CN114113244B - Biochemical sensor for double-channel detection - Google Patents
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Abstract
The invention relates to a quantum capacitor based on two-dimensional materials analytical biochemical sensor for conductivity double-channel detection: comprising a substrate and a solution; a two-dimensional material layer is arranged on the substrate; source and drain electrodes are arranged at two ends of the two-dimensional material layer to form a two-dimensional material in-plane conductivity detection sensing channel; the liquid gate electrode is arranged in the solution, and forms an out-of-plane quantum capacitance detection sensing channel with the two-dimensional material layer. The sensor provided by the invention couples the excellent conductivity of the two-dimensional material with the quantum capacitance characteristic of the two-dimensional material, so that a biochemical detection device capable of decoupling the conductivity of the two-dimensional material and analyzing the carrier concentration and mobility change of the two-dimensional material is constructed, a permanent magnet required by Hall analysis is not required to be carried, the sensor can be compatible with a semiconductor process and portable field detection requirements, and feasibility is provided for application of the sensor to portable ion detection and the like.
Description
Technical Field
The application relates to the technical field of biochemical detection, in particular to an analytical two-dimensional material biochemical sensor based on quantum capacitance-conductivity dual-channel detection and application thereof in ion detection.
Background
The large-scale use of mobile communication and micro-electronic devices, and the increasing popularity of related interconnect technologies in industry and daily life, has placed new demands on developing compact sensor devices for use in a variety of environments. While new nanomaterials are receiving increasing attention as a basis for developing core functional components of next generation sensors. By accurately regulating and controlling the physical and chemical properties of the nano material, ultrasensitive detection can be realized aiming at specific sensing targets. Two-dimensional materials represented by graphene, moS 2, and the like are an important class of these novel materials. Since graphene was first prepared in 2004, gr-FETs have unique advantages in IVD medical detection, detection applications of environmental target molecules, thanks to the excellent electrical properties and good biocompatibility, stability, etc. of graphene two-dimensional materials: i) All atoms of the two-dimensional material are positioned on the surface, so that the two-dimensional material is extremely sensitive to environmental changes and has high detection sensitivity; ii) its sensing principle is based on detection of the charge of a target biochemical molecule by field effect. The biochemical molecules are adsorbed on the surface of the two-dimensional material quickly, and the electric signal detection has real-time property, so that the detection time is short, and the online quick detection can be realized. Meanwhile, the high-quality and large-area preparation technology of graphene has been greatly improved in recent years, and the controllable preparation of wafer-level graphene chips has been realized in the industry, so that the view of graphene applied to various biochemical sensors is not only remained in a laboratory. For example, U.S. Nanosens company has combined Gr-FET and CRISPR-Cas9 gene editing techniques [ Nat. Bio.Eng., https:// doiDOI:. Org/10.1038/s41551-019-0371-x ], which can compare or even outperform PCR fluorescence techniques for short periods of time to detect mutations in a particular gene of the muscular dystrophy genome without any pre-amplification treatment. Recently, a rapid (1 minute) clinical test of SARS-CoV-2 virus using graphene transistors is published by the well-known journal ACS Nano. The detection sensitivity of the kit to clinical samples reaches 243copies/mL, and a direct basis [ ACS Nano, DOI: 10.1021/acsnano.0c02823].
Existing two-dimensional material field effect biochemical sensors mainly rely on changes in the conductance (or resistance) signal of a two-dimensional material to detect the (de) adsorption and (de) binding processes of biomarkers on the surface of the two-dimensional material. However, in such a complex surface interaction process, charged biomarkers are not only able to influence the carrier concentration of the two-dimensional material by field effect, but at the same time they may change the carrier mobility of the two-dimensional material as scattering centers. Therefore, classical conductivity (or resistance) tests cannot distinguish between changes in carrier concentration and mobility of two-dimensional materials, and cannot ascertain the charge or scattering mechanism of biosensing. I.e. a critical sensing process for analyzing the interactions of biomolecules with the surface of two-dimensional materials, presents a significant limitation. The carrier concentration and mobility of the two-dimensional material can be obtained by utilizing the semiconductor Hall effect, so that the biochemical sensing mechanism [ adv.Funct.Mater.2013,23,2301] of the two-dimensional material can be distinguished. However, hall tests generally require the mounting of relatively heavy permanent magnets [ adv. Funct. Mater.2013,23,2301], which makes it difficult to meet the safety requirements of portable measurements.
