CN114156327B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN114156327B CN114156327B CN202111445978.5A CN202111445978A CN114156327B CN 114156327 B CN114156327 B CN 114156327B CN 202111445978 A CN202111445978 A CN 202111445978A CN 114156327 B CN114156327 B CN 114156327B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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Abstract
The invention relates to the technical field of display equipment, and discloses a display panel and a display device, wherein the display panel comprises a substrate base plate, a plurality of organic light-emitting transistors, an insulating isolation layer and a black matrix; each organic light-emitting transistor comprises a grid electrode, a grid electrode insulating layer, an organic light-emitting layer, a source electrode and a drain electrode, wherein the grid electrode, the grid electrode insulating layer and the organic light-emitting layer are arranged in a stacked mode, the source electrode and the drain electrode are electrically connected with the organic light-emitting layer, and a gap formed through an etching process is formed between every two adjacent organic light-emitting layers; the insulation isolation layer is filled in the gap and used for limiting the light emergent area of each organic light-emitting transistor; the black matrix is positioned on the light emitting side of the plurality of organic light emitting transistors, and the orthographic projection of the black matrix on the substrate covers the orthographic projection of the insulating isolation layer on the substrate. The display panel can improve pixel resolution, pixel aperture ratio and color gamut.
Description
Technical Field
The present invention relates to the field of display devices, and in particular, to a display panel and a display device.
Background
An Organic Light Emitting Transistor (OLET) is a device integrating the switching function of an Organic Field Effect Transistor (OFET) with the electroluminescent function of an organic electroluminescent device (OLED). The working principle of the OLET device is as follows: the gate voltage controls the area and the light emitting intensity of the light emitting region while controlling the source leakage current of the TFT portion. The OLET device has the advantages of simple structure, mature preparation process, light weight and easy miniaturization, and becomes one of the development trends of future display technologies, and the OLET device is necessary to be studied in depth.
Disclosure of Invention
The invention provides a display panel and a display device, wherein the interval between organic light emitting layers in the display panel is reduced, the surface light emitting area of the organic light emitting layers can be enlarged, and further, the pixel resolution, the aperture ratio of pixels and the color gamut can be improved.
In order to achieve the above purpose, the present invention provides the following technical solutions:
A display panel comprising a substrate base and a plurality of organic light emitting transistors, insulating barrier layers and a black matrix on the substrate base;
Each organic light-emitting transistor comprises a grid electrode, a grid electrode insulating layer, an organic light-emitting layer, a source electrode and a drain electrode, wherein the grid electrode, the grid electrode insulating layer and the organic light-emitting layer are arranged in a stacked mode, the source electrode and the drain electrode are electrically connected with the organic light-emitting layer, and a gap formed through an etching process is formed between every two adjacent organic light-emitting layers;
the insulation isolation layer is filled in the gap and used for limiting the light emergent area of each organic light-emitting transistor;
the black matrix is positioned on the light emitting sides of the plurality of organic light emitting transistors, and the orthographic projection of the black matrix on the substrate covers the orthographic projection of the insulating isolation layer on the substrate.
The display panel provided by the embodiment of the invention comprises a substrate base plate, a plurality of organic light emitting transistors, an insulation isolation layer and a black matrix, wherein the plurality of organic light emitting transistors are positioned on the substrate base plate, each organic light emitting transistor comprises a grid electrode, a grid electrode insulation layer, an organic light emitting layer, a source electrode and a drain electrode, a gap can be formed between every two adjacent organic light emitting layers through an etching process, the insulation isolation layer is filled in the gap, the light emitting area of each organic light emitting transistor can be limited through the insulation isolation layer, the black matrix is positioned on the light emitting layer of the organic light emitting transistor, and the orthographic projection of the black matrix on the substrate base plate covers the orthographic projection of the insulation isolation layer on the substrate base plate, so that crosstalk between the adjacent organic light emitting layers can be avoided. The above-mentioned display panel can be used to replace the structures of the pixel defining layer and bank in the prior art by the insulating barrier layer and the black matrix covering the insulating barrier layer in the gap between the adjacent organic light emitting layers, the width of the gap formed by the etching process is smaller than that of the pixel defining layer in the prior art, and when the display panel with high resolution is manufactured, the interval between the organic light emitting layers is reduced, the area light emitting area of the organic light emitting layers can be enlarged, and the resolution of the display panel, the aperture ratio of the pixels and the color gamut can be further improved.
