CN114256178A - High-power chip heat dissipation structure and preparation method thereof - Google Patents
High-power chip heat dissipation structure and preparation method thereof Download PDFInfo
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 172
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000110 cooling liquid Substances 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims description 54
- 239000007788 liquid Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 15
- 238000012546 transfer Methods 0.000 abstract description 21
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000002826 coolant Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明公开一种高功率芯片散热结构及其制备方法，涉及微电子散热技术领域。所述高功率芯片散热结构包括：位于所述高功率芯片上的散热组件，所述散热组件与所述高功率芯片键合在一起；位于所述高功率芯片与所述散热组件之间的换热件，可以通过散热组件将冷却液引到高功率芯片正面的发热结区，以及通过换热件增加高功率芯片和散热组件之间的有效换热面积，提升了换热能力，在换热件上连接散热组件使得芯片产热通过芯片正面散失带走，使高功率芯片的发热结区可以直接和冷却液进行热交换，使得芯片产热直接传导至冷却液，通过冷却液的循环流动进而被带走，缩短了传热路径，提高了芯片的散热能力，满足高功率芯片的信号屏蔽需求和芯片的散热需求。
The invention discloses a high-power chip heat dissipation structure and a preparation method thereof, and relates to the technical field of microelectronic heat dissipation. The high-power chip heat-dissipating structure includes: a heat-dissipating component located on the high-power chip, the heat-dissipating component and the high-power chip are bonded together; a switch located between the high-power chip and the heat-dissipating component Heat parts, the cooling liquid can be led to the heat generating junction area on the front of the high-power chip through the heat-dissipating components, and the effective heat-exchange area between the high-power chip and the heat-dissipating components can be increased through the heat-exchanging parts, which improves the heat-exchanging capacity. The heat dissipation component is connected to the component so that the heat generated by the chip is dissipated through the front side of the chip, so that the heat-generating junction area of the high-power chip can directly exchange heat with the cooling liquid, so that the heat generated by the chip is directly conducted to the cooling liquid, and the circulating flow of the cooling liquid further Being taken away, the heat transfer path is shortened, the heat dissipation capability of the chip is improved, and the signal shielding requirements of high-power chips and the heat dissipation requirements of the chip are met.
Description
Technical Field
The invention relates to the technical field of microelectronic heat dissipation, in particular to a high-power chip heat dissipation structure and a preparation method thereof.
Background
With the development of semiconductor technology, the performance of a semiconductor chip is continuously improved, and the power applied to the chip is also continuously increased, so that the problem of increasing the heat power consumption of the chip is brought, and if the heat generated by the chip cannot be dissipated and taken away in time, the temperature of the chip is rapidly increased, and the performance, the service life and other parameters of the chip are seriously influenced. Simultaneously, the heat production of the heating junction area of chip often is inhomogeneous, and this can lead to the temperature distribution on the chip inhomogeneous, can make to have great temperature gradient in the chip, can produce local high temperature hot spot on the one hand, influences the stability of chip, and the thermal stress that on the other hand temperature gradient produced can reduce the reliability of chip. At present, many high-power chips are applied to radio frequency, radio frequency signals pass through the chips, and in order to prevent the radio frequency signals from being interfered by external electromagnetic waves, corresponding shielding structures need to be designed to protect the high-power chips.
At present, a heat dissipation method of a high power chip includes: the metal heat sink is manufactured through micro machining, then thermal interface materials such as heat conduction silver paste and the like are coated on the back of the high-power chip semiconductor substrate, and the metal heat sink is adhered to the lower side of the semiconductor substrate through the thermal interface materials. The heat generated by the chip is conducted to the heat sink through the semiconductor substrate and the thermal interface material, and the heat sink exchanges heat with the environment, so that the heat generated by the chip is dissipated, and the heat dissipation effect is achieved.
The heat dissipation method of the high-power chip further comprises the following steps: the semiconductor substrate with the micro-channel structure and the cover plate with the liquid inlet and outlet structure are manufactured through a semiconductor processing technology, the semiconductor substrate with the micro-channel structure and the cover plate with the liquid inlet and outlet structure are bonded, a complete micro-channel with working medium circulating flow capacity is realized, then interface materials such as heat conduction silver paste and the like are coated on the back of the semiconductor substrate of the high-power chip, the micro-channel with the double-layer structure is bonded below the semiconductor substrate of the high-power chip through the thermal interface materials, chip heat is conducted to the micro-channel through the semiconductor substrate and the thermal interface materials, the micro-channel exchanges heat with cooling working media in the channel, the heat generated by the chip is dissipated and taken away through the circulating flow of the cooling working media, and the heat dissipation effect is realized.
