CN114284131A - Method for processing wafer - Google Patents
Method for processing wafer Download PDFInfo
- Publication number
- CN114284131A CN114284131A CN202011039462.6A CN202011039462A CN114284131A CN 114284131 A CN114284131 A CN 114284131A CN 202011039462 A CN202011039462 A CN 202011039462A CN 114284131 A CN114284131 A CN 114284131A
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- wafer
- wax
- spray gun
- grinding
- nozzle
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000012545 processing Methods 0.000 title claims description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000004698 Polyethylene Substances 0.000 claims description 16
- -1 polyethylene Polymers 0.000 claims description 16
- 229920000573 polyethylene Polymers 0.000 claims description 16
- 239000007921 spray Substances 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 13
- 238000005507 spraying Methods 0.000 claims description 12
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- 238000004018 waxing Methods 0.000 claims description 6
- 238000003672 processing method Methods 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of microelectronics, and discloses a wafer processing method, which comprises the following steps: heating the wafer to a preset temperature, and keeping the wafer at the preset temperature; coating melted wax on the front surface of the wafer; sticking the waxed front side of the wafer on a machine table; applying preset pressure to the back of the wafer; and grinding the back of the wafer. By adopting the embodiment of the invention, the phenomenon that the wafer is cracked in the bottom grinding process can be reduced.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a wafer processing method.
Background
With the development of science and technology, the application of chips is more and more extensive, and the requirement on the processing precision is higher and higher. In the wafer processing, a conventional method for grinding a wafer to be thin includes adhering the wafer to a jig using a photoresist material, and grinding the wafer, however, the photoresist material is hard after being cured, and the wafer is easily broken due to the vibration of the grinding wheel.
Disclosure of Invention
The embodiment of the invention aims to provide a processing method of a wafer, which can reduce the phenomenon of cracking of the wafer in the bottom grinding process.
In order to solve the above technical problem, an embodiment of the present invention provides a method for processing a wafer, including:
heating the wafer to a preset temperature, and keeping the wafer at the preset temperature;
coating melted wax on the front surface of the wafer;
sticking the waxed front side of the wafer on a machine table;
applying preset pressure to the back of the wafer;
and grinding the back of the wafer.
As an improvement of the scheme, the preset temperature is 110-120 ℃.
As an improvement of the above scheme, the coating of the melted wax on the front surface of the wafer specifically includes:
the melted wax is sprayed onto the front side of the wafer with a spray gun.
As an improvement of the above scheme, the spray gun is an air spray gun;
when spraying is performed, the compression force of compressed air is 2.5-4.0atm, the supply rate of compressed air is 0.1-0.3ml/s, the moving speed of the nozzle is 1.0-1.5cm/s, the distance from the nozzle to the wafer is 0.5-1.0mm, and the width of the wax droplet is 3.0-4.0 mm.
As an improvement of the scheme, when spraying is carried out, the distance between every two wax drops is controlled to be smaller than the width of the wax drops.
As a refinement of the above, the wax is a polyethylene wax.
As an improvement of the scheme, the time for waxing is not more than 20 minutes.
As an improvement of the scheme, the preset pressure is 5.5-6.0 kg.
As an improvement of the above solution, before the polishing the back surface of the wafer, the method further includes:
and glue is dripped into the junction of the outer edge of the wafer and the machine table.
As an improvement of the above scheme, the glue is 502 curing glue.
The embodiment of the invention has the following beneficial effects:
the embodiment of the invention provides a processing method of a wafer, which comprises the steps of heating the wafer to a preset temperature, and keeping the wafer at the preset temperature; coating the melted wax on the front surface of the wafer; then pasting the waxed front side of the wafer on a machine table; then, applying preset pressure to the back of the wafer; and grinding the back surface of the wafer. Based on the analysis, the texture of the wax is softer than that of the solidified photoresist, so that the wax can play a role in damping in the bottom grinding process of the wafer, the phenomenon of wafer breakage can be reduced, and the yield is improved.
Drawings
Fig. 1 is a flowchart of a method for processing a wafer according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, which is a flowchart illustrating a method for processing a wafer according to an embodiment of the present invention, the method includes the following steps:
s10, heating the wafer to a preset temperature, and keeping the wafer at the preset temperature;
s11, coating the melted wax on the front surface of the wafer;
s12, adhering the waxed front surface of the wafer to a machine table;
s13, applying preset pressure to the back of the wafer;
and S14, grinding the back of the wafer.
