CN113991273B - Power Amplifier - Google Patents
Power Amplifier Download PDFInfo
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- CN113991273B CN113991273B CN202111342999.4A CN202111342999A CN113991273B CN 113991273 B CN113991273 B CN 113991273B CN 202111342999 A CN202111342999 A CN 202111342999A CN 113991273 B CN113991273 B CN 113991273B
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- 230000015572 biosynthetic process Effects 0.000 claims abstract description 36
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 36
- 238000004806 packaging method and process Methods 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 31
- 230000009466 transformation Effects 0.000 claims description 19
- 239000000523 sample Substances 0.000 claims description 17
- 230000007704 transition Effects 0.000 claims description 14
- 230000003321 amplification Effects 0.000 claims description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000005672 electromagnetic field Effects 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Microwave Amplifiers (AREA)
Abstract
The power amplifier comprises a packaging box and an outer cover plate arranged at the top of the packaging box, wherein a driving amplifying module, a power distribution network module and a power synthesis network module are sequentially arranged in the packaging box from top to bottom, a radio frequency input connector is connected with the driving amplifying module, the driving amplifying module sends signals processed by the amplifier to the power distribution network module to be distributed into multiple paths of signals, the multiple paths of signals of the power distribution network module are respectively received by the power synthesis network module in multiple paths and are amplified and synthesized and output, the radio frequency output connector is connected with the power synthesis network module, the multiple paths of signals are respectively output from the radial direction of the power synthesis network module, and the multiple paths of signal reception is respectively received from the radial direction of the power distribution network module.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a 6-18 GHz 200W power amplifier.
Background
In recent years, with the high-speed development of civil and military communication technology systems, attention is paid to ultra-wideband high-power solid-state power amplifiers with reliable performance. The traditional power amplifier is mainly realized through a vacuum electron tube and a traveling wave tube, but the traditional vacuum electron tube amplifier has the characteristics of heavy weight, huge volume, extremely high working voltage requirement, short service life, poor reliability, high power output obtained by a power synthesis technology based on an integrated MMIC, small volume, high reliability, long service life, convenient use and the like, and has incomparable advantages of the traditional vacuum electron tube. Various new technologies and new ideas are continuously developed in recent years, and various ideas and methods for solving problems are provided for the research and development of ultra-wideband high-power solid-state power amplifiers.
The radial power synthesis technology has the characteristics of small insertion loss, no restriction of the rule of the traditional binary system on the synthesis path number, and wide working frequency and can be widely applied to broadband high-power synthesis. However, the conventional 6-18 ghz radial power synthesis is generally based on a gradual coaxial structure, the coaxial is radially divided into a plurality of parts, each part represents a power module, a power amplifier chip is mounted on the power modules, and finally the power modules are newly combined into the coaxial structure. The structure can realize ultra-wideband operation, but is not friendly to high-power heat dissipation due to the characteristics of a cylindrical structure, each module cannot meet the boundary condition of an electromagnetic field, a testable unit can be formed after the modules are combined, the individual power modules cannot be tested individually, testing and maintenance are extremely difficult, the chips mounted on each individual module are limited, and secondary power is integrated.
Disclosure of Invention
It is an object of the present invention to provide a power amplifier that solves some of the problems of the prior art with power splitting.
The aim of the invention is mainly realized by the following technical scheme:
the power amplifier comprises a packaging box and an outer cover plate arranged at the top of the packaging box, wherein a driving amplifying module, a power distribution network module and a power synthesis network module are sequentially arranged in the packaging box from top to bottom;
The driving amplifying module sends the signals processed by the amplifier to the power distribution network module to be distributed into multiple paths of signals, the multiple paths of signals of the power distribution network module are respectively received by the power synthesis network module in multiple paths and amplified and synthesized to be output, the radio frequency output connector is connected with the power synthesis network module, the multiple paths of signals are respectively output from the radial direction of the power synthesis network module, and the multiple paths of signal receiving is respectively received from the radial direction of the power distribution network module.
As a preferred solution, the rf input connector and the rf output connector are both disposed on the sides of the package.
As a preferred technical scheme, the driving amplification module comprises a board-mounted structure body, an amplifier mounting cavity groove is formed in the structure body, and an amplifier is mounted on the structure body and is connected with the radio frequency input connector and the power distribution network module through conductors.
