CN114244304A - Method for suppressing clutter of temperature compensation type surface acoustic wave device - Google Patents
Method for suppressing clutter of temperature compensation type surface acoustic wave device Download PDFInfo
- Publication number
- CN114244304A CN114244304A CN202111613628.5A CN202111613628A CN114244304A CN 114244304 A CN114244304 A CN 114244304A CN 202111613628 A CN202111613628 A CN 202111613628A CN 114244304 A CN114244304 A CN 114244304A
- Authority
- CN
- China
- Prior art keywords
- temperature compensation
- holes
- finger
- hole
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 4
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 15
- 230000001629 suppression Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a method for inhibiting clutter of a temperature compensation type surface acoustic wave device, which comprises the following steps: 1) cleaning the wafer; 2) manufacturing a metal interdigital layer of the surface acoustic wave device on the device surface of the wafer; 3) manufacturing a flattened temperature compensation layer on the wafer, and covering the metal interdigital layer by the temperature compensation layer; 4) and processing a plurality of through holes or blind holes in the part of the temperature compensation layer, which is positioned on the upper side of the metal interdigital layer. According to the invention, the plurality of through holes or blind holes are arranged in the temperature compensation layer, so that out-of-band clutter can be effectively inhibited, and the passband bandwidth is increased. Through holes or blind holes with various shapes and sizes can be made by adopting a photoetching and etching method.
Description
Technical Field
The invention relates to the technical field of surface acoustic wave device processing, in particular to a temperature compensation layer clutter suppression method of a temperature compensation type surface acoustic wave (TCSAW) device.
Background
Surface Acoustic Wave (SAW) devices are widely applied to various communications, and in future communication applications, in order to adapt to various severer external environments, improvement of the working stability of the SAW devices is urgently needed. Temperature is one of the important parameters affecting the operational stability of surface acoustic wave devices. During the fabrication of SAW devices, the state of the device is determined once it is packaged. However, with the change of the external temperature, many parameters of the surface acoustic wave device, such as the thickness, width, elastic coefficient and the like of the interdigital and the substrate, will change, and the wave speed and frequency of the SAW will drift accordingly; meanwhile, the temperature change can also generate thermal stress, and the working performance of the device is deteriorated. For example, in a SAW device (TCF = -75ppm/° c) fabricated on 128 YX lithium niobate, the frequency drifts by 10.5MHz when the operating temperature changes from-55 ℃ to 85 ℃ at a center frequency of 1 GHz. Therefore, how to ensure good frequency stability of the SAW device in the temperature variation process becomes a main problem for improving the working performance of the SAW device, and various researches and researches are conducted by many experts and scholars.
In order to meet better temperature stability, a temperature compensation layer made of materials such as SiO2 needs to be made on the surface of a conventional SAW device in a thick mode. Because the temperature compensation layer forms the lower surface combined with the metal interdigital and the free upper surface, noise waves are transmitted in the device when the surface acoustic wave device works, the phenomena of bandwidth narrowing, out-of-band inhibition, protrusion and the like are caused, and finally the electrical property of the device is poor; therefore, clutter suppression and increased bandwidth are needed.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: how to provide a temperature compensation layer clutter suppression method of a temperature compensation type surface acoustic wave (TCSAW) device aims at solving the problem that clutter in the existing TCSAW device affects out-of-band suppression and bandwidth, can increase out-of-band suppression at the low end outside a passband and increase passband bandwidth, meets the requirements of high out-of-band suppression and large bandwidth in the existing system, and accordingly improves the electrical performance index of the TCSAW.
In order to solve the technical problems, the invention adopts the following technical scheme:
a method for suppressing clutter of a temperature compensation type surface acoustic wave device comprises the following steps:
1) cleaning the wafer;
2) manufacturing a metal interdigital layer of the surface acoustic wave device on the device surface of the wafer;
3) manufacturing a flattened temperature compensation layer on a wafer, and covering a metal interdigital by the temperature compensation layer;
4) and processing a plurality of through holes or blind holes in the part of the temperature compensation layer positioned on the upper side of the metal interdigital.
