CN113999046B - A kind of preparation method of low temperature reaction sintering silicon carbide ceramic film - Google Patents
A kind of preparation method of low temperature reaction sintering silicon carbide ceramic film Download PDFInfo
- Publication number
- CN113999046B CN113999046B CN202111458282.6A CN202111458282A CN113999046B CN 113999046 B CN113999046 B CN 113999046B CN 202111458282 A CN202111458282 A CN 202111458282A CN 113999046 B CN113999046 B CN 113999046B
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- temperature
- sintering
- powder
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 223
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 179
- 239000000919 ceramic Substances 0.000 title claims abstract description 84
- 238000005245 sintering Methods 0.000 title claims abstract description 76
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000002121 nanofiber Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000012528 membrane Substances 0.000 claims abstract description 38
- 238000001035 drying Methods 0.000 claims abstract description 30
- 239000002994 raw material Substances 0.000 claims abstract description 30
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 25
- 150000003839 salts Chemical class 0.000 claims abstract description 24
- 235000002639 sodium chloride Nutrition 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000005995 Aluminium silicate Substances 0.000 claims abstract description 14
- 235000012211 aluminium silicate Nutrition 0.000 claims abstract description 14
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 14
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 13
- 239000001768 carboxy methyl cellulose Substances 0.000 claims abstract description 11
- 235000011187 glycerol Nutrition 0.000 claims abstract description 11
- 239000006229 carbon black Substances 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000002791 soaking Methods 0.000 claims abstract description 5
- 238000011033 desalting Methods 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims description 57
- 229910021426 porous silicon Inorganic materials 0.000 claims description 29
- 235000015895 biscuits Nutrition 0.000 claims description 23
- 238000000465 moulding Methods 0.000 claims description 19
- 239000002002 slurry Substances 0.000 claims description 19
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 16
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 9
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 9
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 239000002153 silicon-carbon composite material Substances 0.000 claims description 9
- 238000004898 kneading Methods 0.000 claims description 8
- 238000004321 preservation Methods 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 230000002431 foraging effect Effects 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
- 239000007791 liquid phase Substances 0.000 abstract description 11
- 239000011148 porous material Substances 0.000 abstract description 11
- 239000002245 particle Substances 0.000 abstract description 10
- 239000012071 phase Substances 0.000 abstract description 9
- 239000003513 alkali Substances 0.000 abstract description 7
- 238000003746 solid phase reaction Methods 0.000 abstract description 7
- 239000002253 acid Substances 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 abstract description 2
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 abstract description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 abstract description 2
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 abstract description 2
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 abstract description 2
- BUKHSQBUKZIMLB-UHFFFAOYSA-L potassium;sodium;dichloride Chemical compound [Na+].[Cl-].[Cl-].[K+] BUKHSQBUKZIMLB-UHFFFAOYSA-L 0.000 description 14
- 238000005336 cracking Methods 0.000 description 11
- 238000001125 extrusion Methods 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 8
- 239000000314 lubricant Substances 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000009766 low-temperature sintering Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000010612 desalination reaction Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001272 pressureless sintering Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/06—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances
- C04B38/063—Preparing or treating the raw materials individually or as batches
- C04B38/0635—Compounding ingredients
- C04B38/0645—Burnable, meltable, sublimable materials
- C04B38/067—Macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/06—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances
- C04B38/063—Preparing or treating the raw materials individually or as batches
- C04B38/0635—Compounding ingredients
- C04B38/0645—Burnable, meltable, sublimable materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6565—Cooling rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A20/00—Water conservation; Efficient water supply; Efficient water use
- Y02A20/124—Water desalination
- Y02A20/131—Reverse-osmosis
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
Abstract
Description
技术领域technical field
本发明属于无机膜分离材料技术领域的一种多孔陶瓷材料的制备方法,特别是一种低温反应烧结碳化硅陶瓷膜的制备方法。The invention belongs to the technical field of inorganic membrane separation materials and relates to a method for preparing a porous ceramic material, in particular to a method for preparing a low-temperature reaction sintered silicon carbide ceramic membrane.
背景技术Background technique
陶瓷膜分离技术是一种高效节能的分离技术,其应用领域涉及化学工业、石油与石油化工、生物化工、食品、电子、医药等行业。市场上的陶瓷膜主要有氧化铝、氧化钛、氧化硅、氧化锆和碳化硅等材质。其中,碳化硅陶瓷膜由于其优异的性能,特别是其在水处理领域的应用迅速发展,受到相关的高度关注。碳化硅陶瓷膜主要由碳化硅陶瓷支撑体、碳化硅过渡层和碳化硅膜层。Ceramic membrane separation technology is a high-efficiency and energy-saving separation technology, and its application fields involve chemical industry, petroleum and petrochemical industry, biochemical industry, food, electronics, medicine and other industries. Ceramic membranes on the market are mainly made of alumina, titanium oxide, silicon oxide, zirconia and silicon carbide. Among them, silicon carbide ceramic membranes have received high attention due to their excellent performance, especially the rapid development of their applications in the field of water treatment. The silicon carbide ceramic membrane is mainly composed of a silicon carbide ceramic support body, a silicon carbide transition layer and a silicon carbide film layer.
目前,SiC陶瓷支撑体制备主要有液相烧结、反应烧结、无压烧结和重结晶烧结等。无压烧结和重结晶烧结碳化硅陶瓷膜所需温度高、能耗高、对烧结炉设备要求高、成本高;液相烧结通常采用低熔点的氧化物作为烧结助剂,烧结温度低,但氧化物含量高;反应烧结温度相对较低,但陶瓷膜品质较差,成本相对较高。各种工艺方法各有优缺点。专利“一种低温烧结耐酸碱多孔碳化硅陶瓷支撑体的制备方法(申请号:CN201710656733.4)”利用一种能耐酸碱的烧结助剂在1400℃以下烧制机械强度高、空隙率高、耐酸碱的多孔碳化硅陶瓷支撑体。专利“液相烧结多通道碳化硅陶瓷膜及其制备方法(申请号:CN201810075180.8)”所述支撑体的原料中含有高岭土和滑石,利用液相烧结有效地降低了烧结温度,烧结温度为1500℃以下。“多通道碳化硅陶瓷膜及其制备方法(申请号:CN201810075202.0)”,将不同碳化硅粉Ⅰ、碳化硅粉Ⅱ以及所述造孔剂混合物料进行混练,得到泥料,并进行挤出成型,得到素坯干燥后烧成,得到多通道碳化硅陶瓷膜。专利“一种碳化硅陶瓷膜及其制备方法(申请号:CN201510449442.9)”将SiC骨料、烧结助剂、增韧助剂、高分子粘结剂按照一定比例混合,经搅拌和球磨、成型、高温烧结、涂膜并烧结后得到多孔碳化硅陶瓷膜。专利“一种常压固相烧结碳化硅膜支撑体及其制备方法(申请号:CN201811564686.1)”将亚微米级碳化硅粉或纳米级碳化硅粉中的一种、微米级碳化硅粉、碳粉、烧结助剂和有机粘结剂混合,得到混合粉体,在所得混合粉体中加入塑化剂、润滑剂和水混炼后,得到水基碳化硅泥料;将所得水基碳化硅泥料进行挤出成型并干燥,再升温至1750℃~2200℃烧结,得到碳化硅膜支撑体。专利“一种耐高温耐腐蚀反应烧结碳化硅膜支撑体及其制备方法(申请号:CN201911039324.5)”将亚微米级或微米级碳化硅粉、亚微米级或微米级氮化硅粉、碳前驱体充分混合,得到混合粉体;成型,得到生坯;生坯烧结得到耐高温耐腐蚀反应烧结碳化硅膜支撑体。At present, the preparation of SiC ceramic supports mainly includes liquid phase sintering, reaction sintering, pressureless sintering and recrystallization sintering. Pressureless sintering and recrystallization sintering of silicon carbide ceramic membranes require high temperature, high energy consumption, high requirements for sintering furnace equipment, and high cost; liquid phase sintering usually uses oxides with low melting points as sintering aids, and the sintering temperature is low, but The oxide content is high; the reaction and sintering temperature is relatively low, but the quality of the ceramic film is poor and the cost is relatively high. Each process method has its advantages and disadvantages. The patent "a preparation method of low-temperature sintering acid and alkali-resistant porous silicon carbide ceramic support (application number: CN201710656733.4)" uses an acid-alkali-resistant sintering aid to sinter below 1400°C with high mechanical strength and high porosity , acid and alkali resistant porous silicon carbide ceramic support body. The raw material of the support described in the patent "liquid phase sintered multi-channel silicon carbide ceramic membrane and its preparation method (application number: CN201810075180.8)" contains kaolin and talc, and the sintering temperature is effectively reduced by liquid phase sintering. The sintering temperature is Below 1500°C. "Multi-channel silicon carbide ceramic membrane and its preparation method (application number: CN201810075202.0)", mixing different silicon carbide powder I, silicon carbide powder II and the pore-forming agent mixture to obtain mud, and Extrusion molding, the green body obtained is dried and then fired to obtain a multi-channel silicon carbide ceramic membrane. The patent "a silicon carbide ceramic film and its preparation method (application number: CN201510449442.9)" mixes SiC aggregates, sintering aids, toughening aids, and polymer binders in a certain proportion, and after stirring and ball milling, Forming, high-temperature sintering, coating and sintering to obtain a porous silicon carbide ceramic membrane. The patent "A normal-pressure solid-phase sintered silicon carbide film support and its preparation method (application number: CN201811564686.1)" combines submicron silicon carbide powder or nanometer silicon carbide powder, micron silicon carbide powder , carbon powder, sintering aid and organic binder are mixed to obtain a mixed powder, and after mixing with plasticizer, lubricant and water in the obtained mixed powder, a water-based silicon carbide mud is obtained; the obtained water-based The silicon carbide sludge is extruded and dried, and then heated to 1750° C. to 2200° C. for sintering to obtain a silicon carbide film support. The patent "a high temperature and corrosion resistant reaction sintered silicon carbide film support and its preparation method (application number: CN201911039324.5)" combines submicron or micron silicon carbide powder, submicron or micron silicon nitride powder, The carbon precursor is fully mixed to obtain a mixed powder; molded to obtain a green body; the green body is sintered to obtain a high-temperature-resistant and corrosion-resistant reaction-sintered silicon carbide film support.
