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CN114039592A - High-voltage, high-speed and low-power-consumption level conversion circuit and switch driving circuit - Google Patents

High-voltage, high-speed and low-power-consumption level conversion circuit and switch driving circuit Download PDF

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Publication number
CN114039592A
CN114039592A CN202111291919.7A CN202111291919A CN114039592A CN 114039592 A CN114039592 A CN 114039592A CN 202111291919 A CN202111291919 A CN 202111291919A CN 114039592 A CN114039592 A CN 114039592A
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China
Prior art keywords
transistor
level conversion
triode
resistor
voltage
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CN202111291919.7A
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Chinese (zh)
Inventor
李海国
潘俭斌
钟兴伦
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Guangdong Quanpu Technology Co ltd
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Guangdong Quanpu Technology Co ltd
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Priority to CN202111291919.7A priority Critical patent/CN114039592A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

The invention provides a high-voltage high-speed low-power consumption level conversion circuit and a switch driving circuit; the level conversion circuit comprises a level conversion body module and a constant current source module; the level conversion body module is connected with the signal input end and the signal output end; the constant current source module comprises a triode Q2, a triode Q3, a diode D1 and a resistor R2; the triode Q2 and the triode Q3 are PNP triodes respectively; an external power supply VCC is connected with an emitter of a triode Q3 through a resistor R2, and a collector of the triode Q3 is connected with the level conversion body module; an external power supply VCC is connected with an emitter of a triode Q2 through a diode D1, and the emitter and a collector of the triode Q2 are connected; the base of the transistor Q2 is connected to the base of the transistor Q3 and to ground through a resistor R3. The level conversion circuit can reduce power consumption and save resource consumption.

