CN114137280A - A hall effect current sensor - Google Patents
A hall effect current sensor Download PDFInfo
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- CN114137280A CN114137280A CN202111424812.5A CN202111424812A CN114137280A CN 114137280 A CN114137280 A CN 114137280A CN 202111424812 A CN202111424812 A CN 202111424812A CN 114137280 A CN114137280 A CN 114137280A
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- 230000005355 Hall effect Effects 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 61
- 239000010949 copper Substances 0.000 claims abstract description 61
- 238000002955 isolation Methods 0.000 claims abstract description 43
- 238000005538 encapsulation Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 9
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 description 19
- 239000004020 conductor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
本发明公开了一种霍尔效应电流传感器，包括封装外壳，封装外壳用于封装引线框架，引线框架底部设置为低阻抗铜排，低阻抗铜排上设置有传感器硅芯片，低阻抗铜排和传感器硅芯片之间设置有绝缘隔离芯片，有效降低传感器芯片与铜排焊接时的接触电阻，增加了传感器散热面积，信号引脚外露，形成大面积导线焊接点，在低阻抗铜排与传感器磁芯片之间设置绝缘隔离芯片实现电磁屏蔽，增加传感器散热性能，提升传感器硅芯片的信噪比，减少低阻抗铜排的电流电压波动干扰到传感器硅芯片的正常工作。
The invention discloses a Hall effect current sensor, comprising an encapsulation shell, the encapsulation shell is used to encapsulate a lead frame, the bottom of the lead frame is provided with a low-impedance copper bar, a sensor silicon chip is arranged on the low-impedance copper bar, the low-impedance copper bar and An insulating isolation chip is arranged between the sensor silicon chips, which effectively reduces the contact resistance when the sensor chip and the copper bar are welded, increases the heat dissipation area of the sensor, and exposes the signal pins to form a large-area wire welding point. An insulating isolation chip is set between the chips to achieve electromagnetic shielding, which increases the heat dissipation performance of the sensor, improves the signal-to-noise ratio of the sensor silicon chip, and reduces the current and voltage fluctuations of the low-impedance copper bars that interfere with the normal operation of the sensor silicon chip.
Description
Technical Field
The invention relates to an integrated circuit packaging structure, in particular to a Hall effect current sensor.
Background
The Hall effect current sensor of single-chip no magnetic core is because of its small, advantage with low costs, uses more and more extensively, and at electric tool, the electric motor car, the market share of converter is more and more high. The sensor chip with the largest use amount at present adopts packages such as SOP8, SOW16 and the like, and is influenced by a chip structure, the resistance of a welding pin and an internal conductor of the chip is large and is about 500-1000 mu omega, in addition, the packaging structure is not beneficial to heat dissipation, and the detection current range is limited to be within 100A. Copper bars and magnetic cores are integrated in products such as ACS770 and the like which are promoted by AllegroMicrosystems in the United states, the resistance of a copper bar lead is about 100 mu omega, the contact area is relatively small, the maximum current is limited to be within 200A, the size is large, the production process is complex, and the production cost is high.
Generally, the current of detecting 300A needs to be realized by matching a 1m omega shunt resistor with a precise operational amplifier, and under the condition of 300A, the heating power of the shunt reaches up to 90W, the temperature is quite high, the stability of a system can be influenced, meanwhile, the efficiency of a driver is also reduced, a sensor chip is close to a current copper bar, and the normal work of the chip is easily interfered by the fluctuation of the current and the voltage of the copper bar.
Disclosure of Invention
The invention aims to solve the technical problems that the internal heat dissipation performance of a sensor is poor, and an internal chip is easily subjected to electromagnetic interference, and aims to provide a Hall effect current sensor, reduce the size of the sensor, increase the power density, realize electromagnetic shielding of the internal sensor chip and increase the heat dissipation performance of the sensor.
The invention is realized by the following technical scheme:
the Hall effect current sensor comprises an encapsulation shell, wherein the encapsulation shell is used for encapsulating a lead frame, the bottom of the lead frame is provided with a low-impedance copper bar, a sensor silicon chip is arranged on the low-impedance copper bar, and an insulation isolation chip is arranged between the low-impedance copper bar and the sensor silicon chip.
