CN114377929A - Transducer probe, manufacturing method and medical equipment - Google Patents

Abstract

The present application provides a transducer probe, a manufacturing method and medical equipment. The transducer probe includes a base chip, an insulating layer, a bi-piezoelectric layer and a conductive component. An insulating layer covers the upper surface of the base chip. The piezoelectric bilayer is arranged on the upper surface of the insulating layer, and includes a pressure layer, an ultrasonic layer, and an isolation layer located between the pressure layer and the ultrasonic layer and capable of shielding signal interference between the ultrasonic layer and the pressure layer; the ultrasonic layer is located in the middle of the pressure layer and the ultrasonic layer. above the pressure layer. The conductive components include a first conductive component for electrically connecting the base chip and the pressure layer and a second conductive component for electrically connecting the base chip and the ultrasonic layer. In the present application, the pressure layer with pressure detection and the ultrasonic layer with ultrasonic imaging function are arranged in a transducer probe structure, and the pressure signal and the ultrasonic signal are detected synchronously and independently, so ultrasonic imaging can be performed simultaneously with the pressure detection, Expand the function of the product and broaden the application scenarios.

Description

Transducer probe, manufacturing method and medical equipment

technical field

The present application relates to the technical field of transducers, and in particular, to a transducer probe and medical equipment using the transducer probe.

Background technique

A pressure transducer is an energy conversion device that can sense pressure signals and convert them into electrical signals. Its core components are pressure sensitive elements, such as piezoelectric wafers, and various pressure transducers are now widely used in industry, life and medical fields.

An ultrasonic transducer is an energy conversion device that converts alternating electrical signals into acoustic signals or converts external acoustic signals into electrical signals in the ultrasonic frequency range. Due to the penetrating nature of ultrasonic waves, it can penetrate the surface of objects, and can detect the internal structure of objects non-destructively through changes in the echo signals of ultrasonic waves when they encounter interfaces and obstacles.

When both the pressure transducer and the ultrasonic transducer are required to be used in a usage scenario, the pressure transducer and the ultrasonic transducer are respectively tested accordingly. Replacing different testing equipment will inevitably cost more time for instrument installation and testing. Since the core components of the pressure transducer and the ultrasonic transducer are both pressure sensitive elements and are used to detect signals of different frequencies, how to provide a detection device that has both a pressure transducer and an ultrasonic transducer has become a problem in the art The focus of the research.

SUMMARY OF THE INVENTION

The purpose of the embodiments of the present application is to provide a transducer probe, which has the functions of pressure detection and ultrasonic imaging at the same time, can expand the function of the product, and widen the scope of application.

In a first aspect, a transducer probe is provided, comprising:

base chip;

an insulating layer covering the upper surface of the base chip;

A double piezoelectric layer is arranged on the upper surface of the insulating layer, and includes a pressure layer, an ultrasonic layer, and an isolation layer located between the pressure layer and the ultrasonic layer and capable of shielding signal interference between the ultrasonic layer and the pressure layer; the ultrasonic layer above the pressure layer;

The conductive component includes a first conductive component for electrically connecting the base chip and the pressure layer and a second conductive component for electrically connecting the base chip and the ultrasonic layer.

In an implementable solution, the piezoelectric bilayer includes:

A first electrode layer, disposed on the upper surface of the insulating layer and having an area smaller than that of the insulating layer, includes a first electrode body and a first rib; the first rib is electrically connected to the first electrode body and serve as the lead-out end of the first electrode body;

a pressure piezoelectric layer, which is arranged on the insulating layer and covers the first electrode layer, and a plurality of piezoelectric transducer units arranged in an array are arranged on the pressure piezoelectric layer;

an intermediate layer, arranged on the upper surface of the pressure piezoelectric layer and having an area smaller than that of the pressure piezoelectric layer;

an ultrasonic piezoelectric layer, disposed on the intermediate layer and covering the intermediate layer, for generating ultrasonic signals;

A fourth electrode layer, arranged on the upper surface of the ultrasonic piezoelectric layer and having an area smaller than that of the ultrasonic piezoelectric layer, includes a fourth electrode body and a fourth rib; the fourth rib and the fourth The electrode body is electrically connected and serves as the lead-out end of the fourth electrode body;

The intermediate layer is configured to shield signal interference between the ultrasonic piezoelectric layer and the pressure piezoelectric layer, and to form the pressure layer with the pressure piezoelectric layer and the first electrode layer and to The pressure signal generated by the pressure piezoelectric layer is transmitted to the base chip; and the ultrasonic layer is formed with the ultrasonic piezoelectric layer and the fourth electrode layer and the ultrasonic signal generated by the ultrasonic piezoelectric layer is transmitted to the base chip.

In an implementable solution, the intermediate layer includes:

The second electrode layer includes a second electrode body and a second rib; the second rib is electrically connected to the second electrode body and serves as a lead-out end of the second electrode body; the second electrode layer is located at the directly above the first electrode layer;

The portion of the ultrasonic piezoelectric layer in contact with the second electrode layer is polarized, and the portion in contact with the pressure piezoelectric layer is not polarized.

In another feasible solution, the intermediate layer includes:

A second electrode layer, disposed on the upper surface of the pressure piezoelectric layer and having an area smaller than that of the pressure piezoelectric layer, includes a second electrode body and a second rib; the second rib and the second The electrode body is electrically connected and serves as the lead-out end of the second electrode body;

the isolation layer;

A third electrode layer, located above the isolation layer, includes a third electrode body and a third rib, the third rib is electrically connected to the third electrode body and serves as a lead-out end of the third electrode body ; The ultrasonic piezoelectric layer is arranged on the isolation layer and covers the third electrode layer;

The first electrode layer and the second electrode layer are used for transmitting the pressure signal generated by the piezoelectric transducer unit to the base chip, and the third electrode layer and the fourth electrode layer are used for The ultrasonic signal generated by the ultrasonic transducer unit is transmitted to the base chip.

In an implementable solution, a first contact point, a second contact point and a fourth contact point are configured on the base chip;

The first contact point and the first rib are connected through a first conductive column; the second contact point and the second rib are connected through a second conductive column; the fourth contact point and the fourth rib are connected through a fourth Conductive column connection;

The first conductive column, the second conductive column, and the fourth conductive column all pass through the piezoelectric bilayer and avoid the first electrode layer, the second electrode layer, and the fourth electrode layer;

The first contact point, the first conductive column, the second contact point and the second conductive column constitute the first conductive component; the second contact point, the second conductive column, the fourth contact point and the fourth conductive column constitute the second conductive component.

