CN114335022A - Display panel and manufacturing method thereof - Google Patents

Abstract

The application discloses display panel and manufacturing method thereof, and the display panel comprises: the display device comprises a first substrate, a driving thin film transistor and a switching thin film transistor; the driving thin film transistor is arranged on the first substrate and comprises a first active layer; the switch thin film transistor is arranged on the first substrate and comprises a second active layer; the first active layer is arranged on the first substrate, and the second active layer is arranged on one side, far away from the first substrate, of the first active layer. The application provides a display panel can solve because first base plate produces the polarization phenomenon and makes switch thin film transistor's reliability reduce, and then influences display panel's display effect's problem.

Description

Display panel and method of making the same

technical field

The present application relates to the field of display technology, and in particular, to a display panel and a manufacturing method thereof.

Background technique

With the continuous development of display technology, flexible display technology has become one of the important trends, which can meet the various requirements of users for display devices in terms of light weight, portability, low energy consumption, excellent image quality, and flexibility. . Among the various implementations of flexible display, organic light emitting diode display devices have self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, and wide operating temperature range, which can achieve flexible It has many advantages such as display and large-area full-color display, and is recognized by the industry as the display device with the most development potential.

In the prior art, the flexible substrate of the flexible display panel is prone to polarization, and the electric field generated by the polarized charges on the flexible substrate will reduce the reliability of the thin film transistor, which will lead to image retention in the flexible display panel and affect the flexible display. The display effect of the panel. In the current circuit design of the flexible display panel, the thin film transistor includes a driving thin film transistor and a switching thin film transistor, wherein the switching thin film transistor is affected by the electric field generated by the polarized charges on the flexible substrate, and the reliability is reduced, which is more likely to cause image retention in the flexible display panel. Phenomenon. Therefore, how to reduce the influence of the electric field generated by the polarized charges on the flexible substrate on the switching thin film transistor has become an urgent problem to be solved.

SUMMARY OF THE INVENTION

Embodiments of the present application provide a display panel and a manufacturing method thereof, so as to solve the problem that the reliability of the switching thin film transistor is reduced due to the polarization phenomenon of the first substrate, thereby affecting the display effect of the display panel.

On the one hand, an embodiment of the present application provides a display panel, including: a first substrate, a driving thin film transistor and a switching thin film transistor; the driving thin film transistor is disposed on the first substrate, and the driving thin film transistor includes a first an active layer; the switch thin film transistor is disposed on the first substrate, and the switch thin film transistor includes a second active layer; wherein the first active layer is disposed on the first substrate, and the first active layer is disposed on the first substrate. Two active layers are disposed on a side of the first active layer away from the first substrate.

Optionally, in some embodiments of the present application, the driving thin film transistor further includes a first gate, the switching thin film transistor further includes a second gate, the first gate and the second gate Same layer settings.

Optionally, in some embodiments of the present application, the second active layer is provided on a side of the second gate away from the first substrate.

Optionally, in some embodiments of the present application, the second active layer is disposed between the second gate electrode and the first substrate.

Optionally, in some embodiments of the present application, the switching thin film transistor is a top-gate transistor or a bottom-gate transistor, and/or the driving thin-film transistor is a top-gate transistor or a bottom-gate transistor.

Optionally, in some embodiments of the present application, the display panel further includes a first auxiliary electrode disposed corresponding to the second active layer, and the first auxiliary electrode is disposed between the first substrate and the second active layer. between the second gates.

Optionally, in some embodiments of the present application, the display panel further includes a second auxiliary electrode disposed corresponding to the first active layer, and the second auxiliary electrode is disposed between the first substrate and the second auxiliary electrode. between the first active layers.

Optionally, in some embodiments of the present application, the first auxiliary electrode, the second auxiliary electrode and the second gate are electrically connected.

Optionally, in some embodiments of the present application, the orthographic projection of the first auxiliary electrode on the first substrate covers the orthographic projection of the second active layer on the first substrate; the The orthographic projection of the second auxiliary electrode on the first substrate covers the orthographic projection of the first active layer on the first substrate.

On the other hand, the present application also provides a method for fabricating a display panel, comprising the following steps: forming a first active layer for driving thin film transistors on a first substrate; and placing the first active layer away from the first substrate The second active layer of the switching thin film transistor is formed on one side.

