CN114107959A - Wafer conveying method for CVD equipment - Google Patents
Wafer conveying method for CVD equipment Download PDFInfo
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- CN114107959A CN114107959A CN202111473733.3A CN202111473733A CN114107959A CN 114107959 A CN114107959 A CN 114107959A CN 202111473733 A CN202111473733 A CN 202111473733A CN 114107959 A CN114107959 A CN 114107959A
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- wafer
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- cvd
- pressure vent
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 235000012431 wafers Nutrition 0.000 claims abstract description 60
- 230000008021 deposition Effects 0.000 claims abstract description 18
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 43
- 238000000151 deposition Methods 0.000 abstract description 18
- 230000002776 aggregation Effects 0.000 abstract description 9
- 238000004220 aggregation Methods 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of CVD (chemical vapor deposition) deposition processing, in particular to a wafer conveying method for CVD equipment, which comprises the following steps: s1: the negative pressure vent hole of Fork finger is arranged into a strip-shaped protruding negative pressure vent hole; s2: during wafer CVD deposition processing, wafers are transferred through a Fork finger with a bar-shaped raised negative pressure vent. The wafer conveying method for the CVD equipment can relieve the problem of particle aggregation points generated on the back of the wafer, so that the CVD deposition processing effect of the wafer can be ensured.
Description
Technical Field
The invention relates to the technical field of CVD (chemical vapor deposition) deposition processing, in particular to a wafer conveying method for CVD equipment.
Background
Chemical Vapor Deposition (CVD), which refers to a process of synthesizing coatings or nanomaterials by reaction of chemical gases or vapors on the surface of a substrate, is the most widely used technique in the semiconductor industry for depositing a variety of materials, including a wide range of insulating materials, most metallic materials and metal alloy materials.
The step coverage performance of the plasma chemical vapor deposition (PECVD) technology is good, and the generated silicon nitride film has a dense structure, good sodium resistance, moisture resistance and corrosion resistance, and is widely applied. For example, chinese patent publication No. CN112670211A discloses "a CVD apparatus", which includes: the plasma sprayer is used for spraying plasma; and a plasma adjusting device for changing the direction of the plasma acting on the wafer to be processed into a vertical direction. The CVD machine in the scheme can change the direction of the plasma acting on the wafer to be processed into the vertical direction, and further can greatly reduce the influence of the plasma on the side wall.
In the CVD deposition process, the chemical vapor deposition reaction of the wafer in the CVD reaction chamber is complicated, the whole process includes about six steps, the process is required to be performed at six different positions of the CVD reaction chamber, and after the process of each step is completed, the wafer is required to be transferred to the next position for processing through a Fork finger. However, the applicant finds that when the wafer is transferred by the Fork finger, large and thick particle aggregation points are easily formed on the back of the wafer, and the particle aggregation points affect the bonding tightness between the wafer and the ECS during the subsequent processing of the ETCH process station, so that He gas in the ECS leaks out, and finally the CVD deposition processing of the wafer is poor. Therefore, how to design a wafer transferring method capable of reducing the possibility of particle aggregation on the backside of the wafer is an urgent technical problem to be solved.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: how to provide a wafer conveying method for a CVD device, which can relieve the problem of particle aggregation points generated on the back of a wafer, thereby ensuring the effect of CVD deposition processing of the wafer.
In order to solve the technical problems, the invention adopts the following technical scheme:
a wafer transfer method for a CVD apparatus, comprising the steps of:
s1: the negative pressure vent hole of Fork finger is arranged into a strip-shaped protruding negative pressure vent hole;
s2: during wafer CVD deposition processing, wafers are transferred through a Fork finger with a bar-shaped raised negative pressure vent.
Preferably, the strip-shaped protrusion type negative pressure vent hole extends along the length direction of the Fork finger.
Preferably, the Fork finger is provided with a plurality of strip-shaped protruding negative pressure vent holes at intervals.
Preferably, the strip-shaped protrusion type negative pressure vent holes are arranged at equal intervals on the Fork finger.
The wafer conveying method for the CVD equipment has the following beneficial effects:
the invention improves the point type protrusion negative pressure vent hole arranged on the upper surface of the Fork finger into the strip type protrusion negative pressure vent hole, so that the gas circulation of the back of the wafer can be increased in a strip line type contact mode, the output mode of the negative pressure gas is changed, the point type aggregation effect on the back of the wafer can be further avoided, the problem of particle aggregation points on the back of the wafer is relieved, the yield of the CVD deposition processing of the wafer is improved, the CVD deposition processing cost of the wafer is reduced, and the CVD deposition processing effect of the wafer can be ensured.
