bottom surface of the folded structure is lower than the bottom surface of the area of the diaphragm other than the folded structure.
可选地,所述振膜包括在水平方向上由内而外依次设置的2-10个所述折叠结构。Optionally, the diaphragm includes 2-10 of the folded structures arranged in sequence from the inside to the outside in the horizontal direction.
可选地,所述折叠结构呈连续的环状或断续的环状。Optionally, the folded structure is in the form of a continuous ring or an intermittent ring.
可选地,所述环状包括圆环或多边形环。Optionally, the ring shape includes a circular ring or a polygonal ring.
可选地,所述振膜中还设有泄气孔,所述泄气孔在所述基板上的垂直投影位于所述空腔外。Optionally, the diaphragm is further provided with a vent hole, and the vertical projection of the vent hole on the substrate is located outside the cavity.
可选地,所述MEMS麦克风结构还包括背极,所述背极位于所述振膜上方,且所述背极与所述振膜之间具有气隙,所述背极中设有多个在垂直方向上贯穿所述背极的第一声孔,所述第一声孔与所述气隙连通。Optionally, the MEMS microphone structure further includes a back pole, the back pole is located above the vibrating membrane, and there is an air gap between the back pole and the vibrating membrane, and the back pole is provided with a plurality of The first acoustic hole of the back pole penetrates in the vertical direction, and the first acoustic hole communicates with the air gap.
可选地,所述MEMS麦克风结构还包括背板,所述背板与所述基板及所述背极连接,所述背板中设有多个在垂直方向上贯穿所述背板的第二声孔,所述第二声孔与所述第一声孔连通。Optionally, the MEMS microphone structure further includes a back plate, the back plate is connected to the substrate and the back electrode, and the back plate is provided with a plurality of second plates penetrating the back plate in the vertical direction. A sound hole, the second sound hole communicates with the first sound hole.
可选地,所述背板的下表面设有多个阻挡块,所述阻挡块在垂直方向上贯穿所述背极,且所述阻挡块的下表面低于所述背极的下表面。Optionally, the lower surface of the back plate is provided with a plurality of blocking blocks, the blocking blocks penetrate the back pole in the vertical direction, and the lower surface of the blocking blocks is lower than the lower surface of the back pole.
本发明还提供一种MEMS麦克风结构的制作方法,包括以下步骤:The present invention also provides a method for fabricating a MEMS microphone structure, comprising the following steps:
提供一基板,形成第一牺牲层于所述基板上;providing a substrate, and forming a first sacrificial layer on the substrate;
形成凹槽及通槽于所述第一牺牲层中,所述凹槽自所述第一牺牲层上表面开口,并往所述基板方向延伸,但未到达所述基板,所述通槽在垂直方向上贯穿所述第一牺牲层,并在所述第一牺牲层中围出支架;Forming grooves and through grooves in the first sacrificial layer, the grooves are opened from the upper surface of the first sacrificial layer and extend toward the substrate, but do not reach the substrate, and the through grooves are located in the first sacrificial layer. vertically penetrating the first sacrificial layer, and enclosing a bracket in the first sacrificial layer;
形成振膜于所述第一牺牲层上,所述振膜填充进所述凹槽及所述通槽,且所述振膜在所述凹槽所在区域来回弯折以构成折叠结构,所述折叠结构与所述振膜的中心之间的距离小于所述支架与所述振膜的中心之间的距离;A diaphragm is formed on the first sacrificial layer, the diaphragm is filled into the groove and the through groove, and the diaphragm is bent back and forth in the area where the groove is located to form a folded structure, the The distance between the folded structure and the center of the diaphragm is smaller than the distance between the bracket and the center of the diaphragm;
形成空腔于所述基板中,所述空腔在垂直方向上贯穿所述基板;forming a cavity in the substrate, the cavity penetrating the substrate in a vertical direction;
去除所述第一牺牲层的一部分以使所述振膜悬设于所述空腔上方,所述第一牺牲层作为所述支架的部分未被去除。A portion of the first sacrificial layer is removed so that the diaphragm is suspended above the cavity, and the first sacrificial layer is not removed as part of the support.
可选地,所述凹槽的侧壁与底面呈直角,所述折叠结构呈直角弯折。Optionally, the side wall of the groove is at right angles to the bottom surface, and the folding structure is bent at right angles.
