CN114326357A - Preparation method of alkali metal atomic gas chamber and atomic gas chamber - Google Patents
Preparation method of alkali metal atomic gas chamber and atomic gas chamber Download PDFInfo
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- CN114326357A CN114326357A CN202210051435.3A CN202210051435A CN114326357A CN 114326357 A CN114326357 A CN 114326357A CN 202210051435 A CN202210051435 A CN 202210051435A CN 114326357 A CN114326357 A CN 114326357A
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Abstract
The invention discloses a preparation method of an alkali metal atom air chamber and the atom air chamber, the preparation process adopts the steps of punching a monocrystalline silicon plate, cutting a unit, and bonding and sealing a glass sheet anode, the preparation efficiency and the preparation precision of the atom air chamber can be greatly improved, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of atomic optics and atomic clocks, in particular to a preparation method of an alkali metal atomic gas chamber and the atomic gas chamber.
Background
With the rapid development of quantum technology and atomic physics, an alkali metal atomic gas chamber is a key core component for manufacturing a magnetometer, an atomic clock and an atomic gyroscope, at present, the atomic gas chamber is manufactured by technologies such as glass shell fusion, glass blowing, etching, bonding and the like, the atomic gas chamber has more processes, low precision, large size, low manufacturing efficiency and high cost, and is not suitable for industrial large-scale production, and secondly, because the working operation temperature of the alkali metal atomic gas chamber is generally 80-85 ℃, the thermal conductivity of a glass material is poor, and a heater with higher power needs to be matched.
Disclosure of Invention
In order to overcome the technical problems in the background art, the invention provides a preparation method of an alkali metal atom gas chamber and an atom gas chamber.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the invention discloses a preparation method for manufacturing an alkali metal atom air chamber by adopting a monocrystalline silicon material, which comprises the following specific preparation steps:
A. opening a hole: milling a through hole on a monocrystalline silicon plate made of monocrystalline silicon material by adopting a high-speed milling process;
B. cutting: cutting the single crystal silicon plate along the periphery of the opened through hole to form a square atomic gas chamber cube;
C. and (3) arranging a filling hole: forming a filling hole for filling alkali metal atoms on one end face, which is not provided with the through hole, of the atomic gas chamber square body through a high-speed milling process, wherein the filling hole is communicated with the through hole;
D. grinding and polishing: grinding and polishing the surfaces of the atomic gas chamber cube and the inner surfaces of the through holes after the holes are formed;
E. cleaning: carrying out deionized water ultrasonic cleaning on the ground and polished atomic gas chamber cube;
F. bonding and sealing: the glass sheet with the size consistent with that of the end face of the atomic gas chamber square body with the through hole is adopted to be in anodic bonding with the end face of the atomic gas chamber square body with the through hole, the through hole of the closed atomic gas chamber square body forms an atomic gas cavity, and the glass sheet on the opposite end face forms an optical window;
G. and connecting a filling pipe to the filling hole to finish the preparation of the alkali metal atom air chamber.
Preferably, in the step B, the second through hole is formed by high-speed milling process after the atomic gas chamber cube is cut, and central axes of the two through holes are vertically intersected. Two through holes are formed to form two optical window channels, bidirectional laser irradiation can be realized, the central axes of the two through holes are intersected vertically, the milling and drilling precision is improved easily, the through holes are located in the center of the end face of the square body of the atomic gas chamber, and the machined atomic gas chamber is small in overall size, compact in structure and low in working and operating power consumption.
Preferably, in the step a, the thickness of the monocrystalline silicon plate is more than 2.1mm, more than one through hole is milled in the monocrystalline silicon plate, the diameter of the through hole is 1.5 mm, and the distance between the edges of the adjacent through holes is not less than 1.8 mm. The atom gas chamber cube is miniaturized, enough cutting space is reserved, and batch manufacturing is realized.
Preferably, in the step B, after cutting, the through hole is located at the center of the end face of the square body of the atomic gas chamber, so that the atomic gas chamber has a small overall size and a compact structure.
