CN114380608B - 一种tft-lcd基板玻璃供料道用氧化锆质填充料 - Google Patents
一种tft-lcd基板玻璃供料道用氧化锆质填充料 Download PDFInfo
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 239000000945 filler Substances 0.000 title claims abstract description 45
- 239000011521 glass Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 239000000843 powder Substances 0.000 claims abstract description 40
- 239000002245 particle Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 19
- 229910002076 stabilized zirconia Inorganic materials 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 239000003381 stabilizer Substances 0.000 claims abstract description 7
- 239000004014 plasticizer Substances 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000003723 Smelting Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 36
- 229910052697 platinum Inorganic materials 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 5
- 238000004321 preservation Methods 0.000 abstract description 4
- 238000011049 filling Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 229910052845 zircon Inorganic materials 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000007885 magnetic separation Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 230000008093 supporting effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开的一种TFT‑LCD基板玻璃供料道用氧化锆质填充料，以电熔稳定氧化锆颗粒和氧化锆细粉为主原料、以活性α‑Al2O3微粉和烧结氧化铝微粉作助烧剂，以白泥和硅微粉作增塑剂，经混和、磁选和包装后，即制得TFT‑LCD基板玻璃供料道用氧化锆质填充料；所述氧化锆质填充料的原料及质量百分比为：电熔稳定氧化锆颗粒75～85%，氧化锆细粉7～15%，活性α‑Al2O3微粉和烧结氧化铝微粉4～8%，白泥和硅微粉2～4%；所述氧化锆质填充料中ZrO2+HfO2+稳定剂含量大于85%，Al2O3含量大于5%，SiO2含量小于5%。本发明具有保温隔热效果好、流动性好、塑性好、杂质少、不污染铂金管道特点。
Description
技术领域
本发明属于耐火材料制备技术领域，具体涉及一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
背景技术
TFT-LCD基板玻璃是构成液晶显示器件的重要部件，是平板显示产业的关键材料之一；熔融溢流法生产的基板玻璃因具有表面质量较好，能精确控制玻璃基板的厚度、表面平整度和翘曲，使玻璃基板的抛光量降低到最小，制造成本较低，已成为全球最先进的主流生产工艺，其技术关键是高温熔制的玻璃液流入供料道系统，然后经澄清、均化、 温度调节，在成形装置中形成玻璃板；目前，供料道系统主要采用铂金通道结构，铂金通道在安装和使用过程中需要一种填充料对铂金通道进行固定、密封及起到保护作用；填充料主要使用在致密锆英石耐火制品与铂金通道之间，工作温度为1550℃～1650℃，正常情况下不接触玻璃液，但在特殊情况下可能与玻璃液接触，要求髙温下可短期抵御玻璃液侵蚀。