The power distribution network module comprises a similar double-ridge waveguide outer cavity and a cover plate, wherein a conductor is arranged at the center of the similar double-ridge waveguide outer cavity, an annular similar double-ridge waveguide lower conductor step is arranged around the center of the similar double-ridge waveguide outer cavity, the cover plate seals the impedance transformation step to form a similar double-ridge waveguide cavity, a plurality of microstrip cavities are arranged in the similar double-ridge waveguide outer cavity around the center of the circle, a similar double-ridge waveguide short-circuit transformation section is arranged between the microstrip cavities and the similar double-ridge waveguide lower conductor step, and a microwave medium substrate is arranged in the similar double-ridge waveguide short-circuit transformation section and the microstrip cavities.
The power synthesis network module comprises a similar double-ridge waveguide outer cavity and a cover plate, wherein a conductor is arranged at the center of the similar double-ridge waveguide outer cavity and is connected to a conductor and a radio frequency output connector which are arranged at the center of the power distribution network module;
The outer cavity of the similar double-ridge waveguide is provided with an annular similar double-ridge waveguide lower conductor step around the circle center, and the cover plate seals the impedance transformation step to form a similar double-ridge waveguide cavity; a plurality of microstrip cavities are further arranged in the double-ridge-like waveguide outer cavity around the circle center, and a double-ridge-like waveguide short circuit conversion section is arranged between the microstrip cavities and the double-ridge-like waveguide lower conductor steps; the microwave medium substrate is arranged in the similar double-ridge waveguide short-circuit conversion section and the microstrip cavity.
As a preferable technical scheme, an amplifier mounting cavity groove provided with an amplifier is also arranged in the similar double-ridge waveguide outer cavity of the power synthesis network module, the amplifier mounting cavity groove is positioned in the similar double-ridge waveguide outer cavity, and the amplifier is connected with the microwave medium substrate to amplify signals.
As a preferable technical scheme, the microwave dielectric substrate comprises an annular substrate short-circuit transition section and microstrip lines uniformly distributed on the substrate short-circuit transition section along the circumference.
As a preferable technical scheme, a plurality of upper and lower connection conductors are respectively arranged between the power distribution synthesis network module and the power distribution network module, so that one-to-one corresponding transmission of multiple paths of signals is completed.
As a preferable technical scheme, a conductor arranged at the center of a similar double-ridge waveguide outer cavity of the power synthesis network module is a combining probe, a part connected with the conductor at the center of the power distribution network module is vertical, a part connected with the radio frequency output connector is horizontal, the transition from vertical to horizontal is carried out, the inner side is vertical transition, and the outer side is chamfer transition; the radial cross-sectional effect of the transverse part is square, the vertical part consists of three structures with different shapes, and the radial cross-sectional effect of the vertical part is respectively round, round and square from one end far away from the transverse part to one end connected with the transverse part, and the diameter of the round in the middle is smaller than that of the round of the previous part.
Compared with the prior art, the invention has the following beneficial effects:
the invention can realize ultra-wideband and octave work, and the power synthesis network can realize 6-18 GHz full-frequency-band coverage work;
The ultra-low insertion loss can be realized by adopting a coaxial structure and a similar double-ridge waveguide ladder conversion structure;
the invention can realize convenient chip integration, directly converts the double-ridge waveguide ladder conversion structure into a microstrip line structure which is convenient for chip integration, and directly integrates with the chip;
the invention can realize high-efficiency heat dissipation, and the amplifier module needing heat dissipation is converted into a planar heat dissipation structure, so that the problem of high-power heat dissipation can be solved by utilizing the traditional heat dissipation mode.
