CN114280351B - Integrated circuit internal power supply network voltage drop acquisition method and related devices - Google Patents

Abstract

The embodiment of the application provides a method and a related device for acquiring the voltage drop of an internal power supply network of an integrated circuit, wherein the method for acquiring the voltage drop of the internal power supply network of the integrated circuit comprises the following steps: acquiring a power supply voltage of an integrated circuit and a device voltage of a voltage acquisition device of the integrated circuit when the integrated circuit has a work load, wherein the voltage acquisition device is arranged on the integrated circuit; and obtaining a voltage difference between the power supply voltage and the device voltage to obtain a voltage drop from a power supply to an internal power supply network of the integrated circuit. The embodiment of the application can acquire the voltage drop of the internal power supply network of the integrated circuit, which can realize the real-time control of the power supply.

Description

Integrated circuit internal power supply network voltage drop acquisition method and related devices

Technical field

Embodiments of the present application relate to the field of integrated circuits, and specifically relate to a method for obtaining the voltage drop of an internal power supply network of an integrated circuit and related devices.

Background technique

The power supply system of the integrated circuit includes: power supply, power connections, internal power network and internal devices. The internal devices are connected to the internal power network, and the internal power network is connected to the power supply through power connections. During the operation of the integrated circuit, the power connection between the internal power network and the power supply will generate current. At the same time, due to the existence of the internal resistance of the power supply and the internal resistance of the power network, there will be a voltage drop from the power supply to the internal power network, and Since the internal devices are connected to the internal power network, this voltage drop can be considered as the voltage drop from the power supply to the internal devices of the integrated circuit.

When the workload of an integrated circuit suddenly increases, that is, when the number of internal devices working at the same time increases, the voltage on the internal devices of the integrated circuit will drop sharply. The internal devices with reduced voltage will increase the delay time, causing the critical path to fail. The register setup time cannot be met, causing the entire integrated circuit to fail. In order to avoid integrated circuit failure due to voltage reduction, it is necessary to adjust the power supply voltage in real time and control the internal device voltage to be within the range where the integrated circuit can operate normally. Therefore, it is necessary to obtain the voltage drop from the power supply to the internal devices, that is, to obtain the voltage drop from the power supply to the internal power network.

However, according to the existing voltage drop acquisition method, although the voltage drop can be acquired, it cannot be used to control the power supply in real time.

Therefore, how to obtain the voltage drop of the internal power supply network of an integrated circuit in real time, which can be used for real-time control of the power supply, has become a technical problem that those skilled in the art need to solve.

Contents of the invention

In view of this, embodiments of the present application provide a method and related devices for obtaining the voltage drop of the internal power supply network of an integrated circuit, so as to obtain the voltage drop of the internal power supply network of the integrated circuit in real time, which enables real-time control of the power supply.

To achieve the above objectives, embodiments of the present application provide the following technical solutions.

In the first aspect, embodiments of the present application provide a method for obtaining the voltage drop of the internal power supply network of an integrated circuit, including:

Obtain the power supply voltage of the integrated circuit and the device voltage of the voltage acquisition device of the integrated circuit when there is a workload on the integrated circuit, and the voltage acquisition device is provided on the integrated circuit;

The voltage difference between the power supply voltage and the device voltage is obtained to obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit.

In a second aspect, embodiments of the present application provide a voltage drop acquisition device for an internal power supply network of an integrated circuit, including:

A voltage acquisition module, adapted to acquire the power supply voltage of the integrated circuit and the device voltage of the voltage acquisition device of the integrated circuit when the integrated circuit has a workload, and the voltage acquisition device is provided in the integrated circuit;

The voltage drop calculation module is adapted to obtain the voltage difference between the power supply voltage and the device voltage, and obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit.

In a third aspect, embodiments of the present application provide an integrated circuit, including:

Internal power network, connected to the power supply of the integrated circuit;

Internal components of the integrated circuit connected to the internal power network;

A voltage acquisition device is connected to the internal power supply network and is adapted to acquire the voltage value at both ends of the internal device of the integrated circuit in real time.

The method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application, in order to obtain the voltage drop, when the integrated circuit has a workload, obtains the power supply voltage of the integrated circuit and the devices on both sides of the voltage obtaining device arranged inside the integrated circuit voltage, and then calculate the voltage difference between the obtained supply voltage and the device voltage, thereby obtaining the voltage drop from the power supply to the internal power network of the integrated circuit.

It can be seen that the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application can obtain the power supply voltage and voltage of the integrated circuit in real time after the integrated circuit is powered on because the voltage obtaining device is arranged inside the integrated circuit. Obtain the device voltage of the device and calculate the voltage difference between the two to obtain the voltage drop, so that the voltage drop can be obtained in real time only through the integrated circuit. Since the voltage drop is obtained inside the integrated circuit, it can be directly It is passed to the power supply control module belonging to the same integrated circuit to realize real-time control of the power supply. In this way, the method for obtaining the voltage drop of the internal power supply network of the integrated circuit provided by the embodiment of the present application can obtain the voltage drop that can realize the control of the power supply. The voltage drop of the internal power supply network of the integrated circuit is controlled in real time, and the voltage of the variable resistor can be adjusted in real time according to the voltage drop to ensure that the voltage can be stabilized within the desired range. Furthermore, based on the voltage drop of the internal power supply network of the specific integrated circuit By obtaining the voltage drop, a more accurate voltage drop can be obtained, which can be compared with the voltage drop used in the design stage to correct subsequent designs.

Description of the drawings

In order to explain the embodiments of the present application or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only This is an embodiment of the present application. For those of ordinary skill in the art, other drawings can be obtained based on the provided drawings without exerting creative efforts.

Figure 1 shows a schematic diagram of the power supply structure of an integrated circuit;

Figure 2 shows a schematic diagram of the power supply structure of the integrated circuit corresponding to the method for obtaining the voltage drop of the internal power supply network of the integrated circuit provided by the embodiment of the present application;

Figure 3 is an equivalent structural diagram of the power supply structure of the integrated circuit shown in Figure 2;

Figure 4 is a schematic flowchart of a method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by an embodiment of the present application;

Figure 5 shows a flow chart of the steps of obtaining the device voltage of the method for obtaining the internal power supply network voltage drop of an integrated circuit provided by the embodiment of the present application;

Figure 6 shows a flow chart of the voltage equivalent model construction steps of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application;

Figure 7 shows another flow chart of the voltage equivalent model construction steps of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application;

Figure 8 shows a flow chart of obtaining the voltage equivalent model parameters of the method for obtaining the voltage drop of the internal power supply network of the integrated circuit provided by the embodiment of the present application;

Figure 9 shows another flow chart of obtaining the voltage equivalent model parameters of the method for obtaining the internal power supply network voltage drop of an integrated circuit provided by the embodiment of the present application;

Figure 10 shows another flow chart of obtaining the device voltage in the method for obtaining the internal power supply network voltage drop of an integrated circuit provided by the embodiment of the present application;

Figure 11 shows a flow chart of the steps of obtaining the device voltage of the integrated circuit in the method for obtaining the voltage drop of the internal power supply network of the integrated circuit provided by the embodiment of the present application;

Figure 12 shows another schematic flowchart of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by an embodiment of the present application;

Figure 13 shows another schematic flowchart of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by an embodiment of the present application;

Figure 14 shows a structural block diagram of a voltage drop acquisition device for an integrated circuit internal power supply network provided by an embodiment of the present application;

Figure 15 shows a structural block diagram of the voltage acquisition module of the voltage drop acquisition device for the internal power supply network of the integrated circuit provided by the embodiment of the present application;

Figure 16 shows a structural block diagram of a building block of a voltage drop acquisition device for an internal power supply network of an integrated circuit provided by an embodiment of the present application.

Among them: 110-power supply; 111-internal power supply network; 112-internal components of integrated circuits; 113-power connection; 114-voltage acquisition device; 115-temperature sensor; 210-equivalent power supply; 220-equivalent power supply Internal resistance; 230-equivalent resistance of power supply connection; 240-voltage acquisition device; 250-equivalent resistance of internal components of integrated circuit; 260-equivalent resistance of internal power supply network.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.

The following describes the existing methods for obtaining the voltage drop of the internal power supply network of integrated circuits.

Please refer to Figure 1, which shows a schematic diagram of the power supply structure of the integrated circuit.

As shown in Figure 1, the power supply structure of the integrated circuit mainly includes a power supply 110, a power connection 113, an internal power network 111 and an internal device 112 of the integrated circuit.

