CN114327516A - Circuit and method for modifying chip system memory to burn - Google Patents
Circuit and method for modifying chip system memory to burn Download PDFInfo
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Abstract
本发明公开了一种修改芯片系统存储器进行烧录的电路及方法,包括以下步骤:(1)编写FPGA工程文件;(2)将工程文件烧录至FPGA内;(3)完成电路连接;(4)开始烧录程序,由工程文件借助bist pad向flash输出控制指令从而修改系统存储器数据;(5)检测程序是否烧录成功。本发明利用芯片中flash的bist test pad,进入bist模式,通过fpga板连接待测芯片,给bist串行接口发送相应的擦写指令和内容,在芯片出厂后也可对系统存储器内容进行修改,便于测试BootLoader程序,方便芯片对flash的调试测试。
The invention discloses a circuit and method for modifying a chip system memory for programming, comprising the following steps: (1) writing an FPGA project file; (2) programming the project file into the FPGA; (3) completing the circuit connection; ( 4) Start burning the program, and output control commands to the flash from the project file with the help of the bist pad to modify the system memory data; (5) Check whether the program is successfully burned. The invention uses the flash bist test pad in the chip to enter the bist mode, connects the chip to be tested through the fpga board, sends the corresponding erasing and writing instructions and contents to the bist serial interface, and can also modify the contents of the system memory after the chip leaves the factory. It is convenient to test the BootLoader program, and it is convenient for the debugging and testing of the chip to the flash.
Description
技术领域technical field
本发明涉及一种修改芯片系统存储器进行烧录的电路及方法,属于芯片测试技术领域。The invention relates to a circuit and a method for modifying a chip system memory for programming, belonging to the technical field of chip testing.
背景技术Background technique
flash是存储芯片的一种,通过特定的程序可以修改里面的数据。flash在电子以及半导体领域内往往表示Flash Memory的意思,即平时所说的“闪存”。flash存储器又称闪存,它结合了ROM和RAM的长处,不仅具备电子可擦除可编程(EEPROM)的性能,还可以快速读取数据(NVRAM的优势),使数据不会因为断电而丢失。Flash is a type of memory chip, and the data in it can be modified by a specific program. Flash often means Flash Memory in the field of electronics and semiconductors, which is usually referred to as "flash memory". Flash memory, also known as flash memory, combines the advantages of ROM and RAM, not only has the performance of electronically erasable and programmable (EEPROM), but also can quickly read data (the advantage of NVRAM), so that data will not be lost due to power failure .
flash有3种启动模式,其中一种是借助system memory(系统存储器)中的BootLoader启动。系统存储器包含BootLoader程序,BootLoader程序可用于使用USART1串行接口对闪存重新编程。系统存储器通常只能够在芯片生产制造时写入内容,用户无法修改内容。为了能够测试所写的BootLoader程序,以及方便对flash的调试测试,我们需要在芯片出厂后也能够对系统存储器内容进行修改。The flash has 3 startup modes, one of which is to start with the BootLoader in the system memory (system memory). The system memory contains the BootLoader program, which can be used to reprogram the flash memory using the USART1 serial interface. System memory can usually only be written to when the chip is manufactured and cannot be modified by the user. In order to be able to test the written BootLoader program and to facilitate the debugging and testing of the flash, we need to be able to modify the system memory content after the chip leaves the factory.
此时,我们提出了一种修改芯片系统存储器进行烧录的电路及方法,flash的bist电路本意是为了解决测试flash区域物理故障和成品率的问题。工厂会通过test PAD进入测试模式,按照bist信号顺序发送不同的信号进入不同的测试模式,以测试flash存储区域是否有损坏,并记录坏区地址,用冗余扇区替换。根据此原理,在芯片出厂后测试时,我们利用bist test pad,进入bist模式,通过FPGA板连接芯片,给bist串行接口发送相应的擦写指令和内容,即可更改系统存储器里的内容,进行BootLoader测试。At this time, we propose a circuit and method for modifying the memory of the chip system for programming. The bist circuit of the flash is intended to solve the problem of testing the physical faults and yield of the flash area. The factory will enter the test mode through the test PAD, and send different signals to enter different test modes according to the sequence of the bist signal to test whether the flash storage area is damaged, and record the bad area address and replace it with redundant sectors. According to this principle, when the chip is tested after leaving the factory, we use the bist test pad to enter the bist mode, connect the chip through the FPGA board, and send the corresponding erase and write instructions and content to the bist serial interface, and then the content in the system memory can be changed. Run the BootLoader test.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种修改芯片系统存储器进行烧录的电路及方法,旨在更改系统存储器里的内容,便于后续进行BootLoader测试。The purpose of the present invention is to provide a circuit and method for modifying the system memory of a chip for programming, aiming at changing the content in the system memory, so as to facilitate subsequent BootLoader testing.