上述方法存在高温烧结(1700℃以上)碳化硅陶瓷支撑体的设备要求高,能耗高和成本高。低温烧结(1500℃左右)碳化硅陶瓷支撑体往往采用低熔点氧化物烧结助剂等,存在耐酸碱性差或强度低等问题。The above method has high equipment requirements for high-temperature sintering (above 1700° C.) silicon carbide ceramic support body, high energy consumption and high cost. Low-temperature sintering (about 1500°C) silicon carbide ceramic supports often use low-melting point oxide sintering aids, etc., which have problems such as poor acid and alkali resistance or low strength.
发明内容Contents of the invention
为了解决背景技术中存在的问题,本发明提出了一种低温反应烧结碳化硅陶瓷膜的制备方法,通过硅粉与碳黑固相反应生成的SiC新相与SiC粉体原料共烧结,同时采用NaCl-KCl熔盐体系的硅碳反应将SiC原料颗粒黏连成连续的多孔陶瓷支撑体。碳化硅陶瓷膜表面由碳化硅纳米纤维交织的纳米纤维构筑均匀孔隙。该制备碳化硅陶瓷膜工艺简捷,烧结温度低,氧化物含量少、孔隙均匀。In order to solve the problems existing in the background technology, the present invention proposes a method for preparing a low-temperature reaction sintered silicon carbide ceramic film. The new SiC phase generated by the solid phase reaction of silicon powder and carbon black is co-sintered with the SiC powder raw material. The silicon-carbon reaction in the NaCl-KCl molten salt system bonds the SiC raw material particles into a continuous porous ceramic support. The surface of the silicon carbide ceramic membrane is composed of nanofibers interwoven with silicon carbide nanofibers to construct uniform pores. The preparation process of the silicon carbide ceramic film is simple and convenient, the sintering temperature is low, the oxide content is small, and the pores are uniform.
针对现有技术中存在的温度高、设备要求高、能耗大和表面陶瓷膜孔隙较大等问题,在本申请中,突出新生成碳化硅相与碳化硅原料的烧结,获得碳化硅陶瓷支撑体的制备。In view of the problems existing in the prior art such as high temperature, high equipment requirements, large energy consumption and large pores of the surface ceramic membrane, in this application, the sintering of the newly formed silicon carbide phase and the silicon carbide raw material is highlighted to obtain a silicon carbide ceramic support body preparation.
为了实现以上发明目的,本发明提供以下技术方案:In order to achieve the above object of the invention, the present invention provides the following technical solutions:
本发明采用碳化硅粉、硅粉、碳黑、NaCl-KCl熔盐、高岭土、羧甲基纤维素钠、PVP、甘油和水等原料,通过配料、混料成泥、成型、干燥、烧结和浸水除盐等工艺制备碳化硅陶瓷膜。The present invention uses raw materials such as silicon carbide powder, silicon powder, carbon black, NaCl-KCl molten salt, kaolin, sodium carboxymethyl cellulose, PVP, glycerin and water, through batching, mixing into mud, molding, drying, sintering and SiC ceramic membranes were prepared by water immersion desalination and other processes.
本发明依靠硅与碳固相反应烧结生成的β-SiC新相及熔盐液相反应将SiC原料颗粒黏连成多孔陶瓷支撑体,并采用碳化硅纳米纤维浆料涂覆烧结来制备碳化硅陶瓷膜。The invention relies on the β-SiC new phase generated by the sintering of silicon and carbon solid phase reaction and molten salt liquid phase reaction to bond SiC raw material particles into a porous ceramic support body, and uses silicon carbide nanofiber slurry to coat and sinter to prepare silicon carbide Ceramic Membrane.
所述方法具体包括:Described method specifically comprises:
(1)配料及捏合成泥,挤出成型,烘干制备干素坯:将碳化硅粉体、硅粉、碳粉、NaCl-KCl熔盐、高岭土、羧甲基纤维素和甘油等按照配方称量配料,加水搅拌混料,然后捏合成泥,捏合后的泥料挤出成型,控制成型温度,获得高质量成型坯料的湿碳化硅支撑体素坯,将湿碳化硅支撑体素坯在烘箱内烘干,获得碳化硅素坯;(1) Batching and kneading into mud, extruding and drying to prepare dry green body: silicon carbide powder, silicon powder, carbon powder, NaCl-KCl molten salt, kaolin, carboxymethyl cellulose and glycerin, etc. according to the formula Weigh the ingredients, add water to stir the mixture, and then knead it into a mud, extrude the kneaded mud, control the molding temperature, and obtain a high-quality wet silicon carbide support body green body, the wet silicon carbide support body green body Drying in an oven to obtain a silicon carbide blank;
(2)将上述烘干之后的碳化硅素坯置于高温炉中并抽真空加热,使碳化硅素坯中的粘结成型剂等有机物完全裂解,实现裂解排胶;(2) Place the dried silicon carbide green body in a high-temperature furnace and heat it in a vacuum, so that the organic matter such as the bonding molding agent in the silicon carbide green body is completely cracked, so as to realize cracking and debinding;
(3)碳化硅支撑体烧结:将碳化硅素坯放入烧结炉,高温烧结获得多孔碳化硅,浸水除盐,获得多孔碳化硅支撑体;(3) Sintering of silicon carbide support body: put the silicon carbide biscuit into a sintering furnace, sinter at high temperature to obtain porous silicon carbide, soak in water to remove salt, and obtain a porous silicon carbide support body;
(4)将碳化硅纳米纤维和聚乙烯醇(PVA)按照一定浓度混合配置获得碳化硅纳米纤维水浆料,将碳化硅纳米纤维水浆料涂在多孔碳化硅支撑体上,然后将涂浆料后的多孔碳化硅支撑体在烘箱内烘干;(4) Mix silicon carbide nanofibers and polyvinyl alcohol (PVA) according to a certain concentration to obtain silicon carbide nanofiber water slurry, apply the silicon carbide nanofiber water slurry on the porous silicon carbide support, and then apply the slurry The porous silicon carbide support after feeding is dried in an oven;
(5)将覆膜了碳化硅纳米纤维的碳化硅支撑体在高温炉中烧结,获得碳化硅陶瓷膜。(5) Sintering the silicon carbide support body coated with silicon carbide nanofibers in a high-temperature furnace to obtain a silicon carbide ceramic film.
