CN114054872A - Programmable silicon electrode for electrolytic processing and preparation method thereof - Google Patents
Programmable silicon electrode for electrolytic processing and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of special processing, and relates to a programmable silicon electrode for electrolytic processing and a preparation method thereof. The programmable silicon electrode consists of a heavily doped silicon substrate, an insulating layer, an external isolating layer, a middle isolating layer, a conductive unit array, a connecting wire, a conductive lead-out array and an electrode power supply end. The auxiliary electrode units distributed on the side wall surface of the electrode are used as electrodes, so that the side wall of the hole can be directly machined; the internal shape of the machined variable cross-section hole is programmed and controlled online by changing the power-on control of the auxiliary electrode unit, so that the electrode can be used for machining various variable cross-section holes with different internal shapes. The preparation method of the invention obtains the electrode substrate, the detection unit and the insulating layer through etching and deposition processes, and the process is mature, so the preparation method has application potential of mass production.
Description
Technical Field
The invention belongs to the technical field of special processing, relates to a programmable silicon electrode for electrolytic processing and a preparation method thereof, and particularly relates to a programmable silicon electrode design and preparation method for variable cross-section hole micro electrolytic processing.
Background
With the development of modern science and technology, the design and application of the variable cross-section hole on the mechanical part are more and more. The hole structures with the diameters changing along with the depths have special performances in the aspects of fluid injection, air film formation, heat dissipation and cooling and the like, and are widely applied to the fields of aerospace, automobiles, industrial printing, chemical fiber chemical industry, precision instruments and the like, such as bamboo joint cooling holes on turbine blades of an aero-engine, special-shaped diffusion holes for air film cooling, fuel oil spray holes on an oil nozzle of a high-end diesel engine, funnel-shaped spray holes on an industrial ink jet printing head, spray holes for chemical fiber filaments with special shapes and the like. The parts not only have strict requirements on machining precision, surface smoothness and no surface damage, but also have huge production demand, and the requirement for developing a high-precision, high-efficiency and no-damage machining method is more urgent.
At present, the traditional mechanical drilling method cannot process variable-section holes, and special processing technologies for metal alloy materials, such as electric spark processing, electrolytic processing, pulse laser processing and the like, have respective characteristics in the aspects of processing precision and efficiency. Among them, the electric discharge machining for the tapered hole machining has entered the mass production stage, but it is difficult to machine a hole structure having a more complicated shape by this method, and the inevitable electrode loss also lowers the machining accuracy. Although the laser optical path system with special design can process the variable cross-section hole, the processing of the high aspect ratio structure is difficult, and a surface heat affected layer exists. In contrast, varying the process parameters on-line in the electrochemical machining process can machine a variety of holes having complex variable cross-sections. Researches prove that the feasibility of processing the variable-section hole by directly changing parameters by adopting the hollow electrode is realized, and a basic process route of firstly processing a through hole and then processing the internal shape by adopting a special electrode is formed aiming at the hole structure with the high aspect ratio, but the following two problems of the electrolytic processing process aiming at the variable-section hole are not solved.
One is the difficulty of preparing electrodes in advance for holes of varying cross-section of different internal structures. Because the internal structure shape of the variable cross-section hole is changeable, different types of electrodes need to be designed and prepared in advance aiming at different cross-section shapes, the special shape and the partial side wall insulation of the electrode make the preparation of the electrode very difficult, no electrode which is universal for the variable cross-section holes with various shapes exists, and the internal shape of the variable cross-section hole is difficult to control.
Secondly, the electrode and the processed straight hole are difficult to center. The method comprises the steps of firstly processing a straight-wall hole, and then changing the internal structure of the straight-wall hole by using a special electrode through electrolytic machining to form a basic process for processing the variable cross-section hole, wherein the processing of the straight-wall hole needs to adopt a tool electrode with a completely insulated side wall, the internal shape of the variable cross-section hole needs to adopt a partially insulated tool electrode, the tool electrode needs to be replaced between two working procedures, and the centers of the electrode and the hole between the two working procedures are difficult to be completely aligned, so that the internal structure of the variable cross-section hole is processed unevenly, the processing precision is damaged, and even the variable cross-section hole cannot be processed.
Disclosure of Invention
The invention aims to provide a programmable silicon electrode for electrolytic machining and a preparation method thereof, which are used for solving the problem of machining of variable-section holes at present, and can realize the composite functions of straight-wall hole machining and hole side wall complex shape machining without replacing electrodes between procedures.
