CN114005926B - Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof - Google Patents

Abstract

The invention relates to the technical field of semiconductors, in particular to a heat conducting layer, a light emitting diode, a semiconductor device and a preparation method of the semiconductor device. The heat conducting layer of the light emitting diode comprises a metal bonding layer, a metal reflecting layer, a metal blocking layer and a heat conducting metal layer which are sequentially arranged. According to the invention, the heat conduction layer is arranged to play a role in improving the heat conduction coefficient of the chip, so that the heat dissipation effect is improved.

Description

Thermal conductive layer, light emitting diode, semiconductor device and preparation method thereof

Technical field

The present invention relates to the field of semiconductor technology, and specifically to a thermal conductive layer, a light-emitting diode, a semiconductor device and a preparation method thereof.

Background technique

Light Emitting Diode (LED in English) is a semiconductor light-emitting device made by utilizing the P-N junction electroluminescence principle of semiconductors. LED has the advantages of no pollution, high brightness, low power consumption, long life, low operating voltage, and easy miniaturization. Since the successful development of gallium nitride (GaN)-based LEDs in the 1990s, with the continuous progress of research, their luminous brightness has also continued to increase, and their application fields have become wider and wider. As the efficiency of power GaN-based LEDs continues to improve, replacing existing lighting sources with GaN-based LED semiconductor lamps will become an unstoppable trend. However, there are still many problems that need to be solved for semiconductor lighting to enter thousands of households. The core of which is the service life problem caused by uneven luminous efficiency and heat dissipation.

In the existing technology, methods to improve diode heat dissipation include: replacing the original BT board (Bismaleimide Triazine, BT resin substrate material) with a high thermal conductivity material in the LED die-bonding area. The high thermal conductivity material is copper, ceramics or other thermal conductive materials. The LED chip is solidified on a high thermal conductivity material, and the LED chip is covered with high-temperature glue so that the LED chip is in direct contact with the high thermal conductivity material. In this way, the heat generated by the LED can be quickly conducted downward to the driver board to improve heat dissipation performance. In the existing technology, there are technical problems such as poor thermal conductivity of the chip itself (45W/mk) and poor heat dissipation effect of the package.

In view of this, the present invention is proposed.

Contents of the invention

One object of the present invention is to provide a thermal conductive layer for a light-emitting diode to solve the technical problems in the prior art that the chip itself has poor thermal conductivity and the packaging heat dissipation effect is poor; the thermal conductive layer of the present invention can improve the thermal conductivity of the chip, and thereby It plays a role in improving the thermal conductivity of the chip.

Another object of the present invention is to provide a light-emitting diode with good heat dissipation effect.

Another object of the present invention is to provide a semiconductor device with excellent heat dissipation effect.

Another object of the present invention is to provide a method for manufacturing a semiconductor device, which is simple and easy to implement.

In order to achieve the above objects of the present invention, the following technical solutions are adopted:

A thermal conductive layer of a light-emitting diode. The thermal conductive layer includes a metal bonding layer, a metal reflective layer, a metal barrier layer and a thermally conductive gold layer arranged in sequence.

In one embodiment, the metal bonding layer includes at least one of a Ti layer, a Cr layer, and a Rh layer;

And/or, the thickness of the metal bonding layer is 10Å~50Å.

In one embodiment, the metal reflective layer includes an Al layer and/or an Ag layer;

And/or, the thickness of the metal reflective layer is 16KÅ~20KÅ.

In one embodiment, the thermally conductive metal layer includes an Au layer and/or a Cu layer;

And/or, the thickness of the thermally conductive metal layer is 9KÅ~20KÅ.

