CN114075693A - Control method and system for secondary feeding and computer storage medium - Google Patents
Control method and system for secondary feeding and computer storage medium Download PDFInfo
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- CN114075693A CN114075693A CN202010819440.5A CN202010819440A CN114075693A CN 114075693 A CN114075693 A CN 114075693A CN 202010819440 A CN202010819440 A CN 202010819440A CN 114075693 A CN114075693 A CN 114075693A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The embodiment of the invention discloses a control method and a system for secondary feeding and a computer storage medium; the system comprises: the device comprises a control device, a first mobile device, a monitoring device and a second mobile device; wherein the control device is arranged in the crystal pulling furnace or outside the crystal pulling furnace; the first moving device is arranged on the seed crystal cable and controls the seed crystal cable to move downwards or upwards based on the instruction of the control device; the monitoring device is arranged on a bracket on the inner wall of a furnace inner channel in the crystal pulling furnace to monitor whether an extension piece in the secondary feeding device is in contact with and carried on the bracket; the second moving device is arranged on a suspension rod in the secondary feeding device, and the suspension rod is controlled to move downwards based on the instruction of the control device so as to realize the downward movement or the ascending of the conical valve.
Description
Technical Field
The embodiment of the invention relates to a wafer preparation technology, in particular to a control method and a control system for secondary feeding and a computer storage medium.
Background
The crystal pulling furnace is a professional device for producing single crystal rods. In the current production process, a blocky polycrystalline silicon raw material is usually put into a quartz crucible to be melted, the temperature of the melt is stable after the melting is finished, and a single crystal rod is pulled by a Czochralski method in a mode that a seed crystal is in contact with the melt. In the melting process, as the blocky polycrystalline silicon raw materials are changed into liquid, the space occupied by gaps among the blocky raw materials is released, the height of the polycrystalline silicon is reduced, and a quartz crucible has larger filling space, so that a longer crystal bar cannot be produced by one-time feeding. In view of the phenomenon, the conventional scheme is to perform secondary feeding to the quartz crucible after the primary fed polycrystalline silicon is melted so as to increase the total feeding amount in the production process, so that the effective weight proportion of the produced crystal bar is increased, the proportion of the cost of the quartz crucible in the total cost is reduced, and the production cost is reduced.
However, the operation of the secondary feeding is manually performed at present, and in the manual operation process, a great risk of prolonging the working time due to the occurrence of a process accident possibly caused by an error operation sequence or a mistaken data input occurs, so that the production efficiency is greatly influenced by the scheme of manually performing the secondary feeding operation at present.
Disclosure of Invention
In view of this, embodiments of the present invention are directed to a method, a system, and a computer storage medium for controlling secondary feeding; the probability of occurrence of process accidents can be reduced, the condition of prolonging the working time is avoided, and the production efficiency of the single crystal bar is improved.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a control system for secondary feeding, where the system includes: the device comprises a control device, a first mobile device, a monitoring device and a second mobile device; wherein,
the control device is arranged in the crystal pulling furnace or outside the crystal pulling furnace; the first moving device is arranged on the seed crystal cable and controls the seed crystal cable to move downwards or upwards based on the instruction of the control device; the monitoring device is arranged on a bracket on the inner wall of a furnace inner channel in the crystal pulling furnace to monitor whether an extension piece in the secondary feeding device is in contact with and carried on the bracket; the second moving device is arranged on a suspension rod in the secondary feeding device, and the suspension rod is controlled to move downwards based on the instruction of the control device so as to realize the downward movement or the ascending of the conical valve.
In a second aspect, an embodiment of the present invention provides a method for controlling secondary feeding, where the method includes:
executing a first instruction to move a seed cable downwards so that the secondary feeding device moves downwards from an initial position according to the first instruction and a set first speed;
in the process of moving the seed crystal cable downwards, detecting whether an extension piece 211 in the secondary feeding device is in contact with a bracket on the inner wall of a furnace inner channel in the crystal pulling furnace;
corresponding to the contact of the extension piece and the bracket, executing a second instruction to move the suspender downwards so that the conical valve moves downwards to a set target position according to the second instruction and a set second speed, and putting the polycrystalline silicon raw material contained in the secondary feeding device into a quartz crucible in the crystal pulling furnace; the second speed is used for controlling the feeding speed of the polycrystalline silicon raw material to the quartz crucible.
