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CN114008539A - Cleaning method - Google Patents

Cleaning method Download PDF

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Publication number
CN114008539A
CN114008539A CN202080045592.2A CN202080045592A CN114008539A CN 114008539 A CN114008539 A CN 114008539A CN 202080045592 A CN202080045592 A CN 202080045592A CN 114008539 A CN114008539 A CN 114008539A
Authority
CN
China
Prior art keywords
component
mass
less
cleaning
resin mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080045592.2A
Other languages
Chinese (zh)
Inventor
山田晃平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
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Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of CN114008539A publication Critical patent/CN114008539A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明在一个方式中提供一种能够降低对基板的影响，且树脂掩膜去除性优异的清洗方法。本发明在一个方式中涉及一种清洗方法，其包含使用清洗剂组合物从附着有树脂掩膜的被清洗物剥离树脂掩膜的工序，上述清洗剂组合物含有碱剂(成分A)、有机溶剂(成分B)、螯合剂(成分C)及水(成分D)，成分B是选自二醇醚及芳香族酮中的至少一种溶剂，成分C是具有2个以上的选自羧基及膦酸基中的至少一种酸基的化合物，上述清洗剂组合物在使用时的成分B的含量为1质量％以上且12质量％以下，上述清洗剂组合物在使用时的成分D的含量为65质量％以上且95质量％以下，被清洗物经过了进行如下处理的工序，该处理为使用了树脂掩膜的焊接及镀覆处理中的至少一种处理。In one aspect, the present invention provides a cleaning method which can reduce the influence on the substrate and is excellent in resin mask removability. In one aspect of the present invention, the present invention relates to a cleaning method including a step of peeling off a resin mask from an object to be cleaned to which a resin mask has adhered using a cleaning composition comprising an alkali agent (component A), an organic Solvent (component B), chelating agent (component C) and water (component D), component B is at least one solvent selected from glycol ethers and aromatic ketones, and component C is selected from carboxyl and A compound of at least one acid group in the phosphonic acid group, the content of the component B in the cleaning composition at the time of use is 1 mass % or more and 12 mass % or less, and the content of the component D in the cleaning composition at the time of use It is 65 mass % or more and 95 mass % or less, and the to-be-cleaned object has undergone a process of performing at least one of soldering and plating using a resin mask.

Description

Cleaning method
Technical Field
The present invention relates to a cleaning method, a method for manufacturing an electronic component using the cleaning method, and use of the electronic component.
Background
In recent years, in personal computers and various electronic devices, reduction in power consumption, increase in processing speed, and reduction in size have been progressing, and miniaturization of wiring of package substrates and the like mounted thereon has been progressing year by year. In the formation of such fine wiring and connection terminals such as pillars and bumps, a metal mask method has been mainly used so far, but the versatility is low and it is difficult to cope with miniaturization of wiring and the like, and therefore, the method is being changed to another new method.
As one of the new methods, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. The resin mask is finally peeled and removed, and a cleaning agent for resin mask peeling containing an alkaline agent and water is known as a cleaning agent for cleaning such as peeling and removal.
For example, jp 2007-254555 a (patent document 1) discloses a cleaning agent composition containing, as an alkaline cleaning agent capable of stripping and cleaning a cured photoresist such as a color resist, a black matrix resin, a polyimide-based alignment film, and a photo spacer on a color filter substrate for a liquid crystal display in a short time: at least one selected from the group consisting of a specific quaternary ammonium salt and a specific polycarboxylic acid salt, a hydrophilic organic solvent and an alkaline component. In the examples, a cleaning agent comprising 2.5 parts of tetrasodium ethylenediaminetetraacetate, 5 parts of diethylene glycol diethyl ether, 20 parts of diethylene glycol monomethyl ether, 10 parts of tetramethylammonium hydroxide and the balance of water, in total, 100 parts was described.
Jp 2015-79244 a (patent document 2) describes a cleaning agent composition for a resin mask layer, which contains a specific quaternary ammonium hydroxide, a water-soluble amine, an acid or an ammonium salt thereof, and water, as a cleaning agent capable of promoting both removal of the resin mask layer after heat treatment of a solder bump and suppression of solder corrosion and improving solder connection reliability. In the examples, a cleaning agent composition containing 1 part by mass of tetramethylammonium hydroxide, 5 parts by mass of monoethanolamine, 1 part by mass of ammonium formate, 85 parts by mass of water, 4 parts by mass of diethylene glycol monobutyl ether, and 4 parts by mass of dimethyl sulfoxide was described.
Jp 2006-173566 a (patent document 3) discloses a stripper composition having a low environmental load, excellent stripping properties of a resist residue and a metal oxide from a metal wiring generated after ashing even under low-temperature and short-time cleaning conditions, and excellent corrosion resistance to the metal wiring, wherein the stripper composition comprises 0.2 to 30 wt% of an organic amine, 0.05 to 10 wt% of an organic phosphonic acid, 60 to 99.7 wt% of water, and has a pH of 9 to 13 at 20 ℃. In the examples, a stripping composition containing 7.3 wt% of 1, 2-propanediamine, 2.0 wt% of 1-hydroxyethylidene-1, 1-diphosphonic acid and 90.7 wt% of water was described.
WO2018/043440 (patent document 4) describes a treatment liquid for a semiconductor element, which contains a hydroxylamine compound, an alkaline compound, and at least one selected from a reducing agent and a chelating agent, and has a pH of 10 or more. In the examples, a treatment liquid containing 10.0% of hydroxylamine, 10% of tetrahydrofurfuryl amine, 40% of 3-methoxy-3-methyl-1-butanol, 5.0% of diethylenetriaminepentaacetic acid, 1% of 5-MBTA 5-methyl-1H-benzotriazole, and the balance (34%) of water was described.
Disclosure of Invention
The present invention relates to a cleaning method including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using a cleaning agent composition,
the cleaning agent composition comprises an alkaline agent (component A), an organic solvent (component B), a chelating agent (component C) and water (component D),
component B is at least one solvent selected from glycol ethers and aromatic ketones,
the component C is a compound having at least one acid group selected from the group consisting of a carboxyl group and a phosphonic acid group, the acid group being 2 or more,
the content of the component B in the above-mentioned cleaning agent composition is 1 to 12% by mass when used,
the content of component D in the above-mentioned detergent composition when used is 65 to 95 mass%,
the object to be cleaned is subjected to at least one of soldering and plating using a resin mask.
The present invention relates to a method for manufacturing an electronic component, including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using a cleaning method of the present invention.
The present invention relates, in one aspect, to the use of a cleaning agent composition as a stripping agent for stripping a resin mask from an object to be cleaned, wherein the object to be cleaned is subjected to a step of performing at least one of a soldering and plating treatment using the resin mask;
the cleaning agent composition comprises an alkaline agent (component A), an organic solvent (component B), a chelating agent (component C) and water (component D),
component B is at least one solvent selected from glycol ethers and aromatic ketones,
the component C is a compound having at least one acid group selected from the group consisting of a carboxyl group and a phosphonic acid group, the acid group being 2 or more,
the content of the component B in use is 1 to 12 mass%,
the content of component D in use is 65 to 95 mass%.
Detailed Description
After forming fine wiring on a printed board or the like, a high cleaning property is required for the cleaning agent composition in order to reduce the residue of a resin mask and also in order to reduce the residue of an auxiliary agent or the like contained in solder, a plating solution or the like for forming the fine wiring or a bump.
The resin mask is a substance formed using a resist whose physical properties such as solubility in a developer are changed by light, electron beams, or the like. Resists are broadly classified into negative type and positive type according to the reaction method with light or electron beams. A negative resist has a characteristic that solubility in a developer is lowered when exposed to light, and a layer including a negative resist (hereinafter, also referred to as a "negative resist layer") is used as a resin mask in an exposed portion after exposure and development. A positive resist has a characteristic that solubility in a developer is improved when exposed to light, and a layer including a positive resist (hereinafter, also referred to as a "positive resist layer") is subjected to exposure and development treatments, in which exposed portions are removed and unexposed portions are used as a resin mask. By using a resin mask having such characteristics, a fine connection portion of a circuit board such as a metal wiring, a metal post, and a solder bump can be formed.
