CN114148987B - Method for manufacturing micro-electromechanical system device, micro-electromechanical system device and electronic device - Google Patents
Method for manufacturing micro-electromechanical system device, micro-electromechanical system device and electronic device Download PDFInfo
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- CN114148987B CN114148987B CN202111315844.1A CN202111315844A CN114148987B CN 114148987 B CN114148987 B CN 114148987B CN 202111315844 A CN202111315844 A CN 202111315844A CN 114148987 B CN114148987 B CN 114148987B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 119
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000708 deep reactive-ion etching Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
公开了一种微机电系统装置的制造方法、微机电系统装置和电子设备。微机电系统装置包括薄膜型的微机电系统器件层，以及该制造方法包括：在微机电系统衬底上形成牺牲层；在牺牲层上形成微机电系统器件层；经由临时键合层将载体层临时键合在微机电系统器件层上，其中，载体层是透明的并且是刚性的；通过对牺牲层进行处理以释放微机电系统器件层；通过曝光从所释放的微机电系统器件层上对载体层进行解键合；以及去除临时键合层。
Disclosed are a method for manufacturing a micro-electromechanical system device, a micro-electromechanical system device, and an electronic device. The micro-electromechanical system device includes a thin-film type micro-electromechanical system device layer, and the manufacturing method includes: forming a sacrificial layer on a micro-electromechanical system substrate; forming a micro-electromechanical system device layer on the sacrificial layer; temporarily bonding a carrier layer to the micro-electromechanical system device layer via a temporary bonding layer, wherein the carrier layer is transparent and rigid; releasing the micro-electromechanical system device layer by processing the sacrificial layer; debonding the carrier layer from the released micro-electromechanical system device layer by exposure; and removing the temporary bonding layer.
Description
Technical Field
The present application relates to a method for manufacturing a mems device, and an electronic apparatus.
Background
Microelectromechanical systems (MEMS, micro-Electro-MECHANICAL SYSTEM), also called microelectromechanical systems, microsystems, micromechanical etc., refer to high-tech devices with dimensions of a few millimeters or even smaller.
During the fabrication of the mems device, the mems layer of the mems device is released by etching the sacrificial layer. Mems devices such as mems microphones, pressure sensors, thin film bulk acoustic resonators typically have thin film mems device layers. Thin film mems device layers have a large aspect ratio (i.e., surface size to thickness ratio). Thus, when the patterned MEMS device layer is released from the unpatterned sacrificial layer (typically silicon dioxide), the MEMS device layer may experience an unbalanced stress gradient. Thus, the MEMS device layers may be subject to stress concentrations or mechanical damage when released (sacrificial layer removed).
Such mems devices having thin film mems device layers may be mems microphones, thin film bulk acoustic resonators, piezoelectric pressure sensors, comb drive capacitance sensors (accelerometers, gyroscopes, etc.), spintronics mems sensors, etc.
Disclosure of Invention
The present application aims to provide a new solution for a microelectromechanical systems device.
According to a first aspect of the present disclosure, there is provided a method of manufacturing a microelectromechanical systems device, wherein the microelectromechanical systems device comprises a thin-film microelectromechanical systems device layer, and the method of manufacturing comprises forming a sacrificial layer on a microelectromechanical systems substrate, forming a microelectromechanical systems device layer on the sacrificial layer, temporarily bonding a carrier layer to the microelectromechanical systems device layer via a temporary bonding layer, wherein the carrier layer is transparent and rigid, releasing the microelectromechanical systems device layer by processing the sacrificial layer, debonding the carrier layer from the released microelectromechanical systems device layer by exposure, and removing the temporary bonding layer.
According to a second aspect of the present disclosure, there is provided a mems device manufactured using the manufacturing method described above.
According to a third aspect of the present disclosure, there is provided an electronic device comprising a microelectromechanical systems apparatus according to the above.
In embodiments herein, the support of the carrier layer is used to prevent stress from damaging the mems device layer during release, thereby ensuring mems device performance and/or yield.
Other features of the present disclosure and its advantages will become apparent from the following detailed description of exemplary embodiments of the disclosure, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the disclosure.
FIG. 1 shows a schematic diagram of a MEMS device upon release.
FIG. 2 illustrates a stress failure schematic of a MEMS device upon release.
Fig. 3-7 are schematic flow diagrams of a method of fabricating a microelectromechanical systems device according to an embodiment.
Fig. 8 is a schematic diagram of an electronic device according to one embodiment.