For optimization, the wafer adopts lithium tantalate single crystal, lithium niobate single crystal or a wafer containing a piezoelectric layer.
Preferably, the metal interdigital layer comprises a real finger and an artificial finger, wherein the artificial finger is positioned outside the real finger and close to the edge of the real finger.
Preferably, the temperature compensation layer is a silicon-containing dielectric film such as silicon dioxide, fluorine-containing silicon dioxide, silicon nitride and the like.
As an optimization, the forming of the through holes or blind holes in the temperature compensation layer in step 4) comprises the following steps,
a) designing a mask layout of the through holes or the blind holes, and manufacturing the mask;
b) coating photoresist on the surface of the temperature compensation layer, exposing the photoresist through a mask, developing, and forming through holes or blind holes on the photoresist;
c) and finishing the processing of the through hole or the blind hole with the set depth on the temperature compensation layer according to the selection ratio of the dry etching or wet process, and finally removing the photoresist and the polymer.
Preferably, the cross section of the through hole or the blind hole is in various shapes such as a circle, a square or an ellipse.
Preferably, the size of the cross section of the through hole or the blind hole is between 10nm and 100 mu m.
As optimization, the distance between the adjacent through holes or blind holes is 10 nm-100 mu m.
Preferably, the mask comprises one of a real finger mask plate, a fake finger mask plate and a full-coverage mask plate, wherein through hole or blind hole pattern structures corresponding to a real finger part are distributed on the real finger mask plate, through hole or blind hole pattern structures corresponding to a fake finger part are distributed on the fake finger mask plate, and through hole or blind hole pattern structures corresponding to the real finger part and the fake finger part are distributed on the full-coverage mask plate.
Compared with the prior art, the application has the following beneficial effects: through set up a plurality of through-holes or blind hole in the temperature compensation layer, can restrain the outband clutter effectively, increase the passband bandwidth. Through holes or blind holes with various shapes and sizes can be made by adopting a photoetching and etching method.
Drawings
FIG. 1 is a schematic cross-sectional view of a wafer after cleaning.
Fig. 2 is a schematic structural diagram of a completed metal interdigital layer on a wafer.
Fig. 3 is a schematic diagram of a rear cross-sectional structure of a temperature compensation layer for performing planarization on a metal interdigital layer.
Fig. 4 is a schematic cross-sectional view of a through hole or a blind hole formed in a dummy finger portion.
FIG. 5 is a schematic cross-sectional view of a through hole or a blind hole formed in a real finger portion.
Fig. 6 is a schematic cross-sectional view of a structure in which through holes or blind holes are formed in the dummy finger and the real finger simultaneously.
FIG. 7 is a schematic top view of a through hole or a blind hole in a temperature compensation layer;
in the figure, 1 wafer, 2 temperature compensation layer, 201 true finger partial temperature compensation layer, 202 false finger partial temperature compensation layer, 3 through hole or blind hole, 4 true finger, 5 false finger.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
In the specific implementation: with reference to figures 1-7 of the drawings,
a method for suppressing clutter of a temperature compensation type surface acoustic wave device comprises the following steps:
1) the wafer 1 is cleaned. Cleaning by adopting the conventional cleaning technology, and cleaning the wafer 1; wherein, the wafer 1 adopts lithium tantalate single crystal, lithium niobate single crystal or other wafers containing piezoelectric materials, so as to manufacture the temperature compensation type surface acoustic wave device.
2) And manufacturing a metal interdigital layer of the surface acoustic wave device on the device surface of the wafer 1. In actual manufacturing, a wet (including stripping) process technology route and a dry etching route are used for completing the manufacturing, and the technology is mature prior art. The metal interdigital layer comprises a real finger 4 and an artificial finger 5, wherein the artificial finger 5 is positioned outside the real finger 4.