Embodiments of the present application provide a display panel and a manufacturing method thereof. The display panel includes: a first substrate, a driving thin film transistor, and a switching thin film transistor; the driving thin film transistor is disposed on the first substrate, and the driving thin film transistor It includes a first active layer; the switching thin film transistor is arranged on the first substrate, and the switching thin film transistor includes a second active layer; wherein, the first active layer is arranged on the first substrate , the second active layer is disposed on the side of the first active layer away from the first substrate. In the display panel provided by the present application, by arranging the second active layer of the switching thin film transistor on the side of the second gate away from the first substrate, that is, increasing the distance between the second active layer and the first substrate, The problem that the reliability of the switching thin film transistor is reduced due to the polarization phenomenon of the first substrate, thereby affecting the display effect of the display panel, is solved.

Description of drawings

In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained from these drawings without creative effort.

1a is a schematic diagram of a first structure of a display panel provided by an embodiment of the present application;

FIG. 1b is a schematic diagram of a circuit structure of a display panel provided by an embodiment of the present application;

2a is a schematic diagram of a second structure of a display panel provided by an embodiment of the present application;

FIG. 2b is a schematic diagram of a third structure of a display panel provided by an embodiment of the present application;

3 is a schematic diagram of a fourth structure of a display panel provided by an embodiment of the present application;

FIG. 4 is a flow chart of the fabrication of the display panel provided by the embodiment of the present application.

001/002/003, display panel, 10, first substrate, 20, first buffer layer, 30, second substrate, 40, second buffer layer, 50, first dielectric layer, 60, first gate insulating layer , 70, drive thin film transistor, 71, first gate, 72, first active layer, 73, first electrode, 731, first drain, 732, first source, 74, third gate, 80 , switching thin film transistor, 81, second gate, 82, second active layer, 83, second electrode, 831, second drain, 832, second source, 90, second gate insulating layer, 100 , a third gate insulating layer, 110, a second dielectric layer, 120, a first auxiliary electrode, 121, a first via hole, 130, a second auxiliary electrode, 131, and a connecting line.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

Embodiments of the present application provide a display panel and a manufacturing method thereof, so as to solve the problem that the reliability of the switching thin film transistor is reduced due to the polarization phenomenon of the first substrate, thereby affecting the display effect of the display panel. Each of them will be described in detail below. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of this application, the term "including" means "including but not limited to". The terms "first," "second," "third," etc. are used merely as labels to distinguish between different objects, rather than to describe a particular order.

The organic light-emitting device based on the existing flexible display panel includes a drive circuit for controlling the operation of the flexible display panel. When the flexible display panel operates, the electric charge in the drive circuit moves to form a current, and the electric field can also generate an electric field, which can Acting on the flexible substrate of the flexible display panel, the flexible substrate is polarized and polarized charges are generated. The side of the flexible substrate close to the organic light emitting device and the side far from the organic light emitting device are respectively polarized with different electrical charges. When more polarized charges are polarized on the flexible substrate, the electric field generated by the polarized charges on the flexible substrate will affect the charge distribution in the driving circuit, thereby causing image sticking in the flexible display panel. The display panel proposed in the present application can solve the problem that the reliability of the organic light-emitting device is reduced due to the polarization phenomenon of the flexible substrate of the existing flexible display panel, thereby affecting the display effect of the display panel.

Referring to FIG. 1a, FIG. 1a is a first structural schematic diagram of a display panel provided by an embodiment of the present application;

1b is a schematic diagram of a circuit structure of a display panel provided by an embodiment of the present application; as shown in FIG. 1a, an embodiment of the present application provides a display panel 001, including: a first substrate 10, a driving thin film transistor 70 and a switching thin film transistor 80; The driving thin film transistor 70 is disposed on the first substrate 10, and the driving thin film transistor 70 includes a first active layer 72; the switching thin film transistor 80 is disposed on the first substrate 10, and the switching thin film transistor 80 includes a second active layer 82; wherein, The first active layer 72 is disposed on the first substrate 10 , and the second active layer 82 is disposed on a side of the first active layer 72 away from the first substrate 10 .

In the embodiment of the present application, the first substrate 10 may be a bendable flexible substrate, for example, various plastic films, or polyethylene terephthalate, polyethersulfone, polycarbonate, polyimide and its derivatives.