The invention arranges the packaging shell for packaging the lead frame, effectively reduces the contact resistance when the sensor chip is welded with the copper bar, the bottom of the lead frame is provided with the low-impedance copper bar, increases the heat dissipation area of the sensor, the sensor silicon chip is arranged on the low-impedance copper bar, the insulation isolation chip is arranged between the low-impedance copper bar and the sensor silicon chip, so as to realize the electrical insulation between the sensor silicon chip and the copper bar, in order to improve the signal-to-noise ratio of the sensor silicon chip, the sensor silicon chip needs to be close to the low-impedance copper bar as much as possible to obtain the maximum magnetic field, however, the problem that the normal operation of the sensor silicon chip is easily interfered by the fluctuation of the current and the voltage of the low-impedance copper bar after the sensor silicon chip and the low-impedance copper bar are close to each other exists, and an electromagnetic shielding layer needs to be arranged on the insulating isolation chip between the low-impedance copper bar and the sensor silicon chip to protect the sensor silicon chip from normally operating.
As a further description of the invention, the bottom of the packaging shell is provided with an opening, the signal pins extend out of the packaging shell through the opening arranged at the bottom of the packaging shell, and the part of the signal pins which does not extend out of the packaging shell is connected with the sensor silicon chip through a binding wire. The signal pins extend out of the packaging shell through the opening formed in the bottom of the packaging shell to be exposed, a large-area wire welding point is formed, welding contact resistance of the chip and the PCB is effectively reduced, meanwhile, the heat conduction area of the chip is increased, and thermal resistance is reduced.
As a further description of the invention, the insulating isolation chip is a silicon dioxide film, and a metal film is arranged on the surface of the insulating isolation chip. The silicon dioxide film improves the insulating capability of the insulating isolation chip to ensure that the isolation voltage between the copper bar and the silicon chip can reach 4800VRMS, and the metal film is prepared on the surface of the insulating isolation chip and used as an electromagnetic shielding layer to reduce the interference of an electromagnetic field to the sensor silicon chip.
As a further description of the invention, the distance between the edge of the metal film and the edge of the isolation chip is not less than 200um, the corners of the metal film are all provided with round chamfers, and the radius of the chamfers is not less than 50 um. The arrangement of the shape and position of the metal film is used for improving the stability of the isolation voltage.
As a further description of the present invention, the sensor of the sensor silicon chip is a differential hall sensor, a plurality of hall sensing points are disposed on the sensor silicon chip, the hall sensing points are respectively located on two sides of the magnetic gathering portion of the copper bar, and the hall sensing points are located on the surface of the conductor at about 280 um. The anti-interference capability and the common mode rejection capability of noise and external interference are enhanced by arranging the differential Hall sensor, the magnetic coupling degree is improved through the Hall sensing points, and the signal-to-noise ratio of the sensor silicon chip is improved.
As a further description of the invention, the two sides of the metal film are provided with grooves which are concave to the middle point, and the grooves are arranged below the Hall sensing points. The eddy current formed by the metal film under the high-frequency magnetic field is prevented from interfering the normal work of the Hall sensing point of the sensor silicon chip, and the bandwidth of the differential Hall sensor is reduced.
As a further description of the invention, a DAF film is arranged between the low-impedance copper bar and the insulating isolation chip, and a DAF film is arranged between the insulating isolation chip and the sensor silicon chip. The isolation chip and the sensor silicon chip are adhered to the lead frame through the DAF film, so that the stability of internal packaging is improved, and the sensor silicon chip is close to the low-impedance copper bar as much as possible.
As further description of the invention, the insulating isolation chip is provided with three layers which are sequentially made of aluminum, silicon dioxide and silicon, and the insulating isolation chip is obtained by growing a thick oxide layer on the surface of a common silicon wafer, so that the anti-electromagnetic interference capability of the insulating isolation chip is improved.
As a further description of the invention, the lead frame and the sensor silicon chip are encapsulated with a molding compound. A reliable chip is formed by wrapping, and the firmness of the sensor package is enhanced.
As a further description of the present invention, the creepage distance between the low impedance copper bar and the signal conductor is greater than 8.3 mm. The requirement of enhanced isolation withstand voltage is met, and the electrical insulation capability of 4800VRMS is realized.