In one embodiment, the metal barrier layer includes at least one of a Pt layer, a Ti layer and a Ni layer;

In one embodiment, the thickness of the metal barrier layer is 4.7KÅ~10.3KÅ;

In one embodiment, the metal barrier layer includes a first Ti layer, a first Pt layer, a second Ti layer and a first Ni layer in sequence, and the first Ti layer is connected to the metal reflective layer;

In one embodiment, the thickness of the first Ti layer is 1.5KÅ~2.5KÅ, the thickness of the first Pt layer is 1.5KÅ~2.5KÅ, and the thickness of the second Ti layer is 0.2KÅ~0.8KÅ. , the thickness of the first Ni layer is 2KÅ~5KÅ.

A light-emitting diode, including at least:

An LED light-emitting unit, the LED light-emitting unit at least includes a substrate with an upper surface and a lower surface; an epitaxial structural layer, including at least an N-type semiconductor layer, a multi-quantum well active layer, and a P-type semiconductor layer; a P electrode , is disposed on the epitaxial structure layer and is electrically connected to the P-type semiconductor layer; an N electrode is disposed on the epitaxial structure layer and is electrically connected to the N-type semiconductor layer;

And, a thermally conductive layer is provided on the lower surface of the substrate, and includes the metal bonding layer, the metal reflective layer, the metal barrier layer and the thermally conductive metal layer as described above in the direction away from the epitaxial structure layer.

Preferably, a DBR reflective layer is further included between the lower surface of the substrate and the thermal conductive layer.

A semiconductor device includes a light-emitting diode as described above, and a carrying substrate for carrying the light-emitting diode.

A method for preparing a semiconductor device, including:

(1) LED light-emitting unit formation steps: including epitaxial structure growth steps, electrode fabrication and thermal conductive layer deposition steps, as follows:

First, a growth substrate is provided, including an upper surface and a lower surface, and an N-type semiconductor layer, a multi-quantum well active layer, and a P-type semiconductor layer are epitaxially grown on the upper surface of the substrate;

Secondly, electrodes are made, and a P electrode electrically connected to the P-type semiconductor layer and an N electrode electrically connected to the N-type semiconductor layer are formed on the epitaxial structure;

Finally, the metal bonding layer, metal reflective layer, metal barrier layer and thermally conductive metal layer as described above are sequentially deposited on the lower surface of the substrate;

(2) The step of bonding with the carrier substrate: provide a carrier substrate, and fix the LED light-emitting unit on the carrier substrate through an adhesive.

In one embodiment, the evaporation conditions of the metal bonding layer include: evaporation rate is 0.4Å/S~0.6Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C ~30℃;

In one embodiment, the evaporation conditions of the metal reflective layer include: evaporation rate is 4.5Å/S~5.5Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C~ 30℃;

In one embodiment, the evaporation conditions of the metal barrier layer include: evaporation rate is 0.5Å/S~5Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C~70 ℃;

In one embodiment, the evaporation conditions of the thermally conductive metal layer include: evaporation rate is 14Å/S~16Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C~30°C. .

In one embodiment, in the metal barrier layer, the evaporation rate of the Ti layer is 0.4Å/S~0.6Å/S, the evaporation rate of the Pt layer is 0.6Å/S~0.8Å/S, and the evaporation rate of the Ni layer is 0.4Å/S~0.6Å/S. The evaporation rate is 5.5Å/S~6.5Å/S.

Compared with the prior art, the beneficial effects of the present invention are:

(1) The light-emitting diode of the present invention is provided with a metal adhesive layer, a metal reflective layer, a metal barrier layer and a thermally conductive metal layer, and each layer coordinates with each other to improve the thermal conductivity of the chip, thereby improving the thermal conductivity of the chip. function; in addition, it reduces the use of precious metals and saves costs.

(2) The light-emitting diode of the present invention contains the above-mentioned thermal conductive layer, which has good light reflection and heat dissipation effects, and improves the light extraction efficiency and service life of the light-emitting diode.

(3) The semiconductor device of the present invention also has excellent heat dissipation effect, and its preparation method is simple and easy to implement.

Description of drawings

In order to more clearly explain the specific embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings that need to be used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description The drawings illustrate some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting any creative effort.

