[go: up one dir, main page]

CN114389585A - High-speed low-offset latch comparator - Google Patents

High-speed low-offset latch comparator Download PDF

Info

Publication number
CN114389585A
CN114389585A CN202210036895.9A CN202210036895A CN114389585A CN 114389585 A CN114389585 A CN 114389585A CN 202210036895 A CN202210036895 A CN 202210036895A CN 114389585 A CN114389585 A CN 114389585A
Authority
CN
China
Prior art keywords
nmos transistor
drain
transistor
gate
pmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210036895.9A
Other languages
Chinese (zh)
Inventor
彭析竹
谢玉龙
唐鹤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN202210036895.9A priority Critical patent/CN114389585A/en
Publication of CN114389585A publication Critical patent/CN114389585A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

本发明属于比较器技术领域,具体涉及一种高速低失调锁存比较器。本发明通过在锁存器中插入交叉耦合电容,并通过引入复位管使得在复位阶段将PMOS管栅极电压复位至地,可以减小比较器的静态失调以及提高锁存器的速度。此外前置预放大器的引入,提供较高的速度、带宽和增益,进一步降低比较器输入失调,同时将输入信号与输出信号隔离,减小回踢噪声,从而实现了一个具有高速低失调的锁存比较器。

Figure 202210036895

The invention belongs to the technical field of comparators, and in particular relates to a high-speed low-offset latch comparator. The invention can reduce the static offset of the comparator and improve the speed of the latch by inserting a cross-coupling capacitor in the latch and introducing a reset transistor to reset the gate voltage of the PMOS transistor to ground in the reset stage. In addition, the introduction of the preamplifier provides higher speed, bandwidth and gain, further reduces the input offset of the comparator, and at the same time isolates the input signal from the output signal, reducing the kickback noise, thus realizing a lock with high speed and low offset. Save the comparator.

Figure 202210036895

Description

一种高速低失调锁存比较器A High Speed Low Offset Latching Comparator

技术领域technical field

本发明属于比较器技术领域,具体涉及一种高速低失调锁存比较器。The invention belongs to the technical field of comparators, in particular to a high-speed and low-offset latching comparator.

背景技术Background technique

比较器是模拟集成电路中的重要组成部分,特别是模数或数模转换器,其功能是对差分输入的两个模拟信号进行比较,根据差分输入信号的相对大小,输出得到相应的二进制逻辑电平0或1。比较器作为模数转换器的核心模块,其速度和精度直接影响模数转换器的整体性能。比较器的失调电压较大会导致模数转换器的失码,造成转换错误;比较器的速度较低,则不能在规定时间内完成比较输出正确比较结果,出现亚稳态。因此,要实现高速高精度模数转换器,比较器的速度和精度是关键。The comparator is an important part of the analog integrated circuit, especially the analog-to-digital or digital-to-analog converter. Its function is to compare the two analog signals of the differential input, and according to the relative magnitude of the differential input signal, the output obtains the corresponding binary logic. Level 0 or 1. As the core module of the analog-to-digital converter, the speed and accuracy of the comparator directly affect the overall performance of the analog-to-digital converter. If the offset voltage of the comparator is large, it will cause the missing code of the analog-to-digital converter, resulting in conversion errors; if the speed of the comparator is low, it cannot complete the comparison and output the correct comparison result within the specified time, resulting in a metastable state. Therefore, to realize high-speed and high-precision analog-to-digital converters, the speed and accuracy of the comparator are the keys.

在高速比较器中,锁存比较器的快速比较特性是被经常采用的,图1所示为现有锁存比较器的电路结构示意图,由两个放大单元(反相器)通过首尾相连组成一个环路,为一正反馈环路,当差分输入电压存在差值时,通过正反馈的作用是信号差值拉大直到一端接近电源VDD,一端接近地GND,从而实现相应的二进制逻辑电平0或1。此锁存比较器的比较速度与器件的尺寸成反比,进而形成失调与速度之间的矛盾,即精度与速度间的矛盾。同时,由于比较器的输入端与输出端的直接相连,导致该结构的回踢噪声很大。In high-speed comparators, the fast comparison characteristics of latched comparators are often used. Figure 1 shows the schematic diagram of the circuit structure of the existing latched comparators, which consists of two amplifying units (inverters) connected end-to-end. A loop is a positive feedback loop. When there is a difference in the differential input voltage, the function of the positive feedback is to increase the signal difference until one end is close to the power supply VDD, and the other end is close to the ground GND, so as to achieve the corresponding binary logic level. 0 or 1. The comparison speed of this latching comparator is inversely proportional to the size of the device, thereby forming a contradiction between offset and speed, that is, between precision and speed. At the same time, due to the direct connection between the input end and the output end of the comparator, the kickback noise of this structure is very large.

发明内容SUMMARY OF THE INVENTION

针对上述现有锁存比较器存在的矛盾,本发明提出了一种高速低失调锁存比较器,相较于现存锁存比较器能够提升速度的同时降低比较器的失调,并减小回踢噪声。Aiming at the above-mentioned contradictions of the existing latching comparators, the present invention proposes a high-speed and low-offset latching comparator, which can improve the speed while reducing the offset of the comparator and reduce the kickback compared with the existing latching comparators. noise.