In an implementable solution, the cross-sectional area of the first conductive column is smaller than the cross-sectional area of the first rib; the cross-sectional area of the second conductive column is smaller than the cross-sectional area of the second support rib; the fourth conductive column The cross-sectional area of the column is smaller than the cross-sectional area of the third rib.

In an implementable solution, the first electrode layer, the fourth electrode layer, the second electrode layer in the intermediate layer, or the second electrode layer in the intermediate layer and the third electrode layer are all etched with incentive layer.

In an implementable solution, the transducer probe further includes a protective layer disposed above the ultrasonic piezoelectric layer and covering the fourth electrode layer;

In one possible implementation, the thickness of the ultrasonic piezoelectric layer is different from the thickness of the piezoelectric piezoelectric layer.

According to the second aspect of the present application, there is also provided a medical device, comprising the transducer probe of any one of the above structures.

According to a third aspect of the present application, a method for manufacturing a transducer probe is also provided, including:

Forming a base chip based on a CMOS process;

forming an insulating layer on the surface of the base chip;

A pressure layer, an isolation layer and an ultrasonic layer are sequentially deposited on the surface of the insulating layer from bottom to top; the isolation layer is used to shield signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer The layer and the ultrasonic layer constitute a double piezoelectric layer;

A first conductive member for electrically connecting the base chip and the pressure layer is provided between the base chip and the pressure layer, and between the base chip and the ultrasonic layer for electrically connecting the The base chip and the second conductive component of the ultrasonic layer; the first conductive component and the second conductive component constitute the conductive component of the transducer probe.

In one embodiment, the fabrication process of the piezoelectric bilayer includes:

Making the piezoelectric layer: depositing a layer of metal material on the surface of the insulating layer as the first electrode layer; depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer; A layer of metal material is deposited on the piezoelectric layer as the second electrode layer;

Making the isolation layer: depositing a layer of isolation layer on the second electrode layer, the thickness of the isolation layer is an odd multiple of a quarter ultrasonic wavelength;

Making the ultrasonic layer: depositing a layer of metal material on the isolation layer as the third electrode layer; coating the ultrasonic piezoelectric layer on the third electrode layer; the ultrasonic piezoelectric layer is in contact with the third electrode layer The part that is not in contact with the third electrode layer is not polarized; a layer of metal material is deposited on the ultrasonic piezoelectric layer as the fourth electrode layer.

In another embodiment, the fabrication process of the piezoelectric bilayer includes:

depositing a layer of metal material on the surface of the insulating layer as the first electrode layer;

depositing a piezoelectric piezoelectric layer on the insulating layer and the first electrode layer;

depositing a layer of metal material on the pressure piezoelectric layer as a second electrode layer, and the second electrode layer is located directly above the first electrode layer;

Coating an ultrasonic piezoelectric layer above the second electrode layer; the part of the ultrasonic piezoelectric layer in contact with the second electrode layer is polarized, and the part not in contact with the second electrode layer is not polarized;

A layer of metal material is deposited on the ultrasonic piezoelectric layer as a fourth electrode layer.

In one embodiment, the conductive component electrically connects the base chip and the pressure layer, and the method of electrically connecting the base chip and the ultrasonic layer includes:

providing first to fourth contact points on the base chip;

The first electrode layer includes a first electrode body and a first rib that are separated by a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated by a predetermined distance and are electrically connected; the third electrode layer includes a distance a third electrode body and a third rib that are electrically connected with a predetermined distance; the fourth electrode layer includes a fourth electrode body and a fourth rib that are separated by a predetermined distance and are electrically connected; the first rib, the second rib, the third rib The support rib and the fourth support rib are dislocated;

In the area where the first rib is opposite to the first contact point, the area where the second rib is opposite to the second contact point, the area where the third rib and the third contact point are opposite, and the fourth rib and the fourth contact point In the opposite area, a first through hole, a second through hole, a third through hole and a fourth through hole are formed;

The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib, the insulating layer, and makes the first contact point leak out; the second through hole passes through the isolation layer, the second support rib, the pressure The piezoelectric layer, the insulating layer and the second contact point leak out; the third through hole passes through the ultrasonic piezoelectric layer, the third rib, the pressure layer, and the insulating layer and causes the third contact point to leak out, and the fourth through hole passes through the third contact point. Four rib, ultrasonic piezoelectric layer, fourth rib, pressure piezoelectric layer, insulating layer and make the fourth contact point leak out;

depositing a conductive medium in and over the first, second, third, and fourth vias to form first, second, third, and fourth conductive pillars;

The first conductive column and the second conductive column are used to electrically connect the base chip and the pressure piezoelectric layer; the third conductive column and the fourth conductive column are used to electrically connect the base chip and the ultrasonic piezoelectric layer.

In one embodiment, the conductive component electrically connects the base chip and the pressure layer, and the method of electrically connecting the base chip and the ultrasonic layer includes:

disposing a first contact point, a second contact point and a fourth contact point on the base chip;

The first electrode layer includes a first electrode body and a first rib that are separated by a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated by a predetermined distance and are electrically connected; the fourth electrode layer includes a distance a fourth electrode body and a fourth rib that are electrically connected at a predetermined distance; the first rib, the second rib and the fourth rib are dislocated;

In the area where the first rib is opposite to the first contact point, the area where the second branch rib is opposite to the second contact point, and the area where the fourth branch rib is opposite to the fourth contact point, a first through hole and a second through hole are formed. hole and fourth through hole;

The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib, and the insulating layer and allows the first contact point to leak out; the second through hole passes through the ultrasonic piezoelectric layer, the second support rib , pressure piezoelectric layer, insulating layer and make the second contact point leak out; the fourth through hole passes through the fourth support rib, ultrasonic piezoelectric layer, second support rib, pressure piezoelectric layer, insulating layer and makes the fourth contact point leakage;

A conductive medium is deposited in and over the first, second, and fourth vias to form first, second, and fourth conductive pillars.

In a further embodiment, the method of making the transducer probe further comprises:

A protective layer is deposited above the ultrasonic layer; the protective layer covers the ultrasonic piezoelectric layer, the fourth electrode layer and the top of each conductive column.

As can be seen from the above technical solutions, the present application arranges the pressure layer with pressure detection and the ultrasonic layer with ultrasonic imaging function in a transducer probe structure, and the pressure signal and the ultrasonic signal are independently detected synchronously. Ultrasound imaging can be performed, thereby expanding the function of the product and broadening the application scenarios.

Description of drawings

In order to illustrate the technical solutions of the embodiments of the present application more clearly, the following drawings will briefly introduce the drawings that need to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore do not It should be regarded as a limitation of the scope, and for those of ordinary skill in the art, other related drawings can also be obtained according to these drawings without any creative effort.

