CN114178683B - Method for efficiently processing heterogeneous material by composite laser - Google Patents

Abstract

The invention discloses a method for efficient processing of heterogeneous materials by composite laser. The multi-wavelength laser with photothermal and photochemical effects is adopted, and the laser irradiation with specific parameters is combined with the real-time monitoring of spectral parameters and the regulation of laser parameters. High-speed machining of heterogeneous materials. It solves the problems that laser processing of heterogeneous materials is easy to damage the low-threshold phase or part, it is difficult to achieve the optimal parameter matching of each phase or each part for specific processing, the processing effect is difficult to control in real time, and the processing process is difficult to carry out at high speed.

Description

Method for efficiently processing heterogeneous material by composite laser

Technical Field

The invention relates to the technical field of laser processing, in particular to a method for efficiently processing a heterogeneous material by composite laser.

Background

The laser processing technology is characterized in that the energy of light is focused by a lens and then can reach high energy density near a focus, the material is processed by virtue of photo-thermal or photochemical effects, and the laser processing technology becomes an important advanced material processing method because the laser processing technology does not need to contact the material, has small surface deformation and is suitable for various materials.

Laser machining can be broadly classified into laser thermal machining and photochemical reaction machining according to the mechanism of interaction between a laser beam and a material. Laser thermal processing refers to a processing process which is completed by utilizing a thermal effect generated by projecting a laser beam on the surface of a material, and photochemical reaction processing refers to a processing process in which the laser beam irradiates an object and the photochemical reaction is initiated or controlled by high energy of high-density laser. Due to the limitation of a laser excitation principle on a laser, most of the existing laser irradiation based on a thermal effect is high in speed, but a caused thermal effect area is large, so that the original micro-nano structure of a material cannot be reserved; the laser based on photochemistry needs to adopt a short wavelength or short pulse mode, has high precision and small thermal effect, but has low irradiation efficiency. Meanwhile, no matter which action mode is adopted, the laser has great limitation in processing heterogeneous materials, and the response of each phase or each area of the heterogeneous materials to the laser, such as the absorptivity and the like, has difference, so that the quality consistency of the laser processing is seriously influenced; in addition, the melting point and other physical and chemical properties of the heterogeneous material are different, so that the physical and chemical states of each phase or each part are different under the same energy density irradiation condition, and most of the heterogeneous materials are difficult to meet the processing threshold of all the phases or parts without causing other changes during processing.

Therefore, laser processing of heterogeneous materials currently has the following problems: (1) it is difficult to ensure high processing efficiency; (2) the part with a lower threshold value in the heterogeneous material is easily influenced, and transitional ablation is caused or the original special micro-nano structure is damaged; (3) the parameter range used for processing is the comprehensive result of the parameters of all phases or all parts, but not the optimal parameter range for realizing specific processing of all phases or all parts, so that the overall processing quality is poor; (4) the processing effect cannot be regulated and controlled in real time.

Disclosure of Invention

In order to overcome the above-mentioned technical problems, the present invention aims to provide a method for efficiently processing a heterogeneous material by using a composite laser, which uses a multi-wavelength laser with photothermal and photochemical effects, and realizes high-speed processing of the heterogeneous material by using laser irradiation with specific parameters and combining real-time monitoring of spectral parameters and laser parameter regulation and control. The method solves the problems that the laser processing heterogeneous material is easy to damage the low threshold phase or part, the optimization parameter matching of each phase or each part aiming at specific processing is difficult to realize, the processing effect is difficult to regulate and control in real time, and the processing process is difficult to carry out at high speed.

In order to achieve the purpose, the invention adopts the following technical scheme:

a method for efficiently processing a heterogeneous material by composite laser comprises the following specific steps:

(1) determining the phase P of the most abundant heterogeneous material to be processed _M Phase P with highest lasing threshold _FM Phase P with lowest lasing threshold _Fm ；

(2) According to the most abundant phase P _M Phase P with highest lasing threshold _FM And minimum threshold of laser actionPhase P of _Fm The absorption rate of ultraviolet light-infrared light is selected, and an ultraviolet light wavelength L1 with the highest relative absorption rate and an infrared light wavelength L2 with the highest relative absorption rate are selected;

