CN114114852B - Through hole layer broken line hot spot assessment method in OPC correction - Google Patents
Through hole layer broken line hot spot assessment method in OPC correction Download PDFInfo
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- CN114114852B CN114114852B CN202111439153.2A CN202111439153A CN114114852B CN 114114852 B CN114114852 B CN 114114852B CN 202111439153 A CN202111439153 A CN 202111439153A CN 114114852 B CN114114852 B CN 114114852B
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- hot spot
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- hole layer
- broken line
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
The invention discloses a method for classifying patterns of a through hole layer, which adopts different preset rules to identify broken line hot spots for different types of patterns. Compared with the prior art, the method and the device have the advantages that through classifying the through hole layer patterns and setting different preset rules to identify broken line hot spots, the risk of missing identification is reduced, and the repairing efficiency and pertinence are improved.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a through hole layer broken line hot spot assessment method in OPC correction.
Background
As integrated circuits enter sub-wavelength technology nodes, design rules are more and more complex, resolution enhancement technologies meet more and more challenges, photolithography process hot spot patterns are more and more complex, and improvement of yield rate brings higher and higher requirements to each process module. For Optical Proximity Correction (OPC) engineers, maximizing the Process Window (PW) and accurately predicting and preventing hotspot patterns is an important value. Among them, disconnection (pin) and bridging (bridge) are the most common hot spot problems. The broken line inspection methods of different types of hole layers are different, and the mode of high light directly influences the mode of subsequent correction. The disconnection inspection of the via layer (via) is an important item in hot spot inspection. For some graphics, such as rectangles, the grabbing maximum value has the risk of missing grabbing, the grabbing minimum value has the possibility of false alarm, and filtering of the result has trouble.
Disclosure of Invention
In order to improve the accuracy of broken line hot spot evaluation, the invention provides a through hole layer broken line hot spot evaluation method in OPC correction, which classifies through hole layer patterns and adopts different preset rules to identify broken line hot spots for different types of patterns.
Preferably, the via layer pattern is divided into three types; if the aspect ratio of the through hole layer pattern is larger than 4, defining the through hole layer pattern as a first type pattern; if the aspect ratio of the through hole layer pattern is smaller than 2, the through hole layer pattern is defined as a second type pattern; and if the aspect ratio of the through hole layer pattern is 2 to 4, defining the through hole layer pattern as a third type pattern.
Preferably, for the first type of graph, a first preset rule is adopted to capture a broken line hot spot; capturing broken line hot spots by adopting a second preset rule for the second type of graph; and for the third type of graph, a third preset rule is adopted to grasp the broken line hot spot.
Preferably, the first preset rule is a minimum value of grabbing a first type of graph, and the broken line hot spot is identified according to the minimum value.
Preferably, the second preset rule is a maximum value of grabbing a second type of graph, and identifying the broken line hot spot according to the maximum value.
Preferably, the third preset rule is to cut off two ends of the third type of graph, grasp a minimum value of a middle section of the third type of graph, and identify a disconnection hot spot according to the minimum value.
Preferably, the second preset rule is to grasp a first maximum value of the second type of graph in the horizontal direction and a second maximum value of the second type of graph in the vertical direction respectively, and identify the disconnection hot spot according to the first maximum value and/or the second maximum value.
Preferably, for the second type of pattern, the mask is respectively corrected and moved according to the first maximum value in the horizontal direction and the second maximum value in the vertical direction.
Compared with the prior art, the method and the device have the advantages that through classifying the through hole layer patterns and setting different preset rules to identify broken line hot spots, the risk of missing identification is reduced, and the repairing efficiency and pertinence are improved.
Drawings
FIG. 1 is a schematic diagram of a first type of pattern recognition broken line hot spot in embodiment 1;
FIG. 2 is a schematic diagram of a second type of pattern recognition broken line hot spot in embodiment 1;
FIG. 3 is a schematic diagram of a third type of pattern recognition broken line hot spot in embodiment 1;
fig. 4 is a schematic diagram of a second type of pattern recognition broken line hot spot in embodiment 2.
Example 1
The via layer patterns shown in fig. 1 to 3 are of various types, the line patterns shown in fig. 1, the square hole layers shown in fig. 2, and the rectangular hole layers shown in fig. 3.
According to the through hole layer broken line hot spot assessment method in OPC correction, through hole layer patterns are classified, and different preset rules are adopted for different types of patterns to identify broken line hot spots.
Dividing the through hole layer pattern into three types;
if the aspect ratio of the through hole layer pattern is larger than 4, defining the through hole layer pattern as a first type pattern; the first type of pattern is a line pattern, simply referred to as a 1D pattern, as shown in fig. 1.
If the aspect ratio of the through hole layer pattern is smaller than 2, the through hole layer pattern is defined as a second type pattern; the second type of pattern is a square hole layer, simply referred to as a 2D pattern, as shown in fig. 2.
If the aspect ratio of the through hole layer pattern is 2 to 4, the through hole layer pattern is defined as a third type pattern; the third type of pattern is a rectangular hole layer, simply referred to as a 1.5D pattern, as shown in fig. 3.