可选地,形成在水平方向上由内而外依次设置的2-10个所述凹槽。Optionally, 2-10 of the grooves are formed sequentially from the inside to the outside in the horizontal direction.
可选地,所述凹槽包括连续的环形槽或断续的环形槽。Optionally, the grooves comprise continuous annular grooves or intermittent annular grooves.
可选地,所述环形槽包括圆环形槽或多边环形槽。Optionally, the annular groove includes a circular annular groove or a polygonal annular groove.
可选地,还包括形成泄气孔于所述振膜中的步骤,所述泄气孔在所述基板上的垂直投影位于所述空腔外。Optionally, the method further includes the step of forming a vent hole in the diaphragm, and the vertical projection of the vent hole on the substrate is located outside the cavity.
可选地,还包括以下步骤:Optionally, the following steps are also included:
形成第二牺牲层,所述第二牺牲层位于所述第一牺牲层上并覆盖所述振膜;forming a second sacrificial layer, the second sacrificial layer is located on the first sacrificial layer and covers the diaphragm;
形成背极于所述第二牺牲层上,并形成多个在垂直方向上贯穿所述背极的第一声孔;forming a back electrode on the second sacrificial layer, and forming a plurality of first acoustic holes penetrating the back electrode in a vertical direction;
形成背板,所述背板位于所述基板上并覆盖所述第一牺牲层、所述第二牺牲层及所述背极;forming a backplane, the backplane is located on the substrate and covers the first sacrificial layer, the second sacrificial layer and the back electrode;
形成第二声孔于所述背板中,所述第二声孔在垂直方向上贯穿所述背板并与所述第一声孔连通;forming a second acoustic hole in the back plate, the second acoustic hole penetrates the back plate in a vertical direction and communicates with the first acoustic hole;
去除所述第二牺牲层,得到位于所述背极与所述振膜之间的气隙。The second sacrificial layer is removed to obtain an air gap between the back electrode and the diaphragm.
可选地,还包括以下步骤:Optionally, the following steps are also included:
形成多个阻挡块凹槽于所述第二牺牲层中;forming a plurality of blocking block grooves in the second sacrificial layer;
形成多个在垂直方向上贯穿所述背极的阻挡块通槽,所述阻挡块通槽与所述阻挡块凹槽在垂直方向上相对,所述背板还填充进所述阻挡块通槽及所述阻挡块凹槽以构成阻挡块。forming a plurality of blocking block through grooves that penetrate the back pole in the vertical direction, the blocking block through grooves are opposite to the blocking block grooves in the vertical direction, and the back plate is also filled into the blocking block through grooves and the blocking block groove to form a blocking block.
如上所述,本发明的MEMS麦克风结构及其制作方法中,振膜包括用于增加振膜柔性程度和降低振膜内应力的折叠结构,且所述折叠结构呈直角弯折,当为了达到更好的应力释放效果而增加折叠结构的数量时,相比于弧形结构,本发明能够有效减小折叠区域所占用的振膜面积。As mentioned above, in the MEMS microphone structure and the manufacturing method thereof of the present invention, the diaphragm includes a folded structure for increasing the flexibility of the diaphragm and reducing the internal stress of the diaphragm, and the folded structure is bent at a right angle. When the number of folded structures is increased due to the good stress release effect, the present invention can effectively reduce the area of the diaphragm occupied by the folded regions compared with the arc-shaped structures.
附图说明Description of drawings
图1所示显示为一种MEMS麦克风结构的剖面图。Figure 1 shows a cross-sectional view of a MEMS microphone structure.
图2显示为本发明的MEMS麦克风结构的剖面结构示意图。FIG. 2 is a schematic cross-sectional view of the MEMS microphone structure of the present invention.
图3显示为折叠结构呈连续的正方形环的示意图。Figure 3 shows a schematic representation of the folded structure as a continuous square ring.
图4显示为折叠结构呈断续的正方形环的示意图。Figure 4 shows a schematic representation of a square ring with an interrupted folded structure.
图5显示为折叠结构呈连续的圆环的示意图。Figure 5 shows a schematic view of the folded structure as a continuous ring.
图6显示为折叠结构呈断续的圆环的示意图。Figure 6 shows a schematic view of a ring with an interrupted folded structure.