Disclosure of Invention
To solve the above problems, the applicant provided:
On one hand, the application provides an analytical two-dimensional material biochemical sensor based on quantum capacitance-conductivity double-channel detection, which is characterized by comprising two sensing channels for two-dimensional material quantum capacitance detection and conductivity detection.
Further, the analytical two-dimensional material biochemical sensor comprises a substrate and a solution; a two-dimensional material layer is arranged on the substrate; source and drain electrodes are arranged at two ends of the two-dimensional material layer to form a two-dimensional material in-plane conductivity detection sensing channel; the liquid gate electrode is arranged in the solution, and forms an out-of-plane quantum capacitance detection sensing channel with the two-dimensional material layer.
Further, the solution is dropped on the substrate provided with the two-dimensional material layer or the substrate provided with the two-dimensional material layer is placed in the solution.
Further, the source-drain electrode material is selected from gold, platinum, silver, copper, or aluminum.
Further, the liquid gate electrode is selected from Ag/AgCl, hg/Hg 2SO4, reversible hydrogen electrode
Further, the two-dimensional material is selected from; graphene, reduced graphene oxide, molybdenum disulfide, or boron nitride; the two-dimensional material is transferred onto the substrate by a wet method or a dry method; or directly grown on an insulating sapphire or silicon wafer substrate covered with an insulating SiO 2 layer by CVD.
Further, the substrate is selected from silicon, cellulose acetate or polyethylene terephthalate.
Further, the substrate is a silicon substrate; using a metal foil as a substrate, growing a single-layer graphene thin layer by using a CVD method, and transferring the graphene thin layer to the silicon substrate by using a PMMA method; the liquid gate electrode is an Ag/AgCl pseudo-reference electrode; the solution is phosphate buffer solution with the pH value of 6.5-7.5; a substrate provided with a layer of two-dimensional material is placed in the solution.
Or the substrate is a PET substrate; transferring the molybdenum disulfide thin layer onto a substrate; the liquid gate electrode is an Hg/Hg 2SO4 electrode; the solution is phosphate buffer solution with the pH value of 6.5-7.5; and (3) dropwise adding the solution on the substrate provided with the two-dimensional material layer.
Or the substrate is a cellulose acetate substrate; transferring the boron nitride thin layer onto a substrate; the liquid gate electrode is a reversible hydrogen electrode; the solution is phosphate buffer solution with the pH value of 6.5-7.5; and (3) dropwise adding the solution on the substrate provided with the two-dimensional material layer.
In another aspect, the present application provides an ion detection or analysis method using the above-described analytical two-dimensional material biochemical sensor, characterized in that the method comprises: obtaining quantum capacitance and conductivity characteristic curves of the device by scanning different gate voltages; and (3) obtaining a quantum capacitance and conductivity characteristic curve after concentration change by changing the concentration of ions to be measured, and obtaining a two-dimensional material conductivity, carrier concentration and mobility characteristic curve after decoupling.
Further, the ion may be selected from hydrogen ion, ammonium ion, lithium ion, potassium ion, sodium ion, calcium ion, magnesium ion, aluminum ion, manganese ion, zinc ion, chromium ion, iron ion, ferrous ion, arsenic ion, lead ion, copper ion, cuprous ion, mercury ion, silver ion, hydroxide ion, nitrate ion, chloride ion, sulfate ion, sulfite ion, sulfide ion, carbonate ion, silicate ion, phosphate ion.
The field effect transistor device adopts a traditional classical top gate bottom contact structure device, and comprises a grid electrode, a source electrode and a drain electrode.
Besides the materials, the liquid gate electrode can be made of known usable materials such as platinum wires, gold wires or graphite electrodes according to requirements.
In addition to the above materials, the two-dimensional material may be selected from known usable materials such as silylene, germylene, phosphazene, borazene, stannene, boron nitride, tungsten disulfide, rhenium diselenide, molybdenum carbide, tungsten carbide, tantalum carbide, a metal-organic framework compound, a covalent organic framework compound, a layered double hydroxide, an oxide, and the like, as required.
