CN114351116B - Atomic layer deposition device and atomic layer deposition method - Google Patents
Atomic layer deposition device and atomic layer deposition method Download PDFInfo
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- CN114351116B CN114351116B CN202011089730.5A CN202011089730A CN114351116B CN 114351116 B CN114351116 B CN 114351116B CN 202011089730 A CN202011089730 A CN 202011089730A CN 114351116 B CN114351116 B CN 114351116B
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Abstract
The application belongs to the technical field of semiconductor manufacturing, and particularly relates to an atomic layer deposition device and an atomic layer deposition method. The atomic layer deposition device comprises a reaction chamber, a wafer carrier and a plurality of nozzles, wherein the wafer carrier is arranged in the reaction chamber and is used for carrying a plurality of wafers in the same plane, and the nozzles are arranged on the side wall or the top wall of the reaction chamber above the wafer carrier and are used for introducing a first precursor, a second precursor and a purifying gas into the reaction chamber. According to the atomic layer deposition device, atomic layers can be formed on the surfaces of a plurality of wafers at the same time, so that the wafer production efficiency is improved, the uniformity of the deposition thickness and range of the atomic layers is ensured, and the wafer quality is improved.
Description
Technical Field
The application belongs to the technical field of semiconductor manufacturing, and particularly relates to an atomic layer deposition device and an atomic layer deposition method.
Background
Semiconductor processing in integrated circuit fabrication generally involves depositing a film layer on a semiconductor substrate. One method is Atomic Layer Deposition (ALD) technology. Atomic layer deposition generally involves depositing a continuous monolayer of film onto a substrate in a sub-atmospheric reaction chamber. With typical ALD, film growth on a substrate is achieved by alternately pulsing different deposition precursors (pre-cursors) to the substrate surface.
The ALD method includes flowing a vaporized precursor into a reaction chamber effective to form a first monolayer film on a substrate disposed therein. Thereafter, the first vaporized precursor is stopped from being introduced and an inert purge gas is introduced to effectively remove the excess first vaporized precursor and reaction byproducts that do not participate in the reaction within the reaction chamber. Subsequently, a second vaporized precursor, different from the first vaporized precursor, is introduced into the reaction chamber to form a second monolayer film on the first monolayer film. And stopping introducing the second vaporized precursor and introducing inert purge gas to effectively remove the excessive second vaporized precursor and reaction byproducts which do not participate in the reaction chamber. The above process is repeated until a film layer having a desired thickness is formed on the substrate.
In the prior art, furnace equipment is typically used in atomic layer deposition of batches of wafers. The wafers are placed on a carrier, and a gaseous reactant is sprayed on the side surfaces of the wafers while the carrier is rotated, so that the deposition process of the batch wafers is completed. In this way, uneven thickness and poor step coverage of the deposited wafer surface are easily caused, thereby affecting wafer quality.
Disclosure of Invention
The application aims to at least solve the problems of uneven surface deposition thickness and poor step coverage performance during wafer mass production. This object is achieved by:
a first aspect of the present application proposes an atomic layer deposition apparatus comprising:
A reaction chamber;
The wafer carrier is arranged in the reaction chamber and is used for carrying a plurality of wafers in the same plane;
The plurality of nozzles are arranged on the side wall or the top wall of the reaction chamber above the wafer carrier and are used for introducing the first precursor, the second precursor and the purifying gas into the reaction chamber.
Another aspect of the present application also provides an atomic layer deposition method including the steps of:
Providing a reaction chamber, spreading a plurality of wafers on a wafer carrier in the reaction chamber, and keeping the wafer carrier fixed;
Starting to introduce a first precursor, wherein the first precursor is introduced into the reaction chamber through at least one nozzle in a plurality of nozzles, and a first monolayer film is formed on the surface of the wafer;
stopping introducing the first precursor, starting introducing purge gas, introducing the purge gas into the reaction chamber through at least one nozzle of the plurality of nozzles, and removing the first precursor in the reaction chamber;
Stopping introducing the purge gas, starting introducing a second precursor, introducing the second precursor into the reaction chamber through at least one nozzle of a plurality of nozzles, and forming a second monolayer film on the surface of the wafer;
Stopping introducing the second precursor, starting introducing the purge gas, introducing the purge gas into the reaction chamber through at least one nozzle of the plurality of nozzles, and removing the second precursor in the reaction chamber;
repeating the steps of introducing the first precursor, the purifying gas and the second precursor until the atomic layer growth reaches the target thickness.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures. Wherein:
FIG. 1 is a schematic view of a part of an atomic layer deposition apparatus according to an embodiment of the present application;
FIG. 2 is a schematic view of a cross-sectional A-A structure of the atomic layer deposition apparatus of FIG. 1;
Fig. 3 is a schematic view of a distribution structure of wafers on the wafer carrier of fig. 1.