本发明的技术方案是:The technical scheme of the present invention is:

一种高速低失调锁存比较器,包括:A high-speed, low-offset latching comparator including:

前置预放大器,用于对输入差分信号进行放大并加载到锁存器输入,隔离输入信号与输出信号;The pre-amplifier is used to amplify the input differential signal and load it into the latch input to isolate the input signal and the output signal;

锁存器,与前置预放大器相连,用于比较经前置预放大器放大后的差分信号;The latch is connected with the preamplifier and used to compare the differential signal amplified by the preamplifier;

所述前置预放大器由差分输入对和负载电阻构成;The preamplifier is composed of a differential input pair and a load resistor;

所述锁存器由两个首尾相连的放大单元构成,每个放大单元经由交叉耦合电容进行耦合,输入端由开关管进行控制,且每个放大单元的输出端由复位管进行复位至地,开关管与复位管接收相同的时钟信号同步导通或截止,分别为复位阶段或比较阶段。The latch is composed of two end-to-end amplifying units, each amplifying unit is coupled via a cross-coupling capacitor, the input end is controlled by a switch tube, and the output end of each amplifying unit is reset to ground by a reset tube, The switch tube and the reset tube receive the same clock signal to be turned on or off synchronously, which is a reset stage or a comparison stage, respectively.

进一步的,所述前置预放大器包括第一NMOS管MN1、第二NMOS管MN2、第三NMOS管MN3、第一负载电阻R1和第二负载电阻R2;其中第一NMOS管MN1和第二NMOS管MN2为差分输入对,第一NMOS管MN1和第二NMOS管MN2的栅极分别接收差分输入信号;所述第三NMOS管MN3作为偏置电流源,其栅极接偏置电压,其源极接地,其漏极分别接第一NMOS管MN1和第二NMOS管MN2的源极用于提供偏置电流;第一NMOS管MN1的漏极通过第一电阻R1后接电源,第二NMOS管MN2通过第二负载电阻R2后接电源,第一NMOS管MN1与第一电阻R1的连接点、第二NMOS管MN2和第二负载电阻R2的连接点为前置预放大器的差分信号输出端。Further, the pre-amplifier includes a first NMOS transistor MN1, a second NMOS transistor MN2, a third NMOS transistor MN3, a first load resistor R1 and a second load resistor R2; wherein the first NMOS transistor MN1 and the second NMOS transistor The transistor MN2 is a differential input pair, and the gates of the first NMOS transistor MN1 and the second NMOS transistor MN2 receive differential input signals respectively; the third NMOS transistor MN3 is used as a bias current source, its gate is connected to a bias voltage, and its source The electrode is grounded, and its drain is connected to the source of the first NMOS transistor MN1 and the second NMOS transistor MN2 respectively for providing bias current; the drain of the first NMOS transistor MN1 is connected to the power supply through the first resistor R1, and the second NMOS transistor is connected to the power supply. MN2 is connected to the power supply through the second load resistor R2. The connection point between the first NMOS transistor MN1 and the first resistor R1 and the connection point between the second NMOS transistor MN2 and the second load resistor R2 are the differential signal output terminals of the preamplifier.

进一步的,所述锁存器包括第一PMOS管MP1、第二PMOS管MP2、第三NMOS管MN3、第四NMOS管MN4、第五NMOS管MN5、第六NMOS管MN6、第七NMOS管MN7、第八NMOS管MN8、第九NMOS管MN9、第一耦合电容C1和第二耦合电容C2;其中,第四NMOS管MN4和第五NMOS管MN5为开关管,第四NMOS管MN4的漏极接第一NMOS管MN1的漏极,第五NMOS管MN5的漏极接第二NMOS管MN2的漏极,第四NMOS管MN4和第五NMOS管MN5的栅极接相同时钟信号;Further, the latch includes a first PMOS transistor MP1, a second PMOS transistor MP2, a third NMOS transistor MN3, a fourth NMOS transistor MN4, a fifth NMOS transistor MN5, a sixth NMOS transistor MN6, and a seventh NMOS transistor MN7 , the eighth NMOS transistor MN8, the ninth NMOS transistor MN9, the first coupling capacitor C1 and the second coupling capacitor C2; wherein, the fourth NMOS transistor MN4 and the fifth NMOS transistor MN5 are switch transistors, and the drain of the fourth NMOS transistor MN4 The drain of the first NMOS transistor MN1 is connected, the drain of the fifth NMOS transistor MN5 is connected to the drain of the second NMOS transistor MN2, and the gates of the fourth NMOS transistor MN4 and the fifth NMOS transistor MN5 are connected to the same clock signal;

第六NMOS管MN6和第一PMOS管MP1构成第一放大单元,第一PMOS管MP1的源极接电源,其漏极接第六NMOS管MN6的漏极,第一PMOS管MP1的栅极接第二PMOS管MP2的漏极;第六NMOS管MN6的栅极接第四NMOS管MN4的源极,第六NMOS管MN6的源极接地;第六NMOS管MN6的栅极和第一PMOS管MP1的栅极之间通过第一耦合电容C1进行耦合;The sixth NMOS transistor MN6 and the first PMOS transistor MP1 constitute a first amplifying unit. The source of the first PMOS transistor MP1 is connected to the power supply, the drain of the first PMOS transistor MP1 is connected to the drain of the sixth NMOS transistor MN6, and the gate of the first PMOS transistor MP1 is connected to the power supply. The drain of the second PMOS transistor MP2; the gate of the sixth NMOS transistor MN6 is connected to the source of the fourth NMOS transistor MN4, and the source of the sixth NMOS transistor MN6 is grounded; the gate of the sixth NMOS transistor MN6 is connected to the first PMOS transistor The gates of MP1 are coupled through the first coupling capacitor C1;