In addition to the above materials, the substrate may be selected from known usable materials such as plastics, glass, sapphire, silicon wafer coated with silicon dioxide, polyethylene, polypropylene, polybutylene, polystyrene, polyvinyl chloride, polyisobutylene, polyacrylonitrile, polyurethane, polymethyl methacrylate, polymethyl acrylate, polyvinyl acetate, polybutylene terephthalate, polycarbonate, urea-formaldehyde resin, melamine-formaldehyde resin, phenol resin, epoxy resin, polyoxymethylene, polyethylene oxide, polyhexamethylene adipamide, polycaprolactam, polyimide, polydimethylsiloxane, acrylonitrile-styrene-butadiene copolymer, styrene-butadiene-styrene block copolymer, butyl rubber, butadiene isoprene copolymer, cotton fiber, hemp fiber, wood fiber, grass fiber, and the like, as required.
Advantageous effects
The invention provides a two-dimensional material biosensor adopting quantum capacitance-conductivity dual-channel analysis, and simultaneously tests two sensing channels of the two-dimensional material quantum capacitance and conductivity, so as to distinguish the change of carrier concentration and mobility thereof and ascertain the charge or scattering mechanism of biosensing. The analysis type two-dimensional material biosensor based on quantum capacitance-conductivity double-channel detection constructed by the invention is compatible with the semiconductor process and the portable field detection requirement (without carrying a permanent magnet required by the traditional semiconductor Hall detection). In addition, the portable analysis type two-dimensional material biochip constructed based on the accurate electrical detection technology has strong cost competitiveness, simple operation flow, no complex steps of fluorescent marking, amplification and the like, no need of using expensive optical instruments, time and manpower and material resources and other costs are saved, and a new research thought and technical guidance are provided for ion detection and screening of various biomarkers (the detection limit can reach or be superior to fM magnitude).
Drawings
FIG. 1 is a schematic diagram of the structure and circuit wiring of an analytical biochemical sensor based on two-dimensional materials according to the present invention;
FIG. 2A, B is a graph showing the transfer characteristic and capacitance curves before and after hydrogen ion detection, respectively, of an analytical biochemical sensor surface based on graphene as a two-dimensional material according to the present invention;
FIG. 3 is a graph of time-dependent field effect characteristics of an analytical biochemical sensor surface of graphene, a two-dimensional material, for detecting hydrogen ions of different concentrations;
FIG. 4A, B is a graph showing the transfer characteristic and capacitance curves of the two-dimensional material molybdenum disulfide based analytical biochemical sensor surface of the present invention before and after detection of K + ion;
FIG. 5 is a graph of time-dependent field effect characteristics of an analytical biochemical sensor surface of a two-dimensional material molybdenum disulfide of the present invention for detecting K + ions of different concentrations;
FIG. 6A, B is a graph showing the transfer characteristics and capacitance curves of an analytical biochemical sensor surface based on two-dimensional tungsten disulfide of the present invention before and after detecting Mg 2+ ions, respectively;
FIG. 7 is a graph of time-dependent field effect characteristics of an analytical biochemical sensor surface of a two-dimensional material of tungsten disulfide of the present invention for detecting Mg 2+ ions of different concentrations.
Detailed Description
For a better understanding of the present invention, its objects, features and advantages, reference should be made to the following detailed description of its embodiments and to the accompanying drawings, in which specific details are set forth in order to provide a thorough understanding of the present invention, but in which the invention may be practiced in many other ways other than those described below. Therefore, the invention is not limited by the specific implementations disclosed below.
Example 1. Detection of hydrogen ions by graphene field effect transistor based biochemical sensors.
1. Preparation of graphene field effect transistor
(1) And growing a single-layer graphene thin layer by using a CVD method by taking the metal foil as a substrate, and transferring the graphene thin layer onto a silicon substrate by using a traditional PMMA method.
(2) Patterning graphene by adopting a micro-nano processing technology, preparing source and drain gold electrodes at two ends of a graphene layer, and packaging the area outside the graphene thin layer;
(3) And placing the graphene field effect transistor in a buffer solution (such as phosphate buffer solution) solution environment with the pH value of 6.5-7.5, and inserting an Ag/AgCl (pseudo) reference electrode to form a grid electrode.
2. Experimental flow for applying quantum capacitance-conductivity dual-channel analysis type graphene field effect transistor to hydrogen ion detection
(1) And connecting the source electrode, the drain electrode and the grid electrode of the prepared graphene field effect transistor to a lock-in amplifier capable of simultaneously carrying out double-channel detection according to the diagram shown in figure 1. One of the channels detects current or voltage passing between a source and a drain of graphene, and the other channel detects interface current or voltage between graphene and a gate solution.
