CN114156374B - Chip transfer device and chip transfer method - Google Patents

Abstract

The application provides a chip transfer device and chip transfer method, this chip transfer device includes base plate, magnetic part and the sacrifice piece of range upon range of setting in proper order, wherein: the magnetic piece can generate suction force to the LED chip so that the LED chip is adsorbed on the sacrificial piece, and the sacrificial piece can generate gas and enable the gas to impact the LED chip so that the LED chip is separated from the sacrificial piece. The chip transfer device can effectively improve the transfer yield of the LED chips.

Description

Chip transfer device and chip transfer method

Technical Field

The present invention relates to the field of display technology, and in particular to a chip transfer device and a chip transfer method.

Background technique

In the prior art, when manufacturing a light emitting diode (LED) display panel, it is necessary to transfer LED chips of different luminous colors to a carrier substrate in a specific arrangement to form a pixel array. For the transfer of light emitting diodes, the laser ablation method has obvious advantages: fast transfer speed, high flexibility, and can be quickly adjusted to suit devices of different sizes.

During the use of the above laser ablation method, laser debonding is generally required, but the amount of laser debonding is difficult to control. When the laser debonding is too thick, the chip will be trapped in the glue and cannot be separated; when the laser debonding is too thin, the bonding process is complicated and difficult, and there is insufficient adhesion.

Summary of the invention

The embodiments of the present application provide a chip transfer device and a chip transfer method, which effectively improve the transfer yield of LED chips.

The present application provides a chip transfer device, comprising a substrate, a magnetic member, and a sacrificial member stacked in sequence, wherein:

The magnetic member can generate suction force on the LED chip so that the LED chip is adsorbed on the sacrificial member, and the sacrificial member can generate gas and make the gas impact the LED chip so that the LED chip falls off the sacrificial member.

In some embodiments, the sacrificial member is a hydrogen-rich film, and the hydrogen-rich film can generate hydrogen under the action of the first laser.

In some embodiments, the thickness of the hydrogen rich film is greater than 10 nm and less than 50 nm.

In some embodiments, the hydrogen content of the hydrogen-rich film is greater than 5% and less than 20%.

In some embodiments, the thickness of the magnetic member is less than 10 μm.

The embodiment of the present application further provides a chip transfer method, which is applied to the above-mentioned chip transfer device, and the chip transfer method includes:

Controlling the magnetic member to generate suction force on the LED chip so that the LED chip is adsorbed on the sacrificial member;

The sacrificial member is controlled to generate gas, and the gas is made to impact the chip, so that the chip falls off from the sacrificial member.

In some embodiments, the sacrificial member is a hydrogen-rich film capable of generating hydrogen, and the chip transfer method includes: irradiating the sacrificial member with a first laser to generate hydrogen.

In some embodiments, before controlling the magnetic member to generate suction force on the LED chip, the method further includes:

Providing a donor substrate, on which an LED chip is disposed;

The donor substrate is irradiated with a second laser so that the LED chip falls off the donor substrate.

In some embodiments, the wavelength of the second laser is 308 nm.

In some embodiments, after controlling the sacrificial member to generate gas and causing the gas to impact the chip so that the chip falls off from the sacrificial member, the method further includes providing a receiving substrate to carry the fallen LED chip.

The chip transfer device provided in the embodiment of the present application includes a substrate, a magnetic part and a sacrificial part, which are stacked in sequence. When the LED chip needs to be transferred, the magnetic part adsorbs the LED chip so that the LED chip can be temporarily adsorbed on the sacrificial part, and then the sacrificial part generates gas to impact the LED chip so that the LED chip falls off the sacrificial part, thereby completing the transfer of the LED chip. It can be understood that the chip transfer device does not use laser debonding, so there is naturally no defect that the laser debonding cannot accurately control the chip falling off during the LED chip transfer process, that is, the magnetic part and the sacrificial part are used instead of the laser debonding to effectively improve the transfer yield of the LED chip.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

FIG1 is a schematic diagram of the structure of a chip transfer device provided in an embodiment of the present application.