The invention is based on the radial power distributor principle, and can fundamentally solve the problems of 6-18 GHz broadband high-power heat dissipation, incapability of testing and difficult assembly. The power amplifier with important heat dissipation is arranged at the lowest layer by adopting a three-dimensional structure, each amplifier module at the lower layer can be independently fed into a radio frequency signal to independently test amplitude and phase, the distribution network driving amplifying part is arranged at the upper layer of the power amplifier, the heat dissipation pressure of an upper circuit is smaller, meanwhile, the upper circuit can be integrated with the driving amplifier, the single module gain of the amplifier can be effectively improved, the upper circuit and the lower circuit are connected through an SMP (symmetric multi-processor) connecting module, and the connecting module can simultaneously enhance the structural strength of the amplifier. The invention is based on radial power distribution, and can fundamentally solve the problems of 6-18 GHz broadband high-power heat dissipation, incapability of testing and difficult assembly. The power amplifier with important heat dissipation is arranged at the lowest layer by adopting a three-dimensional structure, each amplifier module at the lower layer can be independently fed into a radio frequency signal to independently test amplitude and phase, the distribution network driving amplifying part is arranged at the upper layer of the power amplifier, the heat dissipation pressure of an upper circuit is smaller, meanwhile, the upper circuit can be integrated with the driving amplifier, the single module gain of the amplifier can be effectively improved, the upper circuit and the lower circuit are connected through an SMP (symmetric multi-processor) connecting module, and the connecting module can simultaneously enhance the structural strength of the amplifier.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
FIG. 1 is an exploded view of the present invention;
FIG. 2 is a cross-sectional view of the present invention;
FIG. 3 is a schematic diagram of the structure of the SMP up and down connection module;
FIG. 4 is a schematic diagram of the structure of a shunt probe;
FIG. 5 is a schematic diagram of the structure of a combiner probe;
FIG. 6 is a cross-sectional view of a combiner probe;
FIG. 7 is a schematic diagram of a driving amplification module;
FIG. 8 is a schematic diagram of a power distribution network module;
FIG. 9 is a schematic diagram of a power combining network module;
FIG. 10 is a schematic view of the structure of the lower cover plate;
FIG. 11 is a schematic structural view of a square coaxial slot cover;
Fig. 12 is a schematic diagram of a microstrip line structure in a driving amplification module;
FIG. 13 is a schematic structural view of an upper microwave dielectric substrate;
FIG. 14 is a schematic structural view of an underlying microwave dielectric substrate;
fig. 15 is a schematic structural diagram of microstrip lines in the SMP up-down connection module;
fig. 16 shows the actual power test results of the embodiment.
The microwave antenna is characterized by comprising a 1-packaging box, a 2-outer cover plate, a 3-power management module, a 4-driving amplification module, a 5-power distribution network module, a 6-power synthesis network module, a 7-radio frequency input connector, an 8-radio frequency output connector, a 9-upper microwave dielectric substrate, a 10-lower microwave dielectric substrate, an 11-upper SMP double-ridge-waveguide external cavity, a 12-lower SMP double-ridge-waveguide external cavity, a 13-SMP upper and lower connection module, a 14-upper cover plate, a 15-lower cover plate, a 16-amplifier mounting cavity, a 17-microstrip cavity, a 18-microstrip line, a 19-coaxial square groove, a 20-coaxial square groove cover, a 21-amplifier mounting cavity, a 22-combining probe, a 23-shunt probe, a 24-type double-ridge waveguide lower conductor step I, a 25-type double-ridge waveguide lower conductor step II, a 26-type double-ridge waveguide lower conductor step III, a 27-upper type double-ridge waveguide external cavity, a 28-lower type double-ridge waveguide external cavity, a 29-type double-ridge waveguide short-short circuit segment, a 30-coaxial transition segment and a 31-short circuit impedance transformation segment.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.
Examples
As shown in fig. 1-2, the power amplifier comprises a packaging box and an outer cover plate arranged on the top of the packaging box. The package is used for accommodating electronic components.
The power management module, the driving amplification module, the power distribution network module and the power synthesis network module are sequentially arranged in the packaging box from top to bottom. The power management module supplies power to the power utilization elements of the amplifier.
The power synthesis system comprises a power synthesis network module, a drive amplification module, a radio frequency input connector, a power distribution network module, a power synthesis network module and a radio frequency output connector, wherein the radio frequency input connector is connected with the drive amplification module, the drive amplification module sends signals processed by the amplifier to the power distribution network module to be distributed into multiple paths of signals, the multiple paths of signals are respectively and correspondingly sent to the power synthesis network module to be received and amplified and then synthesized and output, and the radio frequency output connector is connected with the power synthesis network module. The radio frequency input connector and the radio frequency output connector respectively penetrate out from two opposite side surfaces of the packaging box.