第七NMOS管MN7和第二PMOS管MP2构成第二放大单元,第二PMOS管MP2的源极接电源,其漏极接第七NMOS管MN7的漏极,第二PMOS管MP2的栅极接第一PMOS管MP1的漏极;第七NMOS管MN7的栅极接第五NMOS管MN5的源极,第七NMOS管MN7的源极接地;第七NMOS管MN7的栅极和第二PMOS管MP2的栅极之间通过第二耦合电容C2进行耦合;The seventh NMOS transistor MN7 and the second PMOS transistor MP2 form a second amplifying unit. The source of the second PMOS transistor MP2 is connected to the power supply, the drain is connected to the drain of the seventh NMOS transistor MN7, and the gate of the second PMOS transistor MP2 is connected to the power supply. The drain of the first PMOS transistor MP1; the gate of the seventh NMOS transistor MN7 is connected to the source of the fifth NMOS transistor MN5, and the source of the seventh NMOS transistor MN7 is grounded; the gate of the seventh NMOS transistor MN7 and the second PMOS transistor The gates of MP2 are coupled through the second coupling capacitor C2;

第一PMOS管MP1栅极、第七NMOS管MN7漏极和第二PMOS管MP2漏极的连接点,以及第二PMOS管MP2栅极、第六NMOS管MN6漏极和第一PMOS管MP1漏极作的连接点为锁存器的两个输出端;The connection point of the gate of the first PMOS transistor MP1, the drain of the seventh NMOS transistor MN7 and the drain of the second PMOS transistor MP2, and the gate of the second PMOS transistor MP2, the drain of the sixth NMOS transistor MN6 and the drain of the first PMOS transistor MP1 The connection points of the poles are the two output terminals of the latch;

所述第八NMOS管MN8和第九NMOS管MN9为复位管,所述第八NMOS管MN8的漏极接第一PMOS管MP1的漏极,第八NMOS管MN8的栅极接第四NMOS管MN4的栅极,第八NMOS管MN8的源极接地;所述第九NMOS管MN9的漏极接第二PMOS管MP2的漏极,第九NMOS管MN9的栅极接第五NMOS管MN5的栅极,第九NMOS管MN9的源极接地。The eighth NMOS transistor MN8 and the ninth NMOS transistor MN9 are reset transistors, the drain of the eighth NMOS transistor MN8 is connected to the drain of the first PMOS transistor MP1, and the gate of the eighth NMOS transistor MN8 is connected to the fourth NMOS transistor The gate of MN4, the source of the eighth NMOS transistor MN8 is grounded; the drain of the ninth NMOS transistor MN9 is connected to the drain of the second PMOS transistor MP2, and the gate of the ninth NMOS transistor MN9 is connected to the drain of the fifth NMOS transistor MN5 The gate, the source of the ninth NMOS transistor MN9 is grounded.

本发明的有益效果是:本发明通过在锁存器中插入交叉耦合电容,并通过引入复位管使得在复位阶段将PMOS管栅极电压复位至地,可以减小比较器的静态失调以及提高锁存器的速度。此外前置预放大器的引入,提供较高的速度、带宽和增益,进一步降低比较器输入失调,同时将输入信号与输出信号隔离,减小回踢噪声,从而实现了一个具有高速低失调的锁存比较器。The beneficial effects of the present invention are: by inserting a cross-coupling capacitor in the latch, and by introducing a reset transistor, the gate voltage of the PMOS transistor is reset to the ground in the reset stage, which can reduce the static offset of the comparator and improve the latching performance. storage speed. In addition, the introduction of the preamplifier provides higher speed, bandwidth and gain, further reduces the input offset of the comparator, and at the same time isolates the input signal from the output signal, reducing the kickback noise, thus realizing a lock with high speed and low offset. Save the comparator.

附图说明Description of drawings

图1为现有锁存比较器的电路结构示意图;1 is a schematic diagram of a circuit structure of an existing latch comparator;

图2为本发明提出的一种高速低失调锁存比较器的电路结构示意图;2 is a schematic diagram of the circuit structure of a high-speed low-offset latch comparator proposed by the present invention;

图3为本发明提出的锁存比较器复位阶段的电路结构示意图;3 is a schematic diagram of the circuit structure of the latching comparator reset stage proposed by the present invention;

图4为本发明提出的锁存比较器比较阶段的电路结构示意图。FIG. 4 is a schematic diagram of the circuit structure of the comparison stage of the latch comparator proposed by the present invention.

具体实施方式Detailed ways

下面结合附图详细描述本发明的技术方案:The technical solutions of the present invention are described in detail below in conjunction with the accompanying drawings:

现有锁存比较器的电路结构示意图,如图1所示,其原理是通过时钟信号Latch控制比较器的比较阶段和复位阶段,当Latch为高电位时,开关管MN3和MN4及复位管MN5均导通,比较器进入复位阶段,比较器的输出端(输入端)被拉至同一电位。当Latch为低电位时,开关管MN3和MN4及复位管MN5均截止,比较器进入比较阶段,其输入端的信号差触发两个放大单元形成的正反馈环路,将信号差值拉大到一端接近电源VDD,一端接近地GND。由于此结构的速度与沟道长度的平方成反比,为了达到较高速度,一般选取最小的沟道长度,故而晶体管间的失配会越来越严重,从而导致失调过大,限制比较器精度。The schematic diagram of the circuit structure of the existing latch comparator is shown in Figure 1. The principle is to control the comparator phase and reset phase through the clock signal Latch. When the Latch is at a high potential, the switch tubes MN3 and MN4 and the reset tube MN5 Both are turned on, the comparator enters the reset phase, and the output terminal (input terminal) of the comparator is pulled to the same potential. When the Latch is low, the switch tubes MN3 and MN4 and the reset tube MN5 are all turned off, and the comparator enters the comparison stage. The signal difference at its input triggers the positive feedback loop formed by the two amplifying units, and the signal difference is enlarged to one end. Close to the power supply VDD, one end is close to the ground GND. Since the speed of this structure is inversely proportional to the square of the channel length, in order to achieve a higher speed, the minimum channel length is generally selected, so the mismatch between transistors will become more and more serious, resulting in excessive offset and limiting the accuracy of the comparator .