The heat dissipation method of the high-power chip further comprises the following steps: the method comprises the steps of etching a micro-channel on the back surface of a high-power chip by a semiconductor etching technology, manufacturing a liquid inlet and outlet structure in another semiconductor substrate by a semiconductor processing technology, and bonding the semiconductor substrate where the high-power chip is located and the other semiconductor substrate with the liquid inlet and outlet structure to form an integrated chip which is formed by double layers of semiconductor substrates and provided with the micro-channel and the liquid inlet and outlet. The chip generates heat and is conducted through the semiconductor substrate, then the heat exchange is carried out through the semiconductor substrate and the cooling working medium in the micro-channel, the heat generated by the chip is dissipated and taken away through the flowing of the cooling working medium, and the heat dissipation effect is realized.
However, in the conventional heat dissipation method for high-power chips, the heat dissipation of the chip needs to be conducted to the back of the chip and then dissipated, and the heat dissipation effect is seriously affected by the thermal conductivity of the semiconductor substrate of the high-power chip, but by using the method for dissipating heat from the front of the chip, the effective heat exchange area of the chip and the cooling working medium becomes one of the important factors affecting the heat dissipation effect, generally, in order to meet the requirement of electrical connection of the chip, the heat diffusion layer manufactured on the front of the high-power chip should be in the area within the electrical pins of the chip, so that the area of the heat diffusion layer on the front of the high-power chip is limited by the distribution of the electrical pins on the chip, and in the heat dissipation process, the heat exchange between the heat diffusion layer on the front of the chip and the cooling working medium is directly performed, the size limitation further causes the problem of small effective heat exchange area between the chip and the cooling working medium, so that the micro-flow heat dissipation method cannot well realize the heat dissipation effect, the heat generated by the chip can not be dissipated and taken away in time and can be gathered at the heating junction area of the chip, so that the temperature of the chip is increased sharply, the performance of the chip is seriously influenced, and even the chip fails.
Disclosure of Invention
The invention aims to provide a high-power chip heat dissipation structure and a preparation method thereof, and aims to solve the problems that in the heat dissipation process at present, a heat dissipation layer on the front surface of a chip directly exchanges heat with a cooling working medium, the size limitation further causes the small effective heat exchange area between the chip and the cooling working medium, so that the heat dissipation effect cannot be well realized by a microflow heat dissipation method, the heat generated by the chip cannot be dissipated and taken away in time, the heat generated by the chip can be accumulated at a chip heating junction area, the temperature of the chip is sharply increased, and the performance of the chip is seriously influenced or even the chip fails.
In a first aspect, the present invention provides a high power chip heat dissipation structure, applied in a heat dissipation process of a high power chip, the high power chip heat dissipation structure comprising:
the heat dissipation assembly is positioned on the high-power chip, the heat dissipation assembly and the high-power chip are bonded together, and the projection of the heat dissipation assembly on the high-power chip at least covers a heating junction area of a device layer of the high-power chip and is used for dissipating heat generated by the high-power chip;
and the heat exchange piece is positioned between the high-power chip and the heat dissipation assembly and is used for increasing the heat dissipation area between the high-power chip and the heat dissipation assembly.
Adopt under the condition of above-mentioned technical scheme, can introduce the positive knot area that generates heat of high power chip through radiator unit, and increase the effective heat transfer area between high power chip and the radiator unit through the heat transfer spare, thereby the problem that positive heat dissipation medium-high power chip and the effective heat transfer area of heat radiation structure are little among the prior art has been solved, the heat transfer capacity has been promoted, it makes the chip heat production to pass through the positive scattered and disappearing of chip and take away to connect radiator unit on the heat transfer spare, the knot area that generates heat that makes high power chip can directly carry out the heat exchange with the coolant liquid, make the chip heat production directly conduct to the coolant liquid, circulation flow through the coolant liquid and then taken away, the heat transfer route has been shortened, the heat-sinking capability of chip has been improved, the signal shielding demand of high power chip and the heat dissipation demand of chip are satisfied.
In a possible implementation manner, the heat exchange member comprises a heat exchange layer, and a side surface of the heat exchange layer facing the heat dissipation assembly is provided with a microstructure.