Among them, the integrated circuit described in this article is a microelectronic device or component, a microstructure with certain circuit functions, which can be a chip;

The power supply 110 can be arranged on the board where the integrated circuit is located, and is connected to the integrated circuit through the power connection 113, specifically connected to the internal power network 111 of the integrated circuit. The power supply voltage of the power supply 110 can be controlled through the power supply control module;

The internal components of the integrated circuit 112 refer to the internal components of the integrated circuit that are in a power-consuming working state and are directly connected to different locations of the internal power network 111;

The power connection 113 can be understood as a general term for components that realize electrical connection such as connections, leads, and pins from the power supply 110 to the internal power network 111 .

The positive terminal of the power supply 110 is connected to the internal power network 111 through the power connection 113 . Therefore, the voltage drop from the power supply 120 to the internal device 112 of the integrated circuit can be approximately considered as the voltage drop from the power supply 120 to the internal power network 111. Specifically, it can be understood as the power equivalent resistance of the power supply 120 and the connection of the power connection 113. The voltage drop produced by the equivalent resistance of the internal power network of resistor and power network 111.

It is easy to understand that the devices inside the integrated circuit have one end connected to the internal power supply network 111 and one end connected to the ground. They can be regarded as being connected in parallel between the internal power supply network and the ground. Therefore, according to the parallel connection characteristics, the integrated circuit in the working state can be The internal resistance of the internal device 112 is equivalent to a resistor. Since the load of the integrated circuit changes dynamically when the integrated circuit is running, the equivalent resistance value of the internal device 112 of the integrated circuit in the working state also changes dynamically and can be considered as A variable resistor.

When the integrated circuit is powered on, the power supply 110 provides the power supply voltage A1. The power supply voltage A1 reaches the internal power network 111 from the power supply 110 through the power connection 113. The voltage A1 passes through the power equivalent resistance and the connection resistance of the power connection 113. The voltage divided by the equivalent resistance of the internal power network 111 is the voltage A2 of the internal power network 111. The internal device 112 of the integrated circuit is connected to the internal power network 111, so the voltage obtained by the internal device 112 of the integrated circuit is the voltage A2.

When the area of the internal power network 111 is large and the resistance difference from the power supply 120 to different locations of the internal power network 111 cannot be ignored, different locations of the internal power network 111 will have voltages A2 of different sizes, which are different from those at different locations of the internal power network 111 Connected devices will receive different voltages A2, so there will be multiple voltage drops A1-A2 of the internal power supply network of the integrated circuit.

When the load of the integrated circuit in working state suddenly increases, the required current suddenly increases, and the current flowing through the equivalent resistance of the power supply and the connection resistance suddenly increases, causing the voltage divided by the equivalent resistance of the power supply and the connection resistance to Also increases suddenly, and since the voltage of the power supply cannot change suddenly, the voltage provided by the internal power supply network 111 will drop sharply, that is, the voltage of the internal device 112 of the integrated circuit will drop sharply, resulting in a delay of the internal device 112 of the integrated circuit. The time will be extended, causing the setup time of the registers on the critical path to be unable to be met, causing the entire integrated circuit to fail.

In order to avoid the above situation, it is necessary to ensure that the voltage of the internal components 112 of the integrated circuit meets the requirements of the register setup time even when the number of internal components 112 of the integrated circuit suddenly increases. To this end, the following two methods can be used :

Option one is to estimate through simulation and estimate before the integrated circuit is taped out.

Solution 2: By connecting the internal power supply network 111 to the pins of the integrated circuit, the voltage of the internal power supply network 111 is measured in real time when the integrated circuit is working to understand the voltage of the internal power supply network 111 .

However, for the first method, the accuracy of the estimation depends on the provided simulation waveform. In order to ensure the realization of the integrated circuit function, the worst case is generally used for estimation to guide the design of the power network, so the estimation error is large. And it cannot be estimated in real time; for the second method, external equipment (such as a multimeter) needs to be used for measurement, and because the measurement results cannot be obtained by the power supply control module in time, the measured results cannot be used in real time. The adjustment of the supply voltage of the power supply 110 will also affect the packaging of the integrated circuit due to the need to additionally set the pins of the integrated circuit. In order to obtain more accurate measurement results, when the number of pins needs to be increased, it will also cause design problems. Increased difficulty and cost.

It can be seen that the above two voltage drop acquisition methods are difficult to achieve real-time control of the power supply to avoid functional failure of the integrated circuit. That is, the existing technology cannot achieve real-time acquisition of an integrated circuit that can be used to control the power supply 110 in real time. Internal power network voltage drop.

In order to solve the aforementioned problems, embodiments of the present application provide a method and related devices for obtaining the voltage drop of the internal power supply network of an integrated circuit, so as to obtain the voltage drop of the internal power supply network of the integrated circuit that can be used to control the power supply in real time.

For the convenience of understanding, the integrated circuit of the method for obtaining the voltage drop of the internal power supply network of the integrated circuit provided by the embodiment of the present application is first described.

Please refer to FIG. 2 , which shows a schematic diagram of the power supply structure of the integrated circuit corresponding to the method for obtaining the voltage drop of the internal power supply network of the integrated circuit provided by the embodiment of the present application.

As shown in Figure 2, the power supply structure of the integrated circuit corresponding to the method for obtaining the voltage drop of the internal power supply network of the integrated circuit provided by the embodiment of the present application includes: power supply 110, power connection 113, internal power network 111, and internal devices of the integrated circuit. 112 and a voltage acquisition device 114, wherein the integrated circuit at least includes an internal power network 111, an integrated circuit internal device 112 and a voltage acquisition device 114.

Among them, for the specific contents of the power supply 110, the power connection 113, the internal power network 111 and the internal components of the integrated circuit 112, please refer to the description of the relevant components in Figure 1 and will not be repeated here.

The voltage acquisition device 114 refers to a device used to acquire voltage. As shown in Figure 2, it is arranged inside the integrated circuit and is connected in parallel with the internal device 112 of the integrated circuit between the internal power network 111 and the ground. Therefore, the voltage The device voltage of the acquisition device 114 can be considered as the voltage of the device 112 inside the integrated circuit. Based on the above, it can be understood that the voltage of the internal device 112 of the integrated circuit is the voltage of the internal power network 111 .

It should be noted that when the internal power supply network 111 is large and the equivalent internal resistance of the power supply network at different locations cannot be ignored, the device voltage of the voltage acquisition device 114 can only be considered as the difference between the voltage acquisition device 114 and the internal power supply network 111 The local voltage of the internal power network 111 at and around the connection.

Of course, the voltage acquisition device 114 may include a device that can directly acquire the voltage value, or it may acquire a device that can indirectly reflect the voltage value, that is, a device that has a mutual mapping relationship between the acquired device value and the voltage value. The corresponding relationship between the reading value (ie, the voltage equivalent value) of the voltage acquisition device 114 and the voltage value needs to be constructed in advance, so that when the reading value of the voltage acquisition device 114 is specifically obtained, the corresponding voltage value can be obtained.

In a specific implementation, the voltage acquisition device 114 may include a power supply monitor (PSM). The power supply monitor includes a ring oscillator composed of an inverter and a counter. The ring oscillator will operate according to the current integrated circuit. Different PVT (process, voltage, temperature) are generated at different frequency clocks. The counter can count the generated frequency clock, and the size of the count value (PSM value) per unit time can reflect the voltage of the integrated circuit under the temperature and process. situation, that is, by obtaining the PSM value, the voltage value of the internal device 112 of the integrated circuit at the corresponding temperature can be understood.

Specifically, the reasons why the PSM value of the power supply monitor (PSM) can reflect the voltage of the integrated circuit are as follows:

The charge and discharge of the capacitor in the inverter of the ring oscillator will be affected by the voltage. The higher the voltage, the faster the capacitor charges and discharges. The faster the capacitor charges and discharges, the shorter the time for the inverter to reverse direction, so the ring oscillator’s The higher the oscillation frequency, the shorter the cycle of one cycle. By recording the number of cycles per unit time through the counter in the PSM, the count value of the counter, that is, the PSM value, can be obtained, and the PSM value can reflect the voltage.

It is easy to understand that in order to accurately obtain the voltage on both sides of the internal device 112 of the integrated circuit, the power monitor can be set to be non-conductive. Of course, non-conductive as described in this article means that the resistance is extremely large and the current flowing through it is weak and can be ignored. Can be considered non-conductive.

Of course, in order to obtain the voltage value based on the PSM value, it is also necessary to establish the mapping relationship between the PSM value and the voltage value of the internal device 112 of the integrated circuit in advance. To facilitate understanding, resistance equivalence of each component is performed. Please refer to Figure 3. Figure 3 is The equivalent structure diagram of the power supply structure of the integrated circuit shown in Figure 2.

As shown in Figure 3, the power supply structure of the integrated circuit, after resistor equivalence, can include: equivalent power supply 210, equivalent power supply internal resistance 220, equivalent power supply resistance 230, voltage acquisition device 240, internal resistance of the integrated circuit device equivalent resistance 250 and internal power network equivalent resistance 260.