(3) determination of the most abundant phase P _M Respectively corresponding to ultraviolet light wavelength L1 and infrared light wavelength L2 at different irradiation densities, such as phase P with the highest content _M Damage threshold value F of _th (P _M )、1.5*F _th (P _M )、2*F _th (P _M ) Depth of irradiation D at constant _M Width of irradiation B _M Width E of the region affected by irradiation _M Until reaching a certain multiple a, using a damage threshold (a +0.5) × F _th (P _M ) Depth of action of applied radiation D _M Width of irradiation B _M Width E of the region affected by irradiation _M The processing requirements are not met, and the phase P with the maximum content of the processing heterogeneous material with the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtained _M Respectively corresponding to the highest laser irradiation density a 1F _th (P _M ，L1)、a2*F _th (P _M ，L2)；

(4) Determining the phase P with the highest lasing threshold _FM Corresponding to the ultraviolet light wavelength L1 and the infrared light wavelength L2 in different irradiation densities, such as the phase P with the highest laser action threshold _FM Damage threshold value F of _th (P _FM )、1.5*F _th (P _FM )、 2*F _th (P _FM ) Depth of irradiation D under the like _FM Width of irradiation B _FM Width E of the region affected by irradiation _FM Until a certain multiple b is reached, a damage threshold (b +0.5) × F is used _th (P _FM ) Depth of action of applied radiation D _FM Width of irradiation B _FM Width E of the region affected by irradiation _FM The processing requirements are not met, and the phase P with the highest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtained _FM Respective highest laser irradiation density b 1F _th (P _FM ，L1)，b2*F _th (P _FM ，L2)；

(5) Determining the phase P with the lowest lasing threshold _Fm Corresponding to ultraviolet wavelength L1, redThe external light wavelength L2 is in different irradiation densities, such as the phase P with the lowest laser action threshold _Fm Damage threshold value F of _th (P _Fm )、1.5*F _th (P _Fm )、 2*F _th (P _Fm ) Depth of irradiation D under the like _Fm Width of irradiation B _Fm Width E of region affected by irradiation _Fm Until reaching a certain multiple c, a damage threshold (c +0.5) × F is used _th Depth of action of applied radiation D _Fm Width of irradiation B _Fm Width E of region affected by irradiation _Fm The processing requirements are not met, and the phase P with the lowest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtained _Fm Respective highest laser irradiation density c 1F _th (P _Fm ，L1)、c2*F _th (P _Fm ，L2)；

(6) When the most abundant phase P is present in the heterogeneous material to be processed _M Phase P with lowest lasing threshold _Fm When the laser with infrared wavelength L2 is used, c 2F is adopted _th (P _Fm L2) laser irradiation density to process the heterogeneous material to be processed, and realizing the phase P with the lowest laser action threshold value in the processing area _Fm Monitoring the peak position and the peak value of the laser induced spectrum in real time by adopting a spectrum device, and entering the step (7); phase P in maximum content in the heterogeneous material to be processed _M Phase P not having the lowest lasing threshold _Fm Then, entering the step (11);

(7) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2F _th (P _Fm L2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;

(8) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density x F under the action of the corresponding ultraviolet light wavelength L1 _th (P _FM L1), irradiation width D under the action of the laser irradiation density _M Width E of region affected by irradiation _M When the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;

(9) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density x F _th (P _FM L1) until all recorded surfaces have been machined;

(10) adopting ultraviolet light wavelength L1 and laser irradiation density F _th (P _FM L1), setting the light spot to the minimum state with a diaphragm, and implementing the minimum light spot scanning processing on the recording position until the change of the laser-induced spectrum peak value no longer occurs;

(11) when the most abundant phase P is present in the heterogeneous material to be processed _M Phase P with highest threshold for lasing _FM Comparison c 2F _th (P _Fm L2) and F _th (P _FM L2), if c 2F _th (P _Fm ，L2)>F _th (P _M L2), using the infrared light wavelength L2, laser irradiation density c2 x F _th (P _Fm L2) processing the heterogeneous material to be processed, monitoring the peak position and peak value of the laser induced spectrum in real time by adopting a spectrum device, and entering the step (12); if c 2F _th (P _Fm ，L2)<F _th (P _FM L2), go to step (15); phase P in maximum content in the heterogeneous material to be processed _M Not of the phase P with the highest lasing threshold _FM If yes, entering step (20);

(12) when the peak position of the monitored laser induced spectrum changes or the peak value is reduced by 10 percent or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2F _th (P _Fm L2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;

(13) the recorded position is calculated by using the wavelength L2 of infrared light and the irradiation density F of laser _th (P _FM L2) processing the recorded area; using the wavelength L2 of infrared light and the laser irradiation density F _th (P _FM L2), until all surfaces to be processed have been processed, monitoring the peak position and peak value of its laser-induced spectrum in real time by using a spectroscopic device;

