CN114115419B - Band gap reference source circuit - Google Patents
Band gap reference source circuit Download PDFInfo
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- CN114115419B CN114115419B CN202111408130.5A CN202111408130A CN114115419B CN 114115419 B CN114115419 B CN 114115419B CN 202111408130 A CN202111408130 A CN 202111408130A CN 114115419 B CN114115419 B CN 114115419B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a band gap reference source circuit, which comprises an output circuit, an operational amplifier circuit and a current mirror circuit, wherein the output circuit is connected with the operational amplifier circuit; the operational amplifier circuit receives an external control signal and provides bias voltage for the output circuit, and a tail current end of the operational amplifier circuit outputs tail current; the current mirror circuit is connected with the tail current output end of the operational amplifier circuit, and the tail current output end outputs the tail current of the operational amplifier circuit; the output circuit comprises a bias end and an output end, wherein the bias end receives bias voltage provided by the operational amplifier circuit, and the bias voltage controls the output of the output circuit; the output end outputs a reference voltage; the current mirror also comprises a regulating circuit, wherein the regulating circuit is controlled by the reference voltage of the output circuit and is used for regulating the base current of the current mirror so as to control the magnitude of the tail current.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit design, in particular to a band gap reference source circuit.
Background
The reference source circuit is a circuit for generating a reference voltage and a reference current along with a start signal of the power supply start circuit, and can provide stable reference voltage and reference current for other modules, so that the reference source circuit is widely applied to integrated circuits.
In some reference source circuits at present, the bias voltage is pulled down during starting, so that the instant current of the output circuit is larger, the output voltage has the overshoot phenomenon, the fall-back is slower, the whole circuit reaction time is longer, and the output voltage needs longer time to reach a stable state after the circuit is started.
Disclosure of Invention
The technical problem to be solved by the invention is to provide the band-gap reference source circuit which has higher starting speed and does not influence power consumption.
In order to solve the problems, the band gap reference source circuit comprises an output circuit, an operational amplifier circuit and a current mirror circuit;
the operational amplifier circuit receives an external control signal and provides bias voltage for the output circuit, and a tail current end of the operational amplifier circuit outputs tail current;
the current mirror circuit is connected with a tail current end of the operational amplifier circuit, and the tail current end outputs tail current of the operational amplifier circuit;
the output circuit comprises a bias end and an output end, wherein the bias end receives bias voltage provided by the operational amplifier circuit, and the bias voltage controls the output of the output circuit; the output end outputs a reference voltage;
the voltage regulator is controlled by the reference voltage of the output circuit, and the grid voltage of the current mirror is regulated to control the tail current.
The output circuit comprises a first MOS tube, a second MOS tube, a third MOS tube, a tenth MOS tube and an eleventh MOS tube;
the grid electrodes of the first MOS tube, the second MOS tube and the third MOS tube are connected together and connected with the drain electrode of the tenth MOS tube to form a bias end; the grid electrode of the tenth MOS tube is connected to a power supply through a fourth resistor; the source electrode of the tenth MOS tube is grounded;
the grid electrode of the eleventh MOS tube is connected with the output reference voltage, the drain electrode of the eleventh MOS tube is connected with the fourth resistor, and the source electrode of the eleventh MOS tube is grounded;
the bases of the first transistor and the second transistor are connected together and grounded, the collectors of the first transistor and the second transistor are grounded, the emitter of the first transistor is connected with the drain electrode of the first MOS transistor, and the emitter of the second transistor is connected with the drain electrode of the second MOS transistor through a zero resistor;
the second resistor is connected between the drain electrode of the second MOS tube and the ground;
the drain electrode of the third MOS tube outputs the reference voltage;
the third resistor is connected between the drain electrode of the third MOS tube and the ground.
The operational amplifier circuit comprises a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube; the grid electrode of the fourth MOS tube is in short circuit with the grid electrode of the fifth MOS tube and is connected with the drain electrode of the fourth MOS tube; the sources of the fourth MOS tube and the fifth MOS tube are connected with a power supply;
the grid electrodes of the sixth MOS tube and the seventh MOS tube are respectively connected with external control signals; the drain electrode of the sixth MOS tube is connected with the drain electrode of the fourth MOS tube, and the drain electrode of the seventh MOS tube is connected with the drain electrode of the fifth MOS tube; the source electrodes of the sixth MOS tube and the seventh MOS tube are short-circuited together and then output tail current;
and the drain end of the fifth MOS tube outputs bias voltage to the output circuit.