(2) Changing the grid voltage V ref of the graphene (for example, the scanning range is-0.5V-0.3V), recording the voltage V ds of a channel in a device under a constant current source (for example, I ds -1 mu A), and obtaining the electric conduction (G, left in fig. 2) of the device through conversion of a formula 1, namely, the transfer characteristic curve of the graphene device; the current and phase difference ψ of the other channel at constant voltage, e.g. V ac -7.07mV, is recorded at the same time, and the change curve of the interface capacitance (C inter) with the gate voltage is obtained by conversion of equation 2 (right in fig. 2). By means of the transfer characteristic G (V ref), the charge neutral point (CNP, also called Dirac point) of the graphene device can be obtained, where V Dirac = -90mV.
According to the transconductance g m between the graphene source and the graphene drain and the interface capacitance value far away from the Dirac point (the value can be taken to be 2 mu F/cm 2 here), the initial field effect carrier mobility and the carrier density can be deduced as follows:
μ＝gm/Cinter (3)
And
n＝G/eμ (4)
The hole of the graphene before ion detection is 1000cm 2/V.s, and the electron is 1200cm 2/V.s.
(4) And testing the performance of detecting the concentration of the hydrogen ions at the grid voltage near the inflection point of the transfer characteristic curve, namely V ref = 50mV, namely performing real-time sensing test by replacing the solution to be detected with different hydrogen ion concentrations, and simultaneously monitoring and obtaining the conductivity change and the interface capacitance change of the two-dimensional material to obtain the characteristic curve of the time-dependent field effect and the interface capacitance. Specifically, the grid electrode is inserted into a buffer solution (such as phosphate buffer solution) with the pH value of 3.5-7.5, and the pH value is sequentially measured from high to low in real time. For example, 0.05mL of buffer solution with pH of 7.5 is added dropwise, and the voltage and current of the two channels in the device are recorded to obtain a curve of time-dependent field effect and interface capacitance. Then, according to formulas 3 and 4, a change curve of carrier mobility and carrier concentration with detection is obtained, as shown in fig. 3.
From data analysis, ion adsorption results in: i) Suppression of carrier mobility; ii) increase in electron density at V ref = 0V. This can be attributed to the displacement Δv Dirac = -30mV of the Dirac point: when positively charged hydrogen ions are bound to the graphene surface, they move 30mV in the negative direction. The conductivity change due to carrier mobility and carrier density may be either the same or opposite. It is clear that conductivity-based measurements alone do not describe a comprehensive picture of the biosensing reaction. That is, conventional conductivity measurements cannot themselves untangle complex changes in graphene conductance Δg caused by carrier mobility or carrier density. And by means of the capacitance-conductivity dual-channel analysis type graphene field effect transistor, initial field effect carrier mobility and carrier density can be deduced, and complex changes of graphene conductivity delta G caused by carrier mobility or carrier density are solved, so that more information is obtained. As can be seen from the obvious peak of the solution to be measured in fig. 3, the immunosensor shows higher sensitivity in detecting different concentrations of hydrogen ions than the conventional conductivity signal.
Example 2. Detection of potassium ions by a biochemical sensor based on molybdenum disulfide field effect transistors.
1. Preparation of molybdenum disulfide field effect transistor
And transferring the molybdenum disulfide thin layer to a high polymer (such as PET) substrate, respectively welding a source electrode and a drain electrode at two ends of the molybdenum disulfide, and packaging the region outside the molybdenum disulfide thin layer. And (3) dropwise adding a buffer solution (such as phosphate buffer solution) with the pH value of 6.5-7.5 onto the surface of the molybdenum disulfide, and inserting Hg/Hg 2SO4 into the liquid drops to form a grid.
2. Experimental flow for applying capacitance-conductivity dual-channel analysis type molybdenum disulfide field effect transistor to potassium ion detection
(1) The source electrode, the drain electrode and the grid electrode of the prepared molybdenum disulfide field effect transistor are connected to a lock-in amplifier capable of simultaneously carrying out double-channel detection according to the diagram shown in figure 1. One of the channels detects current or voltage passing between a source electrode and a drain electrode of molybdenum disulfide, and the other channel detects interface current or voltage between molybdenum disulfide and a gate electrode solution.
(2) The grid voltage of molybdenum disulfide is changed (for example, the scanning range is-0.3V-0.4V), and the change curve of the conductance is recorded to obtain a transmission characteristic curve G (V ref) and a neutral point, wherein V CNP =60 mV. While the capacitance change curve is recorded in the other channel as shown to the left in fig. 4. (3) The initial carrier mobility and carrier density of molybdenum disulfide before detection were calculated, the hole before ion detection was 40cm 2/V.s, and the electron was 36cm 2/V.s.