However, with the miniaturization of the wiring, it becomes difficult to remove the resin mask located in the fine gap. Further, if only the cleaning force is increased, the substrate surface may be damaged by dissolution, alteration, or the like. That is, the cleaning agent composition is required to have not only high resin mask removability but also less influence on the substrate.
In contrast, the present invention provides, in one embodiment, a cleaning method capable of reducing an influence on a substrate and having excellent resin mask removability.
[ cleaning method ]
The present invention relates to a cleaning method (hereinafter, also referred to as "the cleaning method of the present invention") including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using a cleaning agent composition,
the cleaning agent composition comprises an alkaline agent (component A), an organic solvent (component B), a chelating agent (component C) and water (component D),
component B is at least one solvent selected from glycol ethers and aromatic ketones,
the component C is a compound having at least one acid group selected from the group consisting of a carboxyl group and a phosphonic acid group, the acid group being 2 or more,
the content of the component B in the above-mentioned cleaning agent composition is 1 to 12% by mass when used,
the content of component D in the above-mentioned detergent composition when used is 65 to 95 mass%,
the object to be cleaned is subjected to at least one of soldering and plating using a resin mask.
According to the present invention, in one embodiment, a cleaning method capable of reducing an influence on a substrate and having excellent resin mask removability can be provided. In one or more embodiments, the cleaning method of the present invention can reduce the influence on the substrate as the object to be cleaned and efficiently remove the resin mask from the object to be cleaned. Further, by using the cleaning method of the present invention, high-quality electronic parts can be obtained with high yield. Furthermore, by using the cleaning agent composition of the present invention, an electronic component having a fine wiring pattern can be efficiently produced.
The mechanism of action of the effect of the cleaning method of the present invention is not clearly understood in detail, but is presumed as follows.
Minute residue of the resin mask may be generated in the fine gaps of the circuit pattern formed by copper plating or the like.
In the present invention, it is considered that the resin mask is impregnated with an alkali agent (component a), at least one organic solvent (component B) selected from glycol ethers and aromatic ketones, and water (component D) to promote dissociation of the alkali-soluble resin incorporated in the resin mask and further to cause charge repulsion, thereby promoting peeling of the resin mask. On the other hand, it is considered that in the presence of the alkaline agent (component a), the specific chelating agent (component C) is adsorbed to the surface of the circuit pattern formed by copper plating or the like, and the resin mask remaining in the fine gaps of the circuit pattern is easily detached. It is presumed that the ease of separation promotion and separation from the gap by these resins improves, and the cleaning property improves.
Further, it is considered that the content of the component B and the water (component D) contained in the cleaning method of the present invention is within a predetermined range, whereby the influence of the component B and/or the component C on the substrate is suppressed and excellent cleaning property is exhibited.
However, the present invention can be explained without being limited to this mechanism.
In the present invention, the resin mask to be peeled and removed is a mask for protecting the surface of a substance in etching, plating, heating, or other treatment, that is, a mask that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after an exposure and development step, a resist layer subjected to at least one of exposure and development (hereinafter, also referred to as "subjected to exposure and/or development treatment"), or a cured resist layer. As a resin material for forming the resin mask, in one or more embodiments, a film-like photosensitive resin, a resist film, or a photoresist can be cited. As the resist film, a general-purpose resist film can be used.
The cleaning method of the present invention includes a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using a cleaning agent composition, and the object to be cleaned is subjected to at least one of a soldering and plating treatment using the resin mask.
In one or more embodiments of the cleaning method of the present invention, the step of peeling the resin mask from the object to be cleaned includes a step of bringing the object to be cleaned to which the resin mask is attached into contact with the cleaning agent composition of the present invention. Hereinafter, the cleaning agent composition used in the step of peeling the resin mask from the object to be cleaned in the cleaning method of the present invention is also referred to as "the cleaning agent composition of the present invention". Accordingly, the present invention relates, in one aspect, to a cleaning method using a cleaning agent composition for resin mask peeling (the cleaning agent composition of the present invention) containing an alkaline agent (component a), an organic solvent (component B), a chelating agent (component C), and water (component D), wherein the component B is at least one solvent selected from glycol ethers and aromatic ketones, the component C is a compound having at least one acid group selected from carboxyl groups and phosphonic acid groups in an amount of 2 or more, the content of the component B in use is 1 mass% or more and 12 mass% or less, and the content of the component D in use is 65 mass% or more and 95 mass% or less. According to the cleaning agent composition of the present invention, in one or more embodiments, a cleaning method that can reduce the influence on a substrate and has excellent resin mask removability can be provided.
The method of peeling a resin mask from an object to be cleaned using the cleaning agent composition of the present invention, or the method of bringing the cleaning agent composition of the present invention into contact with an object to be cleaned, includes, for example: a method of immersing the substrate in a cleaning bath containing a cleaning agent composition to bring the substrate into contact with the cleaning agent composition, a method of spraying the cleaning agent composition to bring the substrate into contact with the cleaning agent composition (shower type), an ultrasonic cleaning method of irradiating ultrasonic waves while immersing the substrate in the cleaning bath, and the like. The cleaning agent composition of the present invention can be used for cleaning without dilution. Examples of the object to be cleaned include the above-mentioned object to be cleaned.
In one or more embodiments, the cleaning method of the present invention may include a step of bringing the object to be cleaned into contact with the cleaning agent composition, rinsing the object with water, and drying the object. In one or more embodiments, the cleaning method of the present invention may include a step of bringing the object to be cleaned into contact with the cleaning agent composition and then rinsing the object with water.
In the cleaning method of the present invention, from the viewpoint of facilitating the exertion of the cleaning power of the cleaning agent composition of the present invention, it is preferable that ultrasonic waves are irradiated when the cleaning agent composition of the present invention is brought into contact with an object to be cleaned, and it is more preferable that the ultrasonic waves have a relatively high frequency. From the same viewpoint, the irradiation conditions of the ultrasonic waves are, for example, preferably 26 to 72kHz and 80 to 1500W, more preferably 36 to 72kHz and 80 to 1500W.
In the cleaning method of the present invention, the temperature of the cleaning composition of the present invention is preferably 40 ℃ or higher, more preferably 50 ℃ or higher, from the viewpoint of facilitating the exertion of the cleaning power of the cleaning composition, and is preferably 70 ℃ or lower, more preferably 60 ℃ or lower, from the viewpoint of reducing the influence on the substrate.
[ component A: alkaline agent
The alkaline agent (hereinafter, also simply referred to as "component a") contained in the cleaning agent composition of the present invention includes at least one selected from inorganic bases and organic bases in one or more embodiments, and is preferably an inorganic base from the viewpoint of reducing the load of wastewater treatment. The component A may be 1 kind or a combination of 2 or more kinds.
In one or more embodiments, the inorganic base may be a hydroxide, carbonate, or silicate of an alkali metal or alkaline earth metal, and specifically, may be at least one selected from the group consisting of sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate, and potassium silicate. From the viewpoint of improving the resin mask removability, the combination of 1 or 2 or more selected from among sodium hydroxide, potassium hydroxide, sodium carbonate, and potassium carbonate is preferable, at least one of sodium hydroxide and potassium hydroxide is more preferable, and potassium hydroxide is even more preferable. In the present invention, the inorganic base does not include ammonia.
In one or more embodiments, the organic base may be a quaternary ammonium hydroxide represented by the following formula (I), an amine represented by the following formula (II), or the like. In one or more embodiments, the component a is preferably a combination of a quaternary ammonium hydroxide represented by formula (I) and an amine represented by formula (II) from the viewpoint of improving the resin mask removability. In addition, the component a is preferably a quaternary ammonium hydroxide represented by the following formula (I) from the viewpoint of improving the resin mask removability.
[ chemical formula 1]
Figure BDA0003423663290000071
In the above formula (I), R1、R2、R3And R4Each independently is at least one selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl, and hydroxypropyl.
