CN114216570B - Thermal imaging device and thermal imaging method - Google Patents
Thermal imaging device and thermal imaging method Download PDFInfo
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- CN114216570B CN114216570B CN202111500833.0A CN202111500833A CN114216570B CN 114216570 B CN114216570 B CN 114216570B CN 202111500833 A CN202111500833 A CN 202111500833A CN 114216570 B CN114216570 B CN 114216570B
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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Abstract
本申请属于半导体设备技术领域，尤其涉及一种热成像装置及热成像方法，热成像装置用于检测待测芯片的表面温度，热成像装置包括光源组件，用于发射预设波长的光线；反射组件，用于将光源所发出的光线反射至待测芯片表面的反射层；反射层，设置于待测芯片的表面，且反射层的禁带宽度小于光源所发出光线的能量；成像组件，用于接收经由反射层反射的光线并输出待测芯片表面的图像。本申请提供的热成像装置及热成像方法，利用禁带宽度小于光源组件的光线能量的反射层，来反映待测芯片的表面温度，有效解决了现有技术中因待测芯片的禁带宽度过大所导致的无法对待测芯片表面进行热反射成像的问题，满足芯片的热反射成像测温需求。
The present application belongs to the field of semiconductor equipment technology, and particularly relates to a thermal imaging device and a thermal imaging method. The thermal imaging device is used to detect the surface temperature of a chip to be tested. The thermal imaging device includes a light source component for emitting light of a preset wavelength; a reflective component for reflecting the light emitted by the light source to a reflective layer on the surface of the chip to be tested; the reflective layer is arranged on the surface of the chip to be tested, and the bandgap width of the reflective layer is less than the energy of the light emitted by the light source; and an imaging component is used to receive the light reflected by the reflective layer and output an image of the surface of the chip to be tested. The thermal imaging device and the thermal imaging method provided by the present application use a reflective layer with a bandgap width less than the light energy of the light source component to reflect the surface temperature of the chip to be tested, which effectively solves the problem in the prior art that the thermal reflection imaging of the surface of the chip to be tested cannot be performed due to the excessively large bandgap of the chip to be tested, and meets the thermal reflection imaging temperature measurement requirements of the chip.
Description
Technical Field
The application belongs to the field of semiconductor equipment, and particularly relates to a thermal imaging device and a thermal imaging method.
Background
Semiconductor chips are one of the modern computing core components that are critical to implementing modern computing architectures, power electronics, rewritable media, and data storage and transmission. However, as the performance of these chips continues to increase, feature sizes supporting the main functional elements (e.g., transistors, etc.) are becoming smaller and smaller. Self-heating of the chip is a critical bottleneck to be solved urgently, as the physical limit in terms of chip size leads to failure of moore's law. Efficient thermal design and thermal management of chips requires knowledge of the temperature distribution and junction temperature of the chip, and the key to how to accurately measure the temperature of the chip is a very important technology for efficient microscopic thermal reflection imaging of the chip.
At present, although a silicon-based chip is the main stream of the existing semiconductor chip, the wide forbidden band and ultra-wide forbidden band semiconductor fields represented by gallium nitride (GaN), silicon carbide (SiC) and diamond are in the development stage from development to comprehensive application, and the characteristics of wide forbidden band and transparency to visible light cause great challenges to the optical temperature measurement technology of the traditional semiconductor such as a silicon device. The existing thermal reflection imaging device generally adopts light rays in a visible light wave band to detect (for example, green light with the common wavelength of 532 nm), but because the energy of the light rays is far smaller than the forbidden band width (the forbidden band width is about 3.2 eV) of semiconductors such as gallium nitride and the like, the light rays are transparent to a wide forbidden band chip and cannot be subjected to thermal reflection imaging, and development of novel temperature measurement and microscopic thermal reflection imaging technologies for the wide forbidden band semiconductor devices is urgently needed.