The invention provides a programmable silicon electrode for electrolytic machining, which consists of a heavily doped silicon substrate, an insulating layer, an external isolating layer, a middle isolating layer, a conductive unit array, a connecting wire, a conductive leading-out array and an electrode power supply end, wherein the heavily doped silicon substrate is provided with a plurality of conducting units; the heavily doped silicon substrate is divided into an electrode clamping part and an electrode processing part, the front surface of the electrode clamping part is provided with a conductive leading-out array and an electrode power supply end, and the back surface of the electrode clamping part is provided with a positioning groove; the front surface of the electrode clamping part and the front surface of the electrode processing part are provided with middle isolation layers, connecting wires are arranged on the middle isolation layers, external isolation layers cover the connecting wires, the connecting wires are used for connecting the conductive unit arrays and the conductive leading-out arrays and supplying power to the conductive unit arrays, and the middle isolation layers are used for isolating the connecting wires, the conductive unit leading-out arrays and the heavily doped silicon substrate; the conductive unit array is located on an external isolation layer on the surface of the electrode processing part, the external isolation layer is used for isolating the connecting line and electrolyte, the conductive unit array is close to the tail end of the electrode processing part, the insulating layer covers the side wall surface of the programmable silicon electrode, and the insulating layer is used for isolating stray current between the side wall of the programmable silicon electrode and a workpiece to be processed.
The programmable silicon electrode for electrolytic processing and the preparation method thereof provided by the invention have the characteristics and advantages that:
the programmable silicon electrode for electrolytic machining can be used for machining holes with variable cross sections, and straight-wall hole machining and hole side wall machining in complex shapes can be realized without replacing electrodes between procedures. After the electrode is used for machining the straight-wall hole, a tool electrode does not need to be replaced, secondary centering is not needed, the auxiliary electrode units distributed on the side wall surface of the electrode are used as the electrode, the side wall of the hole can be directly machined, and the online programming control can be carried out on the internal shape of the machined variable-section hole on line by changing the power-on control of the auxiliary electrode units, so that the electrode can be used for machining various variable-section holes with different internal shapes, and the universality of the tool electrode is widened. According to the preparation method of the programmable silicon electrode for electrolytic machining, the electrode substrate, the detection unit and the insulating layer are obtained through etching and deposition processes, and the process is mature, so that the programmable silicon electrode has application potential of large-scale manufacturing.
Drawings
Fig. 1 is a schematic structural diagram of a programmable silicon electrode according to the present invention. In fig. 1, (a) is a schematic front view of a programmable silicon electrode, and (b) is a schematic back view of the programmable silicon electrode.
Fig. 2 is a schematic diagram of the programmable silicon electrode shown in fig. 1 with the conductive cell array and the external isolation layer removed, and in fig. 2, (a) is a partially enlarged view of an electrode processing portion (with the conductive cell array and the external isolation layer removed), and (b) is a schematic diagram of a front surface of the programmable silicon electrode (with the conductive cell array and the external isolation layer removed).
Fig. 3 is a partially enlarged view of a middle conductive cell array of the programmable silicon electrode shown in fig. 1, where in fig. 3, (a) is a partially enlarged view (partially cut away) of an electrode processing portion, and (b) is a schematic view of a surface structure of an intermediate isolation layer and a conductive pillar.
Fig. 4 is a cross-sectional view of an electrode machining portion and an electrode holding portion of the programmable silicon electrode shown in fig. 1, and in fig. 4, (a) is a schematic sectional view a-a of fig. 1, and (B) is a schematic sectional view B-B of fig. 1.
In fig. 1-4, 1 is a programmable silicon electrode, 2 is a heavily doped silicon substrate, and 3 is an insulating layer; 4 is an external isolation layer, 5 is an intermediate isolation layer, 6 is a conductive cell array, 7 is a connection line, 8 is a conductive lead-out array, 9 is an electrode power supply terminal, 10 is an electrode clamping portion, 11 is an electrode processing portion, 12 is a positioning groove, 13 is a conductive contact, 14 is a conductive column, 15 is a lead, and 16 is a terminal.
Fig. 5 is a schematic diagram of a process for making an electrode processing portion of the programmable silicon electrode shown in fig. 1.
In fig. 5, a is a single crystalline silicon material substrate, B is a middle isolation layer, C is a metal layer, D is an outer isolation layer, E is a partial etching window, F is a metal filler, G is a conductive unit 60, K1 is a front mask layer, K2 is a back mask layer, L is an etching window, M is a mask window, N is an insulating layer, 14 is a conductive pillar, 16 is a terminal, 60 is a conductive unit, and 4 is an outer isolation layer; 5 is an internal barrier layer; 3 is an insulating layer; and 11 is an electrode processing portion.
Fig. 6 is a schematic diagram of a process for making an electrode clamping portion in the programmable silicon electrode shown in fig. 1.