所述(1)中,先将硅粉与碳黑以1:(1~3)的摩尔比进行配料混合获得硅碳复合粉体,可以通过搅拌机封闭搅拌、混料等方式实现原料的均匀混合;然后将碳化硅粉体、硅碳复合粉体、NaCl-KCl熔盐、高岭土、羧甲基纤维素和甘油按照质量份数为70~80:6~15:2~5:5~10:1~4:0.2~0.5。In the above (1), the silicon powder and carbon black are mixed at a molar ratio of 1: (1 to 3) to obtain a silicon-carbon composite powder, and the uniform mixing of the raw materials can be achieved by closed stirring and mixing with a mixer ; Then silicon carbide powder, silicon-carbon composite powder, NaCl-KCl molten salt, kaolin, carboxymethyl cellulose and glycerin are 70-80:6-15:2-5:5-10 in parts by mass: 1~4: 0.2~0.5.
这样通过在碳化硅颗粒中添加碳黑与硅粉并利用低温液相反应烧结制备出碳化硅陶瓷膜,使得碳化硅陶瓷膜具有烧结温度低、氧化物含量少、耐腐蚀、强度高等特点。In this way, the silicon carbide ceramic film is prepared by adding carbon black and silicon powder to the silicon carbide particles and sintering by low-temperature liquid phase reaction, so that the silicon carbide ceramic film has the characteristics of low sintering temperature, low oxide content, corrosion resistance, and high strength.
并且在步骤(1)得到的混合原料NaCl-KCl熔盐对原粉有细化作用,熔盐配比为1:1.2,采用熔盐法,以NaCl-KCl作熔盐介质,利用Si粉与碳反应在碳化硅原料粉体表面生成SiC新相。And the mixed raw material NaCl-KCl molten salt obtained in step (1) has a refinement effect on the original powder, the molten salt ratio is 1:1.2, the molten salt method is adopted, and NaCl-KCl is used as the molten salt medium, and Si powder and The carbon reaction generates a new SiC phase on the surface of the silicon carbide raw material powder.
所述的碳化硅粉体的粒径为0.1~10μm,纯度为99%以上。The particle diameter of the silicon carbide powder is 0.1-10 μm, and the purity is above 99%.
所述(1)中,加水搅拌混料具体过程是:原料在混料机中先干混10~30min,然后加水湿混40~60min,再进行练泥,并置于常温下陈腐24h。In the above (1), the specific process of adding water and mixing is as follows: the raw materials are dry-mixed in the mixer for 10-30 minutes, then wet-mixed with water for 40-60 minutes, and then muddled and placed at room temperature for 24 hours.
所述(1)中,在烘箱内烘干,是按照以下特定阶梯控温方式进行处理:In the above (1), the drying in the oven is carried out according to the following specific step temperature control method:
将泥坯置于常温下晾干12~24h,然后转移到烘箱内,从常温开始升温到50℃,升温速率为1~5℃/min,保温3~5h;Dry the mud at room temperature for 12-24 hours, then transfer it to an oven, start to heat up from room temperature to 50°C, the heating rate is 1-5°C/min, and keep warm for 3-5 hours;
从50℃开始升温到80℃,升温速率为1~5℃/min,保温3~5h;Start to heat up from 50°C to 80°C, the heating rate is 1-5°C/min, and keep warm for 3-5 hours;
从80℃开始升温到120℃,升温速率为1~5℃/min,保温5~10h。Start to heat up from 80°C to 120°C, the heating rate is 1-5°C/min, and keep warm for 5-10h.
上述采用这样的阶梯控温方式进行烘干处理,能够避免碳化硅素坯出现裂纹,通过逐步缓慢升温,水分挥发,实现高质量无裂纹素坯的制备。The aforementioned stepwise temperature control method for drying treatment can avoid cracks in the silicon carbide green body, and the preparation of high-quality crack-free green body can be realized through gradually and slowly raising the temperature to volatilize water.
所述(2)具体为:将上述烘干之后的碳化硅素坯置于管式炉中并抽真空,然后从常温以3~5℃/min的升温速率升到800℃处理,使碳化硅素坯中的成型剂、粘结剂和润滑剂等有机物完全裂解。The above (2) is specifically: placing the dried silicon carbide blank in a tube furnace and vacuuming it, and then raising the temperature from room temperature to 800°C at a rate of 3-5°C/min to make the silicon carbide blank Organic substances such as molding agents, binders and lubricants in the furnace are completely decomposed.
所述(3)中的烧结还加入烧结助剂,烧结助剂是由高岭土或Al2O3与SiO2复合粉体构成。In the sintering in (3), a sintering aid is also added, and the sintering aid is composed of kaolin or Al 2 O 3 and SiO 2 composite powder.
所述(3)中,高温烧结具体是按照以下特定阶梯升温方式进行处理:In (3), the high-temperature sintering is specifically processed according to the following specific stepwise heating method:
从常温升温到200℃,升温速率为5~10℃/min,保温1~3h;From room temperature to 200°C, the heating rate is 5-10°C/min, and the temperature is kept for 1-3h;
从200℃升温到900℃,升温速率为5~10℃/min,保温1~3h;From 200°C to 900°C, the heating rate is 5-10°C/min, and the temperature is kept for 1-3 hours;
从900℃升温到1350~1600℃,升温速率为1~5℃/min;From 900°C to 1350-1600°C, the heating rate is 1-5°C/min;
在1350~1600℃温度下,保温1~5h;At a temperature of 1350-1600°C, keep warm for 1-5 hours;
然后随炉冷却。Then cool down with the furnace.
上述采用这样的阶梯控温方式进行高温烧结处理,能够控制不同温度依次对应高温烧结过程液相的形成,陶瓷颗粒间的粘结,实现多孔陶瓷烧结。The above-mentioned high-temperature sintering treatment using such a stepwise temperature control method can control the formation of liquid phase and the bonding between ceramic particles in sequence at different temperatures corresponding to the high-temperature sintering process, so as to realize porous ceramic sintering.
所述(3)中,浸水除盐是将多孔碳化硅置于水中浸泡30~60min,然后换水,如此重复3~5次。In the above (3), desalination by soaking in water involves soaking the porous silicon carbide in water for 30-60 minutes, and then changing the water, repeating this for 3-5 times.
所述(4)中,按照碳化硅纳米纤维按照质量百分比为0.5wt%~5wt%、聚乙烯醇0.2wt%~0.5wt%浓度配置的碳化硅纳米纤维水浆料。In the above (4), the silicon carbide nanofiber aqueous slurry is prepared according to the mass percentage of silicon carbide nanofibers at a concentration of 0.5wt% to 5wt% and polyvinyl alcohol at a concentration of 0.2wt% to 0.5wt%.
所述(5)中,高温炉中以900-1600℃烧结0.5-2小时获得碳化硅陶瓷膜。In the above (5), the silicon carbide ceramic film is obtained by sintering at 900-1600° C. for 0.5-2 hours in a high-temperature furnace.
本发明支撑体的烧结温度为1350-1600℃,由于原料中含有硅粉和碳黑,利用硅粉与碳黑固相反应新生成的SiC相与SiC原料粉体共烧结制备多孔SiC陶瓷,同时采用NaCl-KCl熔盐液相有利于SiC原料微粒的整形、低温烧结及造孔。通过硅与碳固相反应烧结生成的β-SiC新相及熔盐液相反应将SiC原料颗粒黏连成连续的多孔陶瓷支撑体,表面形成由SiC纳米纤维交织构筑的纳米孔隙。The sintering temperature of the support body of the present invention is 1350-1600°C. Since the raw materials contain silicon powder and carbon black, the SiC phase newly generated by the solid phase reaction of silicon powder and carbon black is used to co-sinter with the SiC raw material powder to prepare porous SiC ceramics. The use of NaCl-KCl molten salt liquid phase is beneficial to the shaping, low-temperature sintering and pore formation of SiC raw material particles. The β-SiC new phase generated by the solid-state reaction of silicon and carbon sintering and the liquid-phase reaction of molten salt bond the SiC raw material particles into a continuous porous ceramic support, and the surface forms nanopores constructed by interweaving SiC nanofibers.