本发明提出的一种高速低失调锁存比较器的电路结构示意图,如图2所示,包括前置预放大器和锁存器。前置预放大器,用于对输入差分信号进行放大并加载到锁存器输入,隔离输入信号与输出信号;锁存器,与前置预放大器相连,用于比较经前置预放大器放大后的差分信号。A schematic diagram of the circuit structure of a high-speed low-offset latch comparator proposed by the present invention, as shown in FIG. 2 , includes a preamplifier and a latch. The preamplifier is used to amplify the input differential signal and load it into the latch input to isolate the input signal from the output signal; the latch is connected to the preamplifier and used to compare the preamplifier amplified differential signal.

前置预放大器包括差分输入对1和负载电阻2;差分输入对1包括第一NMOS管MN1和第二NMOS管MN2,第一NMOS管MN1和第二NMOS管MN2的栅极分别接差分输入信号Vinn和Vinp,源极均接偏置电流,漏极分别接负载电阻作为前置预放大器的差分输出。其中偏置电流源包括第三NMOS管MN3,其栅极接偏置电压VB,源极接地GND,漏极接第一NMOS管MN1和第二NMOS管MN2的源极,用于为所述差分输入对提供偏置电流。The preamplifier includes a differential input pair 1 and a load resistor 2; the differential input pair 1 includes a first NMOS transistor MN1 and a second NMOS transistor MN2, and the gates of the first NMOS transistor MN1 and the second NMOS transistor MN2 are respectively connected to the differential input signal Vinn and Vinp, the source is connected to the bias current, and the drain is connected to the load resistance as the differential output of the preamplifier. The bias current source includes a third NMOS transistor MN3, the gate of which is connected to the bias voltage VB, the source is grounded to GND, and the drain is connected to the sources of the first NMOS transistor MN1 and the second NMOS transistor MN2, which are used for the differential The input pair provides bias current.

负载电阻2包括第一负载电阻R1和第二负载电阻R2,第一负载电阻R1两端分别接第一NMOS管MN1的漏极和电源VDD,第二负载电阻R2两端分别接第二NMOS管MN2的漏极和电源VDD。与第一NMOS管MN1和第二NMOS管MN2漏极相连的一端作为前置预放大器的输出端输出,即为图2的输出节点Von和VopThe load resistor 2 includes a first load resistor R1 and a second load resistor R2. Both ends of the first load resistor R1 are respectively connected to the drain of the first NMOS transistor MN1 and the power supply VDD, and both ends of the second load resistor R2 are respectively connected to the second NMOS transistor. Drain of MN2 and power supply VDD. One end connected to the drains of the first NMOS transistor MN1 and the second NMOS transistor MN2 is used as the output end of the pre-amplifier output, namely the output nodes V on and V op in FIG. 2 .

前置预放大器用电阻作为负载,其增益为:The preamplifier is loaded with a resistor, and its gain is:

AV=-gm1RL A V = -gm 1 R L

可提供一定的增益,将差分输入信号放大一定的倍数,输入至锁存器进行比较,从而可以降低比较器的输入失调,另一方面,用电阻作为负载可以提高预放大器的速度,从而提高比较器的速度。It can provide a certain gain, amplify the differential input signal by a certain multiple, and input it to the latch for comparison, thereby reducing the input offset of the comparator. On the other hand, using a resistor as a load can increase the speed of the pre-amplifier, thereby improving the comparison. speed of the device.

锁存器包括第一开关管、第二开关管、由交叉耦合电容(包括第一耦合电容C1和第二耦合电容C2,C1=C2=C)进行耦合的第一放大单元3和第二放大单元4及第一复位管和第二复位管;第一开关管包括第四NMOS管MN4,第二开关管包括第五NMOS管MN5,开关管的漏极分别接前置预放大器的差分输出信号,分别连接第一NMOS管MN1和第二NMOS管MN2的漏极(即Von和Vop),栅极接相同时钟信号Latch,源极作为输出分别接第一放大单元和第二放大单元的输入端。当时钟信号Latch为高电位时,开关管均导通,经由前置预放大器放大后的差分信号被采样至放大单元的输入端;当时钟信号Latch为低电位时,开关管均截止,此时进入比较器比较阶段。The latch includes a first switch tube, a second switch tube, a first amplifying unit 3 and a first amplifying unit 3 coupled by a cross-coupling capacitor (including a first coupling capacitor C1 and a second coupling capacitor C2, C 1 =C 2 =C). Two amplifying units 4 and a first reset tube and a second reset tube; the first switch tube includes a fourth NMOS tube MN4, the second switch tube includes a fifth NMOS tube MN5, and the drains of the switch tubes are respectively connected to the differential of the preamplifier. The output signal is connected to the drains (ie V on and V op ) of the first NMOS transistor MN1 and the second NMOS transistor MN2 respectively, the gate is connected to the same clock signal Latch, and the source is connected to the first amplifying unit and the second amplifying unit as an output. input of the unit. When the clock signal Latch is at a high potential, the switches are all turned on, and the differential signal amplified by the pre-amplifier is sampled to the input end of the amplifying unit; when the clock signal Latch is at a low potential, the switches are all turned off, at this time Enter the comparator comparison phase.