3) A planarized temperature compensation layer 2 is produced on the wafer 1 with a thickness h (from the upper surface of the wafer 1 to the free upper surface of the temperature compensation layer 2 in contact with air) and this temperature compensation layer 2 covers the metal inter-digital layer. The temperature compensation layer 2 corresponding to the real finger 4 is a real finger partial temperature compensation layer 201, and the temperature compensation layer 2 corresponding to the dummy finger 5 is a dummy finger partial temperature compensation layer 202. The temperature compensation layer 2 adopts silicon-containing element dielectric films such as silicon dioxide, fluorine-containing silicon dioxide, silicon nitride and the like so as to achieve the temperature compensation effect. In the manufacturing process, the manufacturing is finished by using methods such as film coating, polishing, photoetching, dry etching and the like; this technique is also mature prior art.
4) And a plurality of through holes or blind holes 3 are processed in the part of the temperature compensation layer 2, which is positioned on the upper side of the metal interdigital layer. Specifically, dense holes are formed by means of photoetching, dry etching or wet etching, the depth of the holes is 0-h, and the holes can be through holes or blind holes. The distance of the density between the pores may be between 10nm and 100 μm, and the cross-sectional size of the pores is in the range of 10nm to 100 μm. The cross section of the hole can be in various shapes such as a circle, a square, an ellipse or an irregular shape; the edges of the longitudinal section of the hole can be vertical or non-vertical, and can be different in diameter. The through holes or blind holes 3 may be in a regular or irregular surface density distribution.
Step 4) the formation of the through-holes or blind-holes 3 in the temperature compensation layer 2, comprising the steps of,
a) and designing a mask layout of the through holes or the blind holes 3 to manufacture the mask layout. Firstly, designing mask patterns of through holes or blind holes 3 with different structures, manufacturing a mask plate, covering a graphic structure with only a fake finger 5 part or only a fake finger 4 part or a fake finger 5 and a fake finger 4 part both provided with the through holes or the blind holes 3, namely, the mask plate comprises one of a real finger 4 mask plate, a fake finger 5 mask plate and a full-coverage mask plate, wherein the through holes or the blind holes 3 graphic structures corresponding to the real finger 4 part are distributed on the real finger 4 mask plate, the through holes or the blind holes 3 graphic structures corresponding to the fake finger 5 part are distributed on the fake finger 5 mask plate, and the through holes or the blind holes 3 graphic structures corresponding to the real finger 4 part and the fake finger 5 part are distributed on the full-coverage mask plate.
b) And coating photoresist on the surface of the temperature compensation layer 2, exposing the photoresist through a mask, and developing to form a through hole or blind hole 3 on the photoresist. Specifically, coating of photoresist is completed on the surface of the temperature compensation layer 2 which is flattened, and mask plates at different positions (the artificial finger 5, the real finger 4, the artificial finger 5 and the real finger 4) are selected according to the requirements of the through hole or the blind hole 3 for exposure, wherein the photoresist can be completely photosensitive in the exposure process, and the upper half part and the lower half part of the photoresist can be completely photosensitive; and then finishing development to form photoresist through holes or blind holes.
c) And finishing the processing of the through hole or blind hole 3 with the set depth (0-h) on the temperature compensation layer 2 according to the selection ratio of the dry etching or wet process, and finally removing the photoresist and the polymer.
Through set up a plurality of through-holes or blind hole 3 in temperature compensation layer 2, can restrain the out of band clutter effectively, increase the passband bandwidth. Through holes or blind holes 3 with various shapes or sizes can be made by adopting a photoetching and etching method.
The invention comprises the following steps:
1. the out-of-band clutter can be effectively suppressed.
2. The passband bandwidth can be increased.
3. Through holes or blind holes with various shapes or sizes can be made by adopting a photoetching and etching method.
Although embodiments of the present invention have been shown and described, it will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents, and thus the embodiments of the present invention are intended only as illustrative examples of the invention and are not to be construed as limiting the invention in any way.