针对背景技术中的问题,本发明采用含有硅粉和碳黑的原料,利用硅粉与碳黑固相反应新生成的SiC相与SiC粉体原料共烧结制备多孔SiC陶瓷,同时采用NaCl-KCl熔盐有利于SiC原料的整形、低温烧结及造孔。依靠硅与碳固相反应生成的β-SiC新相及熔盐液相反应将SiC原料颗粒黏连成连续的多孔陶瓷支撑体。覆膜碳化硅纳米纤维的碳化硅陶瓷膜表面孔隙由交织的纳米纤维构筑,孔隙小且均匀。Aiming at the problems in the background technology, the present invention adopts raw materials containing silicon powder and carbon black, utilizes the SiC phase newly generated by the solid phase reaction of silicon powder and carbon black to co-sinter with SiC powder raw materials to prepare porous SiC ceramics, and simultaneously uses NaCl-KCl Molten salt is beneficial to shaping, low-temperature sintering and pore creation of SiC raw materials. Relying on the new phase of β-SiC formed by the solid phase reaction of silicon and carbon and the liquid phase reaction of molten salt, the SiC raw material particles are bonded into a continuous porous ceramic support. The surface pores of the silicon carbide ceramic membrane coated with silicon carbide nanofibers are constructed by interwoven nanofibers, and the pores are small and uniform.
本发明的有益效果:Beneficial effects of the present invention:
本发明采用NaCl-KCl熔盐体系的硅碳反应将SiC原料颗粒黏连成连续的多孔陶瓷支撑体,碳化硅纳米纤维900-1600℃烧结,由于PVA的粘结及碳化硅表面氧化层在高温下粘结,覆膜碳化硅纳米纤维的碳化硅陶瓷膜表面孔隙由交织的纳米纤维构筑,孔隙小且均匀。烧结温度在1350~1600℃、原料易得、配制简单、成型容易、生产成本低、对窑炉要求低,能耗低、适合工业定制多孔碳化硅陶瓷材料的制备方法。The present invention adopts the silicon-carbon reaction of NaCl-KCl molten salt system to bond the SiC raw material particles into a continuous porous ceramic support body, and the silicon carbide nanofibers are sintered at 900-1600°C. Under bonding, the surface pores of the silicon carbide ceramic membrane covered with silicon carbide nanofibers are constructed by interwoven nanofibers, and the pores are small and uniform. The sintering temperature is 1350-1600°C, the raw materials are easy to obtain, the preparation is simple, the molding is easy, the production cost is low, the requirement for the kiln is low, the energy consumption is low, and it is suitable for the preparation method of industrial customized porous silicon carbide ceramic materials.
本发明产物具有氧化物含量少、纯度高、孔隙率高、耐酸碱的特点(氧化物含量主要取决于原料中高岭土的添加量)。该工艺具有烧结温度低、成型工艺简单、生产成本低、无需超高温设备、适合工业规模化生产。The product of the invention has the characteristics of less oxide content, high purity, high porosity, and acid and alkali resistance (the oxide content mainly depends on the amount of kaolin added in the raw material). The process has the advantages of low sintering temperature, simple molding process, low production cost, no need of ultra-high temperature equipment, and is suitable for industrial scale production.
本发明制成的这种低温反应烧结碳化硅陶瓷膜孔隙率在30%~52%之间,体积密度为1.0-1.5g/cm3,具有烧结温度低、氧化物含量少、内部孔隙率高、表面为纳米孔隙和耐酸碱等特点。The low-temperature reaction sintered silicon carbide ceramic membrane produced by the present invention has a porosity of 30% to 52%, a volume density of 1.0-1.5g/cm 3 , low sintering temperature, low oxide content and high internal porosity , The surface is characterized by nanoporosity and acid and alkali resistance.
附图说明Description of drawings
图1为实施例1中低温反应烧结碳化硅陶瓷膜的制备的流程图。FIG. 1 is a flow chart of the preparation of low temperature reaction sintered silicon carbide ceramic film in Example 1.
图2为实施例1中碳化硅素坯的SEM显微结构图。FIG. 2 is a SEM microstructure diagram of the silicon carbide green body in Example 1. FIG.
图3为实施例1中碳化硅陶瓷膜的SEM显微结构图。FIG. 3 is a SEM microstructure diagram of the silicon carbide ceramic film in Example 1. FIG.
图4为实施例1中碳化硅纳米线陶瓷膜的SEM显微结构图。FIG. 4 is a SEM microstructure diagram of the silicon carbide nanowire ceramic film in Example 1. FIG.
具体实施方式Detailed ways
以下通过下述实施方式进一步说明本发明,应理解,下述实施方式仅用于说明本发明,而非限制本发明。The present invention will be further described below through the following embodiments. It should be understood that the following embodiments are only used to illustrate the present invention, not to limit the present invention.
本发明的实施例如下:Embodiments of the present invention are as follows:
实施例1Example 1
(1)配料及捏合成泥:碳化硅粉体、硅碳复合粉体、NaCl-KCl熔盐、高岭土、羧甲基纤维素和甘油按照配方称量配料,其质量比为78:10:3:6:2.8:0.2。投入密闭混料机,加水搅拌混料,然后捏合成泥。(1) Ingredients and kneading into mud: silicon carbide powder, silicon-carbon composite powder, NaCl-KCl molten salt, kaolin, carboxymethyl cellulose and glycerin are weighed according to the formula, and the mass ratio is 78:10:3 :6:2.8:0.2. Put it into a closed mixer, add water to stir the mixture, and then knead it into mud.
具体先原料在混料机中先干混25min,然后加水湿混50min,再进行练泥,并置于常温下陈腐24h。Specifically, the raw materials are dry-mixed in the mixer for 25 minutes, then wet-mixed with water for 50 minutes, and then the mud is smelted and placed at room temperature for 24 hours.
(2)挤出成型:捏合后的泥料在挤出成型机内挤出成型,控制成型温度为常温,获得湿碳化硅支撑体素坯,切割成片状泥坯。(2) Extrusion molding: the kneaded mud material is extruded and formed in an extrusion molding machine, and the molding temperature is controlled at normal temperature to obtain a wet silicon carbide support body blank, which is cut into sheet-shaped mud blanks.
然后在烘箱内烘干,获得碳化硅素坯;Then dry in an oven to obtain a silicon carbide green compact;
(3)陶瓷素坯烘干裂解:(3) Ceramic biscuit drying and cracking:
将湿碳化硅支撑体泥坯在烘箱内排除水分定型,具体按照以下特定阶梯控温方式进行处理:The wet silicon carbide support body mud is shaped in an oven to remove moisture, and it is specifically processed according to the following specific step temperature control method:
将泥坯置于常温下晾干18h,然后转移到烘箱内,从常温开始升温到50℃,升温速率为3℃/min,保温3h;Put the mud base at room temperature to dry for 18 hours, then transfer it to an oven, start heating from room temperature to 50°C, the heating rate is 3°C/min, and keep warm for 3h;
从50℃开始升温到80℃,升温速率为3℃/min,保温4h;Start to heat up from 50°C to 80°C with a heating rate of 3°C/min and hold for 4 hours;
从80℃开始升温到120℃,升温速率为3℃/min,保温8h。The temperature was raised from 80°C to 120°C, the heating rate was 3°C/min, and the temperature was kept for 8h.
烘干后获得碳化硅素坯;Obtain silicon carbide biscuit after drying;
将上述烘干之后的碳化硅素坯置于管式炉中并抽真空,然后从常温以4℃/min的升温速率升到800℃处理将其中的成型剂和润滑剂完全裂解。The dried silicon carbide blank was placed in a tube furnace and evacuated, and then the temperature was raised from room temperature to 800°C at a rate of 4°C/min to completely decompose the molding agent and lubricant therein.
(4)碳化硅支撑体烧结:烘干裂解后的素坯放入烧结炉,烧结程序:从常温升温到600℃,升温速率为5℃/min,保温1h;从600℃升温到900℃,升温速率为5℃/min,保温1h;从900℃升温到1450℃,升温速率为3℃/min;在1450℃温度下,保温2h;然后随炉冷却;(4) Sintering of silicon carbide support body: put the biscuit after drying and cracking into the sintering furnace, the sintering procedure: from normal temperature to 600°C, the heating rate is 5°C/min, and keep for 1h; from 600°C to 900°C, The heating rate is 5°C/min, keep warm for 1h; from 900°C to 1450°C, the heating rate is 3°C/min; at 1450°C, hold for 2h; then cool with the furnace;
再将多孔碳化硅置于水中浸泡40min,然后换水,如此重复4次,获得多孔碳化硅陶瓷膜。The porous silicon carbide was then soaked in water for 40 minutes, and then the water was changed. This was repeated 4 times to obtain a porous silicon carbide ceramic membrane.