Optionally, the insulating isolation layer is arranged in the same layer as at least one insulating layer on the side of the organic light-emitting layer away from the substrate.
Optionally, the substrate is a transparent substrate, the organic light-emitting layer, the gate insulating layer and the gate are sequentially formed on the substrate, and the source electrode and the drain electrode are located at one side of the organic light-emitting layer away from the substrate;
the display panel further comprises a packaging layer positioned on one side of the grid electrode, which is away from the substrate;
the insulating isolation layer is prepared in the same layer as the gate insulating layer, and/or the insulating isolation layer is arranged in the same layer as at least one layer of the packaging layer.
Optionally, the organic light emitting layers in the plurality of organic light emitting transistors are organic light emitting layers of a same color;
the display panel further comprises a color film layer positioned on one side, away from the organic light-emitting layer, of the substrate, the color film layer comprises a plurality of light-filtering units corresponding to the organic light-emitting layer one by one, and the black matrix is positioned between every two adjacent light-filtering units.
Optionally, the gate electrode, the gate insulating layer and the organic light emitting layer are sequentially formed on the substrate;
the display panel further comprises an encapsulation layer positioned on one side of the organic light-emitting layer away from the substrate;
The insulating isolation layer and at least one layer of the packaging layer are arranged in the same layer.
Optionally, the source and drain electrodes are located on the same side of the organic light emitting layer; wherein,
The source electrode and the drain electrode are transparent films, or the source electrode and the drain electrode are opaque films.
Optionally, the organic light emitting layers in the plurality of organic light emitting transistors are organic light emitting layers of a same color;
the display panel further comprises a color film layer positioned on one side, away from the organic light-emitting layer, of the packaging layer, the color film layer comprises a plurality of light-filtering units corresponding to the organic light-emitting layer one by one, and the black matrix is positioned between every two adjacent light-filtering units.
Optionally, a plurality of grooves corresponding to the organic light emitting layers one by one are formed on one side of the packaging layer away from the organic light emitting layers, orthographic projections of each groove on the substrate are located between orthographic projections of the source electrode and the drain electrode of the same organic light emitting transistor on the substrate, and the plurality of light filtering units are arranged in the plurality of grooves one by one.
Optionally, the organic light emitting layers in the plurality of organic light emitting transistors are all blue light emitting layers, and the plurality of light filtering units include a red light filtering unit, a green light filtering unit and a hollowed-out area.
Optionally, the organic light emitting layers in the plurality of organic light emitting transistors are all white light emitting layers;
The plurality of filter units comprise a red filter unit, a green filter unit and a blue filter unit.
Optionally, the organic light emitting layers in the plurality of organic light emitting transistors include light emitting layers of at least three colors.
The invention also provides a display device which comprises any display panel provided in the technical scheme.
Drawings
FIG. 1 is a schematic diagram of a display panel in the prior art;
Fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
Fig. 4 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
Fig. 5 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an organic light emitting transistor according to an embodiment of the present invention;
Fig. 7 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
Fig. 8 is a schematic structural diagram of another display panel according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Currently, a lateral OLET display panel structure may include a plurality of laterally fabricated organic light emitting transistors 01 as shown in fig. 1. In the case of fabricating the organic light emitting layer 011 in the organic light emitting transistor, it is necessary to fabricate structures such as the pixel defining layer 03 and the bank on the substrate 02 to define the light emitting region, and then form the organic light emitting layer 011 at the openings of the pixel defining layer and the bank, but since the widths of the structures such as the pixel defining layer and the bank are relatively wide, in the case of the display panel requiring the high resolution PPI, the structures such as the pixel defining layer and the bank affect the aperture ratio of the OLET display panel, resulting in a problem of small aperture ratio of the pixels.