In a third aspect, an embodiment of the present invention provides a computer storage medium, where a control program for secondary feeding is stored, and when the control program for secondary feeding is executed by at least one processor, the steps of the control method for secondary feeding according to the second aspect are implemented.
The embodiment of the invention provides a control method and a system for secondary feeding and a computer storage medium; the secondary feeding device can be automatically moved downwards and safely carried on the bracket, and after the secondary feeding device is fixed on the bracket, the suspension rod is controlled to automatically move downwards to a target position so as to realize secondary feeding of the polycrystalline silicon raw material. The whole secondary feeding process can reduce or even avoid the participation of manual operation, thereby reducing the probability of accidents or risks in the secondary feeding process and improving the process realization efficiency of secondary feeding.
Drawings
FIG. 1 is a schematic view of a crystal pulling furnace according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a control system for secondary feeding according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a device shape according to an embodiment of the present invention;
FIG. 4 is a schematic view of the state of the downward-moving seed crystal cable according to the embodiment of the present invention;
FIG. 5 is a schematic view of the contact state of the extension member and the bracket according to the embodiment of the present invention;
FIG. 6 is a schematic view of a feeding state of the boom moving downward according to the embodiment of the present invention;
FIG. 7 is a schematic view of the state of the seed crystal lifting cable and the suspension rod according to the embodiment of the present invention;
FIG. 8 is a ladder diagram of a Programmable Logic Controller (PLC) according to an embodiment of the present invention;
fig. 9 is a schematic flow chart of a control method for secondary feeding according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to FIG. 1, there is shown a structure of an exemplary crystal pulling furnace 10 capable of implementing embodiments of the present invention, the crystal pulling furnace 10 capable of secondary charging, the crystal pulling furnace 10 may include: the furnace comprises a furnace inner channel 11, a furnace cover 12, a furnace chamber 13 and a secondary feeding device 2; the quartz crucible 14 and the heaters 15 distributed around the quartz crucible 14 are positioned in the furnace chamber 13, and the polycrystalline silicon raw material can be contained in the quartz crucible 14 and is heated and melted by the heaters 15 to form a melt 16; the furnace passage 11 provides a space for the secondary feeding device 2 to move in the vertical direction at the time of secondary feeding, and the device 2 is connected to the furnace cover 12 by a seed crystal cable 17.
In some examples, the apparatus 2 may include a feed cylinder 21, a hanger rod 22, and a conical shutter 23, both ends of which are open, and the feed cylinder 21 may be used to add polycrystalline silicon feedstock to the quartz crucible 14, based on the illustration of FIG. 1. In some examples, the upper end of the cartridge 21 may be referred to as a port in appropriate application scenarios; accordingly, the lower end of the charging barrel 21 may be referred to as a dispensing opening in the appropriate application scenario. A suspension rod 22 is arranged in the cylinder body of the charging cylinder 21, the top end of the suspension rod 22 can be connected with the seed crystal cable 17, and the suspension rod can move in the vertical direction in the cylinder body of the charging cylinder 21; and a cone-shaped valve 23 is connected with the bottom of the suspension rod 22 so as to close the feeding port of the charging barrel 21, wherein the cone-shaped valve 23 is small at the upper part and big at the lower part, and the diameter of the lower end is larger than that of the feeding port. Based on this, when the suspension rod 22 moves upwards for a certain distance along the vertical direction, the conical valve 23 can also move upwards along the vertical direction to close the feeding port of the feeding cylinder 21, and at this time, the polycrystalline silicon raw material 3 to be fed to the quartz crucible 14 is contained in the feeding cylinder 21; when the suspension rod 22 moves downwards for a certain distance along the vertical direction, the conical valve 23 can move downwards along the vertical direction, but the diameter of the upper part of the conical valve 23 is smaller than that of the feeding opening, so that the polycrystalline silicon raw material in the feeding barrel 21 is fed into the quartz crucible 14 through the gap between the conical valve 23 and the feeding opening. Generally, the outer wall of the charging drum 21 will be provided with an extension 211 perpendicular to the outer wall, such as a flange welded to the outer wall, and correspondingly, the inner wall of the furnace passage 11 will be provided with a bracket 111, so that the charging drum 21 will support the charging drum 21 to prevent it from further moving downwards after the charging drum 21 has moved downwards in the vertical direction for a certain distance.
