CN114112929B - Mueller matrix image acquisition system and acquisition method - Google Patents
Mueller matrix image acquisition system and acquisition method Download PDFInfo
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- CN114112929B CN114112929B CN202111444964.1A CN202111444964A CN114112929B CN 114112929 B CN114112929 B CN 114112929B CN 202111444964 A CN202111444964 A CN 202111444964A CN 114112929 B CN114112929 B CN 114112929B
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- 239000011159 matrix material Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 13
- 230000010287 polarization Effects 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000003384 imaging method Methods 0.000 claims abstract description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000002070 nanowire Substances 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
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Abstract
The invention discloses an acquisition system and an acquisition method of a Mueller matrix image, wherein the acquisition system comprises a light source S, a collimating lens CL, a polarizer P, a sample V, a super surface M, an imaging lens L and a detector D which are sequentially arranged to form an optical system; the specific structure of the super surface M is as follows: depositing a metal film on the upper surface of a monocrystalline silicon wafer, dividing the monocrystalline silicon wafer into four quadrants by taking the center of the monocrystalline silicon wafer as an origin of coordinates, opening imprinting units on the surface of the metal film in each quadrant by adopting a photoetching process according to a polarization absorption angle, and etching metal nanowires and silicon nanowires in each imprinting unit; the imaging lens L comprises four convex lenses, and the optical axis of each convex lens is opposite to the center of each quadrant; compared with the prior device, the polarization state of the emergent light of the target surface is analyzed without rotating, the polarization state change can be obtained through single exposure, and the detection time is faster.
Description
Technical Field
The invention belongs to the technical field of polarization detection, and particularly relates to a Mueller matrix image acquisition system and a Mueller matrix image acquisition method.
Background
The polarization response of the measured object to the incident light is described by using a Mueller matrix, and the polarization state of each pixel on the surface of the object can be obtained by obtaining a Mueller matrix image. At present, only a few scientific research institutions develop related research works on a Mueller matrix imaging device, and particularly, a device for rapidly measuring Mueller matrix images is still in a principle exploration and experiment verification stage, and the technical means of the device are still not mature. The core part of the Mueller matrix image acquisition device comprises a polarizing arm and a polarization detection arm. The polarization arm is used for generating a polarization state interacted with a target, and the polarization analysis arm is used for analyzing the change of the polarization state after the incident light interacts with the target. The conventional Mueller matrix image device generally needs to rotate the polarization modulation element of the polarization analysis arm at least four times for analyzing the change of the polarization state in operation, has long working time for completing one measurement, and cannot detect a rapidly-changed target.
Disclosure of Invention
The invention aims to provide a Mueller matrix image acquisition system, which solves the problem of long measurement time of the existing Mueller matrix image measurement device.
It is another object of the invention to provide a method of acquiring Mueller matrix images.
The invention adopts the technical scheme that the Mueller matrix image acquisition system comprises a light source S, a collimating lens CL, a polarizer P, a sample V, a super surface M, an imaging lens L and a detector D which are sequentially arranged to form an optical system;
The specific structure of the super surface M is as follows: depositing a metal film on the upper surface of a monocrystalline silicon wafer, dividing the monocrystalline silicon wafer into four quadrants by taking the center of the monocrystalline silicon wafer as an origin of coordinates, opening imprinting units on the surface of the metal film in each quadrant by adopting a photoetching process according to a polarization absorption angle, and etching metal nanowires and silicon nanowires in each imprinting unit;
The imaging lens L includes four convex lenses, and the optical axis of each convex lens faces the center of each quadrant.
The invention is also characterized in that:
The polarization absorption angle for each quadrant is: the first quadrant is parallel to the X axis, the second quadrant is perpendicular to the X axis, the third quadrant is an included angle of 45 degrees with the positive direction of the X axis, and the fourth quadrant is an included angle of-45 degrees with the positive direction of the X axis.
The metal film is an aluminum film with a thickness of 0.6 μm.
The light source S emits light with a frequency of 8-12um.
