CN114000105B - A kind of preparation method of Ta-C diamond-like carbon coating and its application - Google Patents
A kind of preparation method of Ta-C diamond-like carbon coating and its application Download PDFInfo
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- 239000011248 coating agent Substances 0.000 title claims abstract description 98
- 238000000576 coating method Methods 0.000 title claims abstract description 98
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 229910052786 argon Inorganic materials 0.000 claims abstract description 47
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 239000013077 target material Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000010849 ion bombardment Methods 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000005553 drilling Methods 0.000 claims abstract description 6
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 38
- 230000008021 deposition Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005237 degreasing agent Methods 0.000 description 3
- 239000013527 degreasing agent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000007545 Vickers hardness test Methods 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- B23B51/00—Tools for drilling machines
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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Abstract
Description
技术领域technical field
本申请涉及PCB钻孔领域,更具体地说,它涉及一种Ta-C类金刚石涂层的制备方法及在PCB微径刀具的应用。The present application relates to the field of PCB drilling, and more particularly, to a preparation method of a Ta-C diamond-like coating and its application in a PCB micro-diameter tool.
背景技术Background technique
PCB是印刷电路板的简称,是电子元器件的支撑体,也是所有电子信息产品不可缺少的基本构成要件,随着移动电话、笔记本式电脑等产品的小型化和高速化,对PCB板的精细化制作越发被重视,尤其是在处在5G时代的今天,5G产品对于信号的完整性、板材可加工性及可靠性都有了很多新的要求,以满足通讯基站、天线、无线通讯设备的设计性能要求。PCB is the abbreviation of printed circuit board. It is the support of electronic components and an indispensable basic component of all electronic information products. With the miniaturization and high speed of mobile phones, notebook computers and other products, the fine More and more attention is paid to chemical production, especially in today's 5G era, 5G products have many new requirements for signal integrity, sheet machinability and reliability to meet the needs of communication base stations, antennas, and wireless communication equipment. Design performance requirements.
在印制电路板的制造工艺中,一个关键的步骤是钻通孔,通孔即在各层间的电气连接通道和器件的固定或定位孔。由于5G产品要求的特殊性,PCB板的布线密度越来越高,通孔的孔径也越来越小,这就需要钻通孔所用的刀具例如微径钻头和微径锣刀的尺寸更小,一般PCB板专用微径钻头的尺寸在¢0.1-0.25mm之间,微径锣刀的尺寸在¢0.8-2.0mm之间。In the manufacturing process of printed circuit boards, a key step is to drill through holes, which are electrical connection channels between layers and fixing or positioning holes for devices. Due to the special requirements of 5G products, the wiring density of PCB boards is getting higher and higher, and the diameter of through holes is also getting smaller and smaller, which requires the tools used for drilling through holes, such as micro-diameter drills and micro-diameter gong knives, to be smaller in size , Generally, the size of micro-diameter drill bits for PCB boards is between ¢0.1-0.25mm, and the size of micro-diameter gong knives is between ¢0.8-2.0mm.
由于微径钻头和微径锣刀的尺寸小,使得其使用寿命较短,在钻孔600个左右就会因为磨损过度而需要更换,而企业生产PCB板需要钻大量的通孔,频繁更换微径刀具会拖慢生产进度,而且增大生产成本。Due to the small size of micro-diameter drill bits and micro-diameter gong knives, their service life is short. After drilling about 600 holes, they will need to be replaced due to excessive wear. Enterprises need to drill a large number of through holes to produce PCB boards, and frequently replace micro-diameter drills. Diameter tools slow down production and increase production costs.
发明内容SUMMARY OF THE INVENTION
为了提高微径刀具的使用寿命,降低生产成本,本申请提供一种Ta-C类金刚石涂层的制备方法及其应用。In order to improve the service life of the micro-diameter tool and reduce the production cost, the present application provides a preparation method and application of a Ta-C diamond-like coating.