As shown in FIG. 1a, in the embodiment of the present application, the display panel 001 further includes a second substrate 30 and a second buffer layer 40, wherein the second substrate 30 is disposed on the side of the first substrate 10 away from the driving thin film transistor 70, The second buffer layer 40 is disposed between the first substrate 10 and the second substrate 30 . Specifically, the second substrate 30 can also be disposed on the side of the first substrate 10 close to the driving thin film transistor 70 (not shown in the figure), and the second buffer layer 40 can be disposed on the side of the second substrate 30 away from the first substrate 10 .

In this embodiment of the present application, the display panel 001 further includes a first buffer layer 20 , a first dielectric layer 50 , a first gate insulating layer 60 , a second gate insulating layer 90 and a third gate insulating layer that are stacked in sequence 100 and the second dielectric layer 110 . Preferably, the first active layer 72 is disposed on the first dielectric layer 50 .

In the embodiment of the present application, the driving thin film transistor 70 further includes a first gate electrode 71, the switching thin film transistor further includes a second gate electrode 81, and the first gate electrode 71 and the second gate electrode 81 are disposed in the same layer on the first gate insulation on layer 60. The second active layer 82 is disposed on the second gate insulating layer 90 .

In the embodiment of the present application, as shown in FIG. 1 a , the second active layer 82 is disposed on the side of the second gate electrode 81 away from the first substrate 10 . Optionally, the second active layer may also be disposed between the second gate electrode 81 and the first substrate 10 .

In this embodiment of the present application, the switching TFT 80 is a top-gate transistor or a bottom-gate transistor, and the driving TFT 70 and the switching TFT 80 may be the same as a top-gate transistor or a bottom-gate transistor, or the switching TFT 80 may be a top-gate transistor , the driving thin film transistor is a bottom gate transistor, preferably, as shown in FIG. 1a, the switching thin film transistor 80 is a bottom gate transistor, and the driving thin film transistor is a top gate transistor.

In the embodiment of the present application, the driving thin film transistor 70 further includes a first electrode 73 , and the switching thin film transistor 80 further includes a second electrode 83 . The first electrode 73 and the second electrode 83 are disposed in the same layer and are electrically connected. Specifically, the first electrode 73 of the driving thin film transistor 70 includes a first source electrode 732 and a first drain electrode 731, and the second electrode 83 of the switching thin film transistor 80 includes a second source electrode 832 and a second drain electrode 831, wherein the first A source electrode 732 , a first drain electrode 731 , a second source electrode 832 and a second drain electrode 831 are disposed on the second dielectric layer 110 in the same layer, and the first source electrode 732 and the second source electrode 832 are electrically connected. The first source electrode 732 and the first drain electrode 731 are electrically connected to the first active layer 72 through vias, respectively, and the second source electrode 832 and the second drain electrode 831 are electrically connected to the second active layer through vias, respectively. 82.

In this embodiment of the present application, as shown in FIG. 1b, T1 is a driving thin film transistor, and T2 is a switching thin film transistor, wherein in the present application, the second active layer 82 of the switching thin film transistor T2 is moved up to the second gate 81 On the side away from the first substrate, specifically, the second active layer 82 of the switching thin film transistor T2 is disposed on the second gate insulating layer 90 . The dotted line connecting the source and drain of the switching thin film transistor T2 in FIG. 1b indicates that the channels of the switching thin film transistor T2 and other switching thin film transistors are not on the same plane.

It should be noted that, in the embodiments of the present application, the driving thin film transistor is a transistor used to control the current flowing through the light emitting diode in the pixel circuit; the switching thin film transistor may be other transistors except the driving transistor in the pixel circuit.

In the embodiment of the present application, the driving thin film transistor 70 further includes a third gate electrode 74 corresponding to the first gate electrode 71 , and the third gate electrode 74 is disposed on a side of the first gate electrode 71 away from the first substrate 10 . Specifically, the third gate electrode 74 is disposed on the third gate insulating layer 100 . The first gate 71 and the third gate 74 form a capacitor.