Reference numerals:
101. The semiconductor device comprises a substrate, 102, a sacrificial layer, 103, a micro-electromechanical system device layer, 104, a passivation layer, 105, a bonding pad, an interconnection structure layer, 106, a temporary protection layer, 107 back holes, 108, a sensing layer, 1, a substrate, 2, a sacrificial layer, 3, a micro-electromechanical system device layer, 4, a temporary bonding layer, 5, a carrier layer, 6, a back hole, 200, electronic equipment, 201 and a micro-electromechanical system device.
Detailed Description
Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.
It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
FIG. 1 shows a schematic diagram of a MEMS device upon release. FIG. 2 illustrates a stress schematic of a MEMS device upon release.
FIG. 1 shows a schematic diagram of a MEMS device prior to release. As shown in fig. 1, the mems device includes a substrate 101, a sacrificial layer 102, a mems device layer 103, a passivation layer 104, a pad and interconnect structure layer 105, and a sensing layer 108. In fig. 1, a back hole 107 is formed in a substrate 101. Optionally, a temporary protective layer 106 is formed over the MEMS device layer 103. The material of temporary protection layer 106 is typically photoresist.
The substrate 101 is, for example, a thin mems silicon substrate. The material of the sacrificial layer 102 is typically silicon dioxide, which has a high resistance to compression, typically being capable of withstanding pressures above 300 MPa. The mems device layer 103 is a mechanical structure layer of a mems device and may be, for example, a diaphragm, a cantilever, etc. The material of the mems device layer 103 may be silicon or polysilicon. Here, the mems device layer 103 is thin film with a large aspect ratio. The thin film mems device layer 103 can be damaged by the stress of the sacrificial layer 102. The material of the passivation layer 104 may be SiN x. The material of the bonding pad and interconnect structure layer 105 may be Cr/Ni/Au, etc. The sensing layer 108 is, for example, a unit for sensing mechanical changes. For example, in FIG. 1, the sense layer 108 is shown as a magnetic source and a magnetic resistance. The sensing layer 108 may also be other sensing structures.
FIG. 2 illustrates the MEMS device layer 103 breaking when released. For example, MEMS device layer 103 is patterned, while the underlying sacrificial layer is unpatterned. A back hole 107 is formed in the silicon substrate by front-to-back alignment lithography and Deep Reactive Ion Etching (DRIE). The back hole 107 stops at the sacrificial layer. The mems device layer 103 is typically designed to have low tensile stress. The sacrificial layer of silicon dioxide typically has a high compressive stress and is relatively thick (e.g., 0.5-2 microns), which creates a relatively large stress gradient. Thus, as shown in FIG. 2, MEMS device layer 103 is susceptible to fracture under such non-uniform stresses. The protective layer in fig. 1 is typically not rigid and therefore it does not completely protect the thin film mems device layer 103.
The inventors of the present invention propose a solution that uses a wafer support system to assist in release. Various embodiments are described below with reference to fig. 3-8.
Figures 3-7 illustrate a schematic flow diagram of a method of manufacturing a microelectromechanical systems device according to an embodiment.
As shown in fig. 3, a sacrificial layer 2 is formed on a mems substrate 1, and a mems device layer 3 is formed on the sacrificial layer 2.
The mems substrate 1 may be silicon, for example, with a thickness in the range 380-750 microns. The sacrificial layer 2 is for example silicon dioxide or a buried oxide. The mems device layer 3 may be a mems mechanical layer, for example, its material may be silicon, polysilicon or other material constituting a mechanical structure.
Further, similar to fig. 1, passivation layers, pads and interconnect structure layers, and sensing layers may also be included on the mems device layer 3. Their description is not repeated here.
The carrier layer 5 is then temporarily bonded to the mems device layer 3 via the temporary bonding layer 4. The carrier layer 5 is transparent and rigid. For example, the thickness of the carrier layer 5 is 300 to 700 μm. The carrier layer 5 may be a supporting wafer.
As will be understood by those skilled in the art, herein, "transparent" means that the carrier layer 5 is transparent to the light used for the debonding. By "rigid" is meant that upon removal of the sacrificial layer 2, the carrier layer 5 is sufficient to support the mems device layer 3 against stress upon release.
The material of the temporary bonding layer 4 may be, for example, photoresist, adhesive, or the like. The temperature at which temporary bonding is performed by the temporary bonding layer 4 is preferably less than 150 degrees. For example, the temporary bonding layer 4 has a thickness of between 1 and 10 microns, preferably between 2 and 5 microns, so that the problem of temperature scattering due to thermal insulation can be avoided.
Fig. 4 and 5 show the process of releasing the mems device layer 3 by processing the sacrificial layer 2.
