CN114175278A - Wafer solar cell, solar module and method for producing a wafer solar cell - Google Patents
Wafer solar cell, solar module and method for producing a wafer solar cell Download PDFInfo
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- CN114175278A CN114175278A CN202080055280.XA CN202080055280A CN114175278A CN 114175278 A CN114175278 A CN 114175278A CN 202080055280 A CN202080055280 A CN 202080055280A CN 114175278 A CN114175278 A CN 114175278A
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
本发明涉及一种晶片太阳能电池(100)，其包括具有正面(11)和背面(12)的半导体基板(1)、设置在背面(12)上的选自由至少一个介电层、至少一个半导体层、至少一个透明导电层组成的组的至少一个功能层(2)、设置在至少一个功能层(2)的背离背面(12)的一侧上并且选自由折射率小于1.7的层、在红外线中的在1000nm波长处具有超过的80％的反射率的白色层以及均质金属层组成的组的单片构成的光反射层(3)、以及设置在光反射层(3)的背离至少一个功能层(2)的一侧上的含金属粒子的金属化层(4)。本发明还涉及一种具有多个这种晶片太阳能电池(100)的太阳能模块以及一种用于制造这种晶片太阳能电池(100)的方法。
The invention relates to a wafer solar cell (100) comprising a semiconductor substrate (1) having a front side (11) and a back side (12), a semiconductor substrate (1) arranged on the back side (12) selected from at least one dielectric layer, at least one semiconductor layer, at least one functional layer (2) of the group consisting of at least one transparent conductive layer, arranged on the side of the at least one functional layer (2) facing away from the rear surface (12) and selected from layers with a refractive index of less than 1.7, in the infrared A monolithic light-reflecting layer (3) of a group consisting of a white layer having a reflectivity of more than 80% at a wavelength of 1000 nm and a homogeneous metal layer, and at least one of the light-reflecting layers disposed away from the light-reflecting layer (3) A metallization layer (4) containing metal particles on one side of the functional layer (2). The invention also relates to a solar module having a plurality of such wafer solar cells (100) and a method for manufacturing such wafer solar cells (100).
Description
Technical Field
The invention relates to a wafer solar cell, a solar module and a method for producing a wafer solar cell.
Background
Wafer solar cells have a processed semiconductor substrate, usually in the form of a silicon wafer, which has a front side and a rear side, on which further functional layers are respectively arranged in addition to a p-n layer present inside the semiconductor substrate. A wafer solar cell is an electronic component that converts sunlight incident on its front side, and in the case of a bifacial cell also incident on the back side, directly into electrical energy. For commercial use of this effect, wafer solar cells connected to one another are constructed as solar modules. Such solar modules usually have a glass pane on which wafer solar cells are arranged as so-called strings, which are electrically connected to one another, which are glued on the rear side with a permanently weather-resistant plastic film or alternatively with another glass pane and are therefore encapsulated. The wafer solar cell is laminated between a glass sheet and a plastic film or a second glass sheet, for example by using EVA (ethylene vinyl acetate) or as another example using a polyolefin as an embedding polymer. The glass sheet constitutes the solar module front side of the solar module, onto which light is irradiated, and the weatherable plastic film or the second glass sheet constitutes the solar module back side.
At least one functional layer selected from the group of dielectric layer(s), semiconductor layer(s) and/or transparent conductive layer(s) is disposed on the back side of the semiconductor substrate. It is emphasized here that, as a rule, there are a plurality of functional layers,
wherein the functional layers are here dielectric, semiconducting or transparent conductive layers or a combination of a plurality of these options. Full-area or non-full-area, i.e. structured, metallization layers are also provided on the at least one functional layer. For example, in the case of so-called PERC (cell with passivated emitter and passivated back) solar cells, at least one functional layer, usually in the form of a plurality of dielectric layers, is for example designed such that a metallization layer for contacting the semiconductor substrate contacts the semiconductor substrate over a portion of the region through the dielectric layers and constitutes, below the contact region, a so-called local back surface field, abbreviated BSF, which optimizes the function of the wafer solar cell. In another example, for example when using passivation contacts such as TOPCON (tunnel oxide passivation contact) or heterojunction solar cells, the metallization layers are located on the semiconductor and/or transparent conductive back side layers and the layers themselves are designed such that they enable charge transport from the semiconductor substrate to the back side metal contacts. The metallization layer is usually applied to the semiconductor substrate by means of a paste containing metal particles. The applied paste is then "fired", i.e. subjected to a heat treatment step. During firing, the metal particles of the paste sinter into a layer of macroscopically homogeneous appearance. However, the metallization layer is microscopically inhomogeneous in its structure.
In the context of the present invention, the expression "heterogeneous" with respect to the back metallization layer means that, viewed microscopically, intermediate spaces filled with air or other substances, such as glass, are formed between the metal particles inhomogeneously distributed in the layer. The average size of the metal particles is in the range of several micrometers to several tens of micrometers. These metal particles are sintered into a microscopically inhomogeneous metallised layer by the heat treatment step described above.
