CN114325315A - Chip aging compensation method and device, SOC chip and electronic equipment - Google Patents

Abstract

The present application relates to a chip aging compensation method, device, SOC chip and electronic equipment, belonging to the technical field of integrated circuits. The method includes using a voltage measurement module to measure a measurement value at the current moment corresponding to a preset reference voltage; obtaining an aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule; based on the aging degree of the voltage measurement module and A preset mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip is used to obtain the aging degree of the critical path; based on the aging degree of the critical path and the preset second rule, the aging compensation corresponding to the aging degree of the critical path is obtained. value; adjust the power supply voltage or operating frequency of the chip according to the aging compensation value for aging compensation. The present application can perform aging detection and measurement at any time as needed, and compensate the power supply voltage or operating frequency of the chip to ensure an optimal energy efficiency ratio.

Description

A chip aging compensation method, device, SOC chip and electronic equipment

technical field

The present application belongs to the technical field of integrated circuits, and in particular relates to a chip aging compensation method, device, SOC chip and electronic equipment.

Background technique

As the size of semiconductor devices (such as MOS (Metal Oxide Semiconductor, metal oxide semiconductor) tubes) is reduced to ultra-deep submicron and nanometer sizes, the impact of semiconductor device aging on large-scale integrated circuit chips has become more and more prominent. Aging will increase the threshold voltage (Vth) and reduce the channel current (Ids), resulting in a decrease in the driving capability of the circuit unit, an increase in the delay, and ultimately a decrease in the operating speed (maximum operating frequency (Fmax)) of the entire chip. In order to make the chip still meet the better energy efficiency ratio with the increase of working time, it is necessary to adopt appropriate methods to adjust the working state of the chip in time according to the aging of the chip, so that the chip has been working in a better state with the increase of working time. state.

At present, in order to keep the chip working in a better state with the increase of working time, a corresponding margin will be added to the power supply voltage of the chip in advance in the early stage of the chip operation to ensure that the chip can work normally without downtime within the corresponding years. However, in the early and mid-term of the chip operation, when the chip has not aged and declined, the increased power supply voltage margin is redundant, which will cause additional power consumption, making the chip unable to achieve the optimal energy efficiency ratio, and also will affect the performance of the entire system.

SUMMARY OF THE INVENTION

In view of this, the purpose of the present application is to provide a chip aging compensation method, device, SOC chip and electronic equipment, so as to improve the existing compensation scheme by adding excess margin to the chip power supply voltage in the early stage, which will cause extra power consumption, so that The chip cannot achieve the optimal energy efficiency ratio, and it will also affect the performance of the entire system.

The embodiments of the present application are implemented as follows:

In a first aspect, an embodiment of the present application provides a chip aging compensation method, including: using a voltage measurement module to measure a measurement value at a current moment corresponding to a preset reference voltage, wherein the voltage measurement module is a ring oscillator-based voltage measurement module; based on the measurement value at the current moment and a preset first rule, obtain the aging degree of the voltage measurement module; based on the aging degree of the voltage measurement module and a preset characterizing the voltage measurement module and the chip Obtain the aging degree of the critical path by mapping the aging correlation of the internal critical path; based on the aging degree of the critical path and the preset second rule, obtain the aging compensation value corresponding to the aging degree of the critical path; The aging compensation value adjusts the power supply voltage or operating frequency of the chip to perform aging compensation. In the embodiment of the present application, aging detection and measurement can be performed at any time as needed, and the aging compensation value corresponding to the aging degree of the critical path can be obtained, and the power supply voltage or operating frequency of the chip can be compensated based on this, so that the power supply voltage of the chip can follow the aging condition. Adjustment does not need to add excess margin to the chip power supply voltage at the initial stage in order to avoid downtime caused by aging, so as to achieve the optimal energy efficiency ratio while improving the deterioration of chip performance caused by aging.

With reference to a possible implementation manner of the embodiment of the first aspect, the preset first rule includes a first characteristic equation representing the relationship between the power supply voltage, the measured value and the temperature of the voltage measurement module under different aging times, the The method further includes: acquiring the ambient temperature at the current moment; correspondingly, based on the measurement value at the current moment and a preset first rule, obtaining the aging degree of the voltage measurement module, comprising: determining, based on the first characteristic equation, The initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature; obtain the measurement value change at the current moment and the measurement value change at the initial moment; if the measurement value variation Exceeding the preset threshold, obtain the voltage value corresponding to the specified target measurement value under the ambient temperature based on the first characteristic equation, and obtain the voltage change amount between the voltage value corresponding to the specified target measurement value and the initial voltage value at the initial moment , the voltage variation represents the aging degree of the voltage measurement module. In the embodiment of the present application, when considering the aging degree of the voltage measurement module, the temperature influence is also taken into account, which further improves the accuracy. At the same time, the initial measurement value corresponding to the preset reference voltage at the initial moment under the same ambient temperature is calculated. , and quickly determine whether the voltage measurement module is aging according to the change of the measurement value between the initial measurement value and the measurement value at the current moment, and when aging occurs, calculate the voltage value corresponding to the target measurement value and the voltage value of the initial voltage value at the initial moment. The amount of change to characterize the aging degree of the voltage measurement module.

With reference to a possible implementation manner of the embodiment of the first aspect, the preset first rule includes a first characteristic equation representing the relationship between the power supply voltage, the measured value and the temperature of the voltage measurement module under different aging times, the The method further includes: acquiring the ambient temperature at the current moment; correspondingly, based on the measurement value at the current moment and a preset first rule, obtaining the aging degree of the voltage measurement module, comprising: determining, based on the first characteristic equation, The initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature; the measurement value change amount between the measurement value at the current moment and the initial measurement value at the initial moment is obtained; the measurement value variation amount represents The voltage measures the aging degree of the module. In the embodiment of the present application, when determining the initial measurement value corresponding to the preset reference voltage at the initial moment, the influence of temperature is also taken into account, and the measurement value at the current moment and the initial measurement value at the initial moment under the same ambient temperature are determined by measuring The value change is used to characterize the aging degree of the voltage measurement module, which improves its accuracy.

With reference to a possible implementation manner of the embodiment of the first aspect, if the aging degree of the critical path is characterized by the variation of the power supply voltage corresponding to the target operating frequency of the chip, the preset second rule includes characterizing the critical path. a second characteristic equation of the relationship between the power supply voltage, operating frequency and temperature of the path under different aging times; the method further includes: acquiring the ambient temperature at the current moment; accordingly, based on the aging degree of the critical path and the preset second characteristic equation obtaining the aging compensation value corresponding to the aging degree of the critical path, including: determining the power supply voltage corresponding to the target operating frequency at the initial moment under the ambient temperature based on the second characteristic equation; based on the power supply voltage variation and The power supply voltage corresponding to the target operating frequency is obtained, and the power supply voltage corresponding to the target operating frequency at the current moment is obtained, and the power supply voltage corresponding to the target operating frequency at the current moment is the aging compensation value. In this embodiment of the present application, the power supply voltage variation of the chip can be used to characterize the aging degree of the critical path. When calculating the power supply voltage variation, the influence of temperature on the aging degree is also taken into account, which improves the accuracy of the calculation.

With reference to a possible implementation manner of the embodiment of the first aspect, if the aging degree of the critical path is characterized by the variation of the operating frequency corresponding to the target power supply voltage of the chip, the preset second rule includes characterizing the critical path. a second characteristic equation of the relationship between the power supply voltage, operating frequency and temperature of the path under different aging times; the method further includes: acquiring the ambient temperature at the current moment; accordingly, based on the aging degree of the critical path and the preset second characteristic equation obtaining the aging compensation value corresponding to the aging degree of the critical path, including: determining the operating frequency corresponding to the target power supply voltage at the initial moment under the ambient temperature based on the second characteristic equation; based on the operating frequency variation and From the operating frequency corresponding to the target power supply voltage, the operating frequency corresponding to the target power supply voltage at the current moment is obtained, and the operating frequency corresponding to the target power supply voltage at the current moment is the aging compensation value. In the embodiment of the present application, the aging degree of the critical path can be characterized according to the variation of the operating frequency of the chip. When calculating the variation of the operating frequency of the chip, the influence of temperature on the aging degree is also taken into account, which improves the accuracy of the calculation , so that the calculated aging compensation value is more accurate.

