CN114242787B - Heat dissipation trench gate IGBT structure - Google Patents
Heat dissipation trench gate IGBT structure Download PDFInfo
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- CN114242787B CN114242787B CN202111639250.6A CN202111639250A CN114242787B CN 114242787 B CN114242787 B CN 114242787B CN 202111639250 A CN202111639250 A CN 202111639250A CN 114242787 B CN114242787 B CN 114242787B
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- 230000017525 heat dissipation Effects 0.000 title 1
- 239000002184 metal Substances 0.000 claims abstract description 20
- 210000004027 cell Anatomy 0.000 claims description 50
- 210000000746 body region Anatomy 0.000 claims description 21
- 238000002791 soaking Methods 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 6
- 210000005056 cell body Anatomy 0.000 claims description 3
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
本发明提供一种均热沟槽栅IGBT结构，包括：一个有效IGBT元胞和一个栅极热敏控制单元；所述有效IGBT元胞设置为沟槽栅型IGBT元胞；所述栅极热敏控制单元包括两个热敏电阻和两个二极管；其中一个热敏电阻和一个二极管串联形成第一串联支路用于控制栅极开通速度，第一串联支路的一端连接沟槽栅，另一端连接栅极金属；其中另一个热敏电阻和另一个二极管反向串联形成第二串联支路用于控制栅极关断速度，第二串联支路的一端连接沟槽栅，另一端连接栅极金属。本发明通过独立设置的沟槽栅以及热敏栅电阻，实现了单个元胞根据自身温度自行调节开关速度，使温度高的元胞降低损耗，从而达到降低自身结温的目的。对于整个IGBT芯片来说实现了热均衡。
The present invention provides a heat-equalizing trench gate IGBT structure, comprising: an effective IGBT cell and a gate thermal control unit; the effective IGBT cell is set as a trench gate IGBT cell; the gate thermal control unit includes two thermistors and two diodes; one thermistor and a diode are connected in series to form a first series branch for controlling the gate opening speed, one end of the first series branch is connected to the trench gate, and the other end is connected to the gate metal; another thermistor and another diode are connected in reverse series to form a second series branch for controlling the gate turning off speed, one end of the second series branch is connected to the trench gate, and the other end is connected to the gate metal. The present invention realizes that a single cell adjusts the switching speed according to its own temperature by independently setting the trench gate and the thermal gate resistor, so that the cell with high temperature reduces the loss, thereby achieving the purpose of reducing its own junction temperature. Thermal balance is achieved for the entire IGBT chip.
Description
Technical Field
The invention belongs to the field of semiconductor power devices, and particularly relates to a soaking trench gate IGBT structure.
Background
The IGBT structure is invented by introducing a P+ region into the back substrate of the power MOSFET, so that the IGBT structure can be regarded as a novel power device combining the power MOSFET and the BJT, has the advantages of high switching speed due to the fact that the MOS structure drives power, and high load capacity due to the fact that the saturation voltage drop of the BJT device is reduced, and gradually replaces the MOSFET and the BJT device in a converter system with the direct-current voltage of 600V or more. Therefore, the IGBT is widely applied to various fields such as motor control, induction cookers, air filtration frequency conversion, locomotive traction, high-voltage direct current transmission and the like, and becomes the hottest power device.
The current mainstream IGBT structure is a trench gate field cut-off type IGBT, and the IGBT has better on-off compromise characteristic, higher current density, better area and on ratio. To enhance in-plane uniformity and improve device parallel characteristics, a polysilicon gate resistor is integrated between the gate metal and the cell gate. The gate resistance value can be set at will according to design requirements, the process is simple, the process compatibility is strong, and no extra photoetching plate or process step is needed. Currently, IGBT chips integrating gate resistance have been used very widely.
Limitations of the prior art:
1. The grid resistor controls the switching speed of the whole chip cell, so that the cell far away from the grid metal can have the phenomenon of switching hysteresis, thus the cell which is conducted firstly can bear most of current easily, the phenomenon of current concentration in the IGBT switching process is caused, the current concentration easily causes heat concentration, the device failure is caused under the high-voltage current condition, and the in-plane consistency is particularly important for chips with larger areas.