1 is a schematic structural diagram of a transducer probe according to an embodiment of the present application;

2 is a schematic structural diagram of another transducer probe according to an embodiment of the present application;

Figure 3 is a cross-sectional view of the transducer probe shown in Figure 2;

4 to 13 are schematic structural diagrams of implementing the steps from the first step to the tenth step of the transducer probe shown in FIG. 2 .

Detailed ways

In order to make the purposes, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of the present application, but not all of the embodiments. The components of the embodiments of the present application generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.

Thus, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the application as claimed, but is merely representative of selected embodiments of the application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

FIG. 1 is a schematic structural diagram of a transducer probe according to an embodiment of the present application. Referring to FIG. 1 , the transducer probe includes a base chip 100 , an insulating layer 200 , a piezoelectric bilayer 300 and conductive components.

The insulating layer 200 covers the upper surface of the base chip 100 . The piezoelectric bilayer 300 is disposed on the upper surface of the insulating layer 200. The piezoelectric bilayer 300 includes a pressure layer 310, an ultrasonic layer 320, and an isolation layer 330 located between the pressure layer 310 and the ultrasonic layer 320. The ultrasonic layer 320 is located above the pressure layer 310 . The pressure layer 310 is used for pressure detection, and the ultrasonic layer 320 is used for ultrasonic imaging. The isolation layer 330 is used for shielding the signal interference between the ultrasonic layer 320 and the pressure layer 310, so as to ensure that both can function normally. The conductive components include a first conductive component for electrically connecting the base chip 100 and the pressure layer 310 and a second conductive component for electrically connecting the base chip 100 and the ultrasonic layer 320 .

Since the core components of the pressure transducer and the ultrasonic transducer are both pressure sensitive elements and are used to detect signals of different frequencies, in the above implementation process, the present application will have a pressure layer 310 for pressure detection and an ultrasonic imaging function. The ultrasonic layer 320 is arranged in a transducer probe structure, and the pressure signal and the ultrasonic signal are detected synchronously and independently, so that the transducer probe in this application can perform ultrasonic imaging at the same time as the pressure detection, thereby expanding the product range. functions, broadening the application scenarios.

In an embodiment, the pressure layer 310 includes a first electrode layer 311 , a pressure piezoelectric layer 312 and a second electrode layer 313 . The first electrode layer 311 is disposed on the upper surface of the insulating layer 200 and has an area smaller than that of the insulating layer 200 , and includes a first electrode body and a first rib 314 . The first rib 314 is electrically connected to the first electrode body and serves as the first electrode body. The terminal of the electrode body. The pressure piezoelectric layer 312 is disposed on the insulating layer 200 and covers the first electrode layer 311, and several piezoelectric transducer units (not shown in the figure) arranged in an array are arranged on the pressure piezoelectric layer 312. The second electrode layer 313 is disposed on the upper surface of the pressure piezoelectric layer 312 and has an area smaller than that of the pressure piezoelectric layer 312 , and includes a second electrode body and a second rib 315 ; the second rib 315 is electrically connected to the second electrode body and serve as the lead-out end of the second electrode body. When the pressure piezoelectric layer 312 receives pressure, the first electrode layer 311 and the second electrode layer 313 are used to transmit the pressure signal generated by the piezoelectric transducer unit to the base chip 100 .

The ultrasonic layer 320 includes a third electrode layer 321 , an ultrasonic piezoelectric layer 322 and a fourth electrode layer 323 . The third electrode layer 321 is located above the isolation layer 330 and includes a third electrode body and a third rib 324. The third rib 324 is electrically connected to the third electrode body and serves as a lead-out end of the third electrode body. The ultrasonic piezoelectric layer 322 is disposed on the isolation layer 330 and covers the third electrode layer 321 . The fourth electrode layer 323 is disposed on the upper surface of the ultrasonic piezoelectric layer 322 and has an area smaller than that of the ultrasonic piezoelectric layer 322, and includes a fourth electrode body and a fourth rib 325; the fourth rib 325 is electrically connected to the fourth electrode body and serve as the lead-out end of the fourth electrode body. When the ultrasonic piezoelectric layer 322 receives pressure, the third electrode layer 321 and the fourth electrode layer 323 are used to transmit the ultrasonic signal generated by the ultrasonic transducer unit to the base chip 100 .

In this embodiment, the second electrode layer 313, the isolation layer 330, and the third electrode layer 321 constitute an intermediate layer.

In another feasible solution, the intermediate layer only includes the second electrode layer, and the functions of the second electrode layer in this embodiment are the same as those of the second electrode layer 313 , the isolation layer 330 and the third electrode layer in the previous embodiment. The function of the electrode layer 321 is the same. FIG. 2 is a schematic structural diagram of another transducer probe according to an embodiment of the present application. FIG. 3 is a cross-sectional view of the transducer probe shown in FIG. 2 . 2 and 3, the second electrode layer 313 is located directly above the first electrode layer 311, and the part of the ultrasonic piezoelectric layer 322 in contact with the second electrode layer 313 is polarized, and the part in contact with the pressure piezoelectric layer 312 is not polarization.

In an implementable solution, the base chip 100 is provided with a first contact point 110 , a second contact point 120 (coinciding with the third contact point 130 ) and a fourth contact point 140 . The first contact point 110 and the first rib 314 are connected through the first conductive column 500; the second contact point 120 and the second rib 315 are connected through the second conductive column 600 (overlapping the third conductive column 700); the fourth contact The dots 140 are connected to the fourth rib 325 through the fourth conductive pillar 800 . The first conductive column 500 , the second conductive column 600 , and the fourth conductive column 800 pass through the piezoelectric bilayer 300 and avoid the first electrode layer 311 , the second electrode layer 313 and the fourth electrode layer 323 . The first contact point 110, the first conductive pillar 500, the second contact point 120 and the second conductive pillar 600 constitute a first conductive component; the second contact point 120, the second conductive pillar 600, the fourth contact point 140 and the fourth conductive element Post 800 constitutes a second conductive component.

In an implementable solution, the cross-sectional area of the first conductive pillar 500 is smaller than the cross-sectional area of the first rib 314 ; the cross-sectional area of the second conductive pillar 600 is smaller than the cross-sectional area of the second rib 315 ; the fourth conductive pillar 800 The cross-sectional area of is smaller than the cross-sectional area of the fourth rib 325 .

In an implementable solution, an excitation layer is etched on the first electrode layer 311 , the second electrode layer 313 , the third electrode layer 321 and the fourth electrode layer 323 .