With reference to a possible implementation manner of the embodiment of the first aspect, adjusting the power supply voltage or operating frequency of the chip according to the aging compensation value to perform aging compensation, including: if the aging compensation value corresponding to the aging degree of the critical path For the operating frequency corresponding to the target power supply voltage at the current moment, adjust the operating frequency of the chip to be consistent with the operating frequency corresponding to the target power supply voltage at the current moment to perform aging compensation; if the aging compensation value corresponding to the aging degree of the critical path For the power supply voltage corresponding to the target operating frequency at the current time, the power supply voltage of the chip is adjusted so that the value of the power supply voltage is consistent with the power supply voltage corresponding to the target operating frequency at the current time, so as to perform aging compensation. In the embodiment of the present application, when the aging compensation value corresponding to the aging degree of the critical path is the power supply voltage corresponding to the target operating frequency at the current moment, the power supply voltage of the chip can be adjusted to perform aging compensation. When the aging compensation value corresponding to the aging degree of the critical path is For the operating frequency corresponding to the target power supply voltage at the current moment, the operating frequency of the chip can be adjusted to perform aging compensation, and the compensation method is flexible.

With reference to a possible implementation manner of the embodiment of the first aspect, the method further includes: acquiring measurement values of the voltage measurement module under different power supply voltages and different temperature conditions, and performing fitting to obtain the power supply voltage at the initial moment, The expression of the relationship between the measured value and the temperature; obtain the corresponding measured values of the voltage measurement module under different power supply voltages and different temperature conditions after processing with different aging times, and perform fitting to obtain the power supply voltage and measured values under different aging times. and temperature relationship to obtain a first characteristic equation representing the relationship between the power supply voltage, measured value and temperature of the voltage measurement module at different aging times, wherein the first characteristic equation includes the power supply voltage at the initial moment, Expressions for the relationship between measured value and temperature and the relationship between supply voltage, measured value and temperature for different aging times. In the embodiment of the present application, by measuring the corresponding measurement values of the voltage measurement module at different times (non-aging and different aging times), different power supply voltages, and different temperature conditions, and then fitting, it is possible to obtain the characteristic voltage measurement module at different times. The first characteristic equation of the relationship between the power supply voltage, the measured value and the temperature under the aging time, so that the aging degree of the voltage measurement module can be quickly determined according to the equation later.

With reference to a possible implementation of the embodiment of the first aspect, the method further includes: acquiring frequency values of the critical path module under different power supply voltage and temperature conditions, and performing fitting to obtain the power supply voltage and frequency values at the initial moment and temperature relationship, wherein, the critical path module is a ring oscillator composed of logic gate devices in the critical path; obtain the critical path module after different aging time processing at different power supply voltages, different temperatures The frequency value under the condition, and fit to obtain the expression of the relationship between the power supply voltage, frequency value and temperature under different aging times, and obtain the second expression that characterizes the relationship between the power supply voltage, operating frequency and temperature of the critical path under different aging times. A characteristic equation, the second characteristic equation includes an expression of the relationship between power supply voltage, frequency value and temperature at an initial moment, and an expression of the relationship between power supply voltage, frequency value and temperature under different aging times. In the embodiment of the present application, by measuring the corresponding frequency values of the critical path module at different times (unaged and with different aging times), different power supply voltages, and different temperature conditions, and then fitting, it can be obtained to characterize the critical path under different aging conditions. The second characteristic equation of the relationship between the power supply voltage, the operating frequency and the temperature under time is used to quickly determine the aging compensation amount corresponding to the aging degree of the critical path according to the equation.

In a second aspect, an embodiment of the present application further provides a chip aging compensation device, including: an acquisition module, an aging detection module, and a compensation module; and an acquisition module for acquiring the current moment corresponding to the preset reference voltage measured by the voltage measurement module , wherein the voltage measurement module is a voltage measurement module based on a ring oscillator; an aging detection module is used to obtain the aging of the voltage measurement module based on the measurement value at the current moment and a preset first rule degree, and based on the aging degree of the voltage measurement module and a preset mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip, the aging degree of the critical path is obtained, and based on the critical path According to the aging degree and the preset second rule, the aging compensation value corresponding to the aging degree of the critical path is obtained; the compensation module is used to adjust the power supply voltage or operating frequency of the chip according to the aging compensation value to perform aging compensation.

In a third aspect, an embodiment of the present application further provides an SOC chip, including: a voltage measurement module, a chip aging compensation device; and a voltage measurement module, connected to a preset reference voltage, for measuring a voltage corresponding to the preset reference voltage The measured value at the current moment, wherein the voltage measurement module measures a voltage measurement module based on a ring oscillator; a chip aging compensation device is connected to the voltage measurement module, and the chip aging compensation device is used to obtain the current The measured value at the moment, based on the measured value at the current moment and the preset first rule, the aging degree of the voltage measurement module is obtained, and the voltage measurement module is characterized based on the aging degree of the voltage measurement module and a preset The mapping relationship with the aging correlation of the critical path inside the chip, the aging degree of the critical path is obtained, and the aging compensation value corresponding to the aging degree of the critical path is obtained based on the aging degree of the critical path and the preset second rule , and adjust the power supply voltage or operating frequency of the chip according to the aging compensation value to perform aging compensation.

In a fourth aspect, an embodiment of the present application further provides an electronic device, the electronic device includes a body and a chip provided in the foregoing first aspect embodiment and/or in combination with any possible implementation manner of the first aspect embodiment The aging compensation device, or the SOC chip provided by the embodiment of the second aspect above.

In a fifth aspect, an embodiment of the present application further provides an electronic device, including: a memory and a processor, where the processor is connected to the memory; the memory is used to store a program; the processor is used to call The program stored in the memory is used to execute the above-mentioned embodiment of the first aspect and/or the method provided in combination with any possible implementation manner of the embodiment of the first aspect.

In a sixth aspect, an embodiment of the present application further provides a computer-readable storage medium on which a computer program is stored, and when the computer program is run by a processor, executes the foregoing first aspect embodiment and/or combines the first aspect A method provided by any possible implementation of an example.

Other features and advantages of the present application will be set forth in the description which follows, and, in part, will be apparent from the description, or may be learned by practice of the embodiments of the present application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.

Description of drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the accompanying drawings required in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some of the present application. In the embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort. The above and other objects, features and advantages of the present application will be more apparent from the accompanying drawings. The same reference numerals refer to the same parts throughout the drawings. The drawings are not intentionally scaled to actual size, and the emphasis is on illustrating the subject matter of the present application.

FIG. 1 shows a schematic flowchart of a chip aging compensation method provided by an embodiment of the present application.

FIG. 2 shows a schematic schematic diagram of calculating a mapping relationship representing the aging correlation between a voltage measurement module and a critical path inside a chip provided by an embodiment of the present application.

FIG. 3 shows a schematic flowchart of still another chip aging compensation method provided by an embodiment of the present application.

FIG. 4 shows a block diagram of a chip aging compensation module provided by an embodiment of the present application.

FIG. 5 shows a schematic structural diagram of an electronic device provided by an embodiment of the present application.

Detailed ways

The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application.

It should be noted that similar numerals and letters identify similar items in the following figures, so once an item is defined in one figure, it does not require further definition and explanation in subsequent figures. Meanwhile, in the description of this application, relational terms such as "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply these entities or that there is any such actual relationship or sequence between operations. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass a non-exclusive inclusion such that a process, method, article or device that includes a list of elements includes not only those elements, but also includes not explicitly listed or other elements inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in a process, method, article or apparatus that includes the element.

Furthermore, the term "and/or" in this application is only an association relationship to describe related objects, indicating that there can be three kinds of relationships, for example, A and/or B, it can mean that A exists alone, and A and B exist at the same time. B, there are three cases of B alone.

In view of the defects of the current chip aging compensation scheme, the embodiments of the present application provide a chip aging compensation method. The scheme of performing aging detection and measurement and compensating the power supply voltage or operating frequency of the chip, so that the power supply voltage of the chip can be adjusted according to the aging situation, and there is no need to add excess margin to the power supply voltage of the chip in the early stage to avoid downtime caused by aging.