2. The heat distribution in the chip surface is very important for reliability, the center temperature is generally high, the edge temperature is low, the failure rate is higher than that of the low temperature region when the high temperature region is used for a long time, and no very effective design method is available at present to realize single cell temperature adjustment and optimize the in-plane temperature consistency.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a soaking trench gate IGBT structure, which realizes heat balance for the whole IGBT chip and reduces the failure risk caused by chip heat concentration. In order to achieve the technical purpose, the technical scheme adopted by the embodiment of the invention is as follows:
The embodiment of the invention provides a soaking trench gate IGBT structure, which comprises an effective IGBT cell and a gate thermosensitive control unit;
The effective IGBT cell is arranged as a trench gate type IGBT cell;
The grid thermosensitive control unit comprises two thermistors and two diodes, wherein one thermistor and one diode are connected in series to form a first series branch for controlling the grid opening speed, one end of the first series branch is connected with a trench grid, the other end of the first series branch is connected with grid metal, the other thermistor and the other diode are connected in reverse series to form a second series branch for controlling the grid opening speed, one end of the second series branch is connected with the trench grid, and the other end of the second series branch is connected with the grid metal.
Further, the trench gate of each cell is independently separated from the trench gates of the other cells.
Further, the thermistor in the first series-connected branch is a negative temperature coefficient, and the thermistor in the second series-connected branch is a positive temperature coefficient.
Further, the two thermistors and the two diodes are arranged on one side of the top of the cell, and are independently isolated from each other and from the cell body region through an insulating medium layer;
The first series branch comprises a thermistor Rg2 and a diode D2, one end of the thermistor Rg2 is connected with the anode of the diode D2, the cathode of the diode D2 is in contact connection with the trench gate in the cell, the second series branch comprises a thermistor Rg1 and a diode D1, one end of the thermistor Rg1 is connected with the cathode of the diode D1, and the anode of the diode D1 is in contact connection with the trench gate in the cell.
Further, the other end of the thermistor Rg1 and the other end of the thermistor Rg2 are respectively connected with the gate metal through the G-pole contact hole.
The trench gate type IGBT cell comprises a collector heavy doping P-type region, collector metal is connected below the collector heavy doping P-type region, an electric field stop layer is arranged above the collector heavy doping P-type region, an N-type base region is arranged above the electric field stop layer, a trench gate of the cell is arranged in the N-type base region, a gate oxide layer is arranged between the trench gate and the N-type base region, a first P-type body region is arranged above the N-type base region on one side of the trench gate, an insulating medium layer is arranged above the first P-type body region, a carrier storage layer, a second P-type body region and a deep P-type region are distributed on the other side of the N-type base region from bottom to top, the doping concentration of the deep P-type region is higher than that of the P-type body region, and an N+ type source region is further arranged above the second P-type body region and close to the gate oxide layer.
And the N+ type source region and the deep P region are connected with the emitter metal through an E-pole contact hole.
Further, the depth of the first P type body region and the second P type body region is 3 μm to 6 μm, and the depth of the N+ type source region is 0.1 μm to 1 μm.
The technical scheme provided by the embodiment of the application has the beneficial effects that in the structure, one thermistor Rg2 is reduced along with the temperature rise of a cell area, so that the cell opening speed is increased, the opening loss is reduced, the other thermistor Rg1 is increased along with the temperature rise of the cell area, so that the cell closing speed is reduced, the Vce spike voltage is reduced, the thermal failure is avoided, in addition, the IGBT closing loss is generally not obviously changed by the grid resistance, even if the resistance value of the thermistor Rg1 is increased, the closing loss is not obviously increased, in the whole, when the temperature is increased, the switching speed of the single cell is controlled by the thermosensitive grid resistor, so that the total loss is reduced, the Vce spike voltage is reduced, and the occurrence of dangerous points is avoided. Thereby reducing the overall loss of the cell and realizing the purpose of reducing junction temperature. Because the temperature of each area directly controls the thermistor value, and each grid thermosensitive control unit independently controls the single unit cell, the switching speed and switching loss of the single unit cell can be controlled by the temperature of the single unit cell, the loss is low when the temperature is high, the junction temperature is prevented from further rising, the heat balance is realized for the whole IGBT chip, and the failure risk caused by the heat concentration of the chip is further reduced.
Drawings
Fig. 1 is a schematic diagram of an IGBT structure in an embodiment of the invention.