Figure 1 is a schematic structural diagram of a light-emitting diode of the present invention;

Figure 2 is a schematic structural diagram of the semiconductor device of the present invention.

Reference signs:

1-light emitting diode, 2-carrying substrate, 3-thermal conductive layer, 31-metal bonding layer, 32-metal reflective layer, 33-metal barrier layer, 34-thermal conductive metal layer, 4-substrate, 5-epitaxial structure, 51-N-type semiconductor layer, 52-multi-quantum well active layer, 53-P-type semiconductor layer, 6-electrode structure, 61-current spreading layer, 62-P electrode, 63-N electrode, 7-packaging structure.

Detailed ways

The embodiments of the present invention will be described in detail below with reference to examples, but those skilled in the art will understand that the following examples are only used to illustrate the present invention and should not be regarded as limiting the scope of the present invention. If the specific conditions are not specified in the examples, the conditions should be carried out according to the conventional conditions or the conditions recommended by the manufacturer. If the manufacturer of the reagents or instruments used is not indicated, they are all conventional products that can be purchased commercially.

According to one aspect of the invention, the invention relates to a thermally conductive layer of a light-emitting diode, the thermally conductive layer including a metal bonding layer, a metal reflective layer, a metal barrier layer and a thermally conductive metal layer arranged in sequence.

The light-emitting diode of the present invention is provided with a metal adhesive layer, a metal reflective layer, a metal barrier layer and a thermally conductive metal layer in sequence, and each layer coordinates with each other to improve the thermal conductivity of the chip, thereby improving the thermal conductivity of the chip; In addition, the use of precious metals is reduced and costs are saved.

In some embodiments, the metal bonding layer includes at least one of a Ti layer, a Cr layer, and a Rh layer.

In the present invention, a metal adhesive layer is provided to increase electrode adhesion, so that the metal electrode forms ohmic contact with the substrate.

In some embodiments, the metal bonding layer may be a Ti layer, a Cr layer, or a Rh layer, or a combination of a Ti layer and a Cr layer, or a combination of a Ti layer and a Rh layer, or a Ti layer, a Cr layer, and a Rh layer in sequence. The combination, or the Cr layer, Rh layer, Cr layer and Ti layer, etc., can be the repeated superposition of different material layers.

In some embodiments, the metal bonding layer has a thickness of 10 Å to 50 Å. The thickness of the metal bonding layer of the present invention is specifically 12Å, 15Å, 17Å, 20Å, 22Å, 25Å, 27Å, 30Å, 32Å, 35Å, 37Å, 40Å, 42Å, 45Å, 47Å or 49Å. Of course, it can also be selected within the above range. Other values are not limited here. By arranging a metal bonding layer of appropriate thickness, the present invention can better increase electrode adhesion.

In some embodiments, the metal reflective layer includes an Al layer and/or an Ag layer.

The metal reflective layer of the present invention can reflect the light transmitted to the bottom back to the inside of the chip, and finally reflect it out of the chip, thereby improving the light extraction efficiency.

In some embodiments, the metal reflective layer can be an Al layer or an Ag layer, or an Al layer and an Ag layer in sequence, or an Al layer, an Ag layer, and an Al layer in sequence, etc., that is, it can be a repeated superposition of layers of different materials.

In some embodiments, the thickness of the metal reflective layer is 16KÅ~20KÅ. The thickness of the metal reflective layer is specifically 16.2KÅ, 16.5KÅ, 16.7KÅ, 17KÅ, 17.5KÅ, 18KÅ, 18.5KÅ, 19KÅ, 19.5KÅ or 19.7KÅ, etc. Of course, other values within the above range can also be selected, which will not be discussed here. Make limitations. The metal reflective layer with the above thickness of the present invention can better improve the light extraction efficiency.

In some embodiments, the thermally conductive metal layer includes an Au layer and/or a Cu layer.

The thermally conductive metal layer of the present invention has high thermal conductivity and needs to be inactive in nature.