Disclosure of Invention
The embodiment of the application aims to provide a thermal imaging device and a thermal imaging method, which are used for solving the technical problem that a thermal imaging device in the prior art is difficult to perform thermal reflection imaging on a wide forbidden band chip.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the application is as follows:
in one aspect, an embodiment of the present application provides a thermal imaging apparatus for detecting a surface temperature of a chip to be measured, including:
the light source assembly is used for emitting light rays with preset wavelengths;
the reflection layer is arranged on the surface of the chip to be tested, and the forbidden bandwidth of the reflection layer is smaller than the energy of light rays emitted by the light source;
the reflecting component is used for reflecting the light rays emitted by the light source to the reflecting layer on the surface of the chip to be detected;
and the imaging component is used for receiving the light reflected by the reflecting layer and outputting an image of the surface of the chip to be detected.
Optionally, the reflective layer is a transition metal sulfide layer.
Optionally, the reflective layer is a molybdenum disulfide layer.
Optionally, the light source assembly comprises a light source and a lens group for expanding and collimating light emitted by the light source.
Optionally, the light source is a visible light source, and/or the light source is an incoherent light source.
Optionally, the thermal imaging device further comprises a focusing mirror located between the reflecting component and the chip under test.
Optionally, the thermal imaging device further comprises an autofocus assembly for placing the chip to be tested and for autofocus.
Compared with the prior art, the thermal imaging device provided by the embodiment of the application can be used for measuring the surface temperature of the chip to be measured, the light source component emits light rays with preset wavelength, meanwhile, the energy of the forbidden band width of the reflecting layer is smaller than that of the light rays, so that the reflecting layer can reflect the light rays to the imaging component, and finally, the imaging component outputs an image of the surface of the chip to be measured, thereby obtaining the temperature information of the surface of the chip to be measured. Therefore, the surface temperature of the chip to be detected is reflected by the reflecting layer on the surface of the chip to be detected, the problem that light rays directly penetrate the chip to be detected due to the fact that the forbidden bandwidth of the material of the chip to be detected is larger than the light energy of the light source component is effectively solved, and the thermal reflection imaging device can also conduct thermal reflection imaging on the chip with the wide forbidden bandwidth.
On the other hand, the embodiment of the application also provides a thermal imaging method, which adopts the thermal imaging device and comprises the following steps:
the preparation step comprises the steps of preparing the reflecting layer and transferring the reflecting layer to the surface of the chip to be tested;
The calibration step, the light source component emits light to the chip to be measured under different temperatures respectively, the light is reflected to the imaging component through the reflecting layer, the imaging component outputs images under different temperatures respectively, and the thermal reflection coefficient of the reflecting layer is obtained according to the gray value change of the images under different temperatures;
And a thermal imaging step, namely placing the chip to be detected into the thermal imaging device and electrifying the chip to be detected so as to acquire an image under the current condition, and acquiring a temperature distribution image under the current condition according to the image information before electrifying the chip to be detected and the thermal reflection coefficient of the reflecting layer.
Alternatively, a transition metal sulfide is grown on a substrate by chemical vapor deposition, and a single layer of the transition metal sulfide is peeled off from the substrate to obtain the reflective layer.
Optionally, in the calibration step, the chip to be tested is heated to different temperatures by using a heating component, and at least images of the chip to be tested at two different temperatures are obtained through testing.
Compared with the prior art, the thermal imaging method provided by the embodiment of the application has the advantages that the thermal imaging device is used for carrying out thermal reflection imaging on the chip to be detected, the reflection layer with the forbidden band width smaller than the light energy of the light source assembly is used for reflecting the surface temperature of the chip to be detected, the problem that the chip to be detected cannot be subjected to thermal reflection imaging due to the fact that the forbidden band width of the chip to be detected is overlarge in the prior art is effectively solved, and the thermal reflection imaging temperature measurement requirement of the chip is met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a thermal imaging apparatus according to an embodiment of the present application.