Capturing broken line hot spots by adopting a first preset rule for the first type of graph; for example, the first preset rule is a minimum value of grabbing a first type of graph, and the broken line hot spot is identified according to the minimum value.
Capturing broken line hot spots by adopting a second preset rule for the second type of graph; for example, the second preset rule is to capture the maximum value of the second type of graph, and identify the disconnection hot spot according to the maximum value.
As shown in fig. 3, for the third type of graph, a third preset rule is adopted to capture a broken line hot spot; for example, the third preset rule is to cut off two ends of the third type of graph, grasp a minimum value of a middle section of the third type of graph, and identify a broken line hot spot according to the minimum value.
Compared with the prior art, the method and the device have the advantages that through classifying the through hole layer patterns and setting different preset rules to identify broken line hot spots, the risk of missing identification is reduced, and the repairing efficiency and pertinence are improved.
Example 2
As shown in fig. 4, this embodiment differs from embodiment 1 in that:
the second preset rule is to respectively grasp a first maximum value of the second type graph in the horizontal direction and a second maximum value of the second type graph in the vertical direction, and identify a broken line hot spot according to the first maximum value and/or the second maximum value.
And for the second type of graph, the mask can be corrected and moved respectively according to the first maximum value in the horizontal direction and the second maximum value in the vertical direction.
Claims (7)
1. A through hole layer broken line hot spot evaluation method in OPC correction is characterized in that:
classifying the patterns of the through hole layer, and identifying broken line hot spots by adopting different preset rules for different types of patterns;
dividing the through hole layer pattern into three types;
if the aspect ratio of the through hole layer pattern is larger than 4, defining the through hole layer pattern as a first type pattern;
if the aspect ratio of the through hole layer pattern is smaller than 2, the through hole layer pattern is defined as a second type pattern;
and if the aspect ratio of the through hole layer pattern is 2 to 4, defining the through hole layer pattern as a third type pattern.
2. The method for evaluating a via layer break hot spot in OPC correction of claim 1, wherein:
capturing broken line hot spots by adopting a first preset rule for the first type of graph;
capturing broken line hot spots by adopting a second preset rule for the second type of graph;
and for the third type of graph, a third preset rule is adopted to grasp the broken line hot spot.
3. The method for evaluating the broken hot spot of the through hole layer in the OPC correction as claimed in claim 2, wherein:
the first preset rule is to grasp the minimum value of the first type of graph, and identify the disconnection hot spot according to the minimum value.
4. The method for evaluating the broken hot spot of the through hole layer in the OPC correction as claimed in claim 2, wherein:
and the second preset rule is to grasp the maximum value of the second type graph, and identify the disconnection hot spot according to the maximum value.
5. The method for evaluating the broken hot spot of the through hole layer in the OPC correction as claimed in claim 2, wherein:
and the third preset rule is to cut off two ends of the third type graph, grasp the minimum value of the middle section of the third type graph, and identify the broken line hot spot according to the minimum value.
6. The method for evaluating the broken hot spot of the through hole layer in the OPC correction as claimed in claim 2, wherein:
the second preset rule is to respectively grasp a first maximum value of the second type graph in the horizontal direction and a second maximum value of the second type graph in the vertical direction, and identify a broken line hot spot according to the first maximum value and/or the second maximum value.
7. The method for evaluating via layer break hot spot in OPC correction of claim 6 wherein:
and respectively correcting and moving the mask according to the first maximum value in the horizontal direction and the second maximum value in the vertical direction for the second type of graph.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111439153.2A CN114114852B (en) | 2021-11-30 | 2021-11-30 | Through hole layer broken line hot spot assessment method in OPC correction |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111439153.2A CN114114852B (en) | 2021-11-30 | 2021-11-30 | Through hole layer broken line hot spot assessment method in OPC correction |
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| Publication Number | Publication Date |
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| CN114114852A CN114114852A (en) | 2022-03-01 |
| CN114114852B true CN114114852B (en) | 2024-01-23 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7698676B1 (en) * | 2005-11-10 | 2010-04-13 | Qi-De Qian | Method and system for improving manufacturability of integrated devices |
| CN108009316A (en) * | 2017-11-09 | 2018-05-08 | 上海华力微电子有限公司 | OPC modification methods |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6760901B2 (en) * | 2002-04-11 | 2004-07-06 | International Business Machines Corporation | Trough adjusted optical proximity correction for vias |
| JP4744980B2 (en) * | 2005-08-25 | 2011-08-10 | 株式会社東芝 | Pattern verification method, program thereof, and method of manufacturing semiconductor device |
| US9189589B2 (en) * | 2013-12-18 | 2015-11-17 | Globalfoundries Inc. | Pattern-based via redundancy insertion |
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- 2021-11-30 CN CN202111439153.2A patent/CN114114852B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7698676B1 (en) * | 2005-11-10 | 2010-04-13 | Qi-De Qian | Method and system for improving manufacturability of integrated devices |
| CN108009316A (en) * | 2017-11-09 | 2018-05-08 | 上海华力微电子有限公司 | OPC modification methods |
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