(14) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density a 1F _th (P _FM L1) until no change in the peak value of the laser-induced spectrum occurs;

(15) if c 2F _th (P _Fm ，L2)<F _th (P _FM L2), using uv light wavelength L1, laser irradiation density c1 x F _th (P _Fm L1) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser-induced spectrum in real time by using a spectrum device;

(16) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density c 1F _th (P _Fm L1) irradiating the heterogeneous material with laser light until all surfaces to be machined have been machined;

(17) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density y x F under the action of the corresponding ultraviolet wavelength L1 _th (P _FM L1), irradiation width D under the irradiation density of the laser light _M Width E of region affected by irradiation _M When the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;

(18) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet wavelength L1 and laser irradiation density y F _th (P _FM L1) until all marks are reachedThe recorded surfaces are processed;

(19) adopting ultraviolet light wavelength L1 and laser irradiation density F _th (P _FM L1) the processing of the recording position is effected until no change in the peak value of the laser-induced spectrum occurs anymore;

(20) when the maximum content of phase P in the heterogeneous material to be processed is reached _M Phase P not having the highest lasing threshold _FM Or not the phase P with the lowest lasing threshold _Fm Selecting the wavelength L2 of infrared light and the laser irradiation density c 2F _th (P _Fm L2) nearest x F _th (P _M L2) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser induced spectrum in real time by using a spectrum device;

(21) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density x F _th (P _M L2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;

(22) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density z x F under the action of the corresponding ultraviolet light wavelength L1 _th (P _M L1), irradiation width D under the action of the laser irradiation density _M Width E of region affected by irradiation _M When the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;

(23) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; adopting ultraviolet light wavelength L1 and laser irradiation density z x F _th (P _M L1) until all recorded surfaces have been machined;

(24) adopting ultraviolet light wavelength L1 and laser irradiation density F _th (P _FM L1), the diaphragm is used to set the light spot to the minimum state, and the maximum to the recording position is achievedAnd scanning and processing the small light spot until the change of the laser-induced spectrum peak value does not occur.

Compared with the prior art, the invention has the following beneficial effects:

(1) the laser processing method has the advantages that the multi-wavelength laser with photo-thermal and photochemical effects is adopted as the laser source, laser parameters suitable for processing various heterogeneous materials including ceramics, metals, composite materials, porous materials, organic matters and the like can be reasonably matched, the advantages of high-speed repetition frequency of thermal effect laser megahertz or continuous irradiation and the advantages of high-resolution and low-influence area of photochemical effect laser are fully utilized, and the laser processing method can be suitable for various processing requirements such as punching, cutting, polishing and the like;

(2) by adopting laser irradiation with specific parameters and through differential classification and removal of parameters of each phase or each part, optimal parameter setting of each phase or each part can be realized, the loss of low-melting-point, volatile and other low-laser irradiation damage threshold materials in the processing process is reduced, and the high-quality processing quality is ensured;

(3) the consumption condition of a processed phase or part of the processing process is monitored through real-time laser-induced breakdown spectroscopy measurement of the processing process, laser parameters (energy, defocusing amount and the like) are regulated and controlled in real time according to information such as spectral peak positions, peak values and the like, and the processing effect is improved through real-time regulation and control of the processing process;

(4) the technical scheme provided by the invention can be suitable for processing various heterogeneous materials, has high efficiency and good processing quality, and is easy to realize automation and batch production.

Drawings

FIG. 1 shows a composite surface polished with a composite laser.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings in conjunction with specific examples of composite laser surface polishing of SiC fiber reinforced resin matrix composites.

(1) Determining the phase P of the most abundant heterogeneous material to be processed _M The resin phase and the phase P with the highest laser action threshold _FM Phase P with lowest threshold for SiC fibre and laser action _Fm Is a resin phase;

(2) selecting the two phases to have a relative highest absorbance ultraviolet wavelength L1 of 193nm and a relative highest absorbance infrared wavelength L2 of 1064 nm;

(3) the resin phase with the most content is respectively corresponding to the irradiation action depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densities _M Width of irradiation B _M Width E of the region affected by irradiation _M The parameters are as follows, wherein the processing depth, action width and influence area width of the process requirement are respectively 1 μm, unlimited and 10 μm, thereby obtaining the highest energy density of 6.0J/cm respectively corresponding to the ultraviolet light wavelength L1 and the infrared light wavelength L2 for processing the heterogeneous material ² (P _M ，L1)、750KW/cm2(P _M ，L2)；