Description

High-voltage, high-speed and low-power-consumption level conversion circuit and switch driving circuit
Technical Field
The invention relates to the technical field of level conversion, in particular to a high-voltage high-speed low-power-consumption level conversion circuit and a switch driving circuit.
Background
In some control circuit applications, the load needs to be driven by a high-speed high-voltage switch, for example, a driving voltage of 30V or more is needed. While a general microcontroller can only output 5V or 3.3V voltage and needs level conversion. Few high-speed level conversion chips supporting more than 30V are available in the market, and high-speed level conversion is generally built by using discrete devices, and a circuit is shown in FIG. 1. If high-speed switch switching is required, the resistance value of the resistor R1 must be smaller; but the resistance of the resistor R1 is smaller, the power consumption of the circuit is increased; particularly, when the external power source VCC is relatively high, the power consumption of the circuit may be high, and the disadvantage of the high-speed level shift is more significant.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a high-voltage, high-speed and low-power consumption level conversion circuit and a switch driving circuit; the level conversion circuit can reduce power consumption and save resource consumption.
In order to achieve the purpose, the invention is realized by the following technical scheme: a high-voltage high-speed low-power consumption level switching circuit comprises a level switching body module for performing level switching on an input signal and a constant current source module for providing constant current for the level switching body module; the level conversion body module is connected with the signal input end and the signal output end;
the constant current source module comprises a triode Q2, a triode Q3, a diode D1 and a resistor R2; the triode Q2 and the triode Q3 are PNP triodes respectively; an external power supply VCC is connected with an emitter of a triode Q3 through a resistor R2, and a collector of the triode Q3 is connected with the level conversion body module; an external power supply VCC is connected with an emitter of a triode Q2 through a diode D1, and the emitter and a collector of the triode Q2 are connected; the base electrode of the triode Q2 is connected with the base electrode of the triode Q3 and is grounded through a resistor R3; the resistor R3 is connected in parallel with a capacitor C1.
In the above scheme, when the base voltages of the transistor Q2 and the transistor Q3 are the same, the emitter voltages of the transistor Q2 and the transistor Q3 are also substantially the same, the voltage drop across the resistor R2 is equal to the voltage drop across the diode D1, and the current I flowing through the resistor R2 is equal to the voltage across the diode D1/the resistance across the resistor R2. The current flowing through the resistor R2 is generally between several milliamperes and ten or more milliamperes, and the higher the current flowing, the faster the rise speed of the output voltage. Through experimental tests, under the voltage of 30V, if the time for the output voltage to rise from 0V to 30V is required to be within 200ns, the conventional level shift circuit (as shown in FIG. 1) needs the resistor R1 to be below 300 Ω, and the power consumption of the circuit is as high as more than 2.6W. The quiescent current of the resistor R2 of the level switching circuit is 10 milliamperes, so that the same rise time can be achieved, and the power consumption of the whole circuit is only about 0.4W by adding the loss of the diode Q2 and the loss of the diode Q5. The circuit has the advantages of obvious energy consumption saving, and the advantages of less power consumption of the circuit are more obvious as the conversion voltage is higher and the voltage of the external power supply VCC is higher.
Preferably, the transistor Q2 and the transistor Q3 are PNP transistors of the same type.
In one scheme, the level conversion body module comprises an N-type field effect transistor Q5 and a resistor R5; the grid electrode of the N-type field effect transistor Q5 is connected with the signal input end; the drain electrode of the N-type field effect transistor Q5 is connected with the constant current source module and is connected with the signal output end; the grid and the source of the N-type field effect transistor Q5 are connected through a resistor R5, and the source of the N-type field effect transistor Q5 is grounded.
The level conversion body module comprises a triode Q6 and a resistor R6; the triode Q6 is an NPN triode; the base electrode of the triode Q6 is connected with the signal input end through a resistor R6; the collector of the triode Q6 is connected with the constant current source module and the signal output end; the emitter of transistor Q6 is connected to ground.
Preferably, the level conversion body module is connected with the signal output end through a push-pull output module; the circuit loading capability can be enhanced.
Preferably, the push-pull output module comprises an NPN transistor Q1 and a PNP transistor Q4; the triode Q1 is an NPN triode, and the triode Q4 is a PNP triode; the base electrode of the triode Q1 is connected with the base electrode of the triode Q4 and is connected with the level conversion body module; an external power supply VCC is connected with the collector of the triode Q1; the emitter of the triode Q1 is connected with the emitter of the triode Q4 and is connected with the signal output end; the collector of transistor Q4 is connected to ground.
A switch driving circuit comprises the high-voltage high-speed low-power consumption level conversion circuit.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. compared with the existing level conversion circuit, the level conversion circuit can reduce power consumption and save resource consumption under the condition of meeting the same rise time;
2. the level switching circuit adopts push-pull output, so that the loading capacity can be enhanced;