为实现上述目的,本发明提供如下技术方案:一种修改芯片系统存储器进行烧录的电路,包括FPGA、MCU测试板、待测芯片、下载器和上位机,待测芯片安装于MCU测试板上,使得flash与MCU测试板的对应引脚相连接,FPGA和MCU测试板电源引脚接入电源,FPGA和MCU测试板GND引脚接地,下载器一端与FPGA通过串口连接,下载器另一端与上位机相连接,FPGA与MCU测试板相连接,使得 FPGA的TDI、TCK、TDO、STROBE引脚与flash的 TDI、TCK、TDO、STROBE引脚对应连接,flash的TESTEN引脚置为高电平。In order to achieve the above purpose, the present invention provides the following technical solutions: a circuit for modifying a chip system memory for programming, including an FPGA, an MCU test board, a chip to be tested, a downloader and a host computer, and the chip to be tested is installed on the MCU test board. , so that the flash is connected to the corresponding pins of the MCU test board, the power pins of the FPGA and MCU test boards are connected to the power supply, the GND pins of the FPGA and MCU test boards are grounded, one end of the downloader is connected to the FPGA through the serial port, and the other end of the downloader is connected to The host computer is connected, and the FPGA is connected with the MCU test board, so that the TDI, TCK, TDO, STROBE pins of the FPGA are connected to the TDI, TCK, TDO, and STROBE pins of the flash correspondingly, and the TESTEN pin of the flash is set to high level .
本发明还公开了一种修改芯片系统存储器进行烧录的方法,采用上述的修改芯片系统存储器进行烧录的电路,具体包括以下步骤:The invention also discloses a method for modifying the chip system memory for programming, using the above-mentioned circuit for modifying the chip system memory for programming, which specifically includes the following steps:
(1)编写烧录所需的FPGA工程文件;(1) Write the FPGA project files required for programming;
(2)将工程文件烧录至FPGA内;(2) Burn the project file into the FPGA;
(3)完成上述的电路连接;(3) Complete the above circuit connection;
(4)按下FPGA的reset键,开始烧录程序,FPGA与flash通过bist pad通信,由工程文件借助bist pad向flash输出控制指令从而修改系统存储器数据;(4) Press the reset button of the FPGA to start programming the program. The FPGA communicates with the flash through the bist pad, and the project file uses the bist pad to output control commands to the flash to modify the system memory data;
(5)检测程序是否烧录成功,若是,则程序烧录完成,若不是,则重回步骤(4)后继续执行程序。(5) Check whether the program has been programmed successfully. If so, the program programming is completed. If not, go back to step (4) and continue to execute the program.
进一步地,上述修改芯片系统存储器进行烧录的方法,其中:所述步骤(1)中编写FPGA工程文件遵循flash IP bist协议,工程文件中的内容包括:将flash接口信号ERASE置高电平用于擦除flash内原系统存储器,将flash接口信号PROG置高电平用于烧录程序,在flash接口信号A和flash接口信号DIN分别写入地址和数据,实现系统存储器的修改。Further, the above-mentioned method for modifying the memory of the chip system for programming, wherein: the FPGA project file written in the step (1) follows the flash IP bist protocol, and the content in the project file includes: setting the flash interface signal ERASE to a high level to use To erase the original system memory in the flash, set the flash interface signal PROG to a high level for programming the program, and write the address and data in the flash interface signal A and the flash interface signal DIN respectively to realize the modification of the system memory.
进一步地,上述修改芯片系统存储器进行烧录的方法,其中:所述步骤(4)中FPGA的工程文件借助bist pad向flash输出控制指令从而修改系统存储器数据具体包括以下步骤:1.1、输出密码,进入测试模式test_mode;1.2、输出erase指令,将芯片内系统存储器内容擦除;1.3、输出program指以及prog地址和数据。Further, the above-mentioned method for modifying the system memory of a chip for programming, wherein: in the step (4), the project file of the FPGA outputs a control command to the flash by means of the bist pad, thereby modifying the system memory data specifically includes the following steps: 1.1, outputting a password, Enter the test mode test_mode; 1.2, output the erase command to erase the content of the on-chip system memory; 1.3, output the program and prog addresses and data.