For ease of understanding, the chip aging compensation method provided by the embodiment of the present application will be described below with reference to FIG. 1 .

S1: Use the voltage measurement module to measure the measurement value at the current moment corresponding to the preset reference voltage.

When the aging measurement conditions are met, use the voltage measurement module to measure the voltage of the preset reference voltage (which can be the chip power supply voltage, or other external power supply voltage, which is a known value), and obtain the current measurement value (represented by Count). ). The voltage measurement module is a voltage measurement module based on a ring oscillator. Among them, the ring oscillator is a ring oscillator formed by connecting the output terminals and the input terminals of a plurality of logic gate circuits end to end, which will age with the increase of working time.

Among them, the aging measurement condition can be the time when the chip is powered on, or the aging detection can be performed periodically, or the aging degree detection can be performed when the aging measurement condition is satisfied when the system is idle or when the detection is required, and can be flexibly configured as needed.

S2: Obtain the aging degree of the voltage measurement module based on the measured value at the current moment and the preset first rule.

After the measurement value at the current moment is acquired, the aging degree of the voltage measurement module can be obtained based on the measurement value at the current moment and the preset first rule. Among them, the aging degree of the voltage measurement module can be expressed by means of difference, ratio, error percentage, etc., and the way of expressing the aging degree can be selected according to needs.

Among them, the measurement values of the voltage measurement module when measuring the same power supply voltage are different when it is not aged and when it is aged, so the variation of the measurement value corresponding to the same power supply voltage can be used to characterize the aging degree of the voltage measurement module. Similarly, the voltage measurement module has different power supply voltages corresponding to the same measurement value when it is not aged and aged, so the variation of the power supply voltage corresponding to the same measurement value can be used to characterize the aging degree of the voltage measurement module.

In the first embodiment, if the aging degree of the voltage measurement module is characterized by the variation (as an absolute value) of the power supply voltage corresponding to the specified target measurement value, the preset first rule may include characterizing the voltage measurement module at different aging times The first characteristic equation for the relationship between the measured value and the supply voltage under. Optionally, the first characteristic equation may be:

Voltage_T0=func(Count),

Voltage_T1=func(Count),

...

Voltage_Tn=func(Count). Among them, Count is the measured value, T0 is the initial time, the voltage measurement module is not aging at this time, T1~Tn are the different aging times of the voltage measurement module, Voltage_T0 is the power supply voltage at time T0, that is, the initial time (not aging), Voltage_T1 is The power supply voltage at time T1, and so on, Voltage_Tn is the power supply voltage at time Tn.

At this time, the implementation process of S2 may be: judging whether the voltage measurement module is aging based on the measurement value at the current moment, and when determining that the voltage measurement module is aging, obtaining the specified target measurement value based on the first characteristic equation (which can be specified or specified as required or Set) the corresponding voltage value, and obtain the voltage variation between the voltage value corresponding to the specified target measurement value and the initial voltage value corresponding to the specified target measurement value at the initial moment, and the voltage variation represents the aging degree of the voltage measurement module. Since the voltage measurement module is not aged at time T0, if the measurement value at the current moment is not equal to the initial measurement value at time T0 or the difference is greater than the preset threshold, it indicates that the voltage measurement module is aged. Then, the voltage value corresponding to the specified target measurement value can be obtained based on the first characteristic equation, and the voltage variation between the voltage value corresponding to the specified target measurement value and the initial voltage value at the initial moment can be obtained to characterize the aging degree of the voltage measurement module.

When obtaining the voltage value corresponding to the specified target measurement value based on the first characteristic equation, the preset reference voltage may be substituted into the expressions of the first characteristic equation Voltage_T1~Voltage_Tn, respectively, to obtain the corresponding measurement value, and then respectively correspond to the current moment. Compared with the measured value of , select the equation with the smallest degree of difference to calculate the voltage value corresponding to the specified target measured value. Assuming that the measured value calculated by Voltage_T2 has the smallest degree of difference compared with the measured value at the current moment, the expression of Voltage_T2 is used. to calculate the voltage value corresponding to the specified target measurement value.

Of course, Count and Voltage in the expression of the first characteristic equation can also be reversed. In this case, the first characteristic equation can be:

Count_T0=func(Voltage),

Count_T1=func(Voltage),

...

Count_Tn=func(Voltage). Among them, Count is the measured value, T0 is the initial time, the voltage measurement module is not aging at this time, T1~Tn are the different aging times of the voltage measurement module, Count_T0 is the measured value at time T0, that is, the initial time (not aging), Count_T1 is The measured value at time T1, and so on, Count_Tn is the measured value at time Tn.

At this time, when the voltage value corresponding to the specified target measurement value is obtained based on the first characteristic equation, the principle is similar to the above, and it is also necessary to substitute the preset reference voltages into the expressions of the first characteristic equations Count_T1 to Count_Tn respectively, and calculate the corresponding measurement value, and then compared with the measured value at the current moment, select the equation with the smallest difference to calculate the voltage value corresponding to the specified target measured value.

In this embodiment, the chip aging compensation method further includes acquiring the above-mentioned first characteristic equation representing the relationship between the measurement value of the voltage measurement module under different aging times and the power supply voltage. Wherein, the process of obtaining the first characteristic equation representing the relationship between the measurement value of the voltage measurement module under different aging times and the power supply voltage may be: obtaining the measurement value of the voltage measurement module (time T0) under different power supply voltages, and performing simulation Combined to obtain the expression of the relationship between the power supply voltage and the measured value at the initial moment, that is, the above Voltage_T0=func(Count) or Count_T0=func(Voltage). The measured value under the power supply voltage, and fitting it to obtain the expression of the relationship between the power supply voltage and the measured value under different aging times, that is, the above Voltage_T1=func(Count)～Voltage_Tn=func(Count), or Count_T1=func(Voltage) ~Count_Tn=func(Voltage), thereby obtaining the first characteristic equation representing the relationship between the measured value of the voltage measurement module and the power supply voltage under different aging times.

Among them, the fitting method may adopt linear interpolation fitting, or curve fitting, such as polynomial fitting, exponential fitting, etc., and the specific principles of these fitting methods are well known to those skilled in the art, and will not be discussed here. Introduce again.

In the second embodiment, if the aging degree of the voltage measurement module is represented by the variation of the measurement value corresponding to the specified power supply voltage (such as the preset reference voltage), the preset first rule may include the corresponding value of the preset reference voltage at the initial moment. Measurements. At this time, the implementation process of S2 may be: acquiring the measured value variation of the measured value corresponding to the preset reference voltage at the current moment and the initial measured value corresponding to the preset reference voltage at the time T0 (initial moment). Since the voltage measurement module is not aged at time T0, if the measurement value at the current moment is equal to the initial measurement value at the moment T0, it means that the voltage measurement module is not aged. If the measurement value at the current moment is not equal to the initial measurement value at the moment T0, It indicates that the voltage measurement module is aging, and the change in the measurement value between the measurement value at the current moment and the initial measurement value at the moment T0 is the aging degree of the voltage measurement module.

In addition, if the aging degree of the voltage measurement module is represented by the variation of the measurement value corresponding to the specified power supply voltage (such as the preset reference voltage), the preset first rule may also include the above-mentioned first characteristic equation. The implementation process can be: based on the expression Voltage_T0=func(Count) or Count_T0=func(Voltage) at time T0, substitute the preset reference voltage into its expression to obtain the measurement value at the initial time, and then obtain the preset reference voltage at the current time The corresponding measured value is the measured value change from the initial measured value at time T0.

In addition, considering that the ambient temperature will also affect the aging of the chip, the ambient temperature can also be taken into account when calculating the aging degree of the critical path. In the third embodiment, the preset first rule includes a first characteristic equation representing the relationship between the power supply voltage, the measured value and the temperature of the voltage measurement module under different aging times. Optionally, the first characteristic equation may be:

Voltage_T0=func(Count, Temp),

Voltage_T1=func(Count, Temp),

...

Voltage_Tn=func(Count, Temp), where Temp is temperature.

At this time, the chip aging compensation method further includes: acquiring the ambient temperature at the current moment. A temperature sensor can be used to obtain the ambient temperature of the environment where the chip is located or the junction temperature inside the chip.