3. the level conversion circuit has good high-speed response performance.
Drawings
FIG. 1 is a schematic diagram of a prior art level shifting circuit;
FIG. 2 is a schematic diagram of a high voltage, high speed, low power level shifter circuit according to an embodiment;
FIG. 3(a) is a waveform diagram of an output signal of a conventional level shift circuit;
FIG. 3(b) is a waveform diagram of an output signal of the high-voltage, high-speed and low-power level shifter according to the embodiment;
FIG. 4 is a schematic diagram of a high-voltage, high-speed, low-power level shifter circuit according to a second embodiment.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Example one
As shown in fig. 2, the high-voltage, high-speed, and low-power consumption level shift circuit of the present embodiment includes a level shift body module for performing level shift on an input signal, a constant current source module for providing a constant current to the level shift body module, and a push-pull output module for outputting a signal after level shift.
The constant current source module comprises a triode Q2, a triode Q3, a diode D1 and a resistor R2; the triode Q2 and the triode Q3 are PNP triodes respectively; an external power supply VCC is connected with an emitter of a triode Q3 through a resistor R2, and a collector of the triode Q3 is connected with the level conversion body module; an external power supply VCC is connected with an emitter of a triode Q2 through a diode D1, and the emitter and a collector of the triode Q2 are connected; the base electrode of the triode Q2 is connected with the base electrode of the triode Q3 and is grounded through a resistor R3; the resistor R3 is connected in parallel with a capacitor C1.
The level conversion body module comprises an N-type field effect transistor Q5 and a resistor R5; the grid electrode of the N-type field effect transistor Q5 is connected with the signal input end IN; the drain electrode of the N-type field effect transistor Q5 is connected with the constant current source module and the push-pull output module; the grid and the source of the N-type field effect transistor Q5 are connected through a resistor R5, and the source of the N-type field effect transistor Q5 is grounded.
The push-pull output module comprises an NPN triode Q1 and a PNP triode Q4; the triode Q1 is an NPN triode, and the triode Q4 is a PNP triode; the base electrode of the triode Q1 is connected with the base electrode of the triode Q4 and is connected with the level conversion body module; an external power supply VCC is connected with the collector of the triode Q1; the emitter of the triode Q1 is connected with the emitter of the triode Q4 and is connected with the signal output end OUT; the collector of transistor Q4 is connected to ground.
The triode Q2, the triode Q3, the diode D1, the resistor R2, the resistor R3 and the capacitor C1 form a constant current source module; the base voltages of the transistor Q2 and the transistor Q3 are the same, the emitter voltages of the transistor Q2 and the transistor Q3 are substantially the same, and the voltage drop across the resistor R2 is equal to the voltage drop across the diode D1. The current I flowing through the resistor R2 equals the voltage of the diode D1/the resistance of the resistor R2; in order to improve the accuracy of the constant current, the transistor Q2 and the transistor Q3 are preferably the same type of transistor.
The triode Q1 and the triode Q4 form a push-pull output, and the loading capacity of the circuit is enhanced. If the current required by the load is small, the push-pull output can be removed and output by the drain electrode of the N-type field effect transistor Q5.
The current flowing through the resistor R2 is generally between several milliamperes and ten or more milliamperes, and the higher the current flowing, the faster the rise speed of the output voltage. Through experimental tests, under the voltage of 30V, if the time for the output voltage to rise from 0V to 30V is required to be within 200ns, the conventional level shift circuit (as shown in FIG. 1) needs the resistor R1 to be below 300 Ω, and the power consumption of the circuit is as high as more than 2.6W. The quiescent current of the resistor R2 of the level shift circuit of this embodiment is 10 milliamperes, so that the same rise time can be achieved. The power consumption of the whole circuit is only about 0.4W by adding the loss of the diode Q2 and the diode Q5. The circuit has obvious advantages, and the advantages of low power consumption are more obvious when the conversion voltage is higher and the voltage of the external power supply VCC is higher.
When the input signal is a square wave, an oscilloscope is adopted to collect the output signal: the waveform of the output signal of the conventional level shifter is shown in fig. 3(a), and the waveform of the output signal of the level shifter according to the first embodiment is shown in fig. 3 (b). By contrast, the high-speed response performance of the level shift circuit of the embodiment is superior to that of the conventional level shift circuit.
The embodiment also provides a switch driving circuit, which comprises the high-voltage high-speed low-power consumption level conversion circuit. The high-voltage high-speed low-power consumption level conversion circuit can be connected to an IO port of a microcontroller so as to realize high-voltage driving signal output.
Example two
The present embodiment is a high-voltage, high-speed, low-power consumption level shift circuit, which is different from the first embodiment in that: in this embodiment, as shown in fig. 4, the level shift body module includes a transistor Q6 and a resistor R6; the triode Q6 is an NPN triode; the base electrode of the triode Q6 is connected with the signal input end through a resistor R6; the collector of the triode Q6 is connected with the constant current source module and the push-pull output module; the emitter of transistor Q6 is connected to ground.
The rest of the structure of the present embodiment is the same as that of the first embodiment.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (7)