Compared with the prior art, the invention has the following advantages and beneficial effects:
effectively reduce the contact resistance when sensor silicon chip and low impedance copper bar welding, increase heat radiating area, improve electromagnetic shield ability, promote isolation voltage's stability, reduced the sensor volume, help promoting power density, the user of being convenient for uses.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other related drawings can be obtained from these drawings without inventive effort. In the drawings:
FIG. 1 is a side view of a current sensor in an embodiment of the invention;
FIG. 2 is a schematic diagram of an internal structure in an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a lead frame according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a planar structure of an isolated chip according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a bottom surface package structure of a sensor according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a sensor top surface package structure in an embodiment of the invention.
Reference numbers and corresponding part names in the drawings:
the method comprises the following steps of 1-a lead frame, 2-a signal pin, 3-a packaging shell, 4-a binding line, 11-a low-impedance copper bar, 12-an insulating isolation chip, 13-a sensor silicon chip, 131-a Hall sensing point and 14-a DAF film.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
As shown in fig. 1 and fig. 2, the present embodiment provides a hall effect current sensor, which includes a package housing 3, the package housing 3 is used for packaging a lead frame 1, a low-impedance copper bar 11 is disposed at the bottom of the lead frame 1, a sensor silicon chip 13 is disposed on the low-impedance copper bar 11, and an insulating isolation chip 12 is disposed between the low-impedance copper bar 11 and the sensor silicon chip 13. In the prior art, the resistance of a copper bar lead is about 100 mu omega, the contact area is relatively small, the maximum current is limited within 200A, the volume is large, the production process is complex, and the production cost is high, therefore, the low-impedance copper bar 11 is arranged at the bottom of the lead frame 1, the thickness of the copper bar integrated in the low-impedance copper bar 11 reaches 1.27mm, the length is about 0.4mm, the width is about 2.0mm, the on-resistance is as low as 20 mu omega, the contact area of the lead and a PCB is more than 24mm ^2, the measurement loss is low, the heat generation is small, the contact resistance during the sensor welding can be effectively reduced, the contact area of the low-impedance copper bar 11 during the sensor welding is reduced, the thermal resistance of the low-impedance copper bar 11 is lower than 5 ℃/W, the continuous measurement current can reach 300A, the surge impact current can reach 100KA, and the traditional Hall current sensor module and shunt scheme can be replaced, the measurement range of 20-300A is realized, an opening is arranged at the bottom of a packaging shell 3, a signal pin 2 extends out of the packaging shell 3 through the opening arranged at the bottom of the packaging shell 3, the part, which does not extend out of the packaging shell 3, of the signal pin 2 is connected with a sensor silicon chip 13 through a binding line 4, the signal pin 2 is of a trapezoidal structure, the surface area of the signal pin 2 is increased while the occupied area of the signal pin 2 is not increased, a large-area lead welding point is formed, the heat dissipation area of the whole sensor is increased by increasing the welding area, the working performance and the service life of the sensor are improved, meanwhile, the contact resistance when the sensor silicon chip 13 is welded with the signal pin 2 can be effectively reduced, the internal space of the sensor silicon chip 13 is narrow, in order to improve the signal-to-noise ratio of the sensor silicon chip 13, the sensor silicon chip 13 needs to be as close to a copper bar 11 as much as possible during packaging, the sensor silicon chip 13 can obtain the maximum magnetic field, after the sensor silicon chip 13 is close to the low-impedance copper bar 11, the current and voltage fluctuation of the low-impedance copper bar 11 is easy to interfere with the normal work of the sensor silicon chip 13, therefore, the insulating isolation chip 12 is arranged between the low-impedance copper bar 11 and the sensor silicon chip 13 to realize electromagnetic shielding, the condition that the current and voltage fluctuation of the low-impedance copper bar 11 interferes with the normal work of the sensor silicon chip 11 due to the fact that the sensor silicon chip 13 is too close to the low-impedance copper bar 11 is reduced, the sensor silicon chip 13 is connected with the lead frame 1 and the signal pin 2 through the binding wire 4 to increase the stability, the lead frame 1 and the sensor silicon chip 13 are wrapped by plastic packaging materials, a reliable chip is formed through wrapping, and the stability of the sensor is enhanced.