Drawings
For purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made in detail to the present invention as illustrated in the accompanying drawings, in which:
FIG. 1 is a logic block diagram of a wafer transfer method for a CVD apparatus;
FIG. 2 is a schematic diagram of a conventional Fork finger;
FIG. 3 is a schematic diagram of a modified Fork finger.
Reference numerals in the drawings of the specification include: fork finger1, dot type protruding negative pressure vent hole 2, and bar type protruding negative pressure vent hole 3.
Detailed Description
The following is further detailed by the specific embodiments:
example (b):
the applicant has found the following problems in practical work.
1. The model of the machine is Novellus 200mm PECVD deposition equipment.
2. Type of process PECVD deposition, film composition SiN (process temperature: 400C/reaction pressure < 100T).
3. ETCH machine alarm information is chamber ECS He gas leak.
4. When the CVD reaction chamber (chamber) is opened, the position of the wafer (wafer) in the CVD reaction chamber is found to be good, the ECS surface is checked to be normal, and the CVD reaction chamber is checked to have no abnormity.
The applicant has made the following analysis:
during CVD deposition of wafers, the process of wafers in a CVD reaction chamber includes six steps, which need to be completed at six different positions in the CVD reaction chamber. And Fork finger is the transfer assembly that transfers the wafer to the various processing locations and is the only assembly that is in contact with the wafer. At the same time, applicants have found that there are multiple areas on the back of the wafer with particulate (particle) accumulation, corresponding exactly to the number of spot-bump negative pressure vents provided on Fork finger.
For this reason, the applicant thought of improvement of the transfer fitting Fork finger in the wafer CVD deposition process, and devised the following wafer transfer method for the CVD apparatus.
As shown in fig. 1, the wafer transferring method for CVD equipment includes the following steps:
s1: the negative pressure vent hole of Fork finger is arranged into a strip-shaped protruding negative pressure vent hole; specifically, the original dot-type protruded negative pressure vent hole 2 on the upper surface of Fork finger1 is modified into a strip-shaped protruded negative pressure vent hole 3 with stronger ventilation capability. The strip-shaped protrusion type negative pressure vent hole extends along the length direction of the Fork finger.
S2: during wafer CVD deposition processing, wafers are transferred through a Fork finger with a bar-shaped raised negative pressure vent.
The applicant finds that the dot type raised negative pressure vent hole arranged on the upper surface of the Fork finger is easy to generate the dot type accumulation effect during the process of transferring the wafer, and further causes the problem of particle accumulation points on the back of the wafer.
Therefore, the invention improves the point type protrusion negative pressure vent hole (as shown in fig. 2) arranged on the upper surface of the Fork finger into the strip-shaped protrusion negative pressure vent hole (as shown in fig. 3), so that the gas circulation of the back of the wafer can be increased in a strip line type contact mode, the output mode of the negative pressure gas and the stress mode of the back of the wafer are changed, the point type aggregation effect on the back of the wafer can be avoided, the problem of particle aggregation points on the back of the wafer is relieved, the yield of the wafer CVD deposition processing is improved, the cost of the wafer CVD deposition processing is reduced, and the effect of the wafer CVD deposition processing can be ensured. Since ETCH exception handling generally takes 36 hours, the scheme of the invention can improve the utilization rate of CVD equipment.
In the specific implementation process, a plurality of strip-shaped protruding negative pressure vent holes are arranged on the Fork finger at intervals. The strip-shaped protrusion type negative pressure vent holes are arranged at equal intervals on the Fork finger.
The wafer placing stability can be ensured through the strip-shaped protruding negative pressure vent holes arranged at intervals.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that, while the invention has been described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Meanwhile, the detailed structures, characteristics and the like of the common general knowledge in the embodiments are not described too much. Finally, the scope of the claims should be determined by the content of the claims, and the description of the embodiments and the like in the specification should be used for interpreting the content of the claims.
Claims (4)
1. A wafer transfer method for a CVD apparatus, comprising the steps of:
s1: the negative pressure vent hole of Fork finger is arranged into a strip-shaped protruding negative pressure vent hole;
s2: during wafer CVD deposition processing, wafers are transferred through a Fork finger with a bar-shaped raised negative pressure vent.
2. The wafer transfer method for a CVD apparatus of claim 1, wherein: the strip-shaped protrusion type negative pressure vent hole extends along the length direction of the Fork finger.
3. The wafer transfer method for a CVD apparatus of claim 2, wherein: a plurality of strip-shaped protruding negative pressure vent holes are arranged on the Fork finger at intervals.
