CN114220748B - Dynamic detection device and chemical mechanical planarization equipment - Google Patents
Dynamic detection device and chemical mechanical planarization equipment Download PDFInfo
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- CN114220748B CN114220748B CN202210164369.0A CN202210164369A CN114220748B CN 114220748 B CN114220748 B CN 114220748B CN 202210164369 A CN202210164369 A CN 202210164369A CN 114220748 B CN114220748 B CN 114220748B
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- 238000001514 detection method Methods 0.000 title claims abstract description 34
- 239000000126 substance Substances 0.000 title claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 62
- 230000005540 biological transmission Effects 0.000 claims abstract description 55
- 238000001035 drying Methods 0.000 claims description 11
- 230000001680 brushing effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 183
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a dynamic detection device, comprising: a transmitting unit; the feedback unit is used for receiving the light beam emitted by the emitting unit; the transmitting unit and the feedback unit are respectively arranged on the wafer transmission hand or the wafer cleaning module; the emission unit and the feedback unit are respectively positioned at two sides of the wafer, and when the wafer is clamped on the wafer transmission hand, the wafer can block the light beam; the transmitting unit or the feedback unit moves along with the wafer transmission hand, can be matched with any feedback unit or transmitting unit of the wafer cleaning module, and is used for detecting whether a wafer is in a light path between the transmitting unit and the feedback unit so as to judge whether the wafer is clamped on the wafer transmission hand. The invention also discloses chemical mechanical planarization equipment. The invention can detect whether each or any wafer transmission hand clamps the wafer in real time; the moving channel of the wafer transmission hand cannot be blocked, so that the wafer transmission hand can move more flexibly; the dynamic detection is realized, and the detection can be selectively matched with any wafer cleaning module.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuit chip manufacturing equipment, and particularly relates to chemical mechanical planarization equipment for a dynamic detection device.
Background
A Chemical Mechanical Planarization (CMP) apparatus generally includes a semiconductor Equipment Front End Module (EFEM), a polishing unit, and a cleaning unit. In the working process of the existing cleaning unit, wafers are taken and placed by a wafer conveying hand to move among the cleaning modules, so that the wafers are guaranteed to complete corresponding cleaning processes in the cleaning modules.
The prior art generally adopts a method of installing a reflection sensor and a reflector or a correlation sensor receiving end on the leftmost side and the rightmost side of all cleaning modules respectively. When the wafer transmission hand takes and places the wafer from the cleaning module and passes through the set position, whether the wafer exists in the wafer transmission hand is judged according to the signal of the reflection sensor. The method can indirectly detect whether the wafer exists on the wafer transmission hand, but can not judge in real time. Particularly, when a plurality of wafer transmission hands simultaneously get wafers from the cleaning module, only the wafer transmission hands can be detected to have the wafers, and the wafer transmission hands can not be determined to have the wafers.
In some technical applications, a similar sensor is not used for detecting whether a wafer exists on a wafer transmission hand in real time, and the wafer is judged by adopting software logic.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a dynamic detection device and chemical mechanical planarization equipment, which can detect whether a wafer is on a wafer transmission hand in real time, and can avoid the problem that a plurality of wafer transmission hands simultaneously get a wafer in a wafer cleaning module and cannot judge which wafer transmission hand clamps the wafer.
The technical scheme adopted by the invention for solving the technical problems is as follows: a dynamic detection apparatus comprising:
a transmitting unit;
the feedback unit is used for receiving the light beam emitted by the emitting unit;
the transmitting unit and the feedback unit are respectively arranged on the wafer transmission hand or the wafer cleaning module;
the transmitting unit and the feedback unit are respectively positioned at two sides of the wafer, and when the wafer is clamped on the wafer transmission hand, the wafer can block the light beam;
the transmitting unit or the feedback unit moves along with the wafer transmission hand, can be matched with any feedback unit or transmitting unit of the wafer cleaning module, and is used for detecting whether a wafer exists in a light path between the transmitting unit and the feedback unit so as to judge whether the wafer is clamped on the wafer transmission hand.
Furthermore, the transmitting unit is arranged on the wafer transmission hand, and the feedback unit is arranged on the wafer cleaning module.
Furthermore, the wafer transmission hand is provided with a plurality of detection points, when the detection points are arranged, the light beam between the emission unit and the feedback unit is obliquely arranged, the included angle between the light beam and the plane of the wafer is alpha, and alpha is more than 0 degree and less than 80 degrees.
Further, the height difference between the transmitting unit and the feedback unit is 0-1 m.
Furthermore, the wafer transmission hand is provided with a plurality of detection points, and when the detection points are detected, the transmitting unit and the feedback unit are respectively positioned on two radial sides of the wafer and positioned in the same vertical plane with the wafer; or the emission unit and the feedback unit are respectively positioned at two radial sides of the wafer and are not positioned in the same vertical plane with the wafer.