第一放大单元包括第六NMOS管MN6和第一PMOS管MP1,第二放大单元包括第七NMOS管MN7和第二PMOS管MP2。第六NMOS管MN6的栅极和第一PMOS管MP1的栅极之间通过第一耦合电容C1进行耦合,第六NMOS管MN6的栅极接第四NMOS管MN4的源极作为第一放大单元的输入端,第一PMOS管MP1的栅极接第七NMOS管MN7和第二PMOS管MP2的漏极作为锁存器的差分输出端;第七NMOS管MN7的栅极和第二PMOS管MP2的栅极之间通过第二耦合电容C2进行耦合,第七NMOS管MN7的栅极接第五NMOS管MN5的源极作为第二放大单元的输入端,第二PMOS管MP2的栅极接第六NMOS管MN6和第一PMOS管MP1的漏极作为锁存器的另一差分输出端;第一PMOS管MP1和第二PMOS管MP2的源极接电源VDD,第六NMOS管MN6和第七NMOS管MN7的源极接地GND。由于交叉耦合电容C1和C2的引入,将PMOS和NMOS的栅极电压进行隔离,可以分别进行偏置,NMOS的偏置电压有预放大器的输出决定,PMOS的偏置电压由复位后的电压决定,同时由于耦合电容的插入,使得NMOS和PMOS的栅源电压VGS可以最大化,超过VDD。传统结构的NMOS和PMOS的栅源电压之和为:The first amplifying unit includes a sixth NMOS transistor MN6 and a first PMOS transistor MP1, and the second amplifying unit includes a seventh NMOS transistor MN7 and a second PMOS transistor MP2. The gate of the sixth NMOS transistor MN6 and the gate of the first PMOS transistor MP1 are coupled through the first coupling capacitor C1, and the gate of the sixth NMOS transistor MN6 is connected to the source of the fourth NMOS transistor MN4 as the first amplifying unit The gate of the first PMOS tube MP1 is connected to the seventh NMOS tube MN7 and the drain of the second PMOS tube MP2 as the differential output end of the latch; the gate of the seventh NMOS tube MN7 and the second PMOS tube MP2 The gates are coupled through the second coupling capacitor C2, the gate of the seventh NMOS transistor MN7 is connected to the source of the fifth NMOS transistor MN5 as the input terminal of the second amplifying unit, and the gate of the second PMOS transistor MP2 is connected to the first The drains of the six NMOS transistors MN6 and the first PMOS transistor MP1 are used as another differential output terminal of the latch; the sources of the first PMOS transistor MP1 and the second PMOS transistor MP2 are connected to the power supply VDD, and the sixth NMOS transistor MN6 and the seventh The source of the NMOS transistor MN7 is grounded to GND. Due to the introduction of the cross - coupling capacitors C1 and C2, the gate voltages of the PMOS and NMOS are isolated and can be biased separately. The bias voltage of the NMOS is determined by the output of the pre-amplifier, and the bias voltage of the PMOS is determined by the reset voltage. The voltage is determined, and due to the insertion of coupling capacitors, the gate-source voltage VGS of NMOS and PMOS can be maximized, exceeding VDD. The sum of the gate-source voltages of the NMOS and PMOS of the traditional structure is:

VGSN+VGSP=VDD V GSN +V GSP =V DD

由于耦合电容的插入,NMOS和PMOS的栅源电压之和为:Due to the insertion of coupling capacitors, the sum of the gate-source voltages of NMOS and PMOS is:

VGSN+VGSP=VDD+VC V GSN +V GSP =V DD +V C

从而,可以提高MOS管的跨导gm,进而提高比较器的速度。不仅如此,交叉耦合电容的插入,还能起到存储记忆功能,可以降低比较器的静态失调。Therefore, the transconductance gm of the MOS transistor can be increased, thereby increasing the speed of the comparator. Not only that, the insertion of the cross-coupling capacitor can also play a memory function, which can reduce the static offset of the comparator.

第一复位管包括第八NMOS管MN8,第二复位管包括第九NMOS管MN9,第八NMOS管MN8的漏极接第六NMOS管MN6和第一PMOS管MP1的漏极,第九NMOS管MN9的漏极接第七NMOS管MN7和第二PMOS管MP2的漏极,第八NMOS管MN8和第九NMOS管MN9的栅极接开关管的栅极接时钟信号Latch,第八NMOS管MN8和第九NMOS管MN9的源极接地GND。The first reset transistor includes an eighth NMOS transistor MN8, the second reset transistor includes a ninth NMOS transistor MN9, the drain of the eighth NMOS transistor MN8 is connected to the drain of the sixth NMOS transistor MN6 and the drain of the first PMOS transistor MP1, and the ninth NMOS transistor The drain of MN9 is connected to the drain of the seventh NMOS transistor MN7 and the drain of the second PMOS transistor MP2, the gates of the eighth NMOS transistor MN8 and the ninth NMOS transistor MN9 are connected to the gate of the switch transistor and the clock signal Latch, and the eighth NMOS transistor MN8 and the source of the ninth NMOS transistor MN9 is grounded to GND.

当时钟信号Latch为高电位时,如图3所示,开关管和复位管均导通,经由前置预放大器放大后的差分信号被采样至放大单元的输入端,第六NMOS管MN6和第七NMOS管MN7的漏电压和源电压均为0,漏源电流为0,无电流流过,经前置预放大器的输出信号持续采样至交叉耦合电容上;PMOS管的栅电压复位至地GND,使比较器在下一次比较阶段,PMOS建立时间较快,提高PMOS速度,从而提高比较器的速度;此时,同时差分输出复位至地GND。When the clock signal Latch is at a high level, as shown in Figure 3, both the switch tube and the reset tube are turned on, and the differential signal amplified by the preamplifier is sampled to the input end of the amplifying unit. The sixth NMOS transistor MN6 and the first The drain voltage and source voltage of the seven NMOS transistor MN7 are both 0, the drain-source current is 0, no current flows, and the output signal of the preamplifier is continuously sampled to the cross-coupling capacitor; the gate voltage of the PMOS transistor is reset to the ground GND , so that in the next comparison stage of the comparator, the PMOS setup time is faster, and the PMOS speed is increased, thereby increasing the speed of the comparator; at this time, the differential output is reset to the ground GND at the same time.