(5)碳化硅纳米纤维浆料制备、覆膜和烘干烧结:将碳化硅纳米纤维和聚乙烯醇PVA分别按照质量百分比为5wt%、0.5wt%浓度配置的碳化硅纳米纤维水浆料,刷涂在多孔碳化硅支撑体上,然后将覆膜层在烘箱内100℃烘干5h。(5) Preparation of silicon carbide nanofiber slurry, coating and drying and sintering: the silicon carbide nanofiber and polyvinyl alcohol PVA are prepared according to the mass percentage of 5wt% and 0.5wt% concentration of silicon carbide nanofiber water slurry, Brush coating on the porous silicon carbide support, and then dry the coating layer in an oven at 100°C for 5h.
(6)碳化硅陶瓷膜烧结:将覆膜了碳化硅纳米纤维的碳化硅支撑体在高温炉中1200℃烧结2h,获得碳化硅陶瓷膜。(6) Sintering of silicon carbide ceramic film: the silicon carbide support body coated with silicon carbide nanofibers was sintered in a high temperature furnace at 1200° C. for 2 hours to obtain a silicon carbide ceramic film.
本实例1所得到的碳化硅陶瓷膜的烧结前和烧结后,及碳化硅纳米纤维陶瓷膜的SEM显微结构分别如图2、图3和图4所示。通过测试算出此实施例2中得到的碳化硅陶瓷膜的气孔率为40.5%,体积密度为1.25g/cm3,氧化物含量约6%。The SEM microstructures of the silicon carbide ceramic film obtained in Example 1 before and after sintering, and the silicon carbide nanofiber ceramic film are shown in FIG. 2 , FIG. 3 and FIG. 4 , respectively. Through testing, it is calculated that the porosity of the silicon carbide ceramic membrane obtained in Example 2 is 40.5%, the bulk density is 1.25 g/cm 3 , and the oxide content is about 6%.
实施例2Example 2
(1)配料及捏合成泥:将碳化硅粉体、硅碳复合粉体、NaCl-KCl熔盐、高岭土、羧甲基纤维素和甘油按照配方称量配料,其质量比为70:14:2:10:3.5:0.5。投入密闭混料机,加水搅拌混料,然后捏合成泥。(1) Ingredients and kneading into mud: Silicon carbide powder, silicon-carbon composite powder, NaCl-KCl molten salt, kaolin, carboxymethyl cellulose and glycerin are weighed and ingredients according to the formula, and the mass ratio is 70:14: 2:10:3.5:0.5. Put it into a closed mixer, add water to stir the mixture, and then knead it into mud.
具体先原料在混料机中先干混30min,然后加水湿混60min,再进行练泥,并置于常温下陈腐24h。Specifically, the raw materials are dry-mixed in the mixer for 30 minutes, then wet-mixed with water for 60 minutes, and then the mud is kneaded, and placed at room temperature for 24 hours.
(2)挤出成型:捏合后的泥料在真空挤出成型机内挤出成型,控制成型温度,获得湿碳化硅支撑体素坯,切割成片状泥坯。(2) Extrusion molding: the kneaded mud material is extruded and formed in a vacuum extrusion molding machine, and the molding temperature is controlled to obtain a wet silicon carbide support body blank, which is cut into sheet-shaped mud blanks.
(3)陶瓷素坯烘干裂解:(3) Ceramic biscuit drying and cracking:
将湿碳化硅支撑体泥坯在烘箱内排除水分定型,具体按照以下特定阶梯控温方式进行处理:The wet silicon carbide support body mud is shaped in an oven to remove moisture, and it is specifically processed according to the following specific step temperature control method:
将泥坯置于常温下晾干24h,然后转移到烘箱内,从常温开始升温到50℃,升温速率为5℃/min,保温3h;Put the mud base at room temperature to dry for 24 hours, then transfer it to an oven, start heating from room temperature to 50°C, the heating rate is 5°C/min, and keep warm for 3h;
从50℃开始升温到80℃,升温速率为5℃/min,保温5h;Start to heat up from 50°C to 80°C with a heating rate of 5°C/min and hold for 5 hours;
从80℃开始升温到120℃,升温速率为5℃/min,保温10h。Start to heat up from 80°C to 120°C at a heating rate of 5°C/min and hold for 10 hours.
烘干后获得碳化硅素坯;Obtain silicon carbide biscuit after drying;
将上述烘干之后的碳化硅素坯置于管式炉中并抽真空,然后从常温以4℃/min的升温速率升到800℃处理将其中的成型剂和润滑剂完全裂解。The dried silicon carbide blank was placed in a tube furnace and evacuated, and then the temperature was raised from room temperature to 800°C at a rate of 4°C/min to completely decompose the molding agent and lubricant therein.
(4)碳化硅支撑体烧结:烘干裂解后的素坯放入烧结炉,烧结程序:从常温升温到600℃,升温速率为5℃/min,保温1h;从600℃升温到900℃,升温速率为5℃/min,保温1h;从900℃升温到1450℃,升温速率为3℃/min;在1450℃温度下,保温2h;然后随炉冷却;(4) Sintering of silicon carbide support body: put the biscuit after drying and cracking into the sintering furnace, the sintering procedure: from normal temperature to 600°C, the heating rate is 5°C/min, and keep for 1h; from 600°C to 900°C, The heating rate is 5°C/min, keep warm for 1h; from 900°C to 1450°C, the heating rate is 3°C/min; at 1450°C, hold for 2h; then cool with the furnace;
再将多孔碳化硅置于水中浸泡60min,然后换水,如此重复5次,获得多孔碳化硅陶瓷膜。The porous silicon carbide was then soaked in water for 60 minutes, and then the water was changed. This was repeated 5 times to obtain a porous silicon carbide ceramic membrane.
(5)碳化硅纳米纤维浆料制备、覆膜和烘干烧结:将碳化硅纳米纤维和聚乙烯醇PVA分别按照质量百分比为0.5wt%,0.2wt%浓度配置的碳化硅纳米纤维水浆料,刷涂在多孔碳化硅支撑体上,然后将覆膜层在烘箱内100℃烘干5h。(5) Preparation of silicon carbide nanofiber slurry, coating and drying and sintering: silicon carbide nanofiber and polyvinyl alcohol PVA are prepared according to the mass percentage of 0.5wt% and 0.2wt% concentration of silicon carbide nanofiber water slurry , brush-coated on the porous silicon carbide support, and then dry the coating layer in an oven at 100°C for 5h.
(6)碳化硅陶瓷膜烧结:将覆膜了碳化硅纳米纤维的碳化硅支撑体在高温炉中900℃烧结2h,获得碳化硅陶瓷膜。(6) Sintering of silicon carbide ceramic membrane: the silicon carbide support body coated with silicon carbide nanofibers was sintered in a high-temperature furnace at 900° C. for 2 hours to obtain a silicon carbide ceramic membrane.
通过测试算出此实施例2中得到的碳化硅陶瓷膜的气孔率为33.4%,体积密度为1.286g/cm3,氧化物含量约10%。Through testing, it is calculated that the porosity of the silicon carbide ceramic membrane obtained in Example 2 is 33.4%, the bulk density is 1.286 g/cm 3 , and the oxide content is about 10%.
实施例3Example 3
(1)配料及捏合成泥:将碳化硅粉体、硅碳复合粉体、NaCl-KCl熔盐、高岭土、羧甲基纤维素和甘油按照配方称量配料,其质量比为75:12:2.5:6.5:3.7:0.3。投入密闭混料机,加水搅拌混料,然后捏合成泥。(1) Ingredients and kneading into mud: Weigh silicon carbide powder, silicon-carbon composite powder, NaCl-KCl molten salt, kaolin, carboxymethyl cellulose and glycerin according to the formula, and the mass ratio is 75:12: 2.5:6.5:3.7:0.3. Put it into a closed mixer, add water to stir the mixture, and then knead it into mud.
具体先原料在混料机中先干混10min,然后加水湿混40min,再进行练泥,并置于常温下陈腐24h。Specifically, the raw materials are dry mixed in the mixer for 10 minutes, then wet mixed with water for 40 minutes, and then the mud is smelted and placed at room temperature for 24 hours.