FIG2 is a schematic flow chart of a chip transfer method provided in an embodiment of the present application.

FIG3 is a first structural schematic diagram corresponding to the chip transfer method provided in an embodiment of the present application.

FIG. 4 is a second structural schematic diagram corresponding to the chip transfer method provided in an embodiment of the present application.

Detailed ways

The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

The present application provides a chip transfer device and a chip transfer method, which effectively improve the transfer yield of LED chips.

Please refer to FIG. 1 , which is a schematic diagram of the structure of a chip transfer device provided in an embodiment of the present application.

The chip transfer device 100 comprises a stacked substrate 110, a magnetic member 120 and a sacrificial member 130. The magnetic member can generate suction to the LED chip so that the LED chip is adsorbed on the sacrificial member, and the sacrificial member can generate gas and make the gas impact the LED chip so that the LED chip falls off the sacrificial member.

The magnetic member 120 can generate a magnetic force to absorb the LED chip 200, wherein the area of the positive projection of the magnetic member 120 is equivalent to the area of the plurality of LED chips 200, and the magnetic member 120 can absorb the plurality of LED chips 200. The magnetic member 120 has magnetic properties, for example, the magnetic member 120 is a magnet composed of iron, cobalt, nickel or iron-nickel alloy. The thickness of the magnetic member 120 is less than 10 μm, and the magnetic member 120 can be covered on the substrate 110 by sputtering, deposition or gluing.

More specifically, the LED chip 200 provided in the present application may be a common LED (Light-Emitting Diode) chip, a microLED (microLight-Emitting Diode) chip or a miniLED (mini Light-Emitting Diode) chip. Among them, the LED chip 200 is a commonly used light-emitting device that emits light by releasing energy through the recombination of electrons and holes. The LED chip 200 is widely used in the field of lighting. The micro LED chip 200 refers to a self-luminous micron-scale LED as a light-emitting pixel unit, which is assembled on a driving panel to form a high-density LED array. Due to the small size, high integration and self-luminescence of the micro LED chip 200, it has greater advantages in brightness, resolution, contrast, energy consumption, service life, response speed and thermal stability compared with LCD chips in terms of display. The miniLED chip 200 refers to an LED chip 200 with a chip size between 50 and 200 μm. The miniLED chip 200 has begun to be used in ultra-large screen high-definition displays, such as monitoring and command, high-definition broadcasting, high-end cinemas, medical diagnosis, advertising display, conferences and exhibitions, office display, virtual reality and other commercial fields. The LED chip 200 provided in the present application may be a vertical structure or a horizontal structure. The vertical structure of the LED chip 200 means that the anode and cathode are located on both sides of the LED chip 200, respectively, and the horizontal structure of the LED chip 200 means that the anode and cathode are located on the same side of the LED chip 200.

The LED chip 200 includes a chip body and a metal disposed on the chip body. The metal is configured to be a metal that can be adsorbed by the chip transfer device 100. The chip body is any one of the prior art. For example, the chip body may include a substrate, an epitaxial layer structure grown on the substrate, and an electrode located on the epitaxial layer structure. The metal may cover the above-mentioned electrode by sputtering or deposition. More specifically, the metal may be iron, cobalt, nickel or an iron-nickel alloy. When the metal is made of this material, it is more easily adsorbed by the metal adsorbed by the chip transfer device 100. In some cases, the metal may also be the electrode of the chip body itself.

The sacrificial member 130 can generate gas, such as hydrogen. The impact of the gas can cause the LED chip 200 adsorbed on the chip transfer device 100 to fall off from the sacrificial member 130. In this embodiment, the magnetic member 120 and the sacrificial member 130 are arranged in layers on the substrate 110, and the magnetic member 120 is arranged between the sacrificial member 130 and the substrate 110, so that the hydrogen generated by the sacrificial member 130 can directly act on the LED chip 200, so that when the sacrificial member 130 generates gas, the LED chip 200 can be impacted by the gas, and the impact force is greater than the magnetic force generated by the magnetic member 120, so that the LED chip 200 falls off from the sacrificial member 130. In other embodiments, the magnetic member 120 and the sacrificial member 130 can be other structures. For example, when the sacrificial member 130 is a layered structure, the magnetic member 120 can be magnetic particles doped in the sacrificial member 130.