In order to solve the above technical problems, the present invention provides a display panel, as shown in fig. 2, comprising a substrate 1 and a plurality of organic light emitting transistors, an insulating barrier layer 3 and a black matrix 4 on the substrate;
Each organic light emitting transistor comprises a grid electrode 21, a grid electrode insulating layer 22, an organic light emitting layer 23, a source electrode 24 and a drain electrode 25, wherein the grid electrode 21, the grid electrode insulating layer 22 and the organic light emitting layer 23 are stacked, the source electrode 24 and the drain electrode 25 are electrically connected with the organic light emitting layer 23, and a gap formed by an etching process is formed between every two adjacent organic light emitting layers 23;
an insulating barrier layer 3 filled in the gap for defining a light emitting region of each organic light emitting transistor;
The black matrix 4 is located on the light emitting side of the plurality of organic light emitting transistors, and the orthographic projection of the black matrix 4 on the substrate 1 covers the orthographic projection of the insulating barrier layer 3 on the substrate 1.
The display panel provided by the embodiment of the invention comprises a substrate 1, a plurality of organic light emitting transistors, an insulation isolation layer 3 and a black matrix 4, wherein the plurality of organic light emitting transistors are positioned on the substrate 1, each organic light emitting transistor comprises a grid electrode 21, a grid electrode insulation layer 22, an organic light emitting layer 23, a source electrode 24 and a drain electrode 25, a gap can be formed between every two adjacent organic light emitting layers 23 through an etching process, the insulation isolation layer 3 is filled in the gap, the light emitting area of each organic light emitting transistor can be limited through the insulation isolation layer 3, the black matrix 4 is positioned on the light emitting layer of the organic light emitting transistor, and the orthographic projection of the black matrix 4 on the substrate 1 covers the orthographic projection of the insulation isolation layer 3 on the substrate 1, so that crosstalk between the adjacent organic light emitting layers 23 can be avoided. In the above display panel, the insulating barrier layer 3 in the gap between the adjacent organic light emitting layers 23 and the black matrix 4 covering the insulating barrier layer 3 can be used to replace the structures such as the pixel defining layer and bank in the prior art, the width of the gap formed by the etching process is smaller than that of the pixel defining layer in the prior art, and when the high resolution display panel is manufactured, the interval between the organic light emitting layers 23 is reduced, the area light emitting area of the organic light emitting layers 23 can be enlarged, and the resolution of the display panel, the aperture ratio of the pixels and the color gamut can be further improved.
In the actual production and manufacturing process, the etching of the organic light emitting layer 23 can be realized through a dry etching process, the dry etching process technology can optimize the width of the gap to about 2 μm, the width of the pixel defining layer in the prior art depends on the resolution, the minimum width can be 16 μm, the gap can be found to be much smaller than the width of the pixel defining layer by comparing the gap with the pixel defining layer in the prior art in the embodiment of the invention, and in the embodiment of the invention, the light emitting area of the organic light emitting layer 23 in the organic light emitting transistor can be limited by the insulating isolation layer 3 in the gap and the black matrix 4 covering the insulating isolation layer 3, so that the resolution of the display panel, the aperture ratio of the pixel and the color gamut can be greatly improved.
The insulating layer 3 may be disposed in the same layer as at least one insulating layer on a side of the organic light-emitting layer 23 facing away from the substrate 1. That is, after the organic light emitting layers 23 are manufactured, the insulating barrier layers 3 filled in the gaps between the organic light emitting layers 23 can be manufactured by the same layers of insulating layers formed later, so that reasonable utilization of other film layers in the display panel is realized, the manufacturing process can be simplified, and the manufacturing cost for manufacturing structures such as pixel defining layers and banks can be reduced.
Specifically, the display panel may be a bottom emission, top emission or double-sided light emitting structure, which is not limited herein, depending on the actual situation.