(2)挤出成型:捏合后的泥料在真空挤出成型机内挤出成型,控制成型温度,获得湿碳化硅支撑体素坯,切割成片状泥坯。(2) Extrusion molding: the kneaded mud material is extruded and formed in a vacuum extrusion molding machine, and the molding temperature is controlled to obtain a wet silicon carbide support body blank, which is cut into sheet-shaped mud blanks.
(3)陶瓷素坯烘干裂解:(3) Ceramic biscuit drying and cracking:
将湿碳化硅支撑体泥坯在烘箱内排除水分定型,具体按照以下特定阶梯控温方式进行处理:The wet silicon carbide support body mud is shaped in an oven to remove moisture, and it is specifically processed according to the following specific step temperature control method:
将泥坯置于常温下晾干12h,然后转移到烘箱内,从常温开始升温到50℃,升温速率为1℃/min,保温3h;Put the mud body at room temperature to dry for 12 hours, then transfer it to an oven, start heating from room temperature to 50°C, the heating rate is 1°C/min, and keep warm for 3h;
从50℃开始升温到80℃,升温速率为1℃/min,保温3h;Start to heat up from 50°C to 80°C with a heating rate of 1°C/min and hold for 3 hours;
从80℃开始升温到120℃,升温速率为1℃/min,保温5h。The temperature was raised from 80°C to 120°C at a heating rate of 1°C/min and kept for 5 hours.
烘干后获得碳化硅素坯;Obtain silicon carbide biscuit after drying;
将上述烘干之后的碳化硅素坯置于管式炉中并抽真空,然后从常温以3℃/min的升温速率升到800℃处理将其中的成型剂和润滑剂完全裂解。The dried silicon carbide blank was placed in a tube furnace and evacuated, and then the temperature was raised from room temperature to 800°C at a rate of 3°C/min to completely crack the molding agent and lubricant therein.
(4)碳化硅支撑体烧结:烘干裂解后的素坯放入烧结炉,烧结程序:从常温升温到600℃,升温速率为5℃/min,保温1h;从600℃升温到900℃,升温速率为5℃/min,保温1h;从900℃升温到1500℃,升温速率为3℃/min;在1500℃温度下,保温2h;然后随炉冷却;(4) Sintering of silicon carbide support body: put the biscuit after drying and cracking into the sintering furnace, the sintering procedure: from normal temperature to 600°C, the heating rate is 5°C/min, and keep for 1h; from 600°C to 900°C, The heating rate is 5°C/min, keep warm for 1h; from 900°C to 1500°C, the heating rate is 3°C/min; at 1500°C, keep warm for 2h; then cool with the furnace;
再将多孔碳化硅置于水中浸泡30min,然后换水,如此重复5次,获得多孔碳化硅陶瓷膜。The porous silicon carbide was then soaked in water for 30 minutes, and then the water was changed. This was repeated 5 times to obtain a porous silicon carbide ceramic membrane.
(5)碳化硅纳米纤维浆料制备、覆膜和烘干烧结:将碳化硅纳米纤维和聚乙烯醇PVA分别按照质量百分比为2.5wt%,0.3wt%浓度配置的碳化硅纳米纤维水浆料,刷涂在多孔碳化硅支撑体上,然后将覆膜层在烘箱内100℃烘干4h。(5) SiC nanofiber slurry preparation, film coating and drying and sintering: silicon carbide nanofiber and polyvinyl alcohol PVA are respectively prepared according to the mass percentage of 2.5wt% and 0.3wt% concentration of silicon carbide nanofiber water slurry , brush-coated on the porous silicon carbide support, and then dry the coating layer in an oven at 100°C for 4h.
(6)碳化硅陶瓷膜烧结:将覆膜了碳化硅纳米纤维的碳化硅支撑体在高温炉中1000℃烧结2h,获得碳化硅陶瓷膜。(6) Sintering of silicon carbide ceramic film: the silicon carbide support body coated with silicon carbide nanofibers was sintered in a high temperature furnace at 1000° C. for 2 hours to obtain a silicon carbide ceramic film.
通过测试算出此实施例2中得到的碳化硅陶瓷膜的气孔率为33.5%,体积密度为1.29g/cm3,氧化物含量约6.5%。Through testing, it is calculated that the porosity of the silicon carbide ceramic membrane obtained in Example 2 is 33.5%, the bulk density is 1.29 g/cm 3 , and the oxide content is about 6.5%.
实施例4Example 4
(1)配料及捏合成泥:将碳化硅粉体、硅碳复合粉体、NaCl-KCl熔盐、高岭土、羧甲基纤维素和甘油按照配方称量配料,其质量比为80:6:4:8:1.5:0.5。投入密闭混料机,加水搅拌混料,然后捏合成泥。(1) Batching and kneading into mud: weigh silicon carbide powder, silicon-carbon composite powder, NaCl-KCl molten salt, kaolin, carboxymethyl cellulose and glycerin according to the formula, and the mass ratio is 80:6: 4:8:1.5:0.5. Put it into a closed mixer, add water to stir the mixture, and then knead it into mud.
具体先原料在混料机中先干混20min,然后加水湿混45min,再进行练泥,并置于常温下陈腐24h。Specifically, the raw materials are dry-mixed in the mixer for 20 minutes, then wet-mixed with water for 45 minutes, and then the mud is smelted and placed at room temperature for 24 hours.
(2)挤出成型:捏合后的泥料在真空挤出成型机内挤出成型,控制成型温度,获得湿碳化硅支撑体素坯,切割成片状泥坯。(2) Extrusion molding: the kneaded mud material is extruded and formed in a vacuum extrusion molding machine, and the molding temperature is controlled to obtain a green silicon carbide support body, which is cut into sheet-shaped mud billets.
(3)陶瓷素坯烘干裂解:将湿碳化硅支撑体泥坯在烘箱内排除水分定型,具体按照以下特定阶梯控温方式进行处理:(3) Ceramic biscuit drying and cracking: the wet silicon carbide support body mud blank is removed from the moisture in the oven to shape, and it is specifically processed according to the following specific step temperature control method:
将泥坯置于常温下晾干20h,然后转移到烘箱内,从常温开始升温到50℃,升温速率为4℃/min,保温4h;Dry the mud at room temperature for 20 hours, then transfer it to an oven, start to heat up from room temperature to 50°C, the heating rate is 4°C/min, and keep warm for 4h;
从50℃开始升温到80℃,升温速率为4℃/min,保温3h;Start to heat up from 50°C to 80°C with a heating rate of 4°C/min and hold for 3 hours;
从80℃开始升温到120℃,升温速率为4℃/min,保温8h。The temperature was raised from 80°C to 120°C at a heating rate of 4°C/min and kept for 8 hours.
烘干后获得碳化硅素坯;Obtain silicon carbide biscuit after drying;
将上述烘干之后的碳化硅素坯置于管式炉中并抽真空,然后从常温以3℃/min的升温速率升到800℃处理将其中的成型剂和润滑剂完全裂解。The dried silicon carbide blank was placed in a tube furnace and evacuated, and then the temperature was raised from room temperature to 800°C at a rate of 3°C/min to completely crack the molding agent and lubricant therein.
(4)碳化硅支撑体烧结:烘干裂解后的素坯放入烧结炉,烧结程序:从常温升温到600℃,升温速率为5℃/min,保温1h;从600℃升温到900℃,升温速率为5℃/min,保温1h;从900℃升温到1500℃,升温速率为3℃/min;在1500℃温度下,保温2h;然后随炉冷却;(4) Sintering of silicon carbide support body: put the biscuit after drying and cracking into the sintering furnace, the sintering procedure: from normal temperature to 600°C, the heating rate is 5°C/min, and keep for 1h; from 600°C to 900°C, The heating rate is 5°C/min, keep warm for 1h; from 900°C to 1500°C, the heating rate is 3°C/min; at 1500°C, keep warm for 2h; then cool with the furnace;
再将多孔碳化硅置于水中浸泡45min,然后换水,如此重复4次,获得多孔碳化硅陶瓷膜。The porous silicon carbide was then soaked in water for 45 minutes, and then the water was changed. This was repeated 4 times to obtain a porous silicon carbide ceramic membrane.