第一方面,本申请提供一种类金刚石涂层的制备方法,采用如下的技术方案:First aspect, the application provides a kind of preparation method of diamond-like coating, adopts following technical scheme:
一种Ta-C类金刚石涂层的制备方法,包括以下步骤:A preparation method of Ta-C diamond-like coating, comprising the following steps:
S1.清洗基材;S1. Cleaning the substrate;
S2.采用磁过滤真空阴极电弧技术,将基材放入真空环境中,然后通入氩气,真空室压力0.0001~0.0003mbar,开偏压,基材偏压为550~650V,进行离子轰击,时间1600~1900s;S2. Using magnetic filtration vacuum cathode arc technology, the substrate is placed in a vacuum environment, and then argon gas is introduced, the vacuum chamber pressure is 0.0001~0.0003mbar, the bias voltage is turned on, and the substrate bias voltage is 550~650V, and ion bombardment is carried out. Time 1600~1900s;
S3.关氩气,抽真空,再通入氩气,然后以碳靶为靶材,基材偏压300~500V,碳靶电流为60~70A,沉积200~350s;S3. Turn off the argon gas, evacuate, and then pass in the argon gas, and then use the carbon target as the target material, the substrate bias is 300~500V, the carbon target current is 60~70A, and the deposition is 200~350s;
S4.梯度式降低基材偏压至30~60V,然后继续沉积1800~2100s;S4. Gradiently reduce the substrate bias to 30~60V, and then continue to deposit for 1800~2100s;
S5.冷却,得到类金刚石涂层。S5. Cool to obtain a diamond-like coating.
通过采用上述技术方案,在基材上覆盖Ta-C类金刚石涂层,Ta-C类金刚石涂层以sp3键为主,sp3键含量高于70%,使得涂层的结构稳定性高。By adopting the above technical scheme, the substrate is covered with a Ta-C diamond-like carbon coating. The Ta-C diamond-like carbon coating is dominated by sp3 bonds, and the content of sp3 bonds is higher than 70%, so that the structural stability of the coating is high.
通过S2步骤对基材进行蚀刻,增大Ta-C类金刚石涂层与基材的接触面积,提高涂层与基材的结合力,S4步骤的梯度式降低基材偏压,有助于提高Ta-C类金刚石涂层中sp3键的比例,使得涂层的硬度更高,耐磨性能更好,从而提高基材的耐磨损能力,使得基材的尺寸可以做得更小的同时,基材的使用寿命能够提高,适合用于需多次对PCB板钻孔的微径刀具。The substrate is etched through the S2 step to increase the contact area between the Ta-C diamond-like carbon coating and the substrate, and to improve the bonding force between the coating and the substrate. The gradient of the S4 step reduces the substrate bias, which helps to improve the The ratio of sp3 bonds in the Ta-C diamond-like carbon coating makes the coating higher in hardness and better in wear resistance, thereby improving the wear resistance of the substrate and making the size of the substrate smaller. The service life of the substrate can be increased, and it is suitable for micro-diameter tools that need to drill holes on PCB boards for many times.
优选的,在S2步骤中,氩气的通入流量为100~150sccm。Preferably, in step S2, the flow rate of argon gas is 100-150 sccm.
通过采用上述技术方案,上述氩气通入流量有助于控制对基材的蚀刻程度,从而提高Ta-C类金刚石涂层与基材的结合力。By adopting the above technical solution, the above-mentioned argon gas flow rate helps to control the etching degree of the substrate, thereby improving the bonding force between the Ta-C diamond-like carbon coating and the substrate.
优选的,在S3步骤中,氩气的通入流量为5~10sccm。Preferably, in step S3, the flow rate of argon gas is 5-10 sccm.
通过采用上述技术方案,上述氩气通入流量有助于Ta-C类金刚石涂层沉积更加均匀,从而提高Ta-C类金刚石涂层的硬度和耐磨性。By adopting the above technical scheme, the above-mentioned argon gas flow rate helps to deposit the Ta-C diamond-like coating more uniformly, thereby improving the hardness and wear resistance of the Ta-C diamond-like coating.
优选的,S3步骤具体为,关闭氩气,抽真空至真空度达到0.0001~0.0003mbar,然后再通入氩气,氩气的通入流量为5~10sccm,调节基材偏压350~400V,待真空度达到0.042~0.050mbar,以碳靶为靶材,碳靶电流60~70A,沉积250~350s。Preferably, step S3 is specifically as follows: turning off argon gas, evacuation until the degree of vacuum reaches 0.0001~0.0003mbar, and then feeding argon gas, the feeding flow rate of argon gas is 5~10sccm, and adjusting the bias voltage of the substrate to 350~400V, When the vacuum degree reaches 0.042~0.050mbar, the carbon target is used as the target material, the carbon target current is 60~70A, and the deposition is 250~350s.