It is understood that the structure of the crystal pulling furnace 10 shown in fig. 1 may be added with other components not shown in fig. 1 in a specific application scenario, and the embodiment of the present invention will not be described in detail.
Currently, the crystal pulling process is mainly implemented by a crystal pulling furnace 10 such as shown in fig. 1, and in some examples, the charging process in the crystal pulling process may include: first, a quartz crucible 14 filled with a polycrystalline silicon raw material is placed in a furnace chamber 13, and heated by a heater 15 to perform primary melting to form a melt 16, which may be referred to as primary charging. As will be appreciated, since the polycrystalline silicon feedstock is generally a solid block, and is deposited in the quartz crucible 14 in a state that occupies a relatively large space, after the polycrystalline silicon feedstock is melted into the melt 16, the space occupied by the gaps between the block feedstock is released, resulting in a reduction in the height of the polycrystalline silicon melt 16 and a relatively large filling space remaining in the quartz crucible 14.
Then, in order to increase the effective weight ratio of the crystal bar and reduce the proportion of the cost of the quartz crucible in the total cost to reduce the production cost, a secondary feeding operation is usually performed, and the specific operation steps can include: firstly, filling the polysilicon raw material 3 needing additional feeding into a feeding cylinder 21 of a secondary feeding device 2, and lifting a suspender 22 to enable a conical valve 23 to close a feeding port of the feeding cylinder 21; then, the charging barrel 21 is moved downward from the initial position in the furnace passage 11 by the manual operation of the operator through the seed crystal cable 17 until the extension piece 211 of the outer wall of the charging barrel 21 is mounted on the bracket 111 of the inner wall of the furnace passage 11; subsequently, the operator manually moves the boom 22 downward so that the conical valve 23 cannot completely close the feeding port of the charging barrel 21, and the polycrystalline silicon raw material 3 in the charging barrel 21 falls into the quartz crucible 14 from the feeding port along the gap between the conical valve 23 and the feeding port of the charging barrel 21, thereby completing the secondary feeding.
Finally, after the secondary feeding is completed, the polycrystalline silicon raw material 3 added in the quartz crucible 14 through the secondary feeding is heated by the heater 15 to be melted to form a new melt, and at the moment, the height of the melt in the quartz crucible 14 is close to the inner height of the quartz crucible 14, so that the quartz crucible 14 is more fully utilized, the effective weight proportion of the crystal bar is increased, and the production cost is reduced.
For the feeding process explained in the above example, especially for the secondary feeding process, the operator is required to manually complete the operation, and in view of the proficiency and the working capability of different operators, the probability of accidents occurring during the operation process of the operator cannot be estimated, so that the working efficiency is reduced. For example, in the step of moving the loading drum 21 downward from the initial position in the furnace passage 11 until the extension piece 211 is mounted on the bracket 111, the downward movement speed of the loading drum 21 is manually controlled by an operator, and there is a risk that the bracket 111 or the extension piece 211 is damaged due to an impact on the bracket 111 or the extension piece 211 caused by an excessively high downward movement speed of the extension piece 211 during the mounting of the extension piece 211 on the bracket 111. In addition, for the step of moving the suspension rod 22 downwards so that the conical valve 23 cannot completely close the feeding port of the feeding cylinder 21 and the polycrystalline silicon raw material 3 in the feeding cylinder 21 falls into the quartz crucible 14 from the feeding port along the gap between the conical valve 23 and the feeding port of the feeding cylinder 21, the downward moving speed of the suspension rod 22 is also controlled by manual operation of an operator, and during the downward moving process of the suspension rod 22, too high downward moving speed occurs, which causes a phenomenon that a large amount of polycrystalline silicon raw material 3 falls into the quartz crucible 14 in a short time, thereby possibly causing impact of the polycrystalline silicon raw material 3 on the quartz crucible 14 and possibly causing deviation of the input amount, for example, if the input amount of the polycrystalline silicon raw material 3 in secondary feeding is small, the quartz crucible 14 cannot be fully utilized, and the effect of reducing the cost cannot be achieved; if the amount of the polycrystalline silicon raw material 3 in the secondary feeding is large in a short time, the molten liquid can splash and overflow the quartz crucible 14, and the overflowing high-temperature liquid can damage other parts in the furnace chamber 13 of the crystal pulling furnace 10, so that accidents are caused, shutdown and maintenance are caused, and the time of the crystal pulling process is delayed.