In a possible implementation manner, a side surface of the heat exchange layer facing the heat dissipation assembly includes a bonding region and a non-bonding region, the non-bonding region is disposed opposite to a heat generation junction region of a device layer of the high-power chip, the microstructure is located in the non-bonding region, and the bonding region is located at a periphery of the non-bonding region and is used for bonding with the heat dissipation assembly.
In a possible implementation manner, the heat dissipation structure further includes a bonding ring, and the bonding ring is located in the bonding region and is used for sealing the non-bonding region.
In one possible implementation, the microstructure comprises a plurality of micro-convex driver structures and/or a plurality of micro-concave sub-structures, and the cross-sectional shapes of the plurality of micro-convex driver structures comprise one or more of rectangles, semicircles, trapezoids, and triangles; the cross-sectional shapes of the plurality of micro-depression substructures comprise one or more of a cuboid, a semicircle, an inverted trapezoid and an inverted triangle.
In one possible implementation, the heat dissipation assembly includes a cooling structure and an electrical connection assembly bonded together; a plurality of cooling liquid channels are formed in the cooling structure, each cooling liquid channel comprises a liquid inlet channel, a micro-channel and a liquid outlet channel which are communicated, and the micro-channel is positioned on the front surface of the high-power chip; the heat exchange piece is positioned between the micro-channel and the high-power chip;
in the working process of the high-power chip, the liquid inlet channel is used for guiding cooling liquid into the micro-channel, the cooling liquid passes through the heat exchange piece to dissipate heat of the heating junction area of the high-power chip through the cooling liquid and the heat exchange piece, and the liquid outlet channel is used for guiding out the cooling liquid passing through the micro-channel;
one side of the electrical connection assembly is connected with the cooling structure, and the other side of the electrical connection assembly is electrically connected with the high-power chip.
In one possible implementation manner, the high-power chip comprises a semiconductor substrate, a device layer, a surface dielectric layer and chip electrical pins, wherein the device layer, the surface dielectric layer and the chip electrical pins are sequentially arranged on the semiconductor substrate, the chip electrical pins are positioned on two sides of the surface dielectric layer,
the heat dissipation assembly comprises a cooling structure and an electrical connection assembly, pins of a patch panel circuit in the electrical connection assembly are connected with the electrical pins of the chip in a one-to-one correspondence mode, one side of the electrical connection assembly is connected with the cooling structure, and the other side of the electrical connection assembly is electrically connected with the high-power chip.
In a second aspect, the present invention further provides a method for manufacturing a high power chip heat dissipation structure, for manufacturing the high power chip heat dissipation structure of any one of the first aspect, the method including:
manufacturing a heat exchange piece on the surface of the high-power chip, and preparing a heat dissipation assembly;
bonding the heat dissipation assembly with the heat exchange piece to obtain the high-power chip heat dissipation structure; the heat exchange piece is used for accelerating the heat exchange between the high-power chip and the heat dissipation assembly; the heat exchange piece is used for increasing the heat dissipation area between the high-power chip and the heat dissipation assembly.
In a possible implementation manner, the manufacturing of the heat exchange piece on the surface of the high-power chip includes:
manufacturing a metal thin layer on the surface of the high-power chip;
and carrying out flattening treatment on the metal thin layer, and preparing the surface microstructure in a non-bonding area on the flattened metal thin layer to obtain the heat exchange piece.
In a possible implementation manner, the disposing of the heat dissipation assembly above the front surface of the heat exchange member includes:
preparing an electrical connection assembly and a cooling structure, and forming a heat dissipation assembly comprising the cooling structure and the electrical connection assembly; and connecting one side of the electrical connecting assembly in the heat dissipation assembly with the cooling structure, and electrically connecting the other side of the electrical connecting assembly with the high-power chip.
The beneficial effects of the preparation method of the high-power chip heat dissipation structure provided in the second aspect are the same as those of the high-power chip heat dissipation structure described in the first aspect or any possible implementation manner of the first aspect, and are not described herein again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 shows a schematic structural diagram of a high-power chip heat dissipation structure provided in an embodiment of the present application;
fig. 2 is a schematic flow chart illustrating a method for manufacturing a high-power chip heat dissipation structure according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating a process for preparing a heat exchange member on a high power chip according to an embodiment of the present application;
FIG. 4 is a schematic structural diagram illustrating a microstructure of a heat exchange element according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram illustrating a process for manufacturing a cooling structure according to an embodiment of the present disclosure.
