CN114136510B - Small-sized pressure sensor based on SOI sensitive chip - Google Patents
Small-sized pressure sensor based on SOI sensitive chip Download PDFInfo
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- CN114136510B CN114136510B CN202111479212.9A CN202111479212A CN114136510B CN 114136510 B CN114136510 B CN 114136510B CN 202111479212 A CN202111479212 A CN 202111479212A CN 114136510 B CN114136510 B CN 114136510B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 86
- 239000010703 silicon Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000005394 sealing glass Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 239000000377 silicon dioxide Substances 0.000 claims description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims description 29
- 239000012528 membrane Substances 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000003068 static effect Effects 0.000 abstract description 4
- 238000009530 blood pressure measurement Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000002146 bilateral effect Effects 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 108010053481 Antifreeze Proteins Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/005—Non square semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A pressure sensing diaphragm (4) is arranged in a micro-cavity of a substrate silicon (10) based on an SOI sensitive chip, a cofferdam (1) is arranged on the back of the substrate silicon, sensitive bridge resistors R1-R4 and interconnection wires (2) are arranged in the pressure sensing diaphragm area, two ends of the pressure sensing diaphragm area are respectively connected with the sensitive bridge resistors, interconnection wires (6) are respectively arranged in the pressure sensing diaphragm area and are connected with the other ends of the corresponding sensitive bridge resistors, a micro-cavity (51) is arranged in a back sealing glass (50) connected with the cofferdam to form a pressure reference cavity, electrode pins extend into through holes (52) in the corresponding sensitive chip, and the electrode pins (53) are electrically connected with a bonding pad (3). The invention has the following advantages: the wide coverage and high overload capacity of high pressure range with higher forward/reverse symmetry consistency of linear piezoresistive sensitivity; the sensor is miniaturized and lightweight, and the natural frequency of the sensor is close to the natural frequency of a chip by the package without a tube seat, so that the sensor is compatible with static/dynamic two-state and is especially suitable for high-frequency dynamic pressure measurement.
Description
Technical Field
The invention belongs to the technical field of silicon-based micro-electro-mechanical sensors, and particularly relates to an SOI pressure sensitive chip sensor of a cable system with two-way symmetrical and consistent linear piezoresistive sensitivity.
Background
The conventional silicon-based piezoresistive pressure sensor takes a sensitive electric bridge surface of a sensitive chip as a pressure measuring cavity, and the chip package adopts liquid or colloid materials to isolate electronic elements and components from a pressure medium to be measured and the environment. The sensor with the packaging structure has a plurality of limitations on functions and performances, so that the volume scale of the pressure sensor is larger than the scale of the sensitive chip by several times, and the sensor is not beneficial to miniaturization. Meanwhile, the inherent limitation and degradation effects of physical and chemical characteristics of liquid or colloid, such as the characteristics of liquid or colloid thermal characteristics, viscosity, inertia and the like, can increase additional errors of initial thermal drift, thermal hysteresis and the like of the packaged sensitive chip, and the adaptability of harsh environments such as dynamic frequency response, higher or lower temperature, vibration, impact and the like of the sensor is restricted and degraded.
Disclosure of Invention
The invention aims to provide a cable-line SOI piezoresistive pressure sensor, which aims to solve the defects of large size, and easy degradation of solid sealing liquid or colloid of the pressure sensor in the prior art.
