CN114300340B - A method for reducing silicon residue on wafer surface - Google Patents
A method for reducing silicon residue on wafer surface Download PDFInfo
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Abstract
The invention discloses a method for reducing silicon residue on the surface of a wafer, and belongs to the technical field of semiconductors. The invention relates to a method for reducing silicon residue on the surface of a wafer, which comprises the following steps of (1) dissolving a surfactant and strong alkali weak acid salt in deionized water to obtain wafer cleaning liquid, (2) treating the wafer with the wafer cleaning liquid and then washing the wafer with deionized water, (3) treating the wafer with HF aqueous solution and then washing the wafer with deionized water, (4) treating the wafer with alkaline solution and then washing the wafer with deionized water, and then drying the washed wafer.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a method for reducing silicon residues on the surface of a wafer.
Background
Gallium arsenide and indium phosphide wafers are important compound semiconductor materials, have excellent properties such as high heat conductivity, high electron saturation drift velocity and high radiation resistance, are used for manufacturing high-frequency and high-speed microwave devices and photoelectric integrated circuits, are the preferred substrate materials in the fields of optical fiber communication, lasers, millimeter wave heterojunction bipolar transistors, high electron mobility transistors and the like which are rapidly developed at present, and are required to be grown on the surface of a high-quality substrate by molecular beam epitaxy or organic metal compound vapor phase epitaxy, and are required to be designed in the structure of the device by carrying out epitaxial mechanism growth on the surface of the substrate by molecular beam epitaxy or organic metal compound vapor phase epitaxy, so that the surface of a gallium arsenide and indium phosphide single crystal wafer is required to have good surface flatness and finally be cleaned to remove particles and metal ions on the surface.
At present, chinese patent CN 102064090A discloses a cleaning method of a gallium arsenide wafer, chinese patent CN 102456549A discloses a cleaning method of an indium phosphide wafer, particles and metal ions on the surface can be removed, good surface flatness is obtained, but silicon impurities in deionized water and silicon dioxide in polishing solution in a chemical mechanical polishing process are possibly remained on the surface of the wafer due to pollution of cleaning equipment and clean room air, and Si is used as shallow donor impurities in epitaxial growth of a device to generate an N-type conducting layer at an interface between a substrate and an epitaxial layer, so that the performance of an epitaxial device is affected.
Disclosure of Invention
The present invention is directed to a method for reducing silicon residue on a wafer surface with high efficiency.
In order to achieve the above purpose, the technical scheme adopted by the invention is that the method for reducing silicon residue on the surface of the wafer comprises the following steps:
(1) Dissolving a surfactant and strong alkali weak acid salt in deionized water to obtain a wafer cleaning solution;
(2) After the wafer is treated by the wafer cleaning liquid, the wafer is rinsed by deionized water;
(3) Treating the wafer with HF aqueous solution and rinsing with deionized water;
(4) After the wafer is treated with the alkaline solution and rinsed with deionized water, the rinsed wafer is dried.
The invention firstly uses the surfactant and the strong alkali weak acid salt to carry out preliminary cleaning on the wafer, and then carries out acid washing and alkali washing in sequence, and the combination of the cleaning method can effectively reduce the residual silicon concentration on the surface of the wafer, improve the cleaning quality of the wafer and ensure the flatness of the surface of the cleaned wafer under the condition of using the cleaning agent as little as possible, thereby avoiding the damage of the N-type conductive layer formed at the interface of the surface of the wafer and the epitaxial layer formed by the residual silicon to the performance of the wafer.
As a preferred embodiment of the method for reducing silicon residue on a wafer surface according to the present invention, the surfactant is a nonionic surfactant.
The nonionic surfactant is preferred here because, on the one hand, the nonionic surfactant has good emulsifying, dispersing and dissolving effects, and, on the other hand, the nonionic surfactant is free from charges in the solvent throughout the molecules, i.e., its groups are not dissociated in the solvent, but hydrogen bonds are formed with water molecules in the form of polar functional groups, so that the positive or negative charges carried by dissociation are prevented from being adsorbed on the wafer surface, which adversely affects the wafer performance and the subsequent cleaning process.