The reference numerals in the drawings are as follows:
100 an atomic layer deposition device;
10, a reaction chamber;
A wafer carrier;
30, 31, first, second and third nozzles, 32, 33;
200, wafer.
Detailed Description
Exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless an order of performance is explicitly stated. It should also be appreciated that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "below," "upper," "above," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions) and the spatial relative relationship descriptors used herein interpreted accordingly.
As shown in fig. 1 and 2, the atomic layer deposition apparatus 100 of the present embodiment includes a reaction chamber 10, a wafer carrier 20, and a plurality of nozzles 30, wherein the wafer carrier 20 is disposed in the reaction chamber 10 and is used for carrying a plurality of wafers 200 on the same plane, and the plurality of nozzles 30 are disposed on a sidewall or a top wall of the reaction chamber above the wafer carrier 20 and are used for introducing a first precursor, a second precursor, and a purge gas into the reaction chamber 10.
According to the atomic layer deposition apparatus 100 of the present application, a plurality of wafers 200 are simultaneously disposed on the wafer carrier 20, and the first precursor and the second precursor are sequentially introduced into the reaction chamber 10 through the nozzle 30, so that atomic layers can be simultaneously formed on the surfaces of the plurality of wafers 200, the wafer production efficiency is improved, and meanwhile, no shielding object is provided on the surfaces of the wafers 200, and sufficient contact between the surfaces of the wafers 200 and the first precursor and the second precursor can be ensured, thereby ensuring uniformity of deposition thickness and range of atomic layers, and improving quality of the wafers 200.
Depending on the deposition precursor and the substrate material, atomic layer deposition has two different self-limiting mechanisms, namely chemisorption self-limiting (CS) and sequential reaction self-limiting (RS) processes.
During chemisorption self-limiting deposition, the first reactive precursor is delivered to the substrate surface and is held on the surface by chemisorption (saturated adsorption). When the second precursor is introduced into the reaction chamber, it reacts with the first precursor adsorbed on the surface of the substrate. A displacement reaction between the two precursors occurs and produces corresponding byproducts until the first precursor on the surface is completely consumed, and the reaction automatically stops and forms the desired atomic layer. This is a self-limiting process and the reaction is repeated to form a thin film.
Unlike chemisorption self-limiting processes, sequential reaction self-limiting atomic layer deposition processes are driven by chemical reaction of an active precursor species with the surface of an active matrix material, such that the resulting deposited film is formed from chemical reaction between the precursor and the matrix material. The process is first to activate the surface of the base material with activator and then to react the first precursor to form adsorption intermediate. When the second precursor is injected into the reactor, it reacts with the adsorbed intermediate and forms a deposited atomic layer.
The plurality of nozzles 30 of the present embodiment includes a plurality of first nozzles 31, a plurality of second nozzles 32, and a plurality of third nozzles 33. The first nozzles 31 are used for introducing the first precursor into the reaction chamber 10, the second nozzles 32 are used for introducing the second precursor into the reaction chamber 10, and the third nozzles 33 are used for introducing the purge gas into the reaction chamber 10.
A first precursor is introduced into the reaction chamber 10 through the first nozzle 31, and the first precursor is adsorbed on the surface of the wafer 200 by its own characteristics. Then, purge gas is introduced into the reaction chamber 10 through the third nozzle 33, so that the first precursor not adsorbed on the surface of the wafer 200 is completely removed from the reaction chamber 10. A second precursor is then introduced into the reaction chamber 10 through the second nozzle 32, and the second precursor reacts with the first precursor attached to the surface of the wafer 200, thereby forming an atomic layer. Repeating the steps until the atomic layer with the consistent thickness is obtained.
Wherein, in order to ensure the formation process of the atomic layer, the purge gas can effectively purge the first precursor and the second precursor, and the second nozzle 32, the third nozzle 33 and the first nozzle 31 are disposed along the sidewall of the reaction chamber 10 at intervals from top to bottom.
As shown in fig. 3, the reaction chamber 10 of the present embodiment has a rectangular structure, and the wafer carrier 20 inside the reaction chamber has a rectangular structure so as to set the distance between the edge of the wafer carrier 20 and the inner wall of the reaction chamber 10. The number of wafers 200 on the wafer carrier 20 is set to 25, which just satisfies the number of wafers 200 in the same cassette, thereby ensuring uniformity of the thickness covered by the wafers 200 in the same cassette. The 25 wafers are arranged in 5 columns arranged at equal intervals, and 5 wafers arranged at equal intervals are included in any one column.