The invention adopts another technical scheme that the method for acquiring the Mueller matrix image uses a Mueller matrix image acquisition system, and is implemented according to the following steps:
The unpolarized light emitted by the light source S sequentially passes through the collimating mirror CL and the polarizer P to generate linearly polarized light, the linearly polarized light passes through the transmitted light formed by the sample V, the transmitted light passes through the super surface M and the imaging mirror L to form four images on the detector D, and the polarization state corresponding to each pixel in the target image is obtained through addition and subtraction operation between illumination intensities on the four images;
and changing the light transmission axis of the polarizer P for 4 times, and inverting the Mueller matrix corresponding to each pixel on the target surface by combining the intensity of the four acquired images.
The beneficial effects of the invention are as follows:
Compared with the prior device, the system for acquiring the Mueller matrix image adopts the super surface as the polarization detection arm, does not have a moving part, does not need to rotate when analyzing the polarization state of the emergent light on the surface of the target, can obtain the change of the polarization state through single exposure, and has faster detection time.
Drawings
FIG. 1 is a schematic diagram of the system for acquiring a Mueller matrix image according to the present invention;
FIG. 2 is a schematic representation of a subsurface structure in accordance with the present invention;
fig. 3 is a schematic structural view of an imaging mirror in the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and detailed description.
The Mueller matrix image acquisition system comprises a light source S, a collimating lens CL, a polarizer P, a sample V, a super surface M, an imaging lens L and a detector D which are sequentially arranged to form an optical system as shown in FIG. 1; the device meets the xyz coordinate system of the right hand rule, the main optical axis, namely the incident direction of light, is the z axis, the vertical direction is the y axis perpendicular to the z axis, and the x axis perpendicular to the yz plane.
As shown in fig. 2, the specific structure of the super surface M is: depositing a metal film on the upper surface of a monocrystalline silicon wafer, dividing the monocrystalline silicon wafer into four quadrants by taking the center of the monocrystalline silicon wafer as an origin of coordinates, opening imprinting units on the surface of the metal film in each quadrant by adopting a photoetching process according to a polarization absorption angle, and etching metal nanowires and silicon nanowires in each imprinting unit; the polarization absorption angle for each quadrant in the invention is: the first quadrant is parallel to the X axis, the second quadrant is perpendicular to the X axis, the third quadrant is an included angle of 45 degrees with the positive direction of the X axis, and the fourth quadrant is an included angle of-45 degrees with the positive direction of the X axis. The metal film is an aluminum film with a thickness of 0.6 μm. Selecting a high-resistance silicon wafer with low intrinsic absorption and heat loss in a long-wave infrared spectrum as a substrate and preparing an aluminum/silicon double-layer nano wire grid structure on the surface of the substrate; since the long side of the wire grid structure is much larger than the short side, resonance absorption occurs when the direction of the linear polarization of the incident electromagnetic wave is along the long side of the wire grid, while the linear polarization along the short side of the wire grid is transmitted. The surface aluminum wire grid is used for generating resonance absorption, and the bottom silicon wire grid is used for regulating and controlling the equivalent refractive index, so that the high transmittance in a wide wave band is ensured.
As shown in fig. 3, the imaging lens L includes four convex lenses, each of which has an optical axis facing the center of each quadrant. The convex lens may be one of a plano-convex lens, a biconvex lens, and a meniscus lens.
The light source S emits long infrared light with a light emitting frequency of 8-12 um.
The method for acquiring the Mueller matrix image uses a Mueller matrix image acquisition system, and is implemented specifically according to the following steps:
The unpolarized light emitted by the light source S sequentially passes through the collimating mirror CL and the polarizer P to generate linearly polarized light, the linearly polarized light passes through the transmitted light formed by the sample V, the transmitted light passes through the super surface M and the imaging mirror L to form four images on the detector D, and the polarization state corresponding to each pixel in the target image is obtained through addition and subtraction operation between illumination intensities on the four images;
and changing the light transmission axis of the polarizer P for 4 times, and inverting the Mueller matrix corresponding to each pixel on the target surface by combining the intensity of the four acquired images.
By means of the mode, the obtaining system of the Mueller matrix image adopts the super surface as the polarization detection arm, no moving part exists, compared with the existing device, rotation is not needed when the polarization state of emergent light on the surface of the target is analyzed, the change of the polarization state can be obtained through single exposure, and the detection time is faster.