熔融溢流法基板玻璃供料道有以下几个特点：1）温度控制精度高，要求填充料保温隔热效果要好；2）环境气氛要求高，要求填充料杂质少，不能含有机物质；3）铂金管道壁很薄，在填充时极易损伤和变形，要求填充料的流动性要好，并具有适宜的塑性；4）使用过程铂金管道不能有大的移动，要求填充料在使用过程有一定的烧结强度，能起到很好的支撑作用；5）管道端头不能有大的空隙，要求填充料在一定条件下有适度的塑性，能起到密封作用。因此要求填充料应具有以下性能：1）保温隔热效果好；2）常温下具有很好的流动性、填充性；3）随温度的升高逐步烧结，并在工作温度范围内具有适宜的烧结强度；4）要求材料高纯度，不允许含铁、碳等杂质，不允许含有机结合剂，不能污染铂金；5）具有一定塑性，常温加入适量纯净水可形成潮湿泥团封闭管道端头空隙。
目前基板玻璃供料道常用的填充料大多是锆英石质或含有部分锆英石原料，但由于锆英石原料本身特性的限制，以锆英石原料制得的填充料常存在如下缺点：1）锆英石原料来源多样，即便是最好的锆英石精矿，其杂质含量仍然很高，主要有TiO2、Fe2O3、P2O5及碱金属等，容易污染铂金通道；2）锆英石在高温下容易发生分解，从1540℃开始缓慢分解，随着时间延长和温度升高，分解率逐渐增加，长期使用会一定程度影响填充料的高温结构稳定性，进而导致铂金管道变形；而这些缺点严重影响了铂金管道的使用寿命，可以说传统以锆英石为主原料的填充料已经很难满足熔融溢流法技术快速发展的要求。因此，研究开发一种具有保温隔热效果好、流动性好、塑性好、杂质少、不污染铂金管道，并能在高温下具有适宜烧结强度的新型填充料是熔融溢流法制备TFT-LCD基板玻璃技术的迫切需求，对正在迅速发展的TFT-LCD基板玻璃行业节能减排，节约成本具有十分重要的意义。
发明内容
本发明的目的在于提供一种TFT-LCD基板玻璃供料道用氧化锆质填充料，以解决传统填充料因杂质多、污染大、高温结构不稳定等导致铂金管道使用寿命低的问题。
本发明为完成其发明任务采用如下技术方案：
一种TFT-LCD基板玻璃供料道用氧化锆质填充料，作为熔融溢流法基板玻璃供料道用耐火材料；以电熔稳定氧化锆颗粒和氧化锆细粉为主原料、以活性α-Al2O3微粉和烧结氧化铝微粉作助烧剂，以白泥和硅微粉作增塑剂，经混和、磁选和包装后，即制得TFT-LCD基板玻璃供料道用氧化锆质填充料；所述氧化锆质填充料的原料及质量百分比为：电熔氧化锆颗粒75～85%，氧化锆细粉7～15%，活性α-Al2O3微粉和烧结氧化铝微粉4～8%，白泥和硅微粉2～4%；所述氧化锆质填充料中ZrO2+HfO2+稳定剂含量大于85%，Al2O3含量大于5%，SiO2含量小于5%。
所述电熔稳定氧化锆的粒度为1～0.05mm。
所述电熔稳定氧化锆的化学成分为ZrO2+HfO2+稳定剂≥98.5%。
所述的电熔稳定氧化锆颗粒为电熔Y2O3稳定氧化锆颗粒或电熔CaO稳定氧化锆颗粒。
所述的稳定剂为Y2O3或CaO。
所述氧化锆细粉的粒度为<0.047mm。
所述氧化锆细粉的化学成分为ZrO2+HfO2≥99.0%。
所述白泥的粒度为<0.06mm。
所述白泥的化学成分为Al2O3+SiO2≥83.5%。
所述活性α-Al2O3微粉和烧结氧化铝微粉的粒度为<3μm。
所述活性α-Al2O3微粉和烧结氧化铝微粉的化学成分为Al2O3≥99.3%。
所述硅微粉的粒度为<3μm。
所述硅微粉的化学成分为SiO2≥98.5%。
本发明提出的一种TFT-LCD基板玻璃供料道用氧化锆质填充料，具有以下特点：
（1）氧化锆具有使用温度高、热导率低、化学稳定性好、高温下不易分解、抗侵蚀性好等诸多优点，以高纯度的电熔稳定氧化锆颗粒和氧化锆细粉为主原料，可以大大降低填充料中的杂质含量，不污染铂金管道，同时提高填充料的隔热保温性能。
（2）α-Al2O3微粉和烧结氧化铝微粉具有较高活性，适量引入可促进填充料在高温时快速烧结，以提高其高温强度，增强其整体结构稳定性。
（3）白泥和硅微粉的引入，一方面是通过其自身活性促进填充料的高温烧结，另一方面二者都是很好的增塑剂，可以提高填充料的流动性和塑性，确保填充料借助较小的外力就能使其填充致密、均匀，不留下较大的空洞等缺陷，很好的保护铂金管道不损伤、不变形。
（4）该氧化锆质填充料在1200～1300℃开始逐步烧结，到1550℃～1650℃工作温度区间内具有较高烧结强度，长期使用无大的形变，整体结构稳定性好，对铂金管道及其内部的玻璃液起到很好的支撑固定作用；特殊情况下，当有玻璃液从铂金管道渗出时，该氧化锆质填充料也能很好抵御的玻璃液侵蚀，防止高温下玻璃液渗透情况进一步快速扩展。
具体实施方式
结合具体实施例对本发明加以说明：