Preferably, in the step B, the cut atomic gas cell cube is a cube, and the length, width and height of the cube are 2 × 2 × 2 mm. The cubic atomic gas chamber cube with a compact structure can be manufactured, the miniaturization and the light weight of relevant magnetometers, atomic clocks and atomic gyroscope mobile equipment are realized, and the power consumption is reduced.
Preferably, in the step D, the surface of the atomic gas chamber cube is ground and polished to a surface roughness Ra value of not more than 0.002 μm, and the inner surface of the through hole is polished to a surface roughness Ra value of not more than 0.001 μm by using a swen fluid polishing process. The surface of the glass reaches the bonding requirement with glass, the extremely high light transmittance of an optical window is realized, the polishing efficiency of the inner surface of the through hole is high by adopting the Schmann's fluid polishing process, the effect is good, and the material is prevented from being damaged.
Preferably, in the step F, the glass sheet is alkali-free optical glass and has a thickness of 0.2 mm. The optical window has extremely high light transmittance, and the alkali-free glass avoids the adverse effects of interference and the like on the work of alkali metal atoms.
Preferably, in the step G, a filling pipe is anodically bonded to the filling hole.
The invention also discloses an alkali metal atomic gas chamber which comprises an atomic gas chamber square body made of single crystal silicon materials, wherein the square atomic gas chamber square body is provided with a through hole formed by high-speed milling, glass sheets serving as optical windows are respectively connected to the end surfaces of the atomic gas chamber square body provided with the through hole in an anodic bonding mode, the glass sheets surround and seal the through hole to form an atomic gas cavity, one end surface, which is not provided with the through hole, of the atomic gas chamber square body is provided with a filling hole used for filling alkali metal atoms by high-speed milling, and the filling hole is communicated with the through hole.
Preferably, the through hole formed in the atom air chamber square body is one or two circular holes, and when the through hole is two circular holes, the central axes of the two through holes are vertically intersected. The atomic gas chamber cavity formed by the two through holes can form two optical window channels, bidirectional laser irradiation can be realized, the milling and drilling precision can be improved more easily due to the vertical intersection of the central axes of the two through holes, and the machined atomic gas chamber is small in overall size, compact in structure and lower in working and operating power consumption.
Preferably, the through hole is located in the center of the end face of the square atomic gas chamber, and the atomic gas chamber is small in overall size and compact in structure.
Preferably, the filling hole is located in the center of the end face of the atomic gas chamber square body, and the central axis of the filling hole is perpendicularly intersected with the central axis of the through hole, so that the milling and tapping machining precision is improved, and the filling pipe is in bonded connection.
Preferably, the atomic gas chamber cube is a cube, the length, width and height of the cube are respectively 2 × 2 × 2mm, the diameter of the through hole is 1.5 mm, the diameter of the filling hole is 0.8 mm, the filling hole is connected with a filling pipe, and the glass sheet is alkali-free optical glass and has a thickness of 0.2 mm. The cube is beneficial to milling processing, the structure of the atomic air chamber is more compact, and light weight, miniaturization and low energy consumption are realized.
The invention has the beneficial effects that: the invention adopts the monocrystalline silicon material to prepare the alkali metal atomic gas chamber, the monocrystalline silicon material has good thermal conductivity, only needs smaller heating power during the working operation, can greatly reduce the energy consumption of the device when being applied to mobile equipment of magnetometers, atomic clocks and atomic gyroscopes, and can simultaneously reduce the weight and the volume of a power supply.
Two through holes can be opened in the atom air chamber cube, two optical window channels can be formed in the atom air chamber cavity formed by the two through holes, bidirectional laser irradiation can be realized, the milling and drilling precision can be improved easily due to the vertical intersection of the central axes of the two through holes, and the atom air chamber formed by processing is small in overall size, compact in structure and low in working and operating power consumption.
