CN114121691A - Bonding structure of electronic component and manufacturing method thereof - Google Patents
Bonding structure of electronic component and manufacturing method thereof Download PDFInfo
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- CN114121691A CN114121691A CN202010899175.6A CN202010899175A CN114121691A CN 114121691 A CN114121691 A CN 114121691A CN 202010899175 A CN202010899175 A CN 202010899175A CN 114121691 A CN114121691 A CN 114121691A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/145—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/175—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8134—Bonding interfaces of the bump connector
- H01L2224/81355—Bonding interfaces of the bump connector having an external coating, e.g. protective bond-through coating
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Abstract
The invention provides a manufacturing method of a bonding structure of an electronic element, which comprises the following steps. A first electronic component is provided that includes a first conductive joint. A second electronic component is provided that includes a second conductive joint. A first organic polymer layer is formed on the first conductive bonding portion. And forming a second organic polymer layer on the second conductive joint part. The first electronic component and the second electronic component are jointed through the first conductive joint part and the second conductive joint part, so that the first electronic component and the second electronic component are electrically connected. After bonding, the first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion. A bonding structure of the electronic component is also provided.
Description
Technical Field
The present invention relates to a bonding structure and a method for manufacturing the same, and more particularly, to a bonding structure of an electronic component and a method for manufacturing the same.
Background
Generally, there are many factors that affect the quality of electronic products. For example, in a bonding structure of an electronic device, the bonding surface thereof often has an oxidation problem due to the process conditions, and the surface flatness and the material characteristics (such as the material composition and grain microstructure) of the device to be bonded also affect the bonding strength. Therefore, it is a challenge for those skilled in the art to design a bonding structure of an electronic device that can improve the bonding strength while effectively improving the problem of oxidation of the bonding surface, and thus can have better product quality.
Disclosure of Invention
The invention aims at a joint structure of an electronic element and a manufacturing method thereof, which can effectively improve the problem of joint surface oxidation and simultaneously improve the joint strength so as to have better product quality.
According to an embodiment of the present invention, a method of manufacturing a bonding structure of an electronic component includes, without limitation, the following steps. A first electronic component is provided that includes, without limitation, a first conductive joint. A second electronic component is provided that includes, without limitation, a second conductive joint. A first organic polymer layer is formed on the first conductive bonding portion. And forming a second organic polymer layer on the second conductive joint part. The first electronic component and the second electronic component are jointed through the first conductive joint part and the second conductive joint part, so that the first electronic component and the second electronic component are electrically connected. After bonding, the first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion.
In an embodiment of the invention, the first conductive bonding portion and the second conductive bonding portion are metal-to-metal bonding.
In an embodiment of the invention, the method for forming the first organic polymer layer and the second organic polymer layer is a wet process performed on the first conductive bonding portion and the second conductive bonding portion by using an organic polymer solution.
In an embodiment of the invention, the step of performing the wet process includes, but is not limited to, immersing the first conductive bonding portion and the second conductive bonding portion in an organic polymer solution or spraying the organic polymer solution on the first conductive bonding portion and the second conductive bonding portion.
In an embodiment of the invention, when the material of the first conductive bonding portion and the material of the second conductive bonding portion are copper, the organic polymer solution includes, but is not limited to, a compound having a nitrogen-containing functional group, a sulfur-containing functional group, or a combination thereof.
In an embodiment of the invention, a thickness of the organic polymer layer before bonding is at least less than 2 μm.
In an embodiment of the invention, before the bonding, the first organic polymer layer completely covers the exposed surface of the first conductive bonding portion, and the second organic polymer layer completely covers the exposed surface of the second conductive bonding portion.
In an embodiment of the invention, the amount of the first organic polymer layer and the amount of the second organic polymer layer gradually decrease when the bonding is performed.
In an embodiment of the invention, a material of the first organic polymer layer is the same as a material of the second organic polymer layer.
In an embodiment of the invention, the material of the first organic polymer layer and the material of the second organic polymer layer have no conductivity.
In an embodiment of the invention, the first electronic component and the second electronic component are bonded by a thermal compression bonding process.
In an embodiment of the invention, the first organic polymer layer is further formed on a surface of the first electronic element opposite to the first conductive bonding portion, and the second organic polymer layer is further formed on a surface of the second electronic element opposite to the second conductive bonding portion.