In some embodiments, the thermally conductive metal layer can be an Au layer or a Cu layer, or an Au layer and a Cu layer in sequence, or an Au layer, a Cu layer and an Au layer in sequence, etc., that is, it can be a repetition of layers of different materials. Overlay.

In some embodiments, the thickness of the thermally conductive metal layer is 9KÅ~20KÅ. The thickness of the thermally conductive metal layer is specifically 10KÅ, 11KÅ, 12KÅ, 13KÅ, 14KÅ, 15KÅ, 16KÅ, 17KÅ, 18KÅ, 19KÅ or 20KÅ, etc. Of course, other values within the above range can also be selected, and are not limited here. The present invention adopts the thermally conductive metal layer with the above thickness range, which can achieve better thermal conductivity effect.

In some embodiments, the metal barrier layer includes at least one of a Pt layer, a Ti layer, and a Ni layer.

Pt is a better atomic diffusion barrier layer, but due to the large stress, it cannot be plated thicker. Therefore, a combination of Ti and Ni and/or a combination of Ti and Pt can be used as a barrier layer for the metal reflective layer to prevent the upward diffusion of metal in the metal reflective layer. This is more reliable than directly using Pt and can achieve better blocking effects. .

In some embodiments, the thickness of the metal barrier layer ranges from 4.7 KÅ to 10.3 KÅ. The thickness of the metal barrier layer is specifically 5KÅ, 5.5KÅ, 6KÅ, 6.5KÅ, 7KÅ, 7.5KÅ, 8KÅ, 9KÅ or 10KÅ.

In some embodiments, the metal barrier layer includes a first Ti layer, a first Pt layer, a second Ti layer, and a first Ni layer in sequence, and the first Ti layer is connected to the metal reflective layer.

In some embodiments, the thickness of the first Ti layer is 1.5KÅ~2.5KÅ, the thickness of the first Pt layer is 1.5KÅ~2.5KÅ, and the thickness of the second Ti layer is 0.2KÅ~0.8KÅ. , the thickness of the first Ni layer is 2KÅ~5KÅ.

The present invention can improve the thermal conductivity of the chip by arranging a metal bonding layer, a metal reflective layer, a metal barrier layer and a thermally conductive metal layer of appropriate thickness, and each layer coordinates with each other to improve the thermal conductivity of the chip, thereby improving the thermal conductivity of the chip.

According to another aspect of the invention, the invention also relates to a light-emitting diode, which at least includes:

An LED light-emitting unit, the LED light-emitting unit at least includes a substrate with an upper surface and a lower surface; an epitaxial structural layer, including at least an N-type semiconductor layer, a multi-quantum well active layer, and a P-type semiconductor layer; a P electrode , is disposed on the epitaxial structure layer and is electrically connected to the P-type semiconductor layer; an N electrode is disposed on the epitaxial structure layer and is electrically connected to the N-type semiconductor layer;

And, a thermally conductive layer is provided on the lower surface of the substrate, and includes the metal bonding layer, the metal reflective layer, the metal barrier layer and the thermally conductive metal layer as described above in the direction away from the epitaxial structure layer.

The LED light-emitting unit also includes a current expansion layer, and the current expansion layer includes a P electrode current expansion layer and/or an N electrode current expansion layer. The N electrode current spreading layer is in direct contact with the N-type semiconductor layer, and the P electrode current spreading layer is in direct contact with the P-type semiconductor layer.

By plating a layer of alloy on one side of the substrate, the invention improves the thermal conductivity of the raw material, thereby improving the heat dissipation performance of the chip.

Substrates of the present invention include, but are not limited to, sapphire and silicon carbide.

According to another embodiment of the present invention, a DBR reflective layer is further included between the lower surface of the substrate and the thermal conductive layer. The reflective layer may consist of alternating layers of high refractive index and low refractive index materials. Among them, the material of the high refractive index layer is selected from TiO, TiO ₂ , Ti ₃ O ₅ , Ti ₂ O ₃ , Ta ₂ O ₅ , ZrO ₂ or any combination of the above; the material of the low refractive index layer is selected from SiO ₂ , SiNx , Al ₂ O ₃ or any combination of the above.

According to another aspect of the present invention, the present invention also relates to a semiconductor device, including a light-emitting diode as described above, and a carrying substrate for carrying the light-emitting diode.

The carrier substrate may be a printed circuit board (PCB), flexible printed circuit board (FCB), ceramic substrate or composite substrate. In addition to being responsible for carrying the light-emitting diodes, it further conducts the heat generated by the light-emitting diodes to achieve a heat dissipation effect. The light-emitting diode can be a quaternary or ternary series light-emitting diode, and the light it emits can be red, blue, green, yellow, etc.

Further, the semiconductor device also includes a packaging structure. The packaging structure is to form a transparent packaging material on a light-emitting diode using glue dispensing technology, and then heat and harden it into shape; the transparent packaging material is an organic insulating material with high light penetration properties, such as epoxy resin (epoxy), polyimide ( Poly-imides), silica gel (siliconresin) or materials mixed above.

According to another aspect of the invention, the invention also relates to a method for manufacturing a semiconductor device, including:

(1) LED light-emitting unit formation steps: including epitaxial structure growth steps, electrode fabrication and thermal conductive layer deposition steps, as follows:

First, a growth substrate is provided, including an upper surface and a lower surface, and an N-type semiconductor layer, a multi-quantum well active layer, and a P-type semiconductor layer are epitaxially grown on the upper surface of the substrate;

Secondly, electrodes are made, and a P electrode electrically connected to the P-type semiconductor layer and an N electrode electrically connected to the N-type semiconductor layer are formed on the epitaxial structure;

Finally, the metal bonding layer, metal reflective layer, metal barrier layer and thermally conductive metal layer as described above are sequentially deposited on the lower surface of the substrate;

(2) The step of bonding with the carrier substrate: provide a carrier substrate, and fix the LED light-emitting unit on the carrier substrate through an adhesive.

The preparation method of the semiconductor device of the present invention is simple and easy to implement.

In some embodiments, the thermally conductive layer is disposed on the substrate by evaporation.

In the present invention, the metal bonding layer, metal reflective layer, metal barrier layer and thermal conductive metal layer in the thermal conductive layer are plated layer by layer through evaporation.

In one embodiment, the evaporation conditions of the metal bonding layer include: evaporation rate is 0.4Å/S~0.6Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C ~30℃;

In one embodiment, the evaporation conditions of the metal reflective layer include: evaporation rate is 4.5Å/S~5.5Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C~ 30℃;

In one embodiment, the evaporation conditions of the metal barrier layer include: evaporation rate is 0.5Å/S~5Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C~70 ℃;

In one embodiment, the evaporation conditions of the thermally conductive metal layer include: evaporation rate is 14Å/S~16Å/S, vacuum degree is greater than 0 and less than or equal to 1E-6pa, and evaporation temperature is 25°C~30°C. .

In one embodiment, in the metal barrier layer, the evaporation rate of the Ti layer is 0.4Å/S~0.6Å/S, the evaporation rate of the Pt layer is 0.6Å/S~0.8Å/S, and the evaporation rate of the Ni layer is 0.4Å/S~0.6Å/S. The evaporation rate is 5.5Å/S~6.5Å/S.

By setting the above evaporation conditions, the present invention can better realize the plating of each layer in the thermal conductive layer and improve the thermal conductivity effect of the diode, that is, improve its heat dissipation effect.

The present invention will be further explained below in conjunction with specific embodiments.

Figure 1 is a schematic structural diagram of a light emitting diode of the present invention.

Figure 2 is a schematic structural diagram of the semiconductor device of the present invention.

Example 1

A light-emitting diode 1, including: an LED light-emitting unit, the LED light-emitting unit at least includes a substrate 4, having an upper surface and a lower surface; an epitaxial structure 5, including at least an N-type semiconductor layer 51, a multi-quantum well active Layer 52, P-type semiconductor layer 53; an electrode structure 6, including: a P electrode 62, which is provided on the epitaxial structure layer 5 and is electrically connected to the P-type semiconductor layer 53; an N electrode 63, which is provided On the epitaxial structure layer 5 and electrically connected to the N-type semiconductor layer 51, there is a current expansion layer 61, and the current expansion layer 61 is in direct contact with the P-type semiconductor layer 53;

And, a thermal conductive layer 3 is provided on the lower surface of the substrate 4 and includes the metal adhesive layer 31, the metal reflective layer 32, the metal barrier layer 33 and the thermal conductive layer in sequence in the direction away from the epitaxial structure layer 5. metal layer 34;

The metal bonding layer 31 is a Ti layer with a thickness of 10Å;

The metal reflective layer 32 is an Al layer with a thickness of 16KÅ;

The metal barrier layer 33 includes a first Ti layer, a first Pt layer, a second Ti layer and a first Ni layer in sequence. The first Ti layer is connected to the metal reflective layer 32; the thickness of the first Ti layer is 1KÅ, and the first Pt layer The thickness of the layer is 2KÅ, the thickness of the second Ti layer is 0.5KÅ, and the thickness of the first Ni layer is 3KÅ;

Thermal conductive metal layer 34 is an Au layer with a thickness of 9KÅ.

Example 2

A semiconductor device, including the light-emitting diode 1 of Embodiment 1, a carrier substrate 2 and a packaging structure 7 for carrying the light-emitting diode 1;

The preparation method of the above-mentioned semiconductor device includes:

(1) LED light-emitting unit formation steps: including the steps of growing the epitaxial structure 5, making the electrode structure 6, and depositing the thermal conductive layer 3, as follows:

First, a growth substrate 4 is provided, including an upper surface and a lower surface, and an N-type semiconductor layer 51, a multi-quantum well active layer 52, and a P-type semiconductor layer 53 are epitaxially grown on the upper surface of the substrate 4;

Secondly, electrodes are made, and a P electrode 62 electrically connected to the P-type semiconductor layer 53 and an N-electrode 63 electrically connected to the N-type semiconductor layer 51 are formed on the epitaxial structure 5;

Finally, a metal adhesive layer 31, a metal reflective layer 32, a metal barrier layer 33 and a thermally conductive metal layer 34 are sequentially deposited on the lower surface of the substrate 4;

The evaporation conditions of the metal bonding layer 31 include: the evaporation rate is 0.5Å/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature;

The evaporation conditions of the metal reflective layer 32 include: the evaporation rate is 5Å/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature;

The evaporation conditions of the metal barrier layer 33 include: the evaporation rate of the first Ti layer is 0.5Å/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature; the evaporation rate of the first Pt layer is 0.7Å/S. , the vacuum degree is 1E-6pa, and the evaporation temperature is room temperature; the evaporation rate of the second Ti layer is 0.5Å/S, the vacuum degree is 1E-6pa, and the evaporation temperature is room temperature; the evaporation rate of the first Ni layer is 6Å/S vacuum degree is 1E-6pa, evaporation temperature is 70℃;

The evaporation conditions of the thermally conductive metal layer 34 include: the evaporation rate is 15Å/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature.

(2) Bonding step with the carrier substrate 2: Provide a carrier substrate 2, fix the LED light-emitting unit on the carrier substrate 2 through an adhesive; and then use the packaging structure 7 to package the light-emitting diode 1.

Example 3

A kind of light-emitting diode 1, except that the metal bonding layer 31 is a Cr layer, the metal reflection layer 32 is an Ag layer, the metal barrier layer 33 is a first Ti layer and a first Pt layer in sequence, and the thermal conductive metal is a Cu layer, other conditions are the same. example 1.

A semiconductor device, including the light-emitting diode 1 of this embodiment, and a carrying substrate 2 and a packaging structure 7 for carrying the light-emitting diode 1;

The preparation method of the semiconductor device is the same as that in Example 2.

Example 4

A kind of light-emitting diode 1, except that the metal bonding layer 31 is a Ti layer and a Rh layer, the thickness of the Ti layer is 15Å, and the thickness of the Rh layer is 20Å; the metal reflection layer 32 is an Al layer and an Ag layer, the thickness of the Al layer is 10KÅ, The thickness of the Ag layer is 10KÅ; the thermally conductive metal layer 34 is an Au layer and a Cu layer, the thickness of the Au layer is 10KÅ, and the thickness of the Cu layer is 10KÅ. Other conditions are the same as in Embodiment 1.

A semiconductor device, including the light-emitting diode 1 of this embodiment, and a carrying substrate 2 for carrying the light-emitting diode 1;

The preparation method of the semiconductor device is the same as that in Example 2.

Example 5

A light-emitting diode 1, except that the thickness of the metal bonding layer 31 is 30Å, the thickness of the metal reflection layer 32 is 18KÅ, the thickness of the first Ti layer is 1.5KÅ, the thickness of the first Pt layer is 2.5KÅ, and the thickness of the second Ti layer The thickness of the first Ni layer is 0.7KÅ, the thickness of the first Ni layer is 5KÅ; the thickness of the thermally conductive metal layer 34 is 15KÅ; the evaporation rate of the metal bonding layer 31 is 0.4Å/S; the evaporation rate of the metal reflective layer 32 is 6Å/ S; in the metal barrier layer 33, the evaporation rate of the first Ti layer is 0.6Å/S, the evaporation rate of the first Pt layer is 0.8Å/S, and the evaporation rate of the second Ti layer is 0.4Å/S. The evaporation rate of the first Ni layer is 5.5Å/S; the evaporation rate of the thermally conductive metal layer 34 is 16Å/S. Other conditions are the same as in Embodiment 1.

A semiconductor device, including the light-emitting diode 1 of this embodiment, and a carrying substrate 2 and a packaging structure 7 for carrying the light-emitting diode 1;

The preparation method of the semiconductor device is the same as that in Example 2.

Example 6

A light-emitting diode 1, except that the thickness of the metal bonding layer 31 is 50Å, the thickness of the metal reflection layer 32 is 20KÅ, the thickness of the first Ti layer is 2KÅ, the thickness of the first Pt layer is 1.5KÅ, and the thickness of the second Ti layer is The thickness is 0.3KÅ, the thickness of the first Ni layer is 4KÅ; the thickness of the thermally conductive metal layer 34 is 16KÅ; the evaporation rate of the metal bonding layer 31 is 0.6Å/S; the evaporation rate of the metal reflective layer 32 is 8Å/S ; In the metal barrier layer 33, the evaporation rate of the first Ti layer is 0.4Å/S, the evaporation rate of the first Pt layer is 0.6Å/S, the evaporation rate of the second Ti layer is 0.6Å/S, and the evaporation rate of the first Ti layer is 0.6Å/S. The evaporation rate of a Ni layer is 6.5 Å/S; the evaporation rate of the thermally conductive metal layer 34 is 14 Å/S. Other conditions are the same as in Embodiment 1.

A semiconductor device, including the light-emitting diode 1 of this embodiment, and a carrying substrate 2 and a packaging structure 7 for carrying the light-emitting diode 1;

The preparation method of the semiconductor device is the same as that in Example 2.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention, but not to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions recorded in the foregoing embodiments, or to equivalently replace some or all of the technical features; and these modifications or substitutions do not deviate from the essence of the corresponding technical solutions from the technical solutions of the embodiments of the present invention. range.