图7显示为折叠结构呈连续的六边形环的示意图。Figure 7 shows a schematic view of the folded structure as a continuous hexagonal ring.
图8显示为折叠结构呈断续的六边形环的示意图。Figure 8 shows a schematic view of a hexagonal ring with an interrupted folded structure.
图9显示为本发明的MEMS麦克风结构的制作方法形成第一牺牲层于基板上的示意图。FIG. 9 is a schematic diagram of forming a first sacrificial layer on a substrate according to the method for fabricating the MEMS microphone structure of the present invention.
图10显示为本发明的MEMS麦克风结构的制作方法形成凹槽于第一牺牲层中的示意图。FIG. 10 is a schematic diagram of forming a groove in the first sacrificial layer according to the method for fabricating the MEMS microphone structure of the present invention.
图11显示为本发明的MEMS麦克风结构的制作方法形成通槽于第一牺牲层中的示意图。FIG. 11 is a schematic diagram of forming a through groove in the first sacrificial layer according to the method for fabricating the MEMS microphone structure of the present invention.
图12显示为本发明的MEMS麦克风结构的制作方法形成振膜于第一牺牲层上的示意图。FIG. 12 is a schematic diagram of forming a diaphragm on the first sacrificial layer according to the method for fabricating the MEMS microphone structure of the present invention.
图13显示为本发明的MEMS麦克风结构的制作方法形成泄气孔于振膜中,并去除振膜的外围部分的示意图。FIG. 13 is a schematic diagram of forming a vent hole in the diaphragm and removing the peripheral portion of the diaphragm according to the manufacturing method of the MEMS microphone structure of the present invention.
图14显示为本发明的MEMS麦克风结构的制作方法形成第二牺牲层的示意图。FIG. 14 is a schematic diagram illustrating the formation of the second sacrificial layer in the method for fabricating the MEMS microphone structure of the present invention.
图15显示为本发明的MEMS麦克风结构的制作方法形成多个阻挡块凹槽于第二牺牲层中的示意图。FIG. 15 is a schematic diagram of forming a plurality of blocking block grooves in the second sacrificial layer according to the method for fabricating the MEMS microphone structure of the present invention.
图16显示为本发明的MEMS麦克风结构的制作方法去除第一牺牲层及第二牺牲层的外围部分以暴露出基板的示意图。16 is a schematic diagram illustrating the method for fabricating the MEMS microphone structure of the present invention by removing the peripheral portions of the first sacrificial layer and the second sacrificial layer to expose the substrate.
图17显示为本发明的MEMS麦克风结构的制作方法形成背极于第二牺牲层上的示意图。FIG. 17 is a schematic diagram of forming a back electrode on the second sacrificial layer for the fabrication method of the MEMS microphone structure of the present invention.
图18显示为本发明的MEMS麦克风结构的制作方法形成多个在垂直方向上贯穿背极的第一声孔及多个在垂直方向上贯穿背极的阻挡块通槽的示意图。18 is a schematic diagram illustrating the formation of a plurality of first acoustic holes vertically penetrating the back electrode and a plurality of blocking block through-grooves vertically penetrating the back electrode by the method for fabricating the MEMS microphone structure of the present invention.
图19显示为本发明的MEMS麦克风结构的制作方法形成背板的示意图。FIG. 19 shows a schematic diagram of forming a backplane for the method for fabricating the MEMS microphone structure of the present invention.
图20显示为本发明的MEMS麦克风结构的制作方法形成第二声孔于背板中,并去除背板的外围部分的示意图。FIG. 20 is a schematic diagram of forming a second acoustic hole in the backplane and removing the peripheral portion of the backplane for the method of fabricating the MEMS microphone structure of the present invention.
图21显示为本发明的MEMS麦克风结构的制作方法减薄基板的示意图。FIG. 21 is a schematic diagram illustrating the thinning of the substrate by the method for fabricating the MEMS microphone structure of the present invention.
图22显示为本发明的MEMS麦克风结构的制作方法形成空腔于基板中的示意图。FIG. 22 is a schematic diagram of forming a cavity in a substrate according to a method for fabricating a MEMS microphone structure of the present invention.