In this embodiment, the wafer is first heated to a predetermined temperature, and the wafer is kept at the predetermined temperature; coating the melted wax on the front surface of the wafer; then pasting the waxed front side of the wafer on a machine table; then, applying preset pressure to the back of the wafer; and grinding the back surface of the wafer. Based on the analysis, the texture of the wax is softer than that of the solidified photoresist, so that the wax can play a role in damping in the bottom grinding process of the wafer, the phenomenon of wafer breakage can be reduced, and the yield is improved.
After the waxed front surface of the wafer is adhered to a machine table, a preset pressure is applied to the back of the wafer, so that the wax inside the wafer can be uniformly coated, and meanwhile, bubbles in the middle are extruded.
As an alternative embodiment, in order to ensure that the integrated circuits inside the wafer are not damaged, the preset temperature is within a temperature range that the integrated circuits inside the wafer can bear.
Preferably, the preset temperature is 110-.
As one optional embodiment, the step S11 specifically includes:
the melted wax is sprayed onto the front side of the wafer with a spray gun.
In the present embodiment, the melted wax is sprayed onto the front surface of the wafer by using the spray gun, so that the uniformity of the wax coating can be improved.
Further, the spray gun is an air spray gun;
when spraying is performed, the compression force of compressed air is 2.5-4.0atm, the supply rate of compressed air is 0.1-0.3ml/s, the moving speed of the nozzle is 1.0-1.5cm/s, the distance from the nozzle to the wafer is 0.5-1.0mm, and the width of the wax droplet is 3.0-4.0 mm.
The air lance may be embodied, for example, to include a wax-bearing container and a pressurizing device. The container for bearing the wax is usually a needle-cylinder-shaped stainless steel tube, the head part is a stainless steel nozzle, the rear part is provided with a compressed air pipeline communicated with a pressurizing device, and the pressurizing device is a device for pressurizing by compressed air, so that the melted polyethylene wax in the container can be sprayed out from the front end and uniformly coated on the front surface of the wafer.
Further, the distance between each two wax drops is controlled to be smaller than the width of the wax drops when spraying is performed.
In this embodiment, the distance between every two wax drops is controlled to be smaller than the width of the wax drop, so that the uniformity of coating can be improved.
As an alternative embodiment, the wax is polyethylene wax.
Illustratively, the polyethylene WAX is model WAX325 MP. The polyethylene wax has a melting point of 106 ℃, a softening point of 109 ℃ and a melt viscosity of 205.
Further, the time for waxing does not exceed 20 minutes.
It should be noted that, since the waxing time exceeds 20 minutes, the chemical property of the polyethylene wax may be changed, and therefore, the waxing time is controlled not to exceed 20 minutes in this embodiment, so as to ensure the waxing quality.
As one of the alternative embodiments, the preset pressure is 5.5-6.0 kg.
As one optional embodiment, before the step S14, the method further includes:
and S21, dripping glue at the interface between the outer edge of the wafer and the machine table.
It should be noted that, since the wax only plays a role of shock absorption and the bonding force is not large, the glue is dropped on the outer edges of the machine and the wafer, so that the wafer and the machine are firmly connected together, and the wafer can be prevented from sliding off when the bottom is ground.
Preferably, the glue is a 502 curing glue.
The following describes an implementation process of the present solution by a first specific embodiment, including: (1) placing the wafer on a heating plate to stabilize the temperature at 110 ℃; (2) melting wax, spraying melted polyethylene wax from the front end of a spray gun, and uniformly coating the melted polyethylene wax on the front surface of the wafer, wherein the molten polyethylene wax is kept to be coated in 20 minutes during wax spraying, and the compression force of compressed air is as follows: 2.5atm, feed rate: 0.1ml/s, the moving speed of the nozzle is: 1.0cm/s, the height of the nozzle and the wafer is: 0.5mm, the width/diameter of the wax droplet is: 3.0mm, the spray gun can be provided with only one nozzle or a plurality of nozzles, and the coating is uniform, so that the distance of each wax drop is less than 3.0mm of the width/diameter of the wax drop; (3) taking down the wafer, adhering the waxed front side of the wafer on a machine table, and applying 5.5kg of force to the back during adhesion to uniformly coat the wax inside and extrude out bubbles in the middle to ensure that the thickness of a wax layer is between 0.5mm and 1.0 mm; (4) because the wax only plays a role in shock absorption and has small bonding force, 502 solidification glue is dripped into the outer edges of the machine table and the wafer; (5) the machine is finished grinding.