In an implementable solution, the transducer probe further includes a protective layer 400 disposed above the ultrasonic piezoelectric layer 322 and covering the fourth electrode layer 323.

In the solution implemented in the present application, the thickness of the ultrasonic piezoelectric layer 322 and the thickness of the pressure piezoelectric layer 312 may be the same or different.

According to an aspect of the present application, there is also provided a method for making a transducer probe, comprising:

Forming a base chip based on a CMOS process;

forming an insulating layer on the surface of the base chip;

The pressure layer, the isolation layer and the ultrasonic layer are sequentially deposited on the surface of the insulating layer from bottom to top; the isolation layer is used to shield the signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer and the ultrasonic layer constitute a double piezoelectric layer;

A first conductive component for electrically connecting the substrate chip and the pressure layer is disposed between the base chip and the pressure layer, and a second conductive component for electrically connecting the base chip and the ultrasonic layer is disposed between the base chip and the ultrasonic layer; the first conductive component is disposed between the base chip and the ultrasonic layer. A conductive component and the second conductive component constitute the conductive component of the transducer probe.

Specifically, the manufacturing process of the transducer probe structure shown in FIG. 1 is provided below, including:

1) A signal processor base chip 100 is formed based on a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) process, and the base chip 100 is based on a silicon wafer, a glass or a substrate of other materials. The base chip 100 is provided with four contact points, namely the first contact point 110, the second contact point 120, the third contact point 130, and the fourth contact point 140, which can be regarded as four I/O ports of the CMOS chip.

2), an insulating layer 200 is formed on the surface of the base chip 100. The insulating layer 200 can be silicon dioxide or other various insulating materials in the field. The insulating layer 200 in this embodiment is made of polyimide (polyimide, PI). .

3) After completing step 2), a layer of metal material is deposited on the surface of the insulating layer 200 as the first electrode layer 311, and a patterning process is performed to etch the first electrode layer 311 of the excitation layer. The first electrode layer 311 includes a first electrode body and a first rib 314. The first rib 314 can be regarded as the leading end of the first electrode layer 311. The first electrode body is connected to one end of the first rib 314. The first The rib 314 is used for electrical connection with the first contact point 110 in the base chip 100 . In the embodiment of the present application, the material of the first electrode layer 311 may be a conductive material such as metal, metal silicide, metal nitride, metal oxide, or conductive carbon. For example, the material of the first electrode layer 311 can be, for example, Mo, Al, Cu, Ag, Au, Ni, Co, TiAl, TiN, TaN, or the like. In addition, the selection of metal materials mentioned below can refer to the description in this section, and will not be repeated.

4) After completing step 3), a pressure piezoelectric layer 312 is deposited on the insulating layer 200 and the first electrode layer 311. The piezoelectric layer can be formed by physical vapor deposition, chemical vapor deposition, screen printing, etc., and the piezoelectric material can be For piezoelectric crystals, piezoelectric ceramics or piezoelectric polymers. At the same time, when several piezoelectric transducer units are arranged in an array, the piezoelectric layers between the several piezoelectric transducer units may be continuous. The piezoelectric material used in this embodiment is lead zirconate titanate (PZT).

5) After completing step 4), referring to step 3), deposit a layer of metal material on the pressure piezoelectric layer 312 as an electrode, and perform patterning treatment to obtain the second electrode layer 313. The second electrode layer 313 includes a second electrode body and a second rib 315. The second electrode body serves as the upper electrode of the pressure piezoelectric layer 312. The second rib 315 can be regarded as the leading end of the second electrode layer 313. The electrode body is connected to one end of the second rib 315 , and the second rib 315 is used for electrical connection with the second contact point 120 in the base chip 100 . When used for pressure detection, the first electrode layer 311 and the second electrode layer 313 can be electrically connected to the first contact point 110 and the second contact point 120 of the base chip 100, respectively, so as to receive the pressure signal and transmit the pressure signal to the base chip 100. base chip 100

6) After completing step 5), deposit an isolation layer on the second electrode layer 313, and the isolation layer is made of metal, ceramic or other high-impedance materials, or low-impedance materials such as air. The isolation layer is used as the signal isolation layer 330, and the ultrasonic layer 320 is located above the pressure layer 310. In the propagation path of the ultrasonic wave, when the acoustic impedance between the film layers is mismatched, and the thickness of the isolation layer is an odd multiple of a quarter of the ultrasonic wave wavelength When the ultrasonic wave is almost completely reflected at the interface of the isolation layer, the ultrasonic wave transmitted from the ultrasonic piezoelectric layer 322 is almost totally reflected at the interface of the isolation layer, and will not propagate downward to the pressure layer 310, thereby avoiding the pressure piezoelectric layer 312. The detection of pressure signals is disturbed by ultrasonic waves.

7) After completing step 6), a layer of metal material is deposited on the isolation layer as an electrode, and a patterning process is performed to obtain a third electrode layer 321 . The third electrode layer 321 includes a third electrode body and a third rib 324. The third electrode body is used as the lower electrode of the ultrasonic layer 320. The third rib 324 can be regarded as the lead end of the third electrode layer 321. The electrode body is connected to one end of the third rib 324 , and the third rib 324 is used for electrical connection with the third contact point 130 in the base chip 100 .

8), after completing 7), coat the ultrasonic piezoelectric layer 322 above the third electrode layer 321, the material and thickness of the ultrasonic piezoelectric layer 322 can be the same as the pressure piezoelectric layer 312, or can be different. In this embodiment, the piezoelectric material is vinylidene fluoride-trifluoroethylene copolymer (PVDF-Tri). After coating the ultrasonic piezoelectric layer 322, in-situ polarization is performed. Parts of the electrodes cannot be polarized, the polarized ultrasonic piezoelectric layer 322 has piezoelectric properties, and the remaining unpolarized piezoelectric layer regions do not have piezoelectric properties.

9) After completing 8), refer to step 3) to deposit a layer of metal material as an electrode layer, and perform a patterning process to etch the fourth electrode layer 323 of the excitation layer. The fourth electrode layer 323 includes a fourth electrode body and a fourth rib 325. The fourth electrode body is used as the upper electrode of the ultrasonic layer 320. The fourth rib 325 can be regarded as the leading end of the fourth electrode layer 323. The electrode body is connected to one end of the fourth rib 325 , and the fourth rib 325 is used for electrical connection with the fourth contact point 140 in the base chip 100 .