当时钟信号Latch为低电位时,如图4所示,开关管和复位管均截止,此时前置预放大器与锁存器之间连接断开,比较器进入比较阶段,对开关管截止前最后时刻的采样电压进行比较。此时交叉耦合电容起到电平位移作用,将NMOS和PMOS的栅源电压之和提升至高于VDD。现假设,第六NMOS管MN6的栅电压略高于第七NMOS管MN7的栅电压,第六NMOS管MN6的漏源电流增大使Voutp端的电压降低,由于Voutp端的电压降低,流过第七NMOS管MN7的漏源电流将减小,从而Voutn端的电压进一步增大,第一PMOS管MP1和第二PMOS管MP2管的工作过程与第六NMOS管MN6和第七NMOS管MN7相同。两放大单元构成正反馈结构,将由于正反馈作用,可以快速的将信号差值拉大到一端接近电源VDD,一端接近地GND。When the clock signal Latch is at a low potential, as shown in Figure 4, both the switch tube and the reset tube are turned off. At this time, the connection between the preamplifier and the latch is disconnected, and the comparator enters the comparison stage. Before the switch tube is turned off The sampled voltages at the last moment are compared. At this time, the cross-coupling capacitor acts as a level shifter, raising the sum of the gate-source voltages of NMOS and PMOS to higher than VDD. It is now assumed that the gate voltage of the sixth NMOS transistor MN6 is slightly higher than the gate voltage of the seventh NMOS transistor MN7, and the drain-source current of the sixth NMOS transistor MN6 increases to reduce the voltage at the V outp terminal . The drain-source current of the seven NMOS transistors MN7 will decrease, so that the voltage at the V outn terminal will further increase. The two amplifying units form a positive feedback structure, and due to the positive feedback effect, the signal difference can be quickly enlarged so that one end is close to the power supply VDD, and the other end is close to the ground GND.

因此本发明根据现有锁存比较器的特点,通过锁存器中插入交叉耦合电容和复位管,提高MOS管栅源电压VGS,提高跨导gm,将PMOS管的栅电压复位至地,提高PMOS的速度,进而达到提高比较器速度的目的;同时添加前置预放大器,在保证前置预放大器速度的同时可以提供一定增益,降低比较器输入失调,同时可以将比较器输入和输出进行隔离,达到降低回踢噪声的效果。从而实现了在提高比较器速度的同时,达到了降低比较器失调的效果,供高速高精度模数转换器使用。Therefore, according to the characteristics of the existing latching comparator, the present invention increases the gate-source voltage V GS of the MOS transistor, increases the transconductance gm, and resets the gate voltage of the PMOS transistor to ground by inserting a cross-coupling capacitor and a reset transistor into the latch. Improve the speed of the PMOS, and then achieve the purpose of increasing the speed of the comparator; at the same time, adding a pre-amplifier can provide a certain gain while ensuring the speed of the pre-amplifier, reduce the input offset of the comparator, and at the same time, the input and output of the comparator can be processed. isolation to reduce kickback noise. Therefore, while improving the speed of the comparator, the effect of reducing the offset of the comparator is achieved, which is used for the high-speed high-precision analog-to-digital converter.

Claims (3)