The opposite side walls of the reaction chamber 10 in the length direction of the present embodiment are respectively provided with a plurality of first nozzles 31 that are arranged oppositely, and the spraying distance of the first nozzles 31 is at least the shortest linear distance between the inner wall of the reaction chamber 10 and the center of the wafer carrier 20, so that the first precursor sprayed by the first nozzles 31 can fully and effectively cover the plurality of wafers 200 on the wafer carrier 20, and further, the atomic layer formed later has uniform thickness and coverage.
The opposite side walls of the reaction chamber 10 in the length direction of the present embodiment are further provided with a plurality of second nozzles 32 and a plurality of third nozzles 33, which are disposed opposite to each other, and the spraying distances of the second nozzles 32 and the third nozzles 33 are at least the shortest linear distance between the inner wall of the reaction chamber 10 and the center of the wafer carrier 20, so that the second precursor can fully and effectively cover the plurality of wafers 200 on the wafer carrier 20, and the purge gas can effectively purge the first precursor, so that the atomic layer formed in the later stage has uniform thickness and coverage.
In other embodiments of the present application, the first nozzle 31, the second nozzle 32, and the third nozzle 33 may be disposed on each of the four inner sidewalls of the reaction chamber 10, thereby further ensuring that the atomic layer is formed to have a uniform thickness and coverage.
In other embodiments of the present application, the plurality of nozzles 30 further include a plurality of fourth nozzles (not shown) for introducing an intermediate gas into the reaction chamber 10 in accordance with the arrangement form of the first nozzles 31, and the fourth nozzles are disposed below the first nozzles 31 along the sidewall of the reaction chamber 10.
When the first precursor is insufficient to cover the substrate by its own characteristics, an intermediate gas is introduced into the reaction chamber 10 through the fourth nozzle. Firstly, introducing intermediate gas to activate the surface of the wafer 200, then introducing a first precursor to enable the first precursor to react with the activated surface of the wafer 200 to form an adsorption intermediate, and then introducing a second precursor to enable the second precursor to react with the adsorption intermediate to form an atomic layer.
In other embodiments of the present application, the intermediate gas may be injected into the reaction chamber 10 through the second nozzle 32 first, and then the first precursor and the second precursor may be sequentially injected through the first nozzle 31, so that atomic layer deposition can be similarly achieved.
The atomic layer deposition apparatus 100 according to the embodiment of the present application further includes a heating unit, the heating portion of which is disposed inside or outside the wafer carrier 20, for controlling the temperature in the reaction chamber 10 so as to satisfy the reaction conditions of the first precursor and the second precursor. Wherein the heating unit may be a controllable heating coil.
The application also provides an atomic layer deposition method, which comprises the following steps:
A reaction chamber 10 is provided, a plurality of wafers 200 are tiled on a wafer carrier 20 within the reaction chamber 10, and the wafer carrier 20 is held stationary. The number of wafers 200 on the wafer carrier 20 is set to 25, the 25 wafers 200 are set to 5 columns arranged at equal intervals, and each column includes 5 wafers 200 arranged at equal intervals.
The first precursor is introduced into the reaction chamber 10 through the plurality of first nozzles 31, and a first monolayer film is formed on the surface of the wafer 200.
The first precursor is stopped from being fed, and the purge gas is started to be fed. Purge gas is introduced into the reaction chamber 10 through the plurality of third nozzles 33 and the first precursor in the reaction chamber 10 is purged.
The purge gas is stopped and the second precursor is started. The second precursor is introduced into the reaction chamber 10 through the plurality of second nozzles 32, and forms a second monolayer film on the surface of the wafer 200.
The supply of the second precursor is stopped, the supply of the purge gas is started, the purge gas is supplied into the reaction chamber 10 through the plurality of third nozzles 33, and the second precursor in the reaction chamber 10 is purged.
Repeating the steps of introducing the first precursor, the purifying gas and the second precursor until the atomic layer growth reaches the target thickness.
Further, when the first precursor is insufficient to cover the wafer 200 by its own characteristics, an intermediate gas is introduced into the reaction chamber 10 to activate the surface of the wafer 200. Then the ventilation steps in the above embodiments are sequentially performed to achieve atomic layer deposition.
