CN114221629A - A balanced superconducting quantum interference device microwave amplifier and preparation method thereof - Google Patents
A balanced superconducting quantum interference device microwave amplifier and preparation method thereof Download PDFInfo
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Abstract
The invention provides a balanced superconducting quantum interference device microwave amplifier and a preparation method thereof, and the balanced superconducting quantum interference device microwave amplifier comprises a first 3dB orthogonal directional coupler, a first impedance matching network, a second impedance matching network, a first superconducting quantum interference device, a second superconducting quantum interference device, a third impedance matching network, a fourth impedance matching network and a second 3dB orthogonal directional coupler. Compared with a single-circuit SQUID microwave amplifier circuit, the balanced type SQUID microwave amplifier not only can greatly improve the input-output matching performance, expand the working bandwidth of the device, be easier to realize cascade connection, but also can improve the saturation power of the amplifier and be good and stable. The balanced SQUID microwave amplifier is processed and realized by adopting a planar micro-nano preparation process, is compatible with the preparation processes of most of the conventional superconducting devices, and can greatly improve the integration level of a related low-temperature detection system.
Description
Technical Field
The invention belongs to the technical field of superconducting electronics, and relates to a balanced type superconducting quantum interference device microwave amplifier and a preparation method thereof.
Background
Superconducting qubits have advantages in terms of compatibility with conventional microelectronic processing techniques, controllability, low loss, and scalability, and are considered one of the most likely solutions to implement fault-tolerant quantum computers. The continuous development of large-scale superconducting qubit arrays (in the millions) and the improvement of the qubit manipulation precision are the main trends and directions for the future development of superconducting quantum computing technologies. The low-temperature microwave amplifier is one of key devices of the superconducting qubit circuit, not only requires low power consumption and low noise performance, but also can be integrated on a superconducting qubit device chip in the future to form a large-scale superconducting qubit array integrated circuit. The microwave low noise amplifiers commonly used in the superconducting qubit system at present mainly comprise a Josephson Junction Parametric Amplifier (JPA), a Traveling Wave Parametric Amplifier (TWPA), a SQUID microwave amplifier and a HEMT low temperature amplifier. Compared with a Josephson Junction Parametric Amplifier (JPA) and a Traveling Wave Parametric Amplifier (TWPA), the SQUID microwave amplifier can not only realize the noise temperature (90mK @1GHz) close to the quantum limit and the amplification gain exceeding 20dB, but also has the most prominent advantage that a local oscillator pumping signal is not needed. This will greatly reduce the required wiring complexity, especially important for future development of large scale systems. In addition, compared with the traditional semiconductor HEMT amplifier, the HEMT amplifier not only has lower power consumption, noise performance and size, but also is completely compatible with the preparation process of the superconducting qubit device, and can integrate the superconducting qubit device and a readout amplifying circuit on the same chip at the same time, which is particularly important for future large-scale superconducting qubit array circuits. However, the conventional single-channel Superconducting Quantum Interference Device (SQUID) microwave amplifier also has the problems of poor working stability, narrow working bandwidth, poor in-band flatness, low saturation power, difficulty in cascading and the like, and is difficult to meet various application requirements in the future Quantum computing field.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a balanced superconducting quantum interference device microwave amplifier and a method for manufacturing the same, which are used to solve the problems of poor operation stability, narrow operation bandwidth, poor flatness in band, low saturation power, and difficult cascade connection of the existing single-path SQUID microwave amplifier.
To achieve the above and other related objects, the present invention provides a balanced type superconducting quantum interference device microwave amplifier, comprising:
a first 3dB quadrature directional coupler for receiving an input signal;
the first impedance matching network and the second impedance matching network are connected with the output end of the first 3dB orthogonal directional coupler;
the first superconducting quantum interference device and the second superconducting quantum interference device are respectively connected with the output end of the first impedance matching network and the output end of the second impedance matching network;
the third impedance matching network and the fourth impedance matching network are respectively connected with the output end of the first superconducting quantum interference device and the output end of the second superconducting quantum interference device;
a second 3dB quadrature directional coupler, connected to the output terminal of the third impedance matching network and the output terminal of the fourth impedance matching network, for outputting a signal;
wherein the first 3dB quadrature directional coupler, the second 3dB quadrature directional coupler, the first impedance matching network, the second impedance matching network, the third impedance matching network, and the fourth impedance matching network all comprise a super-conductor transmission line structure.