As a preferred embodiment of the method for reducing silicon residue on the wafer surface according to the present invention, the surfactant is alkylphenol ethoxylate nonionic surfactant.
The alkylphenol polyoxyethylene ether is preferable as a component of the wafer cleaning liquid of the invention because of good wetting, penetrating and washing capabilities, good emulsifying capability, and good chemical stability, and is not easily damaged by strong acid and strong base, so that the alkylphenol polyoxyethylene ether can be well matched with strong base weak acid salt to form the wafer cleaning liquid with excellent capability of removing impurities on the surface of the wafer in the early stage.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer according to the present invention, the surfactant includes nonylphenol polyoxyethylene ether, octylphenol polyoxyethylene ether, and dodecylpolyoxyethylene ether.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer according to the present invention, the mass ratio of the surfactant to the strong alkali weak acid salt is (1.2-2.0): 1.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer according to the present invention, the mass ratio of the surfactant to the strong alkali weak acid salt is (1.2-1.6): 1.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer according to the present invention, the ratio of the sum of the mass of the surfactant and the strong alkali weak acid salt to the volume of deionized water is (15-25) g/1L.
When the mass ratio of the surfactant to the strong alkali weak acid salt is in the range of (1.2-2.0): 1, particularly in the range of (1.2-1.6): 1, and the volume ratio of the sum of the mass of the surfactant and the strong alkali weak acid salt to the deionized water is in the range of (15-25) g:1L, the purpose of preliminary cleaning of wafers can be more effectively achieved, so that the number of wafers which can be cleaned is more when the HF aqueous solution and the alkaline solution with the same volume are used for cleaning in the later stage, from the side, the use amount of the HF aqueous solution and the alkaline solution in the later stage can be effectively reduced, thereby ensuring safe production to a certain extent, and having economic and environment-friendly benefits.
As a preferred embodiment of the method for reducing silicon residue on a wafer surface according to the present invention, the strong alkali weak acid salt includes at least one of sodium carbonate, potassium carbonate, sodium acetate, sodium phosphate, sodium silicate, and potassium acetate.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer, in the step (2), the treatment time is 3-10 minutes, and the treatment temperature is 40-45 ℃.
As a preferred embodiment of the method for reducing silicon residue on a wafer surface according to the present invention, in the step (2), the treatment mode includes static soaking or rotating the wafer in a wafer cleaning solution.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer, in the step (3), the mass concentration of HF in the aqueous HF solution is 5-40%, the treatment time is 10-60 seconds, and the treatment temperature is less than or equal to 25 ℃.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer according to the present invention, in the step (3), the mass concentration of HF in the aqueous HF solution is 10-20% and the treatment temperature is 10-23 ℃.
In the step, the mass concentration of the HF aqueous solution is preferably 5-40%, especially 10-20%, so that production damage caused by the excessively high concentration of the HF aqueous solution can be avoided, loss of the wafer and possible uneven wafer surface caused by corrosion of the wafer surface due to the excessively high concentration of the HF aqueous solution can be avoided, the excessively high silicon concentration of the later wafer surface caused by incomplete reaction due to the excessively low mass concentration of the HF aqueous solution can be avoided, and the effective cleaning effect can not be achieved, and the problems of reduced flatness of the wafer surface caused by corrosion of the wafer surface due to the excessively high temperature and increased reaction time and reduced efficiency caused by reduced reaction rate can be avoided.
As a preferred embodiment of the method for reducing silicon residue on a wafer surface according to the present invention, in the step (3), the treatment mode includes static soaking or rotating the wafer in a wafer cleaning solution.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer according to the present invention, in the step (4), the pH of the alkaline solution is 11-13.