In fig. 6, a is a heavily doped silicon substrate, B is a middle isolation layer, C is a metal layer, D is an outer isolation layer, E is an etching window, F is a metal filler, H is a-conductive terminal 80, K1 is a front mask layer, K2 is a back mask layer, L is an etching window, M is a mask window, N is an insulating layer, 12 is a positioning groove, 16 is a conductive contact, 14 is a conductive post, 11 is an electrode processing portion, 12 is a positioning groove, 10 is an electrode holding portion, 3 is an insulating layer, 4 is an outer isolation layer, and 5 is an inner isolation layer.
Figure 7 is a schematic diagram of the use of a programmable silicon electrode of the present invention.
In fig. 7, 1 is a programmable silicon electrode, 17 is a special jig, 18 is a motor, 19 is a precision spindle, 20 is a conductive slip ring, 21 is an electrolyte, and 22 is a workpiece.
Figure 8 is a schematic diagram of several common variable cross-section holes processed using the programmable silicon electrode of the present invention.
Detailed Description
The invention provides a programmable silicon electrode for electrolytic processing and a preparation method thereof, which is characterized in that the programmable silicon electrode 1 consists of a heavily doped silicon substrate 2, an insulating layer 3, an external isolating layer 4, a middle isolating layer 5, a conductive unit array 6, a connecting wire 7, a conductive lead-out array 8 and an electrode power supply end 9; the heavily doped silicon substrate 2 is divided into an electrode clamping part 10 and an electrode processing part 11, a conductive leading-out array 8 and an electrode power supply end 9 are arranged on the front surface of the electrode clamping part 10, and a positioning groove 12 is arranged on the back surface of the electrode clamping part 10; the front surface of the electrode clamping part 10 and the front surface of the electrode processing part 11 are provided with middle isolation layers 5, connecting wires 7 are arranged on the middle isolation layers 5, the outer isolation layers 4 cover the connecting wires 7, the connecting wires 7 are used for connecting the conductive unit arrays 6 and the conductive leading-out arrays 8 and supplying power to the conductive unit arrays 6, and the middle isolation layers 5 are used for isolating the connecting wires 7, the conductive unit leading-out arrays 8 and the heavily doped silicon substrate 2; the conductive unit array 6 is located on an external isolation layer 4 on the surface 11 of the electrode processing part, the external isolation layer 4 is used for isolating a connecting wire 7 from electrolyte, the conductive unit array 6 is close to the tail end of the electrode processing part 11, the insulating layer 3 covers the side wall surface of the programmable silicon electrode, and the insulating layer 3 is used for isolating stray current between the side wall of the programmable silicon electrode 1 and a workpiece to be processed (the conductive leading-out array 8, the electrode power supply end 9, the side wall surface of the conductive unit array outside 6 and the front end surface of the programmable silicon electrode do not need to cover the insulating layer 3).
The connecting wire 7 in the programmable silicon electrode is composed of a conductive contact 13, a conductive column 14, a lead 15 and a terminal 16 (as shown in fig. 2, 3 and 4), wherein the conductive contact 13 is positioned on the intermediate isolation layer 5 on the surface of the electrode clamping part 10, and the terminal 16 is positioned on the intermediate isolation layer 5 on the surface of the electrode processing part 11; the lead 15 connects the conductive contact 13 and the terminal 16; conductive posts 14 are located inside the external isolation layer 4, and the conductive posts 14 are used for connecting the conductive unit 6 and the terminal 16, and the conductive terminals 80 and the conductive contacts 13.
As shown in fig. 1(a), the conductive unit array 6 in the programmable silicon electrode is located on the external isolation layer 4 on the surface of the electrode processing portion 11, the conductive unit array 6 is close to the end of the programmable silicon electrode 1, the conductive unit array 6 is composed of a plurality of conductive units 60 arranged in an array, the number of rows of the conductive units 60 is greater than 3, the number of columns of the conductive units 60 is greater than 3, and the conductive units 60 are connected to the conductive terminals 80 through the conductive pillars 14, the terminals 16, the leads 15 and the conductive contacts 13. As shown in fig. 3 (a).
The conductive elements 60 and conductive terminals 80 in the programmable silicon electrode are rectangular, oval or circular in shape.
In the conductive unit array 6 in the programmable silicon electrode, the conductive units are arranged in an array, and the conductive units are not connected and are in an electrical isolation state.
The heavily doped silicon substrate 2 in the programmable silicon electrode is made of good conductor material, and the conductivity range of the good conductor material is 10-2～10-3Omega cm, heavily doped silicon substrate 2 is highly doped N-type or P-type monocrystalline silicon, preferably N-type, with a doping concentration of 1019～1020/cm3。
The insulating layer, the outer isolation layer and the inner isolation layer in the programmable silicon electrode are made of silicon oxide, silicon nitride or silicon carbide.