The implementation of the present solution is described below by a second specific embodiment, which includes: (1) placing the wafer on a heating plate to enable the temperature of the wafer to be stable at 115 ℃; (2) melting wax, spraying melted polyethylene wax from the front end of a spray gun, and uniformly coating the melted polyethylene wax on the front surface of the wafer, wherein the molten polyethylene wax is kept to be coated in 20 minutes during wax spraying, and the compression force of compressed air is as follows: 3.25atm, feed rate: 0.2ml/s, the moving speed of the nozzle is: 1.25cm/s, the height of the nozzle and wafer is: 0.75mm, the width/diameter of the wax droplet is: 3.5mm, the spray gun can be provided with only one nozzle or a plurality of nozzles, and the coating is uniform, so that the distance of each wax drop is less than 3.5mm of the width/diameter of the wax drop; (3) taking down the wafer, adhering the waxed front side of the wafer on a machine table, and applying 5.75kg of force to the back during adhesion to uniformly coat the wax inside and extrude out bubbles in the middle to ensure that the thickness of a wax layer is between 0.5mm and 1.0 mm; (4) because the wax only plays a role in shock absorption and has small bonding force, 502 solidification glue is dripped into the outer edges of the machine table and the wafer; (5) the machine is finished grinding.
The implementation of the present solution is described below by a third specific embodiment, which includes: (1) placing the wafer on a heating plate to ensure that the temperature of the wafer is stabilized at 120 ℃; (2) melting wax, spraying melted polyethylene wax from the front end of a spray gun, and uniformly coating the melted polyethylene wax on the front surface of the wafer, wherein the molten polyethylene wax is kept to be coated in 20 minutes during wax spraying, and the compression force of compressed air is as follows: 4.0atm, feed rate: 0.3ml/s, the moving speed of the nozzle is: 1.5cm/s, the height of the nozzle and the wafer is: 1.0mm, the width/diameter of the wax droplet is: 4.0mm, the spray gun can be provided with only one nozzle or a plurality of nozzles, and the coating is uniform, so that the distance of each wax drop is less than 4.0mm of the width/diameter of the wax drop; (3) taking down the wafer, adhering the waxed front side of the wafer on a machine table, and applying 6.0kg of force to the back side when adhering so that the wax inside can be uniformly coated, and simultaneously extruding out bubbles in the middle to ensure that the thickness of a wax layer is between 0.5mm and 1.0 mm; (4) because the wax only plays a role in shock absorption and has small bonding force, 502 solidification glue is dripped into the outer edges of the machine table and the wafer; (5) the machine is finished grinding.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for processing a wafer is characterized by comprising the following steps:
heating the wafer to a preset temperature, and keeping the wafer at the preset temperature;
coating melted wax on the front surface of the wafer;
sticking the waxed front side of the wafer on a machine table;
applying preset pressure to the back of the wafer;
and grinding the back of the wafer.
2. The method as claimed in claim 1, wherein the predetermined temperature is 110-120 ℃.
3. The method as claimed in claim 1, wherein the applying melted wax to the front surface of the wafer comprises:
the melted wax is sprayed onto the front side of the wafer with a spray gun.
4. The method of claim 3, wherein the spray gun is an air spray gun;
when spraying is performed, the compression force of compressed air is 2.5-4.0atm, the supply rate of compressed air is 0.1-0.3ml/s, the moving speed of the nozzle is 1.0-1.5cm/s, the distance from the nozzle to the wafer is 0.5-1.0mm, and the width of the wax droplet is 3.0-4.0 mm.
5. The method as claimed in claim 4, wherein the distance between every two wax drops is controlled to be smaller than the width of the wax drops when spraying.
6. The method of processing a wafer of any of claims 1-5, wherein the wax is polyethylene wax.
7. The method of claim 6, wherein the waxing time is no more than 20 minutes.
8. The method as claimed in claim 1, wherein the predetermined pressure is 5.5-6.0 kg.
9. The method of claim 1, further comprising, before the grinding the back side of the wafer:
and glue is dripped into the junction of the outer edge of the wafer and the machine table.