Description of the drawings:
01-high power chip; 02-a heat dissipation assembly; 03-heat exchange member; 021-cooling structure; 022-electrical connection components; 031-heat exchange layer; 032 — microstructure; 0211-coolant channel; 0211 a-a liquid inlet channel; 0211 b-micro flow channel; 0211 c-liquid outlet channel; 023-bonding a ring on the surface of the heat dissipation structure; 011-a semiconductor substrate; 012-a device layer; 013-surface dielectric layer; a-a heat-generating junction region; an X-patch panel circuit; y-chip electrical pins; t-micro vias; 04-Heat sink substrate.
Detailed Description
In order to facilitate clear description of technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish the same items or similar items having substantially the same functions and actions. For example, the first threshold and the second threshold are only used for distinguishing different thresholds, and the sequence order of the thresholds is not limited. Those skilled in the art will appreciate that the terms "first," "second," etc. do not denote any order or quantity, nor do the terms "first," "second," etc. denote any order or importance.
It is to be understood that the terms "exemplary" or "such as" are used herein to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
In the present invention, "at least one" means one or more, "a plurality" means two or more. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a and b combination, a and c combination, b and c combination, or a, b and c combination, wherein a, b and c can be single or multiple.
Fig. 1 shows a schematic structural diagram of a high-power chip heat dissipation structure provided in an embodiment of the present application, which is applied to a heat dissipation process of a high-power chip, and as shown in fig. 1, the high-power chip heat dissipation structure includes:
the heat dissipation assembly 02 is positioned on the high-power chip 01, the heat dissipation assembly 02 and the high-power chip 01 are bonded together, and the projection of the heat dissipation assembly 02 on the high-power chip 01 at least covers a 012 heat generation junction area A of a device layer of the high-power chip 01, so as to dissipate heat generated by the high-power chip 01;
and the heat exchange piece 03 is positioned between the high-power chip 01 and the heat dissipation assembly 02 and is used for increasing the heat dissipation area between the high-power chip 01 and the heat dissipation assembly 02.
To sum up, the high power chip heat radiation structure that this application embodiment provided, can introduce the positive knot area that generates heat of high power chip with the coolant liquid through radiator unit, and increase the effective heat transfer area between high power chip and the radiator unit through the heat transfer spare, thereby the problem that positive heat dissipation medium high power chip and the effective heat transfer area of heat radiation structure are little among the prior art has been solved, the heat transfer capacity has been promoted, it makes the chip heat production to pass through the positive scattering and disappearing of chip and takes away to connect radiator unit on the heat transfer spare, the knot area that generates heat that makes high power chip can directly carry out the heat exchange with the coolant liquid, make the direct heat production conduction of chip to the coolant liquid, circulation flow through the coolant liquid and then taken away, the heat transfer route has been shortened, the heat-sinking capacity of chip has been improved, satisfy the signal shielding demand of high power chip and the heat dissipation demand of chip.
Optionally, as shown in fig. 1, the high-power chip includes a semiconductor substrate 011, and a device layer 012, a surface dielectric layer 013 and a chip electrical pin Y located on the device layer 012, which are sequentially disposed on the semiconductor substrate 011, on both sides of the surface dielectric layer 013.
The heat dissipation assembly 02 comprises a cooling structure 021 and an electrical connection assembly 022, pins of an adapter plate circuit X in the electrical connection assembly 022 are connected with electrical pins Y of the chip in a one-to-one correspondence manner, one side of the electrical connection assembly 022 is connected with the cooling structure, and the other side of the electrical connection assembly 022 is electrically connected with the high-power chip 01.
Optionally, referring to fig. 1, pins of the interposer circuit X are connected to the chip electrical pins Y in a one-to-one correspondence.
The surface dielectric layer can play a role in shielding and protecting the device.
Alternatively, the material of the semiconductor substrate may include silicon, silicon carbide, diamond, sapphire, or the like, which is not particularly limited in this embodiment.
Optionally, referring to fig. 1, the heat exchange member 03 includes a heat exchange layer 031, and a surface of the heat exchange layer 031 facing the heat dissipation assembly 02 has microstructures 032.
Optionally, referring to fig. 1, a surface of one side of the heat exchanging layer 031 facing the heat dissipating assembly 02 includes a bonding region and a non-bonding region, the non-bonding region is opposite to the heat generating junction region a of the device layer 012 of the high power chip 01, the microstructure 032 is located in the non-bonding region, and the bonding region is located at a periphery of the non-bonding region and is used for bonding with the heat dissipating assembly 02.