Claims (2)
- The Mueller matrix image acquisition system is characterized by comprising a light source S, a collimating lens CL, a polarizer P, a sample V, a super surface M, an imaging lens L and a detector D which are sequentially arranged to form an optical system;The specific structure of the super surface M is as follows: depositing a metal film on the upper surface of a monocrystalline silicon wafer, dividing the monocrystalline silicon wafer into four quadrants by taking the center of the monocrystalline silicon wafer as an origin of coordinates, opening imprinting units on the surface of the metal film in each quadrant by adopting a photoetching process according to a polarization absorption angle, and etching metal nanowires and silicon nanowires in each imprinting unit, wherein the method specifically comprises the steps of: the high-resistance silicon wafer is used as a substrate, an aluminum/silicon double-layer nano wire grid structure is prepared on the surface of the high-resistance silicon wafer, the surface layer aluminum wire grid is used for generating resonance absorption, and the bottom layer silicon wire grid is used for regulating and controlling the equivalent refractive index;The polarization absorption angle for each quadrant is: the first quadrant is parallel to the X axis, the second quadrant is perpendicular to the X axis, the third quadrant is an included angle of 45 degrees with the positive direction of the X axis, and the fourth quadrant is an included angle of-45 degrees with the positive direction of the X axis;The imaging lens L comprises four convex lenses, and the optical axis of each convex lens is opposite to the center of each quadrant;the metal film is an aluminum film with the thickness of 0.6 mu m;The light source S emits light with the frequency of 8-12um.
- A method of acquiring a Mueller matrix image, characterized in that, the acquisition system using the Mueller matrix image as claimed in claim 1, implemented in particular as follows:the unpolarized light emitted by the light source S sequentially passes through the collimating mirror CL and the polarizer P to generate linearly polarized light, the linearly polarized light passes through the sample V to form transmitted light, the transmitted light passes through the super surface M and the imaging mirror L to form four images on the detector D, and the polarization state corresponding to each pixel in the target image is obtained through addition and subtraction operation between illumination intensities on the four images;and changing the light transmission axis of the polarizer P for 4 times, and inverting the Mueller matrix corresponding to each pixel on the target surface by combining the intensity of the four acquired images.
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| CN108168704A (en) * | 2017-12-20 | 2018-06-15 | 中国科学院长春光学精密机械与物理研究所 | Infrared polarization inteference imaging spectrometer based on binary cycle stepped phase speculum |
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| EP1660849A2 (en) * | 2003-08-06 | 2006-05-31 | Russell Chipman | Advanced polarization imaging method, apparatus, and computer program product for retinal imaging, liquid crystal testing, active remote sensing, and other applications |
| US7485908B2 (en) * | 2005-08-18 | 2009-02-03 | United States Of America As Represented By The Secretary Of The Air Force | Insulated gate silicon nanowire transistor and method of manufacture |
| CN103197368B (en) * | 2013-04-28 | 2015-08-05 | 南京大学 | A kind of sandwich structure wire grid broadband polarizer and preparation method thereof |
| CN103681965A (en) * | 2013-12-03 | 2014-03-26 | 常州大学 | Preparation method of flexible substrate silicon nanowire heterojunction solar cell |
| CN107917759B (en) * | 2017-12-20 | 2019-11-19 | 中国科学院长春光学精密机械与物理研究所 | Polarization interference imaging spectrometer based on stepped phase mirror and manufacturing method |
| CN110806265A (en) * | 2018-08-06 | 2020-02-18 | 南京理工大学 | Hyperspectral Mueller Imaging Device and Imaging Method |
| WO2020215199A1 (en) * | 2019-04-23 | 2020-10-29 | 合刃科技（深圳）有限公司 | Surface defect detection system and method |
| CN113538381B (en) * | 2021-07-16 | 2024-06-18 | 北京理工大学 | Mueller matrix rapid detection method and detection system for weak light field sample |
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| CN108168704A (en) * | 2017-12-20 | 2018-06-15 | 中国科学院长春光学精密机械与物理研究所 | Infrared polarization inteference imaging spectrometer based on binary cycle stepped phase speculum |
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