The present application is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (7)
1. An atomic layer deposition apparatus, comprising:
A reaction chamber;
The wafer carrier is arranged in the reaction chamber and is used for carrying a plurality of wafers in the same plane;
A plurality of nozzles arranged on the side wall or the top wall of the reaction chamber above the wafer carrier and used for introducing a first precursor, a second precursor and a purifying gas into the reaction chamber,
The plurality of nozzles includes:
a plurality of first nozzles for introducing the first precursor into the reaction chamber;
A plurality of second nozzles for introducing the second precursor into the reaction chamber;
a plurality of third nozzles for introducing the purge gas into the reaction chamber;
The second nozzle, the third nozzle and the first nozzle are arranged at intervals from top to bottom along the side wall of the reaction chamber;
The first nozzles are at least arranged on a pair of opposite side walls of the reaction chamber;
the second nozzles are at least arranged on a pair of opposite side walls of the reaction chamber;
The plurality of third nozzles are arranged at least on a pair of side walls which are oppositely arranged in the reaction chamber.
2. The atomic layer deposition apparatus according to claim 1, wherein the plurality of nozzles further comprises a plurality of fourth nozzles for introducing an intermediate gas into the reaction chamber, the fourth nozzles being disposed below the first nozzles along a sidewall of the reaction chamber.
3. The atomic layer deposition apparatus according to claim 1, further comprising a heating unit, the heating unit being partially provided in an interior or an exterior wall of the carrier.
4. The atomic layer deposition apparatus according to claim 1, wherein the number of wafer carriers for carrying the wafers is at least 25.
5. An atomic layer deposition method using the atomic layer deposition apparatus according to claim 1, comprising the steps of:
Providing a reaction chamber, spreading a plurality of wafers on a wafer carrier in the reaction chamber, and keeping the wafer carrier fixed;
Starting to introduce a first precursor, wherein the first precursor is introduced into the reaction chamber through at least one nozzle in a plurality of nozzles, and a first monolayer film is formed on the surface of the wafer;
stopping introducing the first precursor, starting introducing purge gas, introducing the purge gas into the reaction chamber through at least one nozzle of the plurality of nozzles, and removing the first precursor in the reaction chamber;
Stopping introducing the purge gas, starting introducing a second precursor, introducing the second precursor into the reaction chamber through at least one nozzle of a plurality of nozzles, and forming a second monolayer film on the surface of the wafer;
Stopping introducing the second precursor, starting introducing the purge gas, introducing the purge gas into the reaction chamber through at least one nozzle of the plurality of nozzles, and removing the second precursor in the reaction chamber;
repeating the steps of introducing the first precursor, the purifying gas and the second precursor until the atomic layer growth reaches the target thickness.
6. The atomic layer deposition method according to claim 5, wherein before starting the passage of the first precursor, further comprising the steps of:
And introducing an intermediate gas into the reaction chamber to activate the surface of the wafer.
7. The atomic layer deposition method according to claim 5, wherein the plurality of wafers are tiled on the wafer carrier in five columns arranged at equal intervals, and the number of the wafers in any one column is set to five, and the five wafers in any one column are arranged at equal intervals.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011089730.5A CN114351116B (en) | 2020-10-13 | 2020-10-13 | Atomic layer deposition device and atomic layer deposition method |
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| CN202011089730.5A CN114351116B (en) | 2020-10-13 | 2020-10-13 | Atomic layer deposition device and atomic layer deposition method |
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| CN114351116A CN114351116A (en) | 2022-04-15 |
| CN114351116B true CN114351116B (en) | 2024-12-31 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100319494B1 (en) * | 1999-07-15 | 2002-01-09 | 김용일 | Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process |
| KR100957456B1 (en) * | 2003-06-02 | 2010-05-14 | 주성엔지니어링(주) | Thin film deposition apparatus using atomic layer deposition method |
| US20050178336A1 (en) * | 2003-07-15 | 2005-08-18 | Heng Liu | Chemical vapor deposition reactor having multiple inlets |
| JP2007042890A (en) * | 2005-08-03 | 2007-02-15 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
| JP5444599B2 (en) * | 2007-09-28 | 2014-03-19 | 東京エレクトロン株式会社 | Gas supply apparatus and film forming apparatus |
| KR101485580B1 (en) * | 2008-07-01 | 2015-01-22 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
| JP5423205B2 (en) * | 2008-08-29 | 2014-02-19 | 東京エレクトロン株式会社 | Deposition equipment |
| KR200458194Y1 (en) * | 2009-12-24 | 2012-01-30 | 주식회사 케이씨텍 | Wafer-fixed susceptor and atomic layer deposition apparatus having the same |
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