According to the preparation process, the monocrystalline silicon plate is subjected to high-speed milling, accurate hole forming, unit cutting and glass sheet anodic bonding sealing, the monocrystalline silicon material and the glass have good bonding characteristics, the manufacturing efficiency and the manufacturing precision of the atomic gas chamber can be greatly improved, the cost is reduced, the preparation process is suitable for industrial large-scale production, the low power consumption, the miniaturization and the light weight of the applied equipment can be realized, the technical bottleneck of the low power consumption and the miniaturization of the atomic clock is solved, and the preparation process has great significance for the development of digital communication, aerospace and navigation positioning technologies.
Drawings
FIG. 1 is a schematic view of a milled through-hole according to embodiment 1 of the present invention;
FIG. 2 is a schematic view of the structure of an atomic gas cell cube in example 1 of the present invention;
FIG. 3 is a schematic view of the bonding of an atomic gas cell cube to a glass sheet according to example 1 of the present invention;
FIG. 4 is a schematic structural view of an atomic gas cell cube of example 1 of the present invention after being sealed;
FIG. 5 is a schematic view of an atomic gas cell cube coupled to a filler pipe according to example 1 of the present invention;
FIG. 6 is a schematic view of a milled through-hole according to embodiment 2 of the present invention;
FIG. 7 is a schematic view of the structure of an atomic gas cell cube in example 2 of the present invention;
FIG. 8 is a schematic view of the bonding of atomic gas cell cubes to a glass sheet according to example 2 of the present invention;
FIG. 9 is a schematic structural view of an atomic gas cell cube of example 2 of the present invention after being sealed;
FIG. 10 is a schematic view of an atomic gas cell cube connection filler pipe of example 2 of the present invention.
Parts and numbering in the figures:
1-atomic gas cell cube; 2-a through hole; 3-a glass sheet; 4-a single crystal silicon plate; 5-filling holes; 6-filling pipe.
Detailed Description
The following examples are provided to illustrate the method of preparing an alkali metal atomic gas cell and the atomic gas cell of the present invention, but are not intended to limit the scope of the present invention.
Example 1
A preparation method for manufacturing an alkali metal atom air chamber by adopting a monocrystalline silicon material comprises the following specific preparation steps:
A. opening a hole: as shown in fig. 1, a through hole 2 is milled on a monocrystalline silicon plate 4 of monocrystalline silicon material by adopting a high-speed milling process;
B. cutting: as shown in fig. 2, a single crystal silicon plate 4 is cut along the periphery of the opened through hole 2 to form a square atomic gas chamber cube 1;
C. and (3) arranging a filling hole 5: as shown in fig. 2, a filling hole 5 for filling alkali metal atoms is formed on one end surface of the atomic gas chamber square body 1, which is not provided with the through hole 2, by a high-speed milling process, and the filling hole 5 is communicated with the through hole 2;
D. grinding and polishing: grinding and polishing the surface of the opened atomic gas chamber cube 1 until the surface roughness Ra value is not more than 0.002 μm, and polishing the inner surface of the through hole 2 until the surface roughness Ra value is not more than 0.001 μm;
E. cleaning: carrying out deionized water ultrasonic cleaning on the ground and polished atomic gas chamber cube 1;
F. bonding and sealing: as shown in fig. 3 and 4, a glass sheet 3 with the same size as the end face of the atomic gas chamber square body 1 provided with the through hole 2 is adopted to be anodically bonded with the two end faces of the atomic gas chamber square body 1 provided with the through hole 2, the through hole 2 of the closed atomic gas chamber square body 1 forms an atomic gas chamber, and the glass sheet 3 opposite to the end face forms an optical window;
G. as shown in FIG. 5, the filling pipe 6 is anodically bonded to the filling hole 5, and the preparation of the alkali metal atomic gas chamber is completed.
In the step A, the thickness of the monocrystalline silicon plate 4 is more than 2.1mm, 10 through holes 2 milled in the monocrystalline silicon plate 4 are provided, and the distance between the edges of the adjacent through holes 2 is not less than 1.8 mm.