Optionally, the heat exchange member has a better thermal conductivity, and the heat exchange member may be a metal thin layer, and is configured to increase a heat dissipation area between the high-power chip 01 and the heat dissipation assembly 02, that is, increase an effective heat exchange area between the high-power chip and the heat dissipation assembly.
Optionally, the material of the metal thin layer may include copper, gold, aluminum, silver, and the like, which is not specifically limited in this embodiment of the application and may be adjusted according to an actual application scenario.
Optionally, the microstructure may comprise a plurality of micro-convex driver structures and/or a plurality of micro-concave sub-structures, the cross-sectional shape of the plurality of micro-convex driver structures comprising one or more of a rectangle, a semicircle, a trapezoid and a triangle; the cross-sectional shapes of the micro-depression substructures comprise one or more of a cuboid, a semicircle, an inverted trapezoid and an inverted triangle, the cross-sectional shapes and the sizes of the micro-structures are not specifically limited, and the micro-structures can be marked and adjusted according to practical application scenes.
Optionally, the heat dissipation assembly 02 includes a cooling structure 021 and an electrical connection assembly 022 bonded together; a plurality of cooling liquid channels 0211 are formed in the cooling structure 021, each cooling liquid channel 021 comprises a liquid inlet channel 0211a, a micro flow channel 0211b and a liquid outlet channel 0211c which are communicated, and the micro flow channel 0211b is positioned on the front surface of the high-power chip 01;
in the working process of the high-power chip 01, the liquid inlet channel 0211a is used for introducing cooling liquid into the micro flow channel 0211b so as to radiate the heat-generating junction area a of the high-power chip 01, and the liquid outlet channel 0211c is used for leading out the cooling liquid passing through the micro flow channel 0211 b;
one side of the electrical connection assembly 022 is connected to the cooling structure, and the other side is electrically connected to the high power chip 01.
Optionally, referring to fig. 2, the heat dissipation assembly 02 further comprises a heat dissipation structure surface bonding ring 023, where the bonding ring 023 is located in the bonding region for sealing the non-bonding region to form a sealed microchannel to prevent the cooling fluid from the cooling structure from infiltrating into the electrical connection assembly 022.
The surface bonding ring of the heat dissipation structure may be a sealing isolation ring or other sealing isolation devices, which is not specifically limited in this embodiment of the present application, and may be specifically calibrated and adjusted according to an actual application scenario. The sealing isolation ring is used for forming a sealed micro-channel, and the tissue cooling liquid seeps out of the micro-channel, so that the stability and reliability of the electrical characteristics of nearby electrical structures are ensured.
In this application, the microchannel can be zigzag, can realize shortening the regional distance of flowing through to the coolant liquid for the coolant liquid can flow through the high power chip openly the size be the region of micron order of magnitude, and this region includes above-mentioned heat generation junction area.
Optionally, the liquid inlet channel includes a liquid inlet, the liquid outlet channel includes a liquid outlet, the liquid inlet with the liquid outlet is located the heat radiation assembly deviates from the positive one side of high power chip.
Optionally, referring to fig. 2, the high-power chip further includes a chip electrical pin Y, and the chip electrical pin Y is located in the surface dielectric layer.
Optionally, referring to fig. 2, the electrical connection component 022 includes an interposer circuit X, and pins in the interposer circuit X are electrically connected to the chip electrical pins Y in a one-to-one correspondence manner.
The adapter board circuit is used for being connected with pins of the high-power chip to form complete electrical connection and used for power supply and signal input of the high-power chip. The number of pins of the interposer circuit corresponds to the number of pins on the high power chip, and the relative positions between the pins of the interposer circuit correspond to the relative positions between the electrical pins on the high power chip.
Alternatively, the material for manufacturing the cooling structure may include a semiconductor material, silicon, glass, epoxy glass cloth laminated board (FR4), organic glass, metal copper, and metal copper molybdenum alloy, and the like, which is not particularly limited in this embodiment.
To sum up, the high power chip heat radiation structure that this application embodiment provided, can introduce the positive knot area that generates heat of high power chip with the coolant liquid through radiator unit, and increase the effective heat transfer area between high power chip and the radiator unit through the heat transfer spare, thereby the problem that positive heat dissipation medium high power chip and the effective heat transfer area of heat radiation structure are little among the prior art has been solved, the heat transfer capacity has been promoted, it makes the chip heat production to pass through the positive scattering and disappearing of chip and takes away to connect radiator unit on the heat transfer spare, the knot area that generates heat that makes high power chip can directly carry out the heat exchange with the coolant liquid, make the direct heat production conduction of chip to the coolant liquid, circulation flow through the coolant liquid and then taken away, the heat transfer route has been shortened, the heat-sinking capacity of chip has been improved, satisfy the signal shielding demand of high power chip and the heat dissipation demand of chip.
