CN113963388A - GOA drive circuit and its control method, device and electronic equipment - Google Patents
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Abstract
The embodiment of the disclosure provides a GOA driving circuit, a control method and a control device thereof, and electronic equipment, wherein the GOA driving circuit comprises: the device comprises a plurality of GOA circuits in a cascade state, wherein one GOA circuit is used for controlling a row of photoelectric sensors; and each group of thin film transistors comprises two thin film transistors, and each group of thin film transistors is arranged in front of the output end of the GOA circuit corresponding to every two rows of photoelectric sensors, and controls the two thin film transistors to be not started simultaneously through clock control signals so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously. According to the embodiment of the disclosure, switching of different functions is flexibly realized, the existing process flow is not changed, function reuse is realized on the premise of increasing less manufacturing cost, and the performance of a product is improved.
Description
Technical Field
The present disclosure relates to the field of display, and in particular, to a GOA driving circuit, a control method and apparatus thereof, and an electronic device.
Background
The photoelectric sensor has wide application scenes, including fingerprint identification, palm print identification, finger vein identification, heart rate and blood oxygen detection in health monitoring items and the like, wherein the fingerprint identification utilizes the difference of the reflectivity of the ridges of the valleys to light rays, and the difference of the signal quantity received by the photoelectric sensor converts the signal quantity into a gray value, so that a fingerprint image can be read. At present, fingerprint identification is widely applied to unlocking under a mobile phone screen.
The finger vein recognition technology is a biological recognition technology which is characterized in that the identification is carried out by penetrating near infrared rays through fingers to obtain finger vein images, and the technology is high in precision and high in speed and is more advanced in the world. Among various biometrics technologies, since recognition is performed using an internal feature of a living body that is invisible from the outside, attention is being paid to the biometrics technology having high anti-counterfeiting performance. Compared with other biological identification, finger vein identification has more advantages: the non-contact measurement can be realized, the sanitation is good, and the method is easy to be accepted by users; the internal information of the human body is not influenced by the rough epidermis and the external environment (humidity and temperature); the method has the advantages of wide use population, high accuracy, and no copying or counterfeiting.
The way that health monitoring (heart rate and blood oxygen detection) is combined with a photosensor is mainly based on Photoplethysmography (PPG), and when light penetrates through skin tissue and is reflected to a photosensor, the light is attenuated to a certain extent. The absorption of light is substantially constant (provided that there is no substantial movement of the measurement site) like muscles, bones, veins and other connective tissue, but the absorption of light naturally varies due to the flow of blood in the arteries, which is different from blood. When we convert light into an electrical signal, it is because the absorption of light by arteries changes and the absorption of light by other tissues is basically unchanged, and the resulting signal can be divided into a Direct Current (DC) signal and an Alternating Current (AC) signal. The AC signal is extracted to reflect the characteristics of blood flow.
However, when the existing photoelectric sensor is applied, the corresponding GOAs are set for different functions to be realized, different typesetting needs to be designed for different functions, so that various typesetting needs to be performed, the production cost is high, the product compatibility is poor, and the overall performance of the product cannot be improved.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide a GOA driving circuit, a control method thereof, a device thereof, and an electronic apparatus, so as to solve the following problems in the prior art: when the existing photoelectric sensor is applied, the corresponding GOA is set for different functions to be realized to control, different typesetting needs to be designed for different functions, so that various typesetting is needed, the production cost is high, the product compatibility is poor, and the overall performance of the product cannot be improved.
In one aspect, an embodiment of the present disclosure provides a GOA driving circuit, including: the device comprises a plurality of GOA circuits in a cascade state, wherein one GOA circuit is used for controlling a row of photoelectric sensors; and each group of thin film transistors comprises two thin film transistors, and each group of thin film transistors is arranged in front of the output end of the GOA circuit corresponding to every two rows of photoelectric sensors, and controls the two thin film transistors to be not started simultaneously through clock control signals so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
In some embodiments, each thin film transistor corresponds to one clock signal control line.
In some embodiments, the thin film transistor is an N-type thin film transistor.
In some embodiments, each set of thin film transistors is disposed before the output end of each two rows of corresponding GOA circuits, and includes: two ends of the first thin film transistor are respectively connected with the first output end and the second output end, and the second thin film transistor is arranged between the second GOA circuit and the second output end;
the first output end is an output end corresponding to the first GOA circuit, the second output end is an output end corresponding to the second GOA circuit, and the line numbers of the photoelectric sensors controlled by the first GOA circuit and the second GOA circuit are adjacent.