According to an embodiment of the present invention, a bonding structure of an electronic component includes, without limitation, a first electronic component and a second electronic component. The first electronic component includes, without limitation, a first conductive joint. The second electronic component includes, without limitation, a second conductive joint. The second conductive joint part is jointed with the first conductive joint part so as to electrically connect the first electronic component and the second electronic component. The crystal grains in the first conductive joint part and the second conductive joint part have a structure with fine crystal grain distribution.
In an embodiment of the invention, the structure of the fine grain distribution is that the grain size of a portion of the grains in the first conductive joint and the second conductive joint, which is close to the joint of the first conductive joint and the second conductive joint, is smaller than the grain size of a portion of the grains in the second conductive joint, which is far from the joint of the first conductive joint and the second conductive joint.
In an embodiment of the invention, the bonding of the first electronic component and the second electronic component includes, but is not limited to, wafer-to-wafer bonding or circuit-to-circuit-substrate bonding.
In an embodiment of the invention, the first conductive bonding portion and the second conductive bonding portion are a conductive bump and a conductive pad, respectively.
In an embodiment of the invention, the first conductive joints and the second conductive joints are multiple, and a cavity is formed between adjacent first conductive joints and between adjacent second conductive joints.
In an embodiment of the invention, the cavity does not have a primer therein.
In an embodiment of the invention, the first conductive bonding portion directly contacts the second conductive bonding portion.
In an embodiment of the invention, the bonding structure of the electronic element further includes, but is not limited to, a first organic polymer layer and a second organic polymer layer. The first organic polymer layer is located on a surface of the first electronic component opposite the first conductive joint. The second organic polymer layer is located on a surface of the second electronic component opposite the second conductive joint.
Based on the above, the organic molecular layer is formed on the conductive bonding portion of the electronic device to be bonded, so that the organic molecular layer can protect the conductive bonding portion of the electronic device during the bonding process, thereby effectively improving the problem of oxidation of the bonding surface. In addition, the bonding can cause the organic polymer layer to diffuse into the conductive bonding part to form a new compound in the conductive bonding part, so that the grain microstructure is changed, and the columnar microstructure is changed into a structure with fine grain distribution, so that the grain microstructure in the conductive bonding part is strengthened, and the bonding strength is improved. Therefore, the bonding structure of the electronic element and the manufacturing method thereof can improve the bonding strength while effectively improving the problem of the oxidation of the bonding surface, thereby having better product quality.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIGS. 1A to 1C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to an embodiment of the invention;
FIG. 1D is a schematic diagram illustrating a partial die structure of a first conductive bonding portion and a second conductive bonding portion of a bonding structure of an electronic component according to an embodiment of the invention;
FIG. 1E is a schematic diagram of a partial die structure of a first conductive bonding portion and a second conductive bonding portion of a bonding structure of an electronic component according to the prior art;
FIGS. 2A to 2C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to another embodiment of the invention;
FIGS. 3A to 3C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to yet another embodiment of the invention;
FIGS. 4A to 4C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to still another embodiment of the invention;
fig. 5A to 5C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to yet another embodiment of the invention.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
The foregoing and other technical and scientific aspects, features and utilities of the present invention will be apparent from the following detailed description of various embodiments, which is to be read in connection with the accompanying drawings. Directional terms as referred to in the following examples, for example: "upper", "lower", "front", "rear", "left", "right", etc., are simply directions with reference to the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting.
In the detailed description of the embodiments, terms such as "first," "second," etc. may be used to describe various elements. These terms are only used to distinguish one element from another, but in the structure, these elements should not be limited by these terms. For example, a first element may be termed a second element, and, similarly, a second element may be termed a first element, without departing from the scope of the present inventive concept. In addition, the order of formation of these elements or components in a manufacturing process should not be limited by these terms, except as to the particular process flow. For example, the first element may be formed before the second element. Alternatively, the first element may be formed after the second element. Alternatively, the first element and the second element may be formed in the same process or step.
Also, the thickness of layers and regions in the drawings may be exaggerated for clarity. The same or similar reference numbers refer to the same or similar elements, and the following paragraphs will not be repeated.
Fig. 1A to fig. 1C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to an embodiment of the invention. In the present embodiment, the manufacturing process of the bonding structure of electronic components 100 may include, without limitation, the following steps. Fig. 1D is a schematic diagram illustrating a partial grain structure of a first conductive bonding portion and a second conductive bonding portion of a bonding structure of an electronic component according to an embodiment of the invention. Fig. 1E is a schematic diagram of a partial grain structure of a first conductive bonding portion and a second conductive bonding portion of a bonding structure of an electronic component in the prior art.