The technology adopted by the invention is as follows:
a small-sized pressure sensor based on SOI sensitive chip is characterized by comprising the following components:
A. an SOI pressure sensitive chip comprising,
1) The substrate silicon is provided with an inverted trapezoid microcavity on the front surface, and a pressure sensing membrane is formed in the bottom area of the inverted trapezoid microcavity; the back of the substrate silicon is provided with a top silicon cofferdam surrounding the substrate silicon, the pressure sensing diaphragm is positioned in the central area of the top silicon cofferdam, and a silicon dioxide layer is arranged on the top silicon cofferdam;
2) The pressure sensing membrane area on the back of the substrate silicon is provided with four strip-shaped sensing bridge resistors R1-R4 which are transversely parallel, the sensing bridge resistors are symmetrically arranged in the center of the pressure sensing membrane area, and a silicon dioxide layer is arranged on each sensing bridge resistor;
3) The back of the substrate silicon is positioned in the pressure sensing diaphragm area, two oblique symmetrical angles along the pressure sensing diaphragm area are respectively provided with a linear top silicon interconnection line, an included angle between the linear top silicon interconnection line and the sensitive bridge resistor is 45 degrees, the end part of the linear top silicon interconnection line positioned in the pressure sensing diaphragm area is provided with a Z-shaped interconnection line, two ends of the Z-shaped interconnection line are respectively connected with one end of the adjacent corresponding sensitive bridge resistor, a silicon dioxide layer is arranged on the linear top silicon interconnection line and the Z-shaped interconnection line, the end part of the linear top silicon interconnection line positioned outside the pressure sensing diaphragm area is provided with a bonding pad, and the bonding pad penetrates through the silicon dioxide layer to be connected with the linear top silicon interconnection line;
4) In the pressure sensing membrane area of two straight-shaped top layer silicon interconnection line bilateral symmetry, respectively made a symmetrical X style of calligraphy top layer silicon interconnection line, two inner of X style of calligraphy top layer silicon interconnection line are connected with the corresponding sensitive bridge resistance other end of two intervals respectively, and two outer ends of X style of calligraphy top layer silicon interconnection line are assembled into the link respectively outside the pressure sensing membrane area through excessive lead wire, and the silicon dioxide layer has been made on X style of calligraphy top layer silicon interconnection line and its excessive lead wire, and the link system has the pad, and the pad passes the silicon dioxide layer and links to each other with excessive lead wire link.
The top silicon cofferdam, the top silicon interconnection line and the sensitive bridge resistor are made of high-concentration doped silicon.
The middle part of the Z-shaped interconnection line is connected with the inner end part of the linear top silicon interconnection line through an L-shaped transition line, and a silicon dioxide layer is arranged on the L-shaped transition line;
5) The top silicon cofferdam 1 and the silicon dioxide layers on the surfaces of all bonding pads are connected with back sealing glass, micro-cavities are formed in the parts, corresponding to the pressure sensing membrane areas, of the back sealing glass, the micro-cavities form a chip pressure reference cavity, and through holes are respectively formed in the parts, corresponding to the back sealing glass and each bonding pad.
B. Small-sized inverted alloy tube seat
1) The inner cavity of the alloy tube seat is provided with an insulating material with a main body of hard glass or ceramic brittleness, and the front surface of the insulating material in the alloy tube seat is provided with an insulating powder sealing layer;
as a carrier for inverted fusion packaging of the chip, the sensor can be used in a high-temperature application range of the sensor for a long time, and the insulation resistance and the pressure resistance and the air tightness are not degraded; the tube seat alloy shell can be suitable for high temperature and alternating pressure load environments for a long time, and has no creep deformation, fatigue and oxidative discoloration in elasticity and strength;
2) In the connection of the insulating material and the insulating powder sealing layer of the alloy tube seat, a group of composite electrodes are formed by metal hoop tubes and electrode pins, each electrode pin is respectively embedded and welded in the corresponding metal hoop tube and has good electric contact, each electrode pin extends out of the insulating powder sealing layer and extends into a through hole in the corresponding sensitive chip to be coaxial with the metal bonding pad, and the electrode pins are electrically connected with the bonding pad after the conductive powder in the through hole is melted;
3) And the insulating powder sealing layer and the sintered back sealing glass are connected with the alloy tube seat into a whole.
The invention has the following advantages:
1) The sensor inherits the advantages and advantages of the universality of the SOI pressure sensitive chip with the consistent forward/reverse symmetry of the linear piezoresistive sensitivity, and has the wide coverage and high overload capacity of three series of gauge pressure (including negative pressure), absolute pressure and differential pressure and low, medium and high pressure ranges;
2) The maximum plane dimension of the sensor is equal to the surface dimension of the chip, and the sensor is a minimized and lightweight sensor and is suitable for pressure measurement of point-to-point and in-situ or sub-in-situ;
3) The sensor can stably and reliably work in an environment of a high-wide temperature area below the softening point of the material by utilizing rigid sealing processes such as static electricity, sintering, embedded pressure welding and the like;
4) The non-tube base package makes the natural frequency of the sensor approach to the natural frequency of the chip, and is compatible with static/dynamic two-state, especially suitable for high-frequency dynamic pressure measurement.
Drawings
FIG. 1 is a schematic top-level silicon planar view of an SOI piezoresistive pressure sensitive die of the present invention;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
FIG. 3 is a semi-sectional perspective view of FIG. 1;
fig. 4 is a cross-sectional view of fig. 2 with a sintered cable ferrule tube added.