In some embodiments, the first GOA circuit corresponds to an odd row line number and the second GOA circuit corresponds to an even row line number.
In some embodiments, a drain of the first thin film transistor is connected to the first output terminal, a source of the first thin film transistor is connected to the second output terminal, a drain of the second thin film transistor is connected to the second output terminal, and a source of the second thin film transistor is connected to the second GOA circuit.
On the other hand, an embodiment of the present disclosure provides a method for controlling a GOA driving circuit, where the method is used to control the GOA driving circuit according to any embodiment of the present disclosure, and includes: detecting whether a working mode switching signal is received; and under the condition of receiving a working mode switching signal, sending a clock control signal according to a working mode to be switched, and starting a thin film transistor corresponding to the working mode according to the clock control signal so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
On the other hand, an embodiment of the present disclosure provides a control device for a GOA driving circuit, configured to control the GOA driving circuit according to any embodiment of the present disclosure, including: the detection module is used for detecting whether a working mode switching signal is received or not; and the switching module is used for sending a clock control signal according to the working mode to be switched under the condition of receiving the working mode switching signal, and starting the thin film transistor corresponding to the working mode according to the clock control signal so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
On the other hand, an embodiment of the present disclosure provides an electronic device, which at least includes: the GOA driving circuit according to any one of the embodiments of the present disclosure.
In some embodiments, further comprising: the control device of the GOA driving circuit of the embodiment of the disclosure.
The embodiment of the disclosure changes on the existing GOA framework, but does not change the core framework and the working mode of the original GOA circuit, but two thin film transistors are added before the output end of every two lines of GOA, the two thin film transistors control the on state through the high and low levels of the control signal all the time, and then one line of photoelectric sensors can be controlled to work independently or two lines of photoelectric sensors can be controlled to work simultaneously, the GOA circuits with different functions can be compatible, the switching of different functions can be realized flexibly, the scheme does not change the existing process flow, the function multiplexing is realized on the premise of increasing less manufacturing cost, and the performance of the product is improved.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present disclosure, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a GOA driving circuit provided in an embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating the operation of a high DPI mode photosensor according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram illustrating the operation of a high-photosensitivity mode photosensor according to an embodiment of the present disclosure;
FIG. 4 is a schematic circuit diagram of a conventional GOA circuit;
fig. 5 is a schematic diagram illustrating a configuration of a GOA driving circuit according to an embodiment of the disclosure;
FIG. 6 is a timing diagram illustrating mode switching control provided by an embodiment of the present disclosure;
fig. 7 is a flowchart of a control method of a GOA driving circuit according to an embodiment of the disclosure;
fig. 8 is a schematic structural diagram of a control device of a GOA driving circuit according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
Because the different application scenes (fingerprint identification, finger vein identification, health monitoring, etc.) of photoelectric sensor (sensor) are different to the requirement of sensor, for example, fingerprint identification or palm print identification need relatively high DPI (Dots Per Inch Per Inc), be favorable to reading more line details, and finger vein or health monitoring, mainly detect the information of vein blood vessel and artery blood vessel, the blood vessel size is big for the finger line, and the signal volume that light reflected back through the blood vessel is less, need great sensor area, just can receive sufficient light and discern.
Based on the above considerations, the embodiment of the present disclosure provides a GOA driver circuit capable of switching between dual DPI modes to meet the above requirements, where the same sensor (including multiple individual sensors) can be compatible with different application scenarios, thereby reducing the production cost and development cost increased by different typesetting of different functional designs, and one design of the GOA driver circuit can implement different functions, thereby increasing the added value of the product.
The structural schematic of the GOA driving circuit provided in the embodiments of the present disclosure may be as shown in fig. 1, and includes:
the device comprises a plurality of GOA circuits in a cascade state, wherein one GOA circuit is used for controlling a row of photoelectric sensors; the multiple groups of thin film transistors (indicated as a group in a dotted line frame, and only one dotted line frame is drawn in the figure for illustration), each group of thin film transistors comprises two thin film transistors, each group of thin film transistors is arranged in front of the output end of the GOA circuit corresponding to every two rows of photoelectric sensors, and the two thin film transistors are controlled by clock control signals to be not started simultaneously so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
In the above fig. 1, an N-type thin film transistor (that is, NTFT) is taken as an example for illustration, and each thin film transistor corresponds to one clock signal control line, in a specific implementation, the type of the thin film transistor is not limited, and the clock signal control lines are not provided with so-called several clock signal control lines, as long as two thin film transistors can be controlled not to be turned on simultaneously, and thus one row of photosensors can be controlled to operate independently or two rows of photosensors can be controlled to operate simultaneously.