In one possible embodiment, the structure of the display panel may be as shown in fig. 2, the substrate 1 is a transparent substrate, the organic light emitting layer 23, the gate insulating layer 22, and the gate electrode 21 are sequentially formed on the substrate 1, and the source electrode 24 and the drain electrode 25 may be located at a side of the organic light emitting layer 23 facing away from the substrate 1. If the gate electrode 21, the source electrode 24 and the drain electrode 25 are opaque films, the display panel is a bottom emission structure; if the gate electrode 21, the source electrode 24 and the drain electrode 25 are transparent films, the display panel may have a dual-sided light emitting structure. The structure has the advantages of mature preparation process, few preparation steps, few applied mask plates, wide range of used materials and low preparation cost. The display panel further comprises an encapsulation layer 51 on the side of the gate electrode 21 facing away from the substrate 1. The manufacturing steps of the display panel structure in fig. 2 may be:
the first step: forming an entire organic film layer on the substrate 1;
And a second step of: etching the organic film layer through a dry etching process to form a plurality of organic light emitting layers 23, wherein gaps are formed between two adjacent organic light emitting layers 23;
and a third step of: forming a gate insulating layer 22 on the organic light emitting layer 23, and the film thickness may be 100 to 300nm;
Fourth step: source electrode 24 and drain electrode 25 are formed on organic light emitting layer 23, and the film thickness may be
Fifth step: forming a gate electrode 21 on the gate insulating layer 22, wherein the film thickness of the transparent gate electrode can be 6.5-14 nm, and the film thickness of the opaque gate electrode can be 90-1500 nm;
Sixth step: an encapsulation layer 51 is formed on the side of the gate electrode 21 facing away from the substrate 1.
In the manufacturing step of the display panel, the gate insulating layer 22 is manufactured after the organic light emitting layer 23 in the organic light emitting transistor is formed, so that the insulating barrier layer 3 and the gate insulating layer 22 can be manufactured in the same layer, thereby simplifying the manufacturing process and saving the manufacturing cost. In addition, the organic light emitting layer 23 may be manufactured by a fine metal Mask (FMM Mask), and the gate insulating layer 22, the source electrode 24, the drain electrode 25, and the gate electrode 21 may be manufactured by a conventional Open Mask, which requires a simple process and has a low manufacturing cost.
Specifically, in the above-mentioned manufacturing step of the display panel, after the gate electrode 21 is formed on the gate insulating layer 22, the encapsulation layer 51 is formed on the side of the plurality of organic light emitting transistors away from the substrate 1. The encapsulation layer 51 may be composed of a plurality of inorganic thin film encapsulation layers and organic thin film encapsulation layers alternately stacked, and each of the film layers in the encapsulation layer 51 is also an insulating layer. Therefore, the insulating layer 3 may be provided in the same layer as at least one of the encapsulation layers 51, that is, the insulating layer 3 is formed of at least one of the encapsulation layers 51; alternatively, the insulating layer 3 may be provided in the same layer as at least one of the gate insulating layer 22 and the encapsulation layer, that is, the insulating layer 3 is formed of at least one of the gate insulating layer 22 and the encapsulation layer 51.
Specifically, the black matrix 4 may be located at a side of the substrate base 1 facing away from the organic light emitting layer 23. As shown in fig. 2, the organic light emitting layer 23 of the plurality of organic light emitting transistors in the display panel may include light emitting layers of at least three colors, for example, the organic light emitting layer 23 of the plurality of organic light emitting transistors includes a red light emitting layer R, a green light emitting layer G, and a blue light emitting layer B, and the plurality of organic light emitting transistors in the display panel may be manufactured as single color devices emitting red light, green light, and blue light, respectively, by the difference of the light emitting colors of the organic light emitting layers 23, the display panel including the organic light emitting transistors emitting red light, green light, and blue light may emit single color light or white light under the action of the control circuit.
In addition, the organic light emitting layers 23 in the plurality of organic light emitting transistors in the display panel may be organic light emitting layers 23 of the same color; at this time, the display panel may further include a color film layer located on a side of the substrate 1 facing away from the organic light emitting layer 23, so as to improve the color gamut of the display panel, where the color film layer may include a plurality of filter units corresponding to the organic light emitting layer 23 one by one, and the black matrix 4 is located between every two adjacent filter units.