Wherein, each reference sign in the figure:
10. the device comprises a light source component, 11, a light source, 12, a lens group, 20, a reflecting component, 21, a reflecting mirror, 30, an imaging component, 40, an automatic focusing component, 50, a focusing mirror, 60, a chip to be tested, 61 and a reflecting layer.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are merely for convenience in describing and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The individual features and examples described in the specific embodiments can be combined in any suitable manner, without contradiction, for example, different embodiments can be formed by different combinations of the specific features/examples/embodiments, and various possible combinations of the individual features/examples/embodiments in the present application are not described further in order to avoid unnecessary repetition.
At present, the existing thermal imaging device generally adopts light rays in a visible light band to detect (for example, green light with a common wavelength of 532 nm), but because the energy of the light rays is far smaller than the forbidden band width (the forbidden band width is about 3.2 eV) of semiconductors such as gallium nitride, the light rays are transparent to a wide forbidden band chip, and can not carry out thermal reflection imaging on the surface of the wide forbidden band chip. In the existing thermal imaging devices, ultraviolet light sources are selected for imaging, so that various optical devices in the thermal imaging devices are required to have ultraviolet light high-transmittance performance, imaging components with great quantum efficiency for ultraviolet light are required, and in consideration of the fact that conventional semiconductor materials are required to adopt visible light for thermal reflection imaging, light sources with different wavelengths and corresponding light path elements are required to be switched for devices based on different semiconductor materials, the complexity and the device cost of equipment are greatly increased, and popularization and application are difficult.
Therefore, the embodiment of the application provides a thermal imaging device and a thermal imaging method, which can perform thermal reflection imaging on a semiconductor chip with a wide forbidden band, and can be also applied to a traditional semiconductor chip, so as to solve the technical problem that the thermal imaging device in the prior art is difficult to perform thermal reflection imaging on the chip with the wide forbidden band.
Referring to fig. 1, the thermal imaging apparatus provided in the embodiment of the present application includes a light source assembly 10, a reflective layer 61, a reflective assembly 20 and an imaging assembly 30, and specifically, when the imaging apparatus of the embodiment is used for detecting the temperature of the surface of a chip 60 to be detected, the chip 60 to be detected may be placed on a detection station first, and the reflective layer 61 prepared in advance may be disposed on the surface of the chip. And then the light source assembly 10 is used for emitting light with preset wavelength, the energy of the light is higher than the forbidden bandwidth of the reflecting layer 61, the light can be irradiated onto the reflecting assembly 20, the reflecting assembly 20 reflects the light onto the reflecting layer 61 on the surface of the chip 60 to be detected, the light can be irradiated onto the imaging assembly 30 after being reflected by the reflecting layer 61, and the imaging assembly 30 is used for outputting an image on the surface of the chip 60 to be detected, so that the temperature information of the surface of the chip 60 to be detected is obtained. Through such design, the surface temperature of the chip 60 to be measured is reflected by the reflecting layer 61 on the surface of the chip 60 to be measured, and the reflecting layer 61 is not transparent to light due to the fact that the forbidden bandwidth of the reflecting layer 61 is smaller than the light energy of the light source 11, and can effectively reflect the light onto the imaging component 30, so that even if the forbidden bandwidth of the chip 60 to be measured is larger than the light energy of the light source 11, the light cannot be influenced to be reflected and imaged on the reflecting layer 61 on the surface of the chip 60 to be measured, and the problem that the conventional thermal imaging device is difficult to be suitable for temperature measurement of a wide forbidden bandwidth chip is effectively solved. Meanwhile, when the chip 60 to be measured with different forbidden bandwidths is measured, the light source 11 lamp device in the thermal imaging device is not required to be replaced, the complexity and the device cost of the thermal imaging device are effectively reduced, and the thermal imaging device has the characteristics of simple structure and convenience in operation.