The embodiment of the disclosure changes on the existing GOA framework, but does not change the core framework and the working mode of the original GOA circuit, but two thin film transistors are added before the output end of every two lines of GOA, the two thin film transistors control the on state through the high and low levels of the control signal all the time, and then one line of photoelectric sensors can be controlled to work independently or two lines of photoelectric sensors can be controlled to work simultaneously, the GOA circuits with different functions can be compatible, the switching of different functions can be realized flexibly, the scheme does not change the existing process flow, the function multiplexing is realized on the premise of increasing less manufacturing cost, and the performance of the product is improved.
In fig. 1, two ends of the first thin film transistor are respectively connected to the first output terminal and the second output terminal, and the second thin film transistor is disposed between the second GOA circuit and the second output terminal; the first output end is an output end corresponding to the first GOA circuit, the second output end is an output end corresponding to the second GOA circuit, and the line numbers of the photoelectric sensors controlled by the first GOA circuit and the second GOA circuit are adjacent. Specifically, the drain of the first thin film transistor is connected to the first output terminal, the source of the first thin film transistor is connected to the second output terminal, the drain of the second thin film transistor is connected to the second output terminal, and the source of the second thin film transistor is connected to the second GOA circuit. Of course, this connection method is only a connection method based on that the thin film transistor is an N-type thin film transistor, and if the type of the thin film transistor is changed, the corresponding connection method can also be changed adaptively, but no matter what kind of change, it is only necessary to control one row of photosensors to operate independently and control two rows of photosensors to operate simultaneously.
The first GOA circuit corresponds to odd row numbers and the second GOA circuit corresponds to even row numbers, and the row numbers of the first GOA circuit and the second GOA circuit can be adaptively adjusted due to adjustment of types and positions of the two thin film transistors, which is within the protection scope of the embodiments of the disclosure.
Hereinafter, the above-described embodiments will be exemplarily described with reference to the drawings, and in the following embodiments, the first thin film transistor and the second thin film transistor are illustrated by NTFT.
As shown in fig. 2 and fig. 3, fig. 2 is a schematic diagram of a photoelectric sensor required by a high DPI mode, which is generally applied to fingerprint recognition or palm print recognition, in which more detailed information needs to be acquired, and fig. 3 is a schematic diagram of a photoelectric sensor required by a high light sensitivity mode, which is generally applied to finger vein recognition and health monitoring, in which a larger area of the photoelectric sensor is required to receive and recognize enough light. The GOA circuit groups in fig. 2 and 3 include a plurality of GOA circuits, and each GOA circuit is used to control one row of photosensors.
The sensor is the minimum photosensitive unit of the sensing area, which is closely related to the image resolution, the embodiment of the disclosure sets the high DPI mode to the first mode, and sets the high photosensitive volume mode to the second mode, wherein the first mode is 1 × 1sensor shown in fig. 2, each sensor includes a TFT, and can independently read signals, the second mode is 2 × 2sensor shown in fig. 3, four sensors read simultaneously, effectively combine into one large sensor, and the photosensitive area is increased four times as much as the original one. Open the ascending while of line side, realize by the GOA drive circuit of this disclosed embodiment, in the column direction, every frame all reads simultaneously, ROIC only need add up the value of every two columns can, just so can realize 2 x 2 sensor's effect.
Fig. 4 is a schematic circuit diagram of a conventional GOA circuit (i.e., a cascaded GOA circuit), fig. 5 is a schematic diagram of a GOA driving circuit disposed in the GOA circuit of fig. 4 according to an embodiment of the disclosure, and fig. 6 is a timing diagram of mode switching control.
The GOA driving circuit provided in the embodiments of the present disclosure is not only applicable to the GOA circuit shown in fig. 4, but also applicable to all GOA circuits, including different circuit structures of CMOS type and NMOS type. The two newly-added NTFTs provided by the embodiment of the disclosure are connected to the output end of the GOA circuit and are irrelevant to the internal circuit structure of the GOA circuit.