Light incident on the wafer solar cell from the front side passes through the semiconductor substrate unless photons are absorbed by the photoelectric effect. Light that once passed through the semiconductor substrate may be reflected from the back side region of the wafer solar cell back to the semiconductor substrate where it is again absorbed. This light or back reflection is caused in particular by the back-side functional layers and the interfaces of these functional layers with the metal contacts or other adjoining layers. However, this reflection is dependent on the precursor metallization layer used to fabricate the metallization layer and is relatively poor. This results in an inherent loss in the short circuit current (Jsc) at the battery level. Also, in the non-metallized areas, back side reflection is adversely affected by the junction of the encapsulant material with respect to air. Therefore, if wafer solar cells are packaged into solar modules, additional Jsc loss may occur. The more important these backside reflection properties are, the thinner the semiconductor substrate of the wafer solar cell is, since the proportion of light absorbed when first passing through the semiconductor substrate decreases with decreasing wafer thickness and thus the proportion of light reaching the backside of the wafer increases with decreasing wafer thickness.
Disclosure of Invention
It is therefore an object of the present invention to provide a wafer solar cell, a solar module and a method for producing a wafer solar cell with further improved short-circuit current characteristics.
According to the invention, this problem is solved by a wafer solar cell having the features of claim 1, a solar module having the features of claim 13 and a method for producing a wafer solar cell having the features of claim 14. Advantageous embodiments and refinements of the invention emerge from the dependent claims described below.
The invention relates to a wafer solar cell, which comprises
A semiconductor substrate having a front side and a back side, at least one functional layer disposed on the back side, the at least one functional layer selected from the group consisting of:
-at least one dielectric layer,
-at least one semiconductor layer,
-at least one transparent electrically conductive layer,
a monolithically formed light-reflecting layer which is arranged on the side of the at least one functional layer facing away from the rear side and is selected from the group consisting of:
-a layer having a refractive index of less than 1.7,
a white layer in the infrared, said white layer having a reflectivity of more than 80% at a wavelength of 1000nm, and a homogeneous metal layer,
and
a metallization layer containing metal particles, which is arranged on the side of the light-reflecting layer facing away from the at least one functional layer.
By such a structure with a monolithically constructed light-reflecting layer, the optical changes in the back-side metallization are decoupled from the solar cell properties and the light reflection can be carried out independently of the laminate used for manufacturing the solar module. Through the light-reflecting layer, an additional, good light-reflecting layer is introduced into the solar cell structure in order to bring light that once passed through the semiconductor substrate back into the semiconductor substrate, thereby increasing the short-circuit current of the solar cell. The light-reflecting layer is preferably configured in the form of a layer having a refractive index of less than 1.7, or in the form of a white layer in the infrared having a reflectivity of more than 80% at a wavelength of 1000nm, or in the form of a homogeneous metal layer.
In the context of the present invention, the backside metallization layer comprising metal particles needs to be considered separately from the homogeneous metal layer. Also on a microscopic scale, homogeneously structured metal layers are usually produced in monolithic composites by suitable deposition processes, for example physical and/or chemical deposition via the gas phase.
The semiconductor substrate is preferably a silicon wafer substrate. The silicon wafer substrate may be monocrystalline or polycrystalline.
At least one functional layer may have one or more dielectric layers. The at least one dielectric layer arranged on the rear side is preferably a transparent passivation layer. The at least one dielectric layer arranged on the rear side is more preferably an NIR (near infrared) transparent passivation layer(s). More preferably, the at least one dielectric layer is configured as one or more AlOx layers, one or more SiNx layers and/or one or more SiNxOy layers. More preferably, the wafer solar cell has an AlOx layer and a SiNx layer as dielectric layers disposed on the back surface, wherein the AlOx layer is disposed between the semiconductor substrate and the SiNx layer. In a preferred embodiment, the wafer solar cell is thus configured as a PERC solar cell. The refractive index of the AlOx layer is preferably in the range of 1.5 to 1.7. The refractive index of the SiNx layer is preferably in the range of 1.9 to 2.4. The refractive index of the SiOxNy layer is preferably in the range of 1.5 to 1.9. All refractive indices described are measured according to DIN at a wavelength of 632 nm.
Alternatively, at least one functional layer can have one or more semiconductor layers. The at least one semiconductor layer arranged on the rear side is preferably a doped layer to create charge carrier selectivity. Preferably, the at least one doped semiconductor layer is designed as a layer stack comprising a plurality of layers of different or even no doping concentration and/or having a dielectric layer and a semiconductor layer. In this case, the undoped layer is preferably thin and is disposed directly on the semiconductor substrate and the doped semiconductor layer is disposed thereon. Alternatively or additionally, the doped semiconductor layer is formed as a combination of a preferably thin dielectric layer, preferably AlOx, SiOx or SiCx, between the doped semiconductor layer and the semiconductor substrate. Alternatively or additionally, the SiNx layer or layers are preferably formed on the side of the doped semiconductor layer(s) facing away from the semiconductor substrate and/or the SiNxOy layer or layers are preferably formed on the side of the doped semiconductor layer(s) facing away from the semiconductor substrate.