If the aging degree of the voltage measurement module is represented by the variation of the power supply voltage corresponding to the specified target measurement value, correspondingly, the implementation process of S2 may be: based on the first characteristic equation, determine the preset reference voltage at the initial moment under the same ambient temperature (known value) corresponding initial measurement value; obtain the measurement value corresponding to the preset reference voltage at the current moment and the measurement value variation of the initial measurement value at the initial moment; if the measurement value variation exceeds the preset threshold, based on the first characteristic The equation obtains the voltage value corresponding to the specified target measurement value at the ambient temperature, and obtains the voltage change between the voltage value corresponding to the specified target measurement value and the initial voltage value corresponding to the specified target measurement value at the initial moment, and the voltage variation represents the voltage measurement module. degree of aging. Substitute the ambient temperature and preset reference voltage at the current moment into the expression Voltage_T0=func(Count, Temp) to obtain the measurement value at the initial moment, and then compare the measurement value at the current moment with the measurement value at the initial moment. If the difference exceeds the preset threshold, the voltage value corresponding to the specified target measurement value under the same ambient temperature is obtained based on the first characteristic equation, and the voltage change between the voltage value corresponding to the specified target measurement value and the initial voltage value at the initial moment is obtained, the voltage The variation characterizes the age of the voltage measurement module.

The process of obtaining the voltage value corresponding to the specified target measurement value based on the first characteristic equation under the same ambient temperature is similar to the above-mentioned process of obtaining the voltage value corresponding to the specified target measurement value based on the first characteristic equation, except that the current moment is more considered Also, the preset reference voltage and the ambient temperature at the current moment are respectively substituted into the expressions of the first characteristic equation Voltage_T1~Voltage_Tn, the corresponding measured values are calculated, and then compared with the measured values at the current moment, the difference degree is selected. The smallest equation is used to calculate the voltage value corresponding to the specified target measurement value. Assuming that the difference between the measurement value calculated by Voltage_T2 and the measurement value at the current moment is the smallest, the expression of Voltage_T2 is used to calculate the voltage corresponding to the specified target measurement value. value.

Of course, Count and Voltage in the expression of the first characteristic equation can also be reversed. In this case, the first characteristic equation can be:

Count_T0=func(Voltage,Temp),

Count_T1=func(Voltage,Temp),

...

Count_Tn=func(Voltage, Temp).

If the aging degree of the voltage measurement module is represented by the variation of the measurement value corresponding to the specified power supply voltage (such as the preset reference voltage), at this time, the implementation process of S2 may be: based on the first characteristic equation, determine the initial The initial measurement value corresponding to the preset reference voltage (known value) at the moment is obtained, and the measurement value change amount between the measurement value corresponding to the preset reference voltage at the current moment and the initial measurement value at the initial moment is obtained. Since the voltage measurement module is not aged at the time T0, if the measured value at the current moment under the same ambient temperature is equal to the initial measurement value at the moment T0, it means that the voltage measurement module is not aged. If the initial measurement values at the time are not equal, it indicates that the voltage measurement module is aging, and the change in the measurement value between the measurement value at the current moment and the initial measurement value at time T0 under the same ambient temperature is the aging degree of the voltage measurement module.

In the case of considering the ambient temperature, the chip aging compensation method further includes: obtaining the above-mentioned first characteristic equation representing the relationship between the power supply voltage, the measured value and the temperature of the voltage measurement module under different aging times, wherein, obtaining the above-mentioned characteristic voltage The process of measuring the first characteristic equation of the relationship between the power supply voltage, the measured value and the temperature of the module under different aging times may be: acquiring the measured values of the voltage measuring module (at the time T0) under different power supply voltage and different temperature conditions, and performing the process. Fit the expression of the relationship between power supply voltage, measured value and temperature at the initial moment, that is, the above Voltage_T0=func(Count, Temp) or Count_T0=func(Voltage, Temp); obtain different aging times (T1～Tn) The processed voltage measurement module corresponds to the measured values under different power supply voltage and different temperature conditions, and is fitted to obtain the expression of the relationship between the power supply voltage, measured value and temperature under different aging times, that is, the above Voltage_T1=func(Count , Temp)~Voltage_Tn=func(Count,Temp), or Count_T1=func(Voltage,Temp)~Count_Tn=func(Voltage,Temp), so as to obtain the power supply voltage, measured value and The first characteristic equation for the temperature relationship.

The fitting method may use linear interpolation fitting or curve fitting, such as polynomial fitting, exponential fitting, and the like.

S3: Obtain the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip.

After the aging degree of the voltage measurement module is obtained, the aging degree of the critical path corresponding to the aging degree of the voltage measurement module can be obtained in combination with the preset mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip.

Wherein, based on the above, it can be known that the aging degree of the voltage measurement module can be characterized by the variation of the measurement value corresponding to the specified power supply voltage, or it can be characterized by the variation of the voltage corresponding to the target measurement value. The aging degree of the critical path can be characterized by the variation of the power supply voltage of the chip under the target frequency condition, or by the variation of the operating frequency of the chip under the condition of the target power supply voltage. Then the mapping relationship may be the mapping relationship between the above-mentioned voltage variation or measured value variation and the power supply voltage variation or operating frequency variation of the chip.

The aging of the critical path will reduce the operating frequency of the chip under the same power supply voltage condition and increase the required power supply voltage under the same target frequency condition. Therefore, the aging degree of the critical path can be characterized based on the power supply voltage variation corresponding to the target frequency before and after aging or the operating frequency variation corresponding to the target power voltage.

Wherein, the power supply voltage variation, the measured value variation, the voltage variation, and the operating frequency variation in this application are all expressed as positive values by absolute values.

It should be noted that the number of critical paths in the chip can be one or more. If there are more than one, the corresponding aging correlation mapping relationship is also multiple. The corresponding aging degree is calculated based on the mapping relationship of the critical path.

S4: Based on the aging degree of the critical path and the preset second rule, obtain an aging compensation value corresponding to the aging degree of the critical path.

After obtaining the aging degree of the critical path, the aging compensation value corresponding to the aging degree of the critical path can be obtained by combining with the preset second rule. Among them, the aging degree of the critical path has a correlation with the aging compensation value. For example, if the aging degree of the critical path is represented by the change in the power supply voltage corresponding to the target frequency of the chip, the aging compensation value is the power supply voltage corresponding to the target frequency at the current moment, and the greater the aging degree, the greater the aging compensation value; The aging degree is characterized by the variation of the operating frequency corresponding to the target power supply voltage of the chip, and the aging compensation value is the operating frequency corresponding to the target power supply voltage of the chip at the current moment. The greater the aging degree, the smaller the corresponding aging compensation value.

If the aging degree of the critical path is characterized by the variation of the operating frequency corresponding to the target power supply voltage of the chip, in one embodiment, without considering the influence of temperature on the aging of the critical path, the implementation process of S4 may be: based on the operating frequency The change amount and the operating frequency corresponding to the target power supply voltage at the initial time are obtained to obtain the operating frequency corresponding to the target power supply voltage at the current time, that is, the operating frequency corresponding to the target power supply voltage at the current time=initial operating frequency-operating frequency variation. At this time, the preset second rule may include the initial working frequency at the initial moment.

In addition, without considering the influence of temperature on the aging of the critical path, the preset second rule may further include characterizing the relationship between the power supply voltage (represented by Vdd) and the operating frequency (represented by Freq) of the critical path under different aging times The second characteristic equation of , optionally, the second characteristic equation can be:

Vdd_T0=func(Freq),

Vdd_T1=func(Freq),

...

Vdd_Tn=func(Freq), where T0 is the initial time, when the critical path is not aging, T1~Tn are the different aging times of the critical path, Vdd_T0 is the power supply voltage at the time T0, that is, the initial time (not aging), and Vdd_T1 is The power supply voltage at time T1, and so on, Vdd_Tn is the power supply voltage at time Tn.

Of course, Vdd and Freq in the expression of the above second characteristic equation can also be reversed. At this time, the second characteristic equation can be:

Freq_T0=func(Vdd),

Freq_T1=func(Vdd),

...

Freq_Tn=func(Vdd).