The conductive unit array, the connecting line and the conductive leading-out array in the programmable silicon electrode are formed by a metal stripping process, the conductive unit array, the connecting line, the conductive leading-out array and the electrode power supply end are made of metal films, and the thickness and the width of each metal film are nano-scale and micron-scale.
The material of the metal thin film in the programmable silicon electrode can be platinum, silver or gold, and platinum is preferred.
The two different parts of the process of the method for preparing the programmable silicon electrode for electrolytic machining are respectively shown in fig. 5 and fig. 6, wherein fig. 5 is the preparation process of an electrode machining part 11 in the programmable silicon electrode, and fig. 6 is the preparation process of an electrode clamping part 10. The specific process is as follows:
(1) depositing a middle isolation layer B on the front surface of the heavily doped silicon substrate A to form a middle isolation layer 5 of the programmable silicon electrode; as shown in fig. 5(b) and 6 (b).
(2) Depositing a metal layer C on the middle isolation layer 5 in the step (1) to form a patterned metal layer, and obtaining a lead 15, a terminal 16 and a conductive contact 13 of the programmable silicon electrode; as shown in fig. 5(c) and 6 (c).
(3) Depositing an external isolation layer D on the metal layer in the step (2) to form an external isolation layer 4 of the programmable silicon electrode; as shown in fig. 5(d) and 6 (d).
(4) Etching the external isolation layer in the step (3), penetrating the external isolation layer to the metal layer, exposing the lead 15, the terminal 16 and the conductive contact 13, and forming a local etching window E; as shown in fig. 5(e) and 6 (e).
(5) Filling metal F in the local window in the step (4) to form a conductive column 14 of the programmable silicon electrode; as shown in fig. 5(f) and 6 (f).
(6) Depositing a metal layer G on the external isolation layer 4 in the step (5) to form a patterned metal layer, and obtaining a conductive unit array 6 and a conductive lead-out array 8 of the programmable silicon electrode; as shown in fig. 5(g) and 6 (g).
(7) Respectively depositing a mask layer K1 and a mask layer K2 on the front surface and the back surface of the substrate obtained in the step (6); as shown in fig. 5(h) and 6 (h).
(8) Etching a trapezoidal mask window L on the mask layer K2 on the lower surface of the electrode processing part base body in the step (7), carrying out wet etching on the monocrystalline silicon base body to obtain a back thinning window, and etching a positioning groove 12 on the mask layer K2 on the lower surface of the electrode clamping part base body in the step (7) as shown in fig. 5 (i); as shown in fig. 6 (i).
(9) Etching a mask window M on the mask layer and the isolation layer on the upper surface of the substrate in the step (8), and carrying out wet etching on the monocrystalline silicon substrate to obtain a basic outline of the electrode; as shown in fig. 5(j) and 6 (j).
(10) Depositing an insulating layer N on all the side surfaces and the reverse surface of the substrate in the step (9); as shown in fig. 5(k) and 6 (k).
(11) Etching the mask layer K1 on the front side of the monocrystalline silicon substrate in the step (10) to expose the conductive unit array, the conductive lead-out array and the surface of the local heavily doped silicon substrate; as shown in fig. 5(l) and 6 (l).
(12) And (4) splitting the monocrystalline silicon substrate in the step (10) according to the contour of the electrode to form the programmable silicon electrode. As shown in fig. 5(l) and 6 (m).
The programmable electrode and the method for manufacturing the same according to the present invention will be described in further detail with reference to the following detailed description and accompanying drawings.