Preferably, in the step a, the diameter of the through hole 2 is 1.5 mm.
In the step B, the cut atomic gas chamber cube 1 is a cube, the length, width and height of the cube are 2 × 2 × 2mm respectively, a wafer dicing saw is preferably used for cutting, and the through hole 2 is located in the center of the opposite end face of the atomic gas chamber cube 1 after cutting, so that the structure is more compact.
Preferably, in the step D, the inner surface of the through hole 2 is polished by a swen fluid polishing process. High polishing efficiency, good effect and little damage to materials.
Preferably, in the step F, the glass sheet 3 is an alkali-free optical glass sheet 3, and has a thickness of 0.2 mm.
As shown in fig. 2 to 5, the alkali metal atomic gas chamber prepared by the above method includes an atomic gas chamber square body 1 made of a single crystal silicon material, the square atomic gas chamber square body 1 is provided with a through hole 2 formed by high-speed milling, glass sheets 3 serving as optical windows are respectively connected to the end faces of the atomic gas chamber square body 1 provided with the through hole 2 in an anodic bonding manner, the glass sheets 3 enclose the closed through hole 2 to form an atomic gas chamber, a filling hole 5 for filling alkali metal atoms is formed in one end face of the atomic gas chamber square body 1 not provided with the through hole 2 by high-speed milling, and the filling hole 5 is communicated with the through hole 2.
Wherein, the atomic gas chamber cube 1 is provided with one through hole 2. The through hole 2 can be opened at the center position of the relative end surface of the atom air chamber square body 1, and the structure is more compact.
Preferably, the filling hole 5 is positioned in the center of the end face of the atomic gas chamber square body 1, and the central axis of the filling hole is perpendicularly intersected with the central axis of the through hole 2. The filling hole 5 is located in the center of the end face of the atom air chamber square body 1, milling, drilling and mounting of the filling pipe 6 are facilitated, and the atom air chamber is small in overall size and compact in structure.
The atomic gas chamber square body 1 is a cube, the length, the width and the height of the cube are respectively 2 x 2mm, the diameter of the through hole 2 is 1.5 mm, the diameter of the filling hole 5 is 0.8 mm, the filling hole 5 is connected with a filling pipe 6, the filling pipe 6 is a glass tube, and the glass sheet 3 is alkali-free optical glass and has the thickness of 0.2 mm. The cube is beneficial to milling processing, the structure of the atomic air chamber is more compact, and the light weight, the miniaturization and the low energy consumption of the atomic air chamber are realized.
Example 2
A preparation method for manufacturing an alkali metal atom air chamber by adopting a monocrystalline silicon material comprises the following specific preparation steps:
A. opening a hole: as shown in fig. 6, a through hole 2 is milled on a monocrystalline silicon plate 4 of monocrystalline silicon material by adopting a high-speed milling process;
B. cutting: as shown in fig. 7, the single crystal silicon plate 4 is cut along the periphery of the opened through hole 2 to form a square atomic gas chamber cube 1; a second through hole 2 is formed in the atomic gas chamber cube 1 through a high-speed milling process, and the central axes of the two through holes 2 are vertically intersected; two through holes 2 are formed to form two optical window channels;
C. and (3) arranging a filling hole 5: as shown in fig. 7, a filling hole 5 for filling alkali metal atoms is formed on one end surface of the atomic gas chamber square body 1, which is not provided with the through hole 2, by a high-speed milling process, wherein the diameter of the filling hole 5 is 0.8 mm, and the filling hole 5 is communicated with the through hole 2;
D. grinding and polishing: grinding and polishing the surface of the opened atomic gas chamber cube 1 until the surface roughness Ra value is not more than 0.002 μm, and polishing the inner surface of the through hole 2 until the surface roughness Ra value is not more than 0.001 μm;
E. cleaning: carrying out deionized water ultrasonic cleaning on the ground and polished atomic gas chamber cube 1;
F. bonding and sealing: as shown in fig. 8 to 9, a glass sheet 3 with the same size as the end face of the atomic gas chamber cube 1 provided with the through hole 2 is adopted to be anodically bonded with the four end faces of the atomic gas chamber cube 1 provided with the through hole 2, the through hole 2 of the closed atomic gas chamber cube 1 forms an atomic gas chamber, and the glass sheet 3 on the opposite end face forms two optical windows;
G. as shown in FIG. 10, the filling pipe 6 is anodically bonded to the filling hole 5, and the preparation of the alkali metal atom gas chamber is completed.