In a further preferred embodiment, the wafer solar cell is thus constructed as a TOPCON or Heterojunction solar cell, which is also referred to as a HIT (Heterojunction with Intrinsic Thin layer) solar cell. The layer thickness of the layer between the doped semiconductor layer and the semiconductor substrate is preferably from one to a few nanometers. The refractive index of the doped semiconductor layer is preferably between 3.6 and 4.6. The refractive index of the SiNx layer is preferably in the range of 1.9 to 2.4. The refractive index of the SiOxNy layer is preferably in the range of 1.5 to 1.9. All refractive indices described are measured according to DIN at a wavelength of 632 nm.
In a first variant, the monolithically constructed light-reflecting layer is constructed as a layer having a refractive index of less than 1.7. In order to realize a light-reflecting layer of a layer with a refractive index of less than 1.7 in a monolithic construction, a microscopically inhomogeneous glass bead-air mixture can be used. The monolithically formed light-reflecting layer is preferably formed as a layer having a refractive index of less than 1.5, and even more preferably less than 1.3. All refractive indices described are measured according to DIN at a wavelength of 632 nm. Such a layer is constructed in a light-reflecting manner by the step change in the refractive index that has been achieved. Thereby, the optical change in the back side metallization is disconnected from the solar cell characteristics, for example during the encapsulation of the solar module.
In a second variant, the monolithically constructed light-reflecting layer is constructed as a white layer having a reflectivity of more than 80% at a wavelength of 1000nm in the infrared. The light-reflecting layer of monolithic construction, which is constructed as a white layer in the infrared, preferably has a reflectivity of more than 60% at a wavelength of 1000nm, more preferably a reflectivity of more than 40% at a wavelength of 1000 nm. Such a layer is also constructed to be light-reflective. Thereby, the optical change in the back side metallization is disconnected from the solar cell characteristics, for example during the encapsulation of the solar module.
In a third variant, the monolithically constructed light-reflecting layer is constructed as a homogeneous metal layer. In the sense of the present invention, a homogeneous metal layer is a microscopically homogeneous layer made of metal, i.e. a metal layer which is constructed without intermediate spaces or gaps. The homogeneous metal layer may be realized, for example, by a PVD process, such as sputtering or vapor deposition. The expression "homogeneous" means that microscopic observation cannot identify the metal particles, and therefore the metal particles are homogeneously developed under microscopic observation. The metal layer is preferably smooth, i.e. specularly or substantially smoothly structured. The metal layer provides strong light reflection characteristics.
The back side metallization layer is realized by a paste containing minute metal particles therein. The backside metallization layer is therefore referred to as a metallization layer containing metal particles.
The metallization layer preferably has aluminum particles and/or silver particles. The metallization layer is preferably an Ag (silver) layer, more preferably an Al (aluminum) layer or a mixture of Al (aluminum) and Si (silicon). The metallization layer is preferably produced by means of a paste metallization and a subsequent firing step. This results in a macroscopically homogeneous but microscopically inhomogeneous metal layer. Microscopically heterogeneous layers have metal particles with air or glass filled gaps between them. Due to the lamination process associated with the heat and pressure effect of the solar modules connected to the string, the embedding polymers used for lamination, such as EVA, can also penetrate into the above-mentioned intermediate spaces.
In a preferred embodiment, the light-reflecting layer is configured as a white layer in the infrared as a layer containing a white pigment. The white pigment is preferably configured as titanium dioxide particles. The white pigment may be applied, for example, by a screen printing, spraying or rolling process. Such a layer is configured in a reflective manner such that optical changes in the rear-side metallization, for example caused by the lamination process in the production of the solar module, are effectively decoupled from the solar cell properties.
In one of the preferred embodiments, the light-reflecting layer is configured as a micro-porous layer. That is, the light reflecting layer has pores in the form of fine pores and may thus be at least partially permeable to a fluid. It may be open or closed porous.
The light-reflecting layer preferably has at least 30% SiOx. For example, the light-reflecting layer may have such an amount of SiOx particles, the size of which is preferably small enough that they, together with air located between the SiOx particles, effectively produce a lower refractive index than SiOx itself. A light reflecting layer having a refractive index of less than 1.7, preferably less than 1.5, more preferably less than 1.3 can thereby be achieved. A light-reflecting layer having a refractive index of less than 1.7, preferably less than 1.5, more preferably less than 1.3, may be applied to at least one functional layer, for example by a rolling process, screen printing, spraying or dipping.
In the second and third variants, the light-reflecting layer is configured to be opaque. The effect of light reflection is therefore independent of the optical properties of the embedding polymer which penetrates into the intermediate spaces between the metal particles of the metallization layer during the manufacture of the solar module. The term "opaque" means opaque or substantially opaque.
In a preferred embodiment, the metallization layer is designed such that it forms local electrical contacts through the light-reflecting layer and through the at least one functional layer at a plurality of locations. In this embodiment, it is configured as a PERC cell, for example.
In a further preferred embodiment, the light-reflecting layer is embodied such that it is electrically conductive, so that there is a large-area electrical contact between the metallization layer and the at least one functional layer. This is the structure of the so-called TOPCON solar cell concept. In this embodiment, there is usually no local electrical contact through the functional layer, but the functional layer has sufficient conductive properties to make contact with the functional layer sufficient for back-side contact of the wafer solar cell. If the functional layer and the light-reflecting layer are also electrically conductive, a current flows from the semiconductor substrate through the back-side metallization, the light-reflecting layer and the functional layer/a current flows through the back-side metallization, the light-reflecting layer and the functional layer to the semiconductor substrate.