Furthermore, the wafer transfer hands are one or two or more, and are movably arranged on the horizontal transverse shaft.
Furthermore, the number of the wafer cleaning modules is at least two, and the wafer cleaning modules are wafer megasonic cleaning modules, wafer brushing modules, wafer drying modules, wafer transition modules or combinations thereof.
Further, the feedback unit is a reflector; the emission unit is a reflection type optical sensor and is used for emitting light beams and receiving the light beams reflected back through the reflection plate.
Further, the transmitting unit and the feedback unit are a transmitting end and a receiving end of the correlation optical sensor.
Furthermore, the feedback unit is arranged outside the box body of the wafer cleaning module or on the longitudinal axis of the wafer transmission hand.
The invention also discloses chemical mechanical planarization equipment which comprises a polishing mechanism, a cleaning mechanism and a drying mechanism, wherein the dynamic detection device is arranged on the cleaning mechanism or the drying mechanism.
The invention has the beneficial effects that: 1) the transmitting unit or the feedback unit is arranged on the wafer transmission hand, the feedback unit or the transmitting unit is arranged on the wafer cleaning module, and whether a wafer is clamped on each or any wafer transmission hand or not is detected in real time; 2) when the transmitting unit is arranged on the wafer transmission hand, the feedback unit is arranged on the wafer cleaning module, and the feedback unit is a reflector, the detection cost is saved; 3) the installation positions of the transmitting unit and the feedback unit are arranged, so that the wafer transmission hand is prevented from interfering with the transmitting unit or the feedback unit in the horizontal moving process, namely, a moving channel of the wafer transmission hand cannot be blocked, the wafer transmission hand is more flexible to move, wafer collision caused by improper operation is avoided, and a good protection effect is formed on the wafer; 4) the light beam vertically irradiates on the wafer to detect the existence of the wafer in the prior art, the existence of the wafer can be detected only when the wafer on a wafer transmission hand is at a certain height, and the wafer cannot be detected when the wafer on the wafer transmission hand exceeds the height of the sensor; 5) in the prior art, in the process that a wafer moves along with a wafer conveying hand, corrosive liquid or water carried on the wafer can splash onto a sensor, so that the sensor is easily mistakenly reported and even damaged; 6) the wafer transmission hand translates along the horizontal transverse shaft, dynamic detection is realized, the wafer transmission hand can be selectively matched with any wafer cleaning module for detection, and a sensor is not required to be arranged on each wafer cleaning module in the prior art.
Drawings
Fig. 1 is a perspective view of a first embodiment of the present invention.
Fig. 2 is a top view of the first embodiment of the invention.
Fig. 3 is a perspective view of a second embodiment of the present invention.
Fig. 4 is a top view of a second embodiment of the invention (the beam is not blocked by the wafer).
FIG. 5 is a top view of a second embodiment of the present invention (the beam is blocked by the wafer).
Fig. 6 is a perspective view of a third embodiment of the present invention.
Fig. 7 is a top view of a third embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
A dynamic detection device comprises a transmitting unit 1 and a feedback unit 2, wherein the feedback unit 2 is used for receiving a light beam emitted by the transmitting unit 1. The transmitting unit 1 is arranged on the wafer transmission hand 4, specifically on the longitudinal axis 41 of the wafer transmission hand 4; the feedback unit 2 is disposed on the wafer cleaning module 5, specifically, disposed outside the box of the wafer cleaning module 5, but in other embodiments, an additional bracket may be disposed on the box of the wafer cleaning module 5, so as to fix the feedback unit 2 on the bracket.
The emitting unit 1 and the feedback unit 2 are respectively located at two sides of the wafer 6, and when the wafer 6 is clamped on the wafer transfer hand 4, the light beam 3 emitted by the emitting unit 1 is blocked by the wafer 6, specifically by the surface of the wafer 6.
The position of the wafer cleaning module 5 is relatively fixed, so that the transmitting unit 1 moves along with the wafer transmission hand 4, and can be matched with any feedback unit 2 of the wafer cleaning module 5, or matched with the feedback unit 2 of any wafer cleaning module 5, so as to detect whether a wafer 6 is in an optical path between the transmitting unit 1 and the feedback unit 2, and then judge whether the wafer 6 is clamped on the wafer transmission hand 4.
As shown in fig. 1-2, in the present embodiment, the number of the wafer transfer hands 4 is two, and the vertical axis 41 of each wafer transfer hand 4 is fixedly provided with the transmitting unit 1; the number of the wafer cleaning modules 5 is four, and a feedback unit is fixedly arranged on the outer side of the box body of each wafer cleaning module 5. Of course, in other embodiments, the wafer transfer hand 4 may be one or more. Of course, the number of the wafer cleaning modules 5 may be one or at least two, where the wafer cleaning module 5 refers to a wafer megasonic cleaning module, or refers to a wafer brushing module, or refers to a wafer drying module, or refers to a wafer transition module, or refers to a combination of a wafer megasonic cleaning module, a wafer brushing module, a wafer transition module, and a wafer drying module.