The heavy doping silicon substrate 2 of the programmable electrode 1 consists of an electrode clamping part 10 and an electrode processing part 11, wherein the electrode clamping part 10 is used for accurately clamping and positioning the programmable silicon electrode 1, and the electrode processing part 11 is used as a tool cathode for electrolytic processing. The front surface of the electrode clamping part 10 is provided with a conductive leading-out array 8 and an electrode power supply end 9, and the back surface of the electrode clamping part 10 is provided with a positioning groove 12. The conductive lead-out array is located on the outer insulating layer of the surface of the electrode holding portion and near the other end of the electrode holding portion, and the surface of the electrode holding portion 10 is covered with the insulating layer 3 except for the surfaces of the conductive lead-out array 8 and the electrode power supply terminal 9, as shown in fig. 1 (b). The electrode power supply end 9 is directly connected with the heavily doped silicon substrate 2, and no insulating layer is arranged between the interface of the electrode power supply end and the heavily doped silicon substrate. The electrode machining portion 11 is a cantilever structure that protrudes from the electrode holding portion 10. The front surfaces of the electrode holding portion 10 and the electrode working portion 11 are provided with the intermediate insulating layer 5. The middle isolation layer 5 is provided with a connecting wire 7, and the connecting wire 7 is positioned between the middle isolation layer 5 and the outer isolation layer 4 and is used for connecting the conductive unit array 6 and the conductive leading-out array 8. The connection line 7 is covered with an outer insulation layer 4. The conductive element array 6 is located on the external isolation layer 4 on the surface of the electrode processing part 11, and near the end of the electrode processing part 11, the surface thereof is free of the insulating layer 3, and the rest of the surface of the electrode processing part 11 is covered with the insulating layer 3, as shown in fig. 1 (a). The connecting line 7 in the programmable electrode is composed of a conductive contact 13, a conductive column 14, a lead 15 and a terminal 16, and the conductive contact 13 is positioned on the intermediate isolation layer 5 on the surface of the electrode holding portion 10. The terminal 16 is located on the intermediate insulating layer 5 on the surface of the electrode-processed portion 11. The lead 15 connects the conductive contact 13 and the terminal 16, and the conductive post 14 is located inside the external isolation layer 4 and connects the conductive element 60 and the terminal 16, the conductive terminal 80 and the conductive contact 13, respectively, as shown in fig. 2. The conductive unit array 6 in the programmable electrode is positioned on the external isolation layer 4 on the surface of the electrode processing part 11 and is positioned close to the tail end of the electrode, the conductive unit array 6 is composed of a plurality of conductive units 60 which are arranged in an array, the row number of the conductive units 60 is more than 3, the column number of the conductive units 60 is more than 3, and the conductive units 60 which are arranged in a 5 × 5 mode are shown in the figure to form the conductive unit array 6; the conductive element 60 is finally connected to the conductive terminal 80 through the conductive post 14, the terminal 16, the lead 15, the conductive contact 13 and the conductive post 14. The conductive lead array 8 is composed of a plurality of conductive leads 80, the number of which is the same as the number of conductive elements 60. The shape of the conductive element 60 and the conductive terminals 80 may be selected to be rectangular, oval, circular, or the like.
In the embodiment of the preparation method, a deposition process is adopted to deposit an isolating layer B on a monocrystalline silicon material substrate A as an intermediate isolating layer 5, and the material is selected from silicon dioxide (SiO)2) The thickness is 10-500nm, preferably 200nm, the cross section of the electrode processing part is shown in FIG. 5(b) and the cross section of the electrode holding part is shown in FIG. 6 (b).
In the step (2) of the preparation method, the surface of the isolation layer B is subjected to single-side photoetching, the photoresist is used as a mask, a layer of metal film is deposited on the surface of the isolation layer B, the material can be platinum, silver and the like, preferably silver, and the deposition thickness is 10-200nm, preferably 100 nm. Removing the photoresist by lift-off process to obtain a patterned metal layer C (forming the conductive contact 13, the lead 15 and the terminal 16), the cross section of the electrode processing part is shown in FIG. 5(C) and the cross section of the electrode clamping part is shown in FIG. 6 (C);
in the step (3) of the preparation method, a deposition process is adopted to deposit an isolation layer D on the intermediate isolation layer B and the metal layer C to serve as an external isolation layer 4, and silicon dioxide (SiO) is selected as a material2) The thickness is 10-500nm, preferably 200nm, the cross section of the electrode processing part is shown in FIG. 5(d) and the cross section of the electrode holding part is shown in FIG. 6 (d).
