CN114069185B - A tunable magnetostatic wave resonator - Google Patents

Abstract

An adjustable static magnetic wave resonator belongs to the technical field of microwave radio frequency devices. The resonator comprises a resonator body, wherein the resonator body comprises a resonant cavity, a lower substrate arranged in the resonant cavity, a radio-frequency input end arranged on one side of the resonant cavity and a radio-frequency output end arranged at the top of the resonant cavity; a first microstrip line located above the lower substrate; the second microstrip line is positioned on the lower substrate and coupled with the first microstrip line; the disc is connected with the radio frequency output end; and the YIG substrate is positioned above the first microstrip line and the second microstrip line. The adjustable static magnetic wave resonator can be tunable from a frequency band of 4GHz-12GHz, the 3dB bandwidth is extremely narrow, the Q value range is 2000-4500, the assembling, adjusting and measuring efficiency of the resonator is effectively improved, the processing technology is simplified, the processing cost is reduced, and the batch production of the yttrium iron garnet tuned resonator is facilitated.

Description

A tunable magnetostatic wave resonator

technical field

The invention belongs to the technical field of microwave radio frequency devices, and in particular relates to a tunable magnetostatic wave resonator.

Background technique

In order to adapt to the development of small and lightweight communication equipment, low phase noise and wide tuning bandwidth are required for signal sources. At present, the common microwave solid-state signal sources are dielectric resonant oscillator (DRO), voltage controlled oscillator (VCO) or two. A combination of yttrium iron garnet (YIG) resonators and tunable magnetostatic wave resonators based on yttrium iron garnet (YIG) resonators.

At present, tunable magnetostatic wave resonators based on yttrium iron garnet (YIG) are mainly made by utilizing the ferromagnetic resonance properties of yttrium iron garnet materials. In the traditional resonant structure, yttrium iron garnet balls are generally used as the resonator, and the ring coupling structure is used to realize the excitation of the resonator. However, the yttrium iron garnet spheres in the resonator cavity of this type of resonator need to be prepared through a complex and high-precision polishing process, which is difficult and the corresponding processing equipment is relatively expensive. At the same time, since the yttrium iron garnet ball needs to be fine-tuned to use, the debugging and assembly of the resonator is more complicated.

SUMMARY OF THE INVENTION

The purpose of the present invention is to propose a tunable magnetostatic wave resonator in view of the defects existing in the background art.

For achieving the above object, the technical scheme adopted in the present invention is as follows:

A tunable magnetostatic wave resonator, comprising:

Resonator main body 1, the resonator main body 1 includes a resonant cavity, a lower substrate 7 arranged in the resonant cavity, a radio frequency input end 2 arranged on one side of the resonant cavity, and a radio frequency output end 3 arranged on the top of the resonant cavity;

a first microstrip line 4, the first microstrip line 4 is located on the lower substrate 7 and connected to the radio frequency input end 2 extending into the resonant cavity;

a second microstrip line 5, the second microstrip line 5 is located on the lower substrate 7 and coupled with the first microstrip line 4;

a disc 31, the disc 31 is connected with the radio frequency output end 3 extending into the resonant cavity from the top of the resonant cavity;

YIG substrate 6, the YIG substrate 6 includes a GGG substrate 61 and a YIG film 62 grown on the surface of the GGG substrate 61; the YIG substrate 6 is located between the first microstrip line 4 and the second microstrip line 5 and completely cover the coupling area of the first microstrip line 4 and the second microstrip line 5 ; the YIG substrate 6 is located directly under the disk 31 .