For example, the wafer cleaning module 5 in fig. 1 is sequentially a wafer transition module, a wafer megasonic cleaning module, a wafer brushing module and a wafer drying module from right to left. For another example, the wafer cleaning module 5 in fig. 1 is a wafer megasonic cleaning module, a wafer brushing module i, a wafer brushing module ii and a wafer drying module from right to left.
The two wafer transmission hands 4 can both translate along the horizontal axis 7, so that the transmitting unit 1 on the first wafer transmission hand 4 can be matched with the feedback unit 2 on the leftmost wafer cleaning module 5 to detect whether the wafer 6 is clamped on the wafer transmission hand 4 or not, and can also be matched with the feedback units on the two wafer cleaning modules 5 in the middle; the transmitting unit on the second wafer transmission hand can be matched with the feedback unit on the rightmost wafer cleaning module to detect whether the wafer is clamped on the wafer transmission hand or not, and can also be matched with the feedback units on the two wafer cleaning modules 5 in the middle, so that the application is flexible. Of course, when the horizontal axis 7 is long enough, both wafer transfer hands can be used with any one wafer cleaning module for inspection.
The wafer transfer hand 4 has a plurality of detection points, which means that the wafer transfer hand 4 stays at the position to detect whether the wafer exists or not during the movement on the horizontal axis 7. When detecting the point, the light beam 3 between the emitting unit 1 and the feedback unit 2 is obliquely arranged, and the included angle between the light beam 3 and the plane of the wafer 6 is alpha, 0 degrees < alpha < 80 degrees, as shown in fig. 2. In other words, the emission unit 1 and the feedback unit 2 are respectively located at two radial sides of the wafer 6, and are not located in the same vertical plane with the wafer 6, and both are located in an oblique line forming an included angle with the wafer 6.
The height difference between the emitting unit 1 and the feedback unit 2 is 0-1m, i.e. h =0-1m in fig. 1, i.e. the emitting unit 1 and the feedback unit 2 can be at the same height, in this case, it is only necessary to ensure that the light beam 3 between the emitting unit 1 and the feedback unit 2 is obliquely arranged. Of course, the transmitting unit 1 may be higher than the feedback unit 2, or the feedback unit 2 may be higher than the transmitting unit 1.
In the present embodiment, the feedback unit 2 is a reflector, the emitting unit 1 is a reflective optical sensor, and the emitting unit 1 is configured to emit a light beam 3 and receive the light beam reflected by the reflector. At this time, taking the direction shown in fig. 2 as an example for explanation, the emitting unit 1 is located at the left side of the wafer transferring hand 4, the feedback unit 2 is located at the right side of the box body of the wafer cleaning module 5, the emitting unit 1 emits the light beam 3, when the wafer 6 is clamped on the wafer transferring hand 4 located above the wafer cleaning module a 5, the light beam 3 is blocked by the wafer 6, the light beam 3 cannot return to the emitting unit 1, and the emitting unit 1 outputs a signal of the wafer. When the wafer 6 is not clamped on the wafer transfer hand 4 above the wafer cleaning module B5, the light beam 3 emitted by the emitting unit 1 irradiates the reflector, the light beam 3 can return to the emitting unit 1, and the emitting unit 1 outputs a signal that no wafer is present.
Certainly, the emitting unit 1 and the feedback unit 2 may also be an emitting end and a receiving end of the correlation optical sensor, at this time, when the wafer 6 is clamped on the wafer transmission hand 4, the light beam emitted by the emitting end is blocked by the wafer 6, and the receiving end outputs a signal of the wafer; when the wafer 6 is not clamped on the wafer transmission hand 4, the light beam emitted by the emitting end irradiates the receiving end, and the receiving end outputs a signal that the wafer is not clamped.
Example two
The difference between the first embodiment and the second embodiment is that, at the time of detecting the point, the transmitting unit 1 and the feedback unit 2 are located at two radial sides of the wafer 6 and located in the same vertical plane as the wafer 6, as shown in fig. 3 and 4. At this time, the light beam 3 emitted by the emitting unit 1 is blocked by the wafer 6, specifically, by the side surface of the wafer 6, where the side surface of the wafer 6 refers to the side surface in the thickness direction of the wafer 6 and is different from the surface of the wafer, as shown in fig. 5.