通过采用上述技术方案,调节至合适的氩气氛围再进行碳沉积,使得类金刚石涂层与基材的结合力更高,从而进一步提高涂层的硬度和耐磨性。By adopting the above technical solution, carbon deposition is carried out after adjusting to a suitable argon atmosphere, so that the bonding force between the diamond-like carbon coating and the substrate is higher, thereby further improving the hardness and wear resistance of the coating.
优选的,S4步骤具体为:在S3步骤的基材上将偏压调整为180~250V,沉积200~350s,然后将基材偏压调整为70~150V,沉积600~900s,然后将基材偏压调整为40~60V,然后继续沉积1800~2100s。Preferably, step S4 is specifically: adjusting the bias voltage to 180-250V on the substrate in step S3, depositing 200-350s, then adjusting the substrate bias to 70-150V, depositing 600-900s, and then depositing the substrate The bias voltage was adjusted to 40~60V, and then deposition was continued for 1800~2100s.
通过采用上述技术方案,实现梯度式降低基材偏压,控制类金刚石涂层的形成速率在合适的范围,从而提高类金刚石涂层的结构稳定性。By adopting the above technical solution, the bias voltage of the substrate can be reduced in a gradient manner, and the formation rate of the diamond-like coating can be controlled within an appropriate range, thereby improving the structural stability of the diamond-like coating.
优选的,S4步骤具体为:在S3步骤的基材上将偏压调整为200~205V,沉积250~260s,然后将基材偏压调整为95~105V,沉积770~780s,然后将基材偏压调整为40~45V,然后继续沉积1900~1950s。Preferably, step S4 is specifically: adjusting the bias voltage to 200~205V on the substrate in step S3, depositing 250~260s, then adjusting the bias voltage of the substrate to 95~105V, depositing 770~780s, and then depositing the substrate The bias voltage was adjusted to 40~45V, and then deposition continued for 1900~1950s.
通过采用上述技术方案,进一步控制类金刚石涂层的形成速率,sp3键的比例进一步提高,约束纳米石墨晶的形成,sp3 键更加不易向sp2 键转化,从而使得类金刚石涂层在高温下仍能保持稳定,即耐热性更佳。By adopting the above technical scheme, the formation rate of the diamond-like carbon coating is further controlled, the proportion of sp3 bonds is further increased, the formation of nano-graphite crystals is restricted, and the sp3 bonds are more difficult to convert to sp2 bonds, so that the diamond-like carbon coating can still be used at high temperatures. Stable, that is, better heat resistance.
第二方面,本申请提供一种Ta-C类金刚石涂层,采用如下的技术方案:Second aspect, the application provides a kind of Ta-C diamond-like coating, adopts following technical scheme:
一种Ta-C类金刚石涂层,所述类金刚石涂层的厚度为0.1~0.3μm。A Ta-C diamond-like coating, the thickness of the diamond-like coating is 0.1-0.3 μm.
通过采用上述技术方案,上述涂层厚度较小,可以不增加基材过多的厚度的同时,给基材提供较高的硬度和耐磨性能。By adopting the above technical solution, the thickness of the coating layer is relatively small, and the substrate can be provided with higher hardness and wear resistance without increasing the excessive thickness of the substrate.
第三方面,本申请提供一种Ta-C类金刚石涂层在PCB微径刀具的应用,采用如下的技术方案:The third aspect, the application provides a kind of application of Ta-C diamond-like coating in PCB micro-diameter cutter, adopts following technical scheme:
一种Ta-C类金刚石涂层在PCB微径刀具的应用,所述PCB微径刀具的表面覆盖有Ta-C类金刚石涂层,所述PCB微径刀具为微径钻头或微径锣刀,所述PCB微径刀具用于对PCB钻孔。A kind of application of Ta-C diamond-like carbon coating in PCB micro-diameter tool, the surface of the PCB micro-diameter tool is covered with Ta-C diamond-like coating, and the PCB micro-diameter tool is a micro-diameter drill bit or a micro-diameter gong knife , the PCB micro-diameter tool is used for drilling PCB holes.
通过采用上述技术方案,PCB微径刀具涂覆有Ta-C类金刚石涂层,可以提高PCB微径刀具的表面硬度和降低表面摩擦系数,且Ta-C类金刚石涂层适合于PCB微径刀具这类尺寸小的基材,从而提高PCB微径刀具的使用寿命,降低成本。By adopting the above technical solution, the PCB micro-diameter tool is coated with a Ta-C diamond-like carbon coating, which can improve the surface hardness of the PCB micro-diameter tool and reduce the surface friction coefficient, and the Ta-C diamond-like carbon coating is suitable for the PCB micro-diameter tool. Such small-sized substrates can improve the service life of PCB micro-diameter tools and reduce costs.
综上所述,本申请具有以下有益效果:To sum up, the present application has the following beneficial effects:
1、由于本申请在基材上覆盖Ta-C类金刚石涂层,Ta-C类金刚石涂层以sp3键为主,sp3键含量高于70%,使得涂层的结构稳定性高;通过S2步骤对基材进行蚀刻,增大Ta-C类金刚石涂层与基材的接触面积,提高涂层与基材的结合力;S4步骤的梯度式降低基材偏压,有助于提高Ta-C类金刚石涂层中sp3键的比例,使得涂层的硬度更高,耐磨性能更好,从而提高基材的耐磨损能力,使得基材的尺寸可以做得更小的同时,基材的使用寿命能够提高,适合用于需多次对PCB板钻孔的微径刀具。1. Since the application covers the Ta-C diamond-like carbon coating on the substrate, the Ta-C diamond-like carbon coating is dominated by sp3 bonds, and the sp3 bond content is higher than 70%, which makes the structural stability of the coating high; through S2 step to etch the substrate, increase the contact area between the Ta-C diamond-like carbon coating and the substrate, and improve the bonding force between the coating and the substrate; the gradient of step S4 reduces the substrate bias, which helps to improve the Ta-C The proportion of sp3 bonds in the C diamond-like coating makes the coating higher in hardness and better in wear resistance, thereby improving the wear resistance of the substrate, so that the size of the substrate can be made smaller. The service life can be improved, and it is suitable for micro-diameter tools that need to drill the PCB board many times.
2、本申请采用控制类金刚石涂层的形成速率的方法,使得类金刚石涂层在高温下仍能保持稳定,即耐热性更佳。2. The present application adopts the method of controlling the formation rate of the diamond-like coating, so that the diamond-like coating can still remain stable under high temperature, that is, the heat resistance is better.
附图说明Description of drawings
图1为本申请提供的表面覆盖有类金刚石涂层PCB微径刀具。FIG. 1 provides a surface covered with diamond-like coating PCB micro-diameter tool provided for this application.
标记说明:1、基材;2、Ta-C类金刚石涂层。Marking description: 1. Substrate; 2. Ta-C diamond-like carbon coating.
具体实施方式Detailed ways
以下结合实施例对本申请作进一步详细说明。The present application will be further described in detail below with reference to the examples.
清洗液由除蜡水和除油剂按体积比1:2配制而成,除蜡水和除油剂均选购自广东红日星实业有限公司,除蜡水型号RS-86b,除油剂型号ITN-709。The cleaning solution is made up of wax removal water and degreasing agent in a volume ratio of 1:2. Both wax removal water and degreasing agent are purchased from Guangdong Hongrixing Industrial Co., Ltd., wax removal water model RS-86b, degreasing agent Model ITN-709.
实施例Example
实施例1Example 1
一种Ta-C类金刚石涂层在PCB微径刀具的应用,包括基材1和涂覆于基材1表面的类金刚石涂层2,其中基材1为PCB微径刀具中的PCB微径钻头,PCB微径钻头的刀刃径为0.2mm。An application of a Ta-C diamond-like carbon coating in a PCB micro-diameter tool, comprising a
一种Ta-C类金刚石涂层的制备方法,包括以下步骤:A preparation method of Ta-C diamond-like coating, comprising the following steps:
S1.将基材放入清洗液中,超声8min,超声频率28kHz。S1. Put the substrate into the cleaning solution, ultrasonic for 8min, ultrasonic frequency 28kHz.
S2.采用直角弯管形磁过滤直流真空阴极电弧沉积设备,将基材放入真空室中,待真空度达到0.0001mbar后,通入氩气,氩气流量为100sccm,再进行离子轰击,基材偏压550V,时间1600s;S2. Use right-angle elbow-shaped magnetic filtration DC vacuum cathode arc deposition equipment, put the substrate into a vacuum chamber, and after the vacuum reaches 0.0001mbar, pass argon gas, and the argon gas flow rate is 100sccm, and then carry out ion bombardment. Material bias 550V, time 1600s;
S3.关氩气,抽真空,待真空度达到0.0001mbar后,通入氩气,氩气流量为5sccm,通入氩气的同时以碳靶为靶材,基材偏压300V,碳靶电流60A,沉积200s;S3. Turn off the argon gas, evacuate, and after the vacuum degree reaches 0.0001mbar, pass in argon gas, the flow rate of argon gas is 5sccm, while the argon gas is passed in, the carbon target is used as the target material, the substrate bias is 300V, and the carbon target current is 60A, deposition 200s;
S4.在S3步骤的基材上将偏压调整为180V,沉积200s,然后将基材偏压调整为70V,沉积600s,然后将基材偏压调整为30V,然后继续沉积1800s;S4. On the substrate in step S3, adjust the bias voltage to 180V, deposit 200s, then adjust the substrate bias to 70V, deposit 600s, then adjust the substrate bias to 30V, and then continue to deposit for 1800s;
S5.冷却,待真空室温度降至100℃以下后,通入大气,将基材取出,基材上得到Ta-C类金刚石涂层,Ta-C类金刚石涂层的厚度为0.1μm。S5. Cooling, after the temperature of the vacuum chamber drops below 100°C, the atmosphere is introduced, the substrate is taken out, and a Ta-C diamond-like carbon coating is obtained on the substrate, and the thickness of the Ta-C diamond-like carbon coating is 0.1 μm.
实施例2Example 2
一种Ta-C类金刚石涂层在PCB微径刀具的应用,包括基材1和涂覆于基材1表面的类金刚石涂层2,其中基材1为PCB微径刀具中的PCB微径钻头,PCB微径钻头的刀刃径为0.2mm。An application of a Ta-C diamond-like carbon coating in a PCB micro-diameter tool, comprising a
一种Ta-C类金刚石涂层的制备方法,包括以下步骤:A preparation method of Ta-C diamond-like coating, comprising the following steps:
S1.将基材放入清洗液中,超声8min,超声频率28kHz。S1. Put the substrate into the cleaning solution, ultrasonic for 8min, ultrasonic frequency 28kHz.
S2.采用直角弯管形磁过滤直流真空阴极电弧沉积设备,将基材放入真空室中,待真空度达到0.0003mbar后,通入氩气,氩气流量为150sccm,再进行离子轰击,基材偏压650V,时间2100s;S2. Use right-angle elbow-shaped magnetic filter DC vacuum cathode arc deposition equipment, put the substrate into a vacuum chamber, and after the vacuum degree reaches 0.0003mbar, pass argon gas, and the flow rate of argon gas is 150sccm, and then carry out ion bombardment. Material bias 650V, time 2100s;
S3.关氩气,抽真空,待真空度达到0.0001mbar后,通入氩气,氩气流量为10sccm,通入氩气的同时以碳靶为靶材,基材偏压500V,碳靶电流70A,沉积350s;S3. Turn off the argon gas, evacuate, and after the vacuum degree reaches 0.0001mbar, pass in the argon gas, the flow rate of the argon gas is 10sccm, the carbon target is used as the target material while the argon gas is passed in, the substrate bias is 500V, and the carbon target current is 70A, deposition 350s;
S4.在S3步骤的基材上将偏压调整为250V,沉积350s,然后将基材偏压调整为150V,沉积900s,然后将基材偏压调整为60V,然后继续沉积2100s;S4. On the substrate in step S3, adjust the bias voltage to 250V, deposit 350s, then adjust the substrate bias to 150V, deposit 900s, then adjust the substrate bias to 60V, and then continue to deposit for 2100s;
S5.冷却,待真空室温度降至100℃以下后,通入大气,将基材取出,基材上得到Ta-C类金刚石涂层,Ta-C类金刚石涂层的厚度为0.29μm。S5. Cooling, after the temperature of the vacuum chamber drops below 100° C., the atmosphere is introduced, the substrate is taken out, and a Ta-C diamond-like carbon coating is obtained on the substrate, and the thickness of the Ta-C diamond-like carbon coating is 0.29 μm.
实施例3Example 3
一种Ta-C类金刚石涂层在PCB微径刀具的应用,包括基材1和涂覆于基材1表面的类金刚石涂层2,其中基材1为PCB微径刀具中的PCB微径钻头,PCB微径钻头的刀刃径为0.2mm。An application of a Ta-C diamond-like carbon coating in a PCB micro-diameter tool, comprising a
一种Ta-C类金刚石涂层的制备方法,包括以下步骤:A preparation method of Ta-C diamond-like coating, comprising the following steps:
S1.将基材放入清洗液中,超声8min,超声频率28kHz。S1. Put the substrate into the cleaning solution, ultrasonic for 8min, ultrasonic frequency 28kHz.
S2.采用直角弯管形磁过滤直流真空阴极电弧沉积设备,将基材放入真空室中,待真空度达到0.0001mbar后,通入氩气,氩气流量为120sccm,再进行离子轰击,基材偏压600V,时间1700s;S2. Use right-angle elbow-shaped magnetic filtration DC vacuum cathode arc deposition equipment, put the substrate into a vacuum chamber, and after the vacuum reaches 0.0001mbar, pass argon gas, and the argon gas flow rate is 120sccm, and then carry out ion bombardment. Material bias 600V, time 1700s;
S3.关氩气,抽真空,待真空度达到0.0001mbar后,通入氩气,氩气流量为10sccm,通入氩气的同时以碳靶为靶材,基材偏压400V,碳靶电流65A,沉积250s;S3. Turn off the argon gas, evacuate, and after the vacuum degree reaches 0.0001mbar, pass in argon gas, the flow rate of argon gas is 10sccm, and the carbon target is used as the target material while passing in the argon gas, the substrate bias is 400V, and the carbon target current is 65A, deposition 250s;
S4.在S3步骤的基材上将偏压调整为250V,沉积350s,然后将基材偏压调整为150V,沉积900s,然后将基材偏压调整为60V,然后继续沉积2100s;S4. On the substrate in step S3, adjust the bias voltage to 250V, deposit 350s, then adjust the substrate bias to 150V, deposit 900s, then adjust the substrate bias to 60V, and then continue to deposit for 2100s;
S5.冷却,待真空室温度降至100℃以下后,通入大气,将基材取出,基材上得到Ta-C类金刚石涂层,Ta-C类金刚石涂层的厚度为0.22μm。S5. Cooling, after the temperature of the vacuum chamber drops below 100°C, the atmosphere is introduced, the substrate is taken out, and a Ta-C diamond-like carbon coating is obtained on the substrate, and the thickness of the Ta-C diamond-like carbon coating is 0.22 μm.
实施例4Example 4
本实施例与实施例3的区别仅在于,在本实施例中,Ta-C类金刚石涂层的厚度为0.23μm。S3步骤具体为:关闭氩气,抽真空至真空度达到0.0001mbar,然后再通入氩气,氩气的通入流量为5sccm,然后将基材偏压调节至350V,待真空度达到0.042mbar,以碳靶为靶材,碳靶电流65A,沉积250s。The difference between this embodiment and Embodiment 3 is only that, in this embodiment, the thickness of the Ta-C diamond-like carbon coating is 0.23 μm. Step S3 is specifically as follows: turn off the argon gas, evacuate until the vacuum degree reaches 0.0001mbar, and then introduce argon gas with a flow rate of 5sccm, then adjust the substrate bias to 350V, and wait until the vacuum degree reaches 0.042mbar , with a carbon target as the target material, the carbon target current is 65A, and the deposition is 250s.
实施例5Example 5
本实施例与实施例3的区别仅在于,Ta-C类金刚石涂层的厚度为0.22μm。S3步骤具体为:关闭氩气,抽真空至真空度达到0.0003mbar,然后再通入氩气,氩气的通入流量为10sccm,然后将基材偏压调节至基材偏压400V,待真空度达到0.050mbar,以碳靶为靶材,碳靶电流65A,沉积350s。The only difference between this embodiment and Embodiment 3 is that the thickness of the Ta-C diamond-like carbon coating is 0.22 μm. Step S3 is specifically as follows: turn off the argon gas, evacuate until the vacuum degree reaches 0.0003mbar, and then introduce argon gas with a flow rate of 10sccm, then adjust the substrate bias to the substrate bias voltage of 400V, wait for the vacuum The temperature reaches 0.050mbar, the carbon target is used as the target material, the carbon target current is 65A, and the deposition is 350s.
实施例6Example 6
本实施例与实施例5的区别仅在于,类金刚石涂层的厚度为0.20μm。S4步骤具体为:在S3步骤的基材上将偏压调整为200V,沉积250s,然后将基材偏压调整为95V,沉积770s,然后将基材偏压调整为40V,然后继续沉积1950s。The only difference between this embodiment and Embodiment 5 is that the thickness of the diamond-like carbon coating is 0.20 μm. Step S4 is as follows: adjust the bias voltage to 200V on the substrate in step S3, deposit for 250s, then adjust the substrate bias to 95V, deposit 770s, then adjust the substrate bias to 40V, and then continue to deposit for 1950s.
实施例7Example 7
本实施例与实施例5的区别仅在于,类金刚石涂层的厚度为0.20μm。S4步骤具体为:在S3步骤的基材上将偏压调整为205V,沉积260s,然后将基材偏压调整为105V,沉积780s,然后将基材偏压调整为45V,然后继续沉积1900s。The only difference between this embodiment and Embodiment 5 is that the thickness of the diamond-like carbon coating is 0.20 μm. Step S4 is as follows: adjust the bias voltage to 205V on the substrate in step S3, deposit for 260s, then adjust the substrate bias to 105V, deposit for 780s, then adjust the substrate bias to 45V, and then continue to deposit for 1900s.
对比例Comparative ratio
对比例1Comparative Example 1
本对比例与实施例3的区别仅在于,在本对比例中,S2步骤具体为:The difference between this comparative example and Example 3 is only that, in this comparative example, step S2 is specifically:
S2.采用直角弯管形磁过滤直流真空阴极电弧沉积设备,将基材放入真空室中,待真空度达到0.0001mbar后,通入氩气,氩气流量为120sccm,再进行离子轰击,基材偏压400V,时间1700s。S2. Use right-angle elbow-shaped magnetic filtration DC vacuum cathode arc deposition equipment, put the substrate into a vacuum chamber, and after the vacuum reaches 0.0001mbar, pass argon gas, and the argon gas flow rate is 120sccm, and then carry out ion bombardment. The material bias is 400V, and the time is 1700s.
S3步骤具体为:The steps of S3 are as follows:
S3.关氩气,抽真空,待真空度达到0.0001mbar后,通入氩气,氩气流量为10sccm,通入氩气的同时以碳靶为靶材,基材偏压600V,碳靶电流65A,沉积250s。S3. Turn off the argon gas, evacuate, and after the vacuum degree reaches 0.0001mbar, pass in the argon gas, the flow rate of the argon gas is 10sccm, and the carbon target is used as the target material while passing in the argon gas, the substrate bias is 600V, and the carbon target current is 65A, deposition 250s.
对比例2Comparative Example 2
本对比例与实施例3的区别仅在于,在本对比例中,S4步骤具体为:The difference between this comparative example and Example 3 is only that, in this comparative example, step S4 is specifically:
在S3步骤的基材上将偏压直接调整为60V,然后继续沉积2100s。The bias voltage was directly adjusted to 60V on the substrate in step S3, and then deposition was continued for 2100s.
性能检测试验performance test
根据YB/T 4286-2012《金属材料薄板和薄带摩擦系数试验方法》,测试涂层摩擦系数,其中摩擦系数越小代表耐磨性越好,测试结果如表1所示。According to YB/T 4286-2012 "Test Method for Friction Coefficient of Thin Plates and Thin Strips of Metal Materials", the friction coefficient of the coating is tested. The smaller the friction coefficient, the better the wear resistance. The test results are shown in Table 1.
根据GB/T4342-1991《金属显微维氏硬度试验方法》,测试涂层硬度,测试结果如表1所示。According to GB/T4342-1991 "Metal Micro Vickers Hardness Test Method", the hardness of the coating was tested, and the test results are shown in Table 1.
在氩气保护下,将带钻头用类金刚石涂层的钨合金放入管式炉中,加热至800℃,保温30min,冷却后取出,再根据GB/T4342-1991《金属显微维氏硬度试验方法》,测试高温后涂层硬度,并计算高温处理后涂层硬度的衰减率,计算公式为涂层硬度衰减率=(未经高温处理的涂层硬度-高温处理的涂层硬度)/未经高温处理的涂层硬度,涂层硬度衰减率越小代表涂层的耐热性越好,测试结果如表1所示。Under the protection of argon, put the tungsten alloy with diamond-like carbon coating on the drill bit into a tube furnace, heat it to 800 ° C, keep the temperature for 30 minutes, and take it out after cooling. Test method", test the hardness of the coating after high temperature, and calculate the decay rate of the coating hardness after high temperature treatment, the calculation formula is the decay rate of coating hardness = (the hardness of the coating without high temperature treatment - the hardness of the coating treated at high temperature) / For the hardness of the coating without high temperature treatment, the smaller the coating hardness decay rate, the better the heat resistance of the coating. The test results are shown in Table 1.