Optionally, the first 3dB orthogonal directional coupler is configured to divide an input microwave signal into two paths of signals with equal power and a phase difference of 90 ° and output the two paths of signals to the first impedance matching network and the second impedance matching network, respectively; the second 3dB orthogonal directional coupler is used for synthesizing the two amplified microwave signals with 90-degree phase difference and equal power into one path of microwave signal and outputting the microwave signal.
Optionally, the first 3dB orthogonal directional coupler and the second 3dB orthogonal directional coupler each include one of a branch line coupler, a coupled line coupler, and a lange coupler.
Optionally, the first impedance matching network, the second impedance matching network, the third impedance matching network, and the fourth impedance matching network each comprise a planar transmission line impedance transformation network comprising one of a quarter wavelength impedance transformation network, a high low impedance transformation network, and an asymptote impedance transformation network.
Optionally, the superconducting transmission line structure includes at least one of a superconducting microstrip line, a superconducting coplanar waveguide line, a superconducting stripline, and a superconducting coupling line.
Optionally, the first and second superconducting quantum interference devices each comprise a superconducting loop of two josephson junctions and a superconducting wire, and comprise an input coupling coil for coupling incident microwave signals and a magnetic field bias coil for biasing an amplifier magnetic field on or near the superconducting loop.
Optionally, the first superconducting quantum interference device and the second superconducting quantum interference device both adopt a zero-order gradient configuration, a first-order gradient configuration or a multi-order gradient configuration.
The invention also provides a preparation method of the balanced type superconducting quantum interference device microwave amplifier, which is used for preparing the balanced type superconducting quantum interference device microwave amplifier, and comprises the following steps:
providing a substrate, forming a resistance layer on the substrate, and patterning the resistance layer;
forming a first insulating layer covering the resistance layer on the substrate, and forming a first via hole exposing the resistance layer in the first insulating layer;
forming a first superconducting layer, a barrier layer and a second superconducting layer on the first insulating layer from bottom to top in sequence, wherein the first superconducting layer is further filled into the first via hole to be connected with the resistance layer;
patterning the second superconducting layer to obtain a Josephson junction region;
patterning the barrier layer, leaving portions of the barrier layer under the Josephson junction regions;
patterning the first superconducting layer to obtain a loop and lead structure of the superconducting quantum interference device;
forming a second insulating layer covering the second superconducting layer on the first superconducting layer, and forming a plurality of second via holes in the second insulating layer, wherein at least one second via hole exposes the second superconducting layer, and at least one second via hole exposes the first superconducting layer;
and forming a third superconducting layer on the second insulating layer, and patterning the third superconducting layer, wherein the third superconducting layer is filled in the second via hole.
Optionally, the superconducting transmission line structures of the first 3dB orthogonal directional coupler, the second 3dB orthogonal directional coupler, the first impedance matching network, the second impedance matching network, the third impedance matching network, and the fourth impedance matching network are obtained based on patterning of the first superconducting layer and/or the third superconducting layer, respectively.
Optionally, the substrate comprises a Si layer and SiO layer stacked in sequence from bottom to bottom2Layer, or the substrate comprises MgO substrate and Al2O3One of the substrates; the resistance layer comprises at least one of a Mo layer, a TiPd layer and a TiAuPd layer.