The chip transfer device 100 provided in the embodiment of the present application includes a substrate 110, a magnetic member 120 and a sacrificial member 130, and the substrate 110, the magnetic member 120 and the sacrificial member 130 are stacked in sequence. When the LED chip 200 needs to be transferred, the magnetic member 120 adsorbs the LED chip 200 so that the LED chip 200 can be temporarily adsorbed on the sacrificial member 130, and then the sacrificial member 130 generates gas to impact the LED chip 200, so that the LED200 chip falls off from the sacrificial layer 130, thereby completing the transfer of the LED chip 200. It can be understood that the chip transfer device 100 does not use laser debonding, so naturally there is no defect such as the laser debonding cannot accurately control the chip falling off during the transfer of the LED chip 200, that is, the magnetic member 120 and the sacrificial member 130 replace the laser debonding, which effectively improves the transfer yield of the LED chip 200.

The sacrificial member 130 can be an organic material or an inorganic material. In the present embodiment, the sacrificial member 130 is an inorganic material, more specifically, the sacrificial member 130 is a hydrogen-rich film, which has hydrogen elements and can generate hydrogen. For example, the hydrogen-rich film is an amorphous silicon (a-Si) film, etc. When the sacrificial member 130 is an amorphous silicon (a-Si) film, the first laser irradiates the sacrificial member 130, which can trigger the sacrificial member 130 to generate hydrogen. Among them, the content of the hydrogen element is greater than 5% and less than 20%. It can be understood that if the content of the hydrogen element is small, the impact of the hydrogen generated by the sacrificial member 130 is less than the magnetic force generated by the magnetic member 120, so that the LED chip 200 cannot fall off the sacrificial member 130; when the content of the hydrogen element is large, the impact of the hydrogen generated by the sacrificial member 130 is much greater than the magnetic force generated by the magnetic member 120, which can easily cause damage to the LED chip 200.

The thickness of the hydrogen-rich film is greater than 10nm and less than 50nm. It can be understood that if the thickness of the hydrogen-rich film is less than or equal to 10nm, the first laser can easily penetrate the hydrogen-rich film, resulting in a waste of energy of the first laser; if the thickness of the hydrogen-rich film is greater than or equal to 50nm, the first laser can easily be absorbed by the hydrogen-rich film, so that the hydrogen element in the hydrogen-rich film cannot be fully utilized.

Please refer to Figures 2 and 3. Figure 2 is a schematic diagram of the process of the chip transfer method provided in the embodiment of the present application, and Figure 3 is a schematic diagram of the first structure corresponding to the chip transfer method provided in the embodiment of the present application.

The present application also provides a chip transfer method, which is applied to the above-mentioned chip transfer device 100. The chip transfer method includes:

S101 , controlling the magnetic component 120 to generate suction force on the LED chip 200 , so that the LED chip 200 is adsorbed on the sacrificial component 130 .

S102 , controlling the sacrificial member 130 to generate gas, and making the gas impact the LED chip 200 , so that the LED chip 200 falls off from the sacrificial member.

Specifically, the sacrificial member 130 generates gas, so that the LED chip 200 can be impacted by the gas, and the impact force is greater than the magnetic force generated by the magnetic member 120 , so that the LED chip 200 falls off from the sacrificial member 130 .

In some embodiments, after controlling the sacrificial member 130 to generate gas and causing the gas to impact the LED chip 200 so that the LED chip 200 falls off from the sacrificial member 130 , the method further includes: providing a receiving substrate 400 to carry the fallen LED chip 200 .

Specifically, in order to avoid relative displacement between the detached LED chip 200 and the receiving substrate 400, before the gas is generated, the relative position of the LED chip 200 to the receiving substrate 400 can be fixed. For example, a layer of solder can be coated on the receiving substrate 400, and the relative position of the LED chip 200 to the receiving substrate 400 can be fixed by thermal reflow. For another example, a layer of adhesive can be coated on the receiving substrate 400, and the relative position of the LED chip 200 to the receiving substrate 400 can be fixed by the adhesion of the adhesive.