[ chemical formula 2]
Figure BDA0003423663290000072
In the above formula (II), R5Represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, R6Is at least one selected from hydrogen atom, hydroxyethyl group, hydroxypropyl group, methyl group or ethyl group, R7Is at least one selected from aminoethyl, hydroxyethyl or hydroxypropyl, or in formula (II), R5Is at least one selected from methyl, ethyl, aminoethyl, hydroxyethyl or hydroxypropyl, R6And R7Bonded to each other to form a pyrrolidine ring or a piperazine ring together with the N atom in the formula (II).
Examples of the quaternary ammonium hydroxide represented by the formula (I) include salts containing a quaternary ammonium cation and a hydroxide group. Specific examples of the quaternary ammonium hydroxide include those selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, bis (2-hydroxyethyl) dimethylammonium hydroxide, bis (2-hydroxyethyl) diethylammonium hydroxide, bis (2-hydroxyethyl) dipropylammonium hydroxide, tris (2-hydroxyethyl) methylammonium hydroxide, tris (2-hydroxyethyl) ethylammonium hydroxide, tris (2-hydroxyethyl) propylammonium hydroxide, tetrakis (2-hydroxyethyl) ammonium hydroxide, and mixtures thereof, And tetrakis (2-hydroxypropyl) ammonium hydroxide. Among these, tetramethylammonium hydroxide and tetraethylammonium hydroxide are preferable, and tetramethylammonium hydroxide is more preferable, from the viewpoint of improving the removability of the resin mask.
Examples of the amine represented by the formula (II) include alkanolamines, primary to tertiary amines, and heterocyclic compounds. Specific examples of amines include those selected from the group consisting of monoethanolamine, monoisopropanolamine, N-methyl monoethanolamine, N-methyl isopropanolamine, N-ethyl monoethanolamine, N-ethyl isopropanolamine, diethanolamine, diisopropanolamine, N-dimethyl monoethanolamine, N-dimethyl monoisopropanolamine, N-methyl diethanolamine, N-methyl diisopropanolamine, N-diethyl monoethanolamine, N-diethyl monoisopropanolamine, N-ethyl diethanolamine, N-ethyl diisopropanolamine, N- (. beta. -aminoethyl) ethanolamine, N- (. beta. -aminoethyl) isopropanolamine, N- (. beta. -aminoethyl) diethanolamine, N- (. beta. -aminoethyl) diisopropanolamine, 1-methylpiperazine, 1- (2-hydroxyethyl) pyrrolidine, N- (beta. -aminoethyl) isopropanolamine, N- (beta. -aminoethyl) diisopropanolamine, N- (2-hydroxyethyl) pyrrolidine, N- (N-methyl-isopropanolamine, N- (N-methyl) isopropanolamine, N- (N-dimethyl) isopropanolamine, N-methyl isopropanolamine, N-di-N-isopropanolamine, N-di-methyl di-isopropanolamine, N-diethy, N-diethy-isopropamide, N-methyl isopropamide, N-methyl-ethyl-methyl-ethyl-isopropamide, N-methyl-ethyl-diethy-ethyl-diethoxide, N-ethyl-diethanol-ethyl-, 1- (2-hydroxyethyl) piperazine, ethylenediamine and diethylenetriamine. Among these, monoethanolamine and diethanolamine are preferable, and monoethanolamine is more preferable from the viewpoint of improving the resin mask removability.
The content of the component a in the use of the cleaning agent composition of the present invention is preferably 1% by mass or more, more preferably 4% by mass or more, and further preferably 6% by mass or more, from the viewpoint of improving the resin mask removability, and is preferably 20% by mass or less, more preferably 16% by mass or less, and further preferably 12% by mass or less from the same viewpoint. More specifically, the content of the component a in the detergent composition of the present invention during use is preferably 1 mass% or more and 20 mass% or less, more preferably 4 mass% or more and 16 mass% or less, and still more preferably 6 mass% or more and 16 mass% or less. When the component a is a combination of 2 or more, the content of the component a means the total content thereof.
The "content of each component of the detergent composition at the time of use" in the present invention means the content of each component at the time of cleaning, that is, at the time point when the detergent composition is used for cleaning.
[ component B: organic solvent ]
In one or more embodiments, the organic solvent (hereinafter, also referred to as "component B") contained in the cleaning agent composition of the present invention is at least one solvent selected from glycol ethers and aromatic ketones. The component B may be 1 or a combination of 2 or more.
The glycol ether is a compound having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms, from the viewpoint of improving the resin mask removability and reducing the influence on the substrate. Specific examples of the glycol ether include at least one selected from the group consisting of diethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether.
The aromatic ketone may, for example, be acetophenone, from the viewpoint of improving the resin mask removability and reducing the influence on the substrate.
The content of the component B in the use of the cleaning agent composition of the present invention is 1 mass% or more, preferably 1.5 mass% or more, and more preferably 2 mass% or more from the viewpoint of improving the resin mask removability, and is 12 mass% or less, preferably 8 mass% or less, and more preferably 4 mass% or less from the viewpoint of reducing the load of the drainage treatment and the influence on the substrate. More specifically, the content of the component B in use is 1 mass% or more and 12 mass% or less, preferably 1.5 mass% or more and 8 mass% or less, and more preferably 2 mass% or more and 4 mass% or less. When the component B is a combination of 2 or more, the content of the component B means the total content thereof.
[ component C: chelating agent ]
The chelating agent (hereinafter, also referred to as "component C") contained in the detergent composition of the present invention is a compound having at least one acid group selected from a carboxyl group and a phosphonic acid group in an amount of 2 or more. In addition, the component C is preferably a compound having 4 or less of the above acid groups from the viewpoint of improving the resin mask removability. As component C, in one or more embodiments, aminotrimethylene phosphonic acid, 2-phosphonobutane-1, 2, 4-tricarboxylic acid, etidronic acid, and the like can be cited. Among these, 2-phosphonobutane-1, 2, 4-tricarboxylic acid, etidronic acid, and the like, which are compounds containing no nitrogen atom, are preferable from the viewpoint of reducing environmental load. The component C may be 1 kind or a combination of 2 or more kinds.
The molecular weight of the component C is preferably 1000 or less, more preferably 500 or less, from the viewpoint of improving the resin mask removability.
The content of the component C in the cleaning agent composition of the present invention in use is preferably 0.5% by mass or more, more preferably 1% by mass or more, from the viewpoint of improving the resin mask removability, and is preferably 5% by mass or less, more preferably 3% by mass or less, from the same viewpoint. More specifically, the content of the component C in use is preferably 0.5% by mass or more and 5% by mass or less, and more preferably 1% by mass or more and 3% by mass or less. When the component C is a combination of 2 or more, the content of the component C means the total content thereof.
In the cleaning agent composition of the present invention, the mass ratio (C/B) of the component C to the component B is preferably 0.1 or more, more preferably 0.3 or more, and even more preferably 0.4 or more, from the viewpoint of improving the resin mask removability and reducing the influence on the substrate, and is preferably 1 or less, more preferably 0.8 or less, and even more preferably 0.7 or less from the same viewpoint. More specifically, the mass ratio (C/B) is preferably 0.1 or more and 1 or less, more preferably 0.3 or more and 0.8 or less, and still more preferably 0.4 or more and 0.7 or less.
In the cleaning agent composition of the present invention, the mass ratio (a/C) of the component a to the component C is preferably 1 or more, more preferably 1.5 or more, and further preferably 2 or more, from the viewpoint of improving the resin mask removability and reducing the influence on the substrate, and is preferably 10 or less, more preferably 8 or less, and further preferably 6 or less from the same viewpoint. More specifically, the mass ratio (a/C) is preferably 1 or more and 10 or less, more preferably 1.5 or more and 8 or less, and further preferably 2 or more and 6 or less.
[ component D: water ]
Examples of the water (hereinafter, also referred to as "component D") contained in the cleaning agent composition of the present invention include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water in one or more embodiments.
The content of the component D in the cleaning agent composition of the present invention may be the remainder excluding the component a, the component B, the component C and any of the following components. Specifically, the content of the component D in the cleaning agent composition of the present invention in use is 65 mass% or more, preferably 75 mass% or more, and more preferably 82 mass% or more from the viewpoint of improving the resin mask removability, reducing the load of the drainage treatment, and reducing the influence on the substrate, and is 95 mass% or less, preferably 90 mass% or less, and more preferably 87 mass% or less from the viewpoint of improving the resin mask removability. More specifically, the content of the component D in the detergent composition of the present invention during use is, in one or more embodiments, 65 mass% or more and 95 mass% or less, preferably 75 mass% or more and 90 mass% or less, and more preferably 82 mass% or more and 87 mass% or less. The content of the component D in the detergent composition of the present invention in use is preferably 82 mass% or more and 95 mass% or less, more preferably 82 mass% or more and 90 mass% or less, and still more preferably 82 mass% or more and 97 mass% or less in one or more embodiments.
In the cleaning agent composition of the present invention, the mass ratio (D/B) of the component D to the component B is preferably 5 or more, more preferably 13 or more, and further preferably 25 or more from the viewpoint of improving the resin mask removability, reducing the load of the drainage treatment, and reducing the influence on the substrate, and is preferably 45 or less, more preferably 40 or less, and further preferably 35 or less from the viewpoint of improving the resin mask removability. More specifically, the mass ratio (D/B) is preferably 5 or more and 45 or less, more preferably 13 or more and 40 or less, and further preferably 25 or more and 35 or less.
In the cleaning agent composition of the present invention, the mass ratio (D/C) of the component D to the component C is preferably 30 or more, more preferably 35 or more, and even more preferably 40 or more from the viewpoint of improving the resin mask removability, reducing the load of the drainage treatment, and reducing the influence on the substrate, and is preferably 90 or less, more preferably 65 or less, and even more preferably 55 or less from the viewpoint of improving the resin mask removability. More specifically, the mass ratio (D/C) is preferably 30 or more and 90 or less, more preferably 35 or more and 65 or less, and further preferably 40 or more and 55 or less.
[ component E: ammonium salts of ammonia or organic acids ]
In one or more embodiments, the cleaning agent composition of the present invention preferably further contains at least one of ammonia and an ammonium salt of an organic acid (hereinafter, also referred to as "component E") from the viewpoint of resin mask removability. The ammonium salt of an organic acid is preferably an ammonium salt of a carboxylic acid having 1 to 5 carbon atoms, and more preferably ammonium formate, from the viewpoint of resin mask removability. The component E may be 1 kind or a combination of 2 or more kinds.
The content of the component E in the cleaning agent composition of the present invention in use is preferably 0.1 mass% or more and 2 mass% or less, more preferably 0.2 mass% or more and 1.5 mass% or less, and still more preferably 0.3 mass% or more and 1 mass% or less, from the viewpoint of improving the resin mask removability. When the component E is a combination of 2 or more, the content of the component E means the total content thereof.
[ other ingredients ]
The cleaning agent composition of the present invention may contain other components as necessary in addition to the components A to E. Examples of the other components include components that can be used in general detergents, and examples thereof include organic solvents other than component B, surfactants, chelating agents other than component C, thickeners, dispersants, rust inhibitors, polymer compounds, solubilizing agents, antioxidants, preservatives, antifoaming agents, and antibacterial agents.
The content of other components in the detergent composition of the present invention during use is preferably 0 mass% or more and 2 mass% or less, more preferably 0 mass% or more and 1.5 mass% or less, still more preferably 0 mass% or more and 1.3 mass% or less, and still more preferably 0 mass% or more and 1 mass% or less.
The cleaning agent composition of the present invention may, in one or more embodiments, be free of hydroxylamine and/or salts thereof.
In one or more embodiments, the cleaning agent composition of the present invention may be substantially free of linear sugar alcohols. For example, the linear sugar alcohol content of the cleaner composition of the invention, when used, is less than 0.1 wt% in one or more embodiments.
The total content of organic substances derived from the component a, the component B, the component C, and any component in the cleaning agent composition of the present invention when used is preferably 30 mass% or less, more preferably 25 mass% or less, further preferably 20 mass% or less, and further more preferably 16 mass% or less, from the viewpoint of reducing the load of wastewater treatment and the influence on the substrate, and is preferably 2 mass% or more, more preferably 4 mass% or more, further preferably 8 mass% or more, and further more preferably 12 mass% or more from the viewpoint of improving the resin mask removability. More specifically, the total content of organic substances derived from the component a, the component B, the component C, and any component in the cleaning agent composition of the present invention during use is preferably 2 mass% or more and 30 mass% or less, more preferably 4 mass% or more and 25 mass% or less, further preferably 8 mass% or more and 20 mass% or less, and further more preferably 12 mass% or more and 16 mass% or less.
The pH value at the time of use of the cleaning agent composition of the present invention is preferably 10 or more, more preferably 11 or more, further preferably 12 or more, and further more preferably 13 or more, from the viewpoints of improving the resin mask removability and reducing the influence on the substrate. In the present invention, the "pH at the time of use" means a pH at 25 ℃ and can be measured by using a pH meter. Specifically, the measurement can be carried out by the method described in examples.
[ method for producing detergent composition ]
The cleaning agent composition of the present invention can be produced by blending the above components A to D and, if necessary, the above optional components by a known method. For example, the detergent composition of the present invention may contain at least the components A to D. Accordingly, the present invention relates to a method for producing a cleaning agent composition comprising at least a step of blending the components a to D. In the present invention, "blending" includes an operation of mixing the components A to D and, if necessary, the above-mentioned optional components at the same time or in an optional order. In the method for producing the detergent composition of the present invention, the preferred amounts of the respective components may be the same as the preferred amounts of the respective components of the detergent composition of the present invention.
The cleaning agent composition of the present invention can be prepared as a concentrate with a reduced amount of water (component D) within a range that does not cause separation, precipitation, or the like to impair storage stability. The concentrate of the detergent composition is preferably diluted at a dilution ratio of 3 or more from the viewpoint of transportation and storage, and preferably diluted at a dilution ratio of 30 or less from the viewpoint of storage stability. The concentrate of the cleaning agent composition can be used by diluting with water (component D) so that the components a to D and any component are contained in the above-mentioned amounts (i.e., the amounts during cleaning). Further, the concentrate of the cleaning agent composition may be used by adding each component separately at the time of use. In the present invention, "in use" or "in cleaning" of the cleaner composition as a concentrated solution means a state in which a concentrate of the cleaner composition is diluted.
In one or more embodiments, the cleaning agent composition of the present invention can be used as a stripping agent for stripping a resin mask from an object to be cleaned, and the object to be cleaned is subjected to at least one of a soldering and plating treatment using the resin mask.
That is, the present invention relates, in one aspect, to the use of a cleaning agent composition as a stripping agent for stripping a resin mask from an object to be cleaned, the object to be cleaned being subjected to a step of performing at least one of a soldering and plating treatment using the resin mask;
the cleaning agent composition comprises an alkaline agent (component A), an organic solvent (component B), a chelating agent (component C) and water (component D),
component B is at least one solvent selected from glycol ethers and aromatic ketones,
the component C is a compound having at least one acid group selected from the group consisting of a carboxyl group and a phosphonic acid group, the acid group being 2 or more,
the content of the component B in use is 1 to 12 mass%,
the content of component D in use is 65 to 95 mass%.
[ subject to be cleaned ]
In one or more embodiments, the cleaning agent composition of the present invention can be used for cleaning an object to be cleaned to which a resin mask is attached. In one or more embodiments, the object to be cleaned may be an object to be cleaned having a metal portion on a surface thereof, and examples thereof include an electronic component and an intermediate product for manufacturing the electronic component. Examples of the electronic component include at least 1 component selected from metal plates such as a printed circuit board, a wafer, a copper plate, and an aluminum plate. The manufacturing intermediate is an intermediate product in a manufacturing process of an electronic component, and includes an intermediate product after a resin mask process.
Specific examples of the object to be cleaned to which the resin mask is attached include an electronic component having a wiring, a connection terminal, and the like formed on a surface of a substrate through a process of performing at least one of soldering and plating (copper plating, aluminum plating, nickel plating, and the like) using the resin mask. In the present invention, soldering means that solder bumps are formed by heating a resin mask-absent portion on a substrate in which solder is present. In the present invention, the plating treatment is a treatment of applying at least one selected from copper plating, aluminum plating, and nickel plating to an area on the substrate where the resin mask is not present. The resin mask absent portion is a portion where a resin mask laminated on a substrate is removed by a development process in a resist pattern formed by the development process. Accordingly, the present invention relates, in one aspect, to the use of the cleaning composition of the present invention as a cleaning agent in the production of electronic parts. In one or more embodiments, the object to be cleaned is subjected to at least one of soldering and plating treatment on a substrate having a resist pattern formed by developing a resin mask laminated on the substrate. For example, examples of the object to be cleaned include a substrate having: the substrate is provided with a part serving as a resin mask existing part for forming a cured resist layer on the substrate and a part serving as a solder bump or a plating layer on an absent part of the resin mask.
In one or more embodiments, the cleaning agent composition of the present invention can be suitably used for cleaning an object to be cleaned to which a resin mask is attached or a resin mask subjected to plating treatment and/or heating treatment is further attached, from the viewpoint of cleaning effect. The resin mask may be, for example, a negative resin mask or a positive resin mask. In the present invention, the negative resin mask refers to a resin mask formed using a negative resist, and includes, for example, a negative resist layer subjected to exposure and/or development treatment. In the present invention, the positive resin mask refers to a resin mask formed using a positive resist, and includes, for example, a positive resist layer subjected to exposure and/or development treatment.
[ method for producing electronic component ]
The present invention relates to a method for manufacturing an electronic component (hereinafter, also referred to as "method for manufacturing an electronic component of the present invention") including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using the cleaning method of the present invention. Examples of the object to be cleaned include the above-mentioned object to be cleaned. The method for manufacturing an electronic component of the present invention can effectively remove a resin mask adhering to the electronic component by cleaning using the cleaning method of the present invention, and thus can manufacture an electronic component with high reliability. Further, by performing the cleaning method of the present invention, the resin mask adhering to the electronic component can be easily removed, and therefore, the cleaning time can be shortened, and the manufacturing efficiency of the electronic component can be improved.
[ set ]
The present invention relates, in one aspect, to a kit (hereinafter also referred to as "kit of the present invention") for use in any one of the cleaning method of the present invention and the electronic component manufacturing method of the present invention. The kit of the invention is in one or more embodiments a kit for manufacturing the detergent composition of the invention. The kit of the present invention can provide a cleaning agent composition which can reduce the influence on a substrate and has excellent resin mask removal performance.
One embodiment of the kit of the present invention includes a kit (3-liquid type detergent composition) containing, in a state not mixed with each other: the solution containing the component A (the 1 st liquid), the solution containing the component B (the 2 nd liquid), and the solution containing the component C (the 3 rd liquid), at least one selected from the 1 st liquid, the 2 nd liquid, and the 3 rd liquid further contains a part or all of the component D, and the 1 st liquid, the 2 nd liquid, and the 3 rd liquid are mixed at the time of use. After mixing the 1 st, 2 nd and 3 rd liquids, the mixture may be diluted with the component C (water) as required. The liquid 1, the liquid 2 and the liquid 3 may each contain any of the above components as required.
As another embodiment of the kit of the present invention, there may be mentioned a kit (2-liquid type detergent composition) comprising, in a state not mixed with each other: a solution containing the component A and the component C (solution 1) and a solution containing the component B (solution 2), at least one of the solution 1 and the solution 2 further containing a part or all of the component D (water), and the solution 1 and the solution 2 are mixed at the time of use. After mixing the 1 st and 2 nd liquids, the mixture may be diluted with the component D (water) as required. The liquid 1 and the liquid 2 may each contain any of the above components as required.
The invention also relates to one or more of the following embodiments.
< 1 > a cleaning agent composition for resin mask removal, comprising an alkali agent (component A), an organic solvent (component B), a chelating agent (component C) and water (component D), wherein component B is at least one solvent selected from glycol ethers and aromatic ketones, component C is a compound having at least one acid group selected from carboxyl groups and phosphonic acid groups in an amount of 2 or more, the content of component B in use is 1 mass% or more and 12 mass% or less, and the content of component D in use is 65 mass% or more and 95 mass% or less.
A cleaning agent composition having < 2 > such as < 1 > wherein the content of the component C at the time of use is preferably 0.5% by mass or more, more preferably 1% by mass or more, and preferably 5% by mass or less, more preferably 3% by mass or less, more specifically preferably 0.5% by mass or more and 5% by mass or less, more preferably 1% by mass or more and 3% by mass or less.
A cleaning agent composition of < 3 > such as < 1 > or < 2 > in which the mass ratio (C/B) of the component C to the component B is preferably 0.1 or more, more preferably 0.3 or more, further preferably 0.4 or more, and preferably 1 or less, more preferably 0.8 or less, further preferably 0.7 or less, more specifically, the mass ratio (C/B) is preferably 0.1 or more and 1 or less, more preferably 0.3 or more and 0.8 or less, further preferably 0.4 or more and 0.7 or less.
The cleaning agent composition of any of < 4 > such as < 1 > to < 3 >, wherein the mass ratio (D/B) of the component D to the component B is preferably 5 or more, more preferably 13 or more, further preferably 25 or more, and preferably 45 or less, more preferably 40 or less, further preferably 35 or less, more specifically, the mass ratio (D/B) is preferably 5 or more and 45 or less, more preferably 13 or more and 40 or less, further preferably 25 or more and 35 or less.
The detergent composition of any of < 5 > such as < 1 > to < 4 > has a pH at 25 ℃ of preferably 10 or more, more preferably 11 or more, further preferably 12 or more, and further preferably 13 or more.
The cleaning agent composition of any of < 6 > such as < 1 > to < 5 >, wherein the component B is preferably a compound having a structure in which 1 to 3 moles of ethylene glycol is added to an alcohol having 1 to 8 carbon atoms, and more preferably at least one selected from the group consisting of diethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether.
The cleaning agent composition of any one of < 7 > such as < 1 > to < 6 > preferably further contains at least one of ammonia and an ammonium salt of an organic acid (component E), more preferably further contains an ammonium salt of a carboxylic acid having 1 to 5 carbon atoms, and further preferably further contains ammonium formate.
The cleaning agent composition of any one of < 8 > such as < 1 > to < 7 >, wherein the component A is at least one selected from inorganic bases and organic bases, the inorganic base is preferably a hydroxide, a carbonate or a silicate of an alkali metal or an alkaline earth metal, more preferably at least one selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate and potassium silicate, further preferably a combination of 1 or 2 or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate and potassium carbonate, further preferably at least one selected from sodium hydroxide and potassium hydroxide, and further preferably potassium hydroxide.
< 9 > such as < 1 > to < 7 >, wherein the component A is a quaternary ammonium hydroxide represented by the following formula (I),
[ chemical formula 3]
Figure BDA0003423663290000181
In the above formula (I), R1、R2、R3And R4Each is independentThe solid is at least one selected from methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl.
< 10 > such as < 1 > to < 7 >, wherein the component A is at least one selected from inorganic bases and organic bases, the organic bases are preferably at least one selected from quaternary ammonium hydroxides represented by the following formula (I) and amines represented by the following formula (II), more preferably a combination of quaternary ammonium hydroxides represented by the formula (I) and amines represented by the formula (II) is used,
[ chemical formula 4]
Figure BDA0003423663290000182
In the above formula (I), R1、R2、R3And R4Each independently is at least one member selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl,
[ chemical formula 5]
Figure BDA0003423663290000183
In the above formula (II), R5Represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, R6Is at least one selected from hydrogen atom, hydroxyethyl group, hydroxypropyl group, methyl group or ethyl group, R7Is at least one selected from aminoethyl, hydroxyethyl or hydroxypropyl, or in formula (II), R5Is at least one selected from methyl, ethyl, aminoethyl, hydroxyethyl or hydroxypropyl, R6And R7Bonded to each other to form a pyrrolidine ring or a piperazine ring together with the N atom in the formula (II).
< 11 > such as < 9 > or < 10 >, wherein the quaternary ammonium hydroxide represented by the formula (I) is preferably at least one selected from the group consisting of tetramethylammonium hydroxide and tetraethylammonium hydroxide, and more preferably tetramethylammonium hydroxide.
< 12 > such as < 10 > wherein the amine represented by the formula (II) is preferably at least one selected from the group consisting of monoethanolamine and diethanolamine, more preferably monoethanolamine.
The content of the component a in the detergent composition at the time of use is preferably 1% by mass or more, more preferably 4% by mass or more, and further preferably 6% by mass or more, and from the same viewpoint, preferably 20% by mass or less, more preferably 16% by mass or less, and further preferably 12% by mass or less, more specifically, the content of the component a in the detergent composition of the present invention at the time of use is preferably 1% by mass or more and 20% by mass or less, more preferably 4% by mass or more and 16% by mass or less, and further preferably 6% by mass or more and 16% by mass or less.
The cleaning agent composition is any one of < 14 > such as < 1 > to < 13 >, wherein the component B is acetophenone.
The cleaning agent composition of any of < 15 > such as < 1 > to < 14 > wherein the content of the component B at the time of use is preferably 1.5% by mass or more, more preferably 2% by mass or more, and preferably 8% by mass or less, more preferably 4% by mass or less, more specifically, the content of the component B at the time of use is preferably 1.5% by mass or more and 8% by mass or less, more preferably 2% by mass or more and 4% by mass or less.
The cleaning agent composition of any one of < 16 > such as < 1 > to < 15 > wherein the component C is preferably a compound having 4 or less of at least one acid group selected from the group consisting of a carboxyl group and a phosphonic acid group, more preferably aminotrimethylenephosphonic acid, 2-phosphonobutane-1, 2, 4-tricarboxylic acid, etidronic acid, and further preferably 2-phosphonobutane-1, 2, 4-tricarboxylic acid, etidronic acid.
The cleaning agent composition of any one of < 17 > such as < 1 > to < 16 > wherein the molecular weight of the component C is preferably 1000 or less, more preferably 500 or less.
The cleaning agent composition of any of < 18 > such as < 1 > to < 17 >, wherein the mass ratio (A/C) of the component A to the component C is preferably 1 or more, more preferably 1.5 or more, further preferably 2 or more, and preferably 10 or less, more preferably 8 or less, further preferably 6 or less, and the mass ratio (A/C) is preferably 1 or more and 10 or less, more preferably 1.5 or more and 8 or less, further preferably 2 or more and 6 or less.
The cleaning agent composition of any of < 19 > such as < 1 > to < 18 > wherein the content of the component D at the time of use is preferably 75% by mass or more, more preferably 82% by mass or more, and 95% by mass or less, preferably 90% by mass or less, more preferably 87% by mass or less, more specifically, the content of the component D at the time of use is preferably 75% by mass or more and 90% by mass or less, more preferably 82% by mass or more and 87% by mass or less.
The cleaning agent composition of any of < 20 > such as < 1 > to < 19 > wherein the mass ratio (D/C) of the component D to the component C is preferably 30 or more, more preferably 35 or more, further preferably 40 or more, and preferably 90 or less, more preferably 65 or less, further preferably 55 or less, more specifically, the mass ratio (D/C) is preferably 30 or more and 90 or less, more preferably 35 or more and 65 or less, further preferably 40 or more and 55 or less.
The cleaning agent composition of any of < 21 > such as < 1 > to < 20 > wherein the content of the component E at the time of use is preferably 0.1% by mass or more and 2% by mass or less, more preferably 0.2% by mass or more and 1.5% by mass or less, and still more preferably 0.3% by mass or more and 1% by mass or less.
< 22 > such as < 1 > to < 21 > wherein the linear sugar alcohol is used in an amount, in one or more embodiments, preferably less than 0.1 wt%, and more preferably substantially free of linear sugar alcohol.
A cleaning agent composition of < 23 > such as < 1 > to < 22 > wherein the total content of organic substances derived from the component A, the component B, the component C and any component in use is preferably 30% by mass or less, more preferably 25% by mass or less, further preferably 20% by mass or less, even more preferably 16% by mass or less, and preferably 2% by mass or more, more preferably 4% by mass or more, and even more preferably 8% by mass or more, more preferably 12% by mass or more, and more specifically, the total content of organic substances derived from the component a, the component B, the component C, and any component when used is preferably 2% by mass or more and 30% by mass or less, more preferably 4% by mass or more and 25% by mass or less, still more preferably 8% by mass or more and 20% by mass or less, and still more preferably 12% by mass or more and 16% by mass or less.
The detergent composition of any one of < 24 > such as < 1 > to < 23 > further includes at least one of ammonia and an ammonium salt of an organic acid (component E), and the content of the other components than the components A to E in the detergent composition is preferably 0% by mass or more and 2% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, further preferably 0% by mass or more and 1.3% by mass or less, and further more preferably 0% by mass or more and 1% by mass or less.
< 25 > a method for producing an electronic part, which comprises a step of peeling a resin mask from an object to be cleaned to which the resin mask is adhered, using a cleaning agent composition of any one of < 1 > to < 24 >.
The method for manufacturing an electronic part is < 26 > such as < 25 >, wherein the electronic part is at least 1 part selected from a printed board, a wafer, and a metal plate.
< 27 > a cleaning method comprising a step of peeling a resin mask from an object to be cleaned to which the resin mask is adhered by using a cleaning agent composition of any one of < 1 > to < 24 >,
the object to be cleaned is subjected to at least one of soldering and plating using a resin mask.
The cleaning method is preferably an electronic component in which at least one of a wiring and a connection terminal is formed on a surface of a substrate by performing a process of at least one of soldering and plating using a resin mask, wherein the cleaning object to which the resin mask is attached is < 28 > such as < 26 >.
The cleaning method is characterized in that the cleaning method is < 29 > such as < 27 > or < 28 > in which the object to be cleaned is subjected to at least one of soldering and plating treatment on a substrate having a resist pattern formed by developing a resin mask laminated on the substrate.
The cleaning method of any one of < 30 > such as < 27 > to < 29 >, wherein the step of peeling the resin mask from the object to be cleaned preferably comprises a step of bringing the object to be cleaned to which the resin mask is attached into contact with the cleaning agent composition.
The cleaning method of < 31 > such as < 30 >, wherein the method for bringing the cleaning agent composition of the present invention into contact with the object to be cleaned is preferably 1 or more selected from the following methods: a method of bringing the cleaning composition into contact by immersing the cleaning bath in which the cleaning composition is placed, a method of bringing the cleaning composition into contact by spraying the cleaning composition (shower type), and an ultrasonic cleaning method of irradiating ultrasonic waves while immersing the cleaning composition.
The cleaning method of any one of < 32 > such as < 27 > to < 31 > wherein the temperature of the cleaning agent composition is preferably 40 ℃ or more, more preferably 50 ℃ or more, and preferably 70 ℃ or less, more preferably 60 ℃ or less.
Use of the cleaning agent composition of any one of < 33 > < 1 > to < 24 > as a cleaning agent for an object to be cleaned to which a resin mask is attached.
< 34 > use of a cleaning composition as a stripping agent for stripping a resin mask from an object to be cleaned, wherein the object to be cleaned is subjected to a step of performing at least one of a soldering and plating treatment using the resin mask, and the cleaning composition is any one of < 1 > to < 24 >.
Examples
The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.
1. Preparation of cleaning agent compositions for examples 1 to 11, comparative examples 1 to 5, and reference examples 1 to 2
The cleaning agent compositions of examples 1 to 11, comparative examples 1 to 5 and reference examples 1 to 2 were prepared by mixing the component A, the component B, the component C, the component D and other components in the composition ratios shown in Table 1 in terms of the effective components and stirring and mixing the same. The composition of table 1 is the amount of solid components. The pH value of each of the detergent compositions shown in Table 1 at 25 ℃ was measured by using a pH meter (HM-30G, Toyo electric wave industries Co., Ltd.), and it was a value obtained by immersing an electrode of the pH meter in the detergent composition for 3 minutes.
The following components were used as the components of the cleaning agent compositions of examples 1 to 11, comparative examples 1 to 5 and reference examples 1 to 2.
(component A)
Tetramethylammonium hydroxide [ TMAH (25%) manufactured by Showa Denko K.K. ]
Potassium hydroxide [ Special grade 48% by mass of solid content, manufactured by Kanto chemical Co., Ltd ]
Monoethanolamine [ manufactured by Nippon catalyst Co., Ltd ]
1, 2-propanediamine [ Fuji film and Guangdong drug Co., Ltd ]
(not component A)
Hydroxylamine [ Fuji film and Guangdong chemical Co., Ltd., first-class, 50% aqueous solution ]
(component B)
Diethylene glycol monobutyl ether [ manufactured by Nippon emulsifier Co., Ltd. ]
Ethylene glycol monobenzyl ether [ manufactured by Nippon emulsifier Co., Ltd. ]
Diethylene glycol monohexyl ether (manufactured by Nippon emulsifier Co., Ltd.; diethylene glycol monohexyl ether)
Phenoxyethanol [ Fuji film and pure drug Co., Ltd., Special grade, ethylene glycol monophenyl ether ]
Diethylene glycol diethyl ether [ Fuji film and Guangdong Kabushiki Kaisha, first-grade, diethylene glycol diethyl ether ]
Acetophenone [ Fuji film and Shisha Shuichi, Special grade ]
(component C)
Etidronic acid [ Dequest2010, 60% content, available from Italmatch Japan K.K. ]
2-phosphonobutane-1, 2, 4-tricarboxylic acid [ produced by Italmatch Japan K.K., Dequest7000(CN) in an amount of 50% ]
Aminotrimethylene phosphonic acid [ Dequest2000, 50% content, available from Italmatch Japan K.K. ]
(component D)
Water [ pure water of 1. mu.S/cm or less produced by Water purifier G-10DSTSET manufactured by Organo corporation ]
(component E)
Ammonium formate [ Fushan drugs Industrial Co., Ltd ]
Ammonia [ Fuji film and Guangdong medicinal Kabushiki Kaisha, first-class, 25% aqueous solution ]
(other Components)
5-methyl-1H-benzotriazole [ Tokyo chemical industry Co., Ltd ]
2. Evaluation of cleaning agent composition
The following evaluations were made with respect to the cleaning agent compositions of examples 1 to 11, comparative examples 1 to 5 and reference examples 1 to 2.
[ preparation of test piece ]
A PKG Substrate (Package Substrate) was laminated on the surface of the polyimide after electroless plating with a photosensitive film (photo RY-5560, thickness 60 μm, negative dry film resist) for circuit formation under the following conditions, and after curing the exposed portions by selective exposure treatment (exposure step), the unexposed portions were removed by development treatment (development step), and a Substrate having a resist pattern (negative resin mask in a pattern shape) was obtained. Then, the areas where the unexposed portions were removed by the above-described development treatment were subjected to a copper plating treatment (thickness: 50 μm), thereby obtaining test pieces (30mm × 50mm and 120mm × 120 mm).
(1) Laminating: the treatment was carried out at a roll temperature of 50 ℃ and a roll pressure of 1.4Bar by using a cleaning roll (RY-505Z, manufactured by Rayon industries, Ltd.) and a vacuum applicator (VA 7024/HP5, manufactured by Rohm and Haas Co.).
(2) Exposure: using a direct drawing device for printed boards (Mercurex LI-9500, manufactured by SCREEN Graphic and Precision Solutions Co., Ltd.), 15mJ/cm2The exposure is performed with the exposure amount of (1).
(3) Pattern shape: line-shaped pattern with L/S of 20 mu m/20 mu m
(4) And (3) developing: the resin mask in the unexposed portion was removed by using a developing apparatus for a substrate (LT-980366, manufactured by Yankee corporation) and a 1% sodium carbonate aqueous solution at 30 ℃ under a spray pressure of 0.2 MPa.
[ cleaning test and evaluation of the number of residues on resin mask (immersion conditions) ]
100g of each of the cleaning agent compositions of examples 1 to 11, comparative examples 1 to 5 and reference examples 1 to 2 was added to a tall-type 200mL glass beaker, heated to 50 ℃ and stirred at 600rpm using a rotor (fluororesin (Polytetrafluoroethylene); phi 8 mm. times.25 mm), and then the test piece was immersed in this state for 10 minutes. Then, 100g of water was added to a 100mL glass beaker to prepare a rinsing bath, which was immersed in the rinsing bath for rinsing, and then dried by blowing nitrogen gas.
The number of residues was counted by visually checking the presence or absence of the resin mask remaining in the specific pattern region of the test piece after the cleaning test at the boundary between the thin line part and the solid part at 300-fold magnification using an optical microscope "digital microscope VHX-2000" (manufactured by kirschmann). The results are shown in Table 1. When the number of residues is significantly large, such as when the residual resin mask is continuously left, it is marked "> 50" in table 1.
The test piece has a size of 30mm × 50mm, and includes a circuit pattern of copper having a thin line portion and a solid portion, wherein the pattern has a thickness of 50 μm, the thin line portion has a width of 20 μm, and the solid portion has a width of 300 to 1500 μm.
[ cleaning test and evaluation of resin mask peeling initiation Rate ]
100g of each of the cleaning agent compositions of examples 1 to 11, comparative examples 1 to 5 and reference examples 1 to 2 was added to a tall 200mL glass beaker, heated to 50 ℃ and stirred at 600rpm using a rotor (fluororesin (PTFE), φ 8 mm. times.25 mm), and then the test piece was immersed in this state. The time during which the resin mask was peeled off and floated in the cleaning agent composition was measured by visual observation, and the determination was made as follows. The results are shown in Table 1.
The test piece used was the same type as the test piece used in the immersion condition of the washing test.
< evaluation criteria >
A: within 5 minutes
B: longer than 5 minutes and within 10 minutes
C: longer than 10 minutes and within 15 minutes
D: longer than 15 minutes
[ evaluation of substrate Damage ]
Table 1 shows the results of evaluation according to the following evaluation criteria by visually confirming whether or not a change in color or the like of the pattern portion occurs in the appearance of the substrate before and after the cleaning test under the above immersion conditions.
< evaluation criteria >
A: no change was observed before and after the washing test.
B: changes were found before and after the cleaning test.
[ Table 1]
Figure BDA0003423663290000261
As shown in table 1, the results of the cleaning test under the immersion condition are: the cleaning agent compositions of examples 1 to 11 had less influence on the substrate and had excellent resin mask removability, compared with reference examples 1 to 2 containing no component C, comparative examples 1 and 4 containing no component B, comparative example 2 containing no component A, and comparative examples 3 and 5 containing no component B and no component D within predetermined ranges.
Comparative example 3 is an example of an embodiment according to patent document 4, and comparative example 4 is an example of an embodiment according to patent document 3.
Further, the cleaning agent compositions of examples 1 to 2 and reference example 2 were subjected to a cleaning test under the conditions of continuous immersion and spraying as described below, and the resin mask removability was evaluated.
[ cleaning test, evaluation of the number of residues on resin mask (immersion + shower conditions) ]
The dipping and spraying were continuously carried out as follows. 1kg of each of the cleaning agent compositions of examples 1 to 2 and reference example 2 was added to a 1L glass beaker, heated to 50 ℃ and stirred at a rotation speed of 300rpm using a rotor (fluororesin (PTFE), φ 8 mm. times.25 mm), and then the test piece was immersed for 3 minutes in this state. A10L stainless steel beaker separately prepared was used as a storage tank, 10kg of the same cleaning agent composition as that of the 1L glass beaker was added thereto, and the mixture was heated to 50 ℃. Then, the test piece was sprayed with the cleaning agent composition in the reservoir for 2 minutes (pressure: 0.1MPa, spraying distance: 10cm) by a box-type spray washer equipped with a single-fluid nozzle (sector) VVP9060 (manufactured by Ikeda corporation) as a spray nozzle. The sprayed cleaning agent composition is recovered in a storage tank and recycled. Next, 1kg of water was added to a 1L glass beaker to prepare a rinsing bath, which was immersed in the rinsing bath for rinsing, and then dried by blowing nitrogen gas.
The number of residues was counted by visually checking the presence or absence of a resin mask remaining in a specific pattern region of the test piece after the cleaning test at a portion to be a boundary between a thin line portion and a solid portion under an optical microscope "digital microscope VHX-2000" (manufactured by kirschmann). The results are shown in Table 2.
The test piece had the same circuit pattern as the test piece under the dipping condition except that the test piece had a size of 120mm × 120 mm.
[ Table 2]
Figure BDA0003423663290000281
As shown in table 2, the results of the cleaning test under the immersion and spray conditions were: the cleaning agent compositions of examples 1 to 2 were superior in resin mask removability to reference example 2 containing no component C.
Industrial applicability
According to the present invention, a cleaning agent composition for resin mask peeling which can reduce the influence on a substrate and has excellent resin mask removability can be provided. Therefore, the cleaning method using the cleaning agent composition of the present invention is useful in the process of manufacturing electronic components, and can shorten the cleaning process of electronic components to which resin masks are attached, improve the performance and reliability of the manufactured electronic components, and improve the productivity of semiconductor devices.

Claims (15)

1.一种清洗方法，其包含使用清洗剂组合物从附着有树脂掩膜的被清洗物剥离树脂掩膜的工序，1. A cleaning method comprising a step of peeling off a resin mask from an object to be cleaned to which a resin mask is attached using a cleaning agent composition, 所述清洗剂组合物含有：碱剂即成分A、有机溶剂即成分B、螯合剂即成分C、以及水即成分D，The cleaning composition contains: an alkali agent, namely component A, an organic solvent, namely component B, a chelating agent, namely component C, and water, namely component D, 成分B是选自二醇醚及芳香族酮中的至少一种溶剂，Component B is at least one solvent selected from glycol ethers and aromatic ketones, 成分C是具有2个以上的选自羧基及膦酸基中的至少一种酸基的化合物，Component C is a compound having two or more at least one acid group selected from a carboxyl group and a phosphonic acid group, 所述清洗剂组合物在使用时的成分B的含量为1质量％以上且12质量％以下，The content of the component B in use of the cleaning composition is 1 mass % or more and 12 mass % or less, 所述清洗剂组合物在使用时的成分D的含量为65质量％以上且95质量％以下，The content of the component D at the time of use of the cleaning composition is 65 mass % or more and 95 mass % or less, 被清洗物经过了进行如下处理的工序，该处理为使用了树脂掩膜的焊接及镀覆处理中的至少一种处理。The object to be cleaned has undergone a process of performing at least one of soldering and plating using a resin mask. 2.根据权利要求1所述的清洗方法，其中，所述清洗剂组合物在使用时的成分C的含量为0.5质量％以上且5质量％以下。2 . The cleaning method according to claim 1 , wherein the content of the component C at the time of use of the cleaning composition is 0.5 mass % or more and 5 mass % or less. 3 . 3.根据权利要求1或2所述的清洗方法，其中，成分C相对于成分B的质量比C/B为0.1以上且1以下。The cleaning method of Claim 1 or 2 whose mass ratio C/B of the component C with respect to the component B is 0.1 or more and 1 or less. 4.根据权利要求1至3中任一项所述的清洗方法，其中，成分D相对于成分B的质量比D/B为5以上且45以下。4 . The cleaning method according to claim 1 , wherein a mass ratio D/B of the component D to the component B is 5 or more and 45 or less. 5 . 5.根据权利要求1至4中任一项所述的清洗方法，其中，所述清洗剂组合物在25℃时的pH值为10以上。The cleaning method according to any one of claims 1 to 4, wherein the cleaning agent composition has a pH value of 10 or more at 25°C. 6.根据权利要求1至5中任一项所述的清洗方法，其中，成分B是具有对于碳数1以上且8以下的醇加成了1摩尔以上且3摩尔以下的乙二醇的结构的化合物。6 . The cleaning method according to claim 1 , wherein the component B has a structure in which 1 mol or more and 3 mol or less of ethylene glycol is added to an alcohol having 1 or more and 8 or less carbon atoms. 7 . compound of. 7.根据权利要求1至6中任一项所述的清洗方法，其中，成分A是下述式(I)所示的季铵氢氧化物，7. The cleaning method according to any one of claims 1 to 6, wherein component A is a quaternary ammonium hydroxide represented by the following formula (I),
Figure FDA0003423663280000021
Figure FDA0003423663280000021
 所述式(I)中，R1、R2、R3及R4各自独立地为选自甲基、乙基、丙基、羟甲基、羟乙基及羟丙基中的至少一种。In the formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl and hydroxypropyl . 8.根据权利要求1至7中任一项所述的清洗方法，其中，所述清洗剂组合物还包含：氨及有机酸的铵盐中的至少一种即成分E，8. The cleaning method according to any one of claims 1 to 7, wherein the cleaning composition further comprises: at least one of ammonia and an ammonium salt of an organic acid, that is, component E, 所述清洗剂组合物的成分A～E以外的其他成分的含量为0质量％以上且2质量％以下。Content of other components other than components A to E of the said cleaning composition is 0 mass % or more and 2 mass % or less. 9.根据权利要求1至8中任一项所述的清洗方法，其中，所述清洗剂组合物在使用时的来自成分A、成分B、成分C及任意成分的有机物的总含量为30质量％以下。9. The cleaning method according to any one of claims 1 to 8, wherein the total content of organic substances derived from component A, component B, component C and optional components when the cleaning composition is used is 30 mass %the following. 10.根据权利要求1至9中任一项所述的清洗方法，其中，所述清洗剂组合物在使用时的清洗剂组合物中的成分D的含量为82质量％以上且95质量％以下。10 . The cleaning method according to claim 1 , wherein the content of component D in the cleaning composition at the time of use of the cleaning composition is 82 mass % or more and 95 mass % or less. 11 . . 11.根据权利要求1至10中任一项所述的清洗方法，其中，成分D相对于成分C的质量比D/C为30以上且90以下。The cleaning method according to any one of claims 1 to 10, wherein the mass ratio D/C of the component D to the component C is 30 or more and 90 or less. 12.根据权利要求1至11中任一项所述的清洗方法，其中，被清洗物经过了对基板进行焊接及镀覆处理中的至少一种处理的工序，该基板具有通过对层叠于基板的树脂掩膜进行显影处理而形成的抗蚀图案。12. The cleaning method according to any one of claims 1 to 11, wherein the object to be cleaned has undergone a process of performing at least one of soldering and plating on a substrate that has been laminated on the substrate by The resist pattern formed by developing the resin mask. 13.一种电子部件的制造方法，其包含使用根据权利要求1至12中任一项所述的清洗方法从附着有树脂掩膜的被清洗物剥离树脂掩膜的工序。13 . A method for producing an electronic component, comprising a step of peeling off the resin mask from the object to be cleaned to which the resin mask is attached, using the cleaning method according to claim 1 . 14.根据权利要求13所述的电子部件的制造方法，其中，电子部件为印刷基板。14. The method of manufacturing an electronic component according to claim 13, wherein the electronic component is a printed circuit board. 15.一种清洗剂组合物在从被清洗物剥离树脂掩膜时作为剥离剂的用途，所述被清洗物经过了进行如下处理的工序，该处理为使用了树脂掩膜的焊接及镀覆处理中的至少一种处理；15. Use of a cleaning composition as a release agent when peeling a resin mask from an object to be cleaned that has undergone a process of performing soldering and plating using the resin mask at least one of the processing; 所述清洗剂组合物含有：碱剂即成分A、有机溶剂即成分B、螯合剂即成分C、及水即成分D，The cleaning composition contains: the alkali agent is the component A, the organic solvent is the component B, the chelating agent is the component C, and the water is the component D, 成分B是选自二醇醚及芳香族酮中的至少一种溶剂，Component B is at least one solvent selected from glycol ethers and aromatic ketones, 成分C是具有2个以上的选自羧基及膦酸基中的至少一种酸基的化合物，Component C is a compound having two or more at least one acid group selected from a carboxyl group and a phosphonic acid group, 使用时的成分B的含量为1质量％以上且12质量％以下，The content of component B at the time of use is 1 mass % or more and 12 mass % or less, 使用时的成分D的含量为65质量％以上且95质量％以下。Content of the component D at the time of use is 65 mass % or more and 95 mass % or less.
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