In the case of a heterojunction solar cell, one or more layers of doped and intrinsic amorphous silicon and TCO (transparent conductive oxide layer) are preferably applied as transparent semiconductor layers on the semiconductor substrate to receive the generated current. In this embodiment, at least one functional layer preferably has a TCO.
In a preferred embodiment, the wafer solar cell is configured as a PERC solar cell. Alternatively, the wafer solar cell is preferably configured as a TOPCON solar cell. Furthermore, the wafer solar cell is preferably designed as a heterojunction solar cell.
At least one functional layer preferably has at least one dielectric layer. At least one of the dielectric layers is preferably composed of an AlOx layer and a SiNx layer. This embodiment is advantageous if the wafer solar cell is configured as a PERC solar cell.
In a preferred embodiment, at least one functional layer has at least one semiconductor layer, wherein the at least one semiconductor layer is composed of amorphous silicon or microcrystalline silicon. The functional layer can thus be designed to be particularly thin and inexpensive. Such layers may be achieved by sputtering, vacuum vapor deposition, CVD, APCVD or PECVD.
The at least one functional layer preferably has at least one semiconductor layer, wherein the at least one semiconductor layer is doped with an element selected from the group consisting of: phosphorus, boron, gallium or aluminum. The efficiency of the wafer solar cell can thereby be further improved.
In a preferred embodiment, the at least one functional layer has at least one semiconductor layer and at least one dielectric layer, wherein the at least one dielectric layer is formed between the at least one semiconductor layer and the semiconductor substrate.
At least one functional layer preferably has at least one dielectric layer, and at least one dielectric layer is designed as a tunnel layer with a thickness of less than 5nm, preferably less than 3 nm. This means that charge carriers can tunnel through the layer. This embodiment is particularly advantageous if the wafer solar cell is configured as a TOPCON solar cell.
In a preferred embodiment, at least one functional layer has at least one transparent conductive layer, wherein the at least one transparent conductive layer is composed of at least one TCO (transparent conductive oxide), wherein the at least one TCO is preferably selected from the group consisting of:
ZnO (zinc oxide), ITO (indium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), and FTO (fluorine tin oxide). This embodiment is advantageous if the wafer solar cell is configured as a heterojunction solar cell.
In a preferred embodiment, at least one functional layer has at least one semiconductor layer, wherein the at least one semiconductor layer is formed from two layers with different doping concentrations. The weaker or undoped layer is preferably designed with a layer thickness of less than 5nm, preferably less than 3 nm. This embodiment is advantageous if the wafer solar cell is constructed as a TOPCON or heterojunction solar cell. By means of the doped layer, charge carrier selectivity is generated. Preferably, the at least one doped semiconductor layer is designed as a layer stack comprising a plurality of layers of different or even no doping concentration and/or having a dielectric layer and a semiconductor layer. In this case, the undoped layer is preferably arranged directly on the semiconductor substrate and the doped semiconductor layer is arranged thereon. Alternatively or additionally, a dielectric layer, preferably AlOx, SiOx, SiCx, is arranged between the doped semiconductor layer and the semiconductor substrate. Alternatively or additionally, one or more SiNx or SiNxOy layers are preferably arranged on the side of the doped semiconductor layer facing away from the semiconductor substrate. The refractive index of the doped semiconductor layer is preferably between 3.6 and 4.6. The refractive index of the SiNx layer is preferably in the range of 1.9 to 2.4. The refractive index of the SiOxNy layer is preferably in the range of 1.5 to 1.9. All refractive indices described are measured according to DIN at a wavelength of 632 nm.
Silicon is preferred as the semiconductor substrate of a wafer solar cell. The wafer solar cell in one of the above-described embodiments having a semiconductor substrate may be combined with a solar cell composed of a perovskite substrate into a tandem solar cell. Tandem solar cells, also called stacked solar cells, multiple solar cells, are composed of two or more solar cells made of different material systems stacked on each other.
The wafer solar cell preferably has an emitter layer and/or a passivation layer on the front side. It preferably has front electrode fingers and a bus bar, for example made of silver, on the front side. In this embodiment, the wafer solar cell is preferably a PERC solar cell. Alternatively, for example, a TOPCON type, heterojunction or TCO junction may also be provided on the front side, and for a series structure, another solar cell, for example based on perovskite, may be provided on the front side.
The invention also relates to a solar module with a front side and a rear side, comprising
A glass sheet or plastic film or plastic plate constituting the front face,
a back-side packaging element having EVA or polyolefin as an embedding polymer, and
a plurality of wafer solar cells according to one or more of the embodiments described above, laminated between the front and back sides of the solar module.