When the integrated circuit is running, the voltage on both sides of the voltage acquisition device 240 is the voltage of the equivalent resistance 250 of the parallel integrated circuit internal devices, that is, the device voltage; but when the integrated circuit is in a no-load state, that is, the internal devices of each integrated circuit When both 112 and 112 are in the non-working state (which can be controlled by the gate control circuit), the equivalent resistance of the internal device of the integrated circuit 250 and the equivalent resistance of the voltage acquisition device 240 are considered to be open circuits. There is no current in the power supply structure of the integrated circuit, so the voltage The device voltage of the acquisition device 240 is equal to the voltage of the equivalent power supply 210, and the voltage of the equivalent power supply 210 can be directly known, and the reading value of the voltage acquisition device 240 is that the voltage across it is the voltage of the equivalent power supply 210 The reading value under is also the reading value under the device voltage, so that the mapping relationship between the device voltage and the reading value of the voltage acquisition device 240 can be obtained.

When the voltage acquisition device 240 is a PSM, the mapping relationship between the device voltage and the PSM value can be obtained, so that when the integrated circuit has a workload, the device voltage can be obtained based on the PSM value of the PSM.

In addition, when the integrated circuit is large, in order to supply power to the internal devices 112 of each integrated circuit, the internal power supply network 111 is also large. The resistance of the internal power supply network 111 will cause different voltage drops at different locations. In order to improve the obtained The accuracy of the voltage drop, in a specific implementation, the number of voltage acquisition devices 114 of the integrated circuit provided by the embodiment of the present application includes at least 2, which are connected in parallel to the internal power supply network of the integrated circuit, and each of the The voltage acquisition devices are respectively connected to different positions of the internal power supply network of the integrated circuit, thereby achieving the acquisition of voltage drops at different positions of the internal power supply network 111 .

The main factors that affect the working status of integrated circuits include process, voltage and temperature. The process has been determined after the integrated circuit is made. Therefore, during testing, in order to obtain a more accurate voltage equivalent model, the voltage of the internal devices of the integrated circuit can be measured more accurately. It is estimated that the influence of temperature also needs to be considered; therefore, in a specific implementation, the integrated circuit provided by the embodiment of the present application may also include a temperature sensor 115 connected to the internal power supply network 111 and suitable for detecting the The voltage captures the device ambient temperature of device 114 .

Of course, in order to detect the device environment temperature of the voltage acquisition device 114, the temperature sensor 115 needs to be disposed at a position corresponding to the voltage acquisition device 114. If multiple voltage acquisition devices 114 are provided, multiple temperature sensors may also be disposed.

Based on the above structure, the voltage acquisition method of the internal power supply network of the integrated circuit provided by the embodiment of the present application is described in detail below:

Please refer to FIG. 4 in conjunction with FIG. 2. FIG. 4 is a schematic flowchart of a voltage acquisition method for a voltage drop in an integrated circuit's internal power supply network provided by an embodiment of the present application.

As shown in Figure 4, the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application may include the following steps:

In step S310, when the integrated circuit has a workload, the supply voltage of the integrated circuit and the device voltage of the voltage acquisition device are obtained.

Of course, based on the foregoing structural description, the voltage acquisition device 114 is provided in the integrated circuit and can be considered to be connected in parallel with the internal device 112 of the integrated circuit.

The power supply voltage of the integrated circuit refers to the voltage of the power supply 110 of the integrated circuit, which can be obtained directly. Since the voltage of the power supply is controlled by the power supply control module, the power supply voltage can be directly obtained based on the power supply control module.

The voltage acquisition device 114 is disposed within the integrated circuit, that is, the voltage acquisition device 114 is part of the integrated circuit and is connected in parallel with other internal devices of the integrated circuit. Therefore, the device voltage of the voltage acquisition device 114 is the internal device 112 of the integrated circuit. voltage across both ends.

It is easy to understand that when the integrated circuit has a workload, the power supply voltage and voltage of the integrated circuit are obtained from the device voltage of the device. The obtained power supply voltage and device voltage are the real-time power supply voltage and device voltage during the operation of the integrated circuit.

When the voltage acquisition device 114 is a device that can directly read the voltage value, then by reading the reading value of the voltage acquisition device 114, the device voltage can be obtained; if the voltage acquisition device 114 is not a device that can directly read the voltage value, , then what is obtained through the voltage acquisition device 114 is the voltage equivalent value, and further processing is required to obtain the device voltage.

In step S320, the voltage difference between the power supply voltage and the device voltage is obtained to obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit.

After obtaining the power supply voltage and the device voltage, obtain the difference between the power supply voltage and the device voltage, and obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit.

In this way, the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application can obtain the voltage drop of the internal power supply network of the integrated circuit that can realize real-time control of the power supply, and can thereby adjust the available voltage in real time according to the voltage drop. The voltage of the variable resistor ensures that the voltage can be stabilized within the desired range. Furthermore, based on the acquisition of the voltage drop of the internal power supply network of the specific integrated circuit, a more accurate voltage drop can be obtained, which can be used in the design phase. The voltage drop is compared to correct subsequent designs.

Specifically, in a specific implementation, when the voltage acquisition device 114 acquires a voltage equivalent value, in order to acquire the device voltage, please refer to Figure 5. Figure 5 is an integrated circuit internal power supply provided by an embodiment of the present application. A flow chart of the steps of obtaining the device voltage of the network voltage drop obtaining method.

As shown in Figure 5, the steps of obtaining the device voltage in the method for obtaining the internal power supply network voltage drop of an integrated circuit provided by the embodiment of the present application may include:

In step S311, obtain the voltage equivalent value of the voltage acquisition device of the integrated circuit.

Since the voltage acquisition device 114 cannot directly acquire the voltage value, what is directly acquired based on the voltage acquisition device 114 is the voltage equivalent value. Of course, there is a corresponding mapping relationship between the voltage equivalent value and the device voltage.

For example: when the voltage acquisition device 114 is a PSM, the voltage equivalent value is the aforementioned PSM value.

When the internal device 112 of the integrated circuit is working, by using PSM to obtain the PSM value, the aforementioned voltage equivalent value can be obtained.

In step S312, the device voltage is obtained according to the voltage equivalent value and the pre-constructed voltage equivalent model of the voltage acquisition device.

It is easy to understand that the voltage equivalent model refers to the model of the equivalent relationship between the voltage equivalent value and the device voltage; the pre-constructed voltage equivalent model described in this article refers to the model that needs to be based on the voltage equivalent The value is constructed before obtaining the device voltage. Specifically, it can be constructed before obtaining the voltage equivalent value, such as when the integrated circuit is powered on, or it can be constructed at the same time as the voltage equivalent value.

After obtaining the voltage equivalent value and voltage equivalent model, based on the corresponding relationship, the device voltage can be obtained.

It can be seen that by using the voltage equivalent value and the voltage equivalent model, the device voltage can be easily obtained based on the voltage equivalent value, and the device voltage can be obtained, and the restrictions on the voltage acquisition device 114 can be relaxed, as long as the voltage can be obtained Any device that obtains the mapping relationship between the reading value of the device 114 and the device voltage can be used as the voltage acquisition device 114, which increases the range of options and also provides the possibility to select devices with higher accuracy and lower cost. , which can improve the accuracy of voltage drop acquisition and reduce the cost of integrated circuits.

However, as mentioned above, if a voltage acquisition device 114 capable of acquiring voltage equivalent values is used, a voltage equivalent model needs to be constructed in advance. To this end, in a specific implementation, the power supply can be supplied through pre-stored corresponding test tests. voltage and test voltage equivalent values to construct a voltage equivalent model.

Referring to FIG. 6 , FIG. 6 shows a flow chart of the voltage equivalent model construction steps of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by an embodiment of the present application.

As shown in Figure 6, the steps to build a voltage equivalent model may include:

Step S410: Obtain the pre-stored test supply voltages of the integrated circuit when the integrated circuit has no working load and the test voltage equivalent values of the voltage acquisition devices corresponding to the test supply voltages.

The corresponding test supply voltage and test voltage equivalent values are obtained in advance and stored. When it is necessary to build a voltage equivalent model, just read it out and use it.

In some embodiments, the corresponding test supply voltage and test voltage equivalent value may be stored in the one-time programmable circuit. The one-time programmable circuit can well preserve and protect the obtained voltage equivalent model parameters, and will not damage the parameter data due to improper operation, thus improving the security of the data.

Based on the foregoing description of the integrated circuit structure, it can be known that when the integrated circuit is in a non-working state, the supply voltage is equal to the device voltage, so the device voltage can be obtained through the supply voltage, and the voltage can be read to obtain the read value of the device 114 (i.e., the voltage equivalent value), so that the device voltage and voltage equivalent value of the corresponding device voltage can be obtained.