图23显示为本发明的MEMS麦克风结构的制作方法去除第一牺牲层的一部分以使振膜悬设于空腔上方,并去除第二牺牲层,得到位于背极与振膜之间的气隙的示意图。23 shows the method for fabricating a MEMS microphone structure by removing a part of the first sacrificial layer so that the diaphragm is suspended above the cavity, and removing the second sacrificial layer to obtain an air gap between the back pole and the diaphragm schematic diagram.
元件标号说明Component label description
101 基底101 Substrate
102 支撑结构102 Support structure
103 振膜103 Diaphragm
104 背极104 Back pole
105 背板105 Backplane
106 折叠结构106 Folding structure
201 基板201 Substrate
202 振膜202 Diaphragm
203 支架203 bracket
204 空腔204 cavity
205 折叠结构205 Folding structure
206 泄气孔206 Air vent
207 背极207 Back pole
208 气隙208 Air Gap
209 第一声孔209 First sound hole
210 背板210 Backplane
211 第二声孔211 Second sound hole
212 阻挡块212 Blocks
213 第一牺牲层213 first sacrificial layer
214 凹槽214 groove
215 通槽215 through slot
216 第二牺牲层216 Second sacrificial layer
217 阻挡块凹槽217 Block groove
218 阻挡块通槽218 Block through slot
具体实施方式Detailed ways
以下通过特定的具体实例说明本发明的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
请参阅图1至图23。需要说明的是,本实施例中所提供的图示仅以示意方式说明本发明的基本构想,遂图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可为一种随意的改变,且其组件布局型态也可能更为复杂。See Figures 1 through 23. It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the diagrams only show the components related to the present invention rather than the number, shape and the number of components in the actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.
为了增加振膜的柔性并释放振膜内应力,一些MEMS麦克风的振膜会包括一种折叠结构,其具体形状取决于制造此结构的工艺流程方式。如图1所示,显示为一种MEMS麦克风结构的剖面图,包括基底101、支撑结构102、振膜103、背极104及背板105,该MEMS麦克风结构的振膜103具有折叠结构106,其表现为在振膜103的上表面具有突起的弧形结构,为了达到较好的应力释放效果,若增加这种弧形结构的数量,将会占用较大的振膜面积。本发明将对振膜的折叠结构进行改进,在不占用较多振膜面积的前提下,增加振膜的柔性并释放振膜内应力。下面通过具体的实施例来说明本发明的技术方案。To increase the flexibility of the diaphragm and relieve stress within the diaphragm, the diaphragm of some MEMS microphones includes a folded structure, the exact shape of which depends on the process flow used to manufacture the structure. As shown in FIG. 1, it is a cross-sectional view of a MEMS microphone structure, including a
实施例一Example 1
本实施例中提供一种MEMS麦克风结构,请参阅图2,显示为该MEMS麦克风结构的剖面结构示意图,包括基板201、振膜202及支架203,其中,所述基板201中设有在垂直方向上贯穿所述基板201的空腔204;所述振膜202悬设于所述空腔204上方,所述振膜202包括折叠结构205,所述折叠结构205在垂直方向上来回弯折;所述支架203连接于所述振膜202与所述基板201之间,且所述折叠结构205与所述振膜202的中心之间的距离小于所述支架203与所述振膜202的中心之间的距离。In this embodiment, a MEMS microphone structure is provided. Please refer to FIG. 2 , which is a schematic cross-sectional structure diagram of the MEMS microphone structure, including a