As shown in fig. 3, the structure of the lead frame is sequentially a low-impedance copper bar 11, an insulating isolation chip 12, and a sensor silicon chip 13, a DAF film 14 is arranged between the low-impedance copper bar 11 and the insulating isolation chip 12 to fixedly bond the insulating isolation chip 12 to the low-impedance copper bar 11, the DAF film 14 is arranged between the insulating isolation chip 12 and the sensor silicon chip 13, the insulating isolation chip 12 and the sensor silicon chip 13 are bonded to the lead frame 1 through the DAF film 14, the DAF film 14 is used for bonding the insulating isolation chip 12 and the sensor silicon chip 13 to the low-impedance copper bar 11, so as to reduce the distance between the sensor silicon chip 13 and the low-impedance copper bar 11 as much as possible, and while ensuring the stability of the internal packaging structure, the sensor silicon chip 13 is made to be as close to the low-impedance copper bar 11 as much as possible, and the signal-to-noise ratio of the sensor is improved.
As shown in fig. 4, in order to ensure that the isolation voltage between the low-impedance copper bar 11 and the sensor silicon chip 13 can reach 4800VRMS, a layer of metal film 121 is arranged on the surface of the insulating isolation chip 12 and used as an electromagnetic shielding layer, the insulating induction chip 12 is a silicon dioxide film, the silicon chip can be a silicon dioxide film obtained by silicon oxidation on the surface of the sensor silicon chip 13, the surface of the insulating isolation chip 12 is the metal film 121, the edge distance between the edge of the metal film and the edge of the insulating isolation chip 12 is not less than 200um, the corners of the metal film are all provided with round chamfers, and the radius of the chamfers is not less than 50 um. The silicon chip 13 is a differential Hall sensor, the silicon chip 13 is provided with a plurality of Hall sensing points 131, the Hall sensing points 131 are respectively arranged at two sides of the magnetism gathering part of the low-impedance copper bar 11, the differential Hall sensor responds to the space difference of magnetic fields, the differential magnetic field generated by sensing the current of a lead wire counteracts the external interference passing through the magnetic field, the detection precision is improved by arranging the Hall sensing points 131, the Hall sensing points 131 are positioned on the surface of a conductor by about 280 microns, the magnetic coupling is improved, the signal-to-noise ratio of the sensor is improved, the stability of the isolation voltage is improved, two sides of a metal film 121 arranged on the surface of an insulating isolation chip 12 are provided with grooves which are arranged below the Hall sensing points 131, so that a certain gap is formed below the Hall sensing points 131, the eddy current formed by the metal film under the high-frequency magnetic field is prevented from interfering the normal work of the Hall sensing point 131 of the sensor silicon chip 13, and the bandwidth of the differential Hall sensor is reduced.
In some possible embodiments, the low-impedance copper bar 11 is composed of multiple layers of copper conductors, and the creepage distance between the low-impedance copper bar 11 and the signal pin 2 is greater than 8.3mm, so that the requirement of enhanced isolation and voltage resistance is met, and the 4800V electrical insulation capability is realized.
In some possible embodiments, the isolated chip 12 is provided with three layers, wherein the gas material is aluminum, silicon dioxide and silicon in sequence from top to bottom, and the thickness of the third silicon layer is reduced to enhance the coupling magnetic field of the isolated chip 12.
In some possible embodiments, limiting holes are arranged between the package housing 3 and the lead frame 1 and between the package housing and the signal pin 2, the lead frame 1 and the signal pin 2 are fixed through the limiting holes, and meanwhile the lead frame 1 and the signal pin 2 are connected through the binding wire 4, so that the internal structure of the sensor is prevented from being damaged due to movement, the function is not complete, and the service life of the sensor is prolonged.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111424812.5A CN114137280A (en) | 2021-11-26 | 2021-11-26 | A hall effect current sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111424812.5A CN114137280A (en) | 2021-11-26 | 2021-11-26 | A hall effect current sensor |
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| CN202111424812.5A Pending CN114137280A (en) | 2021-11-26 | 2021-11-26 | A hall effect current sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115497903A (en) * | 2022-10-14 | 2022-12-20 | 成都芯进电子有限公司 | Packaging chip with electromagnetic shielding and voltage-resistant isolating device structure and packaging method thereof |
| CN118884013A (en) * | 2024-09-27 | 2024-11-01 | 苏州矩阵光电有限公司 | Hall current sensor and preparation method thereof |
| WO2025028547A1 (en) * | 2023-07-31 | 2025-02-06 | 旭化成エレクトロニクス株式会社 | Electric current sensor |
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