Further, the first microstrip line 4 is arranged along the length direction of the lower substrate 7, and the first microstrip line 4 includes an input section 41, a first transition section 42, and a U-shaped section 43 connected in sequence, and the input section 41 is connected to the radio frequency input. End 2; the second microstrip line 5 includes a fork section 51, a second transition section 52, and a ground covering section 53 that are connected in sequence. The two branches of the U-shaped section 43 are located in the two inner recesses of the fork-shaped section 51, and the U-shaped section 43 is not in contact with the fork-shaped section 51. The grounding cover section 53 is provided with a grounding conduction hole 54. The ground via 54 penetrates through the lower substrate 7 and is connected to the ground layer 71 provided on the bottom surface of the lower substrate 7; the GGG substrate 61 is located above the U-shaped section 43 and the forked section 51, and is connected to the U-shaped section 43 and the forked section. 51, the GGG substrate 61 completely covers the U-shaped segment 43 and the fork-shaped segment 51, and does not contact the ground covering segment 53.

Further, the ground covering section 53 is U-shaped, and includes a first ground section vertically connected to the second transition section 52, and two second ground sections vertically connected to both ends of the first ground section, respectively. Located on both sides of the lower substrate 7 in the length direction, the length of the second ground segment is equal to the length of the lower substrate 7 , and the length of the first ground segment is equal to the width of the lower substrate 7 .

Further, the width of the input section 41 is greater than the width of the first transition section 42 , and the width of the first transition section 42 is equal to the width of the second transition section 52 .

Further, the first microstrip line 4 and the second microstrip line 5 are axially symmetrical with respect to the center line of the lower substrate 7 in the length direction.

Further, the resonator body 1 is in an external magnetic field 8 , and the direction of the external magnetic field 8 is parallel to the width direction of the lower substrate 7 .

Further, the radio frequency input end 2 and the radio frequency output end 3 use radio frequency insulators, the radio frequency input end 2 is connected to the first microstrip line 4 by welding, and the radio frequency output end 3 is connected to the disc 31 by conductive glue.

Further, the resonant cavity includes:

The first cavity 10, the lower substrate 7, the first microstrip line 4, the second microstrip line 5 and the YIG substrate 6 are all located in the first cavity 10;

The second cavity 11, the second cavity 11 is formed by protruding upward from the top of the first cavity 10, the top surface of the YIG substrate 6 is located in the second cavity, the two sides of the YIG substrate 6 and the side surfaces of the second cavity 11 space between

The third cavity 12 , the third cavity 12 is formed by protruding upward from the top of the second cavity 11 , and the disk 31 is located in the third cavity 12 .

Further, the YIG substrate 6 is located directly below the disk 31 , that is, the center of the YIG substrate 6 is directly opposite the center of the disk 31 .

Further, the YIG thin film 62 is grown on the GGG substrate 61 by liquid phase epitaxy.

Compared with the prior art, the beneficial effects of the present invention are:

1. The present invention adopts the yttrium iron garnet film to replace the yttrium iron garnet ball as the resonator, adopts the microstrip line structure to replace the complex coupling circuit structure, and the obtained adjustable magnetostatic wave resonator can be tunable from the 4GHz-12GHz frequency band, The 3dB bandwidth is extremely narrow, and the Q value ranges from 2000 to 4500, which not only effectively improves the assembly and commissioning efficiency of the resonator, but also simplifies the processing technology, reduces the processing cost, and is more conducive to the realization of batches of yttrium iron garnet tuning resonators production.

2. A tunable magnetostatic wave resonator provided by the present invention, through the design of the cavity structure, and the layout of the microstrip line, the disc, and the YIG substrate, so that the horizontally input radio frequency signal is coupled in the cavity, and then rotates. For vertical upward output, the isolation between input and output is increased.

3. A tunable magnetostatic wave resonator provided by the present invention realizes coupling of radio frequency signals to the YIG film through the structural design of the first microstrip line and the second microstrip line; , and the setting of the width of the microstrip line, adjust the RF magnetic field coupled to the YIG film material to be the strongest, and obtain a better response waveform; and by controlling the size of the disk and the distance between the disk and the YIG film material, the overall resonance adjust the response waveform of the controller.

4. The tunable magnetostatic wave resonator provided by the present invention realizes the good grounding of the microstrip line through the second transition section and the grounding covering section of the second microstrip line. The end opposite to the input end forms a wrapping of the YIG substrate from the periphery, and the grounding layer conducted to the backside of the lower substrate is used to realize the grounding, which has the effect of reducing the resonance of the substrate.