具体的,所述基板201用于为MEMS麦克风结构的形成提供工艺平台,包括但不限于硅基板、锗基板、硅锗基板或碳化硅基板、绝缘体上硅基板或绝缘体上锗基板、玻璃基板或III-V族化合物基板(例如氮化镓基板或砷化镓基板等)。本实施例中,所述基板201以为硅基板为例。所述支架203用于支撑所述振膜202,其材质包括但不限于氧化硅。所述振膜202用于在声音产生的空气压力下振动,其材质包括但不限于多晶硅。Specifically, the
具体的,所述振膜202的所述折叠结构205用于增加振膜柔性程度和降低振膜内应力。本实施例中,所述折叠结构205呈直角弯折,相比于弧形的折叠结构,本发明单个折叠结构占用面积更小。在占用相同振膜面积的情况下,本发明振膜中折叠结构的数量可以更多,能够达到更好的应力释放效果。Specifically, the folded
作为示例,所述折叠结构205在所述基板201上的垂直投影可以位于所述空腔204内,也可以位于所述空腔204外,还可以位于一部分位于所述空腔204内,另一部分位于所述空腔204外,可以根据需要进行调整。As an example, the vertical projection of the folded
作为示例,所述折叠结构205的底面低于所述振膜除所述折叠结构205以外的区域(即非折叠区域)的底面。As an example, the bottom surface of the folded
作为示例,所述折叠结构205可以呈连续的环状或断续的环状,所述环状包括但不限于圆环或多边形环。As an example, the folded
作为示例,请参阅图3至图8,其中,图3显示为所述振膜202的所述折叠结构205呈连续的正方形环的示意图,图4显示为所述振膜202的所述折叠结构205呈断续的正方形环的示意图,图5显示为所述振膜202的所述折叠结构205呈连续的圆环的示意图,图6显示为所述振膜202的所述折叠结构205呈断续的圆环的示意图,图7显示为所述振膜202的所述折叠结构205呈连续的六边形环的示意图,图8显示为所述振膜202的所述折叠结构205呈断续的六边形环的示意图。As an example, please refer to FIGS. 3 to 8 , wherein FIG. 3 shows a schematic diagram of the folded
需要指出的是,在图3至图8中仅在所述振膜202中示出了一个所述折叠结构205,在其它实施例中,所述振膜202也可以包括在水平方向上由内而外依次设置的多个所述折叠结构205,例如可以包括2-10个所述折叠结构205,图2中显示为所述振膜202包括在水平方向上由内而外依次设置的3个所述折叠结构205的情形。It should be noted that only one of the folded
作为示例,所述振膜202中还设有泄气孔206,所述泄气孔206在所述基板201上的垂直投影位于所述空腔204外。所述泄气孔206用于在所述振膜202承受高气压冲击时,将空气通过所述泄气孔206泄放过去,从而降低所述振膜202所需承受的压力。所述泄气孔206的数量和分布可以根据需要进行调整。As an example, the
作为示例,所述MEMS麦克风结构还包括背极207,所述背极207位于所述振膜202上方,且所述背极207与所述振膜202之间具有气隙208,所述背极207中设有多个在垂直方向上贯穿所述背极207的第一声孔209,所述第一声孔209与所述气隙208连通。所述背极207的材质包括但不限于多晶硅。As an example, the MEMS microphone structure further includes a
作为示例,所述MEMS麦克风结构还包括背板210,所述背板210与所述基板201及所述背极207连接,所述背板210中设有多个在垂直方向上贯穿所述背板210的第二声孔211,所述第二声孔211与所述第一声孔209连通。所述背板210的材质包括但不限于氮化硅。As an example, the MEMS microphone structure further includes a
作为示例,所述背板210的下表面设有多个阻挡块212,所述阻挡块212在垂直方向上贯穿所述背极207,且所述阻挡块212的下表面低于所述背极207的下表面,以防止所述振膜202与所述背极207粘附。As an example, the lower surface of the
具体的,所述振膜202、所述气隙208和所述背极207用于构成电容结构,麦克风工作时,声音信号可以经声孔进入电容结构内(所述气隙内),还可以通过所述空腔204进入电容结构,使所述振膜202与所述背极207之间的距离发生改变,从而使所述电容结构的电容值发生相应改变,进而将声音信号转换为电信号。Specifically, the
本实施例的MEMS麦克风结构的振膜包括用于增加振膜柔性程度和降低振膜内应力的折叠结构,且所述折叠结构呈直角弯折,当为了达到更好的应力释放效果而增加折叠结构的数量时,相比于弧形结构,本发明能够有效减小折叠区域所占用的振膜面积。The diaphragm of the MEMS microphone structure of this embodiment includes a folded structure for increasing the flexibility of the diaphragm and reducing the internal stress of the diaphragm, and the folded structure is bent at a right angle. When the folded structure is added to achieve a better stress release effect When the number of structures is increased, compared with the arc structure, the present invention can effectively reduce the area of the diaphragm occupied by the folding area.