10) After completing 9), perform an etching process, and in the area where the first rib 314 is opposite to the first contact point 110, and the area where the second rib 315 is opposite to the second contact point 120, the third rib 324 A first through hole, a second through hole, a third through hole and a fourth through hole are formed in the area opposite to the third contact point 130 and the area opposite to the fourth support rib 325 and the fourth contact point 140 . The first through hole passes through the ultrasonic piezoelectric layer 322, the pressure piezoelectric layer 312, the first rib 314, and the insulating layer 200, and leaks out of the corresponding first contact point 110 of the base chip 100, and the second through hole passes through the isolation layer, The second rib 315 , the pressure piezoelectric layer 312 , and the insulating layer 200 leak out from the corresponding second contact point 120 of the base chip 100 . The third through hole passes through the ultrasonic piezoelectric layer 322 , the third rib 324 , the pressure layer 310 , and the insulating layer 200 , and leaks out of the corresponding third contact point 130 of the base chip 100 , and the fourth through hole passes through the fourth rib 325 , the ultrasonic piezoelectric layer 322 , the fourth rib 325 , the pressure piezoelectric layer 312 , and the insulating layer 200 , leak out the corresponding fourth contact point 140 of the base chip 100 . In this embodiment, through the control of the through hole fabrication process, The first through hole preferably leaks out of at least part of the upper surface of the first rib 314 so as to enhance the contact area between the subsequent first rib 314 and the conductive medium. Likewise, the second through hole, the third through hole, and the fourth through hole all leak out at least part of the upper surface of the corresponding support rib, so as to enhance the subsequent contact area with the conductive medium.

11) After completing 10), a conductive medium is deposited inside and above the first through hole, the second through hole, the third through hole and the fourth through hole, and the conductive medium fills the first through hole, the second through hole, The third through hole and the fourth through hole. In this embodiment, the conductive medium is aluminum, which is formed by physical vapor deposition, and the conductive medium can also be other conductive materials. After the conductive medium is deposited, a patterning process is performed to remove the first through hole, part of the conductive medium outside the second through hole, the third through hole, and the fourth through hole, and the first conductive column fills the first through hole 500, the second conductive pillar 600 is filled with the second through hole, the third conductive pillar 700 is filled with the third through hole, and the fourth conductive pillar 800 is filled with the fourth through hole. The first conductive pillar 500 is in electrical contact with the first contact point 110 of the base chip 100 and the first rib 314 respectively, so as to electrically connect the first contact point 110 of the base chip 100 with the first electrode layer 311 and the second conductive pillar 600 They are in electrical contact with the second contact point 120 and the second rib 315 of the base chip 100 respectively, thereby electrically connecting the second contact point 120 of the base chip 100 with the second electrode layer 313 , and the third conductive pillar 700 is respectively connected with the base chip 100 The third contact point 130 is in electrical contact with the third rib 324 , thereby electrically connecting the third contact point 130 of the base chip 100 with the third electrode layer 321 , and the fourth conductive pillar 800 is respectively connected with the fourth contact point of the base chip 100 The 140 is in electrical contact with the fourth rib 325 so as to electrically connect the fourth contact point 140 of the base chip 100 with the fourth electrode layer 323 . Using the first conductive pillar 500 and the second conductive pillar 600, the electrical connection between the circuit unit of the substrate chip 100 and the pressure piezoelectric layer 312 above is realized, that is, the connection between the signal processor substrate and the pressure transducer is realized. electrical connection between. Using the third conductive pillar 700 and the fourth conductive pillar 800, the electrical connection between the circuit unit of the substrate chip 100 and the ultrasonic piezoelectric layer 322 is realized, that is, the connection between the signal processor substrate and the ultrasonic transducer is realized. Electrical connection.

12) After completing 11), a protective layer 400 is deposited on the top of the chip, and the protective layer 400 covers the ultrasonic piezoelectric layer 322, the fourth electrode layer 323, the first conductive column 500, the second conductive column 600 and the third conductive column 700. The protective layer 400 can be deposited using deposition processes known in the art. On the one hand, the protective layer 400 can play a role in sealing and insulating the piezoelectric layer, and on the other hand, the protective layer 400 can also serve as a matching layer for the pixel structure of the ultrasonic transducer. Therefore, the first electrode layer 311 , the second electrode layer 313 , the third electrode layer 321 , the fourth electrode layer 323 , the pressure piezoelectric layer 312 , the ultrasonic piezoelectric layer 322 , and the protective layer 400 cooperate to form a circuit corresponding to the base chip 100 The pressure and ultrasonic bilayer 300 transducer pixel structure formed by the unit. The optimal combination of the thicknesses and plane dimensions of the above-mentioned layers can obtain an ideal resonant frequency and higher sensitivity. In this embodiment, the material of the protective layer 400 is silicon rubber, and may also be other insulating materials or combinations in the field.

The manufacturing process of the transducer probe structure shown in FIG. 2 is provided below. The fabrication process of the transducer probe structure shown in Figure 2 is partially the same as the fabrication process of the transducer probe structure shown in Figure 1, except that the number of contact points and the number of electrode layers are different, as follows:

1) A signal processor base chip 100 is formed based on a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) process, and the base chip 100 is based on a silicon wafer, a glass or a substrate of other materials. The base chip 100 is provided with three contact points, namely the first contact point 110, the second contact point 120, and the fourth contact point 140, which can be regarded as three I/O ports of the CMOS chip. See Figure 3.

2), an insulating layer 200 is formed on the surface of the base chip 100. Referring to FIG. 4, the insulating layer 200 can be silicon dioxide or other various insulating materials in the field. The insulating layer 200 in this embodiment is made of polyimide (polyimide). polyimide, PI).

3) After completing step 2), a layer of metal material is deposited on the surface of the insulating layer 200 as the first electrode layer 311, and a patterning process is performed to etch the first electrode layer 311 of the excitation layer, see FIG. 6 . The first electrode layer 311 includes a first electrode body and a first rib 314. The first rib 314 can be regarded as the leading end of the first electrode layer 311. The first electrode body is connected to one end of the first rib 314. The first The rib 314 is used for electrical connection with the first contact point 110 in the base chip 100 . In the embodiment of the present application, the material of the first electrode layer 311 may be a conductive material such as metal, metal silicide, metal nitride, metal oxide, or conductive carbon. For example, the material of the first electrode layer 311 can be, for example, Mo, Al, Cu, Ag, Au, Ni, Co, TiAl, TiN, TaN, or the like. In addition, the selection of metal materials mentioned below can refer to the description in this section, and will not be repeated.