The current mirror circuit comprises an eighth MOS tube, a ninth MOS tube and a current source, wherein the drain electrode of the eighth MOS tube is connected with the tail current end of the operational amplifier circuit; the drain electrode of the ninth MOS tube is connected with a current source, and the source electrode is grounded;
the grid electrode of the eighth MOS tube is connected with the grid electrode of the ninth MOS tube in short circuit and then connected with the regulating tube, namely the source electrode of the twelfth MOS tube, and the drain electrode of the twelfth MOS tube is connected with a power supply;
the twelfth MOS tube grid is connected with the output end of the output circuit and is controlled by the reference voltage output by the output circuit.
The voltage regulator is further improved in that the regulator tube regulates the tail current of the operational amplifier circuit according to the control of the reference voltage output by the output circuit, so that the operational amplifier bandwidth and the slew rate of the bias voltage output by the operational amplifier circuit are regulated.
The further improvement is that the larger the operational amplifier bandwidth and slew rate of the bias voltage output by the operational amplifier circuit, the faster the output circuit has the starting speed.
In the current mirror circuit, the width-to-length ratio of the eighth MOS tube is larger than that of the ninth MOS tube, and when the regulating tube regulates and controls the current mirror, the eighth MOS tube copies the current flowing through the ninth MOS tube in proportion, so that the tail current of the operational amplifier circuit is regulated.
The voltage value of the reference voltage is far smaller than the starting voltage of the regulating circuit during normal output, so that the regulating circuit is prevented from being started by mistake during normal operation.
According to the band-gap reference source circuit, the current mirror circuit is regulated through the regulating tube controlled by the output reference voltage, the tail current of the operational amplifier circuit is regulated during starting, overshoot is restrained, and the falling speed of the output reference voltage is improved; after the starting is completed, the regulating tube is closed, and no extra power consumption is added.
Drawings
Fig. 1 is a schematic structural diagram of a bandgap reference source of the present invention.
Fig. 2 is a circuit configuration diagram of the bandgap reference source of the present invention.
FIG. 3 is a graph of the present invention versus prior art structure output voltage start-up stabilization.
Description of the embodiments
The following description of the embodiments of the present invention will be given with reference to the accompanying drawings, in which the technical solutions of the present invention are clearly and completely described, but the present invention is not limited to the following embodiments. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. Advantages and features of the invention will become more apparent from the following description and from the claims. It is noted that the drawings are in a very simplified form and use non-precise ratios for convenience and clarity in assisting in illustrating embodiments of the invention. All other embodiments obtained by those skilled in the art without making any inventive effort are within the scope of the present invention.
It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for the same elements throughout. It will be understood that when an element or layer is referred to as being "on" …, "" adjacent to "…," "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected to or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" …, "" directly adjacent to "…," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
The invention is further described with reference to the following detailed drawings in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the implementation of the invention easy to understand.
The band gap reference source circuit comprises an output circuit, an operational amplifier circuit and a current mirror circuit, wherein a specific embodiment of the band gap reference source circuit is shown in fig. 2, and the connection relation of the band gap reference source circuit is as follows. The first to twelfth MOS devices described below correspond to M1 to M12 in FIG. 2, respectively, and the first to fourth resistors correspond to R1 to R4 in FIG. 2, respectively, and the zero-number resistor is R0, the first transistor Q1, and the second transistor Q2, respectively.
The output circuit comprises a first MOS tube, a second MOS tube, a third MOS tube, a tenth MOS tube and an eleventh MOS tube.
The grid electrodes of the first MOS tube, the second MOS tube and the third MOS tube are connected together and connected with the drain electrode of the tenth MOS tube to form a bias end; the grid electrode of the tenth MOS tube is connected to a power supply through a fourth resistor; and the source electrode of the tenth MOS tube is grounded.
The grid electrode of the eleventh MOS tube is connected with the output reference voltage, the drain electrode of the eleventh MOS tube is connected with the fourth resistor, and the source electrode of the eleventh MOS tube is grounded.
The bases of the first transistor and the second transistor are connected together and grounded, the collectors of the first transistor and the second transistor are grounded, the emitter of the first transistor is connected with the drain of the first MOS transistor, and the emitter of the second transistor is connected with the drain of the second MOS transistor through a zero resistor.
The second resistor is connected between the drain electrode of the second MOS tube and the ground.
And the drain electrode of the third MOS tube outputs the reference voltage.
The third resistor is connected between the drain electrode of the third MOS tube and the ground.
The operational amplifier circuit comprises a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube; the grid electrode of the fourth MOS tube is in short circuit with the grid electrode of the fifth MOS tube and is connected with the drain electrode of the fourth MOS tube; and the sources of the fourth MOS tube and the fifth MOS tube are connected with a power supply.
The grid electrodes of the sixth MOS tube and the seventh MOS tube are respectively connected with external control signals; the drain electrode of the sixth MOS tube is connected with the drain electrode of the fourth MOS tube, and the drain electrode of the seventh MOS tube is connected with the drain electrode of the fifth MOS tube; and outputting tail current after the source electrodes of the sixth MOS tube and the seventh MOS tube are in short circuit, namely, current flowing through the eighth MOS tube.