In the step (4) of the preparation method, single-side photoetching is carried out on the surface of the isolation layer D, the photoresist is used as a mask, local etching is carried out on the surface of the isolation layer D, the external isolation layer D is etched through until the metal layer C is exposed, a local window is formed to obtain a graphical etching window E, the cross section of the electrode processing part is shown as a graph in fig. 5(E), and the cross section of the electrode clamping part is shown as a graph in fig. 6 (E);
in step (5) of the preparation method, the patterned etching window E is filled with a metal F, which is selected from copper or aluminum, preferably copper, as the conductive post 14, the filling method can be an electroforming method, the surface of the conductive post is trimmed, and the cross section of the electrode processing part is as shown in fig. 5(F) and the cross section of the electrode clamping part is as shown in fig. 6 (F);
in the step (6) of the preparation method, the surfaces of the isolation layer D and the filling metal F are subjected to single-side photoetching, a layer of metal film is deposited on the surfaces of the isolation layer D and the filling metal F by taking a photoresist as a mask, the material can be platinum, silver and the like, preferably silver, and the deposition thickness is 10-500nm, preferably 200 nm. Removing the photoresist by using a metal stripping process to obtain a patterned metal layer as a conductive unit array 7 and a conductive lead-out array 8, wherein the cross section of the electrode processing part is shown as figure 5(g) and the cross section of the electrode clamping part is shown as figure 6 (g);
in the step (7) of the preparation method, a layer of SiO is deposited on the front surface of the monocrystalline silicon material substrate A by adopting a deposition process2Depositing a layer of silicon nitride (Si)3N4) Finally, a front mask layer K1 is formed; then, a layer of SiO is deposited on the reverse surface of the monocrystalline silicon material substrate A by adopting a deposition process2Depositing a layer of Si3N4Finally, a back mask layer K2 is formed to prepare for subsequent etching process patterning. SiO 22Is deposited to a thickness of 50-400nm, preferably 300nm, Si3N4The deposition thickness of (a) is 50-400nm, preferably 200nm, the cross section of the electrode processing part is shown in FIG. 5(h) and the cross section of the electrode clamping part is shown in FIG. 6 (h);
in step (8) of the manufacturing method, the mask layer K2 on the back surface is subjected to one-time photolithography. And removing the exposed mask layer by adopting an etching process until the monocrystalline silicon material substrate A is exposed. Removing the glue, forming a mask outline of a thinning window and a positioning groove on a monocrystalline silicon material substrate A, placing the monocrystalline silicon material substrate A into corrosive liquid for etching, and strictly controlling the etching time to obtain a back thinning window L by etching, wherein the cross section of the electrode processing part is shown as a figure 5(i) and the cross section of the electrode clamping part is shown as a figure 6 (i).
In step (9) of the preparation method, the front mask layer K1 is subjected to one-time photolithography. And removing the exposed mask layer and the isolation layer by adopting an etching process until the monocrystalline silicon material substrate A is exposed. Removing the glue, forming the outline shape of a silicon electrode on a monocrystalline silicon material substrate A, placing the monocrystalline silicon material substrate A into corrosive liquid for etching, strictly controlling the etching time until the upper surface and the lower surface of the monocrystalline silicon material substrate A are intersected, wherein the cross section of a processing part of the electrode is as shown in figure 5(j) and the cross section of a clamping part of the electrode is as shown in figure 6 (j);
in the preparation steps (9) and (10), the adopted corrosive liquid component is KOH, and the concentration of the KOH is 20-50%, and the preferred concentration is 20%. The corrosion temperature is 50-100 ℃, preferably 80 ℃. A small amount of isopropyl alcohol (IPA) may be added in an appropriate amount, and the concentration thereof is less than 0.1-5%, preferably 1.5%. The etching solution component may also be TMAH, with a concentration of 10% to 40%, preferably 25%. The corrosion temperature is 50-100 ℃, preferably 80 ℃.
Depositing a layer of SiO on both sides and the reverse side of the silicon material substrate by chemical vapor deposition in step 10)2Depositing a layer of Si3N4Insulating layer N, insulating layer 3, SiO of silicon electrode2Is deposited to a thickness of 50-400nm, preferably 300nm, Si3N4Has a deposition thickness of 50-400nm, preferably 200nm, and has a cross section of an electrode processing part as shown in FIG. 5(k) and a cross section of an electrode holding part as shown in FIG. 6 (k);
locally processing the mask layer K1 by hydrofluoric acid or reactive ion etching in the step S11), exposing the surfaces of the conductive unit array 6, the conductive lead-out array 8 and the local heavily doped silicon substrate 2, wherein the cross section of the electrode processing part is shown as figure 5(l) and the cross section of the electrode clamping part is shown as figure 6 (l);
separating the prepared fine silicon electrode from the monocrystalline silicon material substrate A, wherein the splinting mode can be manual splinting and high-frequency pulse laser cutting splinting, and the final obtained processing and detecting integrated silicon electrode is shown in FIG. 5, wherein the cross section of the electrode processing part is shown in FIG. 5(m), and the cross section of the electrode clamping part is shown in FIG. 6(n)
The schematic diagram of the programmable silicon electrode for electrolytic processing prepared by the method of the invention applied to electrolytic processing is shown in fig. 7, wherein the programmable silicon electrode 1 is clamped on a special clamp 17 and rotates at high speed to form a columnar envelope surface, so that the same processing effect as the columnar electrode is achieved. The silicon electrode rotation is realized by the rotation of a precision spindle 19 and a conductive slip ring 20 driven by a motor 18. Further, 21 denotes an electrolyte, and 22 denotes a workpiece.
In the variable cross-section hole processing technology, firstly, the heavily doped silicon substrate 2 is taken as a tool cathode, each conductive unit 60 is not electrified, a straight-wall structure hole is processed, then, the electrode of the heavily doped silicon substrate 2 is powered off, and partial conductive units 60 in the conductive unit array 6 are taken as cathodes, material processing is carried out on the side wall of the hole, and variable cross-section holes in different shapes are obtained.