The invention also relates to a method for producing a wafer solar cell, comprising the following steps
a) Providing a semiconductor substrate having a front side and a back side and a p-n junction provided in the semiconductor substrate or applied contiguously to the semiconductor substrate,
b) applying at least one functional layer on the back side of the semiconductor substrate, the at least one functional layer being selected from the group consisting of:
at least one dielectric layer
At least one semiconductor layer and
at least one transparent conductive layer,
c) applying a monolithically formed light-reflecting layer on the side of the at least one functional layer facing away from the rear side, wherein the light-reflecting layer is selected from the group consisting of:
a layer having a refractive index of less than 1.7 measured according to DIN at a wavelength of 632nm,
a white layer in the infrared having a reflectance of more than 80% at a wavelength of 1000nm, and
a homogeneous metal layer, and
d) a metallization layer containing metal particles is applied to the side of the light-reflecting layer facing away from the at least one functional layer.
The embodiments and the description disclosed with respect to the wafer solar cell apply correspondingly to the method, whereas the embodiments and the description disclosed with respect to the method apply correspondingly to the wafer solar cell.
According to step a), a semiconductor substrate is provided. The semiconductor substrate provided is preferably a partially processed semiconductor solar cell. A partially fabricated semiconductor solar cell is a semi-finished product that has performed one or more, but not yet all, of the process steps for manufacturing a PERC or TOPCON or heterojunction solar cell. Semiconductor solar cells are typically made from semiconductor wafers. In order to provide semiconductor wafers, semiconductor monocrystalline or polycrystalline semiconductor blocks are usually produced and cut into slices, for example by sawing. The semiconductor substrate or the partially processed semiconductor solar cell provided in step a) is manufactured from such a semiconductor wafer. For example, a semiconductor wafer is subjected to the following steps to manufacture a semiconductor substrate: texturing on one or both sides (to enlarge the surface and increase light acceptance) and then doping by performing a diffusion process to form a p/n junction. If the end product is a PERC solar cell, the semiconductor substrate provided in step a) preferably has been subjected to the above steps. If the end product is a PERC solar cell, the semiconductor substrate provided in step a) is preferably also subjected to a step of edge isolation and/or PSG etching. Alternatively, the semiconductor substrate may be saw damage etched and untextured, for example if the final product is a tandem solar cell. If the end product is a heterojunction solar cell and possibly in the case of transparent conductive contacts, the semiconductor substrate may be a partially processed solar cell in which the p-n junction is created by applying separate layers.
Furthermore, the semiconductor solar cell provided in step a) can be coated on the front side. For example, the semiconductor wafer solar cell provided in step a) may have an emitter layer and/or a passivation layer on the front side and a front electrode structure with front electrode fingers and bus bars. Alternatively, a TOPCON-type heterojunction or TCO junction may also be provided on the front side. For tandem solar cells, further solar cells, for example based on perovskites, may alternatively be provided on the front side.
Step b) comprises depositing at least one functional layer on the semiconductor substrate. Step b) can be carried out by means of PVD or CVD, for example by means of a PECVD (Plasma Enhanced Chemical Vapor Deposition) method. However, one or more dielectric layers in the form of aluminum oxide layer(s) may also be deposited by means of "atomic layer deposition" (ALD) or microwave remote plasma. The dielectric layer(s) is used for electrical backside passivation of the solar cell. The application of the functional layer(s) to the semiconductor substrate in step b) is preferably carried out over the entire area or substantially over the entire area. The at least one functional layer is preferably applied on one side, i.e. only on the rear side of the semiconductor substrate.
The application of the light-reflecting layer to at least one functional layer in step c) is preferably carried out over the entire area or substantially over the entire area. The light-reflecting layer is preferably applied to the back of the at least one functional layer by screen printing, spraying, dipping or rolling.
Depending on the properties of the light-reflecting layer and the metallization layer, it may be necessary and carried out accordingly to apply an additional protective layer before depositing the metallization layer.
Step d) is preferably performed by means of applying a metal paste and a subsequent firing step. An Ag paste, an Al paste or an Al/Si paste is preferably used as the metal paste. Such metal pastes have metal particles, a binder and a dissolving agent and optionally a frit, for example SiO2, B2O3 and/or ZnO. The metal paste generally has a metal particle diameter of 1 to 40 μm.
In a preferred embodiment, step c) is carried out using an industrial implementation selected from the group consisting of:
printing, preferably screen printing or pad printing;
spraying;
dipping;
rolling;
PVD (physical vapor deposition), preferably sputtering, and
CVD (chemical vapor deposition), preferably APCVD (atmospheric pressure chemical vapor deposition).
Before step d), a plurality of holes are introduced into the light-reflecting layer or into the light-reflecting layer and the at least one functional layer, preferably by means of a laser, so that the semiconductor substrate is at least partially free of the light-reflecting layer at a plurality of locations. These holes are also called LCO (Laser Contact Openings). Contact of the subsequently applied metallization layer with the semiconductor substrate can thereby be ensured in a simple manner. For example, a PERC solar cell architecture can be realized with this embodiment.