Description of drawings

FIG. 1 is a three-dimensional structural diagram of a tunable magnetostatic wave resonator according to an embodiment of the present invention.

2 is a front view of a tunable magnetostatic wave resonator according to an embodiment of the present invention;

3 is a schematic structural diagram of a lower substrate and a YIG substrate of a tunable magnetostatic wave resonator according to an embodiment of the present invention;

4 is a back view of a lower substrate of a tunable magnetostatic wave resonator according to an embodiment of the present invention;

5 is a structural diagram of a first microstrip line and a second microstrip line of a tunable magnetostatic wave resonator according to an embodiment of the present invention;

FIG. 6 is a three-dimensional electromagnetic simulation result of the tunable magnetostatic wave resonator according to the embodiment of the present invention when the external magnetic field is 2512 Oe.

Detailed ways

In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the embodiments described in the present invention are a part of the embodiments of the present invention, not all of the embodiments. .

Example

A tunable magnetostatic wave resonator provided by the embodiment, as shown in FIG. 1 to FIG. 2 , includes:

Resonator main body 1, the resonator main body 1 includes a resonant cavity, a lower substrate 7 arranged in the resonant cavity, a radio frequency input end 2 arranged on one side of the resonant cavity, and a radio frequency output end 3 arranged on the top of the resonant cavity;

a first microstrip line 4, the first microstrip line 4 is located on the lower substrate 7 and connected to the radio frequency input end 2 extending into the resonant cavity;

a second microstrip line 5, the second microstrip line 5 is located on the lower substrate 7 and coupled with the first microstrip line 4;

a disc 31, the disc 31 is connected with the radio frequency output end 3 extending into the resonant cavity from the top of the resonant cavity;

YIG substrate 6, the YIG substrate 6 includes a GGG (ie gadolinium gallium garnet) substrate 61 connected to the first microstrip line 4 and a YIG film 62 grown on the surface of the GGG substrate 61; the YIG substrate 6 It is located on the first microstrip line 4 and the second microstrip line 5 and completely covers the coupling area of the first microstrip line 4 and the second microstrip line 5 ; the YIG substrate 6 is located directly under the disk 31 .

Specifically, the radio frequency input end 2 and the radio frequency output end 3 use radio frequency insulators, the radio frequency input end 2 is connected to the first microstrip line 4 by welding, and is used for inputting radio frequency signals, and the radio frequency output end 3 is connected to the disc 31 by conductive glue, Used to output RF signals.

Specifically, the resonant cavity is made of metal aluminum, and includes: a first cavity 10, the lower substrate 7, the first microstrip line 4, the second microstrip line 5 and the YIG substrate 6 are all located in the first cavity 10; the second Cavity 11, the second cavity 11 is formed by protruding upward from the top of the first cavity 10, the top surface of the YIG substrate 6 is located in the second cavity, between the two sides of the YIG substrate 6 and the side surface of the second cavity 11 There is a distance; the third cavity 12, the third cavity 12 is formed by protruding upward from the top of the second cavity 11, the disc 31 is located in the third cavity 12, and the lower part of the radio frequency output end 3 protrudes into the third cavity 12 and is connected Disc 31.

As shown in FIG. 3 to FIG. 5 , the first microstrip line 4 is arranged along the length direction of the lower substrate 7 , and the first microstrip line 4 includes an input section 41 , a first transition section 42 , a U-shaped section 43 connected in sequence, and the input section 41 is connected to the radio frequency input end 2; the second microstrip line 5 includes a fork section 51, a second transition section 52, and a ground covering section 53 that are connected in sequence, and the fork section 51 is mountain-shaped and has two inner recesses . The two branches of the U-shaped section 43 are located in the two inner recesses of the fork-shaped section 51, and the U-shaped section 43 is not in contact with the fork-shaped section 51. The grounding cover section 53 is provided with a grounding conduction hole 54. The ground via 54 penetrates through the lower substrate 7 and is connected to the ground layer 71 provided on the bottom surface of the lower substrate 7; the GGG substrate 61 is located above the U-shaped section 43 and the forked section 51, and is connected to the U-shaped section 43 and the forked section. 51, the GGG substrate 61 completely covers the U-shaped segment 43 and the fork-shaped segment 51, and does not contact the ground covering segment 53.