Claims (9)
1. A method for suppressing clutter of a temperature compensation type surface acoustic wave device is characterized by comprising the following steps:
1) cleaning the wafer;
2) manufacturing a metal interdigital layer of the surface acoustic wave device on the device surface of the wafer;
3) manufacturing a flattened temperature compensation layer on the wafer, and covering the metal interdigital layer by the temperature compensation layer;
4) and processing a plurality of through holes or blind holes in the part of the temperature compensation layer, which is positioned on the upper side of the metal interdigital layer.
2. The method for suppressing clutter of a temperature compensated surface acoustic wave device as claimed in claim 1, wherein said wafer is a lithium tantalate single crystal or lithium niobate single crystal or other wafer containing a piezoelectric layer.
3. The method according to claim 1, wherein the metal interdigital layer comprises a real finger and an artificial finger, and the artificial finger is located outside the real finger.
4. The method according to claim 1, wherein the temperature compensation layer is a dielectric film containing silicon elements, such as silicon dioxide, fluorine-containing silicon dioxide, or silicon nitride.
5. The method for suppressing clutter of a temperature compensated surface acoustic wave device according to any of claims 1 to 4, wherein the forming of the through holes or blind holes in the temperature compensation layer in step 4) comprises the steps of,
a) designing a mask layout of the through holes or the blind holes, and manufacturing the mask;
b) coating photoresist on the surface of the temperature compensation layer, exposing the photoresist through a mask, developing, and forming through holes or blind holes on the photoresist;
c) and finishing the processing of the through hole or the blind hole with the set depth on the temperature compensation layer according to the selection ratio of the dry etching or wet process, and finally removing the photoresist and the polymer.
6. The method according to claim 5, wherein the step of suppressing the clutter of the temperature compensated SAW device comprises: the cross section of the through hole or the blind hole is circular, square or oval.
7. The method according to claim 5, wherein the step of suppressing the clutter of the temperature compensated SAW device comprises: the cross section size of the through hole or the blind hole is between 10nm and 100 mu m.
8. The method according to claim 5, wherein the step of suppressing the clutter of the temperature compensated SAW device comprises: the distance between the adjacent through holes or blind holes is 10 nm-100 mu m.
9. The method according to claim 5, wherein the step of suppressing the clutter of the temperature compensated SAW device comprises: the mask comprises one of a real finger mask plate, a fake finger mask plate and a full-coverage mask plate; the finger-covering mask plate is provided with through hole or blind hole graphic structures corresponding to a real finger part, the artificial finger mask plate is provided with through hole or blind hole graphic structures corresponding to an artificial finger part, and the full-covering mask plate is provided with through hole or blind hole graphic structures corresponding to the real finger part and the artificial finger part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111613628.5A CN114244304A (en) | 2021-12-27 | 2021-12-27 | Method for suppressing clutter of temperature compensation type surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111613628.5A CN114244304A (en) | 2021-12-27 | 2021-12-27 | Method for suppressing clutter of temperature compensation type surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114244304A true CN114244304A (en) | 2022-03-25 |
Family
ID=80763455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111613628.5A Pending CN114244304A (en) | 2021-12-27 | 2021-12-27 | Method for suppressing clutter of temperature compensation type surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114244304A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005167508A (en) * | 2003-12-01 | 2005-06-23 | Toyo Commun Equip Co Ltd | Piezoelectric oscillator |