Since the above process needs to be obtained when the integrated circuit is in a no-load state, for the convenience of distinction, they are called test supply voltage and test voltage equivalent value respectively.

In addition, since the ultimate goal of testing the supply voltage and test voltage equivalent values is to construct a voltage equivalent model, and only one set of test supply voltage and test voltage equivalent values cannot form a model, therefore, it is necessary to obtain multiple sets of respectively. The corresponding test supply voltage corresponds to the equivalent value of the test voltage, and the specific quantity can be determined as needed.

For example: three sets of voltages (V ₀ , V ₁ , V ₂ ) can be selected to obtain the test supply voltage. The specific acquisition process is as follows:

First, adjust all the integrated circuits to be in a no-load state, and determine the test power supply voltage value V ₀ . Specifically, it can be adjusted through the power supply control module to obtain the test voltage equivalent value P ₀ of the voltage acquisition device 114 , and then adjust the test power supply voltage value. V ₁ , obtain the test voltage equivalent value P ₁ of the voltage acquisition device 114 , finally adjust the test supply voltage value V ₂ , obtain the test voltage equivalent value P ₂ of the voltage acquisition device 114 , and obtain three sets of corresponding test supply voltages and test Voltage equivalent values, namely (V ₀ , P ₀ ), (V ₁ , P ₁ ), (V ₂ , P ₂ ).

The test voltage equivalent values (P ₀ , P ₁ , P ₂ ) under each test voltage are measured respectively, and the mapping relationship between the three groups of test supply voltages and the three groups of test voltage equivalent values is obtained, that is, (V ₀ , P ₀ ), (V ₁ , P ₁ ), (V ₂ , P ₂ ).

Specifically, in one embodiment, V ₀ , V ₁ and V ₂ may be respectively close to the maximum voltage, the minimum voltage at which the integrated circuit can operate normally, and the optimal voltage at which the integrated circuit has the highest performance.

Of course, in other embodiments, other values can also be selected to obtain the corresponding test voltage equivalent value.

After obtaining the corresponding test supply voltage correspondence and test voltage equivalent value of each group, they are stored in the corresponding storage unit. When it is necessary to construct a voltage equivalent model, just read it from it.

Step S420: Construct the voltage equivalent model based on the corresponding test supply voltages and each test voltage equivalent value.

In one embodiment, curve fitting can be performed using each of the corresponding test supply voltages and each of the test voltage equivalent values as independent variables and dependent variables to obtain a fitting curve and obtain the voltage equivalent value. Model.

It can be seen that by pre-stored corresponding test supply voltages and test voltage equivalent values, the voltage equivalent model can be obtained directly, which provides a basis for subsequent acquisition of voltage drops.

In another specific implementation, the voltage equivalent model can also be constructed through pre-stored voltage equivalent model parameters.

Specifically, please refer to FIG. 7 , which shows another flowchart of the voltage equivalent model building steps of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by an embodiment of the present application.

As shown in Figure 7, in a specific implementation, the steps of constructing the voltage equivalent model may include:

Step S510: Obtain pre-stored voltage equivalent model parameters.

It should be noted that the voltage equivalent model parameters described in this article refer to parameters indicating the voltage equivalent model type and parameters required to construct the voltage equivalent model.

For example: when the voltage equivalent model is a quadratic polynomial, the voltage equivalent model parameters include parameters representing the quadratic polynomial (y=ax ² +bx+c), and each parameter in the quadratic polynomial: a, b, c parameter value.

It is easy to understand that the voltage equivalent model parameters are obtained and stored in advance, and when it is necessary to construct the voltage equivalent model, just read them out and use them.

In some embodiments, the voltage equivalent model parameters may also be stored in the one-time programmable circuit. The one-time programmable circuit can well preserve and protect the obtained voltage equivalent model parameters, and will not destroy the parameter data due to improper operation, thus improving the safety of the voltage equivalent model parameters.

In other embodiments, the voltage equivalent model parameters can also be stored in a general-purpose storage unit of the integrated circuit.

Step S520: Construct the voltage equivalent model according to the voltage equivalent model parameters.

After obtaining the voltage equivalent model parameters, the corresponding voltage equivalent model can be constructed based on the voltage equivalent model parameters.

For example, in the aforementioned case: however, the parameters representing the quadratic polynomial are obtained, indicating that the voltage equivalent model is a quadratic polynomial, and then the parameter values of each position in the quadratic polynomial are obtained, and the voltage equivalent model can be directly constructed.

It can be seen that by constructing a voltage equivalent model through voltage equivalent model parameters, on the one hand, less data needs to be stored, which reduces the storage space occupied; on the other hand, the model can also be easily constructed with a small amount of calculations. .

Of course, the voltage equivalent model parameters need to be obtained in advance. In order to obtain the voltage equivalent parameters, in a specific implementation manner, the embodiment of the present application provides a step for obtaining the voltage equivalent parameters. Please refer to Figure 8. Figure 8 A flow chart of obtaining the voltage equivalent model parameters of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application is shown.

As shown in Figure 8, the steps for obtaining voltage equivalent model parameters may include:

In step S610, when the integrated circuit has no working load, each test supply voltage of the integrated circuit and each test voltage equivalent value of the voltage acquisition device corresponding to each of the test supply voltages are obtained.

For the specific content of step S610, please refer to the relevant description of step S410 shown in Figure 6, which will not be described again here.

In step S620, the voltage equivalent model parameters are obtained according to the mapping relationship between each test supply voltage and each test voltage equivalent value.

According to the obtained corresponding test supply voltage and test voltage equivalent value, curve fitting is performed to obtain the fitting function. It is easy to understand that the fitting function is the voltage equivalent model, and the parameters of the fitting function are the voltage equivalent model. parameters.

Extract the voltage equivalent model parameters and store the obtained voltage equivalent model parameters in the storage unit of the integrated circuit.

In this way, by obtaining each test supply voltage of the integrated circuit and the equivalent value of each test voltage corresponding to each test supply voltage when the integrated circuit has no working load, the voltage equivalent model can be easily realized. The acquisition of parameters meets storage requirements and subsequent use requirements.

In another specific implementation, in order to improve the accuracy of the obtained voltage equivalent model parameters and the subsequent accuracy of obtaining the voltage drop, embodiments of the present application also provide a method of obtaining the voltage equivalent model parameters, please Parameter Figure 9 . Figure 9 shows another flow chart of obtaining the voltage equivalent model parameters of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application.

As shown in Figure 9, the steps for obtaining voltage equivalent model parameters may include:

In step S710, when the integrated circuit has no working load, each test supply voltage of the integrated circuit and each test voltage of the voltage acquisition device corresponding to each of the test supply voltages are obtained at different test temperatures. Equivalent value.

It should be noted that the main factors that affect the working status of integrated circuits include process, voltage and temperature. The process has been determined after the integrated circuit is completed. Therefore, during testing, in order to obtain a more accurate voltage equivalent model, and thereby more accurately analyze the integrated circuit To estimate the voltage of internal devices, the effect of temperature also needs to be considered.

For the specific content of step S710, please refer to the description of step S410 shown in Figure 6. Of course, in this example, the temperature factor is also considered during the test. The test is performed at different test temperatures to obtain all the corresponding values at different temperatures. The test supply voltage and the equivalent value of the test voltage.

In some embodiments, the orthogonal test method can be used for measurement. The explanation is still based on the aforementioned example of selecting three sets of voltages (V ₀ , V ₁ , V ₂ ). It is easy to understand that at this time, three sets of voltages need to be considered at the same time. Test temperature status (T ₀ , T ₁ , T ₂ ):

First, fix the test temperature T ₀ , adjust the test power supply voltage according to the previous steps, and obtain the corresponding test voltage equivalent values P ₀₀ , P ₀₁ , P ₀₂ , and then continuously adjust the temperature to obtain nine sets of corresponding test temperatures, test power supply voltages and all The equivalent value of the above test voltage, specifically (T ₀ , V ₀ , P ₀₀ ), (T ₀ , V ₀ , P ₀₁ ), (T ₀ , V ₂ , P ₀₂ ), (T ₁ , V ₀ , P ₁₀ ), (T ₁ , V ₁ , P ₁₁ ), (T ₁ , V ₁ , P ₁₂ ), (T ₂ , V ₀ , P ₂₀ ), (T ₂ , V ₁ , P ₂₁ ), (T ₂ , V ₂ , P ₂₂ )

Of course, in one embodiment, the test temperatures T ₀ , T ₁ , and T ₂ can be selected to be temperatures close to the highest temperature, the lowest voltage at which the integrated circuit may operate, and the optimal temperature at which the integrated circuit has the highest performance, respectively. In other embodiments, other temperatures may be selected.