As shown in FIG. 5 , the ground covering section 53 is U-shaped, and includes a first ground section vertically connected to the second transition section 52 and two second ground sections vertically connected to both ends of the first ground section. The sections are located on both sides in the length direction of the lower substrate 7 , the length of the second ground section is equal to the length of the lower substrate 7 , and the length of the first ground section is equal to the width of the lower substrate 7 . The width of the input section 41 is greater than the width of the first transition section 42 , and the width of the first transition section 42 is equal to the width of the second transition section 52 . The first microstrip line 4 and the second microstrip line 5 are axis-symmetrical about the center line of the lower substrate 7 in the longitudinal direction.

As shown in FIG. 2 , the resonator body 1 is in an external magnetic field 8 , and the two magnetic poles of the external magnetic field 8 are respectively located on both sides of the resonator body 1 , and the directions are parallel to the width direction of the lower substrate 7 .

In the tunable magnetostatic wave resonator provided by the embodiment, under the action of the external magnetic field 8, when the frequency of the input radio frequency signal is equal to the ferromagnetic resonance frequency of the YIG film 62, the first microstrip line 4 of the radio frequency input end 2 will The horizontally incident radio frequency signal is coupled to the YIG substrate 6 connected to the lower substrate 7 , and then coupled to the disk 31 , and is output vertically upward through the radio frequency output terminal 3 . With the change of the external magnetic field, the ferromagnetic resonance frequency of the YIG thin film 62 changes, thus realizing the tunable characteristics.

6 is a three-dimensional electromagnetic simulation result of the tunable magnetostatic wave resonator according to the embodiment of the present invention when the external magnetic field is 2512 Oe; the magnetic field size range of the external magnetic field 8 is set to be 816 Oe to 3555 Oe. It can be seen from FIG. 6 that when the size of the external magnetic field 8 is 2512 Oe, the 3dB bandwidth of the resonator in the embodiment of the present invention is 6.7MHz, and the Q value reaches about 4300.

Therefore, in the present invention, the yttrium iron garnet film is used to replace the yttrium iron garnet ball as the resonator, and the microstrip line structure is used to replace the complex coupling circuit structure, and the obtained tunable magnetostatic wave resonator can be tunable in the frequency band of 4GHz-12GHz, The 3dB bandwidth is extremely narrow, and the Q value ranges from 2000 to 4500, which not only effectively improves the assembly and commissioning efficiency of the resonator, but also simplifies the processing technology, reduces the processing cost, and is more conducive to the realization of batches of yttrium iron garnet tuning resonators production.

The above are only preferred embodiments of the present invention, and are not intended to be the only or limit the present invention. Those skilled in the art should understand that, without departing from the scope of the present invention, various changes or equivalent substitutions made to the present invention all belong to the protection scope of the present invention.

Claims (9)