进一步地,上述修改芯片系统存储器进行烧录的方法,其中:所述步骤(5)中具体包括以下步骤:5.1、将待测芯片断电后重新上电;5.2、用数据线连接上位机和MCU测试板;5.3、打开串口工具连接串口;5.4、读取器件信息和选项字节,查看是否正确,若是则执行下一步骤,若不是,则返回步骤(4)重新烧录程序;5.5、下载程序;5.6查看MCU测试板是否会执行相应功能,若是则检测成功说明系统存储器修改成功,若不是,则返回步骤(4)重新烧录程序。Further, the above-mentioned method for modifying the memory of the chip system for programming, wherein: the step (5) specifically includes the following steps: 5.1. Power off the chip to be tested and then power it on again; 5.2. Use a data cable to connect the host computer and MCU test board; 5.3. Open the serial port tool to connect the serial port; 5.4. Read the device information and option bytes to check if they are correct, if so, go to the next step, if not, go back to step (4) to re-program the program; 5.5, Download the program; 5.6 Check whether the MCU test board will perform the corresponding function. If the detection is successful, it means that the system memory has been modified successfully. If not, return to step (4) to re-program the program.
进一步地,上述的修改芯片系统存储器进行烧录的方法,其中:所述步骤5.5中下载程序为跑马灯或流水灯程序。Further, in the above-mentioned method for modifying the memory of the chip system for programming, wherein: the downloaded program in the step 5.5 is a marquee or a running water program.
本发明的有益效果是:本发明通过利用芯片中flash的bist test pad,进入bist模式,通过fpga板连接待测芯片,给bist串行接口发送相应的擦写指令和内容,在芯片出厂后也可对系统存储器内容进行修改,便于测试BootLoader程序,方便芯片对flash的调试测试。The beneficial effects of the invention are as follows: the invention enters the bist mode by using the bist test pad of the flash in the chip, connects the chip to be tested through the fpga board, and sends the corresponding erasing and writing instructions and contents to the bist serial interface. The content of the system memory can be modified to facilitate the testing of the BootLoader program and the debugging and testing of the flash by the chip.
附图说明Description of drawings
图1是本发明FPGA与flash引脚连接电路示意图;1 is a schematic diagram of the connection circuit between FPGA and flash pins of the present invention;
图2是程序烧录流程图;Figure 2 is a flow chart of program burning;
图3是工程文件借助bist pad向flash输出控制指令流程图;Figure 3 is a flowchart of the project file outputting control instructions to the flash by means of the bist pad;
图4是flash IP bist协议示意图;Figure 4 is a schematic diagram of the flash IP bist protocol;
图5是程序烧录完成后检验流程图。Fig. 5 is the check flow chart after the program programming is completed.
具体实施方式Detailed ways
为能进一步了解本发明的发明内容、特点及功效,配合附图详细说明如下。In order to further understand the content, features and effects of the present invention, a detailed description is given below with the accompanying drawings.
请同时参考图1至图5,下面将结合附图对本发明一种修改芯片系统存储器进行烧录的电路及方法作详细说明。Please refer to FIG. 1 to FIG. 5 at the same time, and a circuit and method for modifying a system-on-a-chip memory for programming according to the present invention will be described in detail below with reference to the accompanying drawings.
如图1所示,本发明所述的一种借助flash bist测试机制修改芯片内系统存储器进行烧录的电路包括FPGA、MCU测试板、待测芯片、下载器和上位机,待测芯片安装于MCU测试板上,使得flash与MCU测试板的对应引脚相连接,FPGA和MCU测试板电源引脚接入电源,FPGA和MCU测试板GND引脚接地,下载器一端与FPGA通过串口连接,下载器另一端与上位机相连接,FPGA与MCU测试板相连接,使得 FPGA的TDI、TCK、TDO、STROBE引脚与flash的 TDI、TCK、TDO、STROBE引脚对应连接,flash的TESTEN引脚置为高电平。As shown in FIG. 1 , a circuit of the present invention that uses the flash bist test mechanism to modify the in-chip system memory for programming includes an FPGA, an MCU test board, a chip to be tested, a downloader and a host computer, and the chip to be tested is installed in the On the MCU test board, the flash is connected to the corresponding pins of the MCU test board, the power pins of the FPGA and MCU test boards are connected to the power supply, the GND pins of the FPGA and MCU test boards are grounded, and one end of the downloader is connected to the FPGA through the serial port. The other end of the device is connected to the host computer, and the FPGA is connected to the MCU test board, so that the TDI, TCK, TDO, STROBE pins of the FPGA are connected to the TDI, TCK, TDO, and STROBE pins of the flash correspondingly, and the TESTEN pin of the flash is set to high level.