Referring to fig. 1A, a first electronic component 110 and a second electronic component 120 are provided, wherein the first electronic component 110 may include, but is not limited to, a first substrate 112 and a first conductive joint 114, and the second electronic component 120 may include, but is not limited to, a second substrate 122 and a second conductive joint 124.
In some embodiments, the first substrate 112 is, for example, a semiconductor wafer or a circuit substrate, and the second substrate 122 is, for example, a semiconductor wafer or a circuit substrate. For example, the first substrate 112 and the second substrate 122 are both semiconductor wafers, so that the subsequent bonding of the first electronic component 110 and the second electronic component 120 may be wafer-to-wafer bonding, or the first substrate 112 and the second substrate 122 are both circuit substrates, so that the subsequent bonding of the first electronic component 110 and the second electronic component 120 may be circuit-to-circuit substrate bonding.
In some embodiments, the first conductive bonding portion 114 and the second conductive bonding portion 124 may be a conductive bump and a conductive pad, respectively. For example, as shown in fig. 1A, the first conductive bonding portion 114 and the second conductive bonding portion 124 may be conductive bumps, but the invention is not limited thereto. It should be noted that the present invention is not limited to the types of the first substrate 112, the second substrate 122, the first conductive bonding portion 114, and the second conductive bonding portion 124, and may be determined according to the actual design requirement.
With reference to fig. 1A, in order to protect the first electronic device 110 and the second electronic device 120 during the subsequent bonding process and effectively improve the problem of oxidation of the bonding surface, organic polymer layers may be formed on the portions of the first electronic device 110 and the second electronic device 120 to be bonded, respectively. For example, the first organic polymer layer 10 is formed on the first conductive bonding portion 114 of the first electronic element 110, and the second organic polymer layer 20 is formed on the second conductive bonding portion 124 of the second electronic element 120.
In the present embodiment, the first organic polymer layer 10 may completely cover the exposed surface 114a of the first conductive joint 114, and the second organic polymer layer 20 may completely cover the exposed surface 124a of the second conductive joint 124. In other words, the first organic polymer layer 10 may completely cover the top surface and the sidewall of the first conductive joint 114, and the second organic polymer layer 20 may completely cover the top surface and the sidewall of the second conductive joint 124, but the present invention is not limited thereto.
In one embodiment, the organic polymer layer may have a smaller thickness before bonding. For example, the thickness 12 of the first organic polymer layer 10 and the thickness 22 of the second organic polymer layer 20 before bonding may be at least less than 2 micrometers (μm), but the present invention is not limited thereto, and the thickness of the organic polymer layers may be adjusted according to the actual situation.
In one embodiment, the material of the first organic polymer layer 10 and the material of the second organic polymer layer 20 may not have conductivity. Further, since the organic polymer layer is a thin polymer layer, even if the material of the first organic polymer layer 10 and the material of the second organic polymer layer 20 do not have conductivity, the electrical performance after the first electronic element 110 and the second electronic element 120 are bonded is not substantially affected, but the present invention is not limited thereto.
In some embodiments, the method for forming the first organic polymer layer 10 and the second organic polymer layer 20 may be a wet process of performing a wet process on the first conductive bonding portion 114 of the first electronic component 110 and the second conductive bonding portion 124 of the second electronic component 120 by using an organic polymer solution.
For example, in one embodiment, a wet process is performed by soaking the first conductive bonding portion 114 of the first electronic component 110 and the second conductive bonding portion 124 of the second electronic component 120 in an organic polymer solution. However, the invention is not limited thereto, and in another embodiment, for example, a wet process is performed by spraying an organic polymer solution on the first conductive bonding portion 114 of the first electronic component 110 and the second conductive bonding portion 124 of the second electronic component 120.
Further, since the functional group of the organic polymer solution may be selective to metal, the wet process using the organic polymer solution may form an organic polymer layer only on the surface of the metal material on the first electronic element 110 and the second electronic element 120, and the dielectric material on the first electronic element 110 and the second electronic element 120 may not form an organic polymer layer on the surface thereof.
Therefore, in some embodiments, when the material of the first conductive bonding portion 114 of the first electronic component 110 and the second conductive bonding portion 124 of the second electronic component 120 are metal, the organic polymer solution may form the first organic polymer layer 10 and the second organic polymer layer 20 on the first conductive bonding portion 114 and the second conductive bonding portion 124, respectively. For example, the material of the first conductive joint 114 and the material of the second conductive joint 124 are, for example, copper, nickel or gold, wherein when the material of the first conductive joint 114 and the material of the second conductive joint 124 are copper, the organic polymer solution may include, but is not limited to, a compound having a nitrogen-containing functional group, a sulfur-containing functional group, or a combination thereof.