As described above, the input and output ends of the whole circuit of the balanced superconducting quantum interference device microwave amplifier of the present invention are symmetrical about the SQUID, that is, a balanced symmetrical structure is adopted, and compared with a single-path SQUID microwave amplifier circuit, the balanced SQUID microwave amplifier not only can greatly improve the input and output matching performance, expand the working bandwidth of the device, and more easily realize the cascade connection; but also improves the amplifier saturation power and good stability. Meanwhile, the balanced SQUID microwave amplifier is processed and realized by adopting a planar micro-nano preparation process, is compatible with the preparation processes of most of the conventional superconducting devices, and can greatly improve the integration degree of a related low-temperature detection system.
Drawings
Fig. 1 shows a block diagram of a balanced superconducting quantum interference device microwave amplifier according to the present invention.
Fig. 2 is a basic structure diagram of a branch line coupler based on a superconducting microstrip line.
Figure 3 shows a basic configuration diagram of a SQUID in a second order gradient configuration.
Fig. 4 is a schematic structural diagram showing the resistive layer after patterning.
Fig. 5 shows a schematic structural view after a first insulating layer is formed and a first via hole is formed.
Fig. 6 is a schematic view showing a structure in which a first superconducting layer, a barrier layer, and a second superconducting layer are formed in this order from bottom to top.
Fig. 7 is a schematic view showing a structure exhibited after patterning the second superconducting layer.
Fig. 8 shows a schematic structure of the barrier layer after patterning.
Fig. 9 is a schematic view showing a structure exhibited after patterning the first superconducting layer.
Fig. 10 shows a schematic structural view after a second insulating layer is formed and a plurality of second via holes are formed.
Fig. 11 is a view showing a structure exhibited after the third superconducting layer is formed and patterned.
Description of the element reference numerals
100 first 3dB quadrature directional coupler
201 first impedance matching network
202 second impedance matching network
301 first superconducting quantum interference device
302 second superconducting quantum interference device
401 third impedance matching network
402 fourth impedance matching network
500 second 3dB quadrature directional coupler
601 input port
602. 603 output port
604 isolated port
701 first josephson junction
702 second josephson junction
703 first resistance layer
704 second resistive layer
801 substrate
802 resistive layer
803 first insulating layer
804 a first via
805 first superconducting layer
806 barrier layer
807 a second superconducting layer
807' Josephson junction region
808 second insulating layer
809 second via hole
810 third superconducting layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 11. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
The invention provides a balanced superconducting quantum interference device microwave amplifier, please refer to fig. 1, which shows a structural block diagram of the balanced superconducting quantum interference device microwave amplifier, comprising a first 3dB orthogonal directional coupler 100, a first impedance matching network 201, a second impedance matching network 202, a first superconducting quantum interference device 301, a second superconducting quantum interference device 302, a third impedance matching network 401, a fourth impedance matching network 402 and a second 3dB orthogonal directional coupler 500, wherein the first 3dB orthogonal directional coupler 100 is used for receiving an input signal; the first impedance matching network 201 and the second impedance matching network 202 are connected to the output end of the first 3dB quadrature directional coupler 100; the first superconducting quantum interference device 301 and the second superconducting quantum interference device 302 are respectively connected with the output end of the first impedance matching network 201 and the output end of the second impedance matching network 202; the third impedance matching network 401 and the fourth impedance matching network 402 are respectively connected with the output end of the first superconducting quantum interference device 301 and the output end of the second superconducting quantum interference device 302; the second 3dB quadrature directional coupler 500 is connected to the output terminal of the third impedance matching network 401 and the output terminal of the fourth impedance matching network 402, and configured to output a signal; the first 3dB quadrature directional coupler 100, the second 3dB quadrature directional coupler 500, the first impedance matching network 201, the second impedance matching network 202, the third impedance matching network 401, and the fourth impedance matching network 402 all include superconducting transmission line structures.