具体地,TESTEN为测试模式使能信号,为高时进入测试模式。TCK为测试时钟,TDI为测试输入,TDO为测试输出,STROBE为输入信号是否有效的控制信号。控制信号STROBE低电平有效,如果 STROBE 为低电平,则串行输入引脚TDI 的测试激励信号将被输入。当STROBE 设置为高时,TDI 中的数据将被忽略。Specifically, TESTEN is the test mode enable signal, and when it is high, the test mode is entered. TCK is the test clock, TDI is the test input, TDO is the test output, and STROBE is the control signal for whether the input signal is valid. The control signal STROBE is active low, if STROBE is low, the test excitation signal of the serial input pin TDI will be input. When STROBE is set high, data in TDI will be ignored.
如图2所示,本发明还公开了一种借助flash bist测试机制修改芯片内系统存储器进行烧录的电路的方法,包括以下步骤:As shown in FIG. 2 , the present invention also discloses a method for modifying the circuit of the in-chip system memory for programming by means of the flash bist test mechanism, including the following steps:
(1)编写烧录所需的FPGA工程文件;(2)将工程文件烧录至FPGA内;(3)完成上述的电路连接;(4)按下FPGA的reset键,开始烧录程序,FPGA与flash通过bist pad通信,由工程文件借助bist pad向flash输出控制指令从而修改系统存储器数据;(5)检测程序是否烧录成功,若是,则程序烧录完成,若不是,则重回步骤(4)后继续执行程序。所述步骤(4)中烧录程序后需等待20~40秒响应时间,优选为30秒。(1) Write the FPGA project files required for programming; (2) Burn the project files into the FPGA; (3) Complete the above circuit connections; (4) Press the reset button of the FPGA to start the programming program, FPGA Communicate with the flash through the bist pad, and the project file uses the bist pad to output control commands to the flash to modify the system memory data; (5) Check whether the program is successfully burned, if so, the program burning is completed, if not, go back to the step ( 4) and then continue to execute the program. After burning the program in the step (4), it is necessary to wait for a response time of 20 to 40 seconds, preferably 30 seconds.
所述步骤(1)中编写FPGA工程文件遵循flash IP bist协议,工程文件中的内容包括:将flash接口信号ERASE置高电平用于擦除flash内原系统存储器,将flash接口信号PROG置高电平用于烧录程序,在flash接口信号A和flash接口信号DIN分别写入地址和数据,实现系统存储器的修改。The FPGA project file written in the step (1) follows the flash IP bist protocol. The contents of the project file include: setting the flash interface signal ERASE to a high level to erase the original system memory in the flash, and setting the flash interface signal PROG to a high level Ping is used for programming programs, and addresses and data are written in flash interface signal A and flash interface signal DIN respectively to realize the modification of system memory.
如图3所示,所述步骤(4)中FPGA的工程文件借助bist pad向flash输出控制指令从而修改系统存储器数据具体包括以下步骤:1.1、输出密码,进入测试模式test_mode;1.2、输出erase指令,将芯片内系统存储器内容擦除;1.3、输出program指以及prog地址和数据。步骤1.2和步骤1.3之间需等待响应时间。As shown in Figure 3, in the step (4), the project file of the FPGA outputs the control command to the flash by means of the bist pad to modify the system memory data, which specifically includes the following steps: 1.1, output the password, and enter the test mode test_mode; 1.2, output the erase command , erase the content of the on-chip system memory; 1.3, output program and prog address and data. Response time is required between steps 1.2 and 1.3.
FPGA与flash之间的通信,在上述串行接口发送的指令遵循flash IP bist协议,具体参考图4,图4显示了协议串行输入引脚 TDI 的输入时序和输入顺序,其中,测试时钟TCK一般的测试频率可以设为1MHz、10MHz或20 MHz。For the communication between the FPGA and the flash, the instructions sent on the above serial interface follow the flash IP bist protocol. Refer to Figure 4 for details. Figure 4 shows the input timing and input sequence of the protocol serial input pin TDI. Among them, the test clock TCK The general test frequency can be set to 1MHz, 10MHz or 20MHz.