In view of the problems in the foregoing schemes, the embodiment of the present invention is expected to provide a control system 20 for secondary feeding, which can reduce or even avoid the participation of manual operations in the secondary feeding process by means of the system 20, thereby reducing the probability of accidents or risks occurring in the secondary feeding process and improving the process implementation efficiency of secondary feeding. Referring now to FIG. 2, a control system 20 for secondary batch charging is shown, which may be used in the crystal pulling furnace 10 of FIG. 1, according to an embodiment of the present invention, wherein the system 20 may include: a control device 201, a first mobile device 202, a monitoring device 203, and a second mobile device 204. In some examples, the control device 201 may be located within the crystal pulling furnace 10 of FIG. 1 or outside the crystal pulling furnace 10; the first moving device 202 may be disposed on the seed crystal cable 17, and controls the downward movement or the upward movement of the seed crystal cable 17 based on the instruction of the control device 201; the monitoring device 203 can be arranged on the bracket 111 on the inner wall of the furnace inner channel 11 in the crystal pulling furnace 10 to monitor whether the extension piece 211 in the secondary feeding device 2 is contacted with and carried on the bracket 111; the second moving device 204 may be installed on the boom 22 in the secondary charging device 2, and controls the downward movement or the upward movement of the boom 22 based on the command of the control device 201 to realize the downward movement or the upward movement of the cone-shaped shutter 23.
With respect to the control system 20 shown in fig. 2, in some examples, the control device 201 is configured to send a first instruction to the first mobile device 202;
the first moving device 202 is configured to execute the first instruction to move down the seed cable 17 so that the secondary feeding device 2 moves down from the initial position according to the first instruction and according to the set first speed;
the monitoring device 203 is configured to detect whether the extension piece 211 in the secondary feeding device 2 is in contact with the bracket 111 on the inner wall of the furnace channel 11 in the crystal pulling furnace 10; and, in response to the contact of the extension 211 with the carriage 111, transmitting a signal to the control device 201 indicative of the contact condition;
the control device 201 is further configured to fix the secondary feeding device 2 on the bracket 111 based on the signal for representing the contact state, and send a second command to the second moving device 204;
the second moving device 204 is configured to execute the second instruction to move the suspension rod 22 downwards so that the conical valve 23 moves downwards to a set target position according to the second instruction at a set second speed, so as to put the polycrystalline silicon raw material contained in the secondary feeding device 2 into the quartz crucible 14 in the crystal pulling furnace 10; wherein the second speed is used for controlling the feeding speed of the polycrystalline silicon raw material to the quartz crucible 14.
It should be noted that, because the impact resistance of the secondary feeding device 2 is weak, it needs to be carried on the carriage 111 at a slower speed, and based on this, for the first instruction, the downward moving speed of the first moving device 202 instructed by the second instruction may be preferably fast first and slow later, in some examples, the first moving device 202 is configured to: executing the first instruction, and moving the seed crystal cable 17 downwards by a preset distance from the initial position according to a set initial speed; and, after the seed crystal cable 17 moves down a preset distance, continuing to move down the seed crystal cable 17 at a set contact speed based on the first instruction; wherein the initial velocity is greater than the contact velocity. Specifically, since the initial position is far from the holder 111, the initial speed of the first moving device 202 moving down the seed cable 17 can be fast, and within the preset distance, it can be considered as a safety zone that does not cause impact; after the first moving device 202 moves the seed cable 17 down to a predetermined distance (for example, closer to the bracket 111), in order to prevent the impact on the secondary feeding device 2, the first moving device 202 may move the seed cable 17 down at a slower speed (i.e., the contact speed) until the extension piece 211 in the secondary feeding device 2 contacts the bracket 111, so as to prevent the risk of damage caused by the impact.
In addition, in order to prevent the risk caused by the fact that a large amount of polycrystalline silicon raw material 3 falls into the quartz crucible 14 in a short time in the feeding process, the second speed can control the feeding speed of the polycrystalline silicon raw material 3, so that the short-time large amount of feeding is avoided, and the risk is prevented.