In this embodiment, the driving amplifier module, the power distribution network module, and the power combining network module are all designed independently, and the structures thereof are described in one-to-one manner.
As shown in fig. 7, the driving amplification module includes a structure body close to a circular plate shape, and an amplifier mounting cavity groove and a microstrip cavity groove are formed in the structure body. In this embodiment, for convenience of connection, the microstrip cavity is divided into two sections, and the amplifier mounting cavity is located in the two sections of microstrip cavity. An amplifier is arranged in the amplifier mounting cavity groove, and a microstrip line is arranged in the microstrip cavity groove. Since the microstrip cavity slot is divided into two sections, the corresponding microstrip line in the microstrip cavity slot is also divided into two sections, as shown in fig. 12. The input end and the output end of the amplifier are respectively connected with two sections of microstrip lines, one section of microstrip line is connected with the radio frequency input connector, and the other section of microstrip line is connected to the power distribution network module through the shunt probe. The structure of the shunt probe is shown in fig. 4. On the structure body of the driving amplification module, a step with an ascending order is formed from the bottom of the amplifier installation cavity groove to the bottom of the two sections of microstrip cavity grooves.
As shown in fig. 8, the power distribution network module includes an upper cover plate, an upper layer double-ridge waveguide outer cavity. The upper layer double-ridge waveguide outer cavity is internally provided with a cavity, the top surface of the cavity is provided with a circular opening, and the upper layer cover plate seals the circular opening at the top of the upper layer double-ridge waveguide outer cavity.
The upper cover plate is integrally formed at the bottom of the structure body of the driving amplification module, and the center of the upper cover plate is provided with a hole for a shunt probe for coaxial switching to pass through, and the hole is a reducing hole, so that an impedance transformation step with one step rising from the center of the circle to the outside is formed.
The circular opening is formed in the center of the upper layer double-ridge waveguide outer cavity, the coaxial switching inner conductor is arranged at the bottom of the upper layer double-ridge waveguide outer cavity, the annular impedance transformation step which forms one-time lifting and changing steps from outside to inside is arranged on the coaxial switching inner conductor, and the impedance transformation step extends into the inner cavity of the upper layer double-ridge waveguide outer cavity from the circular opening. The circular opening of the bottom surface of the outer cavity of the upper layer similar double-ridge waveguide is sequentially provided with an annular step-shaped similar double-ridge waveguide lower conductor step I, a similar double-ridge waveguide lower conductor step II and a similar double-ridge waveguide lower conductor step III which are gradually stepped from inside to outside. The center of the coaxial switching inner conductor penetrates through the coaxial switching inner conductor feeder, the top of the coaxial switching inner conductor feeder is spliced with the shunt probe, and the bottom of the coaxial switching inner conductor feeder is spliced with the combining probe.
In this embodiment, the upper-layer dual-ridge waveguide cavity is formed by matching the impedance transformation step of the upper-layer cover plate with the dual-ridge waveguide lower conductor step of the upper-layer dual-ridge waveguide outer cavity.
A plurality of microstrip cavity grooves (50 ohm microstrip cavity grooves) are uniformly formed in the upper layer double-ridge waveguide outer cavity around the circle center, and an annular double-ridge waveguide short-circuit transformation section is also arranged in the upper layer double-ridge waveguide outer cavity and communicated with the microstrip cavity grooves. An annular limiting wall is arranged between the similar double-ridge waveguide short-circuit conversion section and the similar double-ridge waveguide lower conductor step III, the inner annular surface of the microwave medium substrate abuts against the annular limiting wall, limiting of the microwave medium substrate is achieved, and contact short circuit is achieved.
As a preferable mode, the short-circuit conversion section of the similar double-ridge waveguide adopts a microwave printed board technology, and the front conductor of the upper microwave dielectric substrate is connected to the ridge of the similar double-ridge waveguide in a through hole mode to realize the conversion of the ridge waveguide.