| US20110227671A1 (en) * | 2010-03-16 | 2011-09-22 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN210986062U (en) * | 2019-08-05 | 2020-07-10 | 北京中讯四方科技股份有限公司 | Temperature compensation acoustic surface wave filter |
| US20200350891A1 (en) * | 2018-06-15 | 2020-11-05 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with etch-stop layer |
| CN112332795A (en) * | 2020-11-17 | 2021-02-05 | 华中科技大学 | A surface-slotted Lamb wave resonator |
| CN113193849A (en) * | 2021-05-08 | 2021-07-30 | 江苏卓胜微电子股份有限公司 | Surface acoustic wave transducer with multi-order transverse mode suppression and manufacturing method thereof |
| CN214380838U (en) * | 2020-12-31 | 2021-10-08 | 杭州左蓝微电子技术有限公司 | Surface acoustic wave resonator and filter based on improved temperature compensation layer |
-
2021
- 2021-12-27 CN CN202111613628.5A patent/CN114244304A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005167508A (en) * | 2003-12-01 | 2005-06-23 | Toyo Commun Equip Co Ltd | Piezoelectric oscillator |
| US20110227671A1 (en) * | 2010-03-16 | 2011-09-22 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
| US20200350891A1 (en) * | 2018-06-15 | 2020-11-05 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with etch-stop layer |
| CN210986062U (en) * | 2019-08-05 | 2020-07-10 | 北京中讯四方科技股份有限公司 | Temperature compensation acoustic surface wave filter |
| CN110708035A (en) * | 2019-10-21 | 2020-01-17 | 中国电子科技集团公司第二十六研究所 | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device |
| CN112332795A (en) * | 2020-11-17 | 2021-02-05 | 华中科技大学 | A surface-slotted Lamb wave resonator |
| CN214380838U (en) * | 2020-12-31 | 2021-10-08 | 杭州左蓝微电子技术有限公司 | Surface acoustic wave resonator and filter based on improved temperature compensation layer |
| CN113193849A (en) * | 2021-05-08 | 2021-07-30 | 江苏卓胜微电子股份有限公司 | Surface acoustic wave transducer with multi-order transverse mode suppression and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5766457B2 (en) | Elastic wave device and manufacturing method thereof | |
| CN108496257B (en) | Hybrid structures for surface acoustic wave devices | |
| KR100745428B1 (en) | Method of isolation for acoustic resonator devices | |
| JP2007336417A (en) | Surface acoustic wave element and method for manufacturing the same | |
| CN114244304A (en) | Method for suppressing clutter of temperature compensation type surface acoustic wave device | |
| CN110708035B (en) | Surface wave suppression method for temperature compensation layer upper surface of temperature compensation type surface acoustic wave device | |
| CN107871813B (en) | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device | |
| KR100287182B1 (en) | Method for forming a film for isolating devices | |
| CN117013984B (en) | Bonding wafer and film surface acoustic wave device | |
| JP4862451B2 (en) | Surface acoustic wave device and manufacturing method thereof | |
| CN112260659B (en) | high-Q-value film bulk acoustic resonator and preparation method thereof | |
| KR100289660B1 (en) | Trench Formation Method for Semiconductor Devices | |
| WO2019174097A1 (en) | Surface acoustic wave material and manufacturing method thereof | |
| CN111834222B (en) | Semiconductor structure and method for forming the same | |
| CN113346859A (en) | Surface acoustic wave resonator with high Q value and preparation method thereof | |
| CN111030631B (en) | Method for manufacturing acoustic wave device and acoustic wave device | |
| CN117155322A (en) | Preparation method of low-stress ALN piezoelectric film for film bulk acoustic wave device | |
| CN117081541B (en) | Surface acoustic wave resonator device, method of manufacturing the same, and filter | |
| JP5415903B2 (en) | Manufacturing method of surface acoustic wave element, surface acoustic wave element, and substrate for surface acoustic wave element | |
| KR20030020016A (en) | Surface acoustic wave filter using LBO substrate having multi layer structure and manufacturing mothod thereof | |
| KR100568302B1 (en) | Manufacturing method of SAS element | |
| US20210366725A1 (en) | Memory, substrate structure of the memory, and method for preparing the substrate structure of the memory | |
| CN117991428A (en) | Grating and method for manufacturing the same | |
| KR20050118471A (en) | A method for forming an isolation layer in semiconductor device and a method for a gate oxide using the same | |
| CN117233889A (en) | Method for forming silicon optical device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |