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CN114005764B - 一种芯片mos管导线焊接方法 - Google Patents

一种芯片mos管导线焊接方法 Download PDF

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CN114005764B
CN114005764B CN202111295071.5A CN202111295071A CN114005764B CN 114005764 B CN114005764 B CN 114005764B CN 202111295071 A CN202111295071 A CN 202111295071A CN 114005764 B CN114005764 B CN 114005764B
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CN114005764A (zh
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张彩根
沈水芳
贝利红
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Huzhou Dongke Electronic Quartz Co ltd
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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Abstract

本发明公开了一种芯片mos管导线焊接方法，利用铝线(1)机将两根直径280‑320um的铝线(1)焊接在芯片mos管的发射极上，利用铜线机将一根直径35‑38um的铜线(2)焊接在芯片mos管的控制极上；所述铜线(2)的端头经过校直和软化处理；所述校直和软化处理用到的装置，包括导引管(3)，导引管(3)的外侧设有气管(5)，气管(5)的两端均设有挡板(6)，通过挡板(6)使气管(5)与导引管(3)之间形成空腔(7)，空腔(7)内设有与导引管(3)贴合的加热单元(8)，加热单元(8)的一侧设有管接头(9)，管接头(9)通过气阀(10)连接氮气罐(11)。本发明具有良品率高和能耗低的优点。

Description

一种芯片mos管导线焊接方法
技术领域
本发明属于芯片mos管领域，尤其涉及一种芯片mos管导线焊接方法。
背景技术
如图1所示，图1中S是控制极、G是发射极，芯片mos管中具有两路铜制的导线，其中一路导线焊接在芯片的发射极上。现由的导线焊接方法是利用铝线机将两路铝制的导线分别焊接在发射极和控制极上，发射极上的一路导线为两根直径300um的铝线，控制极上的另一路导线为一根直径300um的铝线，这是行业内固有的焊接方法，已经沿用多年，但是在实际使用过程中发现，焊接所得产品的不良率较高。因此，现有导线焊接方法存在不良品率较高的缺陷。
发明内容
本发明的目的在于，提供一种芯片mos管导线焊接方法。本发明具有不良品率低和能耗低的优点。
本发明的技术方案：一种芯片mos管导线焊接方法，利用铝线机将两根直径280-320um的铝线焊接在芯片mos管的发射极上，利用铜线机将一根直径35-38um的铜线焊接在芯片mos管的控制极上。
前述的芯片mos管导线焊接方法中，所述铝线的直径300um，所述铜线的直径38um。
前述的芯片mos管导线焊接方法中，所述铜线的端头经过校直处理。
前述的芯片mos管导线焊接方法中，所述校直和软化处理用到的装置，包括导引管，导引管的外周面上设有多个气孔，导引管的外侧设有气管，气管的两端均设有挡板，通过挡板使气管与导引管之间形成空腔，空腔内设有与导引管贴合的加热单元，加热单元的一侧设有与气管连接的管接头，管接头通过气阀连接氮气罐。
前述的芯片mos管导线焊接方法中，所述导引管的一端伸出气管。
与现有技术相比，本发明通过反复的研究和实验，发现导致产品不良率较高的原因主要控制极的焊接区域过小引起的，仅仅略大于铝线直径，将铝线焊接在控制极上时，铝线端部受超声挤压扩大成饼状，很容易超出焊接区域范围，可能导致相邻电路受损，也可能控制极与相邻电路短路，导致良品率较低，但这种焊接超范围并不能直接被观察到，需要借助显微镜才能发现，导致控制极焊接超范围的现象一直没有被注意到。此外，控制极焊接超范围也不是引起产品不良的唯一原因，对不良品进行检查时，经常将不良原因归于其它因素，这也导致控制极焊接超范围导致不良品这个问题一直被掩盖。
基于上述发现的导致不良品产生的原因，结合芯片mos管上的电流分布分析，发现控制极上通过的电流远远小于发射极上通过的电流，根本不需要用直径300um的铝线承载，用直径35um以上的铜线完全满足控制极的通电电流使用，因此，本发明采用细的铜线代替粗的铝线作为控制极上的导线，利用现有的铜线机将铜线焊接在控制极上，由于铜线细，将铜线焊接在控制极上时不易出现焊接超范围，不易对产品造成损伤，不良品率低。
此外，本发明在现有铜线机的上新增了对铜丝进行校直和软化处理的装置，进一步的降低产品的不良率。现有铜线机的工作原理，是利用卷状的铜丝，铜丝的一端引出至控制极，焊接后，切断，在控制极上形成作为导线的铜线，然后继续引出、焊接、切断，循环进行。申请人发现，由于铜丝内外圈的内径不同，曲率不同，铜丝不断引出和不断切断后所形成的端头翘曲的程度不同，难以保证所有端头全部对准控制极，对铜线机进行产前调试时，也只能保证当前铜丝端头对准控制极的中心位置，在后续生产中，新生成的端头逐渐的就会发生偏移控制极中心，也有一定的可能偏离出控制极的焊接区域(是否偏出取决于卷状铜丝内外圈直径差异，卷绕厚度越大越容易偏出)，导致不良率增加。本发明利用导引管校直铜丝，使穿过导引管后的铜丝各个位置曲率接近，甚至相同，利用导引管内的加热单元消除铜丝上的应力，避免铜丝回弹，从而保证所有端头都能对准控制极的中心位置不发生偏移，从而焊接不易超出范围，产品良品率高。
更进一步的，本发明通过在导引管的外侧设置气管和挡板，减少加热单元的热量流失，降低了能耗。通过氮气罐向气管内通氮气，利用气阀控制氮气流速，确保氮气从导引管的两端流出，保证铜丝的加热部分不与氧气接触，避免铜丝氧化，确保铜丝导电性良好，这也保证了产品的良品率高。经统计,本发明可将不良率降低至原有水平的60％左右。
因此，本发明具有不良品率低和能耗低的优点。
附图说明
图1是导线在芯片mos管上的焊接示意图。
图2是装置的正视图。
附图中的标记为：1-铝线，2-铜线，3-导引管，4-气孔，5-气管，6-挡板，7-空腔，8-加热单元，9-管接头，10-气阀，11-氮气罐。
具体实施方式
下面结合附图和实施例对本发明作进一步的说明，但并不作为对本发明限制的依据。
实施例。一种芯片mos管导线焊接方法，芯片名称PW11N70A，如图1所示，利用铝线1机将两根直径300um的铝线1焊接在芯片mos管的发射极(图1中S所示)上，利用铜线2机将一根直径38um的铜线2焊接在芯片mos管的控制极(图1中G所示)上。
所述铜线2的端头经过校直和软化处理。
如图2所示，所述校直和软化处理用到的装置，包括导引管3，导引管3的外周面上设有多个气孔4，导引管3的外侧设有气管5，气管5的两端均设有挡板6，通过挡板6使气管5与导引管3之间形成空腔7，空腔7内设有与导引管3贴合的电热丝式的加热单元8，加热单元8的一侧设有与气管5连接的管接头9，管接头9通过气阀10连接氮气罐11。气管5和导引管3的材质均为马氏体不锈钢。
所述导引管3的一端伸出气管5，伸出部分用于继续保持对铜丝导向，并提高铜丝的冷却速度。
现有铜线机的结构主要包括送丝机构、导向管、剪断机构、超声机构、变幅杆和瓷嘴。送丝机构负责铜丝的前移，使铜丝的端部穿过导向管。导向管的指向焊接区域，使铜丝从导向管出来后抵达焊接区域。超声机构产生超声能量，并通过变幅杆超声能量聚集在瓷嘴，瓷嘴下压后，铜丝的端部在瓷嘴的带动下高频振动与控制极焊接。然后利用剪断机构剪断铜丝，即在控制极上形成一根焊接好的铜线2。
现有铜线机在使用过程中发现，由于铜丝卷状安装在铜线机上，铜丝在送丝机构作用下展开后实际存在应力，从导向管伸出后恢复弯曲，随着铜丝卷的逐层消耗，展开来的铜丝曲率逐渐改变，从而导致从导向管出来的铜丝难以每次都准确的抵达焊接区域。
为使铜丝每次都能准确抵达焊接区域，本发明在现有铜线机上增加了装置，所述装置固定在送丝机构与导向管之间，靠近导向管，用于消除铜线应力，使铜线保持直线，使铜线可控。
经送丝机构出来的铜线穿过导引管3后再进入到导向管，加热单元8将铜丝加热500-600℃，消除铜丝应力。打开气阀10，使氮气罐11中的氮气进入到空腔7中，通过气阀10调节氮气速度，要求氮气从导引管3的两端排出，避免导引管中氧气的存在，避免铜丝氧化。

Claims (3)

1.一种芯片mos管导线焊接方法，利用铝线机将两根直径280-320um的铝线(1)焊接在芯片mos管的发射极上，其特征在于：利用铜线机将一根直径35-38um的铜线(2)焊接在芯片mos管的控制极上；
所述铜线(2)的端头经过校直和软化处理；
所述校直和软化处理用到的装置，包括导引管(3)，导引管(3)的外周面上设有多个气孔(4)，导引管(3)的外侧设有气管(5)，气管(5)的两端均设有挡板(6)，通过挡板(6)使气管(5)与导引管(3)之间形成空腔(7)，空腔(7)内设有与导引管(3)贴合的加热单元(8)，加热单元(8)的一侧设有与气管(5)连接的管接头(9)，管接头(9)通过气阀(10)连接氮气罐(11)。
2.根据权利要求1所述的芯片mos管导线焊接方法，其特征在于：所述铝线(1)的直径300um，所述铜线(2)的直径38um。
3.根据权利要求1所述的芯片mos管导线焊接方法，其特征在于：所述导引管(3)的一端伸出气管(5)。
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