EXAMPLE III
The difference between the first embodiment and the second embodiment is that the positions of the transmitting unit 1 and the feedback unit 2 are interchanged, that is, the feedback unit 2 is disposed on the wafer transfer hand 4, specifically, on the longitudinal axis 41 of the wafer transfer hand 4; the transmitting unit 1 is disposed on the wafer cleaning module 5, specifically, on the outer side of the box body of the wafer cleaning module 5.
As shown in fig. 6 and 7, the emission unit 1 on the wafer cleaning module 5 emits the light beam 3, when the wafer 6 is clamped on the wafer transfer hand 4, the light beam 3 is blocked by the wafer 6, the light beam 3 cannot return to the emission unit 1, and the emission unit 1 outputs a signal of the wafer. When the wafer 6 is not clamped on the wafer transfer hand 4, the light beam 3 emitted by the emission unit 1 irradiates the feedback unit 2 on the wafer transfer hand 4, the light beam 3 can return to the emission unit 1, the emission unit 1 outputs a signal without the wafer, or the light beam 3 is received by the feedback unit 2 and outputs a signal without the wafer.
The rest is the same as the first embodiment, and is not described again.
Example four
The chemical mechanical planarization equipment comprises a polishing mechanism, a cleaning mechanism and a drying mechanism, wherein the cleaning mechanism is provided with the dynamic detection device, or the drying mechanism is provided with the dynamic detection device.
The foregoing detailed description is intended to illustrate and not limit the invention, which is intended to be within the spirit and scope of the appended claims, and any changes and modifications that fall within the true spirit and scope of the invention are intended to be covered by the following claims.
Claims (10)
1. A dynamic sensing apparatus, comprising:
a transmitting unit (1);
the feedback unit (2) is used for receiving the light beam (3) emitted by the emitting unit (1);
the transmitting unit (1) and the feedback unit (2) are respectively arranged on the wafer transmission hand (4) or the wafer cleaning module (5);
the emission unit (1) and the feedback unit (2) are respectively positioned at two sides of the wafer (6), and when the wafer (6) is clamped on the wafer transmission hand (4), the wafer (6) can block the light beam (3);
the transmitting unit (1) or the feedback unit (2) moves along with the wafer transmission hand (4), can be matched with any feedback unit (2) or transmitting unit (1) of the wafer cleaning module (5), and is used for detecting whether a wafer (6) exists in a light path between the transmitting unit and the feedback unit so as to judge whether the wafer (6) is clamped on the wafer transmission hand (4);
the wafer transmission hand (4) is provided with a plurality of detection points, the detection points refer to that the wafer transmission hand (4) can stay at the position to detect whether the wafer exists or not in the moving process of the horizontal transverse shaft (7), and when the detection points are adopted, the transmitting unit (1) and the feedback unit (2) are respectively positioned at two radial sides of the wafer (6) and are positioned in the same vertical plane with the wafer (6); or the emission unit (1) and the feedback unit (2) are respectively positioned at two radial sides of the wafer (6) and are not positioned in the same vertical plane with the wafer (6).
2. The dynamic detection device according to claim 1, wherein: the transmitting unit (1) is arranged on the wafer transmission hand (4), and the feedback unit (2) is arranged on the wafer cleaning module (5).
3. The dynamic detection device according to claim 1, characterized in that: the wafer transmission hand (4) is provided with a plurality of detection points, when the detection points are detected, the light beam (3) between the emission unit (1) and the feedback unit (2) is obliquely arranged, the included angle between the light beam and the plane of the wafer (6) is alpha, and alpha is more than 0 degree and less than 80 degrees.
4. The dynamic detection device according to claim 3, wherein: the height difference between the transmitting unit (1) and the feedback unit (2) is 0-1 m.
5. The dynamic detection device according to claim 1, wherein: the wafer transfer hands (4) are one or two or more and are movably arranged on the horizontal transverse shaft (7).
6. The dynamic detection device according to claim 1, wherein: the number of the wafer cleaning modules (5) is at least two, and the wafer cleaning modules are wafer megasonic cleaning modules, wafer brushing modules, wafer drying modules, wafer transition modules or combinations thereof.
7. The dynamic detection device according to claim 1, wherein: the feedback unit (2) is a reflector; the emitting unit (1) is a reflective optical sensor and is used for emitting a light beam (3) and receiving the light beam reflected back by the reflecting plate.
8. The dynamic detection device according to claim 1, wherein: the transmitting unit (1) and the feedback unit (2) are the transmitting end and the receiving end of the correlation type optical sensor.
9. The dynamic detection device according to claim 1, wherein: the feedback unit (2) is arranged outside a box body of the wafer cleaning module (5) or on a longitudinal shaft (41) of the wafer transmission hand (4).
10. The utility model provides a chemical mechanical planarization equipment, includes polishing mechanism, wiper mechanism, and dry mechanism, its characterized in that: the cleaning mechanism or the drying mechanism is provided with a dynamic detection device as claimed in any one of claims 1 to 9.
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