The GOA circuit of the disclosed embodiment belongs to NTFT type, and includes two core units of pull-up (PU) and pull-down (PD), a positive and negative scan unit (T1 and T2): during positive scanning, CN is high level, CNB is low level, STV _ N-1 is a driving signal from a previous GOA circuit, and STV _ N +1 is a driving signal from a next GOA circuit; in reverse sweep, CNB is high and CN is low. And resetting the unit (T10). The specific working process is as follows: taking the normal scan as an example, at stage one, STV _ N-1 is at high level, the PU node is at high level, and the PD is at low level under the action of T6, so as to realize the interlocking between PU and PD. In the second stage, CK is high level, at this time Goutn output is high level, in the third stage, Reset signal is high level, making PU stage change into low level, the pulse high level of CKB guarantees that PD node is in high level, this stage T5 guarantees that PU and PD are in interlocking state.
When CK1 is VGH (high level), and CK2 is VGL (low level), T11 is in an on state, and T12 is in an off state, where Goutn and Goutn +1 outputs are independent of each other, the output of Goutn +1 is provided by GOA _ n +1, and this timing is a mode one operation; when CK1 is VGL and CK2 is VGH, T11 is in off state, T12 is in on state, and GOA _ n +1 generates an initial signal of the next GATE GOA _ n +2 and a reset signal of the previous GATE GOA _ n, and since T11 is off, its output signal is not used as a driving signal of GATE in the row, and at this time, Goutn is connected to Goutn + 1, and the driving signal of GATE in the row is provided by Goutn, and this timing is the operation mode of mode two. In the second mode, the even-numbered row GOA is not used as the driving signal for the actual GATE, so the high-level width of the corresponding output control signal CKB can be reduced appropriately, and the high-level width of the output control signal CK of the odd-numbered row can be increased appropriately.
The GOA circuit shown in fig. 4 is used in fig. 5 for illustration only, and is not limited thereto, and any GOA circuit in the prior art may be substituted in fig. 5 by one skilled in the art.
The embodiment of the present disclosure further provides a method for controlling a GOA driving circuit, which is used to control the GOA driving circuit in the above embodiment, and the flow of the method is shown in fig. 7, including steps S701 to S702:
s701, detecting whether a working mode switching signal is received.
The working mode switched by the working mode switching signal may be switching between the first mode and the second mode in the embodiment, and the working mode switching signal may be implemented by a switching key arranged on a user interface, that is, a function switching key may be arranged in a predetermined interface, for example, when a user wants to switch from fingerprint identification to health monitoring, the function switching key may be triggered to implement switching from the first mode to the second mode.
S702, under the condition of receiving the working mode switching signal, sending a clock control signal according to the working mode to be switched, and starting a thin film transistor corresponding to the working mode according to the clock control signal so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
The embodiment of the disclosure changes on the existing GOA framework, but does not change the core framework and the working mode of the original GOA circuit, but two thin film transistors are added before the output end of every two lines of GOA, the two thin film transistors control the on state through the high and low levels of the control signal all the time, and then one line of photoelectric sensors can be controlled to work independently or two lines of photoelectric sensors can be controlled to work simultaneously, the GOA circuits with different functions can be compatible, the switching of different functions can be realized flexibly, the scheme does not change the existing process flow, the function multiplexing is realized on the premise of increasing less manufacturing cost, and the performance of the product is improved.
The embodiment of the present disclosure further provides a control device for a GOA driving circuit, configured to control the GOA driving circuit in the embodiment of the present disclosure, and a structural schematic diagram of the control device is shown in fig. 8, where the control device includes:
a detection module 10, configured to detect whether a working mode switching signal is received; and the switching module 20 is coupled to the detection module 10, and configured to send a clock control signal according to the to-be-switched working mode and turn on the thin film transistor corresponding to the working mode according to the clock control signal under the condition that the working mode switching signal is received, so as to control one row of the photosensors to work independently or control two rows of the photosensors to work simultaneously.
The embodiment of the present disclosure further provides an electronic device, which at least includes the GOA driving circuit and the control device of the GOA driving circuit in the foregoing embodiments of the present disclosure, and the specific structure is not described herein again.