The LED chip 200 may be an R chip, a G chip or a B chip to achieve the transfer of three colors of R/G/B.

Among them, the receiving substrate 400 can be a TFT (Thin Film Transistor) glass substrate. After the receiving substrate 400 receives the LED chip 200, a TFT-LCD is made. TFT-LCD has the advantages of delicate and realistic images, light weight, low power consumption, and good environmental performance. It is widely used in televisions, laptops, mobile phones, monitors and other devices.

In some embodiments, the sacrificial member 130 is a hydrogen-rich film that can generate hydrogen. The step of controlling the sacrificial member 130 to generate gas includes: irradiating the sacrificial member 130 with a first laser so that the sacrificial member 130 generates hydrogen.

The sacrificial member 130 can be an organic material or an inorganic material. In the present embodiment, the sacrificial member 130 is an inorganic material, more specifically, the sacrificial member 130 is a hydrogen-rich film, which has hydrogen elements and can generate hydrogen. For example, the hydrogen-rich film is an amorphous silicon (a-Si) film, etc. When the sacrificial member 130 is an amorphous silicon (a-Si) film, the first laser irradiates the sacrificial member 130, which can trigger the sacrificial member 130 to generate hydrogen. Among them, the content of the hydrogen element is greater than 5% and less than 20%. It can be understood that if the content of the hydrogen element is small, the impact of the hydrogen generated by the sacrificial member 130 is less than the magnetic force generated by the magnetic member 120, so that the LED chip 200 cannot fall off the sacrificial member 130; when the content of the hydrogen element is large, the impact of the hydrogen generated by the sacrificial member 130 is much greater than the magnetic force generated by the magnetic member 120, which can easily cause damage to the LED chip 200.

The thickness of the hydrogen-rich film is greater than 10nm and less than 50nm. It can be understood that if the thickness of the hydrogen-rich film is less than or equal to 10nm, the first laser can easily penetrate the hydrogen-rich film, resulting in a waste of energy of the first laser; if the thickness of the hydrogen-rich film is greater than or equal to 50nm, the first laser can easily be absorbed by the hydrogen-rich film, so that the hydrogen element in the hydrogen-rich film cannot be fully utilized.

In some embodiments, before controlling the magnetic member 120 to generate suction force on the LED chip 200, a donor substrate 300 is provided, on which the LED chip 200 is disposed. The donor substrate 300 is irradiated with a second laser so that the LED chip 200 falls off the donor substrate 300.

Specifically, the donor substrate 300 may be a wafer structure, on which the LED chip 200 is disposed. In this embodiment, laser lift-off (LLO) technology is used to remove the LED chip 200 from the donor substrate 300. The LLO technology utilizes a second laser energy to decompose the donor substrate 300. The wavelength of the second laser is 308 nm.

Please refer to FIG. 4 , which is a second structural schematic diagram corresponding to the chip transfer method provided in an embodiment of the present application.

In some embodiments, before providing the receiving substrate 400 , it also includes: providing a second chip transfer device 500 to carry the detached LED chip 200 ; using a third laser to irradiate the second chip transfer device 500 so that the LED chip 200 falls off the second chip transfer device 500 .

It is understandable that when the LED chip 200 can be a vertical structure, the second chip transfer device 500 can be used to flip the LED chip 200, so that the positive and negative electrodes of the LED chip 200 are connected to the TFT glass panel.

Among them, the second chip transfer device 500 can be the same structure as the first chip transfer device 100 mentioned above, for example, the second chip transfer device 500 also includes a substrate 510, a magnetic part and a sacrificial part. The magnetic part is arranged on the substrate, and the magnetic part can adsorb the LED chip. The sacrificial part is arranged on the side of the magnetic part away from the substrate. The sacrificial part can generate gas, and the gas can cause the LED chip to fall off the substrate. The second chip transfer device 500 can also be a structure different from the first chip transfer device 100 mentioned above. For example, the second chip transfer device 500 includes a substrate 510 and a laser debonding glue 520. The second chip transfer device 500 is attached with a side of the laser debonding glue 520 for receiving and carrying the detached LED chip 200, and then the laser debonding glue is irradiated with a third laser to decompose the laser debonding glue 520, so that the LED chip 200 falls off to the receiving substrate.