(5)碳化硅纳米纤维浆料制备、覆膜和烘干烧结:将碳化硅纳米纤维和聚乙烯醇PVA分别按照质量百分比为3wt%,0.4wt%浓度配置的碳化硅纳米纤维水浆料,刷涂在多孔碳化硅支撑体上,然后将覆膜层在烘箱内100℃烘干5h。(5) Preparation of silicon carbide nanofiber slurry, coating and drying and sintering: the silicon carbide nanofiber and polyvinyl alcohol PVA are respectively prepared according to the mass percentage of 3wt% and 0.4wt% concentration of silicon carbide nanofiber water slurry, Brush coating on the porous silicon carbide support, and then dry the coating layer in an oven at 100°C for 5h.
(6)碳化硅陶瓷膜烧结:将覆膜了碳化硅纳米纤维的碳化硅支撑体在高温炉中1100℃烧结2h,获得碳化硅陶瓷膜。(6) Sintering of silicon carbide ceramic membrane: the silicon carbide support body coated with silicon carbide nanofibers was sintered in a high-temperature furnace at 1100° C. for 2 hours to obtain a silicon carbide ceramic membrane.
通过测试算出此实施例2中得到的碳化硅陶瓷膜的气孔率为51.23%,体积密度为1.19g/cm3,氧化物含量约8%。Through testing, it is calculated that the porosity of the silicon carbide ceramic membrane obtained in Example 2 is 51.23%, the bulk density is 1.19 g/cm 3 , and the oxide content is about 8%.
实施例5Example 5
(1)配料及捏合成泥:将碳化硅粉体、硅碳复合粉体、NaCl-KCl熔盐、高岭土、羧甲基纤维素和甘油按照配方称量配料,其质量比为75:8:4:10:2.5:0.5。投入密闭混料机,加水搅拌混料,然后捏合成泥。(1) Batching and kneading into mud: weigh silicon carbide powder, silicon-carbon composite powder, NaCl-KCl molten salt, kaolin, carboxymethyl cellulose and glycerin according to the formula, and the mass ratio is 75:8: 4:10:2.5:0.5. Put it into a closed mixer, add water to stir the mixture, and then knead it into mud.
具体先原料在混料机中先干混25min,然后加水湿混40min,再进行练泥,并置于常温下陈腐24h。Specifically, the raw materials are dry-mixed in the mixer for 25 minutes, then wet-mixed with water for 40 minutes, and then the mud is kneaded, and placed at room temperature for 24 hours.
(2)挤出成型:捏合后的泥料在真空挤出成型机内挤出成型,控制成型温度,获得湿碳化硅支撑体素坯,切割成片状泥坯。(2) Extrusion molding: the kneaded mud material is extruded and formed in a vacuum extrusion molding machine, and the molding temperature is controlled to obtain a wet silicon carbide support body blank, which is cut into sheet-shaped mud blanks.
(3)陶瓷素坯烘干裂解:将湿碳化硅支撑体泥坯在烘箱内排除水分定型,具体按照以下特定阶梯控温方式进行处理:(3) Ceramic biscuit drying and cracking: the wet silicon carbide support body mud blank is removed from the moisture in the oven to shape, and it is specifically processed according to the following specific step temperature control method:
将泥坯置于常温下晾干12h,然后转移到烘箱内,从常温开始升温到50℃,升温速率为1℃/min,保温3h;Put the mud body at room temperature to dry for 12 hours, then transfer it to an oven, start heating from room temperature to 50°C, the heating rate is 1°C/min, and keep warm for 3h;
从50℃开始升温到80℃,升温速率为2℃/min,保温4h;Start to heat up from 50°C to 80°C with a heating rate of 2°C/min and hold for 4 hours;
从80℃开始升温到120℃,升温速率为2℃/min,保温7h。The temperature was raised from 80°C to 120°C at a heating rate of 2°C/min and kept for 7 hours.
烘干后获得碳化硅素坯;Obtain silicon carbide biscuit after drying;
将上述烘干之后的碳化硅素坯置于管式炉中并抽真空,然后从常温以3℃/min的升温速率升到800℃处理将其中的成型剂和润滑剂完全裂解。The dried silicon carbide blank was placed in a tube furnace and evacuated, and then the temperature was raised from room temperature to 800°C at a rate of 3°C/min to completely crack the molding agent and lubricant therein.
(4)碳化硅支撑体烧结:烘干裂解后的素坯放入烧结炉,烧结程序:从常温升温到600℃,升温速率为5℃/min,保温1h;从600℃升温到900℃,升温速率为5℃/min,保温1h;从900℃升温到1500℃,升温速率为3℃/min;在1500℃温度下,保温2h;然后随炉冷却;(4) Sintering of silicon carbide support body: put the biscuit after drying and cracking into the sintering furnace, the sintering procedure: from normal temperature to 600°C, the heating rate is 5°C/min, and keep for 1h; from 600°C to 900°C, The heating rate is 5°C/min, keep warm for 1h; from 900°C to 1500°C, the heating rate is 3°C/min; at 1500°C, keep warm for 2h; then cool with the furnace;
再将多孔碳化硅置于水中浸泡40min,然后换水,如此重复4次,获得多孔碳化硅陶瓷膜。The porous silicon carbide was then soaked in water for 40 minutes, and then the water was changed. This was repeated 4 times to obtain a porous silicon carbide ceramic membrane.
(5)碳化硅纳米纤维浆料制备、覆膜和烘干烧结:将碳化硅纳米纤维和聚乙烯醇PVA分别按照质量百分比为3wt%,0.4wt%浓度配置的碳化硅纳米纤维水浆料,刷涂在多孔碳化硅支撑体上,然后将覆膜层在烘箱内100℃烘干5h。(5) Preparation of silicon carbide nanofiber slurry, coating and drying and sintering: the silicon carbide nanofiber and polyvinyl alcohol PVA are respectively prepared according to the mass percentage of 3wt% and 0.4wt% concentration of silicon carbide nanofiber water slurry, Brush coating on the porous silicon carbide support, and then dry the coating layer in an oven at 100°C for 5h.
(6)碳化硅陶瓷膜烧结:将覆膜了碳化硅纳米纤维的碳化硅支撑体在高温炉中1600℃烧结2h,获得碳化硅陶瓷膜。(6) Sintering of silicon carbide ceramic membrane: the silicon carbide support body coated with silicon carbide nanofibers was sintered in a high-temperature furnace at 1600° C. for 2 hours to obtain a silicon carbide ceramic membrane.