The SOI piezoresistive pressure sensor of the cable system is characterized by comprising the following components:
A. an SOI pressure sensitive die, as shown in figures 1 and 2, includes,
1) The substrate silicon 10, the front of which is provided with an inverted trapezoid microcavity 20, and the bottom area of the inverted trapezoid microcavity forms a pressure sensing diaphragm 4; the back of the substrate silicon is provided with a top silicon cofferdam 1 surrounding the substrate silicon, a pressure sensing diaphragm 4 is positioned in the central area of the top silicon cofferdam, and a silicon dioxide layer 8 is arranged on the top silicon cofferdam;
2) The pressure sensing membrane area on the back of the substrate silicon is provided with four strip-shaped sensing bridge resistors R1-R4 which are transversely parallel, the sensing bridge resistors are symmetrically arranged in the center of the pressure sensing membrane area, and a silicon dioxide layer 8 is arranged on each sensing bridge resistor;
3) The back of the substrate silicon is positioned in a pressure sensing membrane area, two oblique symmetrical angles along the pressure sensing membrane area are respectively provided with a linear top silicon interconnection line 2, an included angle between the linear top silicon interconnection line and the sensitive bridge resistor is 45 degrees, the end part of the linear top silicon interconnection line positioned in the pressure sensing membrane area is provided with a Z-shaped interconnection line 5, the two ends of the Z-shaped interconnection line are respectively connected with one end of the adjacent corresponding sensitive bridge resistor, the upper part of the linear top silicon interconnection line and the Z-shaped interconnection line thereof is provided with a silicon dioxide layer, the end part of the linear top silicon interconnection line positioned outside the pressure sensing membrane area is provided with a bonding pad 3, and the bonding pad passes through the silicon dioxide layer and is connected with the linear top silicon interconnection line;
4) In the pressure sensing membrane area of two straight style of calligraphy top layer silicon interconnection line bilateral symmetry, respectively make a symmetrical X style of calligraphy top layer silicon interconnection line 6, two inner of X style of calligraphy top layer silicon interconnection line are connected with the corresponding sensitive bridge resistance other end of two intervals respectively, and two outer ends of X style of calligraphy top layer silicon interconnection line are assembled into the link respectively outside the pressure sensing membrane area through excessive lead wire 7, are equipped with silicon dioxide layer 8 on X style of calligraphy top layer silicon interconnection line and its excessive lead wire, and the link is equipped with bonding pad 3, and the bonding pad passes silicon dioxide layer and links to each other with excessive lead wire link.
The top silicon cofferdam, the top silicon interconnection line and the sensitive bridge resistor are made of high-concentration doped silicon.
The middle part of the Z-shaped interconnection line is connected with the inner end part of the I-shaped top silicon interconnection line through an L-shaped transition line 2a, and a silicon dioxide layer is arranged on the L-shaped transition line 2 a;
5) The silicon dioxide layers 8 on the surfaces of the top silicon cofferdam 1 and all the bonding pads 3 are connected with back sealing glass 50, micro-cavities 51 are formed in the parts, corresponding to the pressure sensing membrane areas, of the back sealing glass, the micro-cavities 51 form a chip pressure reference cavity, and through holes 52 are formed in the parts, corresponding to the bonding pads, of the back sealing glass.
B. Small-sized flip alloy tube seat 60
1) The inner cavity of the alloy tube seat 60 is provided with a brittle insulating material 61 with a main body of hard glass or ceramic, and the front surface of the insulating material 61 in the alloy tube seat 60 is provided with an insulating powder sealing layer 64;
as a carrier for inverted fusion packaging of the chip, the sensor can be used in a high-temperature application range of the sensor for a long time, and the insulation resistance and the pressure resistance and the air tightness are not degraded; the tube seat alloy shell can be suitable for high temperature and alternating pressure load environments for a long time, and has no creep deformation, fatigue and oxidative discoloration in elasticity and strength;
2) In the connection of the insulating material 61 and the insulating powder sealing layer 64 of the alloy tube seat, a group of composite electrodes are formed by metal hoop tubes 63 and electrode pins 62, each electrode pin is respectively embedded and welded in the corresponding metal hoop tube and has good electric contact, each electrode pin respectively extends out of the insulating powder sealing layer 64 and extends into a through hole 52 in the corresponding sensitive chip to be coaxial with the metal bonding pad 3, and the electrode pins 62 are electrically connected with the bonding pad 3 after the conductive powder 53 arranged in the back sealing glass through hole 52 is melted.
3) The insulating frit seal 64 and the sintered back seal glass 50 are integrally connected to the alloy tube socket 60.