In the embodiment of the present application, the materials of the first active layer 72 and the second active layer 82 both include low temperature polysilicon. Specifically, the materials of the first active layer 72 and the second active layer 82 include but are not limited to silicon-based materials, such as amorphous silicon, low temperature polysilicon, etc.; metal oxide semiconductors, such as amorphous indium gallium zinc oxide, zinc oxide , zinc oxynitride, indium zinc tin oxide, etc.; and organic materials, such as hexathiophene, polythiophene, etc. Among them, the low temperature polysilicon material has fast electron mobility. The use of low temperature polysilicon material can make the thin film circuit smaller and thinner, and the power consumption of the circuit itself is also lower, thereby improving the resolution and stability of the display panel. In addition, the carrier mobility of oxide semiconductor materials is high, which is conducive to improving the stability of thin film transistors, and oxide semiconductor materials have the advantages of transparency to visible light, low process temperature, and large-area fabrication. Applied to the display area of the display panel, it can effectively improve the pixel density, aperture ratio and brightness of the display area. At the same time, it can also improve the display quality of the display panel by improving the stability of the oxide thin film transistor to avoid image afterimage or uneven brightness. question.

It should be noted that the driving thin film transistor 70 in the embodiment of the present invention may be an NMOS transistor or a PMOS transistor, and the switching thin film transistor 80 may also be an NMOS transistor or a PMOS transistor. The channel type is not limited.

In the embodiment of the present application, the display panel 001 adopts a top-gate structure driving thin film transistor 70 and a bottom gate structure switching thin film transistor 80 . Combining the advantages of the two transistor structures enables the display panel to have both a faster switching speed and a larger drive current, thereby improving the display performance of the display panel 001 . At the same time, such a structure design is conducive to simultaneously forming the first transistor of the top-gate structure and the second transistor of the bottom-gate structure of the display panel 001 in the same process, and the process is easy to implement and cost saving.

Embodiments of the present application provide a display panel and a manufacturing method thereof. The display panel includes: a first substrate 10 , a driving thin film transistor 70 and a switching thin film transistor 80 ; the driving thin film transistor 70 is disposed on the first substrate 10 , and the driving thin film transistor 70 It includes a first gate 71 and a first active layer 72; the switching thin film transistor 80 is disposed on the first substrate 10, and the switching thin film transistor 80 includes a second gate 81 and a second active layer 82; wherein, the first gate 71 and the second gate 81 are arranged in the same layer; the first active layer 72 is arranged on the side of the first gate 71 close to the first substrate 10, and the second active layer 82 is arranged on the second gate 81 away from the first substrate 10 side. In the display panel provided by the present application, the second active layer 82 of the switching thin film transistor 80 is disposed on the side of the second gate 81 away from the first substrate 10 , that is, the second active layer 82 and the first substrate are added. The distance between 10 and 10 solves the problem that the reliability of the switching thin film transistor 80 is reduced due to the polarization phenomenon of the first substrate 10, thereby affecting the display effect of the display panel.

As a specific implementation manner of the present application, please refer to FIG. 2a, FIG. 2a is a schematic diagram of a second structure of a display panel provided by an embodiment of the present application; FIG. 2b is a schematic diagram of a third structure of a display panel provided by an embodiment of the present application; As shown in FIG. 1 a and FIG. 2 a , an embodiment of the present application provides a display panel 002 . The difference between the display panel 002 and the display panel 001 is that the display panel 002 further includes a first auxiliary electrode corresponding to the second active layer 82 . 120 , the first auxiliary electrode 120 is disposed between the first substrate 10 and the second gate electrode 81 .

In the embodiment of the present application, the first auxiliary electrode 120 is disposed on the first buffer layer 20 . The orthographic projection of the second active layer 82 on the first substrate 10 covers the orthographic projection of the first auxiliary electrode 120 on the first substrate 10 . Specifically, the orthographic projection of the entire thickness region of the second active layer 82 on the first substrate 10 is located within the orthographic projection of the corresponding first auxiliary electrode 120 on the first substrate 10 , which is equivalent to being on the first substrate 10 The shielding structure arranged between the switching thin film transistor 80 and the switching thin film transistor 80 can effectively shield the influence of the mobile charges in the organic film layer or the inorganic film layer between the first substrate 10 and the switching thin film transistor 80 on the second active layer 82, thereby improving the The reliability of the switching thin film transistor 80 improves the stability and display effect of the display panel, and solves the problem that the reliability of the switching thin film transistor 80 is reduced due to the polarization phenomenon of the first substrate 10, thereby affecting the display effect of the display panel.