The control system 20 shown in fig. 2 automatically moves the secondary feeding device 2 downward to be safely mounted on the carriage 111, and controls the boom 22 to automatically move downward to a target position after the secondary feeding device 2 is fixed to the carriage 111, thereby achieving secondary feeding of the polycrystalline silicon raw material. The whole secondary feeding process can reduce or even avoid the participation of manual operation, thereby reducing the probability of accidents or risks in the secondary feeding process and improving the process realization efficiency of secondary feeding.
For the system 20 shown in fig. 2, in some examples, the monitoring device 203 may specifically include a Touch Sensor disposed on a contact surface of the bracket 111 and the extending member 211; the contact sensor is used for judging whether the bracket 111 is in contact with the extension piece 211 or not so as to determine whether the secondary feeding device 2 is carried on the bracket 111 or not. In some examples, the contact sensor may indicate a contact state between the bracket 111 and the extension 211 by outputting a signal of "0" or "1", for example, the contact sensor may output a "0" signal when there is no contact between the bracket 111 and the extension 211; the contact sensor may output a "1" signal when contact is made between the bracket 111 and the extension 211.
With respect to the system 20 shown in fig. 2, in some examples, after the control device 201 receives the signal for indicating the contact state transmitted by the monitoring device 203, for example, after the control device 201 receives the 1 signal transmitted by the contact sensor, the control device 201 immediately sends a stop command to the first moving device 202 to instruct the first moving device 202 to stop moving down the seed cable 17, so that the secondary feeding device 2 is fixed on the bracket 111 and does not move down any more.
With the system 20 shown in fig. 2, after the second moving device 204 moves the boom 22 downwards based on the second command to move the conical valve 23 downwards to the set target position, the polysilicon raw material contained in the secondary feeding device 2 will be fed into the quartz crucible 14 in the crystal pulling furnace 10 through the gap between the conical valve 23 and the feeding port of the feeding cylinder 21 at a feeding rate corresponding to the second speed, and after the second moving device 204 executes the second command for a while, the polysilicon raw material can be considered to have been completely fed into the quartz crucible 14, at this time, the secondary feeding process is finished, and the secondary feeding device 2 needs to be restored to the initial state. Based on this, the control device 201 is further configured to send a third instruction to the first mobile device 201 and the second mobile device 204 after sending the second instruction and waiting for a set time period; accordingly, the first moving device 201 is further configured to execute the third instruction to lift the seed cable 17 so that the secondary feeding device 2 is lifted to the initial position; the second movement device 204 is further configured to execute the third command to raise the boom 22 such that the cone shutter 23 closes the dispensing opening of the cartridge 21 of the secondary dispensing device 2.
In the control system 20 for secondary charging, in addition to the monitoring device 203 mounted on the bracket 111 of the inner wall of the furnace channel 11 in the crystal pulling furnace 10, specifically, on the contact surface between the bracket 111 and the extension piece 211, the control device 201, the first moving device 202, and the second moving device 204 may be integrated into one device and mounted on the upper portion of the charging barrel 21 in the secondary charging device 2, so that it is possible to mount the first moving device 202 on the seed cable 17 and mount the second moving device 204 on the boom 22 in the secondary charging device 2, and at this time, the control device 201 is in the crystal pulling furnace 10; in this case the device is as shown in fig. 3. Of course, the control device 201 may also be disposed outside the crystal pulling furnace 10 as a separate device, and may be embodied as a device capable of signal processing and transmission, such as: wireless devices, mobile or cellular phones (including so-called smart phones), Personal Digital Assistants (PDAs), consoles, computers, upper computers, etc., and accordingly, the seed cable 17 may be a cable that not only provides power to the first mobile device 202 and the second mobile device 204, but also serves as a carrier for commands sent or transmitted by the control device 201.