1.一种高压高速低功耗电平转换电路，其特征在于：包括用于将输入信号进行电平转换的电平转换本体模块和用于为电平转换本体模块提供恒定电流的恒流源模块；电平转换本体模块与信号输入端连接，并与信号输出端连接；1. a high-voltage, high-speed, low-power level conversion circuit, characterized in that: comprising a level conversion body module for level conversion of an input signal and a constant current source for providing a constant current for the level conversion body module module; the level conversion body module is connected with the signal input end, and is connected with the signal output end; 所述恒流源模块包括三极管Q2、三极管Q3、二极管D1和电阻R2；三极管Q2和三极管Q3分别为PNP三极管；外部电源VCC通过电阻R2与三极管Q3的发射极连接，三极管Q3的集电极与电平转换本体模块连接；外部电源VCC通过二极管D1与三极管Q2的发射极连接，三极管Q2的发射极和集电极连接；三极管Q2的基极与三极管Q3的基极连接，并通过电阻R3接地；电阻R3并联有电容C1。The constant current source module includes a transistor Q2, a transistor Q3, a diode D1 and a resistor R2; the transistor Q2 and the transistor Q3 are PNP transistors respectively; the external power supply VCC is connected to the emitter of the transistor Q3 through the resistor R2, and the collector of the transistor Q3 is connected to the power supply. The flat conversion body module is connected; the external power supply VCC is connected to the emitter of the transistor Q2 through the diode D1, and the emitter and collector of the transistor Q2 are connected; the base of the transistor Q2 is connected to the base of the transistor Q3, and is grounded through the resistor R3; the resistor R3 is connected in parallel with capacitor C1. 2.根据权利要求1所述的高压高速低功耗电平转换电路，其特征在于：所述三极管Q2和三极管Q3采用相同型号的PNP三极管。2 . The high-voltage, high-speed, low-power-consumption level conversion circuit according to claim 1 , wherein the transistor Q2 and the transistor Q3 are PNP transistors of the same type. 3 . 3.根据权利要求1所述的高压高速低功耗电平转换电路，其特征在于：所述电平转换本体模块包括N型场效应管Q5和电阻R5；N型场效应管Q5的栅极与信号输入端连接；N型场效应管Q5的漏极与恒流源模块连接，并与信号输出端连接；N型场效应管Q5的栅极和源极之间通过电阻R5连接，N型场效应管Q5的源极接地。3. The high-voltage, high-speed, low-power level conversion circuit according to claim 1, wherein the level conversion body module comprises an N-type field effect transistor Q5 and a resistor R5; the gate of the N-type field effect transistor Q5 It is connected with the signal input terminal; the drain of the N-type FET Q5 is connected with the constant current source module, and is connected with the signal output terminal; the gate and the source of the N-type FET Q5 are connected through the resistor R5, and the N-type The source of the field effect transistor Q5 is grounded. 4.根据权利要求1所述的高压高速低功耗电平转换电路，其特征在于：所述电平转换本体模块包括三极管Q6和电阻R6；三极管Q6为NPN三极管；三极管Q6的基极通过电阻R6与信号输入端连接；三极管Q6的集电极与恒流源模块连接，并与信号输出端连接；三极管Q6的发射极接地。4. The high-voltage, high-speed, low-power level conversion circuit according to claim 1, wherein the level conversion body module comprises a transistor Q6 and a resistor R6; the transistor Q6 is an NPN transistor; the base of the transistor Q6 passes through the resistor R6 is connected to the signal input terminal; the collector of the transistor Q6 is connected to the constant current source module and is connected to the signal output terminal; the emitter of the transistor Q6 is grounded. 5.根据权利要求1所述的高压高速低功耗电平转换电路，其特征在于：所述电平转换本体模块通过推挽输出模块与信号输出端连接。5 . The high-voltage, high-speed, low-power-consumption level shift circuit according to claim 1 , wherein the level shift body module is connected to the signal output terminal through a push-pull output module. 6 . 6.根据权利要求5所述的高压高速低功耗电平转换电路，其特征在于：所述推挽输出模块包括NPN三极管Q1和PNP三极管Q4；三极管Q1为NPN三极管，三极管Q4为PNP三极管；三极管Q1的基极和三极管Q4的基极相连，并与电平转换本体模块连接；外部电源VCC与三极管Q1的集电极连接；三极管Q1的发射极与三极管Q4的发射极连接，并与信号输出端连接；三极管Q4的集电极接地。6. The high-voltage high-speed low-power level conversion circuit according to claim 5, wherein the push-pull output module comprises an NPN triode Q1 and a PNP triode Q4; the triode Q1 is an NPN triode, and the triode Q4 is a PNP triode; The base of the transistor Q1 is connected to the base of the transistor Q4, and is connected to the level conversion body module; the external power supply VCC is connected to the collector of the transistor Q1; the emitter of the transistor Q1 is connected to the emitter of the transistor Q4, and with the signal output The terminal is connected; the collector of the transistor Q4 is grounded. 7.一种开关驱动电路，其特征在于：包括权利要求1至6中任一项所述的高压高速低功耗电平转换电路。7 . A switch driving circuit, characterized in that it comprises the high-voltage, high-speed, low-power level conversion circuit according to any one of claims 1 to 6 . 8 .
CN202111291919.7A 2021-11-03 2021-11-03 High-voltage, high-speed and low-power-consumption level conversion circuit and switch driving circuit Pending CN114039592A (en)

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US20050062508A1 (en) * 2003-09-22 2005-03-24 Nec Electronics Corporation Driver circuit
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