Wherein, the step A is shown in FIG. 6. The thickness of the monocrystalline silicon plate 4 is more than 2.1mm, 20 through holes 2 milled on the monocrystalline silicon plate 4 are formed, and the distance between the edges of the adjacent through holes 2 is not less than 1.8 mm.
Preferably, in the step B, the cut atomic gas cell cube 1 is a cube, and the length, width and height thereof are 2 × 2 × 2mm, respectively. Preferably, a wafer scribing machine is adopted for cutting, and the through hole 2 is located in the center of the opposite end face of the atomic gas chamber square body 1 after cutting, so that the structure is more compact.
Preferably, in step B, the two through holes 2 have the same diameter and the two central axes intersect perpendicularly; and is positioned at the center of the opposite end surface of the atom air chamber square body 1, and the diameter of each through hole 2 is 1.5 mm.
Preferably, in the step D, the inner surface of the through hole 2 is polished by a swen fluid polishing process. High polishing efficiency, good effect and little damage to materials.
Preferably, in step F, the glass sheet 3 is an alkali-free optical glass sheet 3 with a thickness of 0.2 mm, and the filling pipe 6 is a glass tube.
As shown in fig. 7 to 10, the alkali metal atom gas chamber prepared by the above method includes an atom gas chamber square body 1 made of a single crystal silicon material, the square atom gas chamber square body 1 is provided with a through hole 2 formed by high-speed milling, the end surfaces of the atom gas chamber square body 1 provided with the through hole 2 are respectively connected with alkali-free optical glass sheets 3 serving as optical windows in an anodic bonding manner, the alkali-free optical glass sheets 3 enclose the through hole 2 to form an atom gas chamber, one end surface of the atom gas chamber square body 1 not provided with the through hole 2 is provided with a filling hole 5 for filling alkali metal atoms by high-speed milling, and the filling hole 5 is communicated with the through hole 2.
Wherein, the atom air chamber square body 1 is provided with two through holes 2, and the central axes of the two circular through holes 2 are vertically intersected. The atomic gas chamber cavity formed by the two through holes 2 can form two optical window channels to realize bidirectional laser irradiation, the central axes of the two through holes 2 are intersected vertically, the milling and drilling precision is improved easily, the through holes 2 are positioned in the center positions of the opposite end faces of the atomic gas chamber square body 1, the machined atomic gas chamber is small in overall size and compact in structure, and low-power-consumption operation of equipment can be realized.
The atomic gas chamber square body 1 is a cube, the length, the width and the height of the atomic gas chamber square body are respectively 2 multiplied by 2mm, the diameters of two through holes 2 are both 1.5 mm, the diameter of a filling hole 5 is 0.8 mm, a filling pipe 6 is connected to the filling hole 5, a glass sheet 3 is alkali-free optical glass, the thickness of the glass sheet is 0.2 mm, the filling pipe 6 is a glass pipe, the atomic gas chamber is very compact in structure, and light weight, miniaturization and low energy consumption of the atomic gas chamber are achieved.
In this specification, the invention has been described with reference to specific embodiments thereof, but it will be apparent that various modifications can be made without departing from the scope of the invention. The description is thus to be regarded as illustrative instead of limiting.