The electrode pins 62 with submicron diameters have no oxidation or discoloration on the high-temperature surfaces, no polishing or electroplating is needed, each electrode pin is respectively and coaxially connected with a metal bonding pad in the chip, and the suspension height of each electrode pin is matched with the depth and the scale of a plurality of through holes of the back sealing glass of the chip;
the group of metal hoop pipes 63, the hoop pipe embedding part is used as a terminal of external electric connection, and has reliable connection strength and stability;
the preparation temperature of the tube seat is far higher than the temperature of inverted fusion sealing of the chip, the airtight pressure-resistant strength of the heterogeneous sealing interface is higher than the upper limit of the rated quantity of overload of the measured pressure, and the latter process is completely compatible with the former process;
the radial dimension of the tube seat and the appearance dimension of the chip surface are the same unit and magnitude.
The invention also provides a preparation method of the cable line system SOI piezoresistive pressure sensor, which comprises the following steps:
1. a process for fabricating an SOI piezoresistive pressure sensitive die, comprising the steps of:
1) The epitaxial process precisely controls the final thickness, uniformity and consistency of the top silicon of the SOI wafer;
2) The SOI pressure sensitive chip wafer and the back seal glass graphical layout are designed;
3) Precisely controlling the thermal growth of a silicon dioxide layer consuming the thickness of the top silicon of the SOI wafer;
4) The temperature coefficient of diffusion resistance can be approximately counteracted with the temperature coefficient of piezoresistance effect by one-time concentrated boron impurity ion implantation of the whole area of the top silicon surface layer;
5) Ion implantation of near-solid-solubility high-concentration boron impurities in the top silicon region except for the sensitive bridge resistance;
6) High-temperature heat activation treatment of the top silicon concentrated boron and high-concentration boron impurity non-oxidizing atmosphere;
7) Depositing a silicon dioxide layer by an LPCVD method;
8) Sequentially dry over-etching the silicon dioxide layer on the top silicon layer, etching the sensitive bridge, back sealing the cofferdam pattern and the bonding pad lead hole pattern;
9) The PCVD method deposits a high-temperature resistant alloy bonding pad multilayer film or a single-layer aluminum bonding pad film used in a high-wide temperature area;
10 Dry etching the metal film pad pattern;
11 Dry etching the silicon dioxide layer and silicon dioxide on the substrate silicon to manufacture a chemical wet etching window pattern of the inverted trapezoid pressure sensing diaphragm;
12 Potassium hydroxide liquid anisotropically corroding the substrate silicon, and defining the surface scale of the pressure sensing diaphragm by the undercut boundary of the bottom surface of the inverted trapezoid cavity;
13 Micro-concave cavities of optical cold-processing back-sealed glass wafers, electrode and through hole arrays in the atmosphere and smooth surfaces;
14 The contact interfaces among the static bonding sealing chip, the top silicon on the periphery of the bonding pad and the glass wafer form a chip pressure reference cavity, and the back sealing flip-chip pressure sensitive chip wafer preparation process is completed;
15 Dicing the die wafer into back-sealed flip-chip pressure sensitive die.
2. Manufacturing an alloy tube seat and a pressure sensitive chip;
3) Designing specification parameters of the insulating blank and the conductive powder;
the method comprises the steps of cleaning the surfaces of chips in a batch dry method;
secondly, the back sealing glass of the chip faces upwards and is inversely arranged in a sintering mold according to a specified direction;
thirdly, sealing the open ends of the through holes of the plurality of electrodes of the glass from the back of the chip, and accurately filling the same amount of conductive powder;
accurately placing the insulating blanks on the chip, and aligning the upper electrode through holes and the lower electrode through holes one by one;
fifthly, placing the tube seat on the insulating blank sheet, and accurately, synchronously and parallelly inserting a plurality of electrode pins into the through holes of the back sealing glass electrodes of the conductive powder chip;
the upper cover of the die is buckled, a proper amount of pressing blocks with the weight are placed on the die, and the sintering die is stably pushed into a constant temperature area of the sintering furnace at a constant speed;
vacuum sintering is carried out at a constant temperature higher than the melting points of the insulating blank and the conductive powder, and meanwhile, the inverted seamless sealing of the chip back sealing glass and the tube seat and the electric connection of the chip metal bonding pad and the electrode pin suspending the tube seat are finished;
and heat treating in an inert atmosphere at a temperature below the softening point of the insulating sheet blank;
and after the temperature of the SOI chip is reduced to room temperature, the miniature pressure sensor with the linear piezoresistive sensitivity in the positive/negative bilateral symmetry consistent SOI chip inverted package is taken down from the sintering die.