The hydroxyl ions in the alkaline solution can react with silicon compounds such as silicon dioxide on the surface of the wafer to generate soluble silicate ions, so that the silicon concentration on the surface of the wafer is reduced, the quality of the wafer is improved, and when the pH value of the alkaline solution is 11-13, enough hydroxyl ions in the alkaline solution can react with the silicon compounds, and the damage of the over-alkali environment to the surface of the wafer can be avoided.
As a preferred embodiment of the method for reducing silicon residue on the surface of a wafer, in the step (4), the treatment time is 30-120 seconds, and the treatment temperature is 0-15 ℃.
As a preferred embodiment of the method for reducing silicon residue on a wafer surface according to the present invention, in the step (4), the treatment mode includes static soaking or rotating the wafer in a wafer cleaning solution.
Compared with the prior art, the invention has the beneficial effects that:
Firstly, the technical scheme provided by the invention is that the wafer is firstly subjected to preliminary cleaning by using the surfactant and the strong alkali weak acid salt, and then is sequentially subjected to acid washing and alkali washing, and the combination of the cleaning method can effectively reduce the residual silicon concentration on the surface of the wafer, improve the cleaning quality of the wafer and ensure the flatness of the surface of the cleaned wafer under the condition that the cleaning agent is used as little as possible, so that the damage of the N-type conductive layer formed at the interface of the surface of the wafer and the epitaxial layer formed by the residual silicon to the performance of the wafer is avoided;
The wafer cleaning agent which is formed by the surfactant and the strong alkali weak acid salt can reduce the impurities such as greasy dirt, metal compound and the like on the surface of the wafer to a certain extent, so that more wafers subjected to preliminary cleaning can be cleaned under the condition of the same dosage of the HF aqueous solution and the alkaline aqueous solution when the HF aqueous solution and the alkaline aqueous solution are used for cleaning later, the dosage of the HF aqueous solution and the alkaline aqueous solution is reduced, and the effects of safety, environmental protection and economy are achieved;
Thirdly, the method for reducing the silicon residue on the surface of the wafer provided by the technical scheme of the invention is simple to operate and short in time consumption, so that the method can be suitable for practical application.
Detailed Description
For a better description of the objects, technical solutions and advantages of the present invention, the present invention will be further described with reference to the following specific examples.
Example 1
The method for reducing silicon residue on the surface of a wafer in this embodiment specifically includes the following steps:
(1) 1.5 parts of polyoxyethylene nonylphenol ether and 1 part of sodium carbonate are weighed and dissolved in 0.125 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium carbonate to the deionized water is 20g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution for 5 minutes, and then taking out the wafer and rinsing with deionized water;
(3) Immersing the wafer treated in the step (2) in an HF aqueous solution with the mass concentration of 15% and the temperature of 15-18 ℃ for 20 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an alkaline aqueous solution with a pH value of 12 and a temperature of 5-10 ℃ for 80 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Example 2
The method for reducing silicon residue on the surface of a wafer in this embodiment specifically includes the following steps:
(1) 1.2 parts of polyoxyethylene nonylphenol ether and 1 part of sodium silicate are weighed and dissolved in 0.15 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium silicate to the deionized water is 15g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution, rotating and maintaining for 10 minutes, and then taking out the wafer and flushing with deionized water;
(3) Immersing the wafer treated in the step (2) in an HF aqueous solution with the mass concentration of 12% and the temperature of 10-15 ℃ for rotation and holding for 60 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an alkaline aqueous solution with the pH value of 11 and the temperature of 0-5 ℃ for rotation and holding for 120 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Example 3
The method for reducing silicon residue on the surface of a wafer in this embodiment specifically includes the following steps:
(1) 1.5 parts of polyoxyethylene nonylphenol ether and 1 part of sodium carbonate are weighed and dissolved in 0.1 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium carbonate to the deionized water is 25g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution for 3 minutes, and then taking out the wafer and rinsing with deionized water;
(3) Immersing the wafer treated in the step (2) in an HF aqueous solution with the mass concentration of 19% and the temperature of 20-23 ℃ for 12 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an alkaline aqueous solution with a pH value of 13 and a temperature of 10-15 ℃ for 35 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Example 4