Alternatively or additionally, step d) is preferably carried out by coating the light-reflecting layer with a metal paste configured to constitute a contact with the substrate and/or the functional layer upon firing. For example, a metal paste is applied into the holes and preferably also onto the entire surface of the light-reflecting layer and then fired. Optionally, a metal paste is applied locally to the light-reflecting layer and is designed to "eat through" the light-reflecting layer and, if necessary, the functional layers during firing. Metal pastes suitable for "bite through" layers are known. In the latter case, before, simultaneously with or after the application of the metal paste forming the contact, a further metal paste can be applied to the light-reflecting layer, which metal paste is not designed as a light-transmitting light-reflecting layer but rather as a layer thereon, and before, simultaneously with or after the firing of the metal paste of the light-transmitting light-reflecting layer and, if necessary, of the functional layer, a local contact of the metallization layer with the at least one functional layer or the semiconductor substrate is thereby achieved. In a preferred embodiment, step d) is performed by coating the light-reflecting layer with two different metal pastes and firing. One metal paste is a metal paste without a glass frit, and the other metal paste is a metal paste with a glass frit. Upon firing, the metal paste containing the glass frit will "engulf" the light reflective layer and the optional functional layer.
Furthermore, alternatively or additionally, step c) is preferably carried out by using a silk-screen mould, so that the semiconductor substrate and the at least one functional layer located thereon are locally free of a light-reflecting layer at a plurality of locations after step c) is carried out. Contact of the subsequently applied metallization layer with the semiconductor substrate can thereby be ensured in a simple manner.
Preferably, in the case of TOPCON or heterojunction solar cells, the contact openings are realized only by the light-reflecting layer. More preferably, the light-reflecting layer is designed such that full-surface contact is achieved through it and no openings of the light-reflecting layer are required. This has the advantage that method steps or materials such as additional metal pastes for the local contact formation are omitted.
Drawings
Embodiments of the invention are shown purely schematically in the drawings and are described in more detail below. Purely schematically and not to scale, in the accompanying drawings:
FIG. 1 shows a cross-sectional view of a wafer solar cell according to the present invention;
fig. 2a to 2e show a method according to the invention for producing a wafer solar cell according to fig. 1;
FIG. 3 shows a cross-sectional view of another wafer solar cell according to the present invention; and
fig. 4 shows a partial cross-sectional view of a solar module according to the invention.
List of reference numerals
1 semiconductor substrate
11 front side
12 back side
2 functional layer
21 first functional layer
22 second functional layer
3 light reflecting layer
4 metallization layer
5 holes
6 emitter layer
7 passivation layer
8 front electrode finger
9 light
100 wafer solar cell
101 glass sheet
102 embedding polymers
103 back side packaging structure
Detailed Description
Fig. 1 shows a cross-sectional view of a wafer solar cell according to the present invention. The wafer solar cell has a substrate 1 with a front side 11 and a back side 12.
At least one functional layer 2 in the form of a first functional layer 21 and a second functional layer 22 is arranged on the rear side 12.
The first functional layer 21 is arranged between the rear side and the second functional layer 22. The first functional layer 21 and the second functional layer 22 are selected from the group consisting of dielectric layers, semiconductor layers, and transparent conductive layers.
Without limiting the wafer solar cell shown in fig. 1 to these materials, the first functional layer 21 is configured, for example, as an AlOx layer, while the second functional layer 22 is configured as a SiNx layer. The light-reflecting layer 3 is arranged on the side of the second functional layer 22 facing away from the first functional layer 21. The metallization layer 4 is arranged on the side of the light reflecting layer 3 facing away from the second functional layer 22 such that it is in local contact with the semiconductor substrate 1 at a plurality of locations through the light reflecting layer 3 and the dielectric layers 21, 22 fig. 1 thus shows a PERC solar cell.
The emitter layer 6 is arranged on the front side 11. The passivation layer 7 is arranged on a side of the emitter layer 6 facing away from the front surface 11. Furthermore, the wafer solar cell shows the front electrode fingers 8 of a front electrode structure which is not shown in further detail.
The light 9 incident on the front side 11 of the semiconductor substrate 1 is only partially absorbed in the semiconductor substrate 1. The remaining portion passes through the semiconductor substrate 1 and is reflected on the light reflection layer 3, which is indicated by black arrows.
Fig. 2a to 2e show a method according to the invention for producing a wafer solar cell, wherein the semiconductor substrates are each shown in a sectional view.
Fig. 2a shows a cross-sectional view of the semiconductor substrate 1 through step a), which comprises providing a semiconductor substrate 1 having a front side 11 and a back side 12.
According to step a), a semiconductor substrate 1 having a p-n junction provided in the semiconductor substrate 1 is provided. The semiconductor substrate 1 provided is a partially processed solar cell. For example, partially fabricated solar cells are textured on one or both sides, then doped to form p/n junctions and subjected to diffusion processes and/or edge isolation and PSG etching, especially if the final product is a PERC solar cell. The semiconductor substrate 1 shown in fig. 2a can also be partially processed in such a way that it is sawn off damaged etches and is untextured, for example if the final product is a tandem solar cell. The semiconductor substrate 1 can also be a partially processed solar cell, in which a p-n junction is created by applying separate layers, if the end product is a heterojunction solar cell and possibly in the case of transparent conductive contacts.