Specifically, as shown in fig. 13, the upper microwave dielectric substrate includes an annular substrate short-circuit transition and microstrip lines (50 ohms) uniformly distributed on the substrate short-circuit transition along the circumference. The 50 ohm microstrip line is positioned in the microstrip cavity groove. The microstrip cavity slot serves as a shield.
In this embodiment, the formed double-ridge-like waveguide cavity converts the coaxial converted electromagnetic field into the electromagnetic field of the waveguide structure, and then distributes multiple paths of power.
As shown in fig. 9, the power combining network module includes a lower cover plate and a lower double-ridge waveguide-like outer cavity. The lower layer double-ridge waveguide outer cavity is internally provided with a cavity, the top surface of the cavity is provided with a circular opening, and the lower layer cover plate seals the circular opening at the top of the lower layer double-ridge waveguide outer cavity.
The center of the lower cover plate is provided with a hole for the combination probe to pass through, and the hole is a reducing hole, so that an impedance transformation step with one-time step reduction is formed from the inside of the center of the circle.
The circle center of the lower layer double-ridge waveguide outer cavity is provided with a circular opening, and the circular opening of the bottom surface of the lower layer double-ridge waveguide outer cavity is sequentially provided with an annular step-shaped double-ridge waveguide lower conductor step I, a double-ridge waveguide lower conductor step II and a double-ridge waveguide lower conductor step III which gradually rise from inside to outside.
The lower-layer double-ridge waveguide cavity is formed by matching an impedance transformation step of the lower-layer cover plate with a double-ridge waveguide lower conductor step of the lower-layer double-ridge waveguide outer cavity.
And a plurality of microstrip cavity grooves (50 ohm microstrip cavity grooves) and amplifier mounting cavity grooves which are in one-to-one correspondence with the microstrip cavity grooves are uniformly arranged in the lower layer double-ridge waveguide outer cavity around the circle center. In order to facilitate conductor connection, the microstrip cavity groove of the lower-layer double-ridge waveguide outer cavity is divided into two sections, and the amplifier mounting cavity groove is positioned between the two sections of microstrip cavity grooves corresponding to the microstrip cavity groove. And the ascending steps are formed from the bottom of the amplifier mounting cavity groove to the bottom of the microstrip cavity groove. The microstrip cavity groove is positioned at the periphery of the step III of the conductor under the similar double-ridge waveguide. The lower layer double-ridge waveguide outer cavity is also internally provided with an annular double-ridge waveguide short-circuit conversion section which is communicated with the microstrip cavity groove. An annular limiting wall is arranged between the similar double-ridge waveguide short-circuit conversion section and the similar double-ridge waveguide lower conductor step III, the inner annular surface of the lower microwave dielectric substrate abuts against the annular limiting wall, limiting of the lower microwave dielectric substrate is achieved, and contact short circuit is achieved. The lower layer double-ridge waveguide outer cavity is internally and uniformly provided with amplifier mounting cavity grooves around the circle center, the amplifier mounting cavity grooves are in one-to-one correspondence with the microstrip cavity grooves of the lower layer double-ridge waveguide outer cavity, and the circumference of the amplifier cavity grooves is located at the periphery of the circumference of the microstrip cavity grooves. An amplifier is arranged in the amplifier mounting cavity groove.
As shown in fig. 14, the lower microwave dielectric substrate includes an annular substrate short-circuit transition section and microstrip lines (50 ohms) uniformly distributed on the substrate short-circuit transition section along the circumference, and the microstrip lines are also divided into two sections for matching with the microstrip cavity grooves divided into two sections.
The short-circuit conversion section of the similar double-ridge waveguide adopts a microwave printed board technology, and a front conductor of a microwave medium substrate (the same as the microwave medium substrate) is connected to the ridge of the similar double-ridge waveguide in a through hole mode to realize the conversion of the ridge waveguide.