And the drain end of the fifth MOS tube outputs bias voltage PB to the output circuit.
The current mirror circuit comprises an eighth MOS tube, a ninth MOS tube and a current source, wherein the drain electrode of the eighth MOS tube is connected with the tail current end of the operational amplifier circuit; and the drain electrode of the ninth MOS tube is connected with a current source, and the source electrode is grounded.
And the grid electrode of the eighth MOS tube is connected with the grid electrode of the ninth MOS tube in a short circuit mode and then connected with the regulating tube, namely the source electrode of the twelfth MOS tube, and the drain electrode of the twelfth MOS tube is connected with a power supply. In the current mirror circuit, the width-to-length ratio of the eighth MOS tube is larger than that of the ninth MOS tube, and when the regulating tube regulates and controls the current mirror, the eighth MOS tube copies the current flowing through the ninth MOS tube in proportion, so that the tail current of the operational amplifier circuit is regulated.
The twelfth MOS tube grid is connected with the output end of the output circuit and is controlled by the reference voltage output by the output circuit.
In the operational amplifier circuit, a gate end of the sixth MOS tube receives a control signal B, the control signal is a node voltage of a drain end of the second MOS tube M2, a gate end of the seventh MOS tube receives a control signal A, and the control signal is a drain end node voltage of the first MOS tube.
In fig. 2, the Vbe difference between the two transistors Q1, Q2 is dbbe= (vbeq1+vbeq2);
the current through Q2 is IQ2 = dbbe/R0;
the current flowing through R2 is ir2=vbe/R2;
I3=I2=IQ2+IR2；
dVbe is a positive temperature coefficient; vbe is a negative temperature coefficient. And setting a proper ratio of R2 to R0 to obtain the current with zero temperature coefficient.
Vout=I3*R3；
And obtaining the voltage with zero temperature coefficient.
When the circuit is started, M10 is opened, bias voltage PB is pulled down, the instantaneous current flowing through M3 is large, and the OUT terminal has overshoot. At this time, the gate of the regulator M12 is controlled by the voltage signal of the output terminal OUT, the source terminal is connected to the voltage VB1 of the current mirror gate terminal node, and the drain terminal is connected to the power supply VDD.
When the output voltage Vout of the output end OUT is overshot and exceeds VB1+VGS12 (VGS12 refers to the gate source voltage of M12) during circuit starting, M12 is opened, VB1 is raised, the operational current is large, and the Vout falling speed can be improved.
When Vout returns to normal, the M12 tube is disconnected with no additional power consumption. It should be noted that the voltage output by the OUT terminal is set here, and its normal output value is far smaller than vb1+vgs12, so as to ensure that the M12 tube will not be turned on by mistake when the circuit is operating normally.
The regulating tube M12 regulates the tail current of the operational amplifier circuit according to the control of the reference voltage output by the output circuit, thereby regulating the operational amplifier bandwidth and the slew rate of the bias voltage output by the operational amplifier circuit. The greater the tail current is, the greater the operational amplifier bandwidth and slew rate of the bias voltage output by the operational amplifier circuit are, and the faster the output circuit has a starting speed.
According to the band-gap reference source circuit, the current mirror circuit is regulated through the regulating tube controlled by the output reference voltage, the tail current of the operational amplifier circuit is regulated during starting, overshoot is restrained, and the falling speed of the output reference voltage is improved; after the starting is completed, the regulating tube is closed, and no extra power consumption is added.
Fig. 3 is a graph showing a comparison of output voltage curves, and it can be seen from the graph that the overshoot of the output voltage of the conventional circuit is close to 3V, and the time taken for the output voltage to fall back to the steady state to 5% of the final value is 2.1us, while the overshoot of the output voltage of the circuit of the present invention is only about 2.2V, and the time taken for the output voltage to fall back to the steady state is shorter, which is 1.7us, because of the lower overshoot.