In step S720, according to the mapping relationship between each of the test supply voltages and each of the test voltage equivalent values at different test temperatures, obtain each of the voltage equivalent model parameters at different test temperatures.

According to the corresponding test supply voltage and test voltage equivalent values obtained at different test temperatures, curve fitting is performed to obtain a fitting function equal to the number of test temperatures. Because there are multiple test temperatures, it is easy to understand that , a voltage equivalent model will be obtained for each temperature, and multiple voltage equivalent models will be obtained in total. The parameters of each fitting function are the parameters of each voltage equivalent model.

Extract the parameters of each voltage equivalent model respectively, obtain each of the voltage equivalent model parameters at different test temperatures, and store the obtained voltage equivalent model parameters at different temperatures together with the corresponding temperatures in the storage unit of the integrated circuit.

In this way, by limiting the test temperature, a more accurate voltage equivalent model can be constructed, and a more accurate voltage drop of the internal power supply network of the integrated circuit can be obtained.

Of course, when each of the voltage equivalent model parameters at different test temperatures is stored, voltage equivalent models at different temperatures can be constructed.

Specifically, step S520, the step of constructing the voltage equivalent model according to the voltage equivalent model parameters, may include:

According to the voltage equivalent model parameters at different test temperatures, each voltage equivalent model corresponding to each test temperature is constructed.

Of course, in the embodiment where the pre-stored corresponding test supply voltage and test voltage equivalent value are directly obtained, the corresponding test supply voltage and test voltage equivalent value under different test temperatures can also be stored, and then different test values are obtained. Voltage equivalent model at temperature.

At this time, in order to improve the accuracy of the obtained device voltage and voltage drop while constructing voltage equivalent models at different temperatures, embodiments of the present application also provide a device voltage acquisition method. Please refer to Figure 10. FIG. 10 shows another flowchart of obtaining the device voltage in the method for obtaining the internal power supply network voltage drop of an integrated circuit provided by an embodiment of the present application.

As shown in Figure 10, the steps of obtaining the device voltage in the method for obtaining the internal power supply network voltage drop of an integrated circuit provided by the embodiment of the present application include:

In step S810, obtain the voltage equivalent value of the voltage acquisition device of the integrated circuit and the device environment temperature of the voltage acquisition device.

Specifically, in order to obtain the device environment temperature of the voltage acquisition device, a temperature sensor can be integrated in the integrated circuit and connected near the voltage acquisition device to obtain the device environment temperature.

It is easy to understand that the voltage equivalent value of the voltage acquisition device of the integrated circuit and the device environment temperature of the voltage acquisition device are the voltage equivalent values and the device environment temperature of the integrated circuit during normal operation. At this time, the integrated circuit is in a certain state. load status.

In step S820, the device voltage is obtained according to the voltage equivalent value, the device ambient temperature and each of the voltage equivalent models.

Specifically, the device voltage is obtained according to the voltage equivalent value, the device ambient temperature and each of the voltage equivalent models. The corresponding voltage equivalent model can be obtained based on the device ambient temperature, and then combined with the voltage equivalent value Get the device voltage.

In this way, when constructing voltage equivalent models at different temperatures, an appropriate voltage equivalent model can be selected to obtain the device voltage, thereby improving the accuracy of the obtained device voltage and voltage drop.

Since it is difficult to achieve one-to-one correspondence between the device ambient temperature and the temperature corresponding to the voltage equivalent model, in order to obtain the device voltage of each device ambient temperature under the limited voltage equivalent model, in a specific implementation, as As shown in Figure 11, Figure 11 shows a flow chart of the steps of obtaining the device voltage of the integrated circuit, including:

In step S821, the temperature interval between each of the test temperatures is obtained.

The temperature range refers to the temperature range formed by two adjacent test temperatures, and the two adjacent test temperatures are the minimum and maximum temperatures of the formed temperature range respectively.

For example, there are three sets of test temperatures (T ₀ , T ₁ , T ₂ ), and the temperature relationship among the three is T ₀ <T ₁ <T ₂ , then the above three test temperatures form a total of two temperature intervals, which are [T ₀ , T ₁ ] and [T ₁ , T ₂ ], where the temperatures of each voltage equivalent model corresponding to the interval [T ₀ , T ₁ ] are T ₀ and T ₁ , or the endpoint temperatures of the interval.

In step S822, the corresponding temperature interval is determined according to the ambient temperature of the device, the current temperature interval is obtained, and the temperature-voltage equivalent model in each of the voltage equivalent models corresponding to the current temperature interval is obtained.

The temperature interval, that is, the current temperature interval, is determined based on the measured ambient temperature of the device, and each of the voltage equivalent models corresponding to the current temperature interval is further obtained to obtain a temperature-voltage equivalent model.

For example: T _x is between T ₀ and T ₁ , then obtain the voltage equivalent models corresponding to T ₀ and T ₁ respectively, and obtain the temperature and voltage equivalent models.

It is easy to understand that if the ambient temperature during the period is exactly the endpoint temperature of the two temperature intervals, that is, exactly equal to a test temperature, you can also only obtain the voltage equivalent model corresponding to the test temperature; of course, you can also obtain the two temperature voltage equivalents Model.

In step S823, the interval endpoint device voltage is obtained according to the voltage equivalent value and each of the temperature and voltage equivalent models.

Based on the voltage equivalent value, the corresponding device voltage value in the temperature-voltage equivalent model can be obtained, thereby obtaining the interval endpoint device voltage.

The interval endpoint device voltage refers to the device voltage corresponding to the obtained voltage equivalent value of the temperature-voltage equivalent model of the two endpoint temperatures constituting the obtained temperature interval.

Combined with the previous case, if the temperature and voltage equivalent model is the temperature and voltage equivalent model at temperature T ₀ and the temperature and voltage equivalent model at T ₁ , then the voltage equivalent model is based on the device voltage and voltage equivalent value. A continuous function of variables and independent variables, so according to the voltage equivalent value substituted into the function, the corresponding device voltage V 0 can be obtained in the voltage equivalent model under T ₀ and the corresponding device voltage V ₀ can be obtained in the voltage equivalent model under T ₁ The device voltage V ₁ , the V ₀ and V ₁ are the device voltages at the end points of the interval [T ₀ , T ₁ ].

In step S824, the device voltage is obtained based on the device environment temperature, the endpoint temperature of the current temperature interval, and the endpoint device voltage of the interval.

By determining the device voltage at the endpoint of the interval, the device voltage corresponding to the voltage equivalent value is estimated. When estimating, the device ambient temperature and the endpoint temperature of the current temperature interval need to be used. For example, when the device ambient temperature is closer to the higher endpoint temperature, the estimated device voltage will be closer to the endpoint device voltage of the interval corresponding to the higher endpoint temperature.

In some embodiments, the estimation can be performed by a linear interpolation method, and the device voltage at the ambient temperature of the device is obtained according to the linear relationship between temperature and device voltage, thereby obtaining a device voltage with higher accuracy.

In other embodiments, estimation can also be performed by other methods, such as averaging.

This way, more accurate device voltages can be obtained even when testing at less temperature.

Of course, when the integrated circuit is larger, in order to supply power to the internal devices 112 of each integrated circuit, the internal power supply network 111 is also larger. The resistance of the internal power supply network 111 will cause different voltage drops at different locations. In order to increase the obtained voltage The accuracy of the voltage drop is realized, and the control of the power supply 110 is implemented to ensure that the internal components of the integrated circuit can operate normally. The embodiment of the present application also provides a method for obtaining the voltage drop of the internal power supply network of the integrated circuit. Please refer to Figure 12. Figure 12 shows Another schematic flow diagram of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application is shown;

As shown in Figure 12, the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application includes:

In step S1010, when the integrated circuit has a workload, the supply voltage of the integrated circuit and the voltage of each integrated circuit are obtained to obtain the device voltage of the device.

When the integrated circuit is larger, the internal power supply network of the integrated circuit will also be larger, causing the equivalent resistance between different positions of the internal power supply network to be non-negligible. At this time, the resistance from the power supply to the different positions of the internal power supply network is different. Internal devices at different locations on the power network have different voltages.

The voltage acquisition device can only measure the voltage at its connection with the internal power supply network. Therefore, multiple voltage acquisition devices are required, respectively connected to different positions of the internal power supply network of the integrated circuit, to obtain the presence of the integrated circuit. When loaded, the supply voltage of the integrated circuit and the voltage of each of the integrated circuits obtain the device voltage of the device.

In step S1020, the voltage difference between the power supply voltage and each of the device voltages is obtained, and the voltage drops from the power supply to different positions of the internal power supply network of the integrated circuit are obtained.