Based on the content explained in the foregoing technical solution, the embodiment of the present invention describes a detailed workflow of performing secondary feeding by using the aforementioned control system 20 for secondary feeding by using a specific example, and the workflow may include:
first, the first moving device 202 moves the seed cable 17 downwards at a first speed by executing a first instruction sent by the control device 201, so that the secondary feeding device 2 moves downwards from the initial position at the first speed; as shown in fig. 4, the arrow indicates the downward movement direction of the secondary feeder 2. It should be noted that the downward movement speed of the first moving device 202 may be preferably fast before slow, that is, the initial speed of the first moving device 202 moving down the seed cable 17 may be fast, which may be regarded as a safe area without causing impact; after having moved down by the preset distance, in order to prevent an impact against the secondary feeding device 2, the first moving device 202 may move down the seed cable 17 at a slower speed (i.e., the contact speed), so that the extension 211 in the secondary feeding device 2 is slowly contacted with the holder 111. It is understood that the monitoring device 203, which may be a Touch Sensor in particular, always detects the contact state between the extension 211 and the bracket 111 during the downward movement.
Subsequently, when the contact Sensor detects that the extension piece 211 is in contact with the bracket 111, as shown in fig. 5, the position of the secondary feeder 2 when it is mounted on the bracket 111 can be output; when the extending part 211 is in contact with the bracket 111, the contact sensor can transmit a signal for describing that the extending part 211 is in contact with the bracket 111, and the signal is transmitted to the control device 201, and the control device 201 can send a stop instruction to the first moving device 202 after receiving the signal transmitted by the contact sensor, so as to instruct the first moving device 202 to stop moving down the seed cable 17, so that the secondary feeding device 2 is fixed on the bracket 111 and does not move down.
Then, in order for the extension piece 211 to be stably fixed on the bracket 111, the control device 201 may preferably wait for a period of time, for example, 3000 milliseconds; subsequently, a second command is sent to the second moving device 204, and the second moving device 204 moves down the boom 22 at a second speed by executing the second command sent by the control device 201 so that the conical shutter 23 moves down to the target position at the second speed. As shown in FIG. 6, the polysilicon raw material contained in the secondary feeding device 2 is fed into the quartz crucible 14 in the crystal pulling furnace 10 through the gap between the conical valve 23 and the feeding port of the feeding barrel 21 at a feeding rate corresponding to the second speed.
Then, since the feeding of the polysilicon crystal raw material takes time, the control device 201 may count time by a timer after sending the second instruction, the counted time length of the timer is 5000 milliseconds, and after the timer technology is completed, the control device 201 may send a third instruction, as shown by an arrow in fig. 7, the first moving device 201 may raise the secondary feeding device 2 to the initial position by executing the third instruction to raise the seed cable 17 at a third speed; the second movement means 204 may close the dispensing opening of the cartridge 21 of the secondary dispensing device 2 by executing the third command to raise the boom 22 at a third speed so that the cone shutter 23 closes the dispensing opening of the cartridge 21.
Finally, the secondary charging device 2 is restored to the state before the secondary charging and stopped, under the control of the control system 20 for the secondary charging.
For the control process of the above workflow, the control process may be represented by a PLC ladder diagram (LAD) shown in fig. 8, and for the control process shown in fig. 8, reference may be made to an explanation or explanation mode for the PLC ladder diagram, which is not described in detail in the embodiments of the present invention.
Based on the same inventive concept of the foregoing technical solution, referring to fig. 9, it shows a control method of secondary feeding provided by an embodiment of the present invention, which can be applied to the control system 20 of secondary feeding set forth in the foregoing technical solution; the method can comprise the following steps:
s901: downwards moving the seed crystal cable 17 to enable the secondary feeding device 2 to downwards move from the initial position according to the set first speed;
s902: detecting whether the extension piece 211 in the secondary feeding device 2 is in contact with the bracket 111 on the inner wall of the furnace inner passage 11 in the crystal pulling furnace 10 during the process of moving down the seed crystal cable 17;
s903: correspondingly to the contact between the extension piece 211 and the bracket 111, the suspension rod 22 is moved downwards to enable the conical valve 23 to move downwards to a set target position according to a set second speed, so as to put the polycrystalline silicon raw material contained in the secondary feeding device 2 into the quartz crucible 14 in the crystal pulling furnace 10; wherein the second speed is used for controlling the feeding speed of the polycrystalline silicon raw material to the quartz crucible 14.