In this embodiment of the present application, as shown in FIG. 2 b , the first auxiliary electrode 120 may also be disposed on the first substrate 10 .

In the embodiment of the present application, the first auxiliary electrode 120 is electrically connected to the second gate electrode 81 through the first via hole 121 . The first auxiliary electrode 120 is electrically connected to the second gate 81 through the first via hole 121, which can enhance the shielding effect of the first auxiliary electrode 120 on mobile charges, and at the same time, can compensate the threshold voltage of the switching thin film transistor 80, so that the The potential of the switching thin film transistor 80 is stable, so that the light emission brightness is stable.

In the embodiment of the present application, the display panel 002 adopts a top-gate structure driving thin film transistor 70 and a dual-gate structure switching thin film transistor 80, wherein the driving thin film transistor 70 is a driving transistor, and the switching thin film transistor 80 is a switching transistor. Combining the advantages of the two transistor structures enables the display panel to have both a faster switching speed and a larger drive current, thereby improving the display performance of the display panel 002 . At the same time, such a structure design facilitates the simultaneous formation of the first transistor of the top-gate structure and the second transistor of the double-gate structure of the display panel 002 in the same process, which is easy to implement and cost-effective.

The display panel 002 provided by the present application can effectively shield the mobile charges in the organic film layer or the inorganic film layer between the first substrate 10 and the switching thin film transistor 80 by arranging a shielding structure between the first substrate 10 and the switching thin film transistor 80 Therefore, the reliability of the switching thin film transistor 80 is improved, the stability and display effect of the display panel are improved, and the reliability of the switching thin film transistor 80 is reduced due to the polarization phenomenon of the first substrate 10. , which further affects the display effect of the display panel.

As a specific implementation manner of the present application, please refer to FIG. 3 , which is a schematic diagram of a fourth structure of a display panel provided by an embodiment of the present application; as shown in FIGS. 1 a to 3 , an embodiment of the present application provides a display panel 003, the difference between the display panel 003 and the display panel 002 is that the display panel 003 further includes a second auxiliary electrode 130 arranged corresponding to the first active layer 72, and the second auxiliary electrode 130 is arranged on the first substrate 10 and the first active layer 72. between layers 72.

In the embodiment of the present application, the first auxiliary electrode 120 and the second auxiliary electrode 130 are disposed in the same layer and are electrically connected through the connecting wires 131 . Specifically, the first auxiliary electrode 120 and the second auxiliary electrode 130 are disposed on the first substrate 10 in the same layer. It should be noted that the first auxiliary electrode 120 and the second auxiliary electrode 130 can also be disposed on the first buffer layer 20 in the same layer, as long as the film layer disposed between the first active layer 72 and the first substrate 10 is satisfied That's it.

It should be noted that the first auxiliary electrode 120 and the second auxiliary electrode 130 may be disposed in different layers, for example, the first auxiliary electrode 120 may be disposed on the first substrate 10 and the second auxiliary electrode 130 may be disposed on the first buffer layer 20 , or , the first auxiliary electrode 120 is disposed on the first buffer layer 20 , and the second auxiliary electrode 130 is disposed on the first substrate 10 . Those skilled in the art can adjust according to actual needs, which is not limited in this application.

In this embodiment of the present application, the orthographic projection of the first auxiliary electrode 120 on the first substrate 10 covers the orthographic projection of the second active layer 82 on the first substrate 10 ; the orthographic projection of the second auxiliary electrode 130 on the first substrate 10 The orthographic projection covers the orthographic projection of the first active layer 72 on the first substrate 10 . Specifically, the orthographic projections of the entire thickness regions of the first active layer 72 and the second active layer 82 on the first substrate 10 are located on the first substrate 10 of the corresponding first auxiliary electrodes 120 and the second auxiliary electrodes 130 . Within the orthographic projection of the first active layer 72 and the second active layer 82, the influence of the mobile charges under the first active layer 72 and the second active layer 82 on the first active layer 72 and the second active layer 82 can be shielded. The first auxiliary electrode 120 and the second auxiliary electrode 130 are disposed on the same layer and are electrically connected through the connecting wires 131, which are equivalent to the shielding structure disposed between the first substrate 10, the driving thin film transistor 70 and the switching thin film transistor 80, and can effectively The influence of the mobile charges in the organic film layer or the inorganic film layer between the first substrate 10 and the driving thin film transistor 70 and the switching thin film transistor 80 on the first active layer 72 and the second active layer 82 is shielded, thereby improving the driving thin film The reliability of the transistor 70 and the switching thin film transistor 80 improves the stability and display effect of the display panel.