Fig. 2 is a schematic flow chart illustrating a method for manufacturing another high-power chip heat dissipation structure according to an embodiment of the present application, for manufacturing the high-power chip heat dissipation structure shown in fig. 1, where as shown in fig. 2, the method includes:
step 101: and manufacturing a heat exchange piece on the surface of the high-power chip to prepare a heat dissipation assembly.
Optionally, the heat exchange member has a better thermal conductivity, and the heat exchange member may be a metal thin layer, and is configured to increase a heat dissipation area between the high-power chip 01 and the heat dissipation assembly 02, that is, increase an effective heat exchange area between the high-power chip and the heat dissipation assembly.
Optionally, the material of the metal thin layer may include copper, gold, aluminum, silver, and the like, which is not specifically limited in this embodiment of the application and may be adjusted according to an actual application scenario.
Optionally, referring to fig. 1, the heat exchange member 03 includes a heat exchange layer 031, and a surface of the heat exchange layer 031 facing the heat dissipation assembly 02 has microstructures 032.
Optionally, referring to fig. 1, a surface of one side of the heat exchanging layer 031 facing the heat dissipating assembly 02 includes a bonding region and a non-bonding region, the non-bonding region is opposite to the heat generating junction region a of the device layer 012 of the high power chip 01, the microstructure 032 is located in the non-bonding region, and the bonding region is located at a periphery of the non-bonding region and is used for bonding with the heat dissipating assembly 02.
Optionally, the heat exchange member has a better thermal conductivity, and the heat exchange member may be a metal thin layer, and is configured to increase a heat dissipation area between the high-power chip 01 and the heat dissipation assembly 02, that is, increase an effective heat exchange area between the high-power chip and the heat dissipation assembly.
Optionally, the material of the metal thin layer may include copper, gold, aluminum, silver, and the like, which is not specifically limited in this embodiment of the application and may be adjusted according to an actual application scenario.
In the application, a metal thin layer can be manufactured on the surface of the high-power chip; and carrying out flattening treatment on the metal thin layer, and preparing the surface microstructure in a non-bonding area on the flattened metal thin layer to obtain the heat exchange piece.
The heat exchange layer in the bonding region is used for keeping the flatness of the surface of the high-power chip and ensuring that the bonding of the heat exchange piece and the heat dissipation assembly can be realized.
Fig. 3 shows a schematic process of preparing a heat exchange member on a high power chip according to an embodiment of the present application, and as shown in fig. 3(a), a high power chip 01 including a semiconductor substrate 011 is provided, and further, as shown in fig. 3(b), a heat exchange layer 031 in the heat exchange member 03 is fabricated on a surface of the high power chip 01, where the heat exchange layer 031 includes a bonding region and a non-bonding region, as shown in fig. 3(c), a planarization process may be performed on the heat exchange layer 031 in the heat exchange member, as shown in fig. 3(d), and the surface microstructure 032 is prepared in the non-bonding region on the planarized heat exchange layer 031, so as to obtain the heat exchange member.
Optionally, the microstructure may comprise a plurality of micro-convex driver structures and/or a plurality of micro-concave sub-structures, the cross-sectional shape of the plurality of micro-convex driver structures comprising one or more of a rectangle, a semicircle, a trapezoid and a triangle; the cross-sectional shapes of the micro-depression substructures comprise one or more of a cuboid, a semicircle, an inverted trapezoid and an inverted triangle, the cross-sectional shapes and the sizes of the micro-structures are not specifically limited, and the micro-structures can be marked and adjusted according to practical application scenes.
For example, fig. 4 is a schematic structural diagram illustrating a microstructure of a heat exchange element provided in an embodiment of the present application, and as shown in fig. 4(a), a cross-sectional shape of the plurality of micro-convex driver structures 032A includes a rectangle; as shown in fig. 4(B), the cross-sectional shapes of the plurality of micro-convex driver structures 032A are semicircular, as shown in fig. 4(c), the cross-sectional shapes of the plurality of micro-convex driver structures 032A are triangular, and as shown in fig. 4(d), the cross-sectional shapes of the plurality of micro-concave sub-structures 032B are semicircular.