For the technical solution shown in fig. 9, in some examples, the downward moving of the seed crystal cable 17 in step S901 may cause the secondary feeding device 2 to move downward from the initial position according to a set first speed, and specifically includes:
moving the seed crystal cable 17 downwards by a preset distance from the initial position according to a set initial speed;
after the seed crystal cable 17 moves downwards for a preset distance, the seed crystal cable 17 continues to move downwards according to a set contact speed; wherein the initial velocity is greater than the contact velocity.
For the solution shown in fig. 9, in some examples, the method further comprises: in response to the contact of the extension piece 211 with the holder 111, the downward movement of the seed cable 17 is stopped to fix the secondary charging device 2 on the holder 111 without moving downward.
For the solution shown in fig. 9, in some examples, the method further comprises:
after the boom starts to move downwards until a set time period, the seed crystal cable 17 is lifted to enable the secondary feeding device 2 to be lifted to the initial position; and the boom 22 is raised so that the cone shutter 23 closes the dispensing opening of the charging barrel 21 of the secondary dispensing device 2.
For the above technical solution, each step and the specific implementation example thereof can be implemented according to the technical solution of the control system 20 for secondary feeding, which is not described herein again.
It can be understood that each step in the technical solution shown in fig. 9 and a specific implementation example thereof may be implemented in a form of hardware or a form of software functional module.
If the software module is implemented as a software functional module and is not sold or used as a standalone product, the software module may be stored in a computer readable storage medium, and based on the understanding, a part of the technical solution of the present embodiment or all or part of the technical solution may be embodied in a software product stored in a storage medium, and include several instructions to enable a computer device (which may be a personal computer, a server, or a network device) or a processor to execute all or part of the steps of the method of the present embodiment. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
Therefore, the present embodiment provides a computer storage medium, which stores a control program for secondary feeding, and when the control program for secondary feeding is executed by at least one processor, the steps of the control method for secondary feeding in fig. 9 in the above technical solution and a specific example thereof are implemented.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (12)
1. A control system for secondary charging, the system comprising: the device comprises a control device, a first mobile device, a monitoring device and a second mobile device; wherein,
the control device is arranged in the crystal pulling furnace or outside the crystal pulling furnace; the first moving device is arranged on the seed crystal cable and controls the seed crystal cable to move downwards or upwards based on the instruction of the control device; the monitoring device is arranged on a bracket on the inner wall of a furnace inner channel in the crystal pulling furnace to monitor whether an extension piece in the secondary feeding device is in contact with and carried on the bracket; the second moving device is arranged on a suspension rod in the secondary feeding device, and the suspension rod is controlled to move downwards based on the instruction of the control device so as to realize the downward movement or the ascending of the conical valve.
2. The system of claim 1, wherein the control device is configured to send a first instruction to the first mobile device;
the first moving device is configured to move the seed crystal cable downwards based on the first instruction so that the secondary feeding device moves downwards according to the first instruction and a set first speed from an initial position;
the monitoring device is configured to detect whether an extension piece in the secondary feeding device is in contact with a bracket on the inner wall of a channel in the crystal pulling furnace; and, in response to said extension member contacting said carriage, transmitting a signal indicative of the contact condition to said control means;
the control device is further configured to fix the secondary feeding device to be mounted on the bracket based on the signal for representing the contact state, and send a second instruction to the second moving device;
the second moving device is configured to move the suspension rod downwards based on the second instruction so that the conical valve moves downwards to a set target position according to the second instruction at a set second speed, and the polycrystalline silicon raw material contained in the secondary feeding device is fed into a quartz crucible in the crystal pulling furnace; the second speed is used for controlling the feeding speed of the polycrystalline silicon raw material to the quartz crucible.
3. The system of claim 2, wherein the first mobile device is configured to: based on the first instruction, moving the seed crystal cable downwards to a preset distance from an initial position at a set initial speed; and after the seed crystal cable moves downwards to the preset distance, continuing to move downwards the seed crystal cable according to a set contact speed based on the first instruction; wherein the initial velocity is greater than the contact velocity.
4. The system according to claim 1, characterized in that said monitoring means, in particular comprising a contact sensor, are provided at the contact surface of said carriage with said extension; the contact sensor is used for judging whether the bracket is in contact with the extension piece or not so as to determine whether the secondary feeding device is carried on the bracket or not.