At this time, the implementation process of S4 may be: substitute the chip target power supply voltage at time T0 into Vdd_T0=func(Freq) or Freq_T0=func(Vdd) to obtain the chip operating frequency at time T0, and then based on the operating frequency corresponding to the target power supply voltage The amount of change and the initial operating frequency at the initial moment are used to obtain the operating frequency corresponding to the target power supply voltage at the current moment.

If the aging degree of the critical path is characterized by the variation of the power supply voltage corresponding to the target operating frequency of the chip, then in one embodiment, without considering the influence of temperature on the aging of the critical path, the implementation process of S4 may be: based on the target The power supply voltage change corresponding to the working frequency and the power supply voltage at the initial time, to obtain the power supply voltage corresponding to the target working frequency at the current time, that is, the power supply voltage corresponding to the target working frequency at the current time = power supply voltage at the initial time + power supply voltage change amount . At this time, the preset second rule may include the chip power supply voltage corresponding to the target operating frequency at the initial moment.

In addition, the preset second rule may further include a second characteristic equation representing the relationship between the power supply voltage (represented by Vdd) and the operating frequency (represented by Freq) of the critical path under different aging times. At this time, the implementation process of S4 may be: Substitute the target operating frequency of the chip at time T0 into Vdd_T0=func(Freq) or Freq_T0=func(Vdd) to obtain the power supply voltage at time T0, and then based on the change of the power supply voltage corresponding to the target operating frequency and the power supply voltage at the initial moment to obtain the power supply voltage corresponding to the target operating frequency at the current moment.

In this embodiment, the chip aging compensation method further includes acquiring the above-mentioned second characteristic equation representing the relationship between the power supply voltage and the operating frequency of the critical path under different aging times, wherein, acquiring the above-mentioned characteristic equation representing the critical path under different aging times The process of the second characteristic equation of the relationship between the power supply voltage and the operating frequency can be: obtaining the frequency values of the critical path module at different power supply voltages at time T0, and fitting to obtain the expression of the relationship between the power supply voltage and the frequency value at the initial time, and also That is, Vdd_T0=func(Freq) or Freq_T0=func(Vdd) is obtained. Obtain the frequency values of the critical path module after different aging times (T1~Tn) under different power supply voltages and different temperature conditions, and perform fitting to obtain the expression of the relationship between the power supply voltage and the frequency value under different aging times, that is, Obtain Vdd_T1=func(Freq)～Vdd_Tn=func(Freq) or Freq_T1=func(Vdd)～Freq_Tn=func(Vdd), so as to obtain the second characteristic that characterizes the relationship between the power supply voltage and the operating frequency of the critical path under different aging times equation.

Among them, the fitting method may adopt linear interpolation fitting, or curve fitting, such as polynomial fitting, exponential fitting, etc., and the specific principles of these fitting methods are well known to those skilled in the art, and will not be discussed here. Introduce again.

Among them, it should be noted that, in order to test the aging degree of the critical path, a ring oscillator composed of logic gate devices in the critical path of the chip can be used to implement the test. The critical path module is a ring oscillator composed of logic gate devices in the critical path of the chip, and has the same logic devices and the same connection mode as the critical path part. The critical path is simulated through the critical path module, the critical path characteristics in the core circuit are reflected by monitoring the operating characteristics of the critical path module, and the ring oscillator (critical path module) is measured under set operating conditions (such as voltage, temperature, etc.). The output frequency is used to characterize and measure the delay characteristics of the critical path and the highest operating frequency that the chip can achieve under this operating condition.

Since there can be multiple critical paths of a chip, there can also be multiple corresponding critical path modules, and one critical path corresponds to one critical path module. During testing, a ring oscillator composed of logic gate devices in all critical paths in the chip will be tested, and correspondingly, there may be multiple second characteristic equations above. Finally, the corresponding relationship between the operating frequency of the chip and the power supply voltage is obtained. In application, the corresponding operating voltage is set according to the target operating frequency, or the corresponding operating frequency is set according to the target power supply voltage.

In addition, considering that the ambient temperature will also have a certain impact on the aging of the chip, the ambient temperature can also be taken into account when calculating the aging degree of the critical path. In yet another embodiment, the preset second rule includes a second characteristic equation representing the relationship between the power supply voltage (represented by Vdd), the operating frequency (represented by Freq) and the temperature (represented by Temp) of the critical path under different aging times. . Optionally, the second characteristic equation may be:

Vdd_T0=func(Freq,Temp),

Vdd_T1=func(Freq,Temp),

...

VddTn=func(Freq, Temp), where Temp is the temperature.

Similarly, Freq and Vdd in the second characteristic equation can also be reversed. At this time, the second characteristic equation is:

Freq_T0=func(Vdd,Temp),

Freq_T1=func(Vdd, Temp),

...

Freq_Tn=func(Vdd, Temp).

In this embodiment, the chip aging compensation method further includes acquiring the ambient temperature at the current moment.

If the aging degree of the critical path is represented by the change in the power supply voltage corresponding to the target operating frequency of the chip, correspondingly, the implementation process of S4 may be: determining the target operating frequency at the initial moment at the ambient temperature based on the second characteristic equation (such as the chip at the initial moment). The power supply voltage corresponding to the operating frequency), based on the power supply voltage variation corresponding to the target operating frequency and the power supply voltage at the initial moment, the power supply voltage corresponding to the target operating frequency at the current moment is obtained, and the power supply voltage corresponding to the target operating frequency at the current moment is the aging compensation. value. Substitute the target operating frequency into the above Vdd_T0=func(Freq, Temp) or Freq_T0=func(Vdd, Temp) to obtain the power supply voltage at the initial moment, and then obtain the target operating frequency at the current moment based on the change in the power supply voltage corresponding to the target operating frequency the corresponding supply voltage. Wherein, the power supply voltage corresponding to the target operating frequency at the current moment = the power supply voltage at the initial moment + the variation of the power supply voltage.

If the aging degree of the critical path is represented by the variation of the operating frequency corresponding to the target power supply voltage of the chip, correspondingly, the implementation process of S4 may be: determining the operating frequency corresponding to the target power supply voltage at the initial moment under the ambient temperature based on the second characteristic equation, and based on the second characteristic equation The working frequency change corresponding to the target power supply voltage and the working frequency at the initial moment of the power supply voltage are obtained to obtain the working frequency corresponding to the target power supply voltage at the current moment, and the working frequency at the current moment is the aging compensation value. That is, the target power supply voltage at the initial time is substituted into the above Vdd_T0=func(Freq, Temp) or Freq_T0=func(Vdd, Temp) to obtain the operating frequency at the initial time, and then based on the change in the operating frequency corresponding to the target power supply voltage, the current The operating frequency corresponding to the target power supply voltage at the moment. Wherein, the working frequency corresponding to the target power supply voltage at the current moment = the working frequency at the initial moment - the variation of the working frequency.

It should be noted that, in this application, the power supply voltage variation, the measured value variation, the voltage variation, and the operating frequency variation are all expressed as positive values by absolute values.

In the case of considering the ambient temperature, the chip aging compensation method further includes: obtaining the above-mentioned second characteristic equation representing the relationship between the power supply voltage, the operating frequency and the temperature of the critical path under different aging times, wherein, obtaining the above-mentioned characterizing the critical path in different aging times. The process of the second characteristic equation of the relationship between the power supply voltage, operating frequency and temperature under the aging time may be: obtaining the frequency values of the critical path module under different power supply voltage and temperature conditions, and fitting to obtain the power supply voltage at the initial moment, The expression of the relationship between the frequency value and the temperature, namely Vdd_T0=func(Freq, Temp) or Freq_T0=func(Vdd, Temp). Obtain the frequency values of the critical path module under different power supply voltages and different temperature conditions after processing with different aging times, and perform fitting to obtain the expression of the relationship between the power supply voltage, frequency value and temperature under different aging times, that is, obtain Vdd_T1=func(Freq, Temp)~Vdd_Tn=func(Freq,Temp) or Freq_T1=func(Vdd,Temp)~Freq_Tn=func(Vdd,Temp), so as to obtain the power supply voltage, The second characteristic equation for the relationship between operating frequency and temperature.

Among them, the fitting method can adopt linear interpolation fitting, and can also adopt curve fitting, such as polynomial fitting, exponential fitting, and the specific principles of these fitting methods are well known to those skilled in the art, and will not be repeated here. Introduction etc.