On the other hand, the present application also provides a manufacturing method of a display panel, please refer to FIG. 4 , FIG. 4 is a manufacturing flowchart of a display panel provided by an embodiment of the present application, including the following steps:

S10 , forming the first active layer 72 of the driving thin film transistor 70 on the first substrate 10 .

In the embodiment of the present application, the first substrate 10 may be a bendable flexible substrate, for example, various plastic films, or polyethylene terephthalate, polyethersulfone, polycarbonate, polyimide and its derivatives.

In the embodiment of the present application, the step of forming the first active layer 72 of the driving thin film transistor 70 on the first substrate 10 specifically includes: forming the second buffer layer 40 on the second substrate 30 ; forming the second buffer layer 40 on the second buffer layer 40 The first substrate 10 is formed thereon; the first buffer layer 20 is formed on the first substrate 10 , the first dielectric layer 50 is formed on the first buffer layer 20 , and the first active layer 72 is formed on the first dielectric layer 50 .

In the embodiment of the present application, in the step of forming the first active layer 72 of the driving thin film transistor 70 on the first substrate 10 , the first buffer layer 20 is formed on the first substrate 10 , and the first buffer layer 20 is formed on the first buffer layer 20 . The first auxiliary electrode 120 corresponding to the second active layer 82 and the second auxiliary electrode 130 corresponding to the first active layer 72, wherein the first auxiliary electrode 120 and the second auxiliary electrode 130 are electrically connected, and the first auxiliary electrode 120 is electrically connected to the second auxiliary electrode 130. A first dielectric layer 50 is formed on the electrode 120 and the second auxiliary electrode 130 , and a first active layer 72 is formed on the first dielectric layer 50 .

S20 , forming the second active layer 82 of the switching thin film transistor 80 on the side of the first active layer 72 away from the first substrate 10 .

In the embodiment of the present application, the step of forming the second active layer 82 of the switching thin film transistor 80 on the side of the first active layer 72 away from the first substrate 10 specifically includes: forming a second active layer on the first active layer 72 A gate insulating layer 60 , a first gate 71 and a second gate 81 are formed in the same layer on the first gate insulating layer 60 . A second gate insulating layer 90 is formed on the first gate 71 and the second gate 81, and a second active layer 82 corresponding to the second gate 81 is formed on the second insulating layer; A third gate insulating layer 100 is formed on the third gate insulating layer 100, and a third gate 74 corresponding to the first gate 71 is formed on the third gate insulating layer 100, wherein the first gate 71 and the third gate 74 form a capacitor ; A second dielectric layer 110 is formed on the third gate 74, a first electrode 73 and a second electrode 83 are formed in the same layer on the second dielectric layer 110, and the first electrode 73 and the second electrode 83 are electrically connected, wherein , the first electrode 73 includes a first source electrode 732 and a first drain electrode 731, and the first source electrode 732 and the first drain electrode 731 are electrically connected to the first active layer 72 through via holes to form a top-gate structure driving film The transistor 70; the second electrode 83 includes a second source electrode 832 and a second drain electrode 831, and the second source electrode 832 and the second drain electrode 831 are electrically connected to the second active layer 82 through a via hole to form a bottom gate structure. The switching thin film transistor 80 .

In the embodiment of the present application, the materials of the first active layer 72 and the second active layer 82 both include low temperature polysilicon. Specifically, the materials of the first active layer 72 and the second active layer 82 include but are not limited to silicon-based materials, such as amorphous silicon, low temperature polysilicon, etc.; metal oxide semiconductors, such as amorphous indium gallium zinc oxide, zinc oxide , zinc oxynitride, indium zinc tin oxide, etc.; and organic materials, such as hexathiophene, polythiophene, etc. Among them, the low temperature polysilicon material has fast electron mobility. The use of low temperature polysilicon material can make the thin film circuit smaller and thinner, and the power consumption of the circuit itself is also lower, thereby improving the resolution and stability of the display panel. In addition, the carrier mobility of oxide semiconductor materials is high, which is conducive to improving the stability of thin film transistors, and oxide semiconductor materials have the advantages of transparency to visible light, low process temperature, and large-area fabrication. Applied to the display area of the display panel, it can effectively improve the pixel density, aperture ratio and brightness of the display area. At the same time, it can also improve the display quality of the display panel by improving the stability of the oxide thin film transistor to avoid image afterimage or uneven brightness. question.