5. The system of claim 4, wherein the contact sensor is configured to indicate a contact state between the carriage and the extension member by outputting a signal of "0" or "1"; wherein the contact sensor outputs a "0" signal when there is no contact between the bracket and the extension member; the contact sensor outputs a "1" signal when contact is made between the bracket and the extension member.
6. The system of claim 1, wherein the control device is further configured to:
and immediately sending a stop instruction to the first moving device after receiving the signal for representing the contact state transmitted by the monitoring device so as to instruct the first moving device to stop moving the seed crystal cable downwards, so that the secondary feeding device is fixed on the bracket and does not move downwards.
7. The system of claim 1, wherein the control device is further configured to send a third instruction to the first mobile device and the second mobile device after sending the second instruction and waiting a set period of time; correspondingly, the first moving device is further configured to execute the third instruction to raise the seed cable so that the secondary feeding device is raised to the initial position; the second moving device is also configured to execute the third instruction to lift the suspension rod so that the conical valve closes a feeding port of a charging barrel in the secondary feeding device.
8. A control method for secondary feeding is characterized by comprising the following steps:
moving the seed crystal cable downwards to enable the secondary feeding device to move downwards from the initial position according to the set first speed;
detecting whether an extension piece in the secondary feeding device is in contact with a bracket on the inner wall of a furnace inner channel in the crystal pulling furnace or not in the process of moving the seed crystal cable downwards;
corresponding to the contact of the extension piece and the bracket, the suspension rod is moved downwards so that the conical valve moves downwards to a set target position according to a set second speed, and the polycrystalline silicon raw material contained in the secondary feeding device is fed into a quartz crucible in the crystal pulling furnace; the second speed is used for controlling the feeding speed of the polycrystalline silicon raw material to the quartz crucible.
9. The method as claimed in claim 8, wherein the downward moving of the seed crystal cable causes the secondary feeding device to move downward from the initial position at a set first speed, and specifically comprises:
moving the seed crystal cable by a preset distance from the initial position according to a set initial speed;
after the seed crystal cable moves downwards for a preset distance, the seed crystal cable continues to move downwards according to a set contact speed; wherein the initial velocity is greater than the contact velocity.
10. The method of claim 8, further comprising: and stopping downwards moving the seed crystal cable to fix the secondary feeding device on the bracket and not downwards moving any more corresponding to the contact of the extension piece and the bracket.
11. The method of claim 8, further comprising:
after the boom starts to move downwards until a set time period, the seed crystal cable is lifted, so that the secondary feeding device is lifted to the initial position; and the lifting rod is lifted to enable the conical valve to close the feeding port of the charging barrel in the secondary feeding device.
12. A computer storage medium storing a control program for secondary charging, the control program for secondary charging implementing the steps of the control method for secondary charging according to any one of claims 8 to 11 when executed by at least one processor.
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US4014656A (en) * | 1973-10-03 | 1977-03-29 | Siemens Aktiengesellschaft | Monitoring device for crystal pulling apparatus |
CN202017072U (en) * | 2010-11-29 | 2011-10-26 | 镇江环太硅科技有限公司 | Secondary charging device for single crystal furnace |
US20150233013A1 (en) * | 2012-11-20 | 2015-08-20 | Shin-Etsu Handotai Co., Ltd. | Method of charging raw material, method of manufacturing single crystals, and single-crystal manufacturing apparatus |
CN106757309A (en) * | 2016-11-11 | 2017-05-31 | 宝鸡市宏佳有色金属加工有限公司 | A kind of multiple charging mechanism of single crystal growing furnace continuous crystal-pulling |
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2020
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US4014656A (en) * | 1973-10-03 | 1977-03-29 | Siemens Aktiengesellschaft | Monitoring device for crystal pulling apparatus |
CN202017072U (en) * | 2010-11-29 | 2011-10-26 | 镇江环太硅科技有限公司 | Secondary charging device for single crystal furnace |
US20150233013A1 (en) * | 2012-11-20 | 2015-08-20 | Shin-Etsu Handotai Co., Ltd. | Method of charging raw material, method of manufacturing single crystals, and single-crystal manufacturing apparatus |
CN106757309A (en) * | 2016-11-11 | 2017-05-31 | 宝鸡市宏佳有色金属加工有限公司 | A kind of multiple charging mechanism of single crystal growing furnace continuous crystal-pulling |
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