(4) And testing the performance of detecting the concentration of hydrogen ions by the grid voltage near the inflection point of the transfer characteristic curve, namely V ref = 50mV, namely performing real-time sensing test on the to-be-detected solution with different potassium ion concentrations, and simultaneously monitoring to obtain the two-dimensional material conductivity change. Then, the performance of detecting the concentration of potassium ions, namely the field effect characteristic curve depending on the test time, is tested. The grid electrode is inserted into a buffer solution (such as phosphate buffer solution) with the pH value of 3.5-7.5, and the pH value is sequentially measured from high to low in real time. For example, 0.05mL of buffer solution with pH of 7.5 is added dropwise, the voltage in the device is recorded, and the time-dependent field effect characteristic curve is obtained after data normalization, as shown in FIG. 5.
From data analysis, ion adsorption results in: i) Suppression of carrier mobility; ii) increase in electron density at V ref = 0V. This can be attributed to the displacement Δv Dirac = -10mV of the Dirac point: when positively charged potassium ions bind to the molybdenum disulfide surface, they move 50mV in the negative direction. The conductivity change due to carrier mobility and carrier density may be either the same or opposite. It is clear that conductivity-based measurements alone do not describe a comprehensive picture of the biosensing reaction. That is, conventional conductivity measurements cannot themselves untangle complex changes in molybdenum disulfide conductance Δg caused by carrier mobility or carrier density. And by the capacitance-conductivity dual-channel analysis type molybdenum disulfide field effect transistor, the initial field effect carrier mobility and carrier density can be deduced, and the complex change of molybdenum disulfide conductivity delta G caused by the carrier mobility or carrier density is solved, so that more information is obtained. As can be seen from the obvious peak of the solution to be measured in fig. 5, the immunosensor shows higher sensitivity in detecting different potassium ion concentrations than the conventional conductivity signal.
Example 3. Detection of magnesium ions by biochemical sensors based on boron nitride field effect transistors.
1. Preparation of tungsten disulfide field effect transistor
Transferring the boron nitride thin layer onto a cellulose (such as cellulose acetate) substrate, respectively welding a source electrode and a drain electrode at two ends of tungsten disulfide, and packaging the region outside the boron nitride thin layer. And (3) dropwise adding a buffer solution (such as phosphate buffer solution) with the pH value of 6.5-7.5 onto the surface of the boron nitride, and taking a reversible hydrogen electrode as a reference electrode as a grid electrode of the device.
2. Experimental flow for applying capacitance-conductivity dual-channel analysis type boron nitride field effect transistor to magnesium ion detection
(1) The source electrode, the drain electrode and the grid electrode of the prepared tungsten disulfide field effect transistor are connected to a lock-in amplifier capable of simultaneously carrying out double-channel detection according to the diagram shown in figure 1. One of the channels detects the current or voltage between the source and drain electrodes through the tungsten disulfide, and the other channel detects the interface current or voltage between the tungsten disulfide and the gate solution.
(2) The grid voltage of tungsten disulfide is changed (for example, the scanning range is-0.5V-0.3V), and the change curve of the conductance is recorded to obtain a transmission characteristic curve G (V ref) and a neutral point, wherein V CNP = -30mV. While the capacitance change curve is recorded in the other channel as shown to the left in fig. 6.
(3) The initial carrier mobility and carrier density of tungsten disulfide before detection were calculated, the hole was 30cm 2/V.s before ion detection, and the electron was 24cm 2/V.s.
(4) And testing the performance of detecting the concentration of hydrogen ions by the grid voltage near the inflection point of the transfer characteristic curve, namely V ref = 50mV, namely performing real-time sensing test by replacing the solutions to be detected with different magnesium ion concentrations, and simultaneously monitoring and obtaining the conductivity change of the two-dimensional material. Then, the performance of detecting the concentration of magnesium ions is tested, namely, a field effect characteristic curve depending on the test time. The grid electrode is inserted into a buffer solution (such as phosphate buffer solution) with the pH value of 3.5-7.5, and the pH value is sequentially measured from high to low in real time. For example, 0.05mL of buffer solution with pH of 7.5 is added dropwise, the voltage in the device is recorded, and the time-dependent field effect characteristic curve is obtained after data normalization, as shown in FIG. 7.