实施例二Embodiment 2
本实施例中提供一种MEMS麦克风结构的制作方法,包括以下步骤:The present embodiment provides a method for fabricating a MEMS microphone structure, comprising the following steps:
请参阅图9,提供一基板201,采用化学气相沉积、物理气相沉积或其它合适的方法形成第一牺牲层213于所述基板201上,所述第一牺牲层213的材质包括但不限于二氧化硅。Please refer to FIG. 9 , a
请参阅图10,采用光刻、刻蚀或其它合适的工艺形成凹槽214于所述第一牺牲层213中,所述凹槽214自所述第一牺牲层213上表面开口,并往所述基板201方向延伸,但未到达所述基板201。Referring to FIG. 10 , a
作为示例,所述凹槽214的侧壁与底面呈直角或大致上呈直角(偏差10°以内)。As an example, the sidewalls of the
作为示例,可形成在水平方向上由内而外依次设置的2-10个所述凹槽214,所述凹槽214可以是连续的环形槽、断续的环形槽或其它合适的形状,所述环形槽包括但不限于圆环形槽或多边环形槽。As an example, 2-10
请参阅图11,采用光刻、刻蚀或其它合适的工艺形成通槽215于所述第一牺牲层中,所述通槽215在垂直方向上贯穿所述第一牺牲层213,并在所述第一牺牲层213中围出支架203。Referring to FIG. 11 , a through
请参阅图12,采用化学气相沉积、物理气相沉积或其它合适的方法形成振膜202于所述第一牺牲层213上,所述振膜202填充进所述凹槽214及所述通槽215,且所述振膜202在所述凹槽214所在区域来回弯折以构成折叠结构,所述折叠结构与所述振膜的中心之间的距离小于所述支架203与所述振膜的中心之间的距离。所述振膜202的材质包括但不限于多晶硅。Referring to FIG. 12 , a
需要指出的是,所述振膜202可以部分填满所述凹槽214,也可以全部填满所述凹槽214,但在所述凹槽214所在区域,所述振膜202部分下凹,形成来回弯折的折叠结构205。另外,由于所述凹槽214的侧壁与底面呈直角或大致上呈直角,所述折叠结构205呈下表面边缘为或大致为直角的突起部分,也就是说,所述折叠结构205呈直角弯折。It should be pointed out that the
请参阅图13,采用光刻、刻蚀或其它合适的工艺形成泄气孔206于所述振膜202中,并去除所述振膜202的外围部分。Referring to FIG. 13 , the vent holes 206 are formed in the
请参阅图14,采用化学气相沉积、物理气相沉积或其它合适的方法形成第二牺牲层216,所述第二牺牲层216位于所述第一牺牲层213上并覆盖所述振膜202。所述第二牺牲层216的材质包括但不限于二氧化硅。Referring to FIG. 14 , chemical vapor deposition, physical vapor deposition or other suitable methods are used to form a second
请参阅图15,采用光刻、刻蚀或其它合适的工艺形成多个阻挡块凹槽217于所述第二牺牲层216中。Referring to FIG. 15 , a plurality of blocking
请参阅图16,采用光刻、刻蚀或其它合适的工艺去除所述第一牺牲层213及所述第二牺牲层216的外围部分以暴露出所述基板201。Referring to FIG. 16 , the peripheral portions of the first
请参阅图17,采用化学气相沉积、物理气相沉积或其它合适的方法形成背极207于所述第二牺牲层216上。所述背极207的材质包括但不限于多晶硅。Referring to FIG. 17 , the
请参阅图18,采用光刻、刻蚀或其它合适的工艺形成多个在垂直方向上贯穿所述背极207的第一声孔209及多个在垂直方向上贯穿所述背极207的阻挡块通槽218,所述阻挡块通槽218与所述阻挡块凹槽217在垂直方向上相对。Referring to FIG. 18 , photolithography, etching or other suitable processes are used to form a plurality of first
请参阅图19,采用化学气相沉积、物理气相沉积或其它合适的方法形成背板210,所述背板210位于所述基板201上并覆盖所述第一牺牲层213、所述第二牺牲层216及所述背极;207。所述背板210的材质包括但不限于氮化硅。所述背板210还填充进所述阻挡块通槽218及所述阻挡块凹槽217以构成阻挡块212,以防止所述振膜202释放后在振动时与所述背极207发生粘附。Referring to FIG. 19 , chemical vapor deposition, physical vapor deposition or other suitable methods are used to form a
请参阅图20,采用光刻、刻蚀或其它合适的工艺形成第二声孔211于所述背板210中,并去除所述背板210的外围部分,所述第二声孔211在垂直方向上贯穿所述背板210并与所述第一声孔209连通。Referring to FIG. 20 , a second
请参阅图21,采用化学机械抛光或其它合适的工艺减薄所述基板201。Referring to FIG. 21, the
请参阅图22,采用深反应离子刻蚀(DRIE)或其它合适的工艺形成空腔204于所述基板201中,所述空腔204在垂直方向上贯穿所述基板;所述泄气孔206在所述基板201上的垂直投影位于所述空腔204外。Referring to FIG. 22, deep reactive ion etching (DRIE) or other suitable processes are used to form a
请参阅图23,采用湿法刻蚀或其它合适的工艺去除所述第一牺牲层213的一部分以使所述振膜202悬设于所述空腔204上方,并去除所述第二牺牲层216,得到位于所述背极207与所述振膜202之间的气隙208,其中,所述第一牺牲层213作为所述支架203的部分未被去除。Referring to FIG. 23, wet etching or other suitable process is used to remove a part of the first