Specifically, as shown in fig. 3, the organic light emitting layers 23 in the plurality of organic light emitting transistors may be all blue light emitting layers B, and the plurality of light filtering units include a red light filtering unit, a green light filtering unit, and a hollowed-out area. The red filter unit may be a red quantum dot light conversion film 601, and after blue light irradiates the red quantum dots, the red quantum dots emit red light; the green filter unit may be a green quantum dot light conversion film 602, where after blue light irradiates on the green quantum dot, the green quantum dot emits green light; and the hollow region 603 directly transmits blue light. The display panel can emit monochromatic light or white light by the light conversion of the plurality of filter units. Optionally, the red filtering unit may further include a red color film located at the light emitting side of the red quantum dot light conversion film, the green filtering unit may further include a green color film located at the light emitting side of the green quantum dot light conversion film, and the hollowed-out area may further include a blue color film, so that light emitting areas of the plurality of organic light emitting transistors of the display panel can be further filtered, and crosstalk between pixels is avoided.
Specifically, as shown in fig. 4, the organic light emitting layers 23 in the plurality of organic light emitting transistors may also be white light emitting layers W, and the plurality of filter units include a red filter unit, a green filter unit, and a blue filter unit. The red filter unit may be a red color film 611, the green filter unit may be a green color film 612, and the blue filter unit may be a blue color film 613. Or the red filter unit can be a red quantum dot light conversion film, the green filter unit can be a green quantum dot light conversion film, and the blue filter unit can be a blue quantum dot light conversion film; or a combination of the two. The structures of the red filter unit, the green filter unit, and the blue filter unit are not limited herein, and may be selected according to practical situations.
In another possible embodiment, as shown in fig. 5, the structure of the display panel may be that the gate electrode 21, the gate insulating layer 22 and the organic light emitting layer 23 are sequentially formed on the substrate 1, and further include an encapsulation layer on a side of the organic light emitting layer 23 facing away from the substrate 1, where the display panel is a top emission structure. The manufacturing steps of the display panel structure in fig. 5 may be:
the first step: depositing a gate electrode 21 material on the substrate 1, and then forming a gate electrode 21 through an etching process;
And a second step of: a gate insulating layer 22 is formed on the gate electrode 21, and the thickness of the gate insulating layer may be
And a third step of: an organic film layer is formed on the gate insulating layer 22, and the film thickness can be
Fourth step: etching the organic film layer through a dry etching process to form a plurality of organic light emitting layers 23, wherein gaps are formed between two adjacent organic light emitting layers 23;
fifth step: forming patterned source and drain electrodes 24 and 25 on the organic light emitting layer 23;
sixth step: forming an encapsulation layer 52 on the side of the source 24 and drain 25 facing away from the substrate 1;
seventh step: the black matrix 4 is formed on the side of the encapsulation layer facing away from the source electrode 24 and the drain electrode 25.
In the above-described manufacturing steps of the display panel, after the organic light emitting layer 23 in the organic light emitting transistor is formed, the encapsulation layer 52 is formed, and the encapsulation layer 52 may be composed of a plurality of alternately stacked inorganic thin film encapsulation layers and organic thin film encapsulation layers, and each of the film layers in the encapsulation layer 52 is also an insulating layer. Therefore, the insulating barrier layer 3 may be provided in the same layer as at least one of the encapsulation layers 52, i.e., the insulating barrier layer 3 is composed of at least one of the encapsulation layers 52.
Specifically, the source electrode 24 and the drain electrode 25 may be located on the same side or different sides of the organic light emitting layer 23. When the source electrode 24 and the drain electrode 25 are located on the same side of the organic light emitting layer 23, for example, in fig. 5, the source electrode 24 and the drain electrode 25 are located on a side of the organic light emitting layer 23 away from the gate insulating layer 22, or in fig. 6, the source electrode 24 and the drain electrode 25 are located between the organic light emitting layer 23 and the gate insulating layer 22, the source electrode 24 and the drain electrode 25 can be formed on the same layer, and the same mask plate can be used, so that the manufacturing process is simplified, and the manufacturing cost is saved. The source electrode 24 and the drain electrode 25 may be transparent films, so that the light emitting surface of the organic light emitting transistor can be increased, and the aperture ratio and the division ratio of the device can be effectively improved. The source electrode 24 and the drain electrode 25 may be opaque films, and the film thickness may beThe opaque source electrode 24 and drain electrode 25 can also serve as a pixel defining layer, serve as a light emitting region of the organic light emitting transistor, cancel the arrangement of the pixel defining layer, and effectively improve the aperture opening ratio and resolution of the device, and at this time, the orthographic projection of the black matrix 4 on the array substrate 1 can cover the orthographic projection of the source electrode 24 and drain electrode 25 on the substrate 1.