Specifically, the first 3dB orthogonal directional coupler 100 is configured to divide an input microwave signal into two paths of signals with equal power and a phase difference of 90 ° and output the two paths of signals to the first impedance matching network 201 and the second impedance matching network 202, respectively; the first impedance matching network 201 and the second impedance matching network 202 are respectively used for realizing impedance matching between the first 3dB orthogonal directional coupler 100 and the first superconducting quantum interference device 301 and the second superconducting quantum interference device 302 so as to realize maximum power transmission efficiency; the first superconducting quantum interference device 301 is configured to amplify the signal transmitted by the first impedance matching network 201 and the second impedance matching network 202 and output the signal to the third impedance matching network 401, and the second superconducting quantum interference device 302 is configured to amplify the signal transmitted by the second impedance matching network 202 and output the signal to the fourth impedance matching network 402; the third impedance matching network 401 and the fourth impedance matching network 402 are respectively used for realizing impedance matching among the first superconducting quantum interference device 301, the second superconducting quantum interference device 302 and the second 3dB orthogonal directional coupler 500 so as to realize maximum power transmission efficiency; the second 3dB orthogonal directional coupler 500 is configured to synthesize the two amplified microwave signals with 90 ° phase difference and equal power into one path of microwave signal, and output the path of microwave signal.
Specifically, the first 3dB orthogonal directional coupler 100 and the second 3dB orthogonal directional coupler 500 are implemented based on a superconducting transmission line structure of a planar micro-nano fabrication process, where the superconducting transmission line structure includes at least one of a superconducting microstrip line, a superconducting coplanar waveguide line, a superconducting stripline, and a superconducting coupled line, or other suitable forms.
As an example, the first 3dB orthogonal directional coupler 100 and the second 3dB orthogonal directional coupler 500 respectively include one of a branch line coupler, a coupled line coupler, and a lange coupler or other suitable configurations.
As an example, please refer to fig. 2, which shows a basic structure diagram of a branch line coupler based on a superconducting microstrip line, including an input port 601, an output port 602, an output port 603, and an isolation port 604, where corresponding S parameters are as follows:
as can be seen from the S parameter, all ports of the 3dB orthogonal directional coupler are matched with each other, and the input signal of the input port 601Power is distributed equally to output port 602 and output port 603 with a phase difference of 90 ° and no power is coupled to isolated port 604. The branch line coupler has a high degree of symmetry, and any port can be an input port, the output port always being on the opposite side of the input port of the network, and the isolated ports being the remaining ports on the same side of the input port. The characteristic impedance and electrical length of each section of transmission line are given in fig. 1 according to the existing branch line coupler design theory. The superconducting transmission line structure is realized by adopting a superconducting microstrip line, and the characteristic impedance Z0Set to 50 omega. λ represents the center frequency wavelength. The characteristic impedance and wavelength of the superconducting microstrip line can be calculated and extracted through software.
Specifically, each of the first and second superconducting quantum interference devices 301 and 302 includes a superconducting loop formed by two josephson junctions and a superconducting wire, and includes an input coupling coil for coupling an incident microwave signal and a magnetic field bias coil for biasing an amplifier magnetic field, which are located on or near the superconducting loop. In this embodiment, the first and second superconducting quantum interference devices 301 and 302 further include dc bias leads.
Particularly, the SQUID is a core unit of a balanced superconducting quantum interference device microwave amplifier, and the design of the SQUID needs to comply with the basic SQUID device design principle and also needs to be considered as the specific requirements of the microwave amplifier. The gain is one of the most important performance parameters of the microwave amplifier, and is the magnetic flux-voltage conversion coefficient V with SQUIDφIs in positive correlation with the coupling efficiency of the input microwave signal. To improve the magnetic flux voltage conversion coefficient VφIt is desirable to minimize josephson junction size within the process capability.
By way of example, the first superconducting quantum interference device 301 and the second superconducting quantum interference device 302 adopt the same structural design, and may adopt a zero-order gradient configuration, a first-order gradient configuration or a multi-order gradient configuration. In this embodiment, in order to improve the coupling efficiency of the input microwave signal and thus increase the gain of the amplifier, the first superconducting quantum interference device 301 and the second superconducting quantum interference device 302 preferably adopt a second-order gradient configuration design. The configuration not only can effectively improve the coupling efficiency of input signals, but also can effectively inhibit common-mode noise introduced by the environment and improve the performance of the microwave amplifier.