The chip transfer device 100 provided in the embodiment of the present application includes a substrate 110, a magnetic member 120 and a sacrificial member 130, and the substrate 110, the magnetic member 120 and the sacrificial member 130 are stacked in sequence. When the LED chip 200 needs to be transferred, the magnetic member 120 adsorbs the LED chip 200 so that the LED chip 200 can be temporarily adsorbed on the sacrificial member 130, and then the sacrificial member 130 generates gas to impact the LED chip 200, so that the LED200 chip falls off from the sacrificial layer 130, thereby completing the transfer of the LED chip 200. It can be understood that the chip transfer device 100 does not use laser debonding, so naturally there is no defect such as the laser debonding cannot accurately control the chip falling off during the transfer of the LED chip 200, that is, the magnetic member 120 and the sacrificial member 130 replace the laser debonding, which effectively improves the transfer yield of the LED chip 200.

In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.

The chip transfer device and chip transfer method provided in the embodiments of the present application are described in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present application.

Claims (10)

1. The utility model provides a chip transfer device, its characterized in that includes first chip transfer device and second chip transfer device, first chip transfer device includes base plate, magnetic part and the sacrifice piece of laminating the setting in proper order, wherein:

the magnetic piece can generate suction force on the LED chip so that the LED chip is adsorbed on the sacrificial piece, and the sacrificial piece can generate gas and enable the gas to impact the LED chip so that the LED chip is separated from the sacrificial piece;

the second chip transfer device bears the LED chip that drops from on the first chip transfer device, the second chip transfer device includes second base plate and glue film, the glue film is kept away from one side of second base plate is used for bearing the LED chip, the glue film sets up to laser and solves viscose to make under outside laser irradiation, laser and solve viscose and decompose, so that the LED chip drops.

2. The chip transfer apparatus according to claim 1, wherein the sacrificial member is a hydrogen-rich film capable of generating hydrogen gas by the first laser.

3. The chip transfer apparatus of claim 2, wherein the hydrogen-rich film has a thickness greater than 10nm and less than 50nm.

4. The chip transfer apparatus according to claim 2, wherein the hydrogen element content of the hydrogen-rich film is more than 5% and less than 20%.

5. The chip transfer apparatus of claim 1, wherein the magnetic member has a thickness of less than 10 μm.

6. A chip transfer method, characterized by being applied to the chip transfer apparatus of any one of claims 1 to 5, comprising:

controlling the magnetic piece to generate suction force on the LED chip so as to enable the LED chip to be adsorbed on the sacrificial piece;

controlling the sacrificial member to generate gas, and enabling the gas to impact the LED chip so as to enable the LED chip to fall off from the sacrificial member and be carried by a second chip transferring device;

and irradiating the adhesive layer of the second chip transfer device by using laser so as to enable the LED chip to fall off from the second chip transfer device.

7. The chip transfer method according to claim 6, wherein the sacrifice member is a hydrogen-rich film capable of generating hydrogen gas, and the control of the sacrifice member to generate gas, the chip transfer method comprising: the sacrificial member is irradiated with a first laser so that the sacrificial member generates hydrogen.

8. The chip transfer method according to claim 6, further comprising, before said controlling said magnetic member to generate attraction force to the LED chip:

providing a donor substrate, wherein an LED chip is arranged on the donor substrate;

irradiating the donor substrate with a second laser so that the LED chip is detached from the donor substrate.

9. The chip transfer method according to claim 8, wherein the wavelength of the second laser is 308nm.

10. The method of chip transfer according to claim 6, wherein after the controlling the sacrifice member to generate the gas and causing the gas to impinge on the LED chip to peel off the LED chip from the sacrifice member, further comprising: a receiving substrate is provided to carry the LED chips that are detached.