The above-mentioned mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip can be obtained based on the above-mentioned first characteristic equation and the second characteristic equation. In order to better understand the relationship between the above-mentioned voltage measurement module and the critical path inside the chip The mapping relationship of the aging correlation is described below in conjunction with the above-mentioned first characteristic equation and second characteristic equation, and a schematic diagram thereof may be shown in FIG. 2 .

In the case of considering the ambient temperature, it is assumed that the first characteristic equation is:

Voltage_T0=func(Count, Temp),

Voltage_T1=func(Count, Temp),

...

Voltage_Tn=func(Count, Temp).

The second characteristic equation can be:

Vdd_T0=func(Freq,Temp),

Vdd_T1=func(Freq,Temp),

...

Vdd_Tn=func(Freq, Temp).

After the above-mentioned first characteristic equation is obtained, at this time, according to the application requirements, the target measurement value Count_Target of the voltage measurement module is set, and the difference between the different aging times (T1~Tn) of the voltage measurement module relative to the target measurement value at T0 is calculated. The corresponding voltage variation Voltage_variation (T1, T1...Tn||T0), that is, the voltage variation of the power supply voltage corresponding to the target measurement value at time T1 and the power supply voltage corresponding to the target measurement value at time T0 is estimated, and time T2 is estimated The voltage variation of the power supply voltage corresponding to the target measurement value at time T0 and the power supply voltage corresponding to the target measurement value at time T0 is calculated, and the voltage variation of the power supply voltage corresponding to the power supply voltage corresponding to the target measurement value at time T3 and the target measurement value at time T0 is calculated. , and so on, until the voltage variation of the power supply voltage corresponding to the target measurement value at time Tn and the power supply voltage corresponding to the target measurement value at time T0 is estimated.

After the above-mentioned second characteristic equation is obtained, at this time, according to the application requirements, the target frequency value (Freq_Target) of the critical path module is set, and the different aging times (T1~Tn) of the critical path module are calculated relative to the target frequency value at time T0 The corresponding power supply voltage variation Vdd_variation (T1, T1...Tn||T0), that is, the power supply voltage variation of the power supply voltage corresponding to the target frequency value at time T1 and the power supply voltage corresponding to the target frequency value at time T0, Calculate the power supply voltage variation of the power supply voltage corresponding to the target frequency value at time T2 and the power supply voltage corresponding to the target frequency value at time T0, and estimate the power supply voltage corresponding to the target frequency value at time T3 and the target frequency value at time T0. The power supply voltage variation of , and so on, until the power supply voltage variation of the power supply voltage corresponding to the target frequency value at time Tn and the power supply voltage corresponding to the target frequency value at time T0 is estimated.

The voltage variation corresponding to the target measurement value at time T0 for different aging times (T1~Tn) of the voltage measurement module is calculated and obtained (T1, T1...Tn||T0) and the different aging time (T1) of the critical path module. ~Tn) relative to the power supply voltage variation Vdd_variation (T1, T1...Tn||T0) corresponding to the target frequency value at the time T0, the obtained voltage variation and power supply voltage variation are in a one-to-one correspondence with the same aging time. , and then use suitable models (such as first-order polynomial, multi-order polynomial, exponential model, power-exponential model, multi-power model, etc.) for fitting and characterization, so as to obtain a mapping that characterizes the aging correlation between the voltage measurement module and the critical path inside the chip relation.

The above-mentioned mapping relationship is the mapping relationship between the voltage variation of the voltage measurement module and the power supply voltage variation of the chip. In addition, the mapping relationship can also be the mapping relationship between the measurement value variation and the power supply voltage variation of the chip. The mapping relationship between the voltage variation of the measurement module and the working frequency variation, and the mapping relationship between the measured value variation and the working frequency variation.

Specifically, in one embodiment, when the first characteristic equation is:

Count_T0=func(Voltage,Temp),

Count_T1=func(Voltage,Temp),

...

Count_Tn=func(Voltage, Temp).

The second characteristic equation can be:

Vdd_T0=func(Freq,Temp),

Vdd_T1=func(Freq,Temp),

...

Vdd_Tn=func(Freq, Temp). At this time, the mapping relationship is the mapping relationship between the amount of change in the measured value and the amount of change in the power supply voltage of the chip.

In another embodiment, when the first characteristic equation is:

Count_T0=func(Voltage,Temp),

Count_T1=func(Voltage,Temp),

...

Count_Tn=func(Voltage, Temp).

The second characteristic equation can be:

Freq_T0=func(Vdd,Temp),

Freq_T1=func(Vdd, Temp),

...

Freq_Tn=func(Vdd, Temp). At this time, the mapping relationship is the mapping relationship between the variation of the measured value and the variation of the operating frequency.

In another embodiment, when the first characteristic equation is:

Voltage_T0=func(Count, Temp),

Voltage_T1=func(Count, Temp),

...

Voltage_Tn=func(Count, Temp).

The second characteristic equation can be:

Freq_T0=func(Vdd,Temp),

Freq_T1=func(Vdd, Temp),

...

Freq_Tn=func(Vdd, Temp). At this time, the mapping relationship is the mapping relationship between the voltage change amount and the operating frequency change amount.

Without considering the ambient temperature, the principle of obtaining the mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip based on the above-mentioned first characteristic equation and the second characteristic equation and the above-mentioned case of considering the ambient temperature, based on The above-mentioned first characteristic equation and second characteristic equation obtain the mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip in a similar principle, and will not be described here.

S5: Adjust the power supply voltage or operating frequency of the chip according to the aging compensation value to perform aging compensation.

After calculating the aging compensation value, adjust the power supply voltage or operating frequency of the chip according to the aging compensation value to perform aging compensation.

In one embodiment, if the aging compensation value corresponding to the aging degree of the critical path is the working frequency at the current moment, when performing the aging compensation, the working frequency of the chip may be adjusted to be consistent with the working frequency at the current moment to perform the aging compensation. In this embodiment, the aging compensation is performed by adjusting the operating frequency of the chip.

In one embodiment, if the aging compensation value corresponding to the aging degree of the critical path is the power supply voltage corresponding to the target operating frequency at the current moment, the aging compensation can be performed by adjusting the power supply related modules (such as the external power supply module of the chip or the internal power supply module of the chip). The output voltage of the LDO (low dropout regulator, low dropout linear regulator)) makes its output value consistent with the power supply voltage at the current moment to perform aging compensation. In this embodiment, the aging compensation is performed by adjusting the operating voltage of the chip.

In order to better understand the above-mentioned chip aging compensation method, the following description is made with reference to a specific implementation manner shown in FIG. 3 . It should be noted that the embodiment shown in FIG. 3 is only one of many embodiments of the present application, and therefore should not be construed as a limitation on the present application.

When the aging measurement conditions are met, the voltage measurement module is connected to a preset reference voltage (which may be a chip power supply voltage, or other external power supply voltage, which is a known value) to obtain the measurement value at the current moment. Then calculate the initial measurement value corresponding to the preset reference voltage at the initial moment under the same ambient temperature based on the first characteristic equation, and calculate the measurement value change between the measurement value at the current moment and the initial measurement value at the initial moment. If the measurement value variation is greater than the preset threshold value, the voltage value corresponding to the specified target measurement value under the same ambient temperature is obtained in combination with the first characteristic equation, and the voltage change between the current moment voltage value corresponding to the specified target measurement value and the initial voltage value at the initial moment is obtained, thereby Get the aging degree of the voltage measurement module. Then, combining the mapping relationship between the voltage measurement module and the aging correlation of the critical path inside the chip, the aging degree of the critical path, such as the power supply voltage variation, is obtained. After that, the power supply voltage corresponding to the target frequency at the initial moment under the same ambient temperature is determined based on the second characteristic equation, and the power supply voltage at the current moment is obtained based on the power supply voltage variation and the power supply voltage corresponding to the target frequency, and then the power supply related modules are controlled to adjust the power supply voltage. Output voltage so that the output voltage is consistent with the power supply voltage at the current moment.