4) After completing the step 3), the pressure piezoelectric layer 312 is deposited on the insulating layer 200 and the first electrode layer 311, see FIG. 7 . The piezoelectric layer can be formed by physical vapor deposition, chemical vapor deposition, screen printing, etc. The piezoelectric material can be piezoelectric crystal, piezoelectric ceramic or piezoelectric polymer. At the same time, when several piezoelectric transducer units are arranged in an array, the piezoelectric layers between the several piezoelectric transducer units may be continuous. The piezoelectric material used in this embodiment is lead zirconate titanate (PZT).

5) After completing step 4), referring to step 3), a layer of metal material is deposited on the pressure piezoelectric layer 312 as an electrode, and patterning is performed to obtain a second electrode layer 313, see FIG. 8 . The second electrode layer 313 includes a second electrode body and a second rib 315. The second electrode body serves as the upper electrode of the piezoelectric layer 312. The electrode body is connected to one end of the second rib 315 , and the second rib 315 is used for electrical connection with the second contact point 120 in the base chip 100 . When used for pressure detection, the first electrode layer 311 and the second electrode layer 313 can be electrically connected to the first contact point 110 and the second contact point 120 of the base chip 100, respectively, so as to receive the pressure signal and transmit the pressure signal to the base chip 100. The base chip 100 . In this embodiment, the second electrode layer 313 combines the functions of the second electrode layer 313 , the isolation layer and the third electrode layer 321 in the previous embodiment, that is, in addition to being the upper electrode of the pressure piezoelectric layer 312 , can also be used as the lower electrode of the following ultrasonic piezoelectric layer 322, and as the signal isolation layer 330. In the propagation path of the ultrasonic wave, when the acoustic impedance between the film layers is mismatched, and the thickness of the isolation layer is a quarter of the ultrasonic wave wavelength At odd times, the ultrasonic wave is almost completely reflected at the interface of the isolation layer, so the ultrasonic wave transmitted from the ultrasonic piezoelectric layer 322 is almost completely reflected at the interface of the second electrode layer 313, and will not propagate downward to the pressure piezoelectric layer 312. Therefore, the interference of the ultrasonic wave when the pressure piezoelectric layer 312 detects the pressure signal is avoided.

6) After completing step 5), the ultrasonic piezoelectric layer 322 is coated on the second electrode layer 313, see FIG. 9 . The material and thickness of the ultrasonic piezoelectric layer 322 may be the same as or different from those of the pressure piezoelectric layer 312 . In this embodiment, the piezoelectric material is vinylidene fluoride-trifluoroethylene copolymer (PVDF-Tri). After coating the ultrasonic piezoelectric layer 322, in-situ polarization is performed. Parts of the electrodes cannot be polarized, the polarized ultrasonic piezoelectric layer 322 has piezoelectric properties, and the remaining unpolarized piezoelectric layer regions do not have piezoelectric properties.

7) After completing step 6), refer to step 3) to deposit a layer of metal material as an electrode layer, and perform a patterning process to etch the fourth electrode layer 323 of the excitation layer. Referring to FIG. 10 , the fourth electrode layer 323 includes a fourth electrode body and a fourth rib 325 , the fourth electrode body is used as the upper electrode of the ultrasonic layer 320 , and the fourth rib 325 can be regarded as the lead out of the fourth electrode layer 323 The fourth electrode body is connected to one end of the fourth rib 325 , and the fourth rib 325 is used for electrical connection with the fourth contact point 140 in the base chip 100 .

8) After completing step 7), perform an etching process, in the area where the first rib 314 and the first contact point 110 are opposite, and the area where the second rib 315 and the second contact point 120 are opposite, the fourth branch rib A first through hole 340 , a second through hole 350 , and a fourth through hole 360 are formed in the region opposite to the fourth contact point 140 , see FIG. 11 . The first through hole 340 passes through the ultrasonic piezoelectric layer 322 , the pressure piezoelectric layer 312 , the first rib 314 , and the insulating layer 200 , and leaks out from the corresponding first contact point 110 of the base chip 100 , and the second through hole 350 passes through the ultrasonic The piezoelectric layer 322 , the second rib 315 , the pressure piezoelectric layer 312 , and the insulating layer 200 leak out from the corresponding second contact point 120 of the base chip 100 . The fourth through holes 360 pass through the fourth rib 325 , the ultrasonic piezoelectric layer 322 , the second rib 315 , the pressure piezoelectric layer 312 , and the insulating layer 200 , and leak out the corresponding fourth contact point 140 of the base chip 100 . In this embodiment, through the control of the through hole fabrication process, the first through hole 340 preferably leaks at least part of the upper surface of the first rib 314 to enhance the contact area between the first rib 314 and the conductive medium. Likewise, both the second through holes 350 and the fourth through holes 360 leak out at least part of the upper surface of the corresponding support rib, so as to enhance the subsequent contact area with the conductive medium.

9) After completing step 8), a conductive medium is deposited inside and above the first through hole 340, the second through hole 350 and the fourth through hole 360, and the conductive medium fills the first through hole 340 and the second through hole 350 and the fourth through hole 360, the upper surface of the conductive medium in each through hole is higher than the upper surface of the piezoelectric layer outside the hole. In this embodiment, the conductive medium is aluminum, which is formed by physical vapor deposition, and the conductive medium is also Other conductive materials are possible. After the conductive medium is deposited, a patterning process is performed to remove part of the conductive medium outside the first through hole 340 , the second through hole 350 and the fourth through hole 360 , and the first conductive pillar 500 fills the first through hole 340 , the second conductive column 600 (equivalent to the second conductive column 600 and the third conductive column 700 in FIG. 1 ) is filled with the second through hole 350 , the fourth conductive column 800 is filled with the fourth through hole 360 , See Figure 12. The first conductive post 500 is in electrical contact with the first contact point 110 of the base chip 100 and the first rib 314 respectively, so as to electrically connect the first contact point 110 of the base chip 100 with the first electrode layer 311 and the second conductive post 600 The second contact point 120 and the second rib 315 of the base chip 100 are respectively in electrical contact, so as to be electrically connected to the second contact point 120 of the base chip 100 and the second electrode layer 313 , and the fourth conductive column 800 is respectively connected to the base chip 100 The fourth contact point 140 of the base chip 100 is in electrical contact with the fourth rib 325 , so as to electrically connect the fourth contact point 140 of the base chip 100 and the second electrode layer 313 . Using the first conductive pillar 500 and the second conductive pillar 600, the electrical connection between the circuit unit of the substrate chip 100 and the pressure piezoelectric layer 312 above is realized, that is, the connection between the signal processor substrate and the pressure transducer is realized. electrical connection between. Using the second conductive pillar 600 and the fourth conductive pillar 800, the electrical connection between the circuit unit of the substrate chip 100 and the ultrasonic piezoelectric layer 322 is realized, that is, the electrical connection between the signal processor substrate and the ultrasonic transducer is realized. Electrical connection.