实施例1：各组分的质量百分比为：1～0.05mm的电熔CaO稳定氧化锆颗粒 84%、<0.047mm的氧化锆细粉7%、<3μm的活性α-Al2O3微粉6%、<0.06mm的白泥2%、<3μm硅微粉1%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
实施例2：各组分的质量百分比为：1～0.05mm的电熔CaO稳定氧化锆颗粒 78%、<0.047mm的氧化锆细粉10%、<3μm的活性α-Al2O3微粉8%、<0.06mm的白泥2%、<3μm硅微粉2%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
实施例3：各组分的质量百分比为：1～0.05mm的电熔CaO稳定氧化锆颗粒 82%、<0.047mm的氧化锆细粉10%、<3μm的烧结氧化铝微粉5%、<0.06mm的白泥3%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
实施例4：各组分的质量百分比为：1～0.05mm的电熔CaO稳定氧化锆颗粒 81%、<0.047mm的氧化锆细粉9%、<3μm的活性α-Al2O3微粉6%、<0.06mm的白泥1%、<3μm硅微粉3%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
实施例5：各组分的质量百分比为：1～0.05mm的电熔CaO稳定氧化锆颗粒 75%、<0.047mm的氧化锆细粉14%、<3μm的烧结氧化铝微粉8%、<3μm硅微粉3%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
实施例6：各组分的质量百分比为：1～0.05mm的电熔Y2O3稳定氧化锆颗粒 80%、<0.047mm的氧化锆细粉12%、<3μm的活性α-Al2O3微粉4%、<0.06mm的白泥3%、<3μm硅微粉1%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
实施例7：各组分的质量百分比为：1～0.05mm的电熔Y2O3稳定氧化锆颗粒 78%、<0.047mm的氧化锆细粉14%、<3μm的烧结氧化铝微粉4%、<0.06mm的白泥4%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
实施例8：各组分的质量百分比为：1～0.05mm的电熔Y2O3稳定氧化锆颗粒 81%、<0.047mm的氧化锆细粉10%、<3μm的烧结氧化铝微粉5%、<0.06mm的白泥2%，<3μm硅微粉2%，经混和、磁选和包装后，制得一种TFT-LCD基板玻璃供料道用氧化锆质填充料。
Claims (5)
1.一种TFT-LCD基板玻璃供料道用氧化锆质填充料，其特征在于：作为熔融溢流法基板玻璃供料道用耐火材料；以电熔稳定氧化锆颗粒和氧化锆细粉为主原料、以活性α-Al2O3微粉和烧结氧化铝微粉作助烧剂，以白泥和硅微粉作增塑剂，经混和、磁选和包装后，即制得TFT-LCD基板玻璃供料道用氧化锆质填充料；所述氧化锆质填充料的原料及质量百分比为：电熔稳定氧化锆颗粒75～85%，氧化锆细粉7～15%，活性α-Al2O3微粉和烧结氧化铝微粉4～8%，白泥和硅微粉2～4%；所述氧化锆质填充料中ZrO2 +HfO2+稳定剂含量大于85%，Al2O3含量大于5%，SiO2含量小于5%。
2.根据权利要求1所述的一种TFT-LCD基板玻璃供料道用氧化锆质填充料，其特征在于：所述电熔稳定氧化锆的粒度为1～0.05mm；所述氧化锆细粉的粒度为<0.047mm；所述白泥的粒度为<0.06mm；所述活性α-Al2O3微粉和烧结氧化铝微粉的粒度为<3μm；所述硅微粉的粒度为<3μm。
3.根据权利要求1所述的一种TFT-LCD基板玻璃供料道用氧化锆质填充料，其特征在于：所述电熔稳定氧化锆的化学成分为ZrO2 +HfO2+稳定剂≥98.5%；所述氧化锆细粉的化学成分为ZrO2 +HfO2≥99.0%；所述白泥的化学成分为Al2O3+SiO2≥84.5%；所述活性α-Al2O3微粉和烧结氧化铝微粉的化学成分为Al2O3≥99.3%；所述硅微粉的化学成分为SiO2≥98.5%。
4.根据权利要求1所述的一种TFT-LCD基板玻璃供料道用氧化锆质填充料，其特征在于：所述的电熔稳定氧化锆颗粒为电熔Y2O3稳定氧化锆颗粒或电熔CaO稳定氧化锆颗粒。
5.根据权利要求1所述的一种TFT-LCD基板玻璃供料道用氧化锆质填充料，其特征在于：所述的稳定剂为Y2O3或CaO。
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