As an alternative implementation manner of this embodiment, the reflective layer 61 may be a transition metal sulfide layer, specifically, a two-dimensional layered material of the transition metal sulfide has a forbidden band width of about 1.5eV, and the forbidden band energy is lower than the light energy of the conventional light source assembly 10, such as a conventional green light with a wavelength of 532nm, and the transition metal sulfide does not interfere with the electrical performance of the chip 60 to be tested, so as to ensure the normal operation of the chip 60 to be tested. Thus, the light of the light source assembly 10 can be reflected by the reflecting layer 61 on the surface of the chip, so as to obtain the temperature data of the surface of the chip 60 to be measured.
Specifically, as an alternative implementation of this embodiment, the reflective layer 61 may be a molybdenum disulfide layer, and of course, the reflective layer 61 may be made of other suitable materials, such as tungsten disulfide, etc. In a specific application, the reflective layer 61 may be a single layer of molybdenum disulfide, and the thickness of the reflective layer may be within a nanometer scale, so when the reflective layer 61 is transferred to the surface of the chip 60 to be detected, the reflective layer 61 with an extremely thin thickness can be tightly attached to the surface of the chip to be detected, so that the reflective layer 61 can effectively reflect the surface temperature of the chip 60 to be detected, and the detection accuracy is improved.
As an alternative implementation of this embodiment, please refer to fig. 1, the light source assembly 10 includes a light source 11 and a lens assembly 12, the lens assembly 12 may be located between the light source 11 and the reflecting assembly 20, and the light emitted by the light source 11 may be first irradiated onto the reflecting assembly 20 through the lens assembly 12, so that the light of the light source 11 may be expanded and collimated by the lens assembly 12, which is beneficial to improving the accuracy of the thermal imaging device.
Specifically, as an alternative implementation manner of this embodiment, the Light source 11 may be a visible Light source, and specifically, the Light source 11 is capable of Emitting Light in a visible Light band, for example, a green LED (Light-Emitting Diode) Light source Emitting Light with a wavelength of 532nm, so that the optical components such as the lens group 12, the reflection assembly 20 and the imaging device in the thermal imaging device may be selected from optical components in the existing visible Light thermal imaging device, without having high transmittance to ultraviolet Light, so as to reduce the cost of the thermal imaging device, and also facilitate the measurement of the conventional semiconductor chip by the thermal imaging device without changing each component, thereby improving the practicality of the thermal imaging device.
In a specific application, the chip 60 to be detected in the embodiment may be a gallium nitride chip, a silicon carbide chip, a zinc oxide chip or a diamond chip, and the semiconductor chip has a wide forbidden band width, is transparent to general visible light, and cannot be effectively imaged by using the visible light, while the reflective layer 61 in the embodiment can reflect the surface temperature of the semiconductor chip, is opaque to the visible light, and can image on the imaging component 30. Of course, the chip 60 to be tested according to the present embodiment may be a conventional semiconductor chip, such as a silicon-based chip, a germanium-based chip, or the like, and in the case of such a chip 60 to be tested, the reflective layer 61 may be provided on the surface thereof, or the reflective layer 61 may not be provided.
Specifically, as an alternative implementation manner of this embodiment, the light source 11 may be an incoherent light source, and the light emitted by the light source 11 has incoherence, so that the interference effect of the reflective layer 61 on the light can be reduced, and the measurement accuracy of the thermal imaging device is improved.
As an alternative implementation of this embodiment, referring to fig. 1, the thermal imaging apparatus further includes a focusing mirror 50, where the focusing mirror 50 may be disposed between the reflecting component 20 and the chip 60 to be tested, and the focusing mirror 50 may focus the light reflected by the reflecting component 20 onto the reflecting layer 61 on the surface of the chip 60 to be tested, so as to facilitate improving the thermal imaging precision.