通过测试算出此实施例2中得到的碳化硅陶瓷膜的气孔率为48.20%,体积密度为1.20g/cm3,氧化物含量约10%。Through testing, it is calculated that the porosity of the silicon carbide ceramic membrane obtained in Example 2 is 48.20%, the bulk density is 1.20 g/cm 3 , and the oxide content is about 10%.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111458282.6A CN113999046B (en) | 2021-12-02 | 2021-12-02 | A kind of preparation method of low temperature reaction sintering silicon carbide ceramic film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111458282.6A CN113999046B (en) | 2021-12-02 | 2021-12-02 | A kind of preparation method of low temperature reaction sintering silicon carbide ceramic film |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113999046A CN113999046A (en) | 2022-02-01 |
CN113999046B true CN113999046B (en) | 2023-03-10 |
Family
ID=79931086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111458282.6A Active CN113999046B (en) | 2021-12-02 | 2021-12-02 | A kind of preparation method of low temperature reaction sintering silicon carbide ceramic film |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113999046B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115093232A (en) * | 2022-07-08 | 2022-09-23 | 滁州学院 | A kind of molecular sieve membrane support and preparation method thereof |
CN115872761B (en) * | 2022-11-15 | 2023-08-29 | 湖南仁龙新材料有限公司 | Preparation method of silicon carbide smoke ceramic filter membrane |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11130558A (en) * | 1997-10-29 | 1999-05-18 | Tokai Konetsu Kogyo Co Ltd | Porous silicon carbide sintered body and method for producing the same |
CN101747078A (en) * | 2009-12-28 | 2010-06-23 | 黄黎敏 | Making method for sintering high-purity silicon carbide honeycomb ceramics by using nanometer silicon carbide as auxiliary |
CN102295458A (en) * | 2011-06-10 | 2011-12-28 | 江苏大阳光辅股份有限公司 | Preparation method of reaction sinteredsilicon carbide ceramic |
WO2012046897A1 (en) * | 2010-10-08 | 2012-04-12 | 성균관대학교 산학협력단 | Method for manufacturing porous silicon carbide ceramics |
CN102503538A (en) * | 2011-11-02 | 2012-06-20 | 浙江大学 | Continuously pore-forming silicon carbide ceramic material and preparation method for same |
CN104671788A (en) * | 2014-07-28 | 2015-06-03 | 上海柯瑞冶金炉料有限公司 | Method for sintering silicon carbide ceramic by in-situ synthetic nano SiC particle reinforcement reaction |
CN105367058A (en) * | 2014-08-22 | 2016-03-02 | 上海柯瑞冶金炉料有限公司 | Method of sintering high-toughness silicon carbide ceramic by using vacuum reaction |
CN105461306A (en) * | 2015-11-16 | 2016-04-06 | 石婷 | High-strength silicon carbide ceramic pipe and manufacturing method thereof |
CN105541333A (en) * | 2015-12-10 | 2016-05-04 | 江西理工大学 | Preparation method for mullite in-situ reinforced silicon carbide porous ceramic sintered at low temperature |
CN107663088A (en) * | 2017-08-03 | 2018-02-06 | 浙江理工大学 | A kind of preparation method of low-temperature sintering acid and alkali-resistance porous silicon carbide ceramic film |
CN108329033A (en) * | 2018-01-26 | 2018-07-27 | 山东理工大学 | Liquid-phase sintering multichannel silicon carbide ceramics membrane component and preparation method thereof |
CN109678522A (en) * | 2018-12-20 | 2019-04-26 | 中国科学院上海硅酸盐研究所 | A kind of normal pressure solid-phase sintered silicon carbide film support and preparation method thereof |
CN109824381A (en) * | 2019-03-21 | 2019-05-31 | 武汉工程大学 | A kind of silicon carbide ceramic membrane and its preparation method and use |
CN110698215A (en) * | 2019-10-29 | 2020-01-17 | 中国科学院上海硅酸盐研究所苏州研究院 | A kind of high temperature resistant corrosion resistant reaction sintered silicon carbide film support and preparation method thereof |
CN111574226A (en) * | 2020-05-26 | 2020-08-25 | 潍坊盛润特种陶瓷有限公司 | Preparation method of high-density low-free silicon content reaction sintered silicon carbide ceramic material |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007015550A1 (en) * | 2005-08-03 | 2007-02-08 | Ibiden Co., Ltd. | Jig for silicon carbide firing and method for producing porous silicon carbide body |
-
2021
- 2021-12-02 CN CN202111458282.6A patent/CN113999046B/en active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11130558A (en) * | 1997-10-29 | 1999-05-18 | Tokai Konetsu Kogyo Co Ltd | Porous silicon carbide sintered body and method for producing the same |
CN101747078A (en) * | 2009-12-28 | 2010-06-23 | 黄黎敏 | Making method for sintering high-purity silicon carbide honeycomb ceramics by using nanometer silicon carbide as auxiliary |
WO2012046897A1 (en) * | 2010-10-08 | 2012-04-12 | 성균관대학교 산학협력단 | Method for manufacturing porous silicon carbide ceramics |
CN102295458A (en) * | 2011-06-10 | 2011-12-28 | 江苏大阳光辅股份有限公司 | Preparation method of reaction sinteredsilicon carbide ceramic |
CN102503538A (en) * | 2011-11-02 | 2012-06-20 | 浙江大学 | Continuously pore-forming silicon carbide ceramic material and preparation method for same |
CN104671788A (en) * | 2014-07-28 | 2015-06-03 | 上海柯瑞冶金炉料有限公司 | Method for sintering silicon carbide ceramic by in-situ synthetic nano SiC particle reinforcement reaction |
CN105367058A (en) * | 2014-08-22 | 2016-03-02 | 上海柯瑞冶金炉料有限公司 | Method of sintering high-toughness silicon carbide ceramic by using vacuum reaction |
CN105461306A (en) * | 2015-11-16 | 2016-04-06 | 石婷 | High-strength silicon carbide ceramic pipe and manufacturing method thereof |
CN105541333A (en) * | 2015-12-10 | 2016-05-04 | 江西理工大学 | Preparation method for mullite in-situ reinforced silicon carbide porous ceramic sintered at low temperature |
CN107663088A (en) * | 2017-08-03 | 2018-02-06 | 浙江理工大学 | A kind of preparation method of low-temperature sintering acid and alkali-resistance porous silicon carbide ceramic film |
CN108329033A (en) * | 2018-01-26 | 2018-07-27 | 山东理工大学 | Liquid-phase sintering multichannel silicon carbide ceramics membrane component and preparation method thereof |
CN109678522A (en) * | 2018-12-20 | 2019-04-26 | 中国科学院上海硅酸盐研究所 | A kind of normal pressure solid-phase sintered silicon carbide film support and preparation method thereof |
CN109824381A (en) * | 2019-03-21 | 2019-05-31 | 武汉工程大学 | A kind of silicon carbide ceramic membrane and its preparation method and use |
CN110698215A (en) * | 2019-10-29 | 2020-01-17 | 中国科学院上海硅酸盐研究所苏州研究院 | A kind of high temperature resistant corrosion resistant reaction sintered silicon carbide film support and preparation method thereof |
CN111574226A (en) * | 2020-05-26 | 2020-08-25 | 潍坊盛润特种陶瓷有限公司 | Preparation method of high-density low-free silicon content reaction sintered silicon carbide ceramic material |
Non-Patent Citations (1)
Title |
---|
SiC 纳米线增强反应烧结碳化硅陶瓷的性能研究;曾凡等;《硅酸盐通报》;20180228;第37卷(第2期);第586-590页 * |
Also Published As
Publication number | Publication date |
---|---|
CN113999046A (en) | 2022-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104211422B (en) | Whisker reinforced SiC porous ceramic material and preparation method thereof | |
CN105884394B (en) | Method for preparing porous silicon carbide support body at low temperature | |
CN107663088B (en) | A kind of preparation method of low temperature sintering acid and alkali resistant porous silicon carbide ceramic membrane | |
CN110922204B (en) | A kind of preparation method of low temperature sintered alumina ceramic membrane | |
CN107619281B (en) | Preparation method of low-temperature sintered acid-alkali-resistant porous silicon carbide ceramic support | |
WO2016037316A1 (en) | Preparation method of sic porous ceramic material and porous ceramic material manufactured by using same | |
CN104261867B (en) | A kind of preparation method of pure carborundum porous ceramics film | |
CN108261928A (en) | Pure silicon carbide ceramics membrane component and preparation method thereof | |
CN107082628B (en) | Preparation method of porous ceramic support based on molecular sieve membrane synthesis residual liquid | |
CN113999046B (en) | A kind of preparation method of low temperature reaction sintering silicon carbide ceramic film | |
CN101412620A (en) | Method for preparing porous alumina ceramic supporting body with sol as additive | |
CN109279909B (en) | Preparation method of high-strength boron carbide porous ceramic | |
CN107399989A (en) | A kind of preparation method for strengthening Oxidation of SiC aluminium composite foamed ceramic | |
WO2017004776A1 (en) | Porous alumina ceramic ware and preparation method thereof | |
CN102557722A (en) | Method for preparing porous silicon carbide ceramic by using pore-forming agent | |
CN104261868B (en) | A kind of preparation method of silicon nitride combined silicon carbide porous ceramic film | |
CN108440008B (en) | A kind of high porosity ceramic filter material and preparation method thereof | |
CN101255057A (en) | A kind of prescription and preparation method of silicon nitride porous ceramics | |
CN103467072B (en) | A kind of preparation method of light microporous corundum ceramic | |
CN101913873A (en) | Preparation method of porous ceramic filter tube support body capable of improving strength and pore connectivity | |
CN108911779A (en) | Method for preparing porous silicon carbide ceramic tube at low temperature through extrusion molding | |
CN101181798A (en) | A multi-layer gradient porous ceramic mold for ceramic grouting molding and its manufacturing method | |
CN108395252A (en) | Liquid-phase sintering multichannel silicon carbide ceramic support body and preparation method thereof | |
CN114538950A (en) | A porous silicon carbide ceramic framework based on biomass powder as carbon source and preparation method thereof | |
CN104529522A (en) | Method for preparing oriented porous silicon nitride ceramics based on nylon fiber serving as pore forming agent |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |