CN114012597A - Silicon carbide grinding device and method - Google Patents
Silicon carbide grinding device and method Download PDFInfo
- Publication number
- CN114012597A CN114012597A CN202111448410.9A CN202111448410A CN114012597A CN 114012597 A CN114012597 A CN 114012597A CN 202111448410 A CN202111448410 A CN 202111448410A CN 114012597 A CN114012597 A CN 114012597A
- Authority
- CN
- China
- Prior art keywords
- grinding
- cleaning
- disc
- silicon carbide
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000227 grinding Methods 0.000 title claims abstract description 112
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 66
- 238000001816 cooling Methods 0.000 claims abstract description 56
- 238000001179 sorption measurement Methods 0.000 claims abstract description 25
- 238000001035 drying Methods 0.000 claims abstract description 11
- 239000000498 cooling water Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 8
- 239000002699 waste material Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 30
- 239000007788 liquid Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of chemical mechanical polishing, in particular to a silicon carbide polishing device and a silicon carbide polishing method, wherein the polishing device comprises: a work table; the rotating table is arranged on the workbench; the grinding disc is arranged on the rotating table; the adsorption disc is arranged on the grinding disc; the first cleaning and cooling device is arranged on the workbench and used for cleaning and cooling a grinding area of a contact part of the grinding disc and the vacuum adsorption disc; the first cleaning and drying device can be movably prevented from being arranged on the workbench so as to clean and dry the back surface of the ground wafer. The first cleaning device effectively enhances the cleaning and cooling effects of the grinding area, reduces the waste of water resources and realizes cleaning while grinding the silicon carbide wafer.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to a silicon carbide polishing device and method.
Background
In the fabrication of silicon carbide substrates, Chemical Mechanical Polishing (CMP) equipment is often used to planarize the wafer surface. In the CMP apparatus, when a planarization process is performed, a wafer is chemically and mechanically polished (i.e., planarized) by supplying a polishing liquid onto a polishing pad, and contacting the wafer with the surface of the polishing pad by the pressure of the polishing head, through the interaction between the wafer polishing liquid and the polishing pad.
The existing silicon carbide wafer grinding component can not be cleaned while grinding the wafer, and in addition, cooling water is sprayed out from the edge of the grinding disc during the grinding process to cool the grinding area and take away powder generated by grinding. Since the area of the wafer actually contacting the grinding disc is one fourth of the area of the grinding disc, but the discharge holes for the cooling water are uniformly distributed on the grinding disc, the remaining three fourths of the wafers cannot be effectively cooled, and water resources are wasted. In addition, since a large amount of silicon carbide powder and polishing pad falling objects are generated in the wafer polishing process, when the wafer polishing member is not cleaned in time, the generated silicon carbide powder and polishing pad falling objects are easy to generate scratches on the wafer surface, and the damage of the wafer is increased. The grinding quality of the wafer is reduced. In addition, the grinding device can accelerate the discharge of grinding waste liquid and is beneficial to the release of heat generated during grinding through the design of the rotating device and the grinding disc groove. Further preventing the wafer from cracking due to frictional heat generation.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a polishing apparatus and a polishing method. The technical problem to be solved by the invention is realized by the following technical scheme;
the invention provides a grinding device, comprising;
a work table;
the rotating table is fixedly arranged on the workbench;
the grinding disc is connected to the rotating table through threads;
the vacuum adsorption disc is arranged above the grinding disc;
the first cleaning and cooling device is arranged on the workbench and used for cleaning and cooling a grinding area where the grinding disc and the vacuum adsorption disc are in contact;
and the first cleaning and drying device is fixedly arranged on the workbench and is used for cleaning and drying the wafer ground by the vacuum adsorption disc on the grinding disc.
In an embodiment of the invention, the vacuum adsorption disc cleaning and cooling device further comprises a second cleaning and cooling device which is arranged above the vacuum adsorption disc and used for cleaning and cooling the vacuum adsorption disc.
In one embodiment of the invention, the turntable is further provided with a baffle member, and the two vacuum suction cups are symmetrically arranged around the baffle member.
In one embodiment of the invention, the polishing device further comprises a third cleaning and cooling device which is arranged in the non-contact area of the vacuum adsorption disc and the grinding disc for cleaning and cooling.
In one embodiment of the invention, the device further comprises a rotating table and a grinding disc which are connected through screws.
In one embodiment of the invention, the grinding disc is designed by adopting a thread groove.
The invention provides a grinding mill comprising the grinding apparatus of any one of the above embodiments.
The invention provides a grinding method, which adopts the grinding machine in the embodiment to grind and comprises the following steps;
loading a silicon carbide wafer on an adsorption plate;
controlling the grinding disc to grind the adsorption disc loaded with the silicon carbide wafer, and opening the first cleaning and cooling device and the second cleaning and cooling device to clean and cool the ground silicon carbide wafer;
after grinding is finished, controlling the first cleaning and cooling device to rinse the back surface of the silicon carbide wafer;
and after the cleaning is finished, opening the first cleaning and drying device, and controlling the first cleaning and drying device to continuously dry above the wafer until the wafer has no cooling water.
Compared with the prior art, the invention has the advantages that;
1. the first cleaning and cooling device arranged on the grinding device is specially used for cleaning and cooling the grinding area, so that grinding powder is easier to discharge, the cooling effect is enhanced, the waste of water resources is reduced, and the wafer is cleaned and cooled while being ground;
2. the second cleaning and cooling device arranged in the grinding device is specially used for enhancing the cooling effect of the grinding area and preventing the wafer from cracking caused by overhigh local temperature;
3. the third cleaning and cooling device arranged on the grinding device is specially used for cleaning and cooling effects of a non-grinding area, so that the grinding pad can be washed in the grinding process, the grinding powder on the grinding pad is prevented from scratching a wafer, the appearance of a product is better, the grinding quality is greatly improved, and the service life of the grinding pad is prolonged;
4. the grinding pad designed by the spiral groove arranged on the grinding device can accelerate the discharge of the grinding waste liquid in the grinding process, prevent the grinding powder generated in the grinding process from causing secondary scratches on the wafer and enhance the cleaning and cooling effects.
Drawings
FIG. 1 is a schematic structural diagram of a polishing apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a cleaning and cooling device according to an embodiment of the present invention;
fig. 3 is a schematic side view of a polishing pad according to an embodiment of the invention.
In the figure: 1-a vacuum adsorption disc, 2-a grinding disc, 3-a rotating table and 4-a workbench; 101-gear lever; 5-a first cleaning and cooling device, 6-a second cleaning and cooling device and 7-a third cleaning and cooling device.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of a structure of a grinding apparatus including a rotary table 3 and a work table 4; the rotating table 3 is integrally arranged at the center of the workbench 4; a stop lever 101 is fixedly arranged on the workbench 4; the rotating table 3 is connected with the grinding disc 2 through threads; the baffle rod 101 and the grinding disc 2 form an included angle which is used for placing the vacuum adsorption disc 1; the rotary table 3 is driven by driving means (not shown in the figures) during the grinding; the rotating table 3 rotates to drive the grinding disc 2 to rotate; the area where the suction disc and the grinding disc are in contact is called a grinding area, and the area where the suction disc and the grinding disc are not in contact is called a non-grinding area.
Fig. 2 is a schematic structural diagram of the cleaning and cooling device, which includes a first cleaning and cooling device 5, a second cleaning and cooling device 6, and a third cleaning and cooling device 7.
The first cleaning and cooling device 5 is positioned right above the grinding area.
And the second cleaning and cooling device 6 is positioned right above the center of the grinding adsorption disc.
And the third cleaning and cooling device 7 is positioned right above the non-grinding area.
Fig. 3 is a side view structure diagram of a grinding pad, the grinding pad adopts a spiral groove design to facilitate the discharge effect of the grinding waste liquid, the discharge of the grinding waste liquid can be accelerated in the grinding process, the secondary scratch to the wafer caused by the grinding powder generated in the grinding process is prevented, and the cleaning and cooling effect is enhanced simultaneously.
During grinding, the first cleaning and cooling device 1, the second cleaning and cooling device 2 and the third cleaning and cooling device 3 are opened simultaneously, and the first cleaning and cooling device 1 is used for cleaning and cooling a grinding area; the second cleaning and cooling device 2 is used for enhancing the cooling effect on the grinding area and preventing the wafer from cracking caused by local temperature rise due to grinding during grinding; the third washs the heat sink and is used for washing the grinding pad, prevents that the abrasive powder on the grinding pad from causing the fish tail to the wafer for the outward appearance of product is better, very big promotion the quality of grinding, has increased the life of grinding pad simultaneously.
After grinding, closing the first cleaning and cooling device and the second cleaning and cooling device, washing the wafer with the vacuum adsorption disc by using the third cleaning and cooling device, and opening the first cleaning and drying device to clean and dry the wafer after washing.
Claims (10)
1. An apparatus for grinding silicon carbide, comprising: a table (1);
the rotating platform (2) is fixedly arranged on the workbench (1);
the grinding disc (3) is connected to the rotating table (2) through threads;
the vacuum adsorption disc (4) is arranged above the grinding disc (3);
the first cleaning and cooling device (5) is arranged on the workbench (1) and is used for cleaning and cooling a grinding area where the grinding disc (3) and the vacuum adsorption disc (4) are in contact;
the second cleaning and cooling device (7) is arranged right above the vacuum adsorption disc;
the third cleaning and cooling device (8) is arranged in the non-contact area of the vacuum adsorption disc (4) and the grinding disc (3);
and the first cleaning and drying device (6) is fixedly arranged on the workbench and is used for cleaning and drying the wafer ground on the grinding disc by the vacuum adsorption disc.
2. The silicon carbide grinding device according to claim 1, wherein the second cleaning and cooling device (7) is arranged right above the vacuum adsorption disc to clean and cool the vacuum adsorption disc (4).
3. The silicon carbide grinding device according to claim 1, wherein the third cleaning and cooling device (8) is arranged in a non-contact area of the vacuum adsorption disc (4) and the grinding disc (3) for cleaning and cooling.
4. A silicon carbide grinding apparatus according to claim 1, characterized in that the grinding disc (3) is of a threaded groove design.
5. A silicon carbide grinding apparatus according to claim 1, wherein the rotary table (2) and the grinding disc (3) are screwed together.
6. An apparatus for grinding silicon carbide according to claim 1, wherein the rotation direction of the rotary table (2) is clockwise.
7. An apparatus for grinding silicon carbide according to claim 2, wherein a stop member (101) is provided on the rotary table (2), and the two vacuum chucks (3) are symmetrically provided with respect to the stop member (101).
8. A grinding mill characterized by comprising the grinding device according to any one of claims 1 to 7.
9. A silicon carbide grinding method, characterized in that grinding is performed by the grinder according to claim 8, the method comprising: loading a silicon carbide wafer on an adsorption plate; controlling the grinding disc to grind the adsorption disc loaded with the silicon carbide wafer, and opening the first cleaning and cooling device and the second cleaning and cooling device to clean and cool the ground silicon carbide wafer; after grinding is finished, controlling the first cleaning and cooling device to rinse the back surface of the silicon carbide wafer; and after the cleaning is finished, opening the first cleaning and drying device, and controlling the first cleaning and drying device to continuously dry above the wafer until the wafer has no cooling water.
10. The silicon carbide grinding method according to claim 9, wherein after the previous wafer is ground, cleaned and dried, the first cleaning and cooling device, the second cleaning and cooling device and the first cooling and drying device are opened to clean and dry the grinding disc, so as to prevent the silicon carbide powder left after the previous wafer is ground and the falling objects of the grinding disc from affecting the grinding of the next wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111448410.9A CN114012597A (en) | 2021-12-01 | 2021-12-01 | Silicon carbide grinding device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111448410.9A CN114012597A (en) | 2021-12-01 | 2021-12-01 | Silicon carbide grinding device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114012597A true CN114012597A (en) | 2022-02-08 |
Family
ID=80067255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111448410.9A Pending CN114012597A (en) | 2021-12-01 | 2021-12-01 | Silicon carbide grinding device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114012597A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102601719A (en) * | 2011-01-20 | 2012-07-25 | 株式会社荏原制作所 | Polishing method and polishing apparatus |
| TW201431913A (en) * | 2013-02-08 | 2014-08-16 | Taiwan Semiconductor Mfg | Conductive chemical mechanical planarization polishing pad |
| JP2017007013A (en) * | 2015-06-19 | 2017-01-12 | 信越半導体株式会社 | Chamfering method and chamfering device |
| CN109159020A (en) * | 2018-10-26 | 2019-01-08 | 长江存储科技有限责任公司 | Grinding device |
| CN112518573A (en) * | 2020-11-06 | 2021-03-19 | 西安奕斯伟硅片技术有限公司 | Polishing apparatus, polishing machine, and polishing method |
-
2021
- 2021-12-01 CN CN202111448410.9A patent/CN114012597A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102601719A (en) * | 2011-01-20 | 2012-07-25 | 株式会社荏原制作所 | Polishing method and polishing apparatus |
| TW201431913A (en) * | 2013-02-08 | 2014-08-16 | Taiwan Semiconductor Mfg | Conductive chemical mechanical planarization polishing pad |
| JP2017007013A (en) * | 2015-06-19 | 2017-01-12 | 信越半導体株式会社 | Chamfering method and chamfering device |
| CN109159020A (en) * | 2018-10-26 | 2019-01-08 | 长江存储科技有限责任公司 | Grinding device |
| CN112518573A (en) * | 2020-11-06 | 2021-03-19 | 西安奕斯伟硅片技术有限公司 | Polishing apparatus, polishing machine, and polishing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100315722B1 (en) | Polishing machine for flattening substrate surface | |
| JP3231659B2 (en) | Automatic polishing equipment | |
| TW201622040A (en) | Substrate processing apparatus and processing method | |
| KR19990045185A (en) | Polishing device and polishing method | |
| CN112518573B (en) | Polishing apparatus, polishing machine, and polishing method | |
| TWI790282B (en) | Substrate processing device, substrate processing method, and storage medium | |
| JP2014203906A (en) | Substrate processing method | |
| JP6345988B2 (en) | Substrate processing equipment | |
| JP6468037B2 (en) | Polishing equipment | |
| KR20160042786A (en) | Buffing apparatus and substrate processing device | |
| CN105364699B (en) | Chemical mechanical polishing method and chemical mechanical polishing equipment | |
| CN114932500B (en) | Grinding and polishing integrated device and operation method thereof | |
| JP2005501411A (en) | Polishing and scrubbing at a constant pH | |
| US6827633B2 (en) | Polishing method | |
| CN114012597A (en) | Silicon carbide grinding device and method | |
| KR20150022363A (en) | Chemical mechanical polishing system and method thereof | |
| CN210499749U (en) | Chemical mechanical polishing device | |
| JP2016111265A (en) | Buff processing device and substrate processing device | |
| CN100537142C (en) | Cleaning device and method for chemical mechanical polishing equipment | |
| JPH11156704A (en) | Substrate polishing equipment | |
| JP3933376B2 (en) | Substrate edge polishing equipment | |
| JP2001237202A (en) | Method of manufacturing semiconductor device | |
| CN107887266A (en) | The processing method of device wafer | |
| JP7368137B2 (en) | Wafer processing method | |
| KR100884939B1 (en) | Wafer Polishing Machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220208 |