10) After completing step 9), a protective layer 400 is deposited on the ultrasonic layer. Referring to FIG. 13, the protective layer 400 covers the ultrasonic piezoelectric layer 322, the fourth electrode layer 323, the first conductive column 500, and the second conductive column. 600 and the fourth conductive pillar 800 . The protective layer 400 can be deposited using deposition processes known in the art. On the one hand, the protective layer 400 can play a role of sealing, insulating and protecting the piezoelectric layer, and on the other hand, the protective layer 400 can also serve as a matching layer for the pixel structure of the ultrasonic transducer. Therefore, the first electrode layer 311 , the second electrode layer 313 , the fourth electrode layer 323 , the pressure piezoelectric layer 312 , the ultrasonic piezoelectric layer 322 , and the protective layer 400 cooperate to form the pressure and the pressure corresponding to the circuit unit of the base chip 100 . Ultrasonic piezoelectric bilayer 300 transducer pixel structure. The optimal combination of the thicknesses and plane dimensions of the above-mentioned layers can obtain an ideal resonant frequency and higher sensitivity. In this embodiment, the material of the protective layer 400 is silicon rubber, and may also be other insulating materials or combinations in the field.

It can be seen from the above technical solutions that in the present application, the pressure layer with pressure detection and the ultrasonic layer with ultrasonic imaging function are arranged in a transducer probe structure, and the pressure signal and the ultrasonic signal are detected synchronously and independently, so the pressure detection can be performed at the same time. Ultrasound imaging can also be performed, thereby expanding the functions of the product and broadening the application scenarios.

According to another aspect of the present application, there is also provided a medical device comprising the transducer probe of any of the structures described above.

Medical equipment application case 1:

Intravascular detection: The pressure transducer in the transducer probe is used for intravascular palpation, which can detect the convex position in the blood vessel and the unevenness of the rough surface; the ultrasonic transducer in the transducer probe is used for imaging of the inner wall of the blood vessel and blood vessels. Flow detection, the combination of the two can get the real appearance of the inner wall of the blood vessel.

Medical equipment application case 2:

Skin and subcutaneous tissue detection: The pressure transducer in the transducer probe can be attached to the skin surface to detect the pulse. Since ultrasonic waves can penetrate the skin surface and detect subcutaneous tissue, the ultrasonic transducer in the transducer probe can be used to detect tumors, nodules, and blood flow in the subcutaneous tissue.

The above descriptions are only preferred embodiments of the present application, and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the protection scope of this application.

Claims (16)