From data analysis, ion adsorption results in: i) Suppression of carrier mobility; ii) increase in electron density at V ref = 0V. This can be attributed to the displacement Δv Dirac = -170mV of the Dirac point: when positively charged magnesium ions were bound to the tungsten disulfide surface, 170mV was shifted in the negative direction. The conductivity change due to carrier mobility and carrier density may be either the same or opposite. It is clear that conductivity-based measurements alone do not describe a comprehensive picture of the biosensing reaction. That is, conventional conductivity measurements cannot themselves untangle complex changes in tungsten disulfide conductance Δg caused by carrier mobility or carrier density. By means of the capacitance-conductivity dual-channel analysis type tungsten disulfide field effect transistor, initial field effect carrier mobility and carrier density can be deduced, and complex changes of tungsten disulfide conductivity delta G caused by carrier mobility or carrier density are solved, so that more information is obtained. As can be seen from the obvious peak of the solution to be measured in fig. 7, the immunosensor shows higher sensitivity in detecting different magnesium ion concentrations than the conventional conductivity signal.
Claims (5)
1. An analytical two-dimensional material biochemical sensor based on quantum capacitance-conductivity double-channel detection is characterized by comprising two sensing channels for two-dimensional material quantum capacitance detection and conductivity detection; the analytical two-dimensional material biochemical sensor comprises a substrate and a solution; a two-dimensional material layer is arranged on the substrate; source and drain electrodes are arranged at two ends of the two-dimensional material layer to form a two-dimensional material in-plane conductivity detection sensing channel; the solution is provided with a liquid gate electrode which forms an out-of-plane quantum capacitance detection sensing channel with the two-dimensional material layer; the source electrode and drain electrode material is selected from gold, platinum, silver, copper or aluminum; the liquid gate electrode is selected from Ag/AgCl, hg/Hg 2SO4 and reversible hydrogen electrode; the two-dimensional material is selected from graphene, reduced graphene oxide, molybdenum disulfide or boron nitride; the two-dimensional material is transferred onto a substrate by a wet method or a dry method, or is directly grown on an insulating sapphire or a silicon wafer substrate covered with an insulating SiO 2 layer by adopting a CVD method; the solution is phosphate buffer solution with the pH value of 6.5-7.5; the solution is dripped on the substrate provided with the two-dimensional material layer or the substrate provided with the two-dimensional material layer is placed in the solution.
2. The analytical two-dimensional material biochemical sensor of claim 1, the substrate being selected from the group consisting of silicon, cellulose acetate or polyethylene terephthalate.
3. The analytical two-dimensional material biochemical sensor of claim 1, the substrate being a silicon substrate; using a metal foil as a substrate, growing a single-layer graphene thin layer by using a CVD method, and transferring the graphene thin layer to the silicon substrate by using a PMMA method; the liquid gate electrode is an Ag/AgCl pseudo-reference electrode; placing a substrate provided with a two-dimensional material layer in the solution;
Or the substrate is a PET substrate; transferring the molybdenum disulfide thin layer onto a substrate; the liquid gate electrode is an Hg/Hg 2SO4 electrode; dropwise adding the solution onto a substrate provided with a two-dimensional material layer;
Or the substrate is a cellulose acetate substrate; transferring the boron nitride thin layer onto a substrate; the liquid gate electrode is a reversible hydrogen electrode; and (3) dropwise adding the solution on the substrate provided with the two-dimensional material layer.
4. An ion detection or analysis method using the analytical two-dimensional material biochemical sensor according to any one of claims 1 to 3, characterized in that the method comprises: obtaining quantum capacitance and conductivity characteristic curves of the device by scanning different gate voltages; and (3) obtaining a quantum capacitance and conductivity characteristic curve after concentration change by changing the concentration of ions to be measured, and obtaining a two-dimensional material conductivity, carrier concentration and mobility characteristic curve after decoupling.
5. The method of claim 4, wherein the ion is selected from the group consisting of hydrogen ion, ammonium ion, lithium ion, potassium ion, sodium ion, calcium ion, magnesium ion, aluminum ion, manganese ion, zinc ion, chromium ion, iron ion, ferrous ion, arsenic ion, lead ion, copper ion, cuprous ion, mercury ion, silver ion, hydroxide ion, nitrate ion, chloride ion, sulfate ion, sulfite ion, sulfide ion, carbonate ion, silicate ion, and phosphate ion.
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