Fig. 2 is an electrical schematic diagram in an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, the embodiment of the invention provides a soaking trench gate IGBT structure, which comprises an effective IGBT cell and a gate thermal control unit;
The effective IGBT cell is arranged as a trench gate type IGBT cell;
The grid thermosensitive control unit comprises two thermistors and two diodes, wherein one thermistor and one diode are connected in series to form a first serial branch for controlling the grid opening speed, one end of the first serial branch is connected with the trench grid, and the other end of the first serial branch is connected with the grid metal;
It should be noted that in this embodiment, the trench gate of each cell is independently separated and not connected with the trench gates of other cells, so as to realize that each cell is independently controlled by the thermistor connected in series with itself;
as the optimization of the embodiment, the thermistor in the first serial branch is a negative temperature coefficient, and the thermistor in the second serial branch is a positive temperature coefficient, the resistance of the thermistor with the negative temperature coefficient is reduced along with the rise of temperature, so that the IGBT is quickly opened, the opening loss is obviously reduced, the self temperature rise is reduced, the resistance of the thermistor with the positive temperature coefficient is increased along with the rise of temperature, the turn-off di/dt is reduced, the Vce spike voltage is reduced, the occurrence of dangerous points is avoided, and the risk of IGBT thermal failure is reduced;
the two thermistors and the two diodes are arranged on one side of the top of the cell and are independently isolated from the cell body region through an insulating medium layer 12, in one specific embodiment, the first serial branch comprises a thermistor Rg2 and a diode D2, one end of the thermistor Rg2 is connected with the anode of the diode D2, the cathode of the diode D2 is in contact connection with a groove grid 5 in the cell, in some embodiments, one end of the thermistor Rg2 is connected with the anode of the diode D2 through a wire, in one specific embodiment, the second serial branch comprises a thermistor Rg1 and a diode D1, one end of the thermistor Rg1 is connected with the cathode of the diode D1, the anode of the diode D1 is in contact connection with the groove grid 5 in the cell, and in some embodiments, one end of the thermistor Rg1 is connected with the cathode of the diode D1 through a wire;
as an optimization of the embodiment, the other end of the thermistor Rg1 and the other end of the thermistor Rg2 are respectively connected with the gate metal through the G-pole contact hole 13;
Specifically, as shown in fig. 1, the trench gate type IGBT cell includes a collector heavily doped P-type region 2, a collector metal 1 is connected below the collector heavily doped P-type region 2, an electric field stop layer 3 is disposed above the collector heavily doped P-type region 2, an N-type base region 4 is disposed above the electric field stop layer 3, a trench gate 5 of the cell is disposed in the N-type base region 4, a gate oxide layer 6 is disposed between the trench gate 5 and the N-type base region 4, a first P-type body region 7 is disposed above the N-type base region 4 at one side of the trench gate 5, the depth of the first P-type body region 7 is 3 μm to 6 μm, the insulating medium layer 12 is disposed above the first P-type body region 7, a carrier storage layer 8, a second P-type body region 9 and a deep P-type region 10 are distributed from bottom to top at the other side of the N-type base region 4, the depth of the second P-type body region 9 is 3 μm to 6 μm, the doping concentration of the deep P-type region 10 is higher than the P-type body region concentration, and an n+ type source region 11 is further disposed above the second P-type body region 9 at a depth of 1 μm to 1.1 μm;
The n+ type source region 11 and the deep P region 10 are in short circuit connection, for example, through a wire, the n+ type source region 11 and the deep P region 10 are connected with emitter metal through an E-pole contact hole 14, in some embodiments, the n+ type source region 11 and the deep P region 10 can be connected with emitter metal through wires in short circuit connection, respectively through respective E-pole contact holes, or the n+ type source region 11 and the deep P region 10 can be connected with emitter metal through a communicated E-pole contact hole in short circuit connection, and simultaneously;
in the specific embodiment, the thermistor Rg2 is connected with the anode of the diode D2, the cathode of the diode D2 is in contact connection with the trench gate 5 in the cell, the gate opening speed is controlled, the thermistor Rg2 is reduced along with the temperature rise, so that the IGBT is opened faster, the opening loss is obviously reduced, the self temperature rise is further reduced, the thermistor Rg1 is connected with the cathode of the diode D1, the anode of the diode D1 is in contact connection with the trench gate 5 in the cell, the gate closing speed is controlled, the thermistor Rg1 is increased along with the temperature rise, the closing di/dt is reduced, the Vce spike voltage is reduced, the occurrence of dangerous points is avoided, the IGBT thermal failure risk is reduced, and the IGBT closing loss is not increased even if the gate resistance is increased because the IGBT closing loss is not greatly influenced by the gate resistance.