After obtaining the voltage of each device in step S1010, the difference between the voltage of each device and the power supply voltage is obtained to obtain each voltage drop from the power supply to the internal device of the integrated circuit. The power supply control module is controlled based on each voltage drop to ensure the normal operation of the integrated circuit as much as possible.

In this way, when obtaining the voltage drop, real-time voltage drops can be estimated at multiple points inside the chip at the same time, and the voltage drops at different points can be obtained. By adjusting the supply voltage, the operation of the internal devices of the integrated circuit at each voltage drop can be ensured. Maximize the needs of internal device operation of integrated circuits.

Further, please refer to FIG. 13 , which shows another schematic flowchart of the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by an embodiment of the present application.

As shown in Figure 13, the method for obtaining the voltage drop of the internal power supply network of an integrated circuit provided by the embodiment of the present application includes:

In step S910, when the integrated circuit has a workload, the minimum value of the supply voltage of the integrated circuit and the voltage acquisition device of each integrated circuit is obtained.

When the integrated circuit is larger, the internal power supply network of the integrated circuit will also be larger, causing the equivalent resistance between different positions of the internal power supply network to be non-negligible. At this time, the resistance from the power supply to the different positions of the internal power supply network is different. Internal devices at different locations on the power network have different voltages. At this time, only by ensuring that the internal device with the smallest voltage can still work normally can the integrated circuit be guaranteed to work as normally as possible.

The voltage acquisition device can only measure the voltage at its connection with the internal power supply network. Therefore, multiple voltage acquisition devices are required, respectively connected to different positions of the internal power supply network of the integrated circuit, to obtain the presence of the integrated circuit. At load, the supply voltage of the integrated circuit and the voltage of each integrated circuit obtain the minimum value of the device voltage of the device.

In step S920, the voltage difference between the minimum value of the power supply voltage and the device voltage is obtained to obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit.

After obtaining the minimum device voltage in step S910, the difference with the power supply voltage is obtained to obtain the maximum voltage drop from the power supply to the internal device of the integrated circuit. The power supply control module is controlled based on the maximum voltage drop to ensure that the integrated circuit is as normal as possible. Work.

In this way, when obtaining the voltage drop, the minimum device voltage is used as the device voltage, and the obtained voltage drop is the maximum voltage drop. By adjusting the supply voltage, the operation of the internal devices of the integrated circuit under the maximum voltage drop can be ensured, which can satisfy the requirements to the greatest extent. Requirements for the operation of internal components of integrated circuits.

The above describes multiple embodiment solutions provided by the embodiments of the present application. The optional methods introduced in each embodiment solution can be combined and cross-referenced with each other without conflict, thereby extending a variety of possible embodiment solutions. These can be considered as embodiments disclosed and disclosed in the embodiments of this application.

Embodiments of the present application also provide a voltage drop acquisition device for the internal power supply network of an integrated circuit. This device can be considered as a functional module required by the integrated circuit to implement the voltage drop acquisition method for the internal power supply network of the integrated circuit provided by the embodiment of the present application. The device content described below may be mutually referenced with the method content described above.

Figure 14 shows a structural block diagram of a voltage drop acquisition device for an integrated circuit internal power supply network provided by an embodiment of the present application; Figure 15 shows a voltage acquisition device for a voltage drop acquisition of an integrated circuit internal power supply network provided by an embodiment of the present application. Structural block diagram of the module; Figure 16 shows a structural block diagram of the building module of the voltage drop acquisition device for the internal power supply network of the integrated circuit provided by the embodiment of the present application.

As shown in Figure 14, Figure 15 and Figure 16, the voltage drop acquisition device of the internal power supply network of the integrated circuit may include:

The voltage acquisition module 1010 is adapted to acquire the power supply voltage of the integrated circuit and the device voltage of the voltage acquisition device of the integrated circuit when there is a workload on the integrated circuit, and the voltage acquisition device is provided on the integrated circuit.

The voltage drop calculation module 1020 is adapted to obtain the voltage difference between the power supply voltage and the device voltage, and obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit.

In this way, the device for obtaining the voltage drop of the integrated circuit's internal power supply network provided by the embodiment of the present application can obtain the voltage drop of the integrated circuit's internal power supply network that can realize real-time control of the power supply, and can then adjust it in real time according to the voltage drop. The voltage of the variable resistor ensures that the voltage can be stabilized within the desired range. Furthermore, based on the acquisition of the voltage drop of the internal power supply network of the specific integrated circuit, a more accurate voltage drop can be obtained, which can be used in the design stage. The voltage drop is compared to correct the subsequent design.

In some embodiments, the voltage acquisition module 1010 includes:

The voltage equivalent value acquisition unit 1011 is adapted to acquire the voltage equivalent value of the voltage acquisition device of the integrated circuit.

The voltage equivalent value conversion unit 1012 is adapted to obtain the device voltage according to the voltage equivalent value and a pre-constructed voltage equivalent model of the voltage acquisition device.

In this way, using the voltage equivalent value and the voltage equivalent model, the device voltage can be easily obtained based on the voltage equivalent value, and the device voltage can be obtained, and the restrictions on the voltage acquisition device can be relaxed, as long as the voltage acquisition device can be obtained Devices that map the relationship between reading values and device voltages can be used as voltage acquisition devices, which increases the range of options. At the same time, it also provides the possibility to select devices with higher accuracy and lower cost, which can increase the voltage drop. Obtain accuracy and reduce the cost of integrated circuits.

In some embodiments, the voltage drop acquisition device of the integrated circuit's internal power supply network also includes: a building module 1030 of the voltage equivalent model, and the building module 1030 includes:

The model parameter acquisition unit 1031 is adapted to acquire pre-stored voltage equivalent model parameters.

The model building unit 1032 is adapted to build the voltage equivalent model according to the voltage equivalent model parameters.

In some embodiments, the voltage equivalent model parameters are obtained through a parameter acquisition module, which includes:

The test supply voltage and test voltage equivalent value acquisition submodule is suitable for obtaining each test supply voltage of the integrated circuit and the voltage acquisition device corresponding to each test supply voltage when the integrated circuit has no working load. Equivalent value of each test voltage.

The voltage equivalent model parameter acquisition sub-module is adapted to obtain the voltage equivalent model parameters according to the mapping relationship between each of the test supply voltages and each of the test voltage equivalent values.

In some embodiments, the test supply voltage and test voltage equivalent value acquisition unit is adapted to obtain the test supply voltage of the integrated circuit and the test supply voltage corresponding to each test supply voltage when the integrated circuit has no working load. The voltage obtains the equivalent value of each test voltage of the device, including:

Obtaining the test voltage equivalent values of each test voltage of the integrated circuit and the voltage corresponding to each of the test supply voltages at different test temperatures when the integrated circuit has no working load;

The voltage equivalent model parameter acquisition unit is adapted to obtain the voltage equivalent model parameters according to the mapping relationship between each of the test supply voltages and each of the test voltage equivalent values, including:

According to the mapping relationship between each of the test supply voltages and each of the test voltage equivalent values at different test temperatures, the voltage equivalent model parameters at different test temperatures are obtained.

In some embodiments, the building module 1030 is adapted to construct each voltage equivalent model corresponding to each test temperature according to each voltage equivalent model parameter at different test temperatures;

The voltage equivalent value acquisition unit 1011 is suitable for acquiring the voltage equivalent value of the voltage acquisition device of the integrated circuit, including:

Suitable for obtaining the equivalent value of the voltage acquisition device of the integrated circuit and the device environment temperature of the voltage acquisition device;

The voltage equivalent value conversion unit 1012 is adapted to obtain the device voltage according to the voltage equivalent value and the pre-constructed voltage equivalent model of the voltage acquisition device, including:

It is suitable to obtain the device voltage according to the voltage equivalent value, the device ambient temperature and each of the voltage equivalent models.

In some embodiments, the voltage equivalent value conversion unit 1012 is adapted to obtain the device voltage according to the voltage equivalent value, the device ambient temperature and each of the voltage equivalent models, including:

Suitable for obtaining the temperature interval between each of the test temperatures;

Suitable for determining the corresponding temperature interval according to the ambient temperature of the device, obtaining the current temperature interval, and obtaining the temperature-voltage equivalent model in each of the voltage equivalent models corresponding to the current temperature interval;

Suitable for obtaining the interval endpoint device voltage according to the voltage equivalent value and each of the temperature and voltage equivalent models;

It is suitable to obtain the device voltage according to the device environment temperature, the endpoint temperature of the current temperature interval and the endpoint device voltage of the interval.