As an example, please refer to fig. 3, which shows a basic configuration diagram of a SQUID in a second-order gradient configuration, including a first josephson junction 701, a second josephson junction 702, a first resistance layer 703, a second resistance layer 704, a superconducting self-inductance loop, an input coupling coil, a magnetic field bias coil, and a lead structure, wherein the first josephson junction 701 and the second josephson junction 702 are connected in parallel by the superconducting self-inductance loop and the lead structure to form a superconducting loop, and the input coupling coil and the magnetic field bias coil are located in the superconducting loop. It is to be noted that the crossing portions of the partial superconductive wire stripes are staggered in the vertical direction, i.e. located in different superconductive layers. In other embodiments, the specific layouts of the superconducting self-inductance loop, the input coupling coil, the magnetic field bias coil, and the lead structure may be adjusted as desired.
Specifically, the impedance matching network is an important element to achieve maximum power transfer between the 3dB quadrature directional coupler and the SQUID. In this embodiment, the output impedance of the 3dB quadrature directional coupler is 50 Ω, and is naturally not matched to the input impedance of the SQUID device. For the input impedance of the SQUID, high-frequency simulation software such as Sonnet and the like can be adopted for analog simulation extraction, wherein the Josephson junction part can be equivalent to an RCSJ model. Other parts of the simulation circuit are modeled according to specific process parameters.
As an example, the first impedance matching network 201, the second impedance matching network 202, the third impedance matching network 401, and the fourth impedance matching network 402 are implemented based on a superconducting transmission line structure of a planar micro-nano fabrication process, where the superconducting transmission line structure includes at least one of a superconducting microstrip line, a superconducting coplanar waveguide line, a superconducting stripline, and a superconducting coupling line, or other suitable forms.
As an example, the first impedance matching network 201, the second impedance matching network 202, the third impedance matching network 401 and the fourth impedance matching network 402 each include a planar transmission line impedance transformation network, and the planar transmission line impedance transformation network includes one of a quarter-wavelength impedance transformation network, a high-low impedance transformation network and an asymptote impedance transformation network or other commonly used planar transmission line impedance transformation networks. In this embodiment, the first impedance matching network 201, the second impedance matching network 202, the third impedance matching network 401, and the fourth impedance matching network 402 preferably adopt 1/4 wavelength impedance transformers based on superconducting microstrip lines, and the impedance transformers have simple structures and simpler design methods.
Compared with a single-circuit SQUID microwave amplifier circuit, the SQUID microwave amplifier realized by adopting the balanced symmetric structure can not only greatly improve the input-output matching performance, expand the working bandwidth of the device and be easier to realize cascade connection; but also improves the amplifier saturation power and good stability.
Example two
The embodiment provides a method for preparing a balanced type superconducting quantum interference device microwave amplifier, which is used for preparing the balanced type superconducting quantum interference device microwave amplifier described in the first embodiment and comprises the following steps:
s1: providing a substrate, forming a resistance layer on the substrate, and patterning the resistance layer;
s2: forming a first insulating layer covering the resistance layer on the substrate, and forming a first via hole exposing the resistance layer in the first insulating layer;
s3: forming a first superconducting layer, a barrier layer and a second superconducting layer on the first insulating layer from bottom to top in sequence, wherein the first superconducting layer is further filled into the first via hole to be connected with the resistance layer;
s4: patterning the second superconducting layer to obtain a Josephson junction region;
s5: patterning the barrier layer, leaving portions of the barrier layer under the Josephson junction regions;
s6: patterning the first superconducting layer to obtain a loop and lead structure of the superconducting quantum interference device;
s7: forming a second insulating layer covering the second superconducting layer on the first superconducting layer, and forming a plurality of second via holes in the second insulating layer, wherein at least one second via hole exposes the second superconducting layer, and at least one second via hole exposes the first superconducting layer;
s8: and forming a third superconducting layer on the second insulating layer, and patterning the third superconducting layer, wherein the third superconducting layer is filled in the second via hole.