(4) Determining irradiation depth D of the phase SiC fibers with the highest laser action threshold under different irradiation densities corresponding to the ultraviolet light wavelength L1 and the infrared light wavelength L2 _FM Width of irradiation B _FM Width E of the region affected by irradiation _FM The parameters are as follows, wherein the processing depth, action width and influence area width of the process requirement are respectively 1 μm, and are not limited to 10 μm, thereby obtaining the highest energy density of 7.0J/cm respectively corresponding to the composite laser wavelength L1 and L2 for processing the heterogeneous material ² (P _FM ，L1)，1400KW/cm ² (P _FM ，L2)；

(5) The phase P with the maximum content in the SiC fiber reinforced composite material to be processed _M Phase P with lowest lasing threshold _Fm Directly using a laser with a wavelength of 1064nm and adopting 750W/cm ² (P _Fm L2) laser irradiation density to process the heterogeneous material to realize the laser irradiation densityPhase P with lowest laser action threshold in machining region _Fm The processing of (3) and monitoring the peak position and peak value of the laser induced spectrum in real time by adopting a spectrum device;

(7) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using 1064nm laser with 750W/cm wavelength ² (P _Fm L2) irradiating the heterogeneous material with laser of the laser irradiation parameters until all surfaces to be processed have been processed;

(8) calculating the recorded position, calculating the average width K of the recorded position to be 32 μm, and searching corresponding x F _th (P _FM ，L1)＝1.0J/cm ² Processing an area with the recording area size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;

(9) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; adopting 1064nm laser, 750W/cm ² (P _Fm L2) irradiating the heterogeneous material with laser light of the laser irradiation parameters until all recorded surfaces have been processed;

(10) using a 193nm wavelength of 0.4J/cm ² (P _FM L1) laser irradiation density, setting the spot to the minimum state with a diaphragm, and realizing minimum spot scanning processing for the recording position until no change in the laser-induced spectral peak value occurs any more.

As shown in fig. 1, it can be seen from the figure that the surface processing of the SiC fiber reinforced resin matrix composite material can be realized without damaging the fiber by adopting the laser irradiation with specific parameters, combining the real-time monitoring of the spectral parameters and the laser parameter regulation and control, and the advantages of the invention can be embodied.

Claims (1)

1. A method for efficiently processing heterogeneous materials by composite laser is characterized by comprising the following steps: the method comprises the following specific steps:

(1) determining the phase P of the most abundant heterogeneous material to be processed _M Laser threshold of actionHighest value phase P _FM Phase P with lowest lasing threshold _Fm ；

(2) According to the most abundant phase P _M Phase P with highest lasing threshold _FM Phase P with lowest lasing threshold _Fm The absorption rate of ultraviolet light-infrared light is selected, and an ultraviolet light wavelength L1 with the highest relative absorption rate and an infrared light wavelength L2 with the highest relative absorption rate are selected;

(3) determination of the most abundant phase P _M Respectively corresponding to the irradiation depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densities _M Width of irradiation B _M Width E of the region affected by irradiation _M Until reaching a certain multiple a, using a damage threshold (a +0.5) × F _th (P _M ) Depth of action of applied radiation D _M Width of irradiation B _M Width E of the region affected by irradiation _M The processing requirements are not met, and the phase P with the maximum content of the processing heterogeneous material with the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtained _M Respective highest laser irradiation density a 1F _th (P _M ，L1)、a2*F _th (P _M ，L2)；

(4) Determining the phase P with the highest lasing threshold _FM Corresponding to the irradiation depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densities _FM Width of irradiation B _FM Width E of the region affected by irradiation _FM Until a certain multiple b is reached, a damage threshold value (b +0.5) F is adopted _th (P _FM ) Depth of action of applied radiation D _FM Width of irradiation B _FM Width E of region affected by irradiation _FM The processing requirements are not met, and the phase P with the highest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtained _FM Respective highest laser irradiation density b 1F _th (P _FM ，L1)，b2*F _th (P _FM ，L2)；

(5) Determining the phase P with the lowest lasing threshold _Fm Corresponding to the irradiation depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densities _Fm Width of irradiation B _Fm Width E of the region affected by irradiation _Fm Until a certain multiple c is reached, a damage threshold (c +0.5) × F is used _th (P _FM ) Depth of action of applied radiation D _Fm Width of irradiation B _Fm Width E of the region affected by irradiation _Fm The processing requirements are not met, and the phase P with the lowest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtained _Fm Respective highest laser irradiation density c 1F _th (P _Fm ，L1)、c2*F _th (P _Fm ，L2)；