Specifically, as shown in fig. 5, the organic light emitting layer 23 of the plurality of organic light emitting transistors in the display panel may include light emitting layers of at least three colors, for example, the organic light emitting layer 23 of the plurality of organic light emitting transistors includes a red light emitting layer R, a green light emitting layer G, and a blue light emitting layer B, and the plurality of organic light emitting transistors in the display panel can be manufactured as single color devices emitting red light, green light, and blue light, respectively, by the difference of light emitting colors of the organic light emitting layers 23, and the display panel including the organic light emitting transistors emitting red light, green light, and blue light can emit single color light or white light under the action of the control circuit.
In addition, the organic light emitting layers 23 in the plurality of organic light emitting transistors in the display panel may be organic light emitting layers 23 of the same color; the display panel may further include a color film layer disposed on a side of the encapsulation layer 52 facing away from the organic light emitting layer 23, where the color film layer may include a plurality of filter units corresponding to the organic light emitting layer 23 one by one, and the black matrix 4 is disposed between every two adjacent filter units.
Specifically, as shown in fig. 7, the organic light emitting layers 23 in the plurality of organic light emitting transistors may be blue light emitting layers, and the plurality of light filtering units include a red light filtering unit, a green light filtering unit, and a hollowed-out area. The red filter unit may be a red quantum dot light conversion film 621, and after blue light irradiates the red quantum dots, the red quantum dots emit red light; the green filter unit may be a green quantum dot light conversion film 622, where after blue light irradiates on the green quantum dots, the green quantum dots emit green light; the hollow area directly transmits blue light. The display panel can emit monochromatic light or white light by the light conversion of the plurality of filter units. Optionally, the red filter unit may further include a red color film 631 located on the light emitting side of the red quantum dot light conversion film, the green filter unit may further include a green color film 632 located on the light emitting side of the green quantum dot light conversion film, and the hollowed-out area may further include a blue color film 633, which can further filter the light emitting areas of the plurality of organic light emitting transistors of the display panel, so as to avoid crosstalk between pixels.
Specifically, the organic light emitting layers 23 in the plurality of organic light emitting transistors may also be white light emitting layers, and the plurality of filter units include a red filter unit, a green filter unit, and a blue filter unit. The red filter unit can be a red color film, the green filter unit can be a green color film, and the blue filter unit can be a blue color film; or the red filter unit can be a red quantum dot light conversion film, the green filter unit can be a green quantum dot light conversion film, and the blue filter unit can be a blue quantum dot light conversion film; or a combination of the two. The structures of the red filter unit, the green filter unit, and the blue filter unit are not limited herein, and may be selected according to practical situations.
Specifically, a plurality of grooves 521 corresponding to the organic light emitting layers 23 one by one may be formed on a side of the encapsulation layer 52 away from the organic light emitting layers 23, and orthographic projections of each groove 521 on the substrate 1 are located between orthographic projections of the source 24 and the drain 25 of the same organic light emitting transistor on the substrate 1, and a plurality of light filtering units are disposed in the plurality of grooves 521 one by one.
Specifically, a thin film transistor functional layer 7 may be further disposed between the substrate 1 and the gate electrode 21 of the display panel, and the thin film transistor functional layer 7 includes thin film transistors 71 electrically connected to the gate electrode 21 in a one-to-one correspondence, and a scan signal can be provided to the gate electrode 21 through the thin film transistors 71.
In the display panel provided in the embodiment of the invention, as shown in fig. 2 to 8, specific manufacturing materials and manufacturing methods of each film layer may be as follows.
Among them, glass, synthetic resin such as PET (polyethylene terephthalate), PES (polyether sulfone), PC (polycarbonate), or a silicon wafer can be used as the substrate 1.