As an alternative implementation of this embodiment, please refer to fig. 1, the thermal imaging apparatus further includes an autofocus assembly 40, in a specific application, when the chip 60 to be tested is tested, the chip 60 to be tested may be placed on the autofocus assembly 40, the autofocus assembly 40 may adjust the relative position of the chip 60 to be tested and the imaging assembly 30, specifically, the autofocus assembly 40 may move the chip 60 to be tested along a horizontal direction or a vertical direction, so that the surface of the chip 60 to be tested may be located at the focal point of the imaging assembly 30, and a clear image may be obtained. In addition, when the chip 60 to be tested is powered on and operates and generates heat, the chip 60 to be tested may expand, and the autofocus assembly 40 may adjust the position of the chip 60 to be tested, so that the imaging assembly 30 may obtain a clear image, and accordingly, when the chip 60 to be tested is cooled and recovered, the autofocus assembly 40 may also adjust the position to ensure the definition of the image output by the imaging assembly 30.
As an alternative implementation of this embodiment, referring to fig. 1, the reflecting component 20 includes a reflecting mirror 21, specifically, the reflecting mirror 21 may be a beam splitter, the beam splitter may be disposed obliquely, the light source 11 may be disposed vertically with respect to the chip 60 to be tested (the light irradiated by the light source 11 is perpendicular to the light reflected by the beam splitter to the chip 60 to be tested), and the chip 60 to be tested may be disposed opposite to the imaging component 30. Thus, when the light of the light source 11 irradiates the beam splitter, the beam splitter can reflect the light onto the reflecting layer 61 of the chip 60 to be tested, and the light can fall on the imaging assembly 30 through the beam splitter after being reflected by the reflecting layer 61. Of course, in other embodiments, the relative positions of the light source assembly 10, the chip under test 60, the imaging assembly 30 and the reflecting assembly 20 can be reasonably adjusted according to the actual situation, and the present embodiment is not limited thereto.
As an alternative implementation of this embodiment, the imaging component 30 may be an area-array camera, and when the light reflected by the reflective layer 61 irradiates the area-array camera, the area-array camera may output a corresponding image. In a specific application, the area-array camera may be a CCD (Charge-coupled Device) camera, or may be a CMOS (Complementary Metal Oxide Semiconductor ) camera.
Compared with the prior art, the thermal imaging device provided by the embodiment of the application can be used for measuring the surface temperature of the chip 60 to be measured, the light source assembly 10 emits light rays with preset wavelength, the light rays are reflected to the reflecting layer 61 on the surface of the chip 60 to be measured through the reflecting assembly 20, the surface temperature of the chip 60 to be measured is reflected through the reflecting layer 61, meanwhile, the reflecting layer 61 can reflect the light rays to the imaging assembly 30 due to the fact that the forbidden band width of the reflecting layer 61 is smaller than the energy of the light rays, and finally the imaging assembly 30 outputs images of the surface of the chip 60 to be measured, so that the temperature information of the surface of the chip 60 to be measured is obtained. In this way, the surface temperature of the chip 60 to be measured is reflected by the reflecting layer 61 on the surface of the chip 60 to be measured, so that the problem that light rays directly penetrate through the chip 60 to be measured due to the fact that the forbidden bandwidth of the chip 60 to be measured is larger than the light ray energy of the light source assembly 10 is effectively solved, and the thermal imaging device can also perform thermal reflection imaging on the wide forbidden bandwidth chip.
The embodiment of the application also provides a thermal imaging method, which adopts the thermal imaging device and comprises the following steps:
A preparation step of preparing a reflecting layer 61 and transferring the reflecting layer 61 to the surface of the chip 60 to be tested;
A calibration step, in which the light source assembly 10 emits light to the chips 60 to be tested at different temperatures, the light is reflected to the imaging assembly 30 through the reflecting layer 61, the imaging assembly 30 outputs images at different temperatures, and the thermal reflection coefficient of the reflecting layer 61 is obtained according to the gray value change of the images at different temperatures;
and a thermal imaging step of placing the chip 60 to be tested into a thermal imaging device to acquire an image under the current condition and obtaining a temperature distribution image under the current condition according to the thermal reflection coefficient of the reflecting layer 61.