For example, the compound having a nitrogen-containing functional group is, for example, a compound having Benzotriazole (Benzotriazole) or an amine, wherein the structural formula of the compound having Benzotriazole may be represented by the following formula (1), formula (2), formula (3), formula (4), and the structural formula of the compound having an amine may be represented by the following formula (5), formula (6). The compound having a functional group having sulfur is, for example, a compound having silane (silane), wherein the structural formula of the compound having silane can be represented by the following formula (7). However, the present invention is not limited thereto, and the compound having a nitrogen-containing functional group and a sulfur-containing functional group may be any other suitable compound.
Formula (1)
Formula (2)
Formula (3)
Formula (4)
Formula (5)
Wherein n is 1 or more.
Formula (6)
Formula (7)
In an embodiment, the first electronic component 110 and the second electronic component 120 may use the same organic polymer solution to perform a wet process, so that the material of the first organic polymer layer 10 may be the same as the material of the second organic polymer layer 20, so that the subsequent first organic polymer layer 10 and the second organic polymer layer 20 may be uniformly diffused to achieve a higher product quality.
It should be noted that the concentration of the organic polymer solution is not limited in the present invention, and the concentration of the organic polymer solution can be adjusted according to the actual design requirement.
Referring to fig. 1B and fig. 1C, in the present embodiment, the first electronic device 110 and the second electronic device 120 are bonded by the first conductive bonding portion 114 and the second conductive bonding portion 124, so that the first electronic device 110 is electrically connected to the second electronic device 120, wherein after the bonding, the first organic polymer layer 10 and the second organic polymer layer 20 are diffused into the first conductive bonding portion 114 and the second conductive bonding portion 124, so that the grains in the first conductive bonding portion 114 and the second conductive bonding portion 124 have a structure with a fine grain distribution. For example, as shown in fig. 1D, the structure of the fine grain distribution may be that the grain size of the portion of the grains in the first conductive joint 114 and the second conductive joint 124 close to the joint B1 of the first conductive joint 114 and the second conductive joint 124 is smaller than the grain size of the portion of the grains in the first conductive joint 114 and the second conductive joint 124 far from the joint B1 of the first conductive joint 114 and the second conductive joint 124, so that compared to the prior art (as shown in fig. 1E), the grain size of the portion of the grains in the first conductive joint 1141 and the second conductive joint 1241 close to the joint B2 of the first conductive joint 1141 and the second conductive joint 1241 is similar to the grain size of the portion of the grains in the first conductive joint 1141 and the joint B2 of the second conductive joint 1241, the joint structure 100 of the electronic component of the present embodiment can effectively improve the problem of oxidation joint while enhancing the joint strength, thereby having better product quality.
In some embodiments, when the material of the first conductive joint 114 and the second conductive joint 124 is copper, the grain size of the portion of the grains in the first conductive joint 114 and the second conductive joint 124 close to the junction B1 of the first conductive joint 114 and the second conductive joint 124 may be 0.1 to 0.4 microns, and the grain size of the portion of the grains in the first conductive joint 114 and the second conductive joint 124 far from the junction B1 of the first conductive joint 114 and the second conductive joint 124 may be greater than 1 micron, compared to the grain size of the portion of the grains in the first conductive joint 1141 and the second conductive joint 1241 close to the junction B2 of the first conductive joint 1141 and the second conductive joint 1241 in the prior art which is 0.5 to 1 microns, and the grain size of the portion of the grains in the first conductive joint 1141 and the second conductive joint 1241 far from the junction B2 of the first conductive joint 1241 and the second conductive joint 1241 may be away from the junction B2 of the first conductive joint 1141 and the second conductive joint 1241 The dimension can be larger than 1 μm, so that the bonding structure 100 of the electronic device of the present embodiment can improve the bonding strength while effectively improving the problem of the oxidation of the bonding surface, and further has better product quality.