Fig. 2b shows a cross-sectional view of the semiconductor substrate 1 through step b), which comprises applying at least one functional layer 2 in the form of a first functional layer 21 and a second functional layer 22 onto the rear side 12 of the semiconductor substrate 1. The first functional layer 21 and the second functional layer 22 are respectively selected from the group consisting of a dielectric layer, a semiconductor layer, and a transparent conductive layer.
Fig. 2c shows a cross-sectional view of the semiconductor substrate 1 through step c) comprising applying a light-reflecting layer 3 on the side of the second functional layer 22 facing away from the back surface 12, wherein the light-reflecting layer 3 is selected from the group consisting of:
-a layer having a refractive index of less than 1.7 measured according to DIN at a wavelength of 632nm,
-a white layer in the infrared having a reflectivity of more than 80% at a wavelength of 1000nm, and
-a homogeneous metal layer.
Fig. 2d shows a cross-sectional view of a semiconductor substrate 1, which semiconductor substrate 1 has undergone the following steps: a plurality of holes 5 are introduced into the light-reflecting layer 3 and the functional layers 21, 22 by means of a laser (not shown) so that the semiconductor substrate 1 is locally detached from the light-reflecting layer 3 and the functional layers 21, 22 at a plurality of locations. This step d) is optional. For example, it may be performed for manufacturing a PERC solar cell. However, the step shown in figure 2d is not performed when fabricating TOPCON or heterojunction solar cells. Furthermore, the step shown in fig. 2d is also not performed if the local contacts of the PERC solar cell are manufactured in another way, for example by using a metal paste containing glass frit and firing.
Fig. 2e shows a cross-sectional view of the semiconductor substrate 1 which has been subjected to step d), which comprises applying a backside metallization layer 4 to the side of the light-reflecting layer 3 facing away from the dielectric layer 22. Fig. 2e shows a PERC solar cell, wherein the metallization layer 4 is configured such that it is arranged on the light-reflecting layer 3 and is in local contact with the semiconductor substrate 1 at a plurality of locations. However, this method is also suitable for the production of TOPCON or heterojunction solar cells in which the metallization layer 4 does not make local contact with the semiconductor substrate 1 and does not penetrate locally through the functional layer 2 and, if necessary, the light-reflecting layer 3, which is not shown here.
Fig. 3 shows a cross-sectional view of another wafer solar cell according to the present invention. The wafer solar cell shown in fig. 4 corresponds to the wafer solar cell shown in fig. 1 with the difference that the layers and/or components on the front side 11, which may be configured differently than shown in fig. 1, are omitted and it is not a PERC solar cell but a TOPCON or heterojunction solar cell, wherein the metallization layer 4 is provided on the light-reflecting layer 3 without locally penetrating the light-reflecting layer 3 and the functional layer 2 such that it does not locally contact the semiconductor substrate 1. In a further distinction, it is optionally conceivable for example for Topcon-type, heterojunction or TCO junctions on the front side 11. Implementation of the corresponding architecture of the front side 11 is within the capabilities of a person skilled in the art and will therefore not be described in detail.
Fig. 4 shows a partial cross-sectional view of a solar module according to the invention. The solar module has a front side and a back side. The front side is constituted by a glass sheet 101. The back side is constituted by the back side package structure 103. Between the glass sheet 101 and the back side encapsulation structure 103 a plurality of wafer solar cells 100 are arranged, which are laminated into an embedding polymer 102 made of EVA.
Claims (16)
1. A wafer solar cell (100), comprising:
a semiconductor substrate (1), the semiconductor substrate (1) comprising a front side (11) and a back side (12),
at least one functional layer (2), said functional layer (2) being disposed on said back face (12), said at least one functional layer being selected from the group consisting of:
-at least one dielectric layer,
-at least one semiconductor layer,
-at least one transparent conductive layer;
a monolithically formed light-reflecting layer (3) which is arranged on the side of the at least one functional layer (2) facing away from the rear face (12) and is selected from the group consisting of:
-a layer having a refractive index of less than 1.7,
-a white layer in the infrared, said white layer having a reflectivity of more than 80% at a wavelength of 1000nm, and
-a homogeneous metal layer;
and
a metallization layer (4) containing metal particles, which is arranged on the side of the light-reflecting layer (3) facing away from the at least one functional layer (2).
2. The wafer solar cell (100) according to claim 1, characterised in that the light-reflecting layer (3) is configured as a white layer in the infrared and the white light-reflecting layer (3) in the infrared is configured as a layer containing a white pigment, wherein the white pigment is preferably configured as titanium dioxide particles.
3. The wafer solar cell (100) according to any of the preceding claims, characterized in that the metallization layer (4) is configured such that it constitutes a local electrical contact through the light reflecting layer (3) and through the at least one functional layer (2) at a plurality of locations.
4. The wafer solar cell (100) according to any of the preceding claims, characterized in that the light reflecting layer (3) is configured such that it is electrically conductive such that there is a large area electrical contact between the metallization layer (4) and the at least one functional layer (2).
5. The wafer solar cell (100) according to any one of the preceding claims, characterised in that it is configured as a PERC solar cell, a TOPCON solar cell or a heterojunction solar cell.