The method for reducing silicon residue on the surface of a wafer in this embodiment specifically includes the following steps:
(1) 2.0 parts of dodecyl polyoxyethylene ether and 1 part of sodium carbonate are weighed and dissolved in 0.105 parts of deionized water to obtain a wafer cleaning liquid, wherein the volume ratio of the sum of the masses of nonylphenol polyoxyethylene ether and sodium carbonate to the deionized water is 20g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution for 5 minutes, and then taking out the wafer and rinsing with deionized water;
(3) Immersing the wafer treated in the step (2) in an HF aqueous solution with the mass concentration of 15% and the temperature of 15-18 ℃ for 20 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an alkaline aqueous solution with a pH value of 12 and a temperature of 5-10 ℃ for 80 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Example 5
The method for reducing silicon residue on the surface of a wafer in this embodiment specifically includes the following steps:
(1) 1.5 parts of polyoxyethylene nonylphenol ether and 1 part of sodium carbonate are weighed and dissolved in 0.125 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium carbonate to the deionized water is 20g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution for 5 minutes, and then taking out the wafer and rinsing with deionized water;
(3) Immersing the wafer treated in the step (2) in an HF aqueous solution with the mass concentration of 5% and the temperature of 15-18 ℃ for 60 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an alkaline aqueous solution with a pH value of 12 and a temperature of 5-10 ℃ for 80 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Example 6
The method for reducing silicon residue on the surface of a wafer in this embodiment specifically includes the following steps:
(1) 1.5 parts of polyoxyethylene nonylphenol ether and 1 part of sodium carbonate are weighed and dissolved in 0.125 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium carbonate to the deionized water is 20g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution for 5 minutes, and then taking out the wafer and rinsing with deionized water;
(3) Immersing the wafer treated in the step (2) in an HF aqueous solution with the mass concentration of 40% and the temperature of 15-18 ℃ for 10 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an alkaline aqueous solution with a pH value of 12 and a temperature of 5-10 ℃ for 80 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Comparative example 1
The method for reducing silicon residue on the surface of the wafer of the comparative example specifically comprises the following steps:
(1) Immersing the wafer in an HF aqueous solution with a mass concentration of 15% and a temperature of 15-18 ℃ for 20 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(2) Immersing the wafer treated in the step (1) in an alkaline aqueous solution with a pH value of 12 and a temperature of 5-10 ℃ for 80 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(3) And (3) drying the wafer processed in the step (2) to obtain the cleaned wafer.
Comparative example 2
The method for reducing silicon residue on the surface of the wafer of the comparative example specifically comprises the following steps:
(1) 1.5 parts of polyoxyethylene nonylphenol ether and 1 part of sodium carbonate are weighed and dissolved in 0.125 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium carbonate to the deionized water is 20g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution for 5 minutes, and then taking out the wafer and rinsing with deionized water;
(3) Immersing the wafer treated in the step (2) in an alkaline aqueous solution with a pH value of 12 and a temperature of 5-10 ℃ for 80 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an HF aqueous solution with the mass concentration of 15% and the temperature of 15-18 ℃ for 20 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Comparative example 3
The method for reducing silicon residue on the surface of the wafer of the comparative example specifically comprises the following steps:
(1) 1 part of nonylphenol polyoxyethylene ether is weighed and dissolved in 0.05 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of nonylphenol polyoxyethylene ether to deionized water is 20g to 1L;
(2) Maintaining the temperature of the wafer cleaning solution at 40-45 ℃, immersing the wafer in the wafer cleaning solution for 5 minutes, and then taking out the wafer and rinsing with deionized water;
(3) Immersing the wafer treated in the step (2) in an HF aqueous solution with the mass concentration of 15% and the temperature of 15-18 ℃ for 20 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(4) Immersing the wafer treated in the step (3) in an alkaline aqueous solution with a pH value of 12 and a temperature of 5-10 ℃ for 80 seconds, and then taking out the wafer and flushing the wafer with deionized water;
(5) And (3) drying the wafer processed in the step (4) to obtain the cleaned wafer.