According to the embodiment of the invention, through the independently arranged trench gate and the thermistor, the switching speed of a single cell is automatically adjusted according to the temperature of the cell, so that the cell with high temperature reduces loss, and the purpose of reducing the junction temperature of the cell is achieved. And heat balance is realized for the whole IGBT chip, and failure risk caused by chip heat concentration is reduced.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present invention.
Claims (6)
1. A soaking trench gate IGBT structure is characterized by comprising an effective IGBT cell and a gate thermosensitive control unit;
The effective IGBT cell is arranged as a trench gate type IGBT cell;
The grid thermosensitive control unit comprises two thermistors and two diodes, wherein one thermistor and one diode are connected in series to form a first serial branch for controlling the grid opening speed, one end of the first serial branch is connected with the trench grid, and the other end of the first serial branch is connected with the grid metal;
the two thermistors and the two diodes are arranged on one side of the top of the cell, and are independently isolated from each other and isolated from the cell body region through an insulating medium layer;
the first series branch comprises a thermistor Rg2 and a diode D2, one end of the thermistor Rg2 is connected with the anode of the diode D2, and the cathode of the diode D2 is in contact connection with the trench gate in the cell;
The trench gate type IGBT cell comprises a collector heavily doped P-type region, collector metal is connected below the collector heavily doped P-type region, an electric field stop layer is arranged above the collector metal, an N-type base region is arranged above the electric field stop layer, a trench gate of the cell is arranged in the N-type base region, a gate oxide layer is arranged between the trench gate and the N-type base region, a first P-type body region is arranged above the N-type base region at one side of the trench gate, an insulating medium layer is arranged above the first P-type body region, a carrier storage layer, a second P-type body region and a deep P-type region are distributed at the other side of the N-type base region from bottom to top, the doping concentration of the deep P-type region is higher than that of the P-type body region, and an N+ type source region is further arranged above the second P-type body region and close to the gate oxide layer.
2. The soaking trench gate IGBT structure of claim 1 wherein,
The trench gate of each cell is independently separated and not connected to the trench gates of other cells.
3. The soaking trench gate IGBT structure of claim 1 wherein,
The thermistor in the first series-connected branch is a negative temperature coefficient, and the thermistor in the second series-connected branch is a positive temperature coefficient.
4. The soaking trench gate IGBT structure of claim 1 wherein,
The other end of the thermistor Rg1 and the other end of the thermistor Rg2 are respectively connected with the gate metal through the G-pole contact hole.
5. The soaking trench gate IGBT structure of claim 1 wherein,
The N+ type source region and the deep P region are connected in a short circuit manner, and the N+ type source region and the deep P region are connected with the emitter metal through the E-pole contact hole.
6. The soaking trench gate IGBT structure of claim 1 wherein,
The depth of the first P-type body region and the second P-type body region is 3 μm to 6 μm, and the depth of the N+ type source region is 0.1 μm to 1 μm.
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| CN115547963B (en) * | 2022-11-24 | 2023-04-07 | 深圳市威兆半导体股份有限公司 | Insulated Gate Bipolar Transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107644903A (en) * | 2017-09-14 | 2018-01-30 | 全球能源互联网研究院 | Trench gate IGBT device with high anti-short circuit capability and preparation method thereof |
| CN110957897A (en) * | 2019-08-07 | 2020-04-03 | 郑州嘉晨电器有限公司 | Drive circuit of a plurality of parallelly connected MOSFET switch tubes |
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| JPH1197679A (en) * | 1997-09-17 | 1999-04-09 | Hitachi Ltd | Semiconductor device |
| JP2005026279A (en) * | 2003-06-30 | 2005-01-27 | Toyota Industries Corp | Semiconductor device |
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| CN107644903A (en) * | 2017-09-14 | 2018-01-30 | 全球能源互联网研究院 | Trench gate IGBT device with high anti-short circuit capability and preparation method thereof |
| CN110957897A (en) * | 2019-08-07 | 2020-04-03 | 郑州嘉晨电器有限公司 | Drive circuit of a plurality of parallelly connected MOSFET switch tubes |
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