10. The method of claim 9, wherein the glue is a 502-cure glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011039462.6A CN114284131A (en) | 2020-09-28 | 2020-09-28 | Method for processing wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011039462.6A CN114284131A (en) | 2020-09-28 | 2020-09-28 | Method for processing wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114284131A true CN114284131A (en) | 2022-04-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011039462.6A Pending CN114284131A (en) | 2020-09-28 | 2020-09-28 | Method for processing wafer |
Country Status (1)
| Country | Link |
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| CN (1) | CN114284131A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0493023A (en) * | 1990-08-09 | 1992-03-25 | Meidensha Corp | Manufacture of semiconductor device |
| JP2001217213A (en) * | 2000-02-02 | 2001-08-10 | Nec Kansai Ltd | Method for polishing semiconductor wafer |
| US20040234690A1 (en) * | 2003-03-12 | 2004-11-25 | Kei Hiruma | Film forming method, film forming device liquid crystal arrangement method, liquid crystal arrangement device, liquid crystal device, liquid crystal device production method and electronic equipment |
| JP2004363244A (en) * | 2003-06-03 | 2004-12-24 | Sumitomo Electric Ind Ltd | Semiconductor manufacturing equipment |
| CN1568540A (en) * | 2001-08-14 | 2005-01-19 | 硅绝缘技术公司 | Method of obtaining a self-supported thin semiconductor layer for electronic circuits |
| CN1572493A (en) * | 2003-05-20 | 2005-02-02 | 精工爱普生株式会社 | Method of discharging liquid drops of alignment film, method of manufacturing electro-optical panel |
| JP2006237085A (en) * | 2005-02-22 | 2006-09-07 | Sumco Corp | Semiconductor wafer bonding method and apparatus thereof |
| CN101150059A (en) * | 2007-10-31 | 2008-03-26 | 日月光半导体制造股份有限公司 | Wafer Thinning Methods |
| CN101327572A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Technique for thinning back side of silicon wafer |
| CN102682791A (en) * | 2011-03-17 | 2012-09-19 | 东莞新科技术研究开发有限公司 | Elongated strip adhesion device |
| CN103681982A (en) * | 2012-09-26 | 2014-03-26 | 奇力光电科技股份有限公司 | Method for manufacturing light emitting diode |
-
2020
- 2020-09-28 CN CN202011039462.6A patent/CN114284131A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0493023A (en) * | 1990-08-09 | 1992-03-25 | Meidensha Corp | Manufacture of semiconductor device |
| JP2001217213A (en) * | 2000-02-02 | 2001-08-10 | Nec Kansai Ltd | Method for polishing semiconductor wafer |
| CN1568540A (en) * | 2001-08-14 | 2005-01-19 | 硅绝缘技术公司 | Method of obtaining a self-supported thin semiconductor layer for electronic circuits |
| US20040234690A1 (en) * | 2003-03-12 | 2004-11-25 | Kei Hiruma | Film forming method, film forming device liquid crystal arrangement method, liquid crystal arrangement device, liquid crystal device, liquid crystal device production method and electronic equipment |
| CN1572493A (en) * | 2003-05-20 | 2005-02-02 | 精工爱普生株式会社 | Method of discharging liquid drops of alignment film, method of manufacturing electro-optical panel |
| JP2004363244A (en) * | 2003-06-03 | 2004-12-24 | Sumitomo Electric Ind Ltd | Semiconductor manufacturing equipment |
| JP2006237085A (en) * | 2005-02-22 | 2006-09-07 | Sumco Corp | Semiconductor wafer bonding method and apparatus thereof |
| CN101327572A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Technique for thinning back side of silicon wafer |
| CN101150059A (en) * | 2007-10-31 | 2008-03-26 | 日月光半导体制造股份有限公司 | Wafer Thinning Methods |
| CN102682791A (en) * | 2011-03-17 | 2012-09-19 | 东莞新科技术研究开发有限公司 | Elongated strip adhesion device |
| CN103681982A (en) * | 2012-09-26 | 2014-03-26 | 奇力光电科技股份有限公司 | Method for manufacturing light emitting diode |
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