(6) When the most abundant phase P is present in the heterogeneous material to be processed _M Phase P with lowest lasing threshold _Fm When the laser with infrared wavelength L2 is used, c 2F is adopted _th (P _Fm L2) laser irradiation density to process the heterogeneous material to be processed, and realizing the phase P with the lowest laser action threshold in the processing area _Fm Monitoring the peak position and the peak value of the laser induced spectrum in real time by adopting a spectrum device, and entering the step (7); when the maximum content of phase P in the heterogeneous material to be processed is reached _M Phase P not having the lowest lasing threshold _Fm Then, entering the step (11);

(7) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2F _th (P _Fm L2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;

(8) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density x F under the action of the corresponding ultraviolet light wavelength L1 _th (P _FM L1), irradiation width B under the irradiation density of the laser light _M Width E of region affected by irradiation _M When the sum is close to and not higher than the average width K, processing the area of which the recording position size is larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;

(9) when the peak position of the monitored laser-induced spectrum changes, or the peak value changesRecording the position corresponding to the change when the concentration is 10% or more; using ultraviolet light wavelength L1 and laser irradiation density x F _th (P _FM L1) until all recorded surfaces have been machined;

(10) adopting ultraviolet light wavelength L1 and laser irradiation density F _th (P _FM L1), setting the light spot to the minimum state with a diaphragm, and implementing the minimum light spot scanning processing on the recording position until the change of the laser-induced spectrum peak value no longer occurs;

(11) when the most abundant phase P is present in the heterogeneous material to be processed _M Phase P with highest lasing threshold _FM Comparison c2 x F _th (P _Fm L2) and F _th (P _FM L2), if c 2F _th (P _Fm ，L2)>F _th (P _FM L2), using the infrared light wavelength L2, laser irradiation density c2 x F _th (P _Fm L2) processing the heterogeneous material to be processed, monitoring the peak position and peak value of the laser induced spectrum in real time by adopting a spectrum device, and entering the step (12); if c 2F _th (P _Fm ，L2)<F _th (P _FM L2), go to step (15); when the maximum content of phase P in the heterogeneous material to be processed is reached _M Not of the phase P with the highest lasing threshold _FM Then, entering the step (20);

(12) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2F _th (P _Fm L2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;

(13) the recorded position is calculated by using the infrared light wavelength L2 and the laser irradiation density F _th (P _FM L2) processing the recorded area; using the wavelength L2 of infrared light and the laser irradiation density F _th (P _FM L2) until all surfaces to be processed have been processed, and monitoring the peak position and peak value of its laser-induced spectrum in real time by using spectral equipment；

(14) When the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density a 1F _th (P _FM L1) until no change in the laser-induced spectral peak value occurs anymore;

(15) using ultraviolet light wavelength L1 and laser irradiation density c 1F _th (P _Fm L1) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser-induced spectrum in real time by using a spectrum device;

(16) when the peak position of the monitored laser induced spectrum changes or the peak value is reduced by 10 percent or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density c 1F _th (P _Fm L1) irradiating the heterogeneous material with laser light until all surfaces to be machined have been machined;

(17) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density y x F under the action of the corresponding ultraviolet light wavelength L1 _th (P _FM L1), irradiation width B under the action of the laser irradiation density _M Width E of region affected by irradiation _M When the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;

(18) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density y x F _th (P _FM L1) until all recorded surfaces have been machined;

(19) adopting ultraviolet light wavelength L1 and laser irradiation density F _th (P _FM L1) the processing of the recorded position is effected until no change in the laser-induced spectral peak occurs anymore;

(20) selecting the wavelength L2 of infrared light and the laser irradiation density c 2F _th (P _Fm L2) nearest x F _th (P _M L2) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser induced spectrum in real time by using a spectrum device;

(21) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density x F _th (P _M L2) irradiating the heterogeneous material with laser light until all surfaces to be processed have been processed;

(22) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density z x F under the action of the corresponding ultraviolet light wavelength L1 _th (P _M L1), irradiation width B under the action of the laser irradiation density _M Width E of region affected by irradiation _M When the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;

(23) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; adopting ultraviolet light wavelength L1 and laser irradiation density z x F _th (P _M L1) until all recorded surfaces have been machined;

(24) adopting ultraviolet light wavelength L1 and laser irradiation density F _th (P _FM L1), with the diaphragm setting the spot to the minimum state, minimum spot scanning processing for the recording position is realized until no change in the laser-induced spectral peak value occurs anymore.

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