1. an adjustable magnetostatic wave resonator, is characterized in that, comprises: A resonator main body (1), the resonator main body (1) comprising a resonant cavity, a lower substrate (7) arranged in the resonant cavity, a radio frequency input end (2) arranged on one side of the resonant cavity, and a radio frequency input end (2) arranged on the top of the resonant cavity The RF output terminal (3); a first microstrip line (4), the first microstrip line (4) is located on the lower substrate (7) and is connected to the radio frequency input end (2) extending into the resonant cavity; a second microstrip line (5), the second microstrip line (5) being located on the lower substrate (7) and coupled to the first microstrip line (4); a disc (31), the disc (31) is connected to a radio frequency output end (3) extending into the resonant cavity from the top of the resonant cavity; YIG substrate (6), the YIG substrate (6) includes a GGG substrate (61) and a YIG film (62) grown on the surface of the GGG substrate (61); the YIG substrate (6) is located in the first above the microstrip line (4) and the second microstrip line (5), and completely covering the coupling area of the first microstrip line (4) and the second microstrip line (5); the YIG substrate (6) Located just below the disc (31). 2 . The tunable magnetostatic wave resonator according to claim 1 , wherein the first microstrip line ( 4 ) is arranged along the length direction of the lower substrate ( 7 ), and the first microstrip line ( 4 ) comprises sequential The connected input section (41), the first transition section (42), and the U-shaped section (43), and the input section (41) is connected to the radio frequency input end (2); the second microstrip line (5) includes sequentially connected The fork-shaped section (51), the second transition section (52), and the grounding cover section (53); the two branches of the U-shaped section (43) are located in the two inner recesses of the fork-shaped section (51), and the U-shaped section (51) has two branches. The segment (43) is not in contact with the fork segment (51), the grounding cover segment (53) is provided with a grounding via (54), and the grounding via (54) penetrates through the lower substrate (7) and is connected to the lower substrate (7). The ground layer (71) provided on the bottom surface of the substrate (7) is connected; the GGG substrate (61) is located above the U-shaped segment (43) and the fork-shaped segment (51), and is connected to the U-shaped segment (43) and the fork-shaped segment (51) contact, the GGG substrate (61) completely covers the U-shaped segment (43) and the fork-shaped segment (51), and does not contact the ground covering segment (53). 3. The tunable magnetostatic wave resonator according to claim 2, characterized in that the ground covering section (53) is U-shaped, comprising a first ground section vertically connected to the second transition section (52), and The two second grounding sections are respectively vertically connected to both ends of the first grounding section, the second grounding sections are located on both sides in the length direction of the lower substrate (7), the length of the second grounding section is equal to the length of the lower substrate (7), The length of a ground segment is equal to the width of the lower substrate (7). 4 . The tunable magnetostatic wave resonator according to claim 2 , wherein the width of the input section ( 41 ) is greater than the width of the first transition section ( 42 ), and the width of the first transition section ( 42 ) is the same as the width of the second transition section ( 42 ). The segments (52) are of equal width. 5. The tunable magnetostatic wave resonator according to claim 1, characterized in that, the first microstrip line (4) and the second microstrip line (5) are about the centerline axis of the length direction of the lower substrate (7) symmetry. 6 . The tunable magnetostatic wave resonator according to claim 1 , wherein the resonator body ( 1 ) is in an external magnetic field ( 8 ), and the direction of the external magnetic field ( 8 ) is parallel to the lower substrate ( 6 . 7) Width direction. 7 . The tunable magnetostatic wave resonator according to claim 1 , wherein the radio frequency input end ( 2 ) and the radio frequency output end ( 3 ) use radio frequency insulators, and the radio frequency input end ( 2 ) is welded to the first The microstrip line (4) is connected, and the radio frequency output end (3) is connected with the disc (31) through conductive glue. 8. The tunable magnetostatic wave resonator according to claim 1, wherein the resonant cavity comprises: The first cavity (10), the lower substrate (7), the first microstrip line (4), the second microstrip line (5) and the YIG substrate (6) are all located in the first cavity (10); The second cavity (11), the second cavity (11) is formed by protruding upward from the top of the first cavity (10), the top surface of the YIG substrate (6) is located in the second cavity, the YIG substrate (6) There is a distance between the two sides of the second cavity (11) and the sides of the second cavity (11); The third cavity (12), the third cavity (12) is formed by protruding upward from the top of the second cavity (11), and the disc (31) is located in the third cavity (12). 9 . The tunable magnetostatic wave resonator according to claim 1 , wherein the YIG thin film ( 62 ) is grown on the GGG substrate ( 61 ) by liquid phase epitaxy. 10 .

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