Claims (9)

1. The heat conducting layer of the light-emitting diode is characterized by comprising a metal bonding layer, a metal reflecting layer, a metal blocking layer and a heat conducting metal layer which are sequentially arranged;

the thickness of the metal reflecting layer is 16K-20K A;

the thickness of the metal barrier layer is 4.7K-10.3K;

the heat conduction metal layer comprises an Au layer and/or a Cu layer;

the thickness of the heat conduction metal layer is 9K A-20K A.

2. The thermally conductive layer of a light emitting diode of claim 1, wherein the metallic bonding layer comprises at least one of a Ti layer, a Cr layer, and a Rh layer;

and/or the thickness of the metal bonding layer is 10A-50A.

3. The thermally conductive layer of a light emitting diode of claim 1, wherein the metal reflective layer comprises an Al layer and/or an Ag layer.

4. The thermally conductive layer of a light emitting diode of claim 1, comprising at least one of the following features (1) - (3):

(1) The metal barrier layer comprises at least one of a Pt layer, a Ti layer and a Ni layer;

(2) The metal barrier layer sequentially comprises a first Ti layer, a first Pt layer, a second Ti layer and a first Ni layer, and the first Ti layer is connected with the metal reflecting layer;

(3) The thickness of the first Ti layer is 1.5K-2.5K A, the thickness of the first Pt layer is 1.5K-2.5K A, the thickness of the second Ti layer is 0.2K-0.8K A, and the thickness of the first Ni layer is 2K-5K A.

5. A light emitting diode comprising at least:

the LED light-emitting unit at least comprises a substrate and a light-emitting diode, wherein the substrate is provided with an upper surface and a lower surface; the epitaxial structure layer at least comprises an N-type semiconductor layer, a multiple quantum well active layer and a P-type semiconductor layer; the P electrode is arranged on the epitaxial structure layer and is electrically connected with the P-type semiconductor layer; the N electrode is arranged on the epitaxial structure layer and is electrically connected with the N-type semiconductor layer;

and a heat conducting layer, which is arranged on the lower surface of the substrate and sequentially comprises the metal bonding layer, the metal reflecting layer, the metal blocking layer and the heat conducting metal layer according to any one of claims 2-4 in the direction away from the epitaxial structure layer.

6. A semiconductor device comprising the light-emitting diode according to claim 5, and a carrier substrate for carrying the light-emitting diode.

7. A method of manufacturing a semiconductor device, comprising:

(1) LED light emitting unit forming step: the method comprises the steps of epitaxial structure growth, electrode manufacturing and heat conduction layer deposition, and specifically comprises the following steps:

firstly, providing a growth substrate, comprising an upper surface and a lower surface, and epitaxially growing an N-type semiconductor layer, a multiple quantum well active layer and a P-type semiconductor layer on the upper surface of the substrate;

secondly, manufacturing an electrode, and forming a P electrode electrically connected with the P-type semiconductor layer and an N electrode electrically connected with the N-type semiconductor layer on the epitaxial structure;

finally, sequentially depositing the metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat conducting metal layer according to any one of claims 2-4 on the lower surface of the substrate;

(2) Bonding with the bearing substrate: and providing a bearing substrate, and fixing the LED luminous unit on the bearing substrate through an adhesive.

8. The method of manufacturing a semiconductor device according to claim 7, comprising at least one of the following features (1) to (4):

(1) The evaporation conditions of the metal bonding layer comprise: the evaporation rate is 0.4-0.6A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;

(2) The evaporation conditions of the metal reflecting layer comprise: the evaporation rate is 4.5A/S-5.5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;

(3) The evaporation conditions of the metal barrier layer comprise: the evaporation rate is 0.5A/S-5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-70 ℃;

(4) The evaporation conditions of the heat conduction metal layer comprise: the evaporation rate is 14A/S-16A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃.

9. The method according to claim 8, wherein in the metal barrier layer, a deposition rate of the Ti layer is 0.4 a/S to 0.6 a/S, a deposition rate of the Pt layer is 0.6 a/S to 0.8 a/S, and a deposition rate of the Ni layer is 5.5 a/S to 6.5 a/S.