Comparative example 4
The only difference between the comparative example and the example 1 is that 1.5 parts of cetyltrimethylamine bromide and 1 part of sodium carbonate are weighed in the step (1) of the comparative example and dissolved in 0.125 part of deionized water to obtain a wafer cleaning liquid, wherein the volume ratio of the sum of the masses of the nonylphenol polyoxyethylene ether and the sodium carbonate to the deionized water is 20g to 1L.
Comparative example 5
The only difference between the comparative example and the example 1 is that in the step (1) of the comparative example, 2 parts of polyoxyethylene nonylphenol ether and 0.5 part of sodium carbonate are weighed and dissolved in 0.125 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium carbonate to the deionized water is 20g to 1L.
Comparative example 6
The only difference between the comparative example and the example 1 is that in the step (1) of the comparative example, 0.5 part of polyoxyethylene nonylphenol ether and 2 parts of sodium carbonate are weighed and dissolved in 0.125 part of deionized water to obtain a wafer cleaning solution, wherein the volume ratio of the sum of the mass of polyoxyethylene nonylphenol ether and the mass of sodium carbonate to the deionized water is 20g to 1L.
Comparative example 7
The only difference between this comparative example and example 1 is that the aqueous HF solution in step (3) of this comparative example has a mass concentration of 55%.
Comparative example 8
The only difference between this comparative example and example 1 is that the temperature in step (3) of this comparative example was 35 ℃.
Comparative example 9
The only difference between this comparative example and example 1 is that the pH in step (4) of this comparative example was 14.
Effect example
The cleaned wafers prepared in examples 1 to 6 and comparative examples 1 to 9 were subjected to surface flatness and surface silicon concentration detection according to national standard silicon wafer surface flatness measurement method, and the surface silicon concentration detection was performed according to TXRF, and the specific detection results are shown in Table 1;
TABLE 1 test data Table for washed wafers prepared in examples 1-6 and comparative examples 1-9
As can be seen from Table 1, when the technical scheme of the invention is adopted, the prepared crystal has high surface flatness and low silicon concentration, wherein the silicon concentration of examples 1-6 is below 84E10 atoms/cm 2, the surface flatness is below 7.8 mu m, and particularly examples 1-3 have the silicon concentration below 48E10 atoms/cm 2 and the surface flatness is below 6.5 mu m, so that the technical scheme provided by the invention can achieve excellent cleaning effect;
As can be seen from the data of example 1 and comparative example 1, when the preliminary cleaning is performed without using the wafer cleaning agent composed of the surfactant, the strong alkali weak acid salt and the deionized water, the surface silicon concentration of the treated wafer is increased by 411.90% compared with that of the preliminary cleaning, and the surface flatness variation is not obvious, which indicates that the preliminary treatment can effectively reduce the silicon concentration of the wafer surface; as can be seen from the data of example 1 and comparative example 2, when the order of acid washing and alkali washing is changed, if alkali washing is performed before acid washing in comparative example 2, the silicon concentration of the treated product is increased by 119.05% compared with the prior initial washing, the value of the surface flatness is increased by 48.39% compared with the prior initial washing, which means that the acid washing before alkali washing can effectively reduce the silicon concentration of the wafer surface and can effectively improve the wafer surface flatness, this is probably because the acid washing before alkali washing can firstly treat metal and metal compounds on the crystal surface, if alkali washing is firstly adopted, part of the metal and metal compounds can react with alkali liquid to form water-insoluble precipitate which is then difficult to remove in the later stage of the wafer surface, and part of silicon ions can be deposited inside in the process of deposition, thereby reducing the