6. Wafer solar cell (100) according to one of the preceding claims, characterized in that the at least one functional layer (2) has at least one dielectric layer and the dielectric layer is composed of AlOx and SiNx.
7. A wafer solar cell (100) according to any of the preceding claims 1 to 5, characterized in that the at least one functional layer (2) has at least one semiconductor layer, wherein the at least one semiconductor layer is composed of amorphous or microcrystalline silicon.
8. Wafer solar cell (100) according to any of the preceding claims 1 to 5 or 7, characterized in that the at least one functional layer (2) has the at least one semiconductor layer, wherein the at least one semiconductor layer is doped with an element selected from the group of:
phosphorus, boron, gallium or aluminum.
9. The wafer solar cell (100) according to any one of the preceding claims, characterized in that the at least one functional layer (2) has at least one semiconductor layer and at least one dielectric layer, wherein the at least one dielectric layer is configured between the at least one semiconductor layer and the semiconductor substrate (1).
10. The wafer solar cell (100) according to any of the preceding claims 1 to 6 or 9, characterized in that the at least one functional layer (2) has at least one dielectric layer and the at least one dielectric layer is provided as a tunnel layer with a thickness of less than 5nm, preferably less than 3 nm.
11. Wafer solar cell (100) according to any of the preceding claims 1 to 5, characterized in that the at least one functional layer (2) has at least one transparent conductive layer, wherein the at least one transparent conductive layer is composed of at least one TCO, wherein the at least one TCO is preferably selected from the group consisting of:
ZnO, ITO, AZO, ATO, and FTO.
12. The wafer solar cell (100) according to one of the preceding claims 1 to 5 and 7 to 9, characterized in that the at least one functional layer (2) has at least one semiconductor layer, wherein the at least one semiconductor layer is built up from two layers with different doping concentrations.
13. A solar module having a front side and a back side, the solar module having:
-a glass sheet (101) or a plastic film or a plastic plate constituting the front face,
-a back-side packaging element having EVA or polyolefin as embedding polymer (102), and
-a plurality of wafer solar cells (100) according to any of claims 1 to 12, laminated between the front and back sides of the solar module.
14. A method for manufacturing a wafer solar cell (100), the method comprising the following steps
a) Providing a semiconductor substrate (1) having a front side (11) and a rear side (12) and a p-n junction arranged in the semiconductor substrate (1) or a p-n junction applied contiguously to the semiconductor substrate,
b) applying at least one functional layer (2) on the rear side (12) of the semiconductor substrate (1), the at least one functional layer being selected from the group consisting of:
-at least one dielectric layer,
-at least one semiconductor layer, and
-at least one transparent electrically conductive layer,
c) applying a monolithically formed light-reflecting layer (3) on a side of the at least one functional layer (2) facing away from the rear side (12), wherein the light-reflecting layer (3) is selected from the group consisting of:
-a layer having a refractive index of less than 1.7,
-a white layer in the infrared, said white layer having a reflectivity of more than 80% at a wavelength of 1000nm, and
-a homogeneous metal layer,
and
d) a metallization layer (4) containing metal particles is applied to the side of the light-reflecting layer (3) facing away from the at least one functional layer (2).
15. The method according to claim 14, wherein said step c) is performed by using a process selected from the group consisting of:
printing, preferably screen or pad printing
Spraying of
Impregnation
-rolling
PVD and
CVD, preferably APCVD
16. The method according to claim 14 or 15, characterized in that a plurality of holes (5) are introduced into the light-reflecting layer (3) or into the light-reflecting layer (3) and the at least one functional layer (2) by means of laser light before step d), so that the semiconductor substrate (1) is at least partially free of the light-reflecting layer (3) at a plurality of locations;
and/or
Said step d) is carried out by coating said light-reflecting layer (3) with a metal paste configured to constitute, upon firing, a contact with said substrate (1) and/or with said functional layer (2);
and/or
Said step c) is carried out by using a silk-screen mould, so that said semiconductor substrate (1) and at least one functional layer (2) located thereon are locally free of said light-reflecting layer (3) at a plurality of locations after said step c) is carried out.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019114498.1A DE102019114498A1 (en) | 2019-05-29 | 2019-05-29 | Wafer solar cell, solar module and method for manufacturing the wafer solar cell |
| DE102019114498.1 | 2019-05-29 | ||
| PCT/DE2020/100453 WO2020239175A1 (en) | 2019-05-29 | 2020-05-28 | Wafer solar cell, solar module and method for producing the wafer solar cell |
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| CN114175278A true CN114175278A (en) | 2022-03-11 |
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| CN (1) | CN114175278A (en) |
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| CN117594667A (en) * | 2023-10-23 | 2024-02-23 | 天合光能股份有限公司 | Solar cell and preparation method thereof |
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| JP7627111B2 (en) | 2020-12-04 | 2025-02-05 | 東洋アルミニウム株式会社 | Paste composition for forming rear reflector layer of PERC type solar cell |
| DE102021110303A1 (en) * | 2021-04-22 | 2022-10-27 | Hanwha Q Cells Gmbh | Monolithic tandem solar cell |
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| DE102019114498A1 (en) | 2020-12-03 |
| WO2020239175A1 (en) | 2020-12-03 |
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