CN114375349A - 原子层沉积设备 - Google Patents
原子层沉积设备 Download PDFInfo
- Publication number
- CN114375349A CN114375349A CN202080060543.6A CN202080060543A CN114375349A CN 114375349 A CN114375349 A CN 114375349A CN 202080060543 A CN202080060543 A CN 202080060543A CN 114375349 A CN114375349 A CN 114375349A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20195590 | 2019-06-28 | ||
FI20195590A FI129627B (en) | 2019-06-28 | 2019-06-28 | Nuclear layer cultivation equipment |
PCT/FI2020/050465 WO2020260769A1 (en) | 2019-06-28 | 2020-06-26 | Atomic layer deposition apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114375349A true CN114375349A (zh) | 2022-04-19 |
CN114375349B CN114375349B (zh) | 2023-12-19 |
Family
ID=74060477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080060543.6A Active CN114375349B (zh) | 2019-06-28 | 2020-06-26 | 原子层沉积设备 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220205098A1 (zh) |
CN (1) | CN114375349B (zh) |
FI (1) | FI129627B (zh) |
WO (1) | WO2020260769A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI130416B (en) * | 2019-06-28 | 2023-08-21 | Beneq Oy | Precursor source arrangement and atomic layer growth apparatus |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1174527A1 (en) * | 2000-07-22 | 2002-01-23 | IPS Ltd | Atomic layer deposition (ALD) film deposition equipment and cleaning method |
US20020100418A1 (en) * | 2000-05-12 | 2002-08-01 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
US20020104481A1 (en) * | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
CN1468975A (zh) * | 2002-07-15 | 2004-01-21 | ���ǵ�����ʽ���� | 原子层沉积反应设备 |
US20040052972A1 (en) * | 2002-07-03 | 2004-03-18 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
CN102234790A (zh) * | 2010-04-19 | 2011-11-09 | Asm美国股份有限公司 | 前体传输系统 |
US20120266984A1 (en) * | 2011-04-25 | 2012-10-25 | Applied Materials, Inc. | Chemical delivery system |
US20120266819A1 (en) * | 2011-04-25 | 2012-10-25 | Applied Materials, Inc. | Semiconductor substrate processing system |
CN102803558A (zh) * | 2009-06-15 | 2012-11-28 | Beneq有限公司 | 设备 |
CN103114277A (zh) * | 2013-03-07 | 2013-05-22 | 中国科学院半导体研究所 | 一种原子层沉积设备 |
EP2765218A1 (en) * | 2013-02-07 | 2014-08-13 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
CN104204290A (zh) * | 2012-03-23 | 2014-12-10 | 皮考逊公司 | 原子层沉积方法和装置 |
US20150011076A1 (en) * | 2013-07-03 | 2015-01-08 | Applied Materials, Inc. | Reactor gas panel common exhaust |
US20150147482A1 (en) * | 2013-11-25 | 2015-05-28 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ald films |
US20160265107A1 (en) * | 2015-03-12 | 2016-09-15 | Tokyo Electron Limited | Substrate holder and substrate processing apparatus |
WO2018050953A1 (en) * | 2016-09-16 | 2018-03-22 | Picosun Oy | Apparatus and methods for atomic layer deposition |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000074122A1 (fr) * | 1999-05-28 | 2000-12-07 | Tokyo Electron Limited | Dispositif de traitement a l'ozone pour systeme de fabrication de semi-conducteurs |
US9157151B2 (en) * | 2006-06-05 | 2015-10-13 | Applied Materials, Inc. | Elimination of first wafer effect for PECVD films |
JP5528374B2 (ja) * | 2011-03-03 | 2014-06-25 | 東京エレクトロン株式会社 | ガス減圧供給装置、これを備えるシリンダキャビネット、バルブボックス、及び基板処理装置 |
JP2012189169A (ja) * | 2011-03-11 | 2012-10-04 | Toshiba Corp | シリンダーキャビネット |
-
2019
- 2019-06-28 FI FI20195590A patent/FI129627B/en active IP Right Grant
-
2020
- 2020-06-26 CN CN202080060543.6A patent/CN114375349B/zh active Active
- 2020-06-26 WO PCT/FI2020/050465 patent/WO2020260769A1/en active Application Filing
- 2020-06-26 US US17/622,340 patent/US20220205098A1/en not_active Abandoned
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020100418A1 (en) * | 2000-05-12 | 2002-08-01 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
EP1174527A1 (en) * | 2000-07-22 | 2002-01-23 | IPS Ltd | Atomic layer deposition (ALD) film deposition equipment and cleaning method |
US20020104481A1 (en) * | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
US20040052972A1 (en) * | 2002-07-03 | 2004-03-18 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
CN1468975A (zh) * | 2002-07-15 | 2004-01-21 | ���ǵ�����ʽ���� | 原子层沉积反应设备 |
US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
CN102803558A (zh) * | 2009-06-15 | 2012-11-28 | Beneq有限公司 | 设备 |
CN102234790A (zh) * | 2010-04-19 | 2011-11-09 | Asm美国股份有限公司 | 前体传输系统 |
US20120266819A1 (en) * | 2011-04-25 | 2012-10-25 | Applied Materials, Inc. | Semiconductor substrate processing system |
US20120266984A1 (en) * | 2011-04-25 | 2012-10-25 | Applied Materials, Inc. | Chemical delivery system |
CN104204290A (zh) * | 2012-03-23 | 2014-12-10 | 皮考逊公司 | 原子层沉积方法和装置 |
EP2765218A1 (en) * | 2013-02-07 | 2014-08-13 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
CN103114277A (zh) * | 2013-03-07 | 2013-05-22 | 中国科学院半导体研究所 | 一种原子层沉积设备 |
US20150011076A1 (en) * | 2013-07-03 | 2015-01-08 | Applied Materials, Inc. | Reactor gas panel common exhaust |
US20150147482A1 (en) * | 2013-11-25 | 2015-05-28 | Lam Research Corporation | Chamber undercoat preparation method for low temperature ald films |
US20160265107A1 (en) * | 2015-03-12 | 2016-09-15 | Tokyo Electron Limited | Substrate holder and substrate processing apparatus |
WO2018050953A1 (en) * | 2016-09-16 | 2018-03-22 | Picosun Oy | Apparatus and methods for atomic layer deposition |
CN109689930A (zh) * | 2016-09-16 | 2019-04-26 | 皮考逊公司 | 用于原子层沉积的设备和方法 |
Also Published As
Publication number | Publication date |
---|---|
US20220205098A1 (en) | 2022-06-30 |
WO2020260769A1 (en) | 2020-12-30 |
CN114375349B (zh) | 2023-12-19 |
FI129627B (en) | 2022-05-31 |
FI20195590A1 (en) | 2020-12-29 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: Espoo, Finland Applicant after: BENEQ Group Ltd. Address before: Espoo, Finland Applicant before: BENEQ OY |
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CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220916 Address after: Espoo, Finland Applicant after: BENEQ OY Address before: Espoo, Finland Applicant before: BENEQ Group Ltd. |
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TA01 | Transfer of patent application right |
Effective date of registration: 20230427 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Applicant after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Applicant before: BENEQ OY |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: Building 3, No.11 Mumashan Road, Qingdao Area, China (Shandong) Pilot Free Trade Zone, Qingdao City, Shandong Province, China 266000 Patentee after: Qingdao Sirui Intelligent Technology Co.,Ltd. Country or region after: China Address before: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao Pilot Free Trade Zone, Shandong Province (A) Patentee before: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Country or region before: China |
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CP03 | Change of name, title or address |