Referring to fig. 4, the step S1 is executed: a substrate 801 is provided, a resistive layer 802 is formed on the substrate 801, and the resistive layer 802 is patterned.
As an example, the substrate 801 includes a Si layer and SiO sequentially stacked from bottom to bottom2Layer, the resistive layer 802 is prepared on the SiO2On the layer. In other embodiments, the substrate 801 may also include a MgO substrate, Al2O3A substrate or other suitable substrate.
As an example, the resistive layer 802 includes at least one of a Mo layer, a TiPd layer, and a tiaoppd layer, or other suitable metal material layers. The resistance layer 802 may be formed by a sputtering process and a metal etching process, or may be formed by a metal lift-off process (lift-off).
Then, referring to fig. 5, the step S2 is executed: a first insulating layer 803 covering the resistive layer 802 is formed on the substrate 801, and a first via 804 exposing the resistive layer 802 is formed in the first insulating layer 803.
By way of example, the first insulating layer 803 is formed by chemical vapor deposition, physical vapor deposition, or other suitable method, and the first insulating layer 803 may include SiO2Any one of a layer, a SiO layer or a MgO layer, or other suitable insulating material layer.
As an example, the first via 804 is formed by a photolithography process and an etching process, and the etching process includes a dry etching and/or a wet etching.
Next, referring to fig. 6, the step S3 is executed: a first superconducting layer 805, a barrier layer 806, and a second superconducting layer 807 are sequentially formed on the first insulating layer 803 from bottom to top, and the first superconducting layer 805 is further filled in the first via hole 804 to connect the resistive layer 802.
As an example, the material of the first superconducting layer 805 includes Nb, NbN, Al, Ti, Mo, or other suitable superconducting material, the material of the barrier layer 806 includes alumina, aluminum nitride, or other suitable insulating material, and the material of the second superconducting layer 807 includes Nb, NbN, Al, Ti, Mo, or other suitable superconducting material. For example, the first superconducting layer/barrier layer/second superconducting layer may adopt any one of an Nb/Al-AlOx/Nb structure, an NbN/Al-AlOx/NbN structure, and an NbN/AlN/NbN structure, wherein Al-AlOx means that the barrier layer is obtained by growing an aluminum layer first and then oxidizing the aluminum layer, and different values of oxygen components x represent different degrees of oxidation. In other embodiments, other suitable material combinations may be used for the first/barrier/second superconducting layers.
Referring back to fig. 7, the step S4 is executed: the second superconducting layer 807 is patterned to obtain a josephson junction region 807'.
As an example, the second superconducting layer 807 may be patterned by a reactive ion etching process, an ion beam etching process, a lift-off process, a chemical etching process, or other suitable process to obtain the josephson junction region 807'.
Referring back to fig. 8, the step S5 is executed: the barrier layer 806 is patterned, leaving portions of the barrier layer 806 under the josephson junction 807'.
By way of example, the barrier layer 806 may be patterned by a reactive ion etching process, an ion beam etching process, a lift-off process, a chemical etching process, or other suitable process.
Referring back to fig. 9, the step S6 is executed: the first superconducting layer 805 is patterned to obtain a loop and lead structure of a superconducting quantum interference device.
By way of example, the first superconducting layer 805 may be patterned by a reactive ion etching process, an ion beam etching process, a lift-off process, a chemical etching process, or other suitable process.
Referring back to fig. 10, the step S7 is executed: forming a second insulating layer 808 covering the second superconducting layer 807 on the first superconducting layer 805, and forming a plurality of second vias 809 in the second insulating layer 808, wherein at least one of the second vias 809 exposes the second superconducting layer 807 to extract a top electrode of a josephson junction, and at least one of the second vias 809 exposes the first superconducting layer 805 to indirectly extract the resistive layer 802.
By way of example, the second insulating layer 808 may be formed by chemical vapor deposition, physical vapor deposition, or other suitable method, and the second insulating layer 808 may comprise SiO2Any one of a layer, a SiO layer or a MgO layer, or other suitable insulating material layer.