Based on the same inventive concept, an embodiment of the present application also provides a chip aging compensation device, the chip aging compensation device is used to: obtain the measurement value of the current moment corresponding to the preset reference voltage measured by the voltage measurement module, based on the The measured value at the current moment and the preset first rule are used to obtain the aging degree of the voltage measurement module, and based on the aging degree of the voltage measurement module and the preset characteristics, the voltage measurement module is related to the aging of the critical path inside the chip. based on the aging degree of the critical path and the preset second rule, obtain the aging compensation value corresponding to the aging degree of the critical path, and obtain the aging compensation value according to the aging degree of the critical path. The power supply voltage or operating frequency of the chip is adjusted for aging compensation.

Wherein, the chip aging compensation device may be a physical device or a virtual device (software function module). In one embodiment, a schematic structural diagram of the chip aging compensation device may be as shown in FIG. 4 . Including acquisition module, aging detection module and compensation module.

Wherein, the obtaining module is used for obtaining the measurement value of the current moment corresponding to the preset reference voltage measured by the voltage measurement module, wherein the voltage measurement module is a voltage measurement module based on a ring oscillator.

An aging detection module, configured to obtain the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, and based on the aging degree of the voltage measurement module and a preset characterizing the voltage measurement The mapping relationship between the aging correlation of the critical path inside the module and the chip, the aging degree of the critical path is obtained, and the aging degree corresponding to the aging degree of the critical path is obtained based on the aging degree of the critical path and the preset second rule compensation value.

A compensation module, configured to adjust the power supply voltage or the operating frequency of the chip according to the aging compensation value to perform aging compensation.

Optionally, the preset first rule includes a first characteristic equation representing the relationship between the power supply voltage, the measured value and the temperature of the voltage measurement module under different aging times, and the obtaining module is further configured to obtain the ambient temperature at the current moment. Correspondingly, the aging detection module is configured to: based on the first characteristic equation, determine the initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature; obtain the measurement value at the current moment and the initial moment The measured value change of the initial measured value of A voltage variation between the voltage value corresponding to the measurement value and the initial voltage value at the initial moment, where the voltage variation represents the aging degree of the voltage measurement module. Or, an aging detection module, configured to: based on the first characteristic equation, determine an initial measurement value corresponding to a preset reference voltage at the initial moment under the ambient temperature; obtain the measurement value at the current moment and the difference between the initial moment The measured value change amount of the initial measured value, the measured value change amount represents the aging degree of the voltage measurement module.

Optionally, the preset second rule includes a second characteristic equation representing the relationship between power supply voltage, operating frequency and temperature of the critical path under different aging times, if the aging degree of the critical path is determined by the chip target The power supply voltage variation corresponding to the operating frequency is represented by the aging detection module, which is used to: determine the power supply voltage corresponding to the target operating frequency at the initial moment under the ambient temperature based on the second characteristic equation; based on the power supply voltage variation The power supply voltage corresponding to the target operating frequency is obtained to obtain the power supply voltage corresponding to the target operating frequency at the current moment, and the power supply voltage corresponding to the target operating frequency at the current moment is the aging compensation value.

If the aging degree of the critical path is represented by the variation of the operating frequency corresponding to the target power supply voltage of the chip, the aging detection module is configured to: determine the target power supply at the initial moment under the ambient temperature based on the second characteristic equation The working frequency corresponding to the voltage; based on the variation of the working frequency and the working frequency corresponding to the target power supply voltage, the working frequency corresponding to the target power supply voltage at the current moment is obtained, and the working frequency corresponding to the target power supply voltage at the current moment is the the aging compensation value.

The implementation principle and technical effects of the chip aging compensation device provided by the embodiments of the present application are the same as those of the foregoing method embodiments. For brief description, for the parts not mentioned in the device embodiments, reference may be made to the corresponding content in the foregoing method embodiments. .

It should be noted that, if the above-mentioned chip aging compensation device is a physical device, the above-mentioned acquisition module may be a transceiver including a port, and the above-mentioned aging detection module may be a processor, a controller or a hardware module with similar functions. The compensation module can be a regulator or a hardware module with similar functions, wherein the regulator can also be a processor, a controller, or the like.

Based on the same inventive concept, an embodiment of the present application further provides an SOC chip, where the SOC chip includes a voltage measurement module and the above-mentioned chip aging compensation device (hardware in this case). The voltage measurement module is connected with a preset reference power supply voltage, and is used for measuring the measurement value at the current moment corresponding to the preset reference power supply voltage, wherein the voltage measurement module is a voltage measurement module based on a ring oscillator.

The chip aging compensation device is connected to the voltage measurement module, and the chip aging compensation device is used to obtain the measurement value at the current moment corresponding to the preset reference voltage measured by the voltage measurement module, based on the measurement value at the current moment and the Presetting the first rule to obtain the aging degree of the voltage measurement module, and based on the aging degree of the voltage measurement module and a preset mapping relationship that characterizes the aging correlation between the voltage measurement module and the critical path inside the chip, obtain The aging degree of the critical path, based on the aging degree of the critical path and the preset second rule, obtain an aging compensation value corresponding to the aging degree of the critical path, and adjust the power supply of the chip according to the aging compensation value voltage or operating frequency for aging compensation.

The SOC (System on Chip) chip may be an SOC chip that further integrates the above-mentioned voltage measurement module and the above-mentioned chip aging compensation device on the basis of the SOC chip involved in the existing large-scale integrated circuit. Among them, the SOC chip involved in the large-scale integrated circuit may be various processors, memory and other chips.

The implementation principle and the technical effect of the chip aging compensation device provided by the SOC chip embodiment are the same as those of the foregoing method embodiment. content.

Based on the same inventive concept, an electronic device provided by an embodiment of the present application includes the above-mentioned SOC chip or the above-mentioned chip aging compensation device. The SOC chip can be a memory or a processor or the like. The electronic device may be a mobile phone, a tablet, a computer, a server, and other devices.

Based on the same inventive concept, as shown in FIG. 5 , FIG. 5 shows a structural block diagram of an electronic device 200 provided by an embodiment of the present application. The electronic device 200 includes: a transceiver 210 , a memory 220 , a communication bus 230 and a processor 240 .

The transceiver 210 , the memory 220 , and the processor 240 are electrically connected to each other directly or indirectly to realize data transmission or interaction. For example, these elements can be electrically connected to each other through one or more communication buses 230 or signal lines. The transceiver 210 is used for sending and receiving data. The memory 220 is used to store computer programs, such as the software function modules shown in FIG. 4 , that is, the chip aging compensation device. The chip aging compensation device includes at least one software function module that can be stored in the memory 220 in the form of software or firmware (Firmware) or solidified in an operating system (Operating System, OS) of the electronic device 200 . The processor 240 is configured to execute executable modules stored in the memory 220, such as software function modules or computer programs included in the chip aging compensation apparatus. For example, the processor 240 is configured to use a voltage measurement module to measure the measurement value at the current moment corresponding to the preset reference voltage, wherein the voltage measurement module is a voltage measurement module based on a ring oscillator; the measurement based on the current moment value and a preset first rule to obtain the aging degree of the voltage measurement module; based on the aging degree of the voltage measurement module and a preset mapping relationship representing the aging correlation between the voltage measurement module and the critical path inside the chip, Obtain the aging degree of the critical path; obtain an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule; adjust the power supply of the chip according to the aging compensation value voltage or operating frequency for aging compensation.

Wherein, the memory 220 may be, but not limited to, random access memory (Random Access Memory, RAM), read only memory (Read Only Memory, ROM), programmable read only memory (Programmable Read-Only Memory, PROM), erasable memory In addition to read-only memory (Erasable Programmable Read-Only Memory, EPROM), Electrical Erasable Programmable Read-Only Memory (Electric Erasable Programmable Read-Only Memory, EEPROM) and the like.

The processor 240 may be an integrated circuit chip with signal processing capability. The above-mentioned processor may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU), a network processor (Network Processor, NP), etc.; may also be a digital signal processor (Digital Signal Processor, DSP), application-specific integrated circuit (Application Specific Integrated Circuit, ASIC), Field Programmable Gate Array (Field Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, and discrete hardware components. The methods, steps, and logic block diagrams disclosed in the embodiments of this application can be implemented or executed. A general purpose processor may be a microprocessor or the processor 240 may be any conventional processor or the like.