取覆盖有本申请制得的Ta-C类金刚石涂层的PCB微径钻头,并取不覆盖类金刚石涂层的PCB微径钻头以作为空白组,对PCB板进行钻孔,PCB板厚度为1.0mm,记录PCB微径钻头磨损前总共的钻孔数,测试结果如表2所示。Get the PCB micro-diameter drill bit covered with the Ta-C diamond-like coating obtained by the application, and get the PCB micro-diameter drill bit that does not cover the diamond-like carbon coating as a blank group, and the PCB board is drilled, and the thickness of the PCB board is 1.0mm, record the total number of drill holes before the PCB micro-diameter drill bit wears, and the test results are shown in Table 2.
表1Table 1
表2Table 2
根据表1和表2可知,结合实施例3与空白组,采用Ta-C类金刚石涂层覆盖微径钻头,可以使微径钻头的钻孔数量增多,即微径钻头的使用寿命增加,说明覆盖Ta-C类金刚石涂层后,微径钻头表面耐磨损性能更高。According to Table 1 and Table 2, it can be seen that, in combination with Example 3 and the blank group, the use of Ta-C diamond-like carbon coating to cover the micro-diameter drill bit can increase the number of drill holes of the micro-diameter drill bit, that is, the service life of the micro-diameter drill bit increases. After being covered with Ta-C diamond-like carbon coating, the surface of the micro-diameter drill has higher wear resistance.
结合实施例3与对比例1-2,类金刚石涂层的耐磨性、硬度和钻孔数均有所提高,说明控制蚀刻基材表面的过程、控制类金刚石涂层与基材表面初步覆盖时的过程以及实施梯度式降低基材偏压的方法,可以促进类金刚石涂层与基材表面结合力提高,提高类金刚石涂层的结构稳定性,从而提高耐磨性能和硬度。Combined with Example 3 and Comparative Examples 1-2, the wear resistance, hardness and the number of drill holes of the diamond-like coating have all improved, indicating that the process of controlling the surface of the etching substrate, the control of the diamond-like coating and the initial coverage of the substrate surface The process and the method of reducing the bias voltage of the substrate in a gradient manner can promote the improvement of the bonding force between the diamond-like carbon coating and the surface of the substrate, and improve the structural stability of the diamond-like carbon coating, thereby improving the wear resistance and hardness.
结合实施例4-5与实施例3,耐磨性、硬度和钻孔数均有所提高,说明在沉积类金刚石涂层时,调节合适的氩气氛围,可以使类金刚石涂层与基材的结合力更高,从而获得良好硬度和耐磨性的涂层。Combined with Example 4-5 and Example 3, the wear resistance, hardness and the number of drilled holes were all improved, indicating that when the diamond-like coating is deposited, adjusting the appropriate argon atmosphere can make the diamond-like coating and the substrate. The bond strength is higher, resulting in a coating with good hardness and wear resistance.
结合实施例6-7与实施例5,涂层的耐磨性、硬度、钻孔数和耐热性均有所提高,说明在沉积类金刚石涂层时,进一步控制基材偏压梯度式降低的过程,可以使类金刚石涂层形成的结构更加稳定,从而获得良好耐磨性、硬度和耐热性的涂层。Combined with Example 6-7 and Example 5, the wear resistance, hardness, number of drill holes and heat resistance of the coating have all improved, indicating that when the diamond-like coating is deposited, the gradient of the substrate bias is further controlled to reduce The process can make the structure formed by the diamond-like coating more stable, so as to obtain a coating with good wear resistance, hardness and heat resistance.
本具体实施例仅仅是对本申请的解释,其并不是对本申请的限制,本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改,但只要在本申请的权利要求范围内都受到专利法的保护。This specific embodiment is only an explanation of the application, and it does not limit the application. Those skilled in the art can make modifications to the embodiment without creative contribution as needed after reading this specification, but as long as the rights of the application are All claims are protected by patent law.
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