In some embodiments, the voltage equivalent value conversion unit 1012 is adapted to obtain the device voltage according to the device environment temperature, the endpoint temperature of the current temperature interval and the endpoint device voltage of the interval, including:

It is suitable to use a linear interpolation method to obtain the device voltage according to the device ambient temperature, the endpoint temperature of the current temperature interval and the endpoint device voltage of the interval.

In some embodiments, the voltage drop acquisition device of the integrated circuit's internal power supply network further includes:

A one-time programmable circuit adapted to store the voltage equivalent model parameters.

In other embodiments, the voltage drop acquisition device 1000 of the integrated circuit internal power supply network includes a building module 1030 of a voltage equivalent model, and the building module includes:

The model data acquisition unit is adapted to acquire the pre-stored test voltage equivalent values of each test supply voltage of the integrated circuit and the voltage acquisition device corresponding to each test supply voltage when the integrated circuit has no working load. ;

The model construction unit is adapted to construct the voltage equivalent model according to each of the corresponding test supply voltages and each of the test voltage equivalent values.

In some embodiments, the voltage acquisition device includes a power supply monitor that is non-conductive.

In some embodiments, the number of the voltage acquisition devices includes at least two, and each voltage acquisition device is connected to a different position of the internal power supply network of the integrated circuit. The voltage drop of the internal power supply network of the integrated circuit is Obtain device 1000, including:

The voltage acquisition module 1010 is adapted to acquire the power supply voltage of the integrated circuit and the device voltage of the voltage acquisition device of the integrated circuit when the integrated circuit has a workload, including:

Obtain the power supply voltage of the integrated circuit and the device voltage of each integrated circuit acquisition device when there is a workload on the integrated circuit;

The voltage drop calculation module 1020 is adapted to obtain the voltage difference between the power supply voltage and the device voltage. The step of obtaining the voltage drop from the power supply to the internal power supply network of the integrated circuit includes:

The voltage difference between the power supply voltage and each of the device voltages is obtained, and the voltage drops from the power supply to different positions of the internal power supply network of the integrated circuit are obtained.

In some embodiments, the number of the voltage acquisition devices includes at least two, and each voltage acquisition device is connected to a different position of the internal power supply network of the integrated circuit. The voltage drop of the internal power supply network of the integrated circuit is Obtain device 1000, including:

The voltage acquisition module 1010 is adapted to acquire the power supply voltage of the integrated circuit and the device voltage of the voltage acquisition device of the integrated circuit when the integrated circuit has a workload, and the voltage acquisition device is provided on the integrated circuit, including :

When the integrated circuit has a workload, the supply voltage of the integrated circuit and the voltage of each integrated circuit are obtained, and the minimum value of the device voltage of the device is obtained.

The voltage drop calculation module 1020 is adapted to obtain the voltage difference between the power supply voltage and the device voltage, and obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit, including:

The voltage difference between the minimum value of the power supply voltage and the device voltage is obtained to obtain the voltage drop from the power supply to the internal power supply network of the integrated circuit.

An embodiment of the present application also provides an integrated circuit, including:

Internal power network, connected to the power supply of the integrated circuit;

Internal components of the integrated circuit connected to the internal power supply network;

A voltage acquisition device is connected to the internal power supply network and is adapted to acquire the voltage value at both ends of the internal device of the integrated circuit in real time.

In some embodiments, the integrated circuit may also include:

A temperature sensor is connected to the internal power supply network and is adapted to detect the device environment temperature of the voltage acquisition device.

An embodiment of the present application further provides an electronic device, which may include the integrated circuit provided above in the embodiment of the present application.

The electronic equipment and integrated circuits provided by the embodiments of the present application can obtain the voltage drop of the internal power supply network of the integrated circuit that can realize real-time control of the power supply, and can then adjust the voltage of the variable resistor in real time according to the voltage drop to ensure The voltage can be stabilized within the desired range. Furthermore, based on the acquisition of the voltage drop of the internal power supply network of the specific integrated circuit, a more accurate voltage drop can be obtained, which can be used for comparison with the voltage drop used in the design stage. Correct subsequent designs.

Although the embodiments of the present application are disclosed above, the present application is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the protection scope of the present application shall be subject to the scope defined by the claims.

Claims (25)

1. A method for acquiring a voltage drop of an internal power supply network of an integrated circuit, comprising:

acquiring a power supply voltage of an integrated circuit and a device voltage of a voltage acquisition device of the integrated circuit when the integrated circuit has a work load, wherein the voltage acquisition device is arranged on the integrated circuit;

Obtaining a voltage difference between the power supply voltage and the device voltage to obtain a voltage drop from a power supply to an internal power supply network of the integrated circuit;

the step of acquiring the device voltage of the voltage acquisition device of the integrated circuit when the integrated circuit has a workload comprises the following steps:

acquiring a voltage equivalent value of a voltage acquisition device of the integrated circuit and a device environment temperature of the voltage acquisition device;

and acquiring the device voltage according to the voltage equivalent value, the device ambient temperature and the pre-constructed voltage equivalent model of the voltage acquisition device.

2. The method for acquiring the voltage drop of the internal power supply network of the integrated circuit according to claim 1, wherein the step of constructing the voltage equivalent model comprises the steps of:

acquiring a pre-stored voltage equivalent model parameter;

and constructing the voltage equivalent model according to the voltage equivalent model parameters.

3. The method for acquiring the voltage drop of the internal power supply network of the integrated circuit according to claim 2, wherein the step of acquiring the voltage equivalent model parameter comprises the steps of:

when the integrated circuit is free of workload, each test power supply voltage of the integrated circuit and each test voltage equivalent value of the voltage acquisition device corresponding to each test power supply voltage are acquired;

And obtaining the voltage equivalent model parameters according to the mapping relation between each test power supply voltage and each test voltage equivalent value.

4. The method of claim 3, wherein the step of obtaining each test supply voltage of the integrated circuit and each test voltage equivalent value of the voltage obtaining device corresponding to each test supply voltage when the integrated circuit is not under a workload comprises:

when no workload of the integrated circuit is acquired, at different test temperatures, each test power supply voltage of the integrated circuit and each test voltage equivalent value of the voltage acquisition device corresponding to each test power supply voltage are acquired;

the step of obtaining the voltage equivalent model parameters according to the mapping relation between each test power supply voltage and each test voltage equivalent value comprises the following steps:

and obtaining the voltage equivalent model parameters at different test temperatures according to the mapping relation between the test power supply voltage and the test voltage equivalent values at different test temperatures.

5. The method of claim 4, wherein the step of constructing the voltage equivalent model from the voltage equivalent model parameters comprises:

and constructing each voltage equivalent model corresponding to each test temperature according to each voltage equivalent model parameter at different test temperatures.

6. The method of claim 5, wherein the step of obtaining the device voltage based on the voltage equivalent value, the device ambient temperature, and a pre-built voltage equivalent model of the voltage obtaining device comprises:

acquiring a temperature interval between the test temperatures;

determining the corresponding temperature interval according to the device environment temperature to obtain a current temperature interval, and obtaining a temperature-voltage equivalent model in each voltage equivalent model corresponding to the current temperature interval;

acquiring the device voltage of the interval endpoint according to the voltage equivalent value and each temperature voltage equivalent model;

and acquiring the device voltage according to the device environment temperature, the end point temperature of the current temperature interval and the device voltage of the interval end point.

7. The method of claim 6, wherein the step of obtaining the device voltage based on the device ambient temperature, the end point temperature of the current temperature interval, and the interval end point device voltage comprises:

and obtaining the device voltage according to the device environment temperature, the end point temperature of the current temperature interval and the device voltage of the interval end point by using a linear interpolation method.

8. The method of claim 2, wherein the voltage equivalent model parameters are stored in a one-time programmable circuit.

9. The method for acquiring the voltage drop of the internal power supply network of the integrated circuit according to claim 1, wherein the step of constructing the voltage equivalent model comprises the steps of:

when no workload of the integrated circuit is obtained, each test power supply voltage of the integrated circuit and each test voltage equivalent value of the voltage obtaining device corresponding to each test power supply voltage are obtained;

and constructing the voltage equivalent model according to the test power supply voltages and the test voltage equivalent values which correspond to each other.

10. The method of any of claims 1-9, wherein the voltage acquisition device comprises a power monitor, the power monitor being non-conductive.

11. The method of any of claims 1-9, wherein the number of voltage acquisition devices includes at least two, and each of the voltage acquisition devices is connected to a different location of the internal power network of the integrated circuit;

the step of acquiring the supply voltage of the integrated circuit and the device voltage of the voltage acquisition device of the integrated circuit when the integrated circuit has a workload comprises the following steps:

acquiring a power supply voltage of an integrated circuit and a device voltage of a voltage acquisition device of each integrated circuit when the integrated circuit has a work load;

the step of obtaining the voltage difference between the power supply voltage and the device voltage to obtain a voltage drop from a power supply to the internal power supply network of the integrated circuit includes:

and obtaining the voltage difference between the power supply voltage and the device voltage to obtain voltage drops from the power supply to different positions of the internal power supply network of the integrated circuit.