As an example, the second via hole 809 is formed through a photolithography process and an etching process, where the etching process includes dry etching and/or wet etching.
Referring back to fig. 11, the step S8 is executed: forming a third superconducting layer 810 on the second insulating layer 808, and patterning the third superconducting layer 810, wherein the third superconducting layer 810 is filled in the second via hole 809.
By way of example, the third superconducting layer 810 may be patterned by a reactive ion etching process, an ion beam etching process, a lift-off process, a chemical etching process, or other suitable process.
As an example, the superconducting transmission line structures of the first 3dB orthogonal directional coupler 100, the second 3dB orthogonal directional coupler 500, the first impedance matching network 201, the second impedance matching network 202, the third impedance matching network 401, and the fourth impedance matching network 402 are obtained based on patterning of the first superconducting layer 805 and/or the third superconducting layer 810, respectively. For example, the superconducting transmission line structure of the first 3dB orthogonal directional coupler 100 may be patterned by only the first superconducting layer 805 or the third superconducting layer 810, or may be partially patterned by the first superconducting layer 805 and partially patterned by the third superconducting layer 810, and portions of the first 3dB orthogonal directional coupler 100 located in different superconducting layers may be connected by vias. Similarly, the superconducting transmission line structures of the second 3dB quadrature directional coupler 500, the first impedance matching network 201, the second impedance matching network 202, the third impedance matching network 401, and the fourth impedance matching network 402 are also the same, and the description thereof is omitted here.
The preparation method of the balanced type superconducting quantum interference device microwave amplifier adopts a planar micro-nano preparation process to process and realize the preparation of the first 3dB orthogonal directional coupler 100, the first impedance matching network 201, the second impedance matching network 202, the first superconducting quantum interference device 301, the second superconducting quantum interference device 302, the third impedance matching network 401, the fourth impedance matching network 402 and the second 3dB orthogonal directional coupler 500, is compatible with the preparation processes of most conventional superconducting devices, and can greatly improve the integration level of related low-temperature detection systems.
In conclusion, the input and output ends of the whole circuit of the balanced superconducting quantum interference device microwave amplifier are symmetrical about the SQUID, namely, a balanced symmetrical structure is adopted, and compared with a single-path SQUID microwave amplifier circuit, the balanced SQUID microwave amplifier not only can greatly improve the input and output matching performance, expand the working bandwidth of the device and be easier to realize cascade connection; but also improves the amplifier saturation power and good stability. Meanwhile, the balanced SQUID microwave amplifier is processed and realized by adopting a planar micro-nano preparation process, is compatible with the preparation processes of most of the conventional superconducting devices, and can greatly improve the integration degree of a related low-temperature detection system. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be accomplished by those skilled in the art without departing from the spirit and scope of the present invention as set forth in the appended claims.
Claims (10)
1. A balanced superconducting quantum interference device microwave amplifier, comprising:
a first 3dB quadrature directional coupler for receiving an input signal;
the first impedance matching network and the second impedance matching network are connected with the output end of the first 3dB orthogonal directional coupler;
the first superconducting quantum interference device and the second superconducting quantum interference device are respectively connected with the output end of the first impedance matching network and the output end of the second impedance matching network;
the third impedance matching network and the fourth impedance matching network are respectively connected with the output end of the first superconducting quantum interference device and the output end of the second superconducting quantum interference device;
a second 3dB quadrature directional coupler, which is connected with the output end of the third impedance matching network and the output end of the fourth impedance matching network, and is used for outputting signals;
wherein the first 3dB quadrature directional coupler, the second 3dB quadrature directional coupler, the first impedance matching network, the second impedance matching network, the third impedance matching network, and the fourth impedance matching network all comprise superconducting transmission line structures.