1. a transducer probe, is characterized in that, comprises: base chip; an insulating layer covering the upper surface of the base chip; A double piezoelectric layer, disposed on the upper surface of the insulating layer, includes a pressure layer, an ultrasonic layer, and an isolation device located between the pressure layer and the ultrasonic layer and capable of shielding signal interference between the ultrasonic layer and the pressure layer layer; the ultrasonic layer is located above the pressure layer; The conductive component includes a first conductive component for electrically connecting the base chip and the pressure layer and a second conductive component for electrically connecting the base chip and the ultrasonic layer. 2. The transducer probe according to claim 1, wherein the bi-piezoelectric layer comprises: A first electrode layer, disposed on the upper surface of the insulating layer and having an area smaller than that of the insulating layer, includes a first electrode body and a first rib; the first rib is electrically connected to the first electrode body and serve as the lead-out end of the first electrode body; a pressure piezoelectric layer, which is arranged on the insulating layer and covers the first electrode layer, and a plurality of piezoelectric transducer units arranged in an array are arranged on the pressure piezoelectric layer; an intermediate layer, arranged on the upper surface of the pressure piezoelectric layer and having an area smaller than that of the pressure piezoelectric layer; an ultrasonic piezoelectric layer, disposed on the intermediate layer and covering the intermediate layer, for generating ultrasonic signals; A fourth electrode layer, arranged on the upper surface of the ultrasonic piezoelectric layer and having an area smaller than that of the ultrasonic piezoelectric layer, includes a fourth electrode body and a fourth rib; the fourth rib and the fourth The electrode body is electrically connected and serves as the lead-out end of the fourth electrode body; The intermediate layer is configured to shield signal interference between the ultrasonic piezoelectric layer and the pressure piezoelectric layer, and to form the pressure layer with the pressure piezoelectric layer and the first electrode layer and to The pressure signal generated by the pressure piezoelectric layer is transmitted to the base chip; and the ultrasonic layer is formed with the ultrasonic piezoelectric layer and the fourth electrode layer and the ultrasonic signal generated by the ultrasonic piezoelectric layer is transmitted to the base chip. 3. The transducer probe of claim 2, wherein the intermediate layer comprises: The second electrode layer includes a second electrode body and a second rib; the second rib is electrically connected to the second electrode body and serves as a lead-out end of the second electrode body; the second electrode layer is located at the directly above the first electrode layer; The portion of the ultrasonic piezoelectric layer in contact with the second electrode layer is polarized, and the portion in contact with the pressure piezoelectric layer is not polarized. 4. The transducer probe of claim 2, wherein the intermediate layer comprises: A second electrode layer, disposed on the upper surface of the pressure piezoelectric layer and having an area smaller than that of the pressure piezoelectric layer, includes a second electrode body and a second rib; the second rib and the second The electrode body is electrically connected and serves as the lead-out end of the second electrode body; the isolation layer; A third electrode layer, located above the isolation layer, includes a third electrode body and a third rib, the third rib is electrically connected to the third electrode body and serves as a lead-out end of the third electrode body ; The ultrasonic piezoelectric layer is arranged on the isolation layer and covers the third electrode layer; The first electrode layer and the second electrode layer are used for transmitting the pressure signal generated by the piezoelectric transducer unit to the base chip, and the third electrode layer and the fourth electrode layer are used for The ultrasonic signal generated by the ultrasonic transducer unit is transmitted to the base chip. 5. The transducer probe according to claim 3, wherein a first contact point, a second contact point and a fourth contact point are configured on the base chip; The first contact point and the first rib are connected through a first conductive column; the second contact point and the second rib are connected through a second conductive column; the fourth contact point and the fourth rib are connected through a fourth Conductive column connection; The first conductive column, the second conductive column, and the fourth conductive column all pass through the piezoelectric bilayer and avoid the first electrode layer, the second electrode layer, and the fourth electrode layer; The first contact point, the first conductive column, the second contact point and the second conductive column constitute the first conductive component; the second contact point, the second conductive column, the fourth contact point and the fourth conductive column constitute the second conductive component. 6 . The transducer probe according to claim 5 , wherein the cross-sectional area of the first conductive column is smaller than that of the first rib; and the cross-sectional area of the second conductive column is smaller than that of the second conductive column. 7 . The cross-sectional area of the support rib; the cross-sectional area of the fourth conductive column is smaller than the cross-sectional area of the fourth support rib. 7. The transducer probe according to claim 3 or 4, wherein the first electrode layer, the fourth electrode layer, the second electrode layer in the intermediate layer or the second electrode layer in the intermediate layer and An excitation layer is etched on the third electrode layer. 8 . The transducer probe according to claim 7 , further comprising a protective layer disposed above the ultrasonic piezoelectric layer and covering the fourth electrode layer. 9 . 9 . The transducer probe of claim 3 , wherein the thickness of the ultrasonic piezoelectric layer is different from the thickness of the pressure piezoelectric layer. 10 . 10. A medical device, comprising the transducer probe of any one of claims 1 to 9. 11. A method for making a transducer probe, comprising: Forming a base chip based on a CMOS process; forming an insulating layer on the surface of the base chip; A pressure layer, an isolation layer and an ultrasonic layer are sequentially deposited on the surface of the insulating layer from bottom to top; the isolation layer is used to shield the signal interference between the ultrasonic layer and the pressure layer; The isolation layer and the ultrasonic layer constitute a bi-piezoelectric layer; A first conductive member for electrically connecting the base chip and the pressure layer is provided between the base chip and the pressure layer, and between the base chip and the ultrasonic layer for electrically connecting the The base chip and the second conductive component of the ultrasonic layer; the first conductive component and the second conductive component constitute the conductive component of the transducer probe. 12. The manufacturing method according to claim 11, wherein the manufacturing process of the piezoelectric bilayer comprises: Making the piezoelectric layer: depositing a layer of metal material on the surface of the insulating layer as a first electrode layer; depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer; depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer; depositing a layer of metal material on the layer as the second electrode layer; Making the isolation layer: depositing a layer of isolation layer on the second electrode layer, the thickness of the isolation layer is an odd multiple of a quarter ultrasonic wavelength; Making the ultrasonic layer: depositing a layer of metal material on the isolation layer as the third electrode layer; coating the ultrasonic piezoelectric layer on the third electrode layer; the ultrasonic piezoelectric layer and the third electrode The part in contact with the layer is polarized, and the part not in contact with the third electrode layer is not polarized; a layer of metal material is deposited on the ultrasonic piezoelectric layer as the fourth electrode layer. 13. The manufacturing method according to claim 11, wherein the manufacturing process of the piezoelectric bilayer comprises: A layer of metal material is deposited on the surface of the insulating layer as a first electrode layer; depositing a piezoelectric piezoelectric layer on the insulating layer and the first electrode layer; depositing a layer of metal material on the pressure piezoelectric layer as a second electrode layer, and the second electrode layer is located directly above the first electrode layer; An ultrasonic piezoelectric layer is coated on the second electrode layer; the part of the ultrasonic piezoelectric layer in contact with the second electrode layer is polarized, and the part not in contact with the second electrode layer is not polarized ; A layer of metal material is deposited on the ultrasonic piezoelectric layer as a fourth electrode layer. 14. The manufacturing method according to claim 12, wherein the conductive component electrically connects the base chip and the pressure layer, and the method for electrically connecting the base chip and the ultrasonic layer comprises: providing first to fourth contact points on the base chip; The first electrode layer includes a first electrode body and a first rib that are separated from a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated from a predetermined distance and are electrically connected; the The third electrode layer includes a third electrode body and a third rib that are separated by a predetermined distance and are electrically connected; the fourth electrode layer includes a fourth electrode body and a fourth rib that are separated by a predetermined distance and are electrically connected; the first The supporting rib, the second supporting rib, the third supporting rib and the fourth supporting rib are dislocated; In the area where the first branch rib is opposite to the first contact point, the second branch rib is opposite to the second contact point, the third branch rib is opposite to the third contact point an area, and an area where the fourth rib and the fourth contact point are opposite to form a first through hole, a second through hole, a third through hole and a fourth through hole; The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib, and the insulating layer and allows the first contact point to leak out; the second through hole passes through the isolation layer, the second through hole The support rib, the pressure piezoelectric layer, the insulating layer make the second contact point leak out; the third through hole passes through the ultrasonic piezoelectric layer, the third support rib, the pressure layer, the insulating layer and makes the third contact point point leakage, the fourth through hole passes through the fourth support rib, the ultrasonic piezoelectric layer, the fourth support rib, the pressure piezoelectric layer, and the insulating layer, and causes the fourth contact point to leak out; A conductive medium is deposited in and over the first via, the second via, the third via, and the fourth via to form a first conductive post, a second conductive post, and a third conductive a column and a fourth conductive column; The first conductive column and the second conductive column are used to electrically connect the base chip and the pressure piezoelectric layer; the third conductive column and the fourth conductive column are used to electrically connect the A base chip and the ultrasonic piezoelectric layer. 15. The manufacturing method according to claim 13, wherein the conductive component electrically connects the base chip and the pressure layer, and the method for electrically connecting the base chip and the ultrasonic layer comprises: disposing a first contact point, a second contact point and a fourth contact point on the base chip; The first electrode layer includes a first electrode body and a first rib that are separated from a predetermined distance and electrically connected; the second electrode layer includes a second electrode body and a second rib that are separated from a predetermined distance and are electrically connected; the the fourth electrode layer includes a fourth electrode body and a fourth rib electrically connected with a predetermined distance; the first rib, the second rib and the fourth rib are dislocated; In the area where the first rib is opposite to the first contact point, the area where the second branch is opposite to the second contact point, and the fourth rib is opposite to the fourth contact point area, forming a first through hole, a second through hole and a fourth through hole; The first through hole passes through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib, and the insulating layer and causes the first contact point to leak out; the second through hole passes through the ultrasonic piezoelectric layer, The second support rib, the pressure piezoelectric layer, the insulating layer and the second contact point leak out; the fourth through hole passes through the fourth support rib, the ultrasonic piezoelectric layer, the second support rib, the pressure piezoelectric layer, insulating layer and leaking the fourth contact point; A conductive medium is deposited in and over the first, second, and fourth vias to form first, second, and fourth conductive pillars. 16. The manufacturing method according to claim 14 or 15, characterized in that, further comprising: A protective layer is deposited on the ultrasonic layer; the protective layer covers the ultrasonic piezoelectric layer, the fourth electrode layer and the top of each conductive column.

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