The above are only preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A band gap reference source circuit is characterized in that: the band gap reference source circuit comprises an output circuit, an operational amplifier circuit and a current mirror circuit;
the operational amplifier circuit receives an external control signal and provides bias voltage for the output circuit, and a tail current end of the operational amplifier circuit outputs tail current;
the current mirror circuit is connected with the tail current end of the operational amplifier circuit;
the output circuit comprises a bias end and an output end, wherein the bias end receives bias voltage provided by the operational amplifier circuit, and the bias voltage controls the output of the output circuit; the output end outputs a reference voltage;
the adjusting circuit is controlled by the reference voltage of the output circuit and adjusts the grid voltage of the current mirror so as to control the tail current;
the output circuit comprises a first MOS tube, a second MOS tube, a third MOS tube, a tenth MOS tube and an eleventh MOS tube;
the grid electrodes of the first MOS tube, the second MOS tube and the third MOS tube are connected together and connected with the drain electrode of the tenth MOS tube to form a bias end; the grid electrode of the tenth MOS tube is connected to a power supply through a fourth resistor; the source electrode of the tenth MOS tube is grounded;
the grid electrode of the eleventh MOS tube is connected with the output reference voltage, the drain electrode of the eleventh MOS tube is connected with the fourth resistor, and the source electrode of the eleventh MOS tube is grounded;
the bases of the first transistor and the second transistor are connected together and grounded, the collectors of the first transistor and the second transistor are grounded, the emitter of the first transistor is connected with the drain electrode of the first MOS transistor, and the emitter of the second transistor is connected with the drain electrode of the second MOS transistor through a zero resistor;
the second resistor is connected between the drain electrode of the second MOS tube and the ground;
the drain electrode of the third MOS tube outputs the reference voltage;
the third resistor is connected between the drain electrode of the third MOS tube and the ground.
2. The bandgap reference source circuit of claim 1, wherein: the regulating circuit is a MOS tube.
3. The bandgap reference source circuit of claim 1, wherein: the operational amplifier circuit comprises a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube; the grid electrode of the fourth MOS tube is in short circuit with the grid electrode of the fifth MOS tube and is connected with the drain electrode of the fourth MOS tube; the sources of the fourth MOS tube and the fifth MOS tube are connected with a power supply;
the grid electrodes of the sixth MOS tube and the seventh MOS tube are respectively connected with external control signals; the drain electrode of the sixth MOS tube is connected with the drain electrode of the fourth MOS tube, and the drain electrode of the seventh MOS tube is connected with the drain electrode of the fifth MOS tube; the source electrodes of the sixth MOS tube and the seventh MOS tube are short-circuited together and then output tail current;
and the drain end of the fifth MOS tube outputs bias voltage to the output circuit.
4. The bandgap reference source circuit of claim 1, wherein: the current mirror circuit comprises an eighth MOS tube, a ninth MOS tube and a current source, wherein the drain electrode of the eighth MOS tube is connected with the tail current end of the operational amplifier circuit; the drain electrode of the ninth MOS tube is connected with a current source, and the source electrode is grounded;
the grid electrode of the eighth MOS tube is connected with the grid electrode of the ninth MOS tube in a short circuit mode and then connected to the regulating circuit, namely the source electrode of the twelfth MOS tube serving as the regulating circuit, and the drain electrode of the twelfth MOS tube is connected with a power supply;
the twelfth MOS tube grid is connected with the output end of the output circuit and is controlled by the reference voltage output by the output circuit.
5. The bandgap reference source circuit of claim 1, wherein: the adjusting circuit adjusts the tail current of the operational amplifier circuit according to the control of the reference voltage output by the output circuit, so as to adjust the operational amplifier bandwidth and the slew rate of the bias voltage output by the operational amplifier circuit.
6. The bandgap reference circuit of claim 5, wherein: in the current mirror circuit, the width-to-length ratio of the eighth MOS tube is larger than that of the ninth MOS tube, and when the regulating tube regulates and controls the current mirror, the eighth MOS tube copies the current flowing through the ninth MOS tube in proportion, so that the tail current of the operational amplifier circuit is regulated.
7. The bandgap reference circuit of claim 5, wherein: the voltage value of the reference voltage is far smaller than the starting voltage of the regulating circuit during normal output, so that the regulating circuit is prevented from being started by mistake during normal operation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111408130.5A CN114115419B (en) | 2021-11-25 | 2021-11-25 | Band gap reference source circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111408130.5A CN114115419B (en) | 2021-11-25 | 2021-11-25 | Band gap reference source circuit |
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| CN114115419A CN114115419A (en) | 2022-03-01 |
| CN114115419B true CN114115419B (en) | 2023-07-04 |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541872B2 (en) * | 2007-07-09 | 2009-06-02 | Texas Instruments Incorporated | Startup circuit for subregulated amplifier |
| CN102289243B (en) * | 2011-06-30 | 2013-06-12 | 西安电子科技大学 | Complementary metal oxide semiconductor (CMOS) band gap reference source |
| CN104079246B (en) * | 2014-05-23 | 2017-01-18 | 浙江大学 | Low power consumption high slew rate high gain bandwidth product fully differential operational amplifier |
| CN105607684A (en) * | 2016-02-26 | 2016-05-25 | 上海华力微电子有限公司 | Automatic biasing band-gap reference source circuit |
| CN108073218B (en) * | 2016-11-08 | 2019-12-03 | 中芯国际集成电路制造(上海)有限公司 | Operation amplifier circuit and band gap reference |
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