Claims (10)
1. A preparation method of an alkali metal atom air chamber is characterized in that the alkali metal atom air chamber is prepared by adopting a monocrystalline silicon material, and the preparation method comprises the following specific steps:
A. opening a hole: milling a through hole on a monocrystalline silicon plate made of monocrystalline silicon material by adopting a high-speed milling process;
B. cutting: cutting the single crystal silicon plate along the periphery of the opened through hole to form a square atomic gas chamber cube;
C. and (3) arranging a filling hole: forming a filling hole for filling alkali metal atoms on one end face, which is not provided with the through hole, of the atomic gas chamber square body through a high-speed milling process, wherein the filling hole is communicated with the through hole;
D. grinding and polishing: grinding and polishing the surfaces of the atomic gas chamber cube and the inner surfaces of the through holes after the holes are formed;
E. cleaning: carrying out deionized water ultrasonic cleaning on the ground and polished atomic gas chamber cube;
F. bonding and sealing: the glass sheet with the size consistent with that of the end face of the atomic gas chamber square body with the through hole is adopted to be in anodic bonding with the end face of the atomic gas chamber square body with the through hole, the through hole of the closed atomic gas chamber square body forms an atomic gas cavity, and the glass sheet on the opposite end face forms an optical window;
G. and connecting a filling pipe to the filling hole to finish the preparation of the alkali metal atom air chamber.
2. The method for preparing an alkali metal atomic gas cell according to claim 1, wherein in the step B, the cut atomic gas cell cube is provided with a second through hole by a high-speed milling process, and central axes of the two through holes are vertically intersected.
3. The method for preparing the alkali metal atom gas chamber according to claim 1, wherein in the step A, the thickness of the monocrystalline silicon plate is more than 2.1mm, more than one through hole is milled on the monocrystalline silicon plate, the diameter of the through hole is 1.5 mm, and the distance between the edges of the adjacent through holes is not less than 1.8 mm.
4. The method as claimed in claim 1, wherein in the step B, the cut square atomic gas cell is a cube with a length, width and height of 2 x 2 mm.
5. The method as claimed in any one of claims 1 to 4, wherein in the step D, the surface of the atomic gas chamber cube is ground and polished to a surface roughness Ra value of not more than 0.002 μm, and the inner surface of the through hole is polished to a surface roughness Ra value of not more than 0.001 μm by a Schmann-fluid polishing process.
6. The method as claimed in claim 5, wherein in step F, the glass sheet is alkali-free optical glass with a thickness of 0.2 mm.
7. The alkali metal atom air chamber is characterized by comprising an atom air chamber square body made of single crystal silicon materials, wherein a through hole formed by high-speed milling is formed in the square atom air chamber square body, glass sheets serving as optical windows are respectively connected to the end faces of the atom air chamber square body provided with the through hole in an anodic bonding mode, the glass sheets enclose the closed through hole to form an atom gas cavity, a filling hole used for filling alkali metal atoms is formed in one end face, not provided with the through hole, of the atom air chamber square body through high-speed milling, and the filling hole is communicated with the through hole.
8. The alkali metal atom gas chamber of claim 7, wherein the through hole of the atom gas chamber cube is one or two circular holes, and when the through hole is two circular holes, the central axes of the two through holes are intersected vertically.
9. An alkali metal atomic gas cell as set forth in claim 8, wherein the filler hole is provided at a central position of an end face of the atomic gas cell cube, and a central axis thereof is perpendicular to a central axis of the through hole.
10. The alkali metal atomic gas chamber according to any one of claims 7 to 9, wherein the atomic gas chamber cube is a cube having a length, a width and a height of 2 × 2 × 2mm, respectively, the diameter of the through hole is 1.5 mm, the diameter of the filling hole is 0.8 mm, the filling hole is connected with a filling pipe, and the glass sheet is alkali-free optical glass and has a thickness of 0.2 mm.
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| CN118936443A (en) * | 2024-07-26 | 2024-11-12 | 深圳大学 | Alkali metal gas chamber based on T-tube or cross tube, preparation and filling method, and angular rate sensor |
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Application publication date: 20220412 |