Optionally, the method for manufacturing the heat exchange layer may include magnetron sputtering, evaporation coating, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and the like, which is not specifically limited in this embodiment of the application and may be specifically adjusted according to an actual application scenario.
The method for manufacturing the microstructure on the surface of the heat exchange layer can include magnetron sputtering, evaporation coating, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), chemical corrosion, laser etching, plasma etching and the like, and the embodiment of the present application is not particularly limited to this, and can be specifically adjusted according to actual application scenarios.
Step 102: and bonding the heat dissipation assembly and the heat exchange member to obtain the high-power chip heat dissipation structure.
The heat exchange piece is used for accelerating the heat exchange between the high-power chip and the heat dissipation assembly; the heat exchange piece is used for increasing the heat dissipation area between the high-power chip and the heat dissipation assembly.
In the application, the heat exchange piece with the surface microstructure on the front surface of the high-power chip and the surface of the heat dissipation assembly with the circuit are bonded, so that the high-power chip and the surface circuit of the heat dissipation assembly are electrically interconnected, and a sealed micro channel is formed at the same time, so that a cooling working medium can flow through the front surface of the high-power chip, and heat exchange is realized through the heat exchange piece with the surface microstructure on the front surface of the high-power chip and the high-power chip.
Wherein, the heat dissipation assembly includes an electrical connection assembly and a cooling structure, the implementation process of step 102 may include:
substep 1021: preparing an electrical connection assembly and the cooling structure, and forming a heat dissipation assembly comprising the cooling structure and the electrical connection assembly.
In the present application, the cooling structure the preparing of the electrical connection assembly and the cooling structure comprises the following sub-steps:
substep A1: preparing the cooling structure.
Substep A2: and manufacturing the electrical connection assembly on one side of the cooling structure close to the high-power chip.
Substep A3: and bonding the cooling structure and the electrical connecting assembly to form the liquid inlet channel, the liquid outlet channel and the micro-channel.
In the present application, the above sub-step a1 and sub-step a 2: the specific implementation process of preparing the first cooling assembly and preparing the electrical connection assembly on the side of the first cooling assembly close to the high-power chip may include:
substep B1: a heat-dissipating substrate is provided that includes opposing first and second sides.
For example, fig. 5 shows a schematic process of preparing a cooling structure according to an embodiment of the present application, and as shown in fig. 5(a), a heat dissipation substrate 04 including a first side and a second side opposite to each other is first provided.
Substep B2: and preparing a heat dissipation structure surface bonding ring and an adapter plate circuit on the heat dissipation substrate from the first surface.
The adapter board circuit is used for being connected with pins of the high-power chip to form complete electrical connection and used for power supply and signal input of the high-power chip. The number of pins of the interposer circuit corresponds to the number of pins on the high power chip, and the relative positions between the pins of the interposer circuit correspond to the relative positions between the electrical pins on the high power chip.
For example, referring to fig. 5(b), a heat dissipating structure surface bonding ring 023 and an interposer circuit X are prepared on the heat dissipating substrate 04.
Optionally, the surface bonding ring of the heat dissipation structure and the adapter plate circuit may be prepared by magnetron sputtering, wet chemical plating, evaporation coating, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and the like.
Substep B3: and manufacturing a micro-channel with a first preset depth in the heat dissipation substrate from the first surface.
In the application, the specific value of the first preset depth is not specifically limited, and calibration adjustment can be performed according to an actual application scene.
For example, referring to fig. 5(c), the micro flow channel 0211b is etched to a first predetermined depth.
Substep B4: and manufacturing a micro-through hole with a second preset depth communicated with the micro-channel in the heat dissipation substrate from the second surface along the extension direction of the micro-channel.
The adapter plate circuit comprises a plurality of adapter electrical pins, and the number of the adapter electrical pins is consistent with that of the chip electrical pins; the positions of the switching electrical pins and the positions of the chip electrical pins are arranged in a one-to-one correspondence mode.
For example, referring to fig. 5(d), micro-through holes T with a second predetermined depth are formed in the heat dissipation substrate from the second side along the extending direction of the micro-channels, and are communicated with the micro-channels, so as to form a liquid inlet channel and a liquid outlet channel.
Optionally, the second surface of the heat dissipation substrate and the first surface of the second heat dissipation substrate may be bonded by a silicon-silicon bonding, an anodic bonding, a gold-silicon bonding, a gold-gold bonding, a gold-tin bonding, a gold-indium bonding, a copper-copper thermocompression bonding, a polymer wafer bonding, or other bonding methods.