1.一种高速低失调锁存比较器,其特征在于,包括:1. a high-speed low-offset latching comparator, is characterized in that, comprises: 前置预放大器,用于对输入差分信号进行放大并加载到锁存器输入,隔离输入信号与输出信号;The pre-amplifier is used to amplify the input differential signal and load it into the latch input to isolate the input signal and the output signal; 锁存器,与前置预放大器相连,用于比较经前置预放大器放大后的差分信号;The latch is connected with the preamplifier and used to compare the differential signal amplified by the preamplifier; 所述前置预放大器由差分输入对和负载电阻构成;The preamplifier is composed of a differential input pair and a load resistor; 所述锁存器由两个首尾相连的放大单元构成,每个放大单元经由交叉耦合电容进行耦合,输入端由开关管进行控制,且每个放大单元的输出端由复位管进行复位至地,开关管与复位管接收相同的时钟信号同步导通或截止,分别为复位阶段或比较阶段。The latch is composed of two end-to-end amplifying units, each amplifying unit is coupled via a cross-coupling capacitor, the input end is controlled by a switch tube, and the output end of each amplifying unit is reset to ground by a reset tube, The switch tube and the reset tube receive the same clock signal to be turned on or off synchronously, which is a reset stage or a comparison stage, respectively. 2.根据权利要求1所述的高速低失调锁存比较器,其特征在于,所述前置预放大器包括第一NMOS管(MN1)、第二NMOS管(MN2)、第三NMOS管(MN3)、第一负载电阻(R1)和第二负载电阻(R2);其中第一NMOS管(MN1)和第二NMOS管(MN2)为差分输入对,第一NMOS管(MN1)和第二NMOS管(MN2)的栅极分别接收差分输入信号;所述第三NMOS管(MN3)作为偏置电流源,其栅极接偏置电压,其源极接地,其漏极分别接第一NMOS管(MN1)和第二NMOS管(MN2)的源极用于提供偏置电流;第一NMOS管(MN1)的漏极通过第一电阻(R1)后接电源,第二NMOS管(MN2)通过第二负载电阻(R2)后接电源,第一NMOS管(MN1)与第一电阻(R1)的连接点、第二NMOS管(MN2)和第二负载电阻(R2)的连接点为前置预放大器的差分信号输出端。2. The high-speed low-offset latch comparator according to claim 1, wherein the pre-amplifier comprises a first NMOS transistor (MN1), a second NMOS transistor (MN2), and a third NMOS transistor (MN3). ), a first load resistor (R1) and a second load resistor (R2); wherein the first NMOS transistor (MN1) and the second NMOS transistor (MN2) are differential input pairs, the first NMOS transistor (MN1) and the second NMOS transistor The gate of the tube (MN2) receives the differential input signal respectively; the third NMOS tube (MN3) is used as a bias current source, its gate is connected to the bias voltage, its source is grounded, and its drain is connected to the first NMOS tube respectively (MN1) and the source of the second NMOS transistor (MN2) are used to provide bias current; the drain of the first NMOS transistor (MN1) is connected to the power supply through the first resistor (R1), and the second NMOS transistor (MN2) passes through The second load resistor (R2) is connected to the power supply, and the connection point between the first NMOS transistor (MN1) and the first resistor (R1), and the connection point between the second NMOS transistor (MN2) and the second load resistor (R2) are the front Differential signal output of the preamplifier. 3.根据权利要求2所述的高速低失调锁存比较器,其特征在于,所述锁存器包括第一PMOS管(MP1)、第二PMOS管(MP2)、第三NMOS管(MN3)、第四NMOS管(MN4)、第五NMOS管(MN5)、第六NMOS管(MN6)、第七NMOS管(MN7)、第八NMOS管(MN8)、第九NMOS管(MN9)、第一耦合电容(C1)和第二耦合电容(C2);其中,第四NMOS管(MN4)和第五NMOS管(MN5)为开关管,第四NMOS管(MN4)的漏极接第一NMOS管(MN1)的漏极,第五NMOS管(MN5)的漏极接第二NMOS管(MN2)的漏极,第四NMOS管(MN4)和第五NMOS管(MN5)的栅极接相同时钟信号;3. The high-speed low-offset latch comparator according to claim 2, wherein the latch comprises a first PMOS transistor (MP1), a second PMOS transistor (MP2), and a third NMOS transistor (MN3) , the fourth NMOS transistor (MN4), the fifth NMOS transistor (MN5), the sixth NMOS transistor (MN6), the seventh NMOS transistor (MN7), the eighth NMOS transistor (MN8), the ninth NMOS transistor (MN9), the A coupling capacitor (C1) and a second coupling capacitor (C2); wherein, the fourth NMOS transistor (MN4) and the fifth NMOS transistor (MN5) are switch transistors, and the drain of the fourth NMOS transistor (MN4) is connected to the first NMOS The drain of the transistor (MN1), the drain of the fifth NMOS transistor (MN5) is connected to the drain of the second NMOS transistor (MN2), and the gates of the fourth NMOS transistor (MN4) and the fifth NMOS transistor (MN5) are connected to the same clock signal; 第六NMOS管(MN6)和第一PMOS管(MP1)构成第一放大单元,第一PMOS管(MP1)的源极接电源,其漏极接第六NMOS管(MN6)的漏极,第一PMOS管(MP1)的栅极接第二PMOS管(MP2)的漏极;第六NMOS管(MN6)的栅极接第四NMOS管(MN4)的源极,第六NMOS管(MN6)的源极接地;第六NMOS管(MN6)的栅极和第一PMOS管(MP1)的栅极之间通过第一耦合电容(C1)进行耦合;The sixth NMOS transistor (MN6) and the first PMOS transistor (MP1) constitute a first amplifying unit. The source of the first PMOS transistor (MP1) is connected to the power supply, and its drain is connected to the drain of the sixth NMOS transistor (MN6). The gate of a PMOS transistor (MP1) is connected to the drain of the second PMOS transistor (MP2); the gate of the sixth NMOS transistor (MN6) is connected to the source of the fourth NMOS transistor (MN4), and the sixth NMOS transistor (MN6) The source is grounded; the gate of the sixth NMOS transistor (MN6) and the gate of the first PMOS transistor (MP1) are coupled through a first coupling capacitor (C1); 第七NMOS管(MN7)和第二PMOS管(MP2)构成第二放大单元,第二PMOS管(MP2)的源极接电源,其漏极接第七NMOS管(MN7)的漏极,第二PMOS管(MP2)的栅极接第一PMOS管(MP1)的漏极;第七NMOS管(MN7)的栅极接第五NMOS管(MN5)的源极,第七NMOS管(MN7)的源极接地;第七NMOS管(MN7)的栅极和第二PMOS管(MP2)的栅极之间通过第二耦合电容(C2)进行耦合;The seventh NMOS transistor (MN7) and the second PMOS transistor (MP2) constitute a second amplifying unit. The source of the second PMOS transistor (MP2) is connected to the power supply, and its drain is connected to the drain of the seventh NMOS transistor (MN7). The gates of the two PMOS transistors (MP2) are connected to the drain of the first PMOS transistor (MP1); the gate of the seventh NMOS transistor (MN7) is connected to the source of the fifth NMOS transistor (MN5), and the seventh NMOS transistor (MN7) The source is grounded; the gate of the seventh NMOS transistor (MN7) and the gate of the second PMOS transistor (MP2) are coupled through a second coupling capacitor (C2); 第一PMOS管(MP1)栅极、第七NMOS管(MN7)漏极和第二PMOS管(MP2)漏极的连接点,以及第二PMOS管(MP2)栅极、第六NMOS管(MN6)漏极和第一PMOS管(MP1)漏极作的连接点为锁存器的两个输出端;The connection point of the gate of the first PMOS transistor (MP1), the drain of the seventh NMOS transistor (MN7) and the drain of the second PMOS transistor (MP2), and the gate of the second PMOS transistor (MP2), the sixth NMOS transistor (MN6) ) The connection point between the drain and the drain of the first PMOS tube (MP1) is the two output ends of the latch; 所述第八NMOS管(MN8)和第九NMOS管(MN9)为复位管,所述第八NMOS管(MN8)的漏极接第一PMOS管(MP1)的漏极,第八NMOS管(MN8)的栅极接第四NMOS管(MN4)的栅极,第八NMOS管(MN8)的源极接地;所述第九NMOS管(MN9)的漏极接第二PMOS管(MP2)的漏极,第九NMOS管(MN9)的栅极接第五NMOS管(MN5)的栅极,第九NMOS管(MN9)的源极接地。The eighth NMOS transistor (MN8) and the ninth NMOS transistor (MN9) are reset transistors, the drain of the eighth NMOS transistor (MN8) is connected to the drain of the first PMOS transistor (MP1), and the eighth NMOS transistor ( The gate of MN8) is connected to the gate of the fourth NMOS transistor (MN4), and the source of the eighth NMOS transistor (MN8) is grounded; the drain of the ninth NMOS transistor (MN9) is connected to the drain of the second PMOS transistor (MP2). The drain, the gate of the ninth NMOS transistor (MN9) is connected to the gate of the fifth NMOS transistor (MN5), and the source of the ninth NMOS transistor (MN9) is grounded.
CN202210036895.9A 2022-01-13 2022-01-13 High-speed low-offset latch comparator Pending CN114389585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210036895.9A CN114389585A (en) 2022-01-13 2022-01-13 High-speed low-offset latch comparator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210036895.9A CN114389585A (en) 2022-01-13 2022-01-13 High-speed low-offset latch comparator