For the variable cross-section holes with different internal structure shapes, the electrified conductive units 60 in the conductive unit array 6 can be changed to control the internal structure of the holes in an online manner, and the internal structure of the processed variable cross-section holes can be edited by changing the electrifying/powering-off conditions of the conductive units at different positions. As shown in the figure, a plurality of common variable cross-section hole machining schematic diagrams 8 are listed, and fig. 8(a) is a schematic diagram of a drum-shaped hole machining process; FIG. 8(b) is a schematic view of a process for forming a bamboo joint-shaped hole; FIG. 8(c) is a schematic view of the processing of the gourd-shaped hole; FIG. 8(d) is a schematic view of the process for forming the funnel-shaped hole; fig. 8(e) is a schematic view of the process of machining the reverse tapered hole.
Claims (10)
1. A programmable silicon electrode for electrolytic processing and a preparation method thereof are characterized in that the programmable silicon electrode consists of a heavily doped silicon substrate, an insulating layer, an external isolating layer, a middle isolating layer, a conductive unit array, a connecting wire, a conductive leading-out array and an electrode power supply end; the heavily doped silicon substrate is divided into an electrode clamping part and an electrode processing part, the front surface of the electrode clamping part is provided with a conductive leading-out array and an electrode power supply end, and the back surface of the electrode clamping part is provided with a positioning groove; the front surface of the electrode clamping part and the front surface of the electrode processing part are provided with intermediate isolating layers, connecting wires are arranged on the intermediate isolating layers, external isolating layers cover the connecting wires, and the connecting wires are used for connecting the conductive unit array and the conductive leading-out array; the conductive unit array is positioned on the external isolation layer on the surface of the electrode processing part, and the insulating layer covers the side wall surface of the programmable silicon electrode.
2. The programmable silicon electrode of claim 1, wherein the connecting wire comprises a conductive contact, a conductive post, a lead and a terminal, the conductive contact is located on the intermediate insulating layer on the surface of the electrode holding portion, and the terminal is located on the intermediate insulating layer on the surface of the electrode processing portion; the lead wire is connected with the conductive contact and the terminal; the conductive column is located inside the external isolation layer and used for connecting the conductive unit and the terminal, and the conductive leading-out end and the conductive contact.
3. The programmable silicon electrode of claim 1, wherein the array of conductive elements is located on an external insulating layer on the surface of the machined portion of the electrode, the array of conductive elements is located near the distal end of the programmable silicon electrode, the array of conductive elements is formed by a plurality of conductive elements arranged in an array, the number of rows of conductive elements is greater than 3, the number of columns of conductive elements is greater than 3, and the conductive elements are connected to the conductive lead-out ends by conductive posts, terminals, leads, and conductive contacts.
4. The programmable silicon electrode of claim 1, wherein the conductive element 60 and the conductive tab 80 are rectangular, oval or circular in shape.
5. The programmable silicon electrode of claim 1, wherein the conductive elements of the array 6 are arranged in an array, and the conductive elements are electrically isolated from each other without connection.
6. The programmable silicon electrode of claim 1, wherein the heavily doped silicon substrate is made of a good conductor material having a conductivity in the range of 10-2～10-3Omega cm, heavily doped silicon substrate is N-type or P-type monocrystalline silicon doped at high concentration, preferably N-type, with doping concentration of 1019～1020/cm3。
7. The programmable silicon electrode of claim 1, wherein the insulating layer, the outer spacer and the inner spacer are made of silicon oxide, silicon nitride or silicon carbide.
8. The programmable silicon electrode of claim 1, wherein the array of conductive elements, the connecting lines, and the array of conductive leads are formed by a metal lift-off process, wherein the array of conductive elements, the connecting lines, the array of conductive leads, and the electrode power supply terminals are fabricated from a thin metal film, wherein the thin metal film has a thickness of the order of nanometers and a width of the order of micrometers.
9. The programmable silicon electrode of claim 1, wherein the metal film is made of platinum, silver or gold, preferably platinum.