Optionally, the method for manufacturing the micro flow channel, the micro through hole, the liquid inlet channel and the liquid outlet channel in the heat dissipation assembly may include deep silicon etching (DRIE), plasma etching, reactive ion etching, laser etching, chemical etching, and the like, which is not specifically limited in this embodiment of the present application.
Step 1022: and connecting one side of the electrical connecting assembly in the heat dissipation assembly with the cooling structure, and electrically connecting the other side of the electrical connecting assembly with the high-power chip.
In the working process of the high-power chip, the liquid inlet channel is used for leading cooling liquid into the micro-channel to dissipate heat of a heating junction area of the high-power chip, and the liquid outlet channel is used for leading out the cooling liquid passing through the micro-channel.
Wherein, be formed with a plurality of coolant liquid channels among the cooling structure, every coolant liquid channel all is including the inlet channel, microchannel and the liquid outlet channel that are linked together, just the microchannel is located high power chip is positive.
In the application, the method for introducing the cooling liquid to the heating junction area on the front side of the high-power chip through the schemes of the silicon-based microfluid adapter plate, the glass microfluid adapter plate and the like, dissipating heat generated by the chip from the front side of the chip through the cooling liquid to realize heat dissipation of the high-power chip, and simultaneously realizing electrical connection of the high-power chip through a circuit on the heat dissipation assembly belongs to implementation measures of the scheme.
It should be noted that, a thin layer with a surface microstructure is manufactured on the front side of the high-power chip, the thin layer is connected with the heat dissipation assembly, the effective heat exchange area of the chip and the heat dissipation assembly is increased through the microstructure on the surface of the thin layer, the heat exchange capacity of the chip and the cooling working medium is improved, heat is dissipated and taken away through the circulation flow of the cooling working medium in the heat dissipation assembly on the front side of the chip, and the method for realizing the heat dissipation of the high-power chip belongs to implementation measures of the method.
According to the heat dissipation method of the high-power chip, the thin layer with the surface microstructure is manufactured on the front side of the high-power chip, the effective heat exchange area of the chip and the heat dissipation structure is increased through the surface microstructure of the thin layer, the heat exchange capacity of the chip and the heat dissipation structure is improved, the cooling working medium is guided to the front side of the chip through the heat dissipation assembly connected with the thin layer with the surface microstructure, heat generated by a chip heating junction area is dissipated from the front side of the chip through the heat exchange of the cooling working medium and the chip, the heat dissipation capacity of the high-power chip is improved, efficient heat dissipation of the high-power chip is achieved, and the heat dissipation requirement of the high-power chip is met.
In summary, according to the preparation method of the high-power chip heat dissipation structure provided by the embodiment of the present application, a heat exchange member may be manufactured on the surface of the high-power chip, a heat dissipation assembly is prepared, and the heat dissipation assembly is bonded with the heat exchange member to obtain the high-power chip heat dissipation structure; the heat exchange piece is used for accelerating the heat exchange between the high-power chip and the heat dissipation assembly; the heat exchange piece is used for increasing the heat dissipation area between the high-power chip and the heat dissipation component, the cooling liquid can be guided to the heating junction area on the front surface of the high-power chip through the heat dissipation component, and the effective heat exchange area between the high-power chip and the heat dissipation component is increased through the heat exchange component, thereby solving the problem of small effective heat exchange area of the high-power chip and the heat dissipation structure in the front heat dissipation in the prior art, improving the heat exchange capability, the heat exchange piece is connected with the heat dissipation component to dissipate and take away heat generated by the chip through the front surface of the chip, so that the heat generation junction area of the high-power chip can directly exchange heat with the cooling liquid to directly transfer the heat generated by the chip to the cooling liquid, the cooling liquid flows circularly and is taken away, so that a heat transfer path is shortened, the heat dissipation capacity of the chip is improved, and the signal shielding requirement and the heat dissipation requirement of the high-power chip are met.
While the invention has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
While the invention has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations can be made thereto without departing from the spirit and scope of the invention. Accordingly, the specification and figures are merely exemplary of the invention as defined in the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116230667A (en) * | 2022-12-28 | 2023-06-06 | 江苏中科智芯集成科技有限公司 | Semiconductor packaging structure and preparation method |
| CN116230667B (en) * | 2022-12-28 | 2023-12-22 | 江苏中科智芯集成科技有限公司 | Semiconductor packaging structure and preparation method |
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