In some embodiments, the first conductive bonding portion 114 and the second conductive bonding portion 124 may be bonded by a low temperature process at a temperature between 200 ℃ and 250 ℃, for example, because the bonding under the low temperature process generally has relatively large and non-uniform sizes of copper grains at the bonding interface because the copper grains at the bonding interface are difficult to recrystallize due to the working temperature and pressure, and the manufacturing method of the bonding structure 100 of the electronic device of the embodiment may have a structure with fine grain distribution of the grains in the first conductive bonding portion 114 and the second conductive bonding portion 124, so that the grain size of the B1 at the bonding interface may have a better uniformity even under the low temperature process, but the invention is not limited thereto.
Further, organic molecule layers (e.g., the first organic molecule layer 10 and the second organic molecule layer 20) are formed on conductive joints (e.g., the first conductive joint 114 and the second conductive joint 124) of electronic components (e.g., the first electronic component 110 and the second electronic component 120) to be bonded, so that the conductive joints (e.g., the first conductive joint 114 and the second conductive joint 124) of the electronic components (e.g., the first electronic component 110 and the second electronic component 120) can be protected by the organic molecule layers (e.g., the first organic molecule layer 10 and the second organic molecule layer 20) during bonding, so as to effectively improve the problem of bonding surface oxidation. In addition, the bonding may cause the organic polymer layers (e.g., the first organic polymer layer 10 and the second organic polymer layer 20) to diffuse into the conductive joints (e.g., the first conductive joint 114 and the second conductive joint 124) to form new compounds in the conductive joints (e.g., the first conductive joint 114 and the second conductive joint 124) so as to change the grain microstructure, and the columnar microstructure is transformed into a structure with finer grain distribution, so as to strengthen the grain microstructure in the conductive joints (e.g., the first conductive joint 114 and the second conductive joint 124) and improve the bonding strength. Therefore, the bonding structure of the electronic component and the manufacturing method thereof of the embodiment can improve the bonding strength while effectively improving the problem of the oxidation of the bonding surface, and further can have better product quality.
In one embodiment, since the first organic polymer layer 10 and the second organic polymer layer 20 diffuse into the first conductive joint 114 and the second conductive joint 124, the amount of the first organic polymer layer 10 and the amount of the second organic polymer layer 20 gradually decrease when bonding is performed, in other words, the thickness 12 of the first organic polymer layer 10 and the thickness 22 of the second organic polymer layer 20 gradually decrease.
In this embodiment, as shown in fig. 1C, the first organic polymer layer 10 and the second organic polymer layer 20 located at the joint surface of the first electronic component 110 and the second electronic component 120 may be completely diffused into the first conductive joint 114 and the second conductive joint 124, so that the first conductive joint 114 and the second conductive joint 124 may be in direct contact after the joint.
On the other hand, the first organic polymer layer 10 and the second organic polymer layer 20 on the sidewalls of the first electronic element 110 and the second electronic element 120 may partially diffuse into the first conductive joint 114 and the second conductive joint 124, and the first organic polymer layer 10 and the second organic polymer layer 20 may form continuous sidewalls, in other words, there is no interface between the first organic polymer layer 10 and the second organic polymer layer 20. However, the present invention is not limited thereto, and in other embodiments that are not shown, the first organic polymer layer 10 and the second organic polymer layer 20 on the sidewalls of the first electronic component 110 and the second electronic component 120 may also be completely diffused into the first conductive joint 114 and the second conductive joint 124, so that no organic polymer layer may remain on the bonding structure 100 of the electronic component. Note that, for the sake of clarity of illustration, the sidewall thickness variation of the first organic polymer layer 10 and the second organic polymer layer 20 is not shown in fig. 1B to 1C.
In an embodiment, the first electronic component 110 and the second electronic component 120 may be bonded by a thermal compression process, so that the temperature and pressure provided in the process may further promote the first organic polymer layer 10 and the second organic polymer layer 20 to diffuse into the first conductive bonding portion 114 and the second conductive bonding portion 124, so as to form a new compound in the conductive bonding portion, so as to change the grain microstructure, thereby further ensuring that the bonding strength may be effectively improved. However, the invention is not limited thereto, and in other embodiments, the first electronic component 110 and the second electronic component 120 may be bonded by other suitable processes.
In an embodiment, when the material of the first conductive bonding portion 114 and the second conductive bonding portion 124 are metal, the first conductive bonding portion 114 and the second conductive bonding portion 124 may be metal-to-metal bonding, but the invention is not limited thereto.
In the present embodiment, the first conductive joint portion 114 and the second conductive joint portion 124 may be multiple, and a cavity C may be formed between adjacent first conductive joint portions 114 and between adjacent second conductive joint portions 124, as shown in fig. 1C. Further, since the first conductive bonding portion 114 and the second conductive bonding portion 124 are effectively protected by the aforementioned manufacturing method, the cavity C may not have an underfill (underfill) therein for further cost saving, but the invention is not limited thereto.