12. The method of any of claims 1-9, wherein the number of voltage acquisition devices includes at least two, and each of the voltage acquisition devices is connected to a different location of the internal power network of the integrated circuit;

the step of acquiring the supply voltage of the integrated circuit and the device voltage of the voltage acquisition device of the integrated circuit when the integrated circuit has a workload comprises the following steps:

acquiring the minimum value of the power supply voltage of the integrated circuit and the device voltage of a voltage acquisition device of each integrated circuit when the integrated circuit has a work load;

the step of obtaining the voltage difference between the power supply voltage and the device voltage to obtain a voltage drop from a power supply to the internal power supply network of the integrated circuit includes:

and obtaining a voltage difference value of the minimum value of the power supply voltage and the device voltage, and obtaining a voltage drop from a power supply to an internal power supply network of the integrated circuit.

13. A voltage drop acquisition device for an internal power supply network of an integrated circuit, comprising:

the voltage acquisition module is suitable for acquiring the power supply voltage of the integrated circuit and the device voltage of a voltage acquisition device of the integrated circuit when the integrated circuit has a work load, and the voltage acquisition device is arranged on the integrated circuit;

The voltage drop calculation module is suitable for obtaining a voltage difference value between the power supply voltage and the device voltage to obtain a voltage drop from a power supply to an internal power supply network of the integrated circuit;

the voltage acquisition module includes:

the voltage equivalent value acquisition unit is suitable for acquiring the voltage equivalent value of a voltage acquisition device of the integrated circuit and the device environment temperature of the voltage acquisition device;

the voltage equivalent value conversion unit is suitable for obtaining the device voltage according to the voltage equivalent value, the device environment temperature and the pre-constructed voltage equivalent model of the voltage obtaining device.

14. The voltage drop acquisition device of an integrated circuit internal power supply network of claim 13, further comprising a building block of the voltage equivalent model, the building block comprising:

the model parameter acquisition unit is suitable for acquiring the pre-stored voltage equivalent model parameters;

and the model construction unit is suitable for constructing the voltage equivalent model according to the voltage equivalent model parameters.

15. The voltage drop acquisition device of an integrated circuit internal power supply network according to claim 14, wherein the voltage equivalent model parameters are acquired by a parameter acquisition module comprising:

The test power supply voltage and test voltage equivalent value acquisition sub-module is suitable for acquiring each test power supply voltage of the integrated circuit and each test voltage equivalent value of the voltage acquisition device corresponding to each test power supply voltage when the integrated circuit has no work load;

and the voltage equivalent model parameter acquisition sub-module is suitable for obtaining the voltage equivalent model parameters according to the mapping relation between each test power supply voltage and each test voltage equivalent value.

16. The voltage drop acquisition device of an internal power supply network of an integrated circuit of claim 15, wherein the test supply voltage and test voltage equivalent value acquisition sub-module adapted to acquire respective test supply voltages of the integrated circuit and respective test voltage equivalent values of the voltage acquisition devices corresponding to respective ones of the test supply voltages when the integrated circuit is not under a workload, comprises:

when no workload of the integrated circuit is acquired, at different test temperatures, each test power supply voltage of the integrated circuit and each test voltage equivalent value of the voltage acquisition device corresponding to each test power supply voltage are acquired;

The voltage equivalent model parameter obtaining sub-module is suitable for obtaining the voltage equivalent model parameters according to the mapping relation between each test power supply voltage and each test voltage equivalent value, and comprises the following steps:

and obtaining the voltage equivalent model parameters at different test temperatures according to the mapping relation between the test power supply voltage and the test voltage equivalent values at different test temperatures.

17. The voltage drop acquiring device of an internal power supply network of an integrated circuit according to claim 16, wherein the constructing module is adapted to construct each of the voltage equivalent models corresponding to each of the test temperatures according to each of the voltage equivalent model parameters at different test temperatures.

18. The voltage drop acquiring apparatus of an internal power supply network of an integrated circuit according to claim 17, wherein the voltage equivalent value converting unit adapted to acquire the device voltage based on the voltage equivalent value, the device ambient temperature, and a previously constructed voltage equivalent model of the voltage acquiring device, comprises:

is suitable for obtaining the temperature interval between each test temperature;

the temperature interval corresponding to the device environment temperature is determined, a current temperature interval is obtained, and a temperature-voltage equivalent model in each voltage equivalent model corresponding to the current temperature interval is obtained;

The method is suitable for obtaining the device voltage at the end point of the interval according to the voltage equivalent value and each temperature voltage equivalent model;

and the device voltage is obtained according to the device environment temperature, the end point temperature of the current temperature interval and the device voltage of the interval end point.

19. The voltage drop acquiring device for an internal power supply network of an integrated circuit according to claim 18, wherein said voltage equivalent value converting unit adapted to acquire said device voltage based on said device ambient temperature, an end point temperature of said current temperature interval and said interval end point device voltage, comprises:

and obtaining the device voltage according to the device environment temperature, the end point temperature of the current temperature interval and the device voltage of the interval end point by using a linear interpolation method.

20. The voltage drop acquisition device of an integrated circuit internal power supply network of claim 13, further comprising a building block of the voltage equivalent model, the building block comprising:

the model data acquisition unit is suitable for acquiring the equivalent value of each test voltage of the voltage acquisition device corresponding to each test power supply voltage of the integrated circuit when the prestored integrated circuit has no workload;

The model construction unit is suitable for constructing the voltage equivalent model according to the test power supply voltage and the test voltage equivalent value which are mutually corresponding.

21. A voltage drop across an internal power supply network for an integrated circuit as recited in any of claims 13-20, wherein said voltage acquisition device comprises a power supply monitor, said power supply monitor being non-conductive.

22. The voltage drop across the internal power supply network of an integrated circuit according to any one of claims 13-20, wherein the number of voltage acquisition devices comprises at least two, and each of the voltage acquisition devices is connected to a different location of the internal power supply network of the integrated circuit;

the voltage acquisition module is suitable for acquiring the power supply voltage of the integrated circuit and the device voltage of a voltage acquisition device of the integrated circuit when the integrated circuit has a work load, and comprises the following components:

acquiring a power supply voltage of an integrated circuit and a device voltage of a voltage acquisition device of each integrated circuit when the integrated circuit has a work load;

the voltage drop calculation module is adapted to obtain a voltage difference between the power supply voltage and the device voltage, and obtain a voltage drop from a power supply to an internal power supply network of the integrated circuit, and includes:

And obtaining the voltage difference between the power supply voltage and the device voltage to obtain voltage drops from the power supply to different positions of the internal power supply network of the integrated circuit.

23. The voltage drop across the internal power supply network of an integrated circuit according to any one of claims 13-20, wherein the number of voltage acquisition devices comprises at least two, and each of the voltage acquisition devices is connected to a different location of the internal power supply network of the integrated circuit;

the voltage acquisition module is suitable for acquiring the power supply voltage of the integrated circuit and the device voltage of a voltage acquisition device of the integrated circuit when the integrated circuit has a work load, and comprises the following components:

adapted to obtain a minimum value of a supply voltage of the integrated circuit and a device voltage of a voltage obtaining device of each of said integrated circuits when a workload exists for said integrated circuits;

the voltage drop calculation module is adapted to obtain a voltage difference between the power supply voltage and the device voltage, and obtain a voltage drop from a power supply to an internal power supply network of the integrated circuit, and includes:

and obtaining a voltage difference between the minimum value of the power supply voltage and the device voltage, and obtaining a voltage drop from a power supply to the internal power supply network of the integrated circuit.

24. An integrated circuit, comprising:

an internal power supply network connected with a power supply of the integrated circuit;

an integrated circuit internal device connected to the internal power supply network;

the voltage acquisition device is connected to the internal power supply network and is suitable for acquiring voltage values of two ends of the internal device of the integrated circuit in real time, wherein the voltage values of the two ends of the internal device of the integrated circuit are device voltages of the voltage acquisition device; the step of obtaining the voltage values of two ends of the internal device of the integrated circuit comprises the following steps: when the integrated circuit has a workload, acquiring a voltage equivalent value of a voltage acquisition device of the integrated circuit and a device environment temperature of the voltage acquisition device; and acquiring the device voltage according to the voltage equivalent value, the device ambient temperature and the pre-constructed voltage equivalent model of the voltage acquisition device.

25. The integrated circuit of claim 24, further comprising:

and the temperature sensor is connected with the internal power supply network and is suitable for detecting the device environment temperature of the voltage acquisition device.