Moreover, although exemplary embodiments have been described herein, the scope thereof includes any and all embodiments based on the disclosure with equivalent elements, modifications, omissions, combinations (e.g., of various embodiments across), adaptations or alterations. The elements of the claims are to be interpreted broadly based on the language employed in the claims and not limited to examples described in the present specification or during the prosecution of the application, which examples are to be construed as non-exclusive. It is intended, therefore, that the specification and examples be considered as exemplary only, with a true scope and spirit being indicated by the following claims and their full scope of equivalents.
The above description is intended to be illustrative and not restrictive. For example, the above-described examples (or one or more versions thereof) may be used in combination with each other. For example, other embodiments may be used by those of ordinary skill in the art upon reading the above description. In addition, in the foregoing detailed description, various features may be grouped together to streamline the disclosure. This should not be interpreted as an intention that a disclosed feature not claimed is essential to any claim. Rather, the subject matter of the present disclosure may lie in less than all features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the detailed description as examples or embodiments, with each claim standing on its own as a separate embodiment, and it is contemplated that these embodiments may be combined with each other in various combinations or permutations. The scope of the disclosure should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
While the present disclosure has been described in detail with reference to the embodiments, the present disclosure is not limited to the specific embodiments, and those skilled in the art can make various modifications and alterations based on the concept of the present disclosure, and the modifications and alterations should fall within the scope of the present disclosure as claimed.
Claims (10)
1. A GOA driving circuit, comprising:
the device comprises a plurality of GOA circuits in a cascade state, wherein one GOA circuit is used for controlling a row of photoelectric sensors;
and each group of thin film transistors comprises two thin film transistors, and each group of thin film transistors is arranged in front of the output end of the GOA circuit corresponding to every two rows of photoelectric sensors, and controls the two thin film transistors to be not started simultaneously through clock control signals so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
2. The GOA driver circuit of claim 1, wherein each thin film transistor corresponds to a clock signal control line.
3. The GOA driving circuit as claimed in claim 1, wherein the thin film transistor is an N-type thin film transistor.
4. A GOA driver circuit according to any of the claims 1 to 3, wherein each set of thin film transistors is arranged in front of the output of every two corresponding rows of GOA circuits, comprising:
two ends of the first thin film transistor are respectively connected with the first output end and the second output end, and the second thin film transistor is arranged between the second GOA circuit and the second output end;
the first output end is an output end corresponding to the first GOA circuit, the second output end is an output end corresponding to the second GOA circuit, and the line numbers of the photoelectric sensors controlled by the first GOA circuit and the second GOA circuit are adjacent.
5. The GOA driving circuit as claimed in claim 4, wherein the first GOA circuit corresponds to odd row line numbers and the second GOA circuit corresponds to even row line numbers.
6. The GOA driving circuit as claimed in claim 5, wherein a drain of the first thin film transistor is connected to the first output terminal, a source of the first thin film transistor is connected to the second output terminal, a drain of the second thin film transistor is connected to the second output terminal, and a source of the second thin film transistor is connected to the second GOA circuit.
7. A control method of a GOA driver circuit for controlling the GOA driver circuit of any one of claims 1 to 6, comprising:
detecting whether a working mode switching signal is received;
and under the condition of receiving a working mode switching signal, sending a clock control signal according to a working mode to be switched, and starting a thin film transistor corresponding to the working mode according to the clock control signal so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
8. A control apparatus for a GOA driving circuit, for controlling the GOA driving circuit of any one of claims 1 to 6, comprising:
the detection module is used for detecting whether a working mode switching signal is received or not;
and the switching module is used for sending a clock control signal according to the working mode to be switched under the condition of receiving the working mode switching signal, and starting the thin film transistor corresponding to the working mode according to the clock control signal so as to independently control one row of photoelectric sensors to work or control two rows of photoelectric sensors to work simultaneously.
9. An electronic device, characterized in that it comprises at least: a GOA driving circuit according to any one of claims 1 to 6.
10. The electronic device of claim 9, further comprising: control means for a GOA driver circuit as claimed in claim 8.
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| CN109740565A (en) * | 2019-01-16 | 2019-05-10 | 北京集创北方科技股份有限公司 | Signal pickup assembly, screen signal acquisition device and method |
| CN112071272A (en) * | 2020-09-14 | 2020-12-11 | 武汉华星光电半导体显示技术有限公司 | Light-emitting control circuit and display panel |
| CN112365857A (en) * | 2020-12-04 | 2021-02-12 | 深圳市华星光电半导体显示技术有限公司 | Drive circuit, display panel and display device |
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