FPGA的测试输出引脚TDI向flash的测试输入引脚TDI串行输入信号按以下顺序发送:CEb, DEEPPD, OEb, WEb, PROG, PROG2,ERASE, CHIP, NVR, TMEN, CONFEN, VREAD0,VREAD1,BYTE, A, DIN, msa, msb, msc, msd, freq0, freq1, Tprog_conf0, Tprog_conf1, Terase_conf0, Terase_conf1;其中,CEb至DIN是flash IP接口信号,包含使能信号、编程擦除控制、地址、数据信号等,用来控制flash工作。串行输入数据流中的信号 msa、msb、msc、msd、freq0和 freq1 用于定义测试模式和工作频率。Tprog_conf0,Tprog_conf1信号用于设置字编程时间TPROG,Terase_conf0,Terase_conf1信号用来设置扇区/块擦除时间 TERASE。The test output pin TDI of the FPGA sends the serial input signal to the test input pin TDI of the flash in the following order: CEb, DEEPPD, OEb, WEb, PROG, PROG2, ERASE, CHIP, NVR, TMEN, CONFEN, VREAD0, VREAD1, BYTE, A, DIN, msa, msb, msc, msd, freq0, freq1, Tprog_conf0, Tprog_conf1, Terase_conf0, Terase_conf1; where CEb to DIN are flash IP interface signals, including enable signal, program erase control, address, data Signals, etc., are used to control the flash work. The signals msa, msb, msc, msd, freq0, and freq1 in the serial input data stream are used to define the test mode and operating frequency. Tprog_conf0, Tprog_conf1 signals are used to set the word programming time TPROG, Terase_conf0, Terase_conf1 signals are used to set the sector/block erase time TERASE.
如图4所示,所述步骤(5)中具体包括以下步骤:5.1、将待测芯片断电后重新上电;5.2、用数据线连接上位机和MCU测试板;5.3、打开串口工具连接串口;5.4、读取器件信息和选项字节,查看是否正确,若是则执行下一步骤,若不是,则返回步骤(4)重新烧录程序;5.5、下载程序;5.6查看MCU测试板是否会执行相应功能,若是则检测成功说明系统存储器修改成功,若不是,则返回步骤(4)重新烧录程序。所述步骤5.5下载程序为跑马灯或流水灯程序,所述步骤5.6中查看MCU测试板其LED是否会根据程序执行相应的发光或熄灭。As shown in Figure 4, the step (5) specifically includes the following steps: 5.1. Power off the chip to be tested and then power it on again; 5.2. Connect the host computer and the MCU test board with a data cable; 5.3. Open the serial port tool to connect Serial port; 5.4. Read the device information and option bytes to see if they are correct. If so, go to the next step. If not, go back to step (4) to re-program the program; 5.5. Download the program; 5.6 Check whether the MCU test board will Execute the corresponding function. If the detection is successful, it means that the system memory has been modified successfully. If not, return to step (4) to re-program the program. The downloaded program in step 5.5 is a marquee or running water program. In step 5.6, check whether the LED of the MCU test board will light up or turn off according to the program.
通过以上描述可以看出,本发明通过利用芯片中flash的bist test pad,进入bist模式,通过fpga板连接待测芯片,给bist串行接口发送相应的擦写指令和内容,在芯片出厂后也可对系统存储器内容进行修改,便于测试BootLoader程序,方便芯片对flash的调试测试。It can be seen from the above description that the present invention enters the bist mode by using the bist test pad of the flash in the chip, connects the chip to be tested through the fpga board, and sends the corresponding erasing and writing instructions and contents to the bist serial interface. The content of the system memory can be modified to facilitate the testing of the BootLoader program and the debugging and testing of the flash by the chip.
当然,以上只是本发明的典型实例,除此之外,本发明还可以有其它多种具体实施方式,凡采用等同替换或等效变换形成的技术方案,均落在本发明要求保护的范围之内。Of course, the above are only typical examples of the present invention. In addition, the present invention can also have other various specific embodiments. All technical solutions formed by equivalent replacement or equivalent transformation fall within the scope of protection of the present invention. Inside.
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