The Gate electrode 21 (Gate) may be deposited using a metal such as Indium Tin Oxide (ITO), gold, silver, aluminum, magnesium, or a combination alloy of metals. In actual manufacturing, the deposition material and the film thickness can be selected according to whether the display panel structure is top emission, bottom emission or double-sided light emission. The grid electrode 21 is manufactured by a magnetron sputtering mode.
The gate insulating layer 22 (GATE DIELECTRIC) may be selected from zinc oxide (Al 2O 3), silicon nitride (SiNx), silicon oxide (SiO 2), polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), and the like. The gate insulating layer 22 is usually formed by Chemical Vapor Deposition (CVD), atomic Layer Deposition (ALD), or the like.
The materials of the Source 24 (Source) and the Drain 25 (Drain) may be selected from Indium Tin Oxide (ITO), gold, silver, copper, aluminum, magnesium, and other metal materials, the Source 24 and the Drain 25 may be the same material, and the Source 24 and the Drain 25 may be different materials, such as graphene for the Source 24 and Al for the Drain 25, moO3/Au for the Source 24, and LiF/Al for the Drain 25. The source and drain electrodes 25 may be made of gold by magnetron sputtering or vacuum evaporation, taking into consideration the work function, conductivity and light transmittance of the metal electrode.
The organic light emitting layer 23 includes at least an electron transport layer ETL, an emission layer EML, and a hole transport layer HTL, and the organic light emitting layer 23 may further include an electron blocking layer EBL between the hole transport layer and the emission layer and a hole blocking layer HBL between the electron transport layer and the emission layer, without limitation. The material of each film layer in the organic light-emitting layer 23 is preferably an organic transport material with high mobility and a light-emitting layer material with high light-emitting efficiency. The materials used for each layer and the thickness of the thin film may be determined according to specific device performance requirements. The organic semiconductor materials are prepared by adopting a vacuum evaporation mode, and the selection and thickness adjustment of the materials of each film layer can greatly influence the performance and the luminous color of the device, so that the device structures with different colors are prepared, and the film thickness difference of the organic materials of each layer in the device is large.
The materials of the packaging layer 51 and the packaging layer 52 can be prepared by alternately laminating inorganic film packaging layers with high refractive indexes and organic film packaging layers with low refractive indexes, so that the light extraction rate of the display panel can be improved, and the functions of protecting devices, isolating water and oxygen and prolonging the service lives of the devices can be achieved. The encapsulation layer may be prepared by conventional methods such as Chemical Vapor Deposition (CVD), inkjet printing (IJP), and the like.
Nanoparticles with surface plasmon resonance effect can be introduced into the red quantum dot light conversion layers 601 and 621, the green quantum dot light conversion layers 602 and 622, and the blue quantum dot light conversion layers, and the filtering performance can be further improved. The particles are selected such that the difference between the wavelength of their resonance absorption peak and the wavelength of the emission peak of the luminescent material is + -10 nm. The nanoparticles are typically Au, ag, al, zn, cu, cr, cd and one or a combination of several of Pt. The noble metal nanoparticles can be Au, ag, and a mixture of Au and Ag, or an alloy composition of Au or Ag and one or more of Al, zn, cu, cr, cd and Pt, wherein the Au or Ag accounts for 80% or more of the total weight of the alloy, and the Au or Ag aggregated metal nanoparticles have excellent light scattering effect. The red quantum dot light conversion layers 601, 621, the green quantum dot light conversion layers 602, 622, and the blue quantum dot light conversion layers may be prepared by a printing process.
The invention also provides a display device which comprises any display panel provided in the technical scheme.