The bottom surface of the lower layer double-ridge waveguide outer cavity is provided with a coaxial square groove which is communicated with the circular opening. As shown in fig. 11, a coaxial square groove is arranged in the groove, and can seal the notch to form a cavity for accommodating the combining probe. The structure of the combining probe is shown in fig. 5-6, the part connected with the branching probe is vertical, the part connected with the radio frequency output connector is horizontal, the transition from vertical to horizontal is vertical, the inner side is vertical, and the outer side is chamfer. The radial cross-sectional effect of the transverse part is square, the vertical part consists of three structures with different shapes, and the radial cross-sectional effect of the vertical part is respectively round, round and square from one end far away from the transverse part to one end connected with the transverse part, and the diameter of the round in the middle is smaller than that of the round of the previous part. The combination probe in the traditional structure adopts a circular coaxial structure for output, the direction of an output port is output from the bottom surface of the amplifier, so that the area loss of the bottom surface of the amplifier is larger, the circular coaxial bending is realized, the realizability of machinery is considered, the output interface is replaced by a rectangular coaxial line, the processing is convenient, and the field structure of the original coaxial structure is better reserved. The middle involves an impedance transformation from circular coaxial to rectangular coaxial.
Further, the power distribution network module and the power synthesis network module are connected through a plurality of SMP up-down connection modules. The SMP up and down connection module is shown in fig. 3. The module is connected with the power distribution network module and the power network synthesis module, the input and output interfaces are designed by adopting an SMP (symmetric multi-processor), and the microstrip line is connected with the SMP in a vertical transitional way.
Specifically, the outer circumferential sides of the upper layer double-ridge waveguide outer cavity and the lower layer double-ridge waveguide outer cavity are respectively distributed with an upper layer SMP double-negative adapter and a lower layer SMP double-negative adapter around the circle center, and the number of the SMP double-negative adapters corresponds to the number of the microstrip cavity grooves one by one.
One end of the upper SMP double-negative adapter is correspondingly connected with the upper microwave dielectric substrate. One end of the lower SMP double-negative adapter is correspondingly connected with the lower microwave dielectric substrate respectively.
The other ends of the upper and lower SMP double-negative adapters are connected to the SMP upper and lower connection modules. The upper and lower SMP connection module comprises a structural body and a microstrip cavity groove arranged in the structural body, wherein a microstrip line is arranged in the microstrip cavity groove, and the microstrip line structure is shown in figure 15. The microstrip line is connected to the upper SMP double-negative adapter.
In this embodiment, the signal is input from the rf input connector, processed by the amplifier, and then sent to the power distribution network module to be distributed into multiple paths, and then received and amplified by the power synthesis network module in multiple paths to be synthesized into one path of output.
As shown in FIG. 16, the typical value of the power amplification saturated output power is 53.5dBm and the high-end output power is about 52.5dBm within the frequency range of 6-18 GHz, so as to achieve the design objective.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and logic principles of the invention are intended to be included within the scope of the invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111342999.4A CN113991273B (en) | 2021-11-12 | 2021-11-12 | Power Amplifier |
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| CN202111342999.4A CN113991273B (en) | 2021-11-12 | 2021-11-12 | Power Amplifier |
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| CN113991273A CN113991273A (en) | 2022-01-28 |
| CN113991273B true CN113991273B (en) | 2024-12-06 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203057081U (en) * | 2012-12-31 | 2013-07-10 | 南京才华科技集团有限公司 | Power amplifier of Q-waveband millimeter waves |
| JP2017076881A (en) * | 2015-10-15 | 2017-04-20 | 新日本無線株式会社 | Power combiner/distributor |
| CN216903291U (en) * | 2021-11-12 | 2022-07-05 | 成都浩翼创想科技有限公司 | Novel power amplifier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242984B1 (en) * | 1998-05-18 | 2001-06-05 | Trw Inc. | Monolithic 3D radial power combiner and splitter |
| US9496831B2 (en) * | 2014-10-17 | 2016-11-15 | Daico Industries, Inc. | Combined high power rf/microwave amplifier with multiple power amplifier units and automatic failure protection |
| CN108809264A (en) * | 2018-04-24 | 2018-11-13 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | S frequency-band solid-state power amplifiers |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203057081U (en) * | 2012-12-31 | 2013-07-10 | 南京才华科技集团有限公司 | Power amplifier of Q-waveband millimeter waves |
| JP2017076881A (en) * | 2015-10-15 | 2017-04-20 | 新日本無線株式会社 | Power combiner/distributor |
| CN216903291U (en) * | 2021-11-12 | 2022-07-05 | 成都浩翼创想科技有限公司 | Novel power amplifier |
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