Publications (1)

Publication Number Publication Date
CN114389585A true CN114389585A (en) 2022-04-22

Family

ID=81202039

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210036895.9A Pending CN114389585A (en) 2022-01-13 2022-01-13 High-speed low-offset latch comparator

Country Status (1)

Country Link
CN (1) CN114389585A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115276619A (en) * 2022-09-28 2022-11-01 奉加微电子(昆山)有限公司 Dynamic comparator, analog-to-digital converter and electronic equipment
CN117394858A (en) * 2023-12-08 2024-01-12 成都通量科技有限公司 Comparator, analog-to-digital converter and device for reducing kickback noise

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106059587A (en) * 2016-05-23 2016-10-26 西安电子科技大学 High speed low offset voltage comparator circuit
CN106374929A (en) * 2016-12-02 2017-02-01 桂林电子科技大学 A Fast Response Dynamic Latch Comparator
CN108832916A (en) * 2018-06-22 2018-11-16 安徽传矽微电子有限公司 A kind of high-speed low-power-consumption comparator circuit of low dynamic imbalance
CN110912540A (en) * 2019-12-06 2020-03-24 南京德睿智芯电子科技有限公司 High-speed pre-amplification latch comparator with low dynamic mismatch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106059587A (en) * 2016-05-23 2016-10-26 西安电子科技大学 High speed low offset voltage comparator circuit
CN106374929A (en) * 2016-12-02 2017-02-01 桂林电子科技大学 A Fast Response Dynamic Latch Comparator
CN108832916A (en) * 2018-06-22 2018-11-16 安徽传矽微电子有限公司 A kind of high-speed low-power-consumption comparator circuit of low dynamic imbalance
CN110912540A (en) * 2019-12-06 2020-03-24 南京德睿智芯电子科技有限公司 High-speed pre-amplification latch comparator with low dynamic mismatch

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115276619A (en) * 2022-09-28 2022-11-01 奉加微电子(昆山)有限公司 Dynamic comparator, analog-to-digital converter and electronic equipment
CN115276619B (en) * 2022-09-28 2023-02-17 奉加微电子(昆山)有限公司 Dynamic comparator, analog-to-digital converter and electronic equipment
CN117394858A (en) * 2023-12-08 2024-01-12 成都通量科技有限公司 Comparator, analog-to-digital converter and device for reducing kickback noise
CN117394858B (en) * 2023-12-08 2024-03-19 成都通量科技有限公司 Comparator, analog-to-digital converter and device for reducing kickback noise

Similar Documents

Publication Publication Date Title
US9973198B2 (en) Telescopic amplifier with improved common mode settling
CN110912540B (en) High-speed pre-amplification latch comparator with low dynamic mismatch
CN103546127A (en) A low-power high-speed comparator with offset storage
CN111200402B (en) High-linearity dynamic residual error amplifier circuit capable of improving gain
CN104242879A (en) High-speed low-imbalance dynamic comparator for high-speed analog-digital converter
CN114389585A (en) High-speed low-offset latch comparator
CN107565966B (en) A Comparator Applied to High Speed Pipeline ADC
US5798660A (en) Cascoded differential pair amplifier with current injection for gain enhancement
CN215682235U (en) Circuit and comparator
CN106067822B (en) A High Speed and High Precision CMOS Latch Comparator
CN114520650A (en) Low-noise two-stage dynamic comparator suitable for SAR ADC
CN113949368B (en) Voltage Comparator Circuit
CN111313871B (en) Dynamic pre-amplification circuit and dynamic comparator
CN113872574A (en) High-speed comparator applied to high-speed analog-to-digital converter
CN116054765B (en) PVT stable bias enhanced high-gain annular amplifier and control method thereof
CN117767896A (en) Amplifying circuit and comparator
CN214281351U (en) Dynamic comparator
CN110224700A (en) A kind of high speed complementation type dual power supply operational amplifier
CN112953420B (en) A dynamic operational amplifier circuit with input tube in linear region
US11658626B2 (en) Split miller compensation in two-stage differential amplifiers
CN113422594B (en) Dynamic comparator
CN113595533B (en) A DC offset automatic calibration circuit for high-speed and high-bandwidth comparators
CN212278203U (en) A Rail-to-Rail Operational Amplifier Switchable to Comparator Mode
CN210670009U (en) High-speed pre-amplification latch comparator with low dynamic mismatch
Taherzadeh-Sani et al. A pseudo-class-AB telescopic-cascode operational amplifier

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20220422