Fig. 2A to 2C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to another embodiment of the invention. Fig. 3A to 3C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to another embodiment of the invention.
Referring to fig. 2A to 2C and fig. 3A to 3C, similar to fig. 1A to 1C, the bonding structure 200 of the electronic component in fig. 2A to 2C and the bonding structure 300 of the electronic component in fig. 3A to 3C are examples of bonding a circuit substrate to a circuit substrate.
Further, the first substrate 212 of the first electronic component 210 in the embodiment of fig. 2A to 2C may be an ic (integrated circuit) carrier, and the second substrate 222 of the second electronic component 220 may be a fine-line (fine-line) substrate, wherein the fine-line substrate is defined as a Chip Scale Package (CSP) containing a line design of 15um or less, a Ball Grid Array (BGA), a square glass carrier, and a wafer substrate, but the invention is not limited thereto. In addition, the first conductive bonding portions 214 of the first electronic component 210 in the embodiment of fig. 2A to 2C are conductive pads, and the second conductive bonding portions 224 of the second electronic component 220 are conductive bumps.
On the other hand, the first substrate 312 of the first electronic component 310 and the second substrate 322 of the second electronic component 320 in the embodiments of fig. 3A to 3C may be double-sided circuit substrates. In addition, the first conductive bonding portion 314 of the first electronic component 310 of the embodiment shown in fig. 3A to 3C is a conductive bump, and the second conductive bonding portion 324 of the second electronic component 320 is a conductive bump.
Fig. 4A to 4C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to still another embodiment of the invention. Similar to fig. 3A to 3C, the difference is that the first organic polymer layer 10 of the bonding structure 300a of the electronic component shown in fig. 4A to 4C may be further formed on the surface 310a of the first electronic element 310 opposite to the first conductive bonding portion 314, and the second organic polymer layer 20 may be further formed on the surface 320a of the second electronic element 320 opposite to the second conductive bonding portion 324, so that the first organic polymer layer 10 and the second organic polymer layer 20 may respectively protect the conductive member on the surface 310a of the first electronic element 310 opposite to the first conductive bonding portion 314 and the conductive member on the surface 320a of the second electronic element 320 opposite to the second conductive bonding portion 324, and reduce the probability of oxidation thereof. In this embodiment, the first organic polymer layer 10 may be formed only on the first conductive connection 316 on the surface 310a of the first conductive joint 314, and the second organic polymer layer 20 may be formed only on the second conductive connection 326 on the surface 320a of the second conductive joint 324, but the invention is not limited thereto, and in other embodiments, the coverage of the first organic polymer layer 10 and the second organic polymer layer 20 may be adjusted.
Fig. 5A to 5C are schematic partial cross-sectional views illustrating a method for manufacturing a bonding structure of an electronic device according to yet another embodiment of the invention. Similar to fig. 4A to 4C, the difference is that the first organic polymer layer 10 of the bonding structure 300b of the electronic component of fig. 5A to 5C may completely cover the surface 310a of the first electronic element 310 opposite to the first conductive bonding portion 314, and the second organic polymer layer 20 may completely cover the surface 320a of the second electronic element 320 opposite to the second conductive bonding portion 324. In this embodiment, the first organic polymer layer 10 may be coated on the first substrate 312 of the first electronic component 310, and the second organic polymer layer 20 may be coated on the second substrate 322 of the second electronic component 320.
It should be noted that the present invention is not limited to the kind of the circuit substrate in the above embodiments, and it is within the scope of the present invention as long as the circuit substrate can have the conductive bonding portion thereon for bonding with each other.
In summary, the organic molecule layer is formed on the conductive bonding portion of the electronic device to be bonded, so that the organic molecule layer can protect the conductive bonding portion of the electronic device during the bonding process, thereby effectively improving the problem of oxidation of the bonding surface. In addition, the bonding can cause the organic polymer layer to diffuse into the conductive bonding part to form a new compound in the conductive bonding part, so that the grain microstructure is changed, and the columnar microstructure is changed into a structure with finer grains, so that the grain microstructure in the conductive bonding part is strengthened and the bonding strength is improved. Therefore, the bonding structure of the electronic element and the manufacturing method thereof can improve the bonding strength while effectively improving the problem of the oxidation of the bonding surface, thereby having better product quality.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (20)
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