10. A programmable silicon electrode for electrolytic processing and a method for making the same, the method comprising the steps of:
(1) depositing a middle isolation layer B on the front surface of the heavily doped silicon substrate A to form a middle isolation layer 5 of the programmable silicon electrode;
(2) depositing a metal layer C on the intermediate isolation layer in the step (1) to form a patterned metal layer, and obtaining a lead wire, a terminal and a conductive contact of the programmable silicon electrode;
(3) depositing an external isolation layer D on the metal layer in the step (2) to form an external isolation layer 4 of the programmable silicon electrode;
(4) etching the external isolation layer in the step (3), penetrating the external isolation layer to the metal layer, exposing the lead, the terminal and the conductive contact and forming a local etching window E;
(5) filling metal F in the local window in the step (4) to form a conductive column of the programmable silicon electrode;
(6) depositing a metal layer G on the external isolation layer in the step (5) to form a patterned metal layer, and obtaining a conductive unit array and a conductive lead-out array of the programmable silicon electrode;
(7) respectively depositing a mask layer K1 and a mask layer K2 on the front surface and the back surface of the substrate obtained in the step (6);
(8) etching a trapezoidal mask window L on the mask layer K2 on the lower surface of the electrode processing part base body in the step (7), carrying out wet etching on the monocrystalline silicon base body to obtain a back thinning window, and etching a positioning groove 12 on the mask layer K2 on the lower surface of the electrode clamping part base body in the step (7);
(9) etching a mask window M on the mask layer and the isolation layer on the upper surface of the substrate in the step (8), and carrying out wet etching on the monocrystalline silicon substrate to obtain a basic outline of the electrode;
(10) depositing an insulating layer N on all the side surfaces and the reverse surface of the substrate in the step (9);
(11) etching the mask layer K1 on the front side of the monocrystalline silicon substrate in the step (10) to expose the conductive unit array, the conductive lead-out array and the surface of the local heavily doped silicon substrate;
(12) and (4) splitting the monocrystalline silicon substrate in the step (10) according to the contour of the electrode to form the programmable silicon electrode.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115561154A (en) * | 2022-09-29 | 2023-01-03 | 中国石油化工股份有限公司 | A pipeline stray current detection device and testing method based on multiple coupled array electrodes |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6267868B1 (en) * | 1999-08-16 | 2001-07-31 | General Electric Company | Method and tool for electrochemical machining |
| US20020179573A1 (en) * | 2001-06-01 | 2002-12-05 | Gianchandani Yogesh B. | Micro-electro-discharge machining method and apparatus |
| US6586699B1 (en) * | 2002-02-20 | 2003-07-01 | Wisconsin Alumni Research Foundation | Micro-electro-discharge machining utilizing semiconductor electrodes |
| CN102554377A (en) * | 2010-12-23 | 2012-07-11 | 有研半导体材料股份有限公司 | Excircle cutting machining method and device for single crystal silicon rods |
| CN108817579A (en) * | 2018-07-09 | 2018-11-16 | 南京航空航天大学 | A kind of meander electrode fixture that the curved hole machined of monocrystalline silicon electric spark may be implemented |
| CN111136354A (en) * | 2019-12-31 | 2020-05-12 | 安徽工业大学 | Tool cathode for electrolytic machining of small grooves with variable cross-section and electrolytic machining method thereof |
| CN111805024A (en) * | 2020-06-12 | 2020-10-23 | 清华大学 | Processing and testing integrated silicon electrode and preparation method thereof |
-
2021
- 2021-06-01 CN CN202110606751.8A patent/CN114054872B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6267868B1 (en) * | 1999-08-16 | 2001-07-31 | General Electric Company | Method and tool for electrochemical machining |
| US20020179573A1 (en) * | 2001-06-01 | 2002-12-05 | Gianchandani Yogesh B. | Micro-electro-discharge machining method and apparatus |
| US6586699B1 (en) * | 2002-02-20 | 2003-07-01 | Wisconsin Alumni Research Foundation | Micro-electro-discharge machining utilizing semiconductor electrodes |
| CN102554377A (en) * | 2010-12-23 | 2012-07-11 | 有研半导体材料股份有限公司 | Excircle cutting machining method and device for single crystal silicon rods |
| CN108817579A (en) * | 2018-07-09 | 2018-11-16 | 南京航空航天大学 | A kind of meander electrode fixture that the curved hole machined of monocrystalline silicon electric spark may be implemented |
| CN111136354A (en) * | 2019-12-31 | 2020-05-12 | 安徽工业大学 | Tool cathode for electrolytic machining of small grooves with variable cross-section and electrolytic machining method thereof |
| CN111805024A (en) * | 2020-06-12 | 2020-10-23 | 清华大学 | Processing and testing integrated silicon electrode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 刘国栋等: "微细硅工具电极的制备及其微细电解加工实验", 《电加工与模具》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115561154A (en) * | 2022-09-29 | 2023-01-03 | 中国石油化工股份有限公司 | A pipeline stray current detection device and testing method based on multiple coupled array electrodes |
| CN115561154B (en) * | 2022-09-29 | 2025-01-07 | 中国石油化工股份有限公司 | Pipeline stray current detection device and test method based on multiple coupling array electrodes |
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