In a specific application, a suitable material for the reflective layer 61 may be selected according to a specific type of the chip 60 to be tested, for example, a gallium nitride chip, and since the forbidden bandwidth of gallium nitride is wider, visible light is transparent to such a chip, the reflective layer 61 with a narrower forbidden bandwidth may be prepared in advance. After the reflective layer 61 is prepared, the reflective layer 61 may be transferred onto the surface of the chip 60 under test, and the chip 60 under test may be placed on the autofocus assembly 40, with the autofocus assembly 40 adjusting the position of the chip 60 under test at room temperature (e.g., 25 degrees celsius). At this time, the chip 60 to be tested is in a non-energized state, the light source assembly 10 emits light, the light is reflected onto the chip 60 to be tested by the reflecting assembly 20, the reflecting layer 61 on the surface of the chip 60 to be tested reflects the light onto the imaging assembly 30, and the imaging assembly 30 outputs an image of the chip 60 to be tested in the non-energized state. Then, the chip 60 to be measured is heated, the real-time temperature of the chip 60 to be measured at the side of the temperature measuring part is passed, and the position of the chip 60 to be measured is adjusted by the autofocus assembly 40, so that the imaging assembly 30 outputs an image at the current temperature. Finally, according to the gray value change of the images before and after heating, the thermal reflection coefficient of the reflecting layer 61 (namely the corresponding relation between the gray value and the temperature of the image) is obtained, and the image and the temperature can be acquired for multiple times under different conditions, so that more accurate thermal reflection coefficient can be acquired, and the error is reduced.
Then, the chip 60 to be tested provided with the reflecting layer 61 can be electrified under different conditions, so that the chip 60 to be tested runs and is self-heating, the position of the chip 60 to be tested is adjusted, a corresponding image is output, then, the temperature distribution under the current condition can be obtained according to the image information before the chip 60 to be tested is electrified and the thermal reflection coefficient obtained in the calibration step, and the final thermal image of the chip 60 to be tested is rendered by different colors through software. Thus, after the thermal reflection coefficient of the reflecting layer 61 is obtained, the temperature distribution image of the chip 60 to be tested can be directly obtained according to the image output by the imaging component 30, so that the problem that the wide-belt chip is difficult to perform thermal reflection imaging in the prior art is effectively solved, and the imaging cost is reduced.
As an alternative implementation manner of this embodiment, in the calibration step, the corresponding relationship between the image and the temperature of the chip 60 to be measured may be obtained under at least two sets of different temperature conditions to obtain the thermal reflection coefficient of the reflective layer 61, where the two sets of different conditions may be that the chip to be measured is heated to a preset temperature by a heating component (e.g. a heating table) in a normal temperature state, or that the chip to be measured is heated to two different preset temperatures by the heating component, respectively, and in order to improve the accuracy of the thermal reflection coefficient, the corresponding relationship between the image and the temperature of the chip 60 to be measured under multiple sets of different conditions may be obtained to reduce the error of the thermal reflection coefficient. In addition, in order to further improve the accuracy of the thermal reflection coefficient, each time the imaging is performed at a preset temperature, the imaging may be performed at that temperature a plurality of times to reduce the noise error of the imaging assembly 30.
As an alternative embodiment of the present example, in the preparation step of the reflective layer 61, a single layer of transition metal sulfide may be grown on the substrate by chemical vapor deposition, and the single layer of transition metal sulfide may be peeled off from the substrate to obtain the reflective layer 61.