Embodiments of the present application also provide a non-volatile computer-readable storage medium (hereinafter referred to as storage medium), where a computer program is stored on the storage medium, and when the computer program is run by a computer such as the above-mentioned electronic device 200, Perform the chip burn-in compensation method shown above.

It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. For the same and similar parts among the various embodiments, refer to each other Can.

In the several embodiments provided in this application, it should be understood that the disclosed apparatus and method may also be implemented in other manners. The apparatus embodiments described above are merely illustrative, for example, the flowcharts and block diagrams in the accompanying drawings illustrate the architectures, functions and possible implementations of apparatuses, methods and computer program products according to various embodiments of the present application. operate. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code that contains one or more functions for implementing the specified logical function(s) executable instructions. It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It is also noted that each block of the block diagrams and/or flowchart illustrations, and combinations of blocks in the block diagrams and/or flowchart illustrations, can be implemented in dedicated hardware-based systems that perform the specified functions or actions , or can be implemented in a combination of dedicated hardware and computer instructions.

In addition, each functional module in each embodiment of the present application may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

If the functions are implemented in the form of software function modules and sold or used as independent products, they may be stored in a computer-readable storage medium. Based on such understanding, the technical solution of the present application can be embodied in the form of a software product in essence, or the part that contributes to the prior art or the part of the technical solution, and the computer software product is stored in a computer-readable storage medium , including several instructions to cause a computer device (which may be a personal computer, a notebook computer, a server, or an electronic device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned computer-readable storage medium includes: U disk, mobile hard disk, read-only memory (Read-Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disks or optical disks, etc. medium of code.

The above are only specific embodiments of the present application, but the protection scope of the present application is not limited to this. should be covered within the scope of protection of this application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims (11)

1. A method for compensating for chip aging, comprising:

measuring a measurement value at the current moment corresponding to a preset reference voltage by using a voltage measurement module, wherein the voltage measurement module is based on a ring oscillator;

obtaining the aging degree of the voltage measuring module based on the measured value at the current moment and a preset first rule;

obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and the critical path in the chip;

obtaining an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the key path and a preset second rule;

and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

2. The method of claim 1, wherein the preset first rule comprises a first characteristic equation characterizing a relationship between supply voltage, measurement value and temperature of the voltage measurement module at different aging times, and wherein the method further comprises:

acquiring the environmental temperature at the current moment; accordingly, the number of the first and second electrodes,

obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, wherein the aging degree of the voltage measurement module comprises the following steps:

determining an initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature based on the first characteristic equation;

acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment;

if the measured value variation exceeds a preset threshold value, acquiring a voltage value corresponding to a specified target measured value under the ambient temperature based on the first characteristic equation, and acquiring a voltage variation of the voltage value corresponding to the specified target measured value and an initial voltage value at an initial moment, wherein the voltage variation represents the aging degree of the voltage measurement module.

3. The method of claim 1, wherein the preset first rule comprises a first characteristic equation characterizing a relationship between supply voltage, measurement value and temperature of the voltage measurement module at different aging times, and wherein the method further comprises:

acquiring the environmental temperature at the current moment; accordingly, the number of the first and second electrodes,

obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, wherein the aging degree of the voltage measurement module comprises the following steps:

determining an initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature based on the first characteristic equation;

and acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment, wherein the measured value variation represents the aging degree of the voltage measuring module.

4. The method according to claim 1, wherein if the aging degree of the critical path is characterized by a power supply voltage variation corresponding to the target operating frequency of the chip, the preset second rule includes a second characteristic equation characterizing the relationship among the power supply voltage, the operating frequency and the temperature of the critical path at different aging times; the method further comprises the following steps:

acquiring the environmental temperature at the current moment; accordingly, the number of the first and second electrodes,

obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule, wherein the aging compensation value comprises:

determining a power supply voltage corresponding to a target working frequency at an initial moment under the environment temperature based on the second characteristic equation;

and obtaining the power supply voltage corresponding to the target working frequency at the current moment based on the power supply voltage variation and the power supply voltage corresponding to the target working frequency, wherein the power supply voltage corresponding to the target working frequency at the current moment is the aging compensation value.

5. The method according to claim 1, wherein if the aging degree of the critical path is characterized by the variation of the operating frequency corresponding to the target power voltage of the chip, the preset second rule includes a second characteristic equation characterizing the relationship among the power voltage, the operating frequency and the temperature of the critical path at different aging times; the method further comprises the following steps:

acquiring the environmental temperature at the current moment; accordingly, the number of the first and second electrodes,

obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule, wherein the aging compensation value comprises:

determining the working frequency corresponding to the target power supply voltage at the initial moment under the environment temperature based on the second characteristic equation;

and obtaining the working frequency corresponding to the target power supply voltage at the current moment based on the working frequency variation and the working frequency corresponding to the target power supply voltage, wherein the working frequency of the target power supply voltage at the current moment is the aging compensation value.

6. The method of claim 1, wherein adjusting the power supply voltage or the operating frequency of the chip according to the aging compensation value for aging compensation comprises:

if the aging compensation value corresponding to the aging degree of the critical path is the working frequency corresponding to the target power supply voltage at the current moment, adjusting the working frequency of the chip to be consistent with the working frequency corresponding to the target power supply voltage at the current moment so as to perform aging compensation;

and if the aging compensation value corresponding to the aging degree of the critical path is the power supply voltage corresponding to the target working frequency at the current moment, adjusting the power supply voltage of the chip to enable the value of the power supply voltage to be consistent with the power supply voltage corresponding to the target working frequency at the current moment so as to perform aging compensation.

7. A method according to claim 2 or 3, characterized in that the method further comprises:

obtaining the measured values of the voltage measuring module under the conditions of different power supply voltages and different temperatures, and fitting to obtain an expression of the relation among the power supply voltages, the measured values and the temperatures at the initial moment;

the method comprises the steps of obtaining corresponding measured values of a voltage measuring module after being processed in different aging times under different power supply voltages and different temperature conditions, fitting to obtain expressions of relationships among the power supply voltages, the measured values and the temperatures in the different aging times, and obtaining a first characteristic equation representing the relationships among the power supply voltages, the measured values and the temperatures of the voltage measuring module in the different aging times, wherein the first characteristic equation comprises the expressions representing the relationships among the power supply voltages, the measured values and the temperatures in the initial time and the expressions representing the relationships among the power supply voltages, the measured values and the temperatures in the different aging times.

8. The method according to claim 4 or 5, characterized in that the method further comprises:

obtaining frequency values of a critical path module under different power supply voltages and different temperatures, and fitting to obtain an expression of relation among the power supply voltages, the frequency values and the temperatures at an initial moment, wherein the critical path module is a ring oscillator composed of logic gate devices in the critical path;

obtaining frequency values of the key path module processed by different aging times under different power supply voltages and different temperature conditions, fitting to obtain expressions of relationships among the power supply voltages, the frequency values and the temperatures under different aging times, and obtaining a second characteristic equation representing the relationships among the power supply voltages, the working frequencies and the temperatures of the key path under different aging times, wherein the second characteristic equation comprises the expressions of the relationships among the power supply voltages, the frequency values and the temperatures at the initial time and the expressions of the relationships among the power supply voltages, the frequency values and the temperatures under different aging times.

9. A chip aging compensation apparatus, comprising:

the voltage measurement module is used for measuring the current time corresponding to the preset reference voltage;

the aging detection module is used for obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and a chip internal critical path, and obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule;

and the compensation module is used for adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value so as to perform aging compensation.

10. An SOC chip, comprising:

the voltage measurement module is connected with a preset reference voltage and used for measuring a measurement value of the preset reference voltage at the current moment, wherein the measurement of the voltage measurement module is based on a ring oscillator;

the chip aging compensation device is connected with the voltage measurement module and used for acquiring the measured value at the current moment, acquiring the aging degree of the voltage measurement module based on the measured value at the current moment and a preset first rule, acquiring an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the voltage measurement module and a preset characterization mapping relation of the voltage measurement module and the aging correlation of the key path in the chip, and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

11. An electronic device, comprising: comprising a body and a chip degradation compensation device according to claim 9, or a SOC chip according to claim 10.

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