Claims (3)
1. A small-sized pressure sensor based on SOI sensitive chip is characterized by comprising the following components:
A. an SOI pressure sensitive chip comprising,
1) The substrate silicon (10) is provided with an inverted trapezoid microcavity (20) on the front surface, and the bottom area of the inverted trapezoid microcavity forms a pressure sensing diaphragm (4); the back of the substrate silicon is provided with a top silicon cofferdam (1) surrounding the substrate silicon, a pressure sensing diaphragm (4) is positioned in the central area of the top silicon cofferdam, and a silicon dioxide layer (8) is arranged on the top silicon cofferdam;
2) The pressure sensing membrane area on the back of the substrate silicon is provided with four strip-shaped sensing bridge resistors R1-R4 which are transversely parallel, the sensing bridge resistors are symmetrically arranged in the center of the pressure sensing membrane area, and a silicon dioxide layer (8) is arranged on each sensing bridge resistor;
3) The back of the substrate silicon is positioned in a pressure sensing membrane area, a linear top silicon interconnection line (2) is respectively manufactured along two oblique symmetrical angles of the pressure sensing membrane area, an included angle between the linear top silicon interconnection line and the sensitive bridge resistor is 45 degrees, a Z-shaped interconnection line (5) is manufactured at the end part of the linear top silicon interconnection line positioned in the pressure sensing membrane area, two ends of the Z-shaped interconnection line are respectively connected with one end of the adjacent corresponding sensitive bridge resistor, a silicon dioxide layer is manufactured on the linear top silicon interconnection line and the Z-shaped interconnection line, a bonding pad (3) is manufactured at the end part of the linear top silicon interconnection line positioned outside the pressure sensing membrane area, and the bonding pad penetrates through the silicon dioxide layer to be connected with the linear top silicon interconnection line;
4) In the pressure sensing membrane areas symmetrical on two sides of the two linear top silicon interconnection lines, a symmetrical X-shaped top silicon interconnection line (6) is respectively manufactured, two inner ends of the X-shaped top silicon interconnection line are respectively connected with the other ends of the two spaced corresponding sensitive bridge resistors, two outer ends of the X-shaped top silicon interconnection line are respectively converged outside the pressure sensing membrane areas through excessive leads (7) to form connection ends, a silicon dioxide layer (8) is manufactured on the X-shaped top silicon interconnection line and the excessive leads thereof, and the connection ends are provided with bonding pads (3) which penetrate through the silicon dioxide layer and are connected with the excessive lead connection ends;
5) The back sealing glass (50) is connected to the silicon dioxide layers (8) on the surfaces of the top silicon cofferdam (1) and all the bonding pads (3), micro concave cavities (51) are formed in the corresponding parts of the back sealing glass and the pressure sensing membrane areas, the micro concave cavities (51) form a chip pressure reference cavity, and the back sealing glass
A through hole (52) is respectively arranged at the position corresponding to each bonding pad;
B. an alloy tube holder (60) comprising,
1) The inner cavity of the alloy tube seat (60) is provided with a brittle insulating material (61) with a main body of hard glass or ceramic, and the front surface of the insulating material (61) in the alloy tube seat (60) is provided with an insulating powder sealing layer (64);
2) In the insulating material (61) and the insulating powder sealing layer (64) of the alloy tube seat, a group of composite electrodes are formed by a metal hoop tube (63) and electrode pins (62), the electrode pins are embedded and welded in the metal hoop tube, each electrode pin extends out of the insulating powder sealing layer (64) and extends into a through hole (52) in a corresponding sensitive chip to be coaxial with a metal bonding pad (3), and the electrode pins (62) are electrically connected with the bonding pad (3) after the conductive powder (53) in the through hole (52) is melted;
3) The back sealing glass (50) and the alloy tube seat (60) are connected into a whole after the insulating powder sealing layer (64) is sintered.
2. The small-sized pressure sensor based on the SOI sensitive chip according to claim 1, wherein the middle part of the Z-shaped interconnection line is connected with the inner end part of a straight-shaped top-layer silicon interconnection line through an L-shaped transition line (2 a), and a silicon dioxide layer is arranged on the L-shaped transition line (2 a).
3. The small-sized pressure sensor based on the SOI sensitive chip as claimed in claim 2, wherein the top silicon bank, the top silicon interconnect line, the sensitive bridge resistor and the L-shaped transition line are made of high-concentration doped silicon.
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