It should be noted that the driving thin film transistor 70 in the embodiment of the present invention may be an NMOS transistor or a PMOS transistor, and the switching thin film transistor 80 may also be an NMOS transistor or a PMOS transistor. The channel type is not limited.

Embodiments of the present application provide a display panel and a manufacturing method thereof. The display panel includes: a first substrate 10 , a driving thin film transistor 70 and a switching thin film transistor 80 ; the driving thin film transistor 70 is disposed on the first substrate 10 , and the driving thin film transistor 70 It includes a first gate 71 and a first active layer 72; the switching thin film transistor 80 is disposed on the first substrate 10, and the switching thin film transistor 80 includes a second gate 81 and a second active layer 82; wherein, the first gate 71 and the second gate 81 are arranged in the same layer; the first active layer 72 is arranged on the side of the first gate 71 close to the first substrate 10, and the second active layer 82 is arranged on the second gate 81 away from the first substrate 10 side. In the display panel provided by the present application, the second active layer 82 of the switching thin film transistor 80 is disposed on the side of the second gate 81 away from the first substrate 10 , that is, the second active layer 82 and the first substrate are added. The distance between 10 and 10 solves the problem that the reliability of the switching thin film transistor 80 is reduced due to the polarization phenomenon of the first substrate 10, thereby affecting the display effect of the display panel.

A display panel and a manufacturing method thereof provided by the embodiments of the present application have been described in detail above, and the principles and implementations of the present application are described with specific examples. The method of the application and its core idea; at the same time, for those skilled in the art, according to the idea of the application, there will be changes in the specific implementation and application scope. In summary, the content of this description should not be construed as LIMITATIONS ON THIS APPLICATION.

Claims (10)

1. A display panel, comprising:

a first substrate;

a driving thin film transistor disposed on the first substrate, the driving thin film transistor including a first active layer;

a switching thin film transistor disposed on the first substrate, the switching thin film transistor including a second active layer; wherein,

the first active layer is arranged on the first substrate, and the second active layer is arranged on one side, far away from the first substrate, of the first active layer.

2. The display panel according to claim 1, wherein the driving thin film transistor further comprises a first gate electrode, and the switching thin film transistor further comprises a second gate electrode, and the first gate electrode and the second gate electrode are disposed on the same layer.

3. The display panel according to claim 2, wherein the second active layer is disposed on a side of the second gate electrode away from the first substrate.

4. The display panel according to claim 2, wherein the second active layer is provided between the second gate electrode and the first substrate.

5. The display panel according to claim 1, wherein the switching thin film transistor is a top-gate transistor or a bottom-gate transistor, and/or wherein the driving thin film transistor is a top-gate transistor or a bottom-gate transistor.

6. The display panel according to claim 2, further comprising a first auxiliary electrode disposed corresponding to the second active layer, wherein the first auxiliary electrode is disposed between the first substrate and the second gate electrode.

7. The display panel according to claim 6, further comprising a second auxiliary electrode provided corresponding to the first active layer, the second auxiliary electrode being provided between the first substrate and the first active layer.

8. The display panel according to claim 7, wherein the first auxiliary electrode, the second auxiliary electrode, and the second gate are electrically connected.

9. The display panel according to claim 7 or 8, wherein an orthographic projection of the first auxiliary electrode on the first substrate covers an orthographic projection of the second active layer on the first substrate; an orthographic projection of the second auxiliary electrode on the first substrate covers an orthographic projection of the first active layer on the first substrate.

10. A manufacturing method of a display panel is characterized by comprising the following steps:

forming a first active layer of a driving thin film transistor on a first substrate;

and forming a second active layer of the switching thin film transistor on one side of the first active layer far away from the first substrate.

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