4. The wafer transfer method for a CVD apparatus of claim 3, wherein: the strip-shaped protrusion type negative pressure vent holes are arranged at equal intervals on the Fork finger.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111473733.3A CN114107959A (en) | 2021-11-30 | 2021-11-30 | Wafer conveying method for CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111473733.3A CN114107959A (en) | 2021-11-30 | 2021-11-30 | Wafer conveying method for CVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114107959A true CN114107959A (en) | 2022-03-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111473733.3A Pending CN114107959A (en) | 2021-11-30 | 2021-11-30 | Wafer conveying method for CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114107959A (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217041A (en) * | 1990-01-22 | 1991-09-24 | Dainippon Screen Mfg Co Ltd | Substrate-carrying arm |
| JPH05251544A (en) * | 1992-03-05 | 1993-09-28 | Fujitsu Ltd | Carrier |
| JPH0710314A (en) * | 1993-06-30 | 1995-01-13 | Shibaura Eng Works Co Ltd | Handling device for receiving and delivering substrate |
| JPH08203982A (en) * | 1995-01-20 | 1996-08-09 | Sony Corp | Conveying jig of wafer |
| JPH09139414A (en) * | 1995-11-13 | 1997-05-27 | Kokusai Electric Co Ltd | Wafer transfer plate |
| JP2000100895A (en) * | 1998-09-18 | 2000-04-07 | Nikon Corp | Substrate transfer device, substrate holding device, and substrate processing device |
| JP2008177238A (en) * | 2007-01-16 | 2008-07-31 | Tokyo Electron Ltd | Substrate transfer device and vertical heat treatment device |
| TW200927622A (en) * | 2007-12-27 | 2009-07-01 | Opto Finetech Co Ltd | Transfer robot for spinner system, transport hand thereof and vacuum supply apparatus thereof |
| US20090284894A1 (en) * | 2008-05-19 | 2009-11-19 | Entegris, Inc. | Electrostatic chuck |
| KR20100131055A (en) * | 2009-06-05 | 2010-12-15 | 그린스펙(주) | Wafer automatic transfer and measuring device for organometallic chemical vapor deposition process |
| JP2011211119A (en) * | 2010-03-30 | 2011-10-20 | Fuji Electric Co Ltd | Wafer carrying device and wafer carrying method |
| KR20120045757A (en) * | 2010-11-01 | 2012-05-09 | 우완동 | Non contact transport apparatus |
| JP2018110148A (en) * | 2016-12-28 | 2018-07-12 | 日本特殊陶業株式会社 | Vacuum suction member |
-
2021
- 2021-11-30 CN CN202111473733.3A patent/CN114107959A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217041A (en) * | 1990-01-22 | 1991-09-24 | Dainippon Screen Mfg Co Ltd | Substrate-carrying arm |
| JPH05251544A (en) * | 1992-03-05 | 1993-09-28 | Fujitsu Ltd | Carrier |
| JPH0710314A (en) * | 1993-06-30 | 1995-01-13 | Shibaura Eng Works Co Ltd | Handling device for receiving and delivering substrate |
| JPH08203982A (en) * | 1995-01-20 | 1996-08-09 | Sony Corp | Conveying jig of wafer |
| JPH09139414A (en) * | 1995-11-13 | 1997-05-27 | Kokusai Electric Co Ltd | Wafer transfer plate |
| JP2000100895A (en) * | 1998-09-18 | 2000-04-07 | Nikon Corp | Substrate transfer device, substrate holding device, and substrate processing device |
| JP2008177238A (en) * | 2007-01-16 | 2008-07-31 | Tokyo Electron Ltd | Substrate transfer device and vertical heat treatment device |
| TW200927622A (en) * | 2007-12-27 | 2009-07-01 | Opto Finetech Co Ltd | Transfer robot for spinner system, transport hand thereof and vacuum supply apparatus thereof |
| US20090284894A1 (en) * | 2008-05-19 | 2009-11-19 | Entegris, Inc. | Electrostatic chuck |
| KR20100131055A (en) * | 2009-06-05 | 2010-12-15 | 그린스펙(주) | Wafer automatic transfer and measuring device for organometallic chemical vapor deposition process |
| JP2011211119A (en) * | 2010-03-30 | 2011-10-20 | Fuji Electric Co Ltd | Wafer carrying device and wafer carrying method |
| KR20120045757A (en) * | 2010-11-01 | 2012-05-09 | 우완동 | Non contact transport apparatus |
| JP2018110148A (en) * | 2016-12-28 | 2018-07-12 | 日本特殊陶業株式会社 | Vacuum suction member |
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Application publication date: 20220301 |