It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (12)
1. A display panel, comprising a substrate base plate and a plurality of organic light emitting transistors, an insulating barrier layer and a black matrix on the substrate base plate;
Each organic light-emitting transistor comprises a grid electrode, a grid electrode insulating layer, an organic light-emitting layer, a source electrode and a drain electrode, wherein the grid electrode, the grid electrode insulating layer and the organic light-emitting layer are arranged in a stacked mode, the source electrode and the drain electrode are electrically connected with the organic light-emitting layer, and a gap formed through an etching process is formed between every two adjacent organic light-emitting layers;
the insulation isolation layer is filled in the gap and used for limiting the light emergent area of each organic light-emitting transistor;
The black matrix is positioned on the light emitting sides of the plurality of organic light emitting transistors, and the orthographic projection of the black matrix on the substrate covers the orthographic projection of the insulating isolation layer on the substrate;
the organic film layer is etched through a dry etching process to form a plurality of organic light emitting layers, and gaps are formed between two adjacent organic light emitting layers.
2. The display panel according to claim 1, wherein the insulating barrier layer is provided in the same layer as at least one insulating layer on a side of the organic light emitting layer facing away from the substrate.
3. The display panel according to claim 2, wherein the substrate is a transparent substrate, the organic light-emitting layer, the gate insulating layer and the gate electrode are sequentially formed on the substrate, and the source electrode and the drain electrode are located at a side of the organic light-emitting layer facing away from the substrate;
the display panel further comprises a packaging layer positioned on one side of the grid electrode, which is away from the substrate;
the insulating isolation layer is arranged on the same layer as the gate insulating layer, and/or the insulating isolation layer is arranged on the same layer as at least one layer of the packaging layer.
4. The display panel according to claim 3, wherein the organic light-emitting layers in the plurality of organic light-emitting transistors are organic light-emitting layers of the same color;
the display panel further comprises a color film layer positioned on one side, away from the organic light-emitting layer, of the substrate, the color film layer comprises a plurality of light-filtering units corresponding to the organic light-emitting layer one by one, and the black matrix is positioned between every two adjacent light-filtering units.
5. The display panel according to claim 2, wherein the gate electrode, the gate insulating layer, and the organic light emitting layer are sequentially formed on the substrate base plate;
the display panel further comprises an encapsulation layer positioned on one side of the organic light-emitting layer away from the substrate;
The insulating isolation layer and at least one layer of the packaging layer are arranged in the same layer.
6. The display panel of claim 5, wherein the source and drain electrodes are located on the same side of the organic light emitting layer; wherein,
The source electrode and the drain electrode are transparent films, or the source electrode and the drain electrode are opaque films.
7. The display panel according to claim 5, wherein the organic light-emitting layers in the plurality of organic light-emitting transistors are organic light-emitting layers of the same color;
the display panel further comprises a color film layer positioned on one side, away from the organic light-emitting layer, of the packaging layer, the color film layer comprises a plurality of light-filtering units corresponding to the organic light-emitting layer one by one, and the black matrix is positioned between every two adjacent light-filtering units.
8. The display panel according to claim 7, wherein a plurality of grooves are formed on a side of the encapsulation layer away from the organic light emitting layer, the grooves are in one-to-one correspondence with the organic light emitting layer, orthographic projections of each groove on the substrate are located between orthographic projections of a source electrode and a drain electrode of the same organic light emitting transistor on the substrate, and the plurality of filter units are disposed in the plurality of grooves in one-to-one correspondence.
9. The display panel according to claim 4 or 7, wherein the organic light emitting layers of the plurality of organic light emitting transistors are all blue light emitting layers, and the plurality of light filtering units include a red light filtering unit, a green light filtering unit and a hollowed-out area.
10. The display panel according to claim 4 or 7, wherein the organic light-emitting layers in the plurality of organic light-emitting transistors are each a white light-emitting layer;
The plurality of filter units comprise a red filter unit, a green filter unit and a blue filter unit.
11. The display panel according to any one of claims 1 to 3 and 5 to 6, wherein the organic light-emitting layer in the plurality of organic light-emitting transistors includes at least three color light-emitting layers.
12. A display device comprising a display panel according to any one of claims 1-11.
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| AU2003260959A1 (en) * | 2002-09-11 | 2004-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus and fabrication method of the same |
| CN111354775A (en) * | 2020-03-23 | 2020-06-30 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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| AU2003260959A1 (en) * | 2002-09-11 | 2004-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus and fabrication method of the same |
| CN111354775A (en) * | 2020-03-23 | 2020-06-30 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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