至此,制作得到一种MEMS麦克风结构,该MEMS麦克风结构包括具有折叠结构的振膜,可以增加振膜柔性程度和降低振膜内应力,且所述折叠结构呈直角弯折,占用振膜面积较小。So far, a MEMS microphone structure has been produced. The MEMS microphone structure includes a diaphragm with a folded structure, which can increase the flexibility of the diaphragm and reduce the internal stress of the diaphragm, and the folded structure is bent at a right angle and occupies a relatively large area of the diaphragm. Small.
综上所述,本发明的MEMS麦克风结构及其制作方法中,振膜包括用于增加振膜柔性程度和降低振膜内应力的折叠结构,且所述折叠结构呈直角弯折,当为了达到更好的应力释放效果而增加折叠结构的数量时,相比于弧形结构,本发明能够有效减小折叠区域所占用的振膜面积。所以,本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。To sum up, in the MEMS microphone structure and its manufacturing method of the present invention, the diaphragm includes a folded structure for increasing the flexibility of the diaphragm and reducing the internal stress of the diaphragm, and the folded structure is bent at a right angle. When the number of folded structures is increased due to better stress release effect, the present invention can effectively reduce the area of the diaphragm occupied by the folded area compared to the arc-shaped structure. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102244827A (en) * | 2010-05-13 | 2011-11-16 | 欧姆龙株式会社 | Acoustic sensor and microphone |
US20120250897A1 (en) * | 2011-04-02 | 2012-10-04 | Mwm Acoustics, Llc | Dual Cell MEMS Assembly |
CN108650596A (en) * | 2018-06-28 | 2018-10-12 | 歌尔股份有限公司 | A kind of sensitive membrane and sensor |
CN108996466A (en) * | 2017-06-07 | 2018-12-14 | 中芯国际集成电路制造(天津)有限公司 | MEMS device and forming method thereof |
CN109956447A (en) * | 2017-12-25 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
CN210986419U (en) * | 2019-12-27 | 2020-07-10 | 歌尔微电子有限公司 | MEMS microphones and electronic devices |
CN213403499U (en) * | 2020-10-19 | 2021-06-08 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone structure |
-
2020
- 2020-10-19 CN CN202011117387.0A patent/CN114390415A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102244827A (en) * | 2010-05-13 | 2011-11-16 | 欧姆龙株式会社 | Acoustic sensor and microphone |
US20120250897A1 (en) * | 2011-04-02 | 2012-10-04 | Mwm Acoustics, Llc | Dual Cell MEMS Assembly |
CN108996466A (en) * | 2017-06-07 | 2018-12-14 | 中芯国际集成电路制造(天津)有限公司 | MEMS device and forming method thereof |
CN109956447A (en) * | 2017-12-25 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
CN108650596A (en) * | 2018-06-28 | 2018-10-12 | 歌尔股份有限公司 | A kind of sensitive membrane and sensor |
CN210986419U (en) * | 2019-12-27 | 2020-07-10 | 歌尔微电子有限公司 | MEMS microphones and electronic devices |
CN213403499U (en) * | 2020-10-19 | 2021-06-08 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone structure |
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