flatness of the wafer surface, the effect of reducing the silicon concentration is not obvious, from the data of example 1 and comparative example 3 can be seen that the effect of the surface activator is not enhanced from the prior stage wafer cleaning is only when the alkali activator is not treated in the prior stage wafer is not enhanced, the surface activator is only surface-treated with deionized water, but also apparent from the data of example 1 and comparative example 3 is shown that the surface activator is not shown in the surface activator is treated, the silicon concentration of the treated product is high and the surface flatness value is also high, because the ionic surfactant dissociates to form positive and negative ions during the treatment, so that the metal, the metal compound and the substances thereof on the original wafer surface can be combined, and the surface silicon concentration is increased and the wafer surface is uneven as a result, as can be seen from the data of the example 1 and the comparative examples 5-6, the silicon concentration is greatly influenced when the amount of the surfactant is too high or too low, as can be seen from the data of the example 1 and the comparative examples 7-9, the silicon concentration reducing effect of the treated product on the wafer surface is obvious when the mass concentration in the HF aqueous solution is too high or the temperature during the acid washing is too high or the pH of the alkali washing is too high, but the three can lead to the flatness of the treated wafer surface to be obviously reduced, wherein the change of the flatness is the largest when the concentration of HF is too high, and the flatness value is increased by 24% compared with the flatness value of the example 1 and 117.74% compared with the flatness value of the example 1.
Finally, it should be noted that the above-mentioned embodiments illustrate rather than limit the scope of the invention, and that those skilled in the art will understand that changes can be made to the technical solutions of the invention or equivalents thereof without departing from the spirit and scope of the technical solutions of the invention.
Claims (4)
1. A method for reducing silicon residue on a wafer surface, comprising the steps of:
(1) Dissolving a surfactant and strong alkali weak acid salt in deionized water to obtain a wafer cleaning solution;
(2) After the wafer is treated by the wafer cleaning liquid, the wafer is rinsed by deionized water;
(3) Treating the wafer with HF aqueous solution and rinsing with deionized water;
(4) Treating the wafer with an alkaline solution, rinsing with deionized water, and drying the rinsed wafer;
the surfactant is alkylphenol polyoxyethylene ether nonionic surfactant;
The strong alkali weak acid salt is at least one of sodium carbonate, potassium carbonate, sodium acetate, sodium phosphate, sodium silicate and potassium acetate;
The mass ratio of the surfactant to the strong alkali weak acid salt is (1.2-2.0): 1;
the ratio of the sum of the mass of the surfactant and the strong alkali weak acid salt to the volume of deionized water is (15-25) g to 1L;
in the step (3), the mass concentration of HF in the HF aqueous solution is 5-40%, the treatment time is 10-60 seconds, and the treatment temperature is less than or equal to 25 ℃;
in the step (4), the pH value of the alkaline solution is 11-13.
2. The method for reducing silicon residue on a wafer surface according to claim 1, wherein in the step (2), the treatment time is 3 to 10 minutes and the treatment temperature is 40 to 45 ℃.
3. The method for reducing silicon residue on a wafer surface according to claim 1, wherein in the step (3), the mass concentration of HF in the aqueous HF solution is 10 to 20% and the treatment temperature is 10 to 23 ℃.
4. The method of reducing silicon residue on a wafer surface according to claim 1, wherein in the step (4), the treatment time is 30 to 120 seconds and the treatment temperature is 0 to 15 ℃.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101088154A (en) * | 2004-12-24 | 2007-12-12 | S.O.I.Tec绝缘体上硅技术公司 | Method for treating the surface of a wafer |
| CN103589538A (en) * | 2013-08-30 | 2014-02-19 | 横店集团东磁股份有限公司 | Cleaning liquid of solar silicon wafer as well as using method thereof |
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