In specific applications, a suitable material for the reflective layer 61 may be selected according to the type of the chip 60 to be tested and the type of the light source assembly 10, and by taking the reflective layer 61 as a molybdenum disulfide layer as an example, mo (CO) 6 (diluted to 15torr in nitrogen) may be used as a metal precursor for molybdenum disulfide growth, at room temperature (C 2H5)2 S as a sulfur source, and nitrogen and hydrogen as carrier gases, a growth temperature of 525 ℃ for 15h to 20h, and an organic chemical vapor deposition may be used to grow a large area of molybdenum disulfide on a SiO 2/Si substrate of a hot wall tube furnace, then PMMA (polymethyl methacrylate, 495k,4% anisole) may be spin-coated on the molybdenum disulfide layer, the spin-coating time may be 60S, and baked at 180 ℃ for about 3min.
Compared with the prior art, the thermal imaging method provided by the embodiment of the application has the advantages that the thermal imaging device is used for carrying out thermal reflection imaging on the chip 60 to be detected, the reflection layer 61 with the forbidden band width smaller than the light energy of the light source assembly 10 is used for reflecting the surface temperature of the chip 60 to be detected, the problem that the chip 60 to be detected cannot be subjected to thermal reflection imaging due to the fact that the forbidden band width of the chip 60 to be detected is overlarge in the prior art is effectively solved, and the thermal reflection imaging temperature measurement requirement of the chip is met.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (9)
1. A thermal imaging apparatus for detecting a surface temperature of a chip to be measured, comprising:
the light source assembly is used for emitting light rays with preset wavelengths, and the light source is a visible light source;
the reflection layer is arranged on the surface of the chip to be tested, and the forbidden bandwidth of the reflection layer is smaller than the energy of light rays emitted by the light source;
the reflecting component is used for reflecting the light rays emitted by the light source to the reflecting layer on the surface of the chip to be detected;
the imaging component is used for receiving the light reflected by the reflecting layer and outputting an image of the surface of the chip to be detected;
the chip to be tested is a gallium nitride chip, a silicon carbide chip, a zinc oxide chip or a diamond chip.
2. The thermal imaging device of claim 1, wherein the reflective layer is a molybdenum disulfide layer.
3. The thermal imaging apparatus of claim 1, wherein the light source assembly comprises a light source and a lens assembly for expanding and collimating light rays emitted by the light source.
4. A thermal imaging apparatus according to claim 3, wherein the light source is a non-coherent light source.
5. The thermal imaging apparatus of any of claims 1 to 4, further comprising a focusing mirror between the reflective assembly and the chip under test.
6. The thermal imaging apparatus of any of claims 1 to 4, further comprising an autofocus assembly for placing a chip under test and for autofocus.
7. A thermal imaging method, characterized in that the thermal imaging apparatus according to any one of claims 1 to 6 is employed, comprising the steps of:
the preparation step comprises the steps of preparing the reflecting layer and transferring the reflecting layer to the surface of the chip to be tested;
The calibration step, the light source component emits light to the chip to be measured under different temperatures respectively, the light is reflected to the imaging component through the reflecting layer, the imaging component outputs images under different temperatures respectively, and the thermal reflection coefficient of the reflecting layer is obtained according to the gray value change of the images under different temperatures;
and a thermal imaging step, namely placing the chip to be detected into the thermal imaging device and electrifying the chip to be detected so as to acquire an image under the current condition, and acquiring a temperature distribution image under the current condition according to the thermal reflection coefficient of the reflecting layer of the image information before electrifying the chip to be detected.
8. The thermal imaging method of claim 7, wherein a single layer of transition metal sulfide is stripped from a substrate by chemical vapor deposition to obtain the reflective layer.
9. The thermal imaging method of claim 8, wherein in the calibrating step, the chip under test is heated to different temperatures by a heating member and at least images of the chip under test at two different temperatures are acquired by testing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111500833.0A CN114216570B (en) | 2021-12-09 | 2021-12-09 | Thermal imaging device and thermal imaging method |
Applications Claiming Priority (1)
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