As shown in fig. 4, the substrate 1 is processed to form the back hole 6. The substrate 1 may be thinned to a thickness of 50 to 250 microns by back grinding. The substrate 1 may also be polished if desired (e.g., the thickness of the substrate 1 to be formed is less than 100 microns). Next, patterning and etching may be performed by deep reactive ion etching DRIE to form the back hole 6. At this stage, the back hole 6 stops at the sacrificial layer 2. The material of the sacrificial layer 2 may be silicon dioxide, which may have a thickness of 0.5 to 2 microns. At this time, the carrier layer 5 stably supports the mems device layer 3, and thus, there is no additional stress concentration or damage in the mems device layer 3.
As shown in fig. 5, the mems device layer 3 is released. The sacrificial layer 2 is etched by reactive ion etching RIE or wet etching (e.g., using hydrofluoric acid HF or buffered oxide etchant BOE) to release the microelectromechanical system device layer 3. Since the low stress level mems device layer 3 is supported by the rigid carrier layer 5 (or carrier wafer), the high stress level sacrificial layer can be safely removed with reduced likelihood of damaging the mems device layer 3.
Fig. 6 illustrates the process of debonding the carrier layer 5 from the released mems device layer 3 by exposure. As indicated by the arrow in fig. 6, light for debonding, for example, laser light, ultraviolet light, or the like is irradiated from the carrier layer 5 side. The debonding occurs at the interface of the carrier layer 5 and the temporary bonding layer 4 due to the irradiation of light, and the carrier layer 5 and the temporary bonding layer 4 are separated.
Here, the temporary bonding layer 4 is softer relative to the carrier layer 5, and thus, upon exposure, the temporary bonding layer 4 may act as a stress buffer layer between the carrier layer 5 and the mems device layer 3, thereby avoiding damaging the mems device layer 3 upon debonding.
After debonding, the carrier layer 5 can be easily removed mechanically.
As shown in fig. 7, the temporary bonding layer 4 is removed. For example, the bonding layer 4 may be peeled off by oxygen plasma, solvent/chemical agent, or the like.
The MEMS device formed in the manner described above may be formed on a thinner MEMS substrate to form a non-destructive MEMS structure or a low stress/controllable stress MEMS structure. This is very advantageous for high performance mems devices, for example, for high performance microphones. In addition, this may increase the yield of the MEMS device. The mems device layers may have lower stress in the mems devices formed by the manner in the embodiments herein than the previous mems devices under the same conditions. Furthermore, the MEMS devices herein have differences from previous MEMS devices due to process differences, for example, where the temporary bonding layer is removed after the carrier layer is removed.
Fig. 8 shows a schematic diagram of an electronic device according to one embodiment disclosed herein. As shown in FIG. 8, the electronic device 200 may include a MEMS device 201, and the MEMS device 201 may be a MEMS device formed by a 3-7 process. The electronic device 200 may be a cell phone, tablet, wearable device, etc. The mems magnetic sensor 201 may be a microphone, a pressure sensor, an inertial sensor, or the like.
Although specific embodiments of the present disclosure have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the disclosure herein.
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111315844.1A CN114148987B (en) | 2021-11-08 | 2021-11-08 | Method for manufacturing micro-electromechanical system device, micro-electromechanical system device and electronic device |
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| CN202111315844.1A CN114148987B (en) | 2021-11-08 | 2021-11-08 | Method for manufacturing micro-electromechanical system device, micro-electromechanical system device and electronic device |
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| CN101213142A (en) * | 2005-06-30 | 2008-07-02 | 皇家飞利浦电子股份有限公司 | A method of manufacturing a mems element |
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| US6425971B1 (en) * | 2000-05-10 | 2002-07-30 | Silverbrook Research Pty Ltd | Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes |
| JP2003066858A (en) * | 2001-08-23 | 2003-03-05 | Sony Corp | Method of manufacturing thin-film device substrate |
| ATE519223T1 (en) * | 2005-11-11 | 2011-08-15 | Koninkl Philips Electronics Nv | METHOD FOR PRODUCING SEVERAL SEMICONDUCTOR ARRANGEMENTS AND CARRIER SUBSTRATE |
| EP2236456A1 (en) * | 2009-03-30 | 2010-10-06 | Nxp B.V. | Front end micro cavity |
| TWI592996B (en) * | 2009-05-12 | 2017-07-21 | 美國伊利諾大學理事會 | Printing assembly for ultra-thin micro-scale inorganic light-emitting diode for deformable and translucent displays |
| JP5010668B2 (en) * | 2009-12-03 | 2012-08-29 | 信越化学工業株式会社 | Manufacturing method of stacked semiconductor integrated device |
| US9221674B1 (en) * | 2014-08-04 | 2015-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing a microelectromechanical systems (MEMS) device with different electrical potentials and an etch stop |
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| CN101213142A (en) * | 2005-06-30 | 2008-07-02 | 皇家飞利浦电子股份有限公司 | A method of manufacturing a mems element |
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