2. The balanced superconducting quantum interference device microwave amplifier of claim 1, wherein: the first 3dB orthogonal directional coupler is used for dividing an input microwave signal into two paths of signals with equal power and 90-degree phase difference and respectively outputting the two paths of signals to the first impedance matching network and the second impedance matching network; the second 3dB orthogonal directional coupler is used for synthesizing the two amplified microwave signals with 90-degree phase difference and equal power into one path of microwave signal and outputting the microwave signal.
3. The balanced superconducting quantum interference device microwave amplifier of claim 1, wherein: the first 3dB orthogonal directional coupler and the second 3dB orthogonal directional coupler each include one of a branch line coupler, a coupled line coupler, and a lange coupler.
4. The balanced superconducting quantum interference device microwave amplifier of claim 1, wherein: the first, second, third and fourth impedance matching networks each comprise a planar transmission line impedance transformation network comprising one of a quarter-wavelength impedance transformation network, a high-low impedance transformation network and an asymptote impedance transformation network.
5. The balanced superconducting quantum interference device microwave amplifier of claim 1, wherein: the superconducting transmission line structure comprises at least one of a superconducting microstrip line, a superconducting coplanar waveguide line, a superconducting stripline and a superconducting coupling line.
6. The balanced superconducting quantum interference device microwave amplifier of claim 1, wherein: the first superconducting quantum interference device and the second superconducting quantum interference device each comprise a superconducting loop composed of two Josephson junctions and a superconducting wire, and comprise an input coupling coil and a magnetic field bias coil located on or near the superconducting loop, the input coupling coil being for coupling incident microwave signals, and the magnetic field bias coil being for biasing an amplifier magnetic field.
7. The balanced superconducting quantum interference device microwave amplifier of claim 1, wherein: the first superconducting quantum interference device and the second superconducting quantum interference device adopt a zero-order gradient configuration, a first-order gradient configuration or a multi-order gradient configuration.
8. A method for preparing a balanced superconducting quantum interference device microwave amplifier, which is used for preparing the balanced superconducting quantum interference device microwave amplifier as claimed in any one of claims 1 to 7, and is characterized by comprising the following steps:
providing a substrate, forming a resistance layer on the substrate, and patterning the resistance layer;
forming a first insulating layer covering the resistance layer on the substrate, and forming a first via hole exposing the resistance layer in the first insulating layer;
forming a first superconducting layer, a barrier layer and a second superconducting layer on the first insulating layer from bottom to top in sequence, wherein the first superconducting layer is further filled into the first via hole to be connected with the resistance layer;
patterning the second superconducting layer to obtain a Josephson junction region;
patterning the barrier layer, leaving portions of the barrier layer under the Josephson junction regions;
patterning the first superconducting layer to obtain a loop and lead structure of the superconducting quantum interference device;
forming a second insulating layer covering the second superconducting layer on the first superconducting layer, and forming a plurality of second via holes in the second insulating layer, wherein at least one second via hole exposes the second superconducting layer, and at least one second via hole exposes the first superconducting layer;
and forming a third superconducting layer on the second insulating layer, and patterning the third superconducting layer, wherein the third superconducting layer is filled in the second via hole.
9. The method for preparing a balanced type superconducting quantum interference device microwave amplifier according to claim 7, wherein the method comprises the following steps: the superconducting transmission line structures of the first 3dB orthogonal directional coupler, the second 3dB orthogonal directional coupler, the first impedance matching network, the second impedance matching network, the third impedance matching network, and the fourth impedance matching network are obtained based on patterning of the first superconducting layer and/or the third superconducting layer, respectively.
10. The method for preparing a balanced type superconducting quantum interference device microwave amplifier according to claim 7, wherein the method comprises the following steps: the substrate comprises a Si layer and SiO which are sequentially laminated from bottom to bottom2Layer, or the substrate comprises MgO substrate and Al2O3One of the substrates; the resistance layer comprises at least one of a Mo layer, a TiPd layer and a TiAuPd layer.
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| CN115411483A (en) * | 2022-11-02 | 2022